A multi-channel high-voltage and high-current transistor array and a reliability test circuit thereof

Abstract

A kind of multi-channel high-voltage large current transistor array and its reliability test circuit belong to integrated circuit integration and testing technical field.Each column transistor circuit is composed of transistor array unit by composite transistor, freewheeling diode, base series resistance, current limiting resistance, pull-down resistance. Reliability test circuit includes single-chip microcomputer, single-chip microcomputer port indicator light, MOS drive circuit, transistor array device, transistor array device load system. Each interface of the single-chip microcomputer is connected with corresponding indicator light, corresponding MOS drive circuit unit, the output end of each unit of MOS drive circuit is connected with the base of corresponding array of transistor array device, the collector of corresponding array of transistor array device is connected with load system. It solves the problem that existing multi-channel transistor reliability test method cannot test signal interference between channels, thermal effect, potential failure risk under extreme working environment. It is widely used in transistor array product reliability test technical field.

Description

Technical Field

[0001] This utility model belongs to the field of integrated circuit integration and testing technology, and more specifically to the field of transistor array device integration and testing. In particular, it relates to a multi-channel high-voltage high-current transistor array and its reliability test circuit. Background Technology

[0002] With the rapid development of semiconductor technology, the increasing integration density of integrated circuits and the growing complexity and diversity of electronic product functions have placed extremely stringent demands on the performance and reliability of key components. Multi-channel high-voltage, high-current transistor arrays, as a core semiconductor device widely used in various electronic circuits, directly affect the stable operation and lifespan of the entire electronic system.

[0003] In the past development of semiconductors, the size of transistors has continued to shrink. Multichannel transistor arrays, for example, integrate multiple channels on a limited chip area, enabling more complex circuit functions. However, this technological breakthrough has also brought many challenges. On the one hand, with the increase in the number of channels and the reduction in transistor size, problems such as signal interference and thermal effects between channels become increasingly significant, seriously affecting their reliability. On the other hand, the performance stability of multichannel transistor arrays faces severe tests in extreme operating environments such as high temperature, high pressure, and strong radiation.

[0004] Traditional reliability testing methods and circuits are no longer sufficient to meet the demands of current semiconductor technology development. Previous simple electrical parameter tests cannot comprehensively and deeply detect potential failure modes of multi-channel transistor arrays under complex operating conditions, such as electromigration and hot carrier injection. Conventional aging test circuits have shortcomings in temperature uniformity, stress application accuracy, and simultaneous monitoring of multiple parameters, making it difficult to accurately simulate the complex operating conditions of multi-channel transistor arrays in real-world applications. Therefore, developing an advanced, efficient, and accurate multi-channel transistor reliability testing method and circuit has become an urgent need to drive continuous progress in semiconductor technology and improve the performance and reliability of electronic circuits.

[0005] In view of the above, this utility model is hereby proposed. Summary of the Invention

[0006] The technical problem to be solved by this utility model is to address the issue that existing multi-channel transistor reliability testing methods cannot test signal interference, thermal effects, and potential failure risks under extreme operating conditions between channels.

[0007] The multi-channel high-voltage, high-current transistor array, such as Figure 1 As shown. Its main contents are as follows: Each column of transistor circuits consists of a transistor array unit composed of a composite transistor, a freewheeling diode, a base series resistor, a current-limiting resistor, and a pull-down resistor; The composite transistor consists of transistor 1 and transistor 2; The base of transistor 1 is connected to one end of a base series resistor and one end of a current-limiting resistor, and the other end of the base series resistor is connected to the base of the transistor array unit; the emitter of transistor 1 is connected to the base of transistor 2, the other end of the current-limiting resistor, and one end of a pull-down resistor, and the other end of the pull-down resistor is connected to the emitter of transistor 2 and the emitter of the transistor array unit; the collector of transistor 1 is connected to the collector of transistor 2, the anode of the freewheeling diode, and the collector of the transistor array unit, and the cathode of the freewheeling diode is connected to the common terminal (COM terminal).

[0008] Each Linton transistor is connected in series with a base resistor, and an external current-limiting resistor and pull-down resistor are added. The base current is adjusted to control the collector IC current of the transistor, so as to achieve a large collector current output.

[0009] Each circuit features a common-cathode freewheeling diode (fast recovery clamping diode) for switching inductive loads, protecting the circuit from reverse electromotive force and providing a wide operating range.

[0010] This product uses a metal-ceramic patch hermetic encapsulation to improve heat dissipation, anti-interference ability, and resistance to harsh environments.

[0011] The 2.5D packaging process enables high cohesion and low coupling in transistor array devices, improving heat dissipation performance and anti-interference capability.

[0012] The test circuit for the reliability testing method of the multi-channel high-voltage high-current transistor array, such as... Figure 2 As shown. Includes: Microcontroller, microcontroller port LED indicator, MOS drive circuit, transistor array device, transistor array device load system.

[0013] Each interface of the microcontroller is connected to a corresponding LED indicator and a corresponding MOS drive circuit unit. The output terminal of each unit of the MOS drive circuit is connected to the base of the corresponding array of the transistor array device. The collector of the corresponding array of the transistor array device is connected to the load system of the transistor array device.

[0014] The transistor array device load system consists of a relay, a motor, an optocoupler, and an LED display device. The output of the transistor array device controls the relay, the relay controls the motor, and the motor controls the LED display device via the optocoupler. Beneficial effects

[0015] The transistor array employs a metal-ceramic surface-mount hermetic package, featuring small size, light weight, wide application, high integration, and ease of use compared to similar products. It can directly drive loads and has strong load capacity, primarily functioning as a voltage-controlled high-voltage driver in various electronic circuits. It can be widely used in the communications field, such as base stations, satellite communications, as well as motherboard circuits, display drivers, motor drives, relay control, and automated production lines, with a promising market prospect.

[0016] The reliability testing method and circuit of the described multi-channel high-voltage, high-current transistor array are convenient to operate and provide strong timely feedback. The reliability testing system can detect product quality in real time and also facilitates aging tests on other product models, greatly improving R&D efficiency. It features a highly stable architecture, wide dynamic range testing, and a low-noise interference environment. It can be widely applied in the field of transistor array product reliability testing technology. Attached Figure Description

[0017] Figure 1 Schematic diagram of a seven-channel high-voltage, high-current transistor array circuit. Figure 2 Schematic diagram of a seven-channel high-voltage high-current transistor array reliability test circuit. Figure 3 Schematic diagram of a seven-channel high-voltage high-current transistor array reliability test circuit Figure 4 Schematic diagram of a seven-channel high-voltage, high-current transistor array NMOS driving circuit. Figure 5 Schematic diagram of a high-temperature power reliability verification system for a seven-channel high-voltage high-current transistor array. Detailed Implementation

[0018] like Figure 1-5 As shown, taking a seven-channel high-voltage high-current transistor array as an example, the specific implementation of the multi-channel high-voltage high-current transistor array and its reliability test circuit is as follows: I. The aforementioned multi-channel high-voltage high-current transistor array It consists of seven NPN composite transistors, seven freewheeling diodes, external current-limiting resistors, and pull-down resistors. Each Darlington pair is connected in series with a base resistor, employing high collector current output. It has the following technical features: (1) The transistor array product has an external dimension of 10.2mm × 6.4mm and an internal cavity area of ​​0.19cm². 2 .

[0019] (2) High integration: It integrates 7 channels internally, with 7 common cathode freewheeling diodes for switching inductive loads.

[0020] (3) Each Darlington input has a base resistor in series; (4) The packaging shell of the current transistor array is a metal-ceramic surface-mount hermetic packaging shell. It adopts metal-ceramic surface-mount hermetic packaging and adopts 2.5D advanced packaging technology, with high cohesion, low coupling, and high functional stability.

[0021] II. Test methods and test circuits for the multi-channel high-voltage high-current transistor array 1. Normal temperature function test The experimental circuit consists of seven transistor array modules, a microcontroller application system, a MOSFET driver module, and a load system circuit. The microcontroller is programmed to output high and low levels via I / O ports, and the MOSFETs act as switch drivers to drive the transistor array.

[0022] (1) Microcontroller circuit analysis: The microcontroller is an STM32 series microcontroller. The microcontroller circuit is designed with four modes: ① P34 port is used as the inspection mode; ② P35 port is used as the full-light mode of LEDs; ③ P36 port is used as the intermittent-light mode of LEDs: the frequency bands can be divided into 0.5HZ, 10HZ, 1KHZ, and 20KHZ; ④ P37 port is used as the running light mode.

[0023] (2) MOS transistor drive: An NMOS transistor is used, with a 10-ohm damping resistor connected in series at the gate, a 20K bleeder resistor connected in parallel between the gate and the source, and a 1k pull-up resistor at the drain connected to the 5V power supply. The NMOS drain output is directly connected to the input drive terminal of the transistor array. The high and low signals output by the microcontroller are converted to low-high signals through the NMOS, i.e., inverted logic output.

[0024] (3) The seven-channel high-voltage high-current transistor array circuit consists of seven groups of transistors, seven freewheeling diodes, external current-limiting resistors, and pull-down resistors. A motor is connected as a load to the collector output of the transistors. If the electrodes rotate, the circuit is working normally; if the motor does not rotate, the circuit is not working normally. When the microcontroller is powered on, pressing a button such as P34 will illuminate the LED, indicating that the circuit is in inspection mode. This indicates that the front-end drive module is working normally. Then, observe whether the seven motors rotate sequentially. If the seven motors rotate sequentially, it indicates that the circuit is outputting normally.

[0025] 2. High-Temperature Power Reliability Test Connecting a seven-channel transistor array in parallel provides a larger current, suitable for relay drivers, lamp drivers, LED drivers, optocoupler drivers, etc. The input ports of the transistor array connect to a MOS driver module, primarily used for switching. The front-end input of the MOS driver module is connected to a microcontroller program. The microcontroller's I / O ports output high and low levels to control the MOS transistors' on / off states, thereby driving the transistor array module to control the load's operation and shutdown.

[0026] By applying high temperature and high power stress, the aging of components is accelerated, eliminating products that fail prematurely due to manufacturing defects (such as material defects and poor soldering). This verifies the product's performance stability under long-term high temperature and high load conditions, ensuring compliance with lifespan requirements. Key product parameters such as voltage, leakage current, and temperature are monitored in real time.

[0027] For batch product testing, the current output capability of the signal source is amplified. The current output terminal of the signal source is connected to the input terminal of a push-pull circuit. The first stage of the push-pull circuit uses an NMOS switch to control the signal source's on / off state. The second stage is a push-pull current amplifier circuit, where the upper transistor is a PMOS and the lower transistor is an NMOS. The PMOS and NMOS in the push-pull output circuit work alternately, with only one transistor conducting at a time. The on-resistance of the transistors is very small, resulting in a very small RC constant and a fast switching speed. This improves both the circuit's load capacity and switching speed.

[0028] Finally, it should be noted that the above embodiments are merely examples for clear illustration. This utility model includes, but is not limited to, the above embodiments, and it is neither necessary nor possible to exhaustively describe all implementation methods. Those skilled in the art can make other variations or modifications based on the above description. All implementation schemes that meet the requirements of this utility model are within the protection scope of this utility model.

Claims

1. A multi-channel high-voltage high-current transistor array, characterized in that: Each column of transistor circuits consists of a transistor array unit composed of a composite transistor, a freewheeling diode, a base series resistor, a current-limiting resistor, and a pull-down resistor; The composite transistor consists of transistor 1 and transistor 2; The base of transistor 1 is connected to one end of a base series resistor and one end of a current-limiting resistor, and the other end of the base series resistor is connected to the base of the transistor array unit; the emitter of transistor 1 is connected to the base of transistor 2, the other end of the current-limiting resistor, and one end of a pull-down resistor, and the other end of the pull-down resistor is connected to the emitter of transistor 2 and the emitter of the transistor array unit. The collector of transistor 1 is connected to the collector of transistor 2, the anode of the freewheeling diode, and the collector of the transistor array unit. The cathode of the freewheeling diode is connected to the common terminal (COM terminal).

2. The multi-channel high-voltage high-current transistor array as described in claim 1, characterized in that: The current transistor array is packaged in a metal-ceramic patch hermetic package.

3. The multi-channel high-voltage high-current transistor array as described in claim 2, characterized in that: The outer dimensions of the encapsulation shell are 10.2mm × 6.4mm, and the inner cavity area is 0.19cm². 2 .

4. A reliability test circuit for a multi-channel high-voltage high-current transistor array, characterized in that, include: Microcontroller, microcontroller port LED indicator, MOS driver circuit, transistor array device, transistor array device load system; Each interface of the microcontroller is connected to the corresponding LED indicator and the corresponding MOS drive circuit unit. The output terminal of each unit of the MOS drive circuit is connected to the base of the corresponding array of the transistor array device. The collector of the corresponding array of the transistor array device is connected to the load system of the transistor array device. The transistor array device load system consists of relays, motors, optocouplers, and LED display devices; The output of the transistor array device is connected to the input of the control relay, the output of the relay is connected to the input of the motor, the output of the motor is connected to the input of the optocoupler, and the output of the optocoupler is connected to the LED display device.

5. The multi-channel high-voltage high-current transistor array reliability test circuit as described in claim 4, characterized in that: The MOS driving circuit is composed of a multi-channel MOS driving circuit array unit; The MOS drive circuit array unit consists of MOS transistors, gate damping resistors, gate-source discharge resistors, and drain pull-up resistors; The MOS transistor is an NMOS transistor with a damping resistor connected in series at the gate, a discharge resistor connected in parallel between the gate and the source, and a drain pull-up resistor connected to a 5V power supply. The drain output terminal of the NMOS transistor is connected to the input terminal of the transistor array.

6. The multi-channel high-voltage high-current transistor array reliability test circuit as described in claim 4, characterized in that: Connect multiple transistor arrays in parallel.

7. The multi-channel high-voltage high-current transistor array reliability test circuit as described in claim 4, characterized in that: The current output terminal of the signal source is connected to the input terminal of the push-pull circuit. The first stage of the push-pull circuit is an NMOS switch, and the second stage is a push-pull current amplifier circuit.

8. The multi-channel high-voltage high-current transistor array reliability test circuit as described in claim 7, characterized in that: The push-pull current amplifier circuit has a PMOS upper transistor and an NMOS lower transistor.

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