Display device and electronic device including the same

Abstract

A display device and an electronic device including the same are provided. The display device includes a substrate, a light emitting element layer on the substrate and including a first light emitting area, a second light emitting area, and a third light emitting area, a thin film encapsulation layer on the light emitting element layer, and a wavelength conversion layer on the thin film encapsulation layer. The wavelength conversion layer includes a bank on the thin film encapsulation layer and exposing the first light emitting area, the second light emitting area, and the third light emitting area, a reflective layer on a side surface of the bank, a light transmission pattern, a first wavelength conversion pattern, and a second wavelength conversion pattern, the light transmission pattern overlapping the first light emitting area, the first wavelength conversion pattern overlapping the second light emitting area, and the second wavelength conversion pattern overlapping the third light emitting area, and a cover layer on the bank, the light transmission pattern, the first wavelength conversion pattern, and the second wavelength conversion pattern. By including the reflective layer on the side surface of the bank, color mixing between adjacent light emitting areas can be effectively prevented.

Description

Technical Field

[0001] The disclosed embodiments relate to a display device and an electronic device including the display device. Background Technology

[0002] With the advancement of the information society, display devices for displaying images are widely used in various fields. For example, display devices are used in various electronic devices such as smartphones, digital cameras, laptops, navigation devices, and smart TVs.

[0003] Display devices can be flat panel displays such as liquid crystal displays, field emission displays, and light-emitting displays. Examples of light-emitting displays include organic light-emitting displays composed of organic light-emitting elements, inorganic light-emitting displays composed of inorganic light-emitting elements such as inorganic semiconductors, and micro light-emitting displays composed of micro light-emitting elements.

[0004] An organic light-emitting element may include two opposing electrodes and a light-emitting layer placed between them. The light-emitting layer receives electrons and holes from the two electrodes, and the electrons and holes recombine to generate excitons, which then transition from an excited state to a ground state to emit light.

[0005] Organic light-emitting display devices, which include organic light-emitting elements, are attracting attention as the next generation of display devices because they can meet high display quality requirements such as wide viewing angle, high brightness and contrast, and fast response speed, and can be made with low power consumption, light weight and thinness by not including a separate light source such as a backlight unit. Utility Model Content

[0006] The purpose of this invention is to provide a display device that can effectively prevent color mixing and improve efficiency by increasing the particle concentration of the wavelength conversion layer.

[0007] According to one or more disclosed embodiments, a display device includes: a substrate; a light-emitting element layer disposed on the substrate, wherein the light-emitting element layer includes a first light-emitting region, a second light-emitting region, and a third light-emitting region; a thin-film encapsulation layer disposed on the light-emitting element layer; and a wavelength conversion layer disposed on the thin-film encapsulation layer, wherein the wavelength conversion layer includes: a barrier disposed on the thin-film encapsulation layer, wherein the barrier exposes the first light-emitting region, the second light-emitting region, and the third light-emitting region; a reflective layer disposed on a side surface of the barrier; a light-transmitting pattern, a first wavelength conversion pattern, and a second wavelength conversion pattern, wherein the light-transmitting pattern is superimposed on the first light-emitting region, the first wavelength conversion pattern is superimposed on the second light-emitting region, and the second wavelength conversion pattern is superimposed on the third light-emitting region; and a capping layer disposed on the barrier, the light-transmitting pattern, the first wavelength conversion pattern, and the second wavelength conversion pattern.

[0008] In one embodiment, the embankment may be in the shape of an inverted cone.

[0009] In an embodiment, the reflective layer may contact the side surface of the embankment and the side surface of each of the light-transmitting pattern, the first wavelength conversion pattern, and the second wavelength conversion pattern, and the first wavelength conversion pattern and the second wavelength conversion pattern may contact the reflective layer but not the embankment.

[0010] In an embodiment, the thickness of the light-transmitting pattern can be greater than the thickness of the dam, and the thickness of each of the first wavelength conversion pattern and the second wavelength conversion pattern can be less than the thickness of the dam.

[0011] In an embodiment, the light-transmitting pattern may include a first matrix resin and a first scatterer, the first wavelength conversion pattern may include a second matrix resin, a second scatterer and a first wavelength shifter, and the second wavelength conversion pattern may include a third matrix resin, a third scatterer and a second wavelength shifter.

[0012] In one embodiment, each of the first wavelength shifter and the second wavelength shifter can change the light emitted from the light-emitting element layer into light of a different color.

[0013] In one embodiment, a cover layer is disposed between the light-transmitting pattern and the thin-film encapsulation layer. The cover layer can be divided into separate and spaced portions on the embankment, and the light-transmitting pattern can be directly disposed on the cover layer without directly contacting the embankment.

[0014] According to one or more disclosed embodiments, a display device includes: a substrate; a light-emitting element layer disposed on the substrate, wherein the light-emitting element layer includes a first light-emitting region, a second light-emitting region, and a third light-emitting region; a thin-film encapsulation layer disposed on the light-emitting element layer; and a wavelength conversion layer disposed on the thin-film encapsulation layer, wherein the wavelength conversion layer includes: a dam disposed on the thin-film encapsulation layer and superimposed on the first light-emitting region, wherein the dam exposes the second light-emitting region and the third light-emitting region; a reflective layer disposed on a side surface of the dam; a first wavelength conversion pattern and a second wavelength conversion pattern, wherein the first wavelength conversion pattern is superimposed on the second light-emitting region, and the second wavelength conversion pattern is superimposed on the third light-emitting region; and a capping layer disposed on the dam, the first wavelength conversion pattern, and the second wavelength conversion pattern, wherein the dam includes a first matrix resin and a first diffuser.

[0015] In one embodiment, the reflective layer may contact the side surface of the embankment and the side surface of each of the first wavelength conversion pattern and the second wavelength conversion pattern.

[0016] In an embodiment, the first wavelength conversion pattern and the second wavelength conversion pattern may contact the reflective layer but not the embankment.

[0017] According to one or more disclosed embodiments, an electronic device includes: a display device for providing an image; and a processor for providing image data signals to the display device, wherein the display device includes: a substrate; a light-emitting element layer disposed on the substrate, wherein the light-emitting element layer includes a first light-emitting region, a second light-emitting region, and a third light-emitting region; a thin-film encapsulation layer disposed on the light-emitting element layer; and a wavelength conversion layer disposed on the thin-film encapsulation layer, wherein the wavelength conversion layer includes: a barrier disposed on the thin-film encapsulation layer, wherein the barrier exposes the first light-emitting region, the second light-emitting region, and the third light-emitting region; a reflective layer disposed on a side surface of the barrier; a light-transmitting pattern, a first wavelength conversion pattern, and a second wavelength conversion pattern, wherein the light-transmitting pattern is superimposed on the first light-emitting region, the first wavelength conversion pattern is superimposed on the second light-emitting region, and the second wavelength conversion pattern is superimposed on the third light-emitting region; and a capping layer disposed on the barrier, the light-transmitting pattern, the first wavelength conversion pattern, and the second wavelength conversion pattern.

[0018] In the display device according to the embodiment, color mixing between adjacent light-emitting areas can be effectively prevented by including a reflective layer on the side surface of the dam. In the embodiment, a light-transmitting pattern can be formed after forming a capping layer on the first wavelength conversion pattern and the second wavelength conversion pattern to prevent the first wavelength conversion pattern and the second wavelength conversion pattern from being damaged during the process. In the embodiment, a dam comprising a first matrix resin and a scatterer can be formed, such that the dam in the first light-emitting area can be used as a light-transmitting pattern and the structure can be simplified.

[0019] However, the effects of the disclosed embodiments are not limited to those of the examples above, and various other effects are included herein. Attached Figure Description

[0020] These and / or other features of the disclosed embodiments will become apparent and more readily understood through the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0021] Figure 1 This is a plan view of the display device according to an embodiment;

[0022] Figure 2 This is a schematic plan view illustrating lines included in a display device according to an embodiment;

[0023] Figure 3 This is an equivalent circuit diagram of a sub-pixel according to an embodiment;

[0024] Figure 4 This is a schematic cross-sectional view of a display device according to an embodiment;

[0025] Figure 5 This is a schematic cross-sectional view of a display device according to an embodiment;

[0026] Figures 6 to 10This is a cross-sectional view illustrating a method of manufacturing a display device according to an embodiment;

[0027] Figure 11 This is a cross-sectional view of a display device according to another embodiment;

[0028] Figures 12 to 16 This is a cross-sectional view illustrating a method of manufacturing a display device according to another embodiment;

[0029] Figure 17 This is a cross-sectional view of a display device according to yet another embodiment;

[0030] Figures 18 to 21 This is a cross-sectional view illustrating a method of manufacturing a display device according to yet another embodiment;

[0031] Figure 22 This is a block diagram of an electronic device according to a disclosed embodiment; and

[0032] Figure 23 This is a schematic diagram of an electronic device according to various disclosed embodiments. Detailed Implementation

[0033] The utility model will now be described more fully below with reference to the accompanying drawings, in which various embodiments are illustrated. However, the utility model may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the utility model to those skilled in the art.

[0034] It will be understood that when an element is referred to as "on" another element, the element may be directly on the other element, or an intervening element may be present therein. In contrast, when an element is referred to as "directly on" another element, no intervening element is present. Throughout the specification, the same reference numerals denote the same components. The shapes, dimensions, ratios, angles, quantities, etc., disclosed in the drawings for the purpose of explaining embodiments are exemplary, and the invention is not limited to the cases shown.

[0035] It will be understood that although the terms “first,” “second,” “third,” etc., may be used herein to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, or part from another. Therefore, without departing from the teachings herein, “first element,” “first component,” “first region,” “first layer,” or “first part” discussed below may be referred to as a second element, second component, second region, second layer, or second part.

[0036] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. Unless the context clearly indicates otherwise, as used herein, “a,” “an,” “the,” and “at least one of…” do not indicate a limitation in quantity and are intended to include both singular and plural forms. Thus, an “a” element mentioned in a claim and subsequently referenced as “the” element includes one element and multiple elements. For example, unless the context clearly indicates otherwise, “element” has the same meaning as “at least one of…”. “At least one of…” is not to be construed as limited to “a” or “an.” “Or” means “and / or.” As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. It will also be understood that when the terms “comprising” and / or “including” and variations thereof are used in this specification, it indicates the presence of the stated features, areas, integrals, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, areas, integrals, steps, operations, elements, components and / or groups thereof.

[0037] Furthermore, relative terms such as “below” or “bottom” and “above” or “top” may be used here to describe the relationship between one element and another as shown in the accompanying drawings. It will be understood that, in addition to the orientations depicted in the drawings, the relative terms are also intended to cover different orientations of the device. For example, if the device in one of the drawings is flipped, an element described as being “below” the other element will subsequently be oriented to be “above” the other element. Thus, the term “below” can cover both “below” and “above” orientations depending on the specific orientation of the drawing. Similarly, if the device in one of the drawings is flipped, an element described as being “below” or “under” the other element will subsequently be oriented to be “above” the other element. Thus, the terms “below” or “under” can cover both “above” and “below” orientations.

[0038] Each of the features in the various embodiments of the utility model can be combined in part or in whole, or combined with each other, and various technical connections and operations are possible. Each embodiment can be implemented independently of each other, or can be implemented together in a related relationship.

[0039] As used herein, “about” or “approximately” includes the stated value and indicates an acceptable deviation of the particular value as determined by a person skilled in the art, taking into account the measurement in question and the error associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, “about” may mean within one or more standard deviations or within ±30%, ±20%, ±10%, or ±5% of the stated value.

[0040] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It will also be understood that, unless expressly defined herein, terms (such as those defined in common dictionaries) shall be interpreted as having a meaning consistent with their meaning in the context of the relevant field and in this disclosure, and shall not be interpreted in an idealized or overly formalized sense.

[0041] Embodiments are described herein with reference to sectional views, which are schematic illustrations of idealized examples. Thus, variations in the shapes illustrated will be expected, for example, due to manufacturing techniques and / or tolerances. Therefore, the embodiments described herein should not be construed as limited to the specific shapes of the areas shown herein, but will include, for example, shape deviations due to manufacturing processes. For example, areas shown or described as flat may generally have rough and / or non-linear characteristics. Furthermore, sharp corners shown may be rounded. Therefore, the areas shown in the figures are schematic in nature, and their shapes are not intended to show the precise shapes of the areas, nor are they intended to limit the scope of the presented claims.

[0042] In the following description, embodiments will be illustrated with reference to the accompanying drawings.

[0043] Figure 1 This is a plan view of a display device according to an embodiment.

[0044] Reference Figure 1 The display device 10 according to the embodiment can be applied to smartphones, mobile phones, tablet PCs, personal digital assistants (PDAs), portable multimedia players (PMPs), televisions, game consoles, watch-type electronic devices, head-mounted displays, PC monitors, laptops, car navigation systems, car dashboards, digital cameras, camcorders, billboards, electronic display panels, medical devices, examination devices, various home appliances such as refrigerators and washing machines, or Internet of Things (IoT) devices (or included in smartphones, mobile phones, tablet PCs, personal digital assistants (PDAs), portable multimedia players (PMPs), televisions, game consoles, watch-type electronic devices, head-mounted displays, PC monitors, laptops, car navigation systems, car dashboards, digital cameras, camcorders, billboards, electronic display panels, medical devices, examination devices, various home appliances such as refrigerators and washing machines, or Internet of Things (IoT) devices). In the specification, an embodiment of the display device 10 as a television will be described as an example, and the television may have a high resolution or ultra-high resolution such as HD, UHD, 4K, or 8K.

[0045] Furthermore, the display device 10 according to the embodiments can be classified according to different display methods. For example, display devices can be classified as organic light-emitting display devices (OLED), inorganic electroluminescent (EL) display devices, quantum dot light-emitting display devices (QED), micro light-emitting diode display devices, nano light-emitting diode display devices, plasma display panels (PDP), field emission display (FED) devices, cathode ray tube (CRT) display devices, liquid crystal display (LCD) devices, or electrophoretic display (EPD) devices. In the following, embodiments of display device 10 that are organic light-emitting display devices and inorganic EL display devices will be described as examples. Unless otherwise specified, embodiments of display devices that are organic light-emitting display devices and inorganic EL display devices will be simply referred to as display devices. However, the embodiments are not limited to organic light-emitting display devices or inorganic EL display devices, and other display devices listed above or known in the art can also be applied within the scope of the shared spirit of the art.

[0046] The display device 10 according to the embodiment may have a square shape, such as a rectangle, in a plan view. In the embodiment, when the display device 10 is a television, its long side is located in the horizontal direction. However, the disclosure is not limited to this, and the long side may also be located in the vertical direction, or the display device 10 may be rotatably mounted such that the long side may be variably located in the horizontal or vertical direction.

[0047] Display device 10 may include a display area DPA and a non-display area NDA. The display area DPA may be an effective area in which an image is displayed. The display area DPA may have a rectangular shape in a plan view similar to the overall shape of display device 10, but the disclosure is not limited thereto.

[0048] The display area DPA may include a plurality of pixels PX. The pixels PX may be arranged in a matrix. Each of the pixels PX may be rectangular or square in a planar view. However, the disclosure is not limited thereto, and each of the pixels PX may also have a rhombus shape, each side of which is inclined relative to one side of the display device 10. The pixels PX may include pixels PX of various colors. In embodiments, for example, the pixels PX may include, but are not limited to, a first color (red) pixel PX, a second color (green) pixel PX, and a third color (blue) pixel PX. These color pixels PX may be arranged in stripes or pentiles. ® The types are arranged alternately.

[0049] The non-display area NDA may be located around the display area DPA. The non-display area NDA may completely or partially surround the display area DPA. The display area DPA may be rectangular, and the non-display area NDA may be adjacent to the four sides of the display area DPA. The non-display area NDA may form or correspond to the bezel of the display device 10.

[0050] The driving circuit or driving element for driving the display area DPA can be located in the non-display area NDA. In an embodiment, a pad (or solder pad) unit can be disposed on the display device 10 at the first long side of the display device 10 ( Figure 1 The first non-display area NDA1, located adjacent to the lower side of the middle, and the second long side ( Figure 1 The display substrate is located adjacent to the first short side of the display device 10 in the second non-display area NDA2, and the external device EXD can be mounted on the pad electrode of the pad unit. Examples of the external device EXD may include a connection film, a printed circuit board, a driver chip DIC, a connector, and a wiring connection film. The scan driver SDR formed directly on the display substrate of the display device 10 may be located in the third non-display area NDA3, which is adjacent to the first short side of the display device 10. Figure 1 The left side of the display device 10 is adjacent to the right side of the display device 10. However, the disclosure is not limited to this, and the scan driver SDR may also be located in the fourth non-display area NDA4, which is adjacent to the second short side of the display device 10. Figure 1 (Right side of the middle) adjacent positioning.

[0051] Figure 2 This is a schematic plan view showing lines included in a display device according to an embodiment.

[0052] Reference Figure 2 Embodiments of the display device 10 may include multiple lines. These lines may include a scan line SCL, a sensing line SSL, a data line DTL, an initialization voltage line VIL, a first voltage line VDL, and a second voltage line VSL. Furthermore, although not shown in the figures, other lines may also be provided in the display device 10.

[0053] Scan line SCL and sensing line SSL may extend on the first direction DR1. Scan line SCL and sensing line SSL may be connected to scan driver SDR. Scan driver SDR may include driving circuitry. Scan driver SDR may be located on one side of display area DPA on the first direction DR1, but the disclosure is not limited thereto. Scan driver SDR may be connected to signal connection line CWL, and at least one end of signal connection line CWL may form pad WPD_CW in pad area PDA of non-display area NDA, thus allowing connection to external device EXD.

[0054] As used herein, the term "connection" can mean that any component and another component are connected to each other not only through physical contact but also through other components. Furthermore, it can be understood that any component and another component are connected to each other as a single, integral component. Moreover, in addition to connections through direct contact, the connection between any component and another component can be interpreted as also including electrical connections through other components.

[0055] Data lines DTL and initialization voltage lines VIL can extend in a second direction DR2 that intersects the first direction DR1. Each of the initialization voltage lines VIL may include a portion extending in the second direction DR2, and may also include a portion branching from the aforementioned portion in the first direction DR1. Each of the first voltage lines VDL and the second voltage lines VSL may also include a portion extending in the second direction DR2 and a portion connected to the aforementioned portion and extending in the first direction DR1. The first voltage lines VDL and the second voltage lines VSL may have a mesh structure, but the disclosure is not limited thereto. Although not shown in the figures, each pixel PX of the display device 10 may be connected to at least one data line DTL, an initialization voltage line VIL, a first voltage line VDL, and a second voltage line VSL. In the disclosure, the third direction DR3 may be a direction perpendicular to the plane defined by the first direction DR1 and the second direction DR2, and the third direction DR3 may be the display device 10 or its substrate SUB ( Figure 4 and Figure 5 The thickness direction (as shown in the figure).

[0056] The data line DTL, initialization voltage line VIL, first voltage line VDL, and second voltage line VSL can be electrically connected to one or more wiring pads WPD. Each wiring pad WPD can be located in a pad region PDA. In an embodiment, the wiring pad WPD_DT of the data line DTL (hereinafter referred to as the "data pad") can be located in a pad region PDA on one side of the display area DPA in the second direction DR2, and the wiring pad WPD_Vint of the initialization voltage line VIL (hereinafter referred to as the "initialization voltage pad"), the wiring pad WPD_VDD of the first voltage line VDL (hereinafter referred to as the "first power pad"), and the wiring pad WPD_VSS of the second voltage line VSL (hereinafter referred to as the "second power pad") can be located in a pad region PDA located on the other side of the display area DPA in the second direction DR2. In another embodiment, the data pad WPD_DT, the initialization voltage pad WPD_Vint, the first power pad WPD_VDD, and the second power pad WPD_VSS can all be located in the same area, for example, in the non-display area NDA located above the display area DPA. The external device EXD can be mounted on the wiring pad WPD. The external device EXD can be mounted on the wiring pad WPD via anisotropic conductive film or ultrasonic bonding, etc.

[0057] Each pixel PX or sub-pixel SPX of the display device 10 (see...) Figure 3 The display device 10 includes pixel driving circuitry. The lines described above can transmit driving signals to each pixel driving circuitry while passing through or around each pixel PX. Pixel driving circuitry can include transistors and capacitors. The number of transistors and capacitors in each pixel driving circuitry can vary. According to an embodiment, the pixel driving circuitry for each sub-pixel SPX of the display device 10 can have a 3T1C (three transistors-one capacitor) structure comprising three transistors and one capacitor. Although the pixel driving circuitry using the 3T1C structure is described below as an example, the disclosure is not limited thereto, and various other modified pixel structures, such as 2T1C (two transistors-one capacitor) structures, 7T1C (seven transistors-one capacitor) structures, and 6T1C (six transistors-one capacitor) structures, are also applicable.

[0058] Figure 3 This is an equivalent circuit diagram of a sub-pixel according to an embodiment.

[0059] Reference Figure 3 In addition to the light-emitting element ED, each sub-pixel SPX of the display device 10 according to the embodiment also includes three transistors DTR, STR1 and STR2 and a storage capacitor CST.

[0060] An LED emits light corresponding to the current supplied through a driving transistor DTR. LEDs can be implemented as inorganic LEDs, organic LEDs, micro LEDs, or nano LEDs.

[0061] The first electrode (i.e., the anode electrode) of the light-emitting element ED can be connected to the source electrode of the driving transistor DTR, and its second electrode (i.e., the cathode electrode) can be connected to the second power line ELVSL. A low potential voltage (second power supply voltage) that is lower than the high potential voltage (first power supply voltage) of the first power line ELVDL is supplied to the second power line ELVSL.

[0062] The driving transistor DTR regulates the current flowing from the first power line ELVDL, supplied with a first power supply voltage, to the light-emitting element ED based on the voltage difference between the gate electrode and the source electrode. The driving transistor DTR may have a gate electrode connected to the first electrode of the first transistor STR1, a source electrode connected to the first electrode of the light-emitting element ED, and a drain electrode connected to the first power line ELVDL supplied with the first power supply voltage.

[0063] The first transistor STR1 is turned on by the scan signal of the scan line SCL to connect the data line DTL to the gate electrode of the driving transistor DTR. The first transistor STR1 may have a gate electrode connected to the scan line SCL, a first electrode connected to the gate electrode of the driving transistor DTR, and a second electrode connected to the data line DTL.

[0064] The second transistor STR2 is turned on by the sensing signal of the sensing line SSL to connect the initialization voltage line VIL to the source electrode of the driving transistor DTR. The second transistor STR2 may have a gate electrode connected to the sensing line SSL, a first electrode connected to the initialization voltage line VIL, and a second electrode connected to the source electrode of the driving transistor DTR.

[0065] In an embodiment, the first electrode of each of the first transistor STR1 and the second transistor STR2 may be a source electrode, and its second electrode may be a drain electrode. However, the disclosure is not limited thereto, and the opposite may also be true.

[0066] A storage capacitor CST is formed between the gate and source electrodes of the driving transistor DTR. The storage capacitor CST stores the difference between the gate voltage and the source voltage of the driving transistor DTR.

[0067] The driving transistor DTR, as well as the first transistor STR1 and the second transistor STR2, can be formed as thin-film transistors. Furthermore, although... Figure 3The illustration shows an embodiment where the driving transistor DTR, the first transistor STR1, and the second transistor STR2 are N-type metal-oxide-semiconductor field-effect transistors (MOSFETs), but the disclosure is not limited thereto. In another embodiment, the driving transistor DTR, the first transistor STR1, and the second transistor STR2 may also be formed as P-type MOSFETs, or some of the driving transistor DTR, the first transistor STR1, and the second transistor STR2 may be formed as N-type MOSFETs, and others may be formed as P-type MOSFETs.

[0068] Figure 4 This is a schematic cross-sectional view of a display device according to an embodiment.

[0069] Reference Figure 4 The display device 10 according to the embodiment may include a substrate SUB, a light-emitting element layer EML, a thin film encapsulation layer TFEL, a wavelength conversion layer WCL, a filler layer LRF, a color filter layer CFL, and a substrate TSUB.

[0070] The substrate SUB can be an insulating substrate. The substrate SUB can include a transparent material. In embodiments, for example, the substrate SUB can include a transparent insulating material such as glass or quartz. The substrate SUB can be a rigid substrate. However, the disclosure is not limited thereto, and the substrate SUB can also include a plastic such as polyimide, or can have flexible properties that allow it to be bent, folded, or rolled up.

[0071] The light-emitting element layer (EML) can be located on the substrate (SUB). The EML can include multiple switching elements and multiple light-emitting elements (EDs) located in each sub-pixel (SPX). The switching elements can drive the EDs, enabling them to emit light.

[0072] The thin-film encapsulation layer TFEL can be located on the light-emitting element layer EML. The thin-film encapsulation layer TFEL may include multiple inorganic films and an organic film located between the multiple inorganic films to protect the light-emitting element layer EML from external moisture and oxygen.

[0073] The wavelength conversion layer (WCL) can be located on the thin-film encapsulation layer (TFEL). The WCL can convert the wavelength of light emitted from the light-emitting element layer (EML) to output red, green, and blue light.

[0074] The filler layer LRF can be located on the wavelength conversion layer WCL. The filler layer LRF can improve optical efficiency by causing total internal reflection of light emitted from the wavelength conversion layer WCL at the interface with the wavelength conversion layer WCL. According to an embodiment described later, the filler layer LRF may comprise a low-refractive-index material.

[0075] The color filter layer (CFL) can be located on the filler layer (LRF). The color filter layer (CFL) can filter light incident from the outside to reduce the reflection of external light and can improve the color characteristics of light emitted through the wavelength conversion layer (WCL).

[0076] The substrate TSUB can be located on the color filter layer CFL. The substrate TSUB can encapsulate the light-emitting element layer EML together with the substrate SUB. The substrate TSUB can include a transparent material. In embodiments, for example, the substrate TSUB can include a transparent insulating material such as glass or quartz.

[0077] Figure 5 This is a schematic cross-sectional view of a display device according to an embodiment.

[0078] Reference Figure 5 The display device 10 according to the embodiment may include a substrate SUB, a light-emitting element layer EML, a thin film encapsulation layer TFEL, a wavelength conversion layer WCL, a filler layer LRF, a color filter layer CFL, and a substrate TSUB.

[0079] Multiple light-emitting regions LA1 to LA3 and non-light-emitting regions NLA can be defined on the substrate SUB. The light-emitting regions LA1 to LA3 can be areas where light generated by light-emitting elements ED1 to ED3 is emitted to the outside, and the non-light-emitting regions NLA can be areas where light is not emitted to the outside. In an embodiment, the first light-emitting region LA1, the second light-emitting region LA2, and the third light-emitting region LA3 can be arranged sequentially and repeatedly along a first direction DR1 in the display area DPA.

[0080] The first light-emitting region LA1, the second light-emitting region LA2, and the third light-emitting region LA3 may have different widths measured in the first direction DR1. In an embodiment, for example, the width of the first light-emitting region LA1 may be smaller than the width of the third light-emitting region LA3, and the width of the third light-emitting region LA3 may be smaller than the width of the second light-emitting region LA2. However, the disclosure is not limited thereto, and the first light-emitting region LA1, the second light-emitting region LA2, and the third light-emitting region LA3 may have the same width measured in the first direction DR1.

[0081] The emitting regions LA1 to LA3 can emit light of different colors. In an embodiment, the first emitting region LA1 can emit light of a first color, the second emitting region LA2 can emit light of a second color, and the third emitting region LA3 can emit light of a third color. In an embodiment, the first color light can be blue light having a peak wavelength in the range of about 440 nanometers (nm) to about 480 nm, and the second color light can be red light having a peak wavelength in the range of about 610 nm to about 650 nm. Furthermore, the third color light can be green light having a peak wavelength in the range of about 510 nm to about 550 nm. However, the disclosure is not limited to this, and the second color light can also be green light, and the third color light can also be red light.

[0082] Switching elements T1 to T3 may be located on the substrate SUB. In an embodiment, the first switching element T1 may be located on the substrate SUB in the first light-emitting region LA1, the second switching element T2 may be located on the substrate SUB in the second light-emitting region LA2, and the third switching element T3 may be located on the substrate SUB in the third light-emitting region LA3. However, the disclosure is not limited thereto. In an embodiment, at least one selected from the first switching element T1, the second switching element T2, and the third switching element T3 may be located in the non-light-emitting region NLA.

[0083] In an embodiment, each of the first switching element T1, the second switching element T2, and the third switching element T3 may be a thin-film transistor comprising amorphous silicon, polycrystalline silicon, or oxide semiconductor. Although not shown in the figures, multiple signal lines (e.g., gate lines, data lines, power lines, etc.) transmitting signals to each switching element may also be located on the substrate SUB. Furthermore, each of the switching elements T1 to T3 may include a first insulating layer 120. In an embodiment, for example, the first insulating layer 120 may be a gate insulating film or an interlayer insulating film of the thin-film transistor. The gate insulating film or the interlayer insulating film may be composed of materials selected from silicon oxide (SiO2). x ), silicon oxynitride (SiO) x N y ) and silicon nitride (SiN) x A single layer or multiple layers of at least one of the following:

[0084] The second insulating layer 130 may be disposed on the first switching element T1, the second switching element T2, and the third switching element T3. In an embodiment, the second insulating layer 130 may be a planarization layer. In an embodiment, the second insulating layer 130 may include or be made of an organic film. In an embodiment, for example, the second insulating layer 130 may include acrylic resin, epoxy resin, imide resin, or ester resin. In an embodiment, the second insulating layer 130 may include a positive photosensitive material or a negative photosensitive material.

[0085] The first anode AE1, the second anode AE2, and the third anode AE3 may be located on the second insulating layer 130. The first anode AE1 may be located in the first light-emitting region LA1, but at least a portion of the first anode AE1 may extend into the non-light-emitting region NLA. The second anode AE2 may be located in the second light-emitting region LA2, but at least a portion of the second anode AE2 may extend into the non-light-emitting region NLA. The third anode AE3 may be located in the third light-emitting region LA3, but at least a portion of the third anode AE3 may extend into the non-light-emitting region NLA. The first anode AE1 may penetrate (or be configured to penetrate) the second insulating layer 130 and may be connected to the first switching element T1. The second anode AE2 may penetrate the second insulating layer 130 and may be connected to the second switching element T2. The third anode AE3 may penetrate the second insulating layer 130 and may be connected to the third switching element T3.

[0086] In embodiments, the widths or areas of the first anode AE1, the second anode AE2, and the third anode AE3 may be different from each other. For example, in the first direction DR1, the width of the first anode AE1 may be smaller than the width of the second anode AE2, and the width of the third anode AE3 may be smaller than the width of the second anode AE2 and larger than the width of the first anode AE1. Optionally, in a plane, the area of ​​the first anode AE1 may be smaller than the area of ​​the second anode AE2, and the area of ​​the third anode AE3 may be smaller than the area of ​​the second anode AE2 and larger than the area of ​​the first anode AE1. Optionally, the area of ​​the first anode AE1 may be smaller than the area of ​​the second anode AE2, and the area of ​​the third anode AE3 may be larger than both the areas of the second anode AE2 and the first anode AE1. However, the disclosure is not limited to the embodiments described above. In embodiments, the widths or areas of the first anode AE1, the second anode AE2, and the third anode AE3 may be substantially the same as each other.

[0087] The first anode AE1, the second anode AE2, and the third anode AE3 can be reflective electrodes. The first anode AE1, the second anode AE2, and the third anode AE3 can have a stacked structure of a material layer with high work function and a reflective material layer. The material layer with high work function includes, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), or indium oxide (In2O3). The reflective material layer includes, for example, silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pb), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or mixtures thereof. The material layer with high work function can be located on top of the reflective material layer, such that the material layer with high work function is positioned closer to the light-emitting layer OL than the reflective material layer. The first anode AE1, the second anode AE2, and the third anode AE3 may have, but are not limited to, a multilayer structure of ITO / Mg, ITO / Mg / ITO, ITO / Ag, or ITO / Ag / ITO.

[0088] The pixel defining layer 150 can be located on the first anode AE1, the second anode AE2, and the third anode AE3. The pixel defining layer 150 can be provided with openings exposing the first anode AE1, the second anode AE2, and the third anode AE3, and can define a first light-emitting region LA1, a second light-emitting region LA2, a third light-emitting region LA3, and a non-light-emitting region NLA. That is, the area of ​​the first anode AE1 that is not covered by the pixel defining layer 150 and is exposed can be the first light-emitting region LA1. The area of ​​the second anode AE2 that is not covered by the pixel defining layer 150 and is exposed can be the second light-emitting region LA2. The area of ​​the third anode AE3 that is not covered by the pixel defining layer 150 and is exposed can be the third light-emitting region LA3. Furthermore, the area where the pixel defining layer 150 is positioned can be the non-light-emitting region NLA.

[0089] The pixel defining layer 150 may include organic insulating materials such as polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene resin, polyphenylene sulfide resin, or benzocyclobutene (BCB).

[0090] In an embodiment, the pixel defining layer 150 may be stacked on the third-direction DR3 with the dam 180 of the wavelength conversion layer WCL, which will be described later. The light-emitting layer OL may be located on the first anode AE1, the second anode AE2, and the third anode AE3. In embodiments in which the display device 10 is an organic light-emitting display device, the light-emitting layer OL may include an organic layer comprising organic material. The organic layer includes an organic light-emitting layer, and in some cases may also include at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer as an auxiliary light-emitting layer.

[0091] In an embodiment, the light-emitting layer OL may have a tandem structure comprising a plurality of organic light-emitting layers stacked on top of each other in the thickness direction and a charge-generating layer located between them. The stacked organic light-emitting layers may emit light of the same wavelength or may emit light of different wavelengths. In an embodiment, for example, the stacked organic light-emitting layers may include an organic light-emitting layer that emits green wavelength light and an organic light-emitting layer that emits blue wavelength light. In an embodiment, the stacked organic light-emitting layers may include an organic light-emitting layer that emits red wavelength light, an organic light-emitting layer that emits green wavelength light, and an organic light-emitting layer that emits blue wavelength light.

[0092] In an embodiment, the light-emitting layer OL may be in the shape of a continuous layer extending over the light-emitting regions LA1 to LA3 and the non-light-emitting regions NLA. In this embodiment, the wavelengths of the light emitted from the light-emitting layer OL in the light-emitting regions LA1 to LA3 may be the same. In an embodiment, for example, the light-emitting layer OL may emit blue light, white light, or ultraviolet light in the light-emitting regions LA1 to LA3.

[0093] The cathode (CE) can be located on the light-emitting layer (OL). In embodiments, the cathode (CE) can be translucent or transparent. In embodiments where the cathode (CE) is translucent, it can comprise Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, or compounds or mixtures thereof (e.g., a mixture of Ag and Mg), or it can comprise a multilayer structure of LiF / Ca and LiF / Al. In embodiments where the thickness of the cathode (CE) is tens to hundreds of angstroms, it can be translucent.

[0094] In embodiments where the cathode CE is transparent, the cathode CE may comprise a transparent conductive oxide (TCO). For example, in embodiments, the cathode CE may comprise tungsten oxide (W). x O y Titanium oxide (TiO2), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), or magnesium oxide (MgO).

[0095] A first anode AE1, an emitting layer OL, and a cathode CE can form (or collectively define) a first light-emitting element ED1. A second anode AE2, an emitting layer OL, and a cathode CE can form a second light-emitting element ED2. A third anode AE3, an emitting layer OL, and a cathode CE can form a third light-emitting element ED3. Each of the first light-emitting element ED1, the second light-emitting element ED2, and the third light-emitting element ED3 can emit source light and can provide the source light to a wavelength conversion layer WCL. The source light can be, for example, blue light. However, the disclosure is not limited thereto, and the source light can also be white light or ultraviolet light. The first light-emitting element ED1, the second light-emitting element ED2, and the third light-emitting element ED3 can be organic light-emitting diodes (OLEDs).

[0096] The thin-film encapsulation layer TFEL can be located on the cathode CE. The TFEL can be commonly located within the first light-emitting region LA1, the second light-emitting region LA2, the third light-emitting region LA3, and the non-light-emitting region NLA. In an embodiment, the TFEL can directly cover the cathode CE.

[0097] In an embodiment, the thin-film encapsulation layer TFEL may include a first encapsulation inorganic film 171, an encapsulation organic film 173, and a second encapsulation inorganic film 175 sequentially stacked on the cathode CE.

[0098] The first encapsulating inorganic film 171 and the second encapsulating inorganic film 175 may each include at least one selected from silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, and lithium fluoride. The encapsulating organic film 173 may include acrylic resin, methacrylate resin, polyisoprene resin, vinyl resin, epoxy resin, urethane resin, cellulose resin, or perylene resin.

[0099] However, the structure of the thin-film encapsulation layer TFEL is not limited to the above examples, and the stacking structure of the thin-film encapsulation layer TFEL can be changed in different ways.

[0100] The wavelength conversion layer (WCL) can be located on the thin-film encapsulation layer (TFEL).

[0101] The wavelength conversion layer (WCL) may include a dam 180, a reflective layer 190, a light-transmitting pattern 230, a first wavelength conversion pattern 240, a second wavelength conversion pattern 250, and a capping layer 300.

[0102] The dam 180 may be located on the thin-film encapsulation layer TFEL. The dam 180 may define the light-emitting regions LA1 to LA3 and the non-light-emitting region NLA. The dam 180 may be superimposed on the non-light-emitting region NLA to block light transmission. In an embodiment, the dam 180 may be located between the light-transmitting pattern 230 and the first wavelength conversion pattern 240, between the first wavelength conversion pattern 240 and the second wavelength conversion pattern 250, and between the second wavelength conversion pattern 250 and the light-transmitting pattern 230 to effectively prevent color mixing between adjacent light-emitting regions.

[0103] The embankment 180 may be formed in an inverted conical shape in cross-section. In an embodiment, for example, the embankment 180 may be formed with a lower side (or lower surface) that is narrower than the upper side (or upper surface) and the upper edge may be partially curved, chamfered, or rounded. However, the disclosure is not limited thereto, and the upper edge may be formed as a pointed shape.

[0104] Dam 180 may include an organic light-blocking material and can be formed by a process of coating the organic light-blocking material and exposing it to light, or by an inkjet printing method. In embodiments, for example, Dam 180 may include an organic material and a light-blocking dye or pigment mixed with the organic material. Examples of organic materials may include acrylic resins, methacrylate resins, polyisoprene resins, vinyl resins, epoxy resins, urethane resins, cellulose resins, and perylene resins. Examples of dyes or pigments may include carbon black.

[0105] The reflective layer 190 may be located on a side of the dam 180. The reflective layer 190 serves to prevent light emitted within the area separated by the dam 180 from penetrating (or passing through) into adjacent light-emitting areas and causing color mixing. The reflective layer 190 may extend from the top surface of the second encapsulating inorganic film 175 to the side of the dam 180 (or toward the side of the dam 180) and may be positioned spaced apart from the top surface of the dam 180. In an embodiment, for example, the height of the reflective layer 190 may be smaller than the height of the dam 180. The reflective layer 190 may contact and surround the side (or side surface) of the light-transmitting pattern 230, the side of the first wavelength conversion pattern 240, and the side of the second wavelength conversion pattern 250.

[0106] The reflective layer 190 may include a reflective material such as a reflective metal. The reflective layer 190 may include, for example, silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pb), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or mixtures thereof.

[0107] The light-transmitting pattern 230 can be located on the thin-film encapsulation layer TFEL. The light-transmitting pattern 230 can be superimposed on the first light-emitting region LA1 on the third-direction DR3. The light-transmitting pattern 230 can transmit incident light. When the source light provided from the first light-emitting element ED1 is blue light, the blue source light can pass through the light-transmitting pattern 230.

[0108] In an embodiment, the light-transmitting pattern 230 may include a first matrix resin 231, and may also include a first scatterer 233 dispersed in the first matrix resin 231.

[0109] The first matrix resin 231 may be made of a material having relatively high light transmittance. In embodiments, the first matrix resin 231 may include or be made of organic materials. In embodiments, for example, the first matrix resin 231 may include organic materials such as epoxy resin, acrylic resin, cardo resin, or imide resin.

[0110] The first scatterer 233 may have a refractive index different from that of the first matrix resin 231 and may form an optical interface with the first matrix resin 231. In embodiments, for example, the first scatterer 233 may be a light-scattering particle. The first scatterer 233 is not particularly limited, as long as it is formed of a material capable of scattering at least a portion of the transmitted light. However, the first scatterer 233 may be, for example, metal oxide particles or organic particles. The metal oxide may be, for example, titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2), and the organic particles may be made of, for example, acrylic resin or urethane resin. The first scatterer 233 may scatter incident light in random directions regardless of the incident direction of the light without substantially changing the wavelength of the incident light passing through the light-transmitting pattern 230.

[0111] In this embodiment, the light-transmitting pattern 230 can be formed by applying a photosensitive material and exposing and developing the photosensitive material. Therefore, the thickness of the light-transmitting pattern 230 can be greater than the thickness of the embankment 180. Here, thickness can refer to the width or height measured in a third direction DR3 starting from the top surface of the second encapsulating inorganic film 175.

[0112] The first wavelength conversion pattern 240 and the second wavelength conversion pattern 250 can be located on the thin-film encapsulation layer TFEL.

[0113] The first wavelength conversion pattern 240 may be located on the thin-film encapsulation layer TFEL and may be superimposed on the second light-emitting region LA2 on the third-direction DR3. The first wavelength conversion pattern 240 may be located in the region separated by the dam 180 and contact the side surface of the reflective layer 190, but not the dam 180. In an embodiment, for example, the thickness of the first wavelength conversion pattern 240 may be smaller than the thickness of the dam 180.

[0114] The first wavelength conversion pattern 240 can convert or shift the peak wavelength of the incident light to another specific peak wavelength and output light of that specific peak wavelength. In an embodiment, the first wavelength conversion pattern 240 can convert source light provided from the second light-emitting element ED2 into red light having a peak wavelength in the range of about 610 nm to 650 nm and can output red light.

[0115] The first wavelength conversion pattern 240 may include a second matrix resin 241 and a first wavelength shifter 245 dispersed in the second matrix resin 241, and may also include a second scatterer 243 dispersed in the second matrix resin 241.

[0116] The second matrix resin 241 may include or be made of a material with high light transmittance. In embodiments, the second matrix resin 241 may include or be made of an organic material. The second matrix resin 241 may include or be made of the same material as the first matrix resin 231, or may include at least one of the example materials selected from the first matrix resin 231 listed above.

[0117] The first wavelength shifter 245 can convert or shift the peak wavelength of the incident light to another specific peak wavelength. In an embodiment, the first wavelength shifter 245 can convert source light (e.g., light of the first color, blue light) provided from the second light-emitting element ED2 into red light having a peak wavelength in the range of about 610 nm to 650 nm, and can output red light.

[0118] The first wavelength shifter 245 can be, for example, a quantum dot, a quantum rod, or a phosphor. In an embodiment, for example, a quantum dot can be a particulate material that emits light of a specific color when an electron transitions from the conduction band to the valence band.

[0119] Quantum dots can be semiconductor nanocrystal materials. Quantum dots can have specific band gaps depending on their composition and size. Therefore, quantum dots can absorb light and then emit light with a unique wavelength. Examples of semiconductor nanocrystals containing quantum dots can include group IV element or compound nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI compound nanocrystals, and combinations thereof.

[0120] Group II-VI compounds may be selected from: binary compounds, selected from CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; ternary compounds, selected from CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof; and quaternary compounds, selected from CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0121] III-V group compounds may be selected from: binary compounds, selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; ternary compounds, selected from GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb and mixtures thereof; and quaternary compounds, selected from GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof.

[0122] Group IV-VI compounds may be selected from: binary compounds, selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof; ternary compounds, selected from SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof; and quaternary compounds, selected from SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof. Group IV elements may be selected from silicon (Si), germanium (Ge) and mixtures thereof. Group IV compounds may be binary compounds selected from silicon carbide (SiC), silicon germanide (SiGe) and mixtures thereof.

[0123] Here, binary, ternary, or quaternary compounds may exist in the particles at a uniform concentration or in the same particle at partially different concentrations. Furthermore, they may have a core / shell structure in which one quantum dot surrounds another quantum dot. The interface between the core and shell may have a concentration gradient in which the concentration of the element present in the shell decreases towards the center.

[0124] In embodiments, quantum dots may have a core / shell structure comprising a core containing nanocrystals as described above and a shell surrounding the core. The shell of each quantum dot may serve as a protective layer to maintain semiconductor properties by preventing chemical denaturation of the core and / or as a charged layer to impart electrophoretic properties to the quantum dot. The shell may be single-layered or multi-layered. The shell of each quantum dot may be, for example, a metal or non-metal oxide, a semiconductor compound, or a combination thereof.

[0125] For example, the metal or non-metal oxide can be, but is not limited to, binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4 or NiO, or ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4 or CoMn2O4.

[0126] In addition, the semiconductor compound may be, but is not limited to, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, or AlSb.

[0127] The light emitted from the first wavelength shifter 245 can have a full width at half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, about 40 nm or less, or about 30 nm or less. Therefore, the color purity and color reproducibility of the display device 10 can be further improved. Furthermore, the light emitted from the first wavelength shifter 245 can radiate in various directions, regardless of the incident direction of the incident light. Therefore, the lateral visibility of the second color displayed in the second emitting region LA2 can be improved.

[0128] A portion of the source light supplied from the second light-emitting element ED2 may not be converted to red light by the first wavelength shifter 245. However, the portion of the source light that is not converted to red light can be blocked by the color filter layer CFL located above the wavelength conversion layer WCL. On the other hand, the red light that has been converted by the first wavelength conversion pattern 240 can pass through the color filter layer CFL and then be emitted to the outside.

[0129] The second scatterer 243 may have a refractive index different from that of the second matrix resin 241, and may form an optical interface with the second matrix resin 241. In an embodiment, for example, the second scatterer 243 may be a light-scattering particle. Other details of the second scatterer 243 are substantially the same as or similar to those of the first scatterer 233 described above, and therefore any repeated detailed descriptions thereof will be omitted.

[0130] The second wavelength conversion pattern 250 may be located on the thin-film encapsulation layer TFEL and may be superimposed on the third directional DR3 with the third light-emitting region LA3. The second wavelength conversion pattern 250 may be located in the region separated by the dam 180 and contact the side surface of the reflective layer 190, but not the dam 180. In an embodiment, for example, the thickness of the second wavelength conversion pattern 250 may be smaller than the thickness of the dam 180. The second wavelength conversion pattern 250 may convert or shift the peak wavelength of the incident light to another specific peak wavelength and output light of that specific peak wavelength. In an embodiment, the second wavelength conversion pattern 250 may convert source light provided from the third light-emitting element ED3 into green light in the range of about 510 nm to about 550 nm and may output green light.

[0131] The second wavelength conversion pattern 250 may include a third matrix resin 251 and a second wavelength shifter 255 dispersed in the third matrix resin 251, and may also include a third scatterer 253 dispersed in the third matrix resin 251.

[0132] The third matrix resin 251 may include or be made of a material with high light transmittance. In embodiments, the third matrix resin 251 may include or be made of an organic material. The third matrix resin 251 may include or be made of the same material as the first matrix resin 231, or may include at least one of the example materials selected from the first matrix resin 231 listed above.

[0133] The second wavelength shifter 255 can convert or shift the peak wavelength of the incident light to another specific peak wavelength. In an embodiment, the second wavelength shifter 255 can convert source light (e.g., blue light) having a peak wavelength in the range of about 440 nm to 480 nm into green light having a peak wavelength in the range of about 510 nm to 550 nm.

[0134] The second wavelength shifter 255 can be, for example, a quantum dot, a quantum rod, or a phosphor. A more detailed description of the second wavelength shifter 255 is substantially the same as or similar to the above description of the first wavelength shifter 245, and therefore any repeated detailed descriptions will be omitted. In embodiments, both the first wavelength shifter 245 and the second wavelength shifter 255 can be composed of or defined by quantum dots. In such embodiments, the particle size of the quantum dots forming the first wavelength shifter 245 can be larger than the particle size of the quantum dots forming the second wavelength shifter 255.

[0135] The third scatterer 253 may have a refractive index different from that of the third matrix resin 251 and may form an optical interface with the third matrix resin 251. In an embodiment, for example, the third scatterer 253 may be a light-scattering particle. Other details of the third scatterer 253 are substantially the same as or similar to those of the first scatterer 233 described above, and therefore any repeated detailed descriptions thereof will be omitted.

[0136] The source light emitted from the third light-emitting element ED3 can be provided to the second wavelength conversion pattern 250, and the second wavelength shifter 255 can convert the source light emitted from the third light-emitting element ED3 into green light having a peak wavelength in the range of about 510 nm to about 550 nm, and can output green light.

[0137] A portion of the source light can pass through the second wavelength conversion pattern 250 without being converted to green light by the second wavelength shifter 255. However, the portion of the source light that is not converted to green light can be blocked by the color filter layer CFL. On the other hand, the green light that has been converted by the second wavelength conversion pattern 250 can pass through the color filter layer CFL and then be emitted to the outside.

[0138] The light-transmitting pattern 230 described above can be positioned to cover the reflective layer 190 and the dam 180. In an embodiment, for example, the light-transmitting pattern 230 can be positioned to cover a portion of the top surface of the dam 180 and the reflective layer 190. As will be described later, the light-transmitting pattern 230 can be formed by a photolithography process and positioned to cover the reflective layer 190 and the dam 180.

[0139] In one embodiment, the first wavelength conversion pattern 240 and the second wavelength conversion pattern 250 may both contact the reflective layer 190, but may not contact the dam 180. In another embodiment, the light-transmitting pattern 230, the first wavelength conversion pattern 240, and the second wavelength conversion pattern 250 may all cover the reflective layer 190 and may contact the side of the dam 180. As will be described later, the first wavelength conversion pattern 240 and the second wavelength conversion pattern 250 may be applied and disposed in the area defined by the dam 180 by an inkjet printing process.

[0140] The capping layer 300 can be located on the dike 180, reflective layer 190, light-transmitting pattern 230, first wavelength conversion pattern 240, and second wavelength conversion pattern 250 to cover them. Therefore, the capping layer 300 can effectively prevent damage or contamination to the dike 180, reflective layer 190, light-transmitting pattern 230, first wavelength conversion pattern 240, and second wavelength conversion pattern 250 by preventing impurities such as moisture or air from penetrating from the outside.

[0141] The capping layer 300 may include or be made of inorganic materials. In embodiments, for example, the capping layer 300 may include silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, or silicon oxynitride.

[0142] According to the embodiment, by including a dam 180 with an inverted cone shape and a reflective layer 190 on the side of the dam 180, color mixing caused by light penetrating to adjacent pixels can be effectively prevented.

[0143] The filler layer LRF can be located on the capping layer 300. The filler layer LRF can be located directly on the capping layer 300 and between the wavelength conversion layer WCL and the color filter layer CFL. The filler layer LRF can contact each of the wavelength conversion layer WCL and the color filter layer CFL. The filler layer LRF can completely cover the top of the wavelength conversion layer WCL. The filler layer LRF can be located over the entire display area DPA of the display device 10 (see...). Figure 1 In an embodiment, for example, the filling layer LRF may be located in the light-emitting regions LA1 to LA3 and the non-light-emitting region NLA in the display area DPA. Furthermore, the filling layer LRF may extend to the non-display area NDA of the display device 10 (see [link to relevant documentation]). Figure 1 ).

[0144] Compared to the light-transmitting pattern 230, the first wavelength conversion pattern 240, the second wavelength conversion pattern 250, and the capping layer 300, the filler layer LRF can have a relatively lower refractive index. Due to the difference in refractive index between the filler layer LRF and the capping layer 300, the filler layer LRF can totally reflect some of the light emitted from the wavelength conversion layer WCL. The totally reflected light can re-enter the first wavelength conversion pattern 240 and the second wavelength conversion pattern 250 and be reused for wavelength conversion, or it can be reflected back to the front by the scatterers of the wavelength conversion layer WCL. Therefore, the front luminous efficiency of the display device 10 including the filler layer LRF can be improved.

[0145] The thickness of the filler layer LRF can range from about 0.1 micrometers (μm) to about 4.5 μm. If the thickness of the filler layer LRF is about 0.1 μm or greater, the flatness of the filler layer LRF can be ensured, and gaps with the color filter layer CFL can be easily formed. If the thickness of the filler layer LRF is about 4.5 μm or less, defects can be prevented by preventing moisture or oxygen from penetrating through the filler layer LRF from the outside. The refractive index of the filler layer LRF can range from about 1.05 to about 1.4. If the refractive index of the filler layer LRF is about 1.05 or greater, the front-side brightness ratio of the display device 10 can be increased. If the refractive index of the filler layer LRF is about 1.4 or less, a decrease in the front-side brightness efficiency of the display device 10 can be prevented.

[0146] The color filter layer CFL can be located on the filler layer LRF, and the substrate TSUB can be located on the color filter layer CFL.

[0147] The color filter layer CFL may include a first color filter 350, a second color filter 360, and a third color filter 370. Furthermore, the color filter layer CFL may include a first color pattern 355, a second color pattern 365, and a third color pattern 375.

[0148] The first color filter 350 can be located between the substrate TSUB and the filler layer LRF, and can be superimposed on the third light-emitting region LA3 on the third-direction DR3. The first color filter 350 can be superimposed on the third light-emitting element ED3 and the second wavelength conversion pattern 250 on the third-direction DR3. The first color pattern 355 can be spaced apart from the first color filter 350, and can be superimposed on the non-light-emitting region NLA on the third-direction DR3. The first color filter 350 can directly contact the filler layer LRF.

[0149] The first color filter 350 and the first color pattern 355 can selectively transmit a third color of light (e.g., green light) and can block or absorb the first color of light (e.g., blue light) and the second color of light (e.g., red light). In an embodiment, the first color filter 350 may be a green color filter and may include a green colorant such as a green dye or green pigment. As used herein, the term "colorant" is a concept that includes both dyes and pigments.

[0150] The second color filter 360 can be located between the substrate TSUB and the filler layer LRF, and can be stacked on the third-direction DR3 with the second light-emitting region LA2. The second color filter 360 can be stacked on the third-direction DR3 with the second light-emitting element ED2 and the first wavelength conversion pattern 240. In an embodiment, one side of the second color filter 360 can be stacked on the third-direction DR3 with the non-light-emitting region NLA and the adjacent first color filter 350. The other side of the second color filter 360 can be stacked on the third-direction DR3 with the non-light-emitting region NLA and the first color pattern 355. The second color pattern 365 can be spaced apart from the second color filter 360 and can be stacked with the non-light-emitting region NLA. The second color pattern 365 can be stacked on the third-direction DR3 within the non-light-emitting region NLA with the first color filter 350. The second color filter 360 can directly contact the filler layer LRF.

[0151] The second color filter 360 and the second color pattern 365 can selectively transmit light of a second color (e.g., red light) and can block or absorb light of a first color (e.g., blue light) and a third color (e.g., green light). In an embodiment, for example, the second color filter 360 may be a red color filter and may include a red colorant such as a red dye or red pigment.

[0152] The third color filter 370 can be located between the substrate TSUB and the filler layer LRF, and can be stacked with the first light-emitting region LA1. The third color filter 370 can be stacked with the first light-emitting element ED1 and the light-transmitting pattern 230 on the third-direction DR3. In an embodiment, one side of the third color filter 370 can be stacked with the non-light-emitting region NLA and the adjacent second color filter 360 on the third-direction DR3. Furthermore, the other side of the third color filter 370 can be stacked with the non-light-emitting region NLA on the third-direction DR3, and can be stacked with the adjacent first color filter 350 and the second color pattern 365 on the third-direction DR3. The third color pattern 375 can be spaced apart from the third color filter 370, and can be stacked with the non-light-emitting region NLA on the third-direction DR3. The third color pattern 375 can be stacked with the second color filter 360 in the non-light-emitting region NLA on the third-direction DR3. The third color filter 370 and the third color pattern 375 can directly contact the filler layer LRF.

[0153] The third color filter 370 can selectively transmit light of the first color (e.g., blue light) and can block or absorb light of the second color (e.g., red light) and the third color (e.g., green light). In an embodiment, for example, the third color filter 370 may be a blue color filter and may include a blue colorant such as a blue dye or blue pigment.

[0154] In this embodiment, as described above, the first color filter 350, the second color filter 360, and the third color filter 370, as well as the first color pattern 355, the second color pattern 365, and the third color pattern 375, can be stacked on top of each other in the non-emitting region NLA to block or absorb light. In this embodiment, for example, the first color pattern 355, the second color filter 360, and the third color filter 370 can be stacked on top of each other in the non-emitting region NLA located on one side of the second emitting region LA2, and the first color filter 350, the second color filter 360, and the third color pattern 375 can be stacked on top of each other in the non-emitting region NLA located on the other side of the second emitting region LA2.

[0155] The manufacturing process will now be described. Figure 5 The method of display device 10 shown in the embodiment is illustrated. Hereinafter, the process for fabricating the wavelength conversion layer WCL will be primarily described, and other structures such as... Figure 5 As shown in the diagram. The formation process for each layer can be performed using either a general patterning process or an inkjet process. The formation methods for each process will be briefly described below, with a focus on the formation sequence for explanation.

[0156] Figures 6 to 10 This is a cross-sectional view illustrating a method of manufacturing a display device according to an embodiment.

[0157] Reference Figures 5 to 7 In an embodiment of the method for manufacturing a display device, a substrate SUB is prepared. A light-emitting element layer EML (see [link to documentation]) can be prepared thereon. Figure 5 ) and thin-film encapsulation layer TFEL (see Figure 5 The substrate SUB. In an embodiment, for example, a light-emitting element layer EML (see [reference]) can be formed on the substrate SUB. Figure 5 ), and can be applied to the light-emitting element layer EML (see Figure 5 A thin-film encapsulation layer TFEL (see) is formed on the surface. Figure 5 For ease of explanation and description, Figures 6 to 10 Only the second encapsulation inorganic film 175 of the thin-film encapsulation layer TFEL is shown, and the description of the structure below it will be omitted.

[0158] In an embodiment of the method for manufacturing a display device, in the thin-film encapsulation layer TFEL (see... Figure 5 A dam 180 is formed on the second encapsulating inorganic film 175. The dam 180 may include a negative material comprising an organic light-blocking material. In an embodiment, for example, the dam 180 may be a negative photoresist. The dam 180 can be manufactured by coating the second encapsulating inorganic film 175 with a negative photoresist and then exposing and developing it. The dam 180 can be formed as follows: Figure 6 The inverted cone shape shown.

[0159] Next, a reflective material layer RFL is formed on the dike 180. The reflective material layer RFL can be formed by stacking reflective materials using chemical or physical vapor deposition methods. In an embodiment, for example, the reflective material layer RFL can be formed by a sputtering process. The reflective material layer RFL can be deposited entirely on the dike 180 and the second encapsulating inorganic film 175.

[0160] Subsequently, the reflective material layer RFL is etched to form the reflective layer 190. The reflective material layer RFL can be etched using an anisotropic dry etching process. The anisotropic dry etching process involves etching in the vertical direction shown in the figures, and due to its inverted conical shape, it can etch and remove portions of the reflective material layer RFL other than those on the side surfaces of the dam 180. In an embodiment, for example, the reflective layer 190 can be formed only on the side surfaces of the dam 180 as described above. Therefore, in this embodiment, the reflective layer 190 can be formed without using a mask.

[0161] Next, a photolithographic pattern BNP is formed on the dam 180. The photolithographic pattern BNP may include a positive photoresist containing a hydrophobic material. For example, the photolithographic pattern BNP can be fabricated by coating a positive photoresist and then exposing and developing it. The photolithographic pattern BNP can be formed directly on the upper surface of the dam 180, and the photolithographic pattern BNP can be formed into a regular conical shape. Furthermore, the photolithographic pattern BNP can be formed such that the hydrophobic material floats on the top surface of the photolithographic pattern BNP, and the top surface of the photolithographic pattern BNP can exhibit hydrophobic properties.

[0162] Next, refer to Figure 8 In conjunction with the second luminescent region LA2 (see...) Figure 5 A first wavelength conversion pattern 240 is formed in the region corresponding to the third emitting region LA3 (see...). Figure 5 A second wavelength conversion pattern 250 is formed in the corresponding region.

[0163] In the embodiment, in conjunction with the second light-emitting region LA2 (see... Figure 5 A first wavelength conversion material is applied to the corresponding area. The first wavelength conversion material may include a second matrix resin 241 dispersed in a solvent, a first wavelength shifter 245, and a second scatterer 243. The first wavelength conversion material can be applied by a solution process (such as inkjet printing). When the first wavelength conversion material is applied to the space defined by the dam 180 and the photolithographic pattern BNP, the first wavelength conversion material can be applied to a thickness similar to the surface of the photolithographic pattern BNP. Specifically, the surface of the photolithographic pattern BNP can exhibit hydrophobic properties, thereby effectively preventing the first wavelength conversion material from overflowing into other spaces outside the photolithographic pattern BNP. Subsequently, when the solvent of the first wavelength conversion material evaporates through heat treatment, such as Figure 8 The thickness shown gradually decreases and can eventually be formed by ultraviolet (UV) and / or thermal curing to form the first wavelength conversion pattern 240.

[0164] Subsequently, the second wavelength conversion material was applied to the third emitting region LA3 (see...). Figure 5 The corresponding region. The second wavelength conversion material may include a third matrix resin 251 dispersed in a solvent, a second wavelength shifter 255, and a third scatterer 253. The second wavelength conversion material can be applied by a solution process (such as inkjet printing). The second wavelength conversion material is applied to the space separated by the dam 180 and the photolithographic pattern BNP, and then heat-treated in the same manner as the first wavelength conversion pattern 240 to evaporate the solvent, and then cured by UV and / or thermal curing to finally form the second wavelength conversion pattern 250.

[0165] exist Figure 8 In the diagram, the first wavelength conversion pattern 240 and the second wavelength conversion pattern 250 are shown as being manufactured simultaneously. However, as described above, the first wavelength conversion pattern 240 and the second wavelength conversion pattern 250 can be formed sequentially.

[0166] Next, refer to Figure 9 The photolithographic pattern BNP can be stripped and removed. The photolithographic pattern BNP may include positive photoresist, so the stripping process can be relatively easier compared to negative photoresist. Therefore, it is possible to effectively prevent the appearance of photolithographic pattern BNP residue on the dam 180.

[0167] Subsequently, it can be used in conjunction with the first luminescent region LA1 (see...) Figure 5 A light-transmitting pattern 230 is formed in the corresponding region. Unlike the first wavelength conversion pattern 240 and the second wavelength conversion pattern 250, the light-transmitting pattern 230 can be fabricated by photolithography. In an embodiment, for example, a light-transmitting material can be coated entirely on the dike 180 and the second encapsulating inorganic film 175, and then patterned by photolithography to form the light-transmitting pattern 230. The light-transmitting material may include a first matrix resin 231 and a first scatterer 233 dispersed in a solvent. The light-transmitting pattern 230 can be formed by photolithography as a structure covering a portion of the top surface of the dike 180.

[0168] Next, refer to Figure 10 A capping layer 300 is formed on the dam 180, the light-transmitting pattern 230, the first wavelength conversion pattern 240, and the second wavelength conversion pattern 250 to manufacture the wavelength conversion layer WCL. The capping layer 300 can be formed by stacking inorganic insulating materials throughout.

[0169] Subsequently, although not shown, a color filter layer CFL can be formed on the substrate TSUB, and the substrate TSUB can be bonded to the wavelength conversion layer WCL by the filler layer LRF to manufacture the display device 10.

[0170] According to an embodiment, since the reflective layer 190 is formed using an inverted conical dam 180, a mask process can be omitted. In this embodiment, a large amount of wavelength conversion material can be applied by forming a photolithographic pattern BNP using a positive photoresist, and can then be easily removed.

[0171] Other embodiments will be described below with reference to the other accompanying drawings.

[0172] Figure 11 This is a cross-sectional view of a display device according to another embodiment. For example, Figure 11 It shows about Figure 5 Another embodiment of the structure of the part.

[0173] Except that the capping layer 300 is discontinuous and separate, the reflective layer 190 is omitted, and the light-transmitting pattern 230 is located on the capping layer 300, Figure 11 Implementation examples and Figure 5 The embodiments are basically the same. In the following text, the similarities will be omitted. Figure 5 Any repeated detailed descriptions of the same elements and features will be omitted, and the differences will be described below.

[0174] In an embodiment, the dam 180 may be located on the thin-film encapsulation layer TFEL, and the first wavelength conversion pattern 240 may be formed in the region defined by the dam 180 (e.g., the region corresponding to the second light-emitting region LA2), and the second wavelength conversion pattern 250 may be located in the region corresponding to the third light-emitting region LA3.

[0175] The capping layer 300 may be located on the dam 180, the first wavelength conversion pattern 240, and the second wavelength conversion pattern 250. The capping layer 300 may be located discontinuously but separately on the dam 180. In an embodiment, for example, the capping layer 300 may be located on the dam 180 to partially expose the top surface of the dam 180. Furthermore, in the region corresponding to the first light-emitting region LA1, the capping layer 300 may be positioned to directly contact the side of the dam 180 and the second encapsulation inorganic film 175, and may be located between the second encapsulation inorganic film 175 and the light-transmitting pattern 230.

[0176] The light-transmitting pattern 230 can be located on the cover layer 300 in the area corresponding to the first light-emitting area LA1. The light-transmitting pattern 230 can be directly set on the cover layer 300 and does not need to contact the embankment 180.

[0177] In the following text, reference will be made to Figures 12 to 16Description of manufacturing Figure 11 The method of the display device 10 shown. Elements identical to those described above will be omitted or simplified. Figures 6 to 10 The manufacturing method of the component will not be described in any repeated detailed description, and the differences will be described in detail.

[0178] Figures 12 to 16 This is a cross-sectional view illustrating a method of manufacturing a display device according to another embodiment.

[0179] Reference Figure 12 and Figure 13 In an embodiment of the method for manufacturing a display device, in the thin-film encapsulation layer TFEL (see... Figure 5 A dam 180 is formed on the second encapsulation inorganic film 175, and a reflective material layer RFL is formed on the dam 180. A photolithographic pattern BNP is formed on the reflective material layer RFL corresponding to the dam 180.

[0180] Subsequently, the reflective layer 190 is formed by etching the reflective material layer RFL. A wet etching process can be used to etch the reflective material layer RFL. Areas of the reflective material layer RFL not masked by the photolithographic pattern BNP can be etched and removed using a photolithographic pattern BNP as a mask. Furthermore, due to the wet etching process, the reflective material layer RFL may be over-etched at the bottom of the photolithographic pattern BNP, forming an undercut structure. In an embodiment, for example, the side surface of the photolithographic pattern BNP may be formed to protrude outward from the side surface of the reflective layer 190.

[0181] Next, refer to Figure 14 In conjunction with the second luminescent region LA2 (see...) Figure 5 A first wavelength conversion pattern 240 is formed in the region corresponding to the third emitting region LA3 (see...). Figure 5 A second wavelength conversion pattern 250 is formed in the corresponding region.

[0182] Subsequently, a capping material layer CPL is stacked entirely on the photolithographic pattern BNP, the dam 180, the first wavelength conversion pattern 240, and the second wavelength conversion pattern 250. At this time, the capping material layer CPL can be separated by the undercut structure formed by the photolithographic pattern BNP and the reflective layer 190, and is stacked on the side of the reflective layer 190. That is, the capping material layer CPL can be stacked in a separate shape rather than continuously. The capping material layer CPL can be formed to cover the first wavelength conversion pattern 240 and the second wavelength conversion pattern 250, and can be formed to cover the second encapsulation inorganic film 175 and the first light-emitting region LA1 (see...). Figure 11 The corresponding area.

[0183] Next, refer to Figure 15The photolithographic pattern BNP is peeled off and removed. In an embodiment, for example, a stripping agent capable of peeling off the photolithographic pattern BNP can be applied to the entire surface. Due to the undercut structure formed by the photolithographic pattern BNP and the reflective layer 190, the stripping agent can penetrate into the photolithographic pattern BNP through the portion not covered by the capping material layer CPL to peel off the photolithographic pattern BNP. The capping layer 300 can be formed by removing the portion of the capping material layer CPL located on the photolithographic pattern BNP along with the photolithographic pattern BNP. Therefore, the capping layer 300 can be formed on the dike 180 in a separate or discontinuous manner.

[0184] Subsequently, referring to Figure 16 The reflective layer 190 is etched and removed. The etching process for the reflective layer 190 can be a wet etching process. In an embodiment, for example, the reflective layer 190 can be removed by applying an etchant to the entire surface.

[0185] Next, by connecting with the first luminescent region LA1 (see...) Figure 11 A light-transmitting pattern 230 is formed in the corresponding area to create the wavelength conversion layer WCL.

[0186] According to the embodiment, since the first wavelength conversion pattern 240 and the second wavelength conversion pattern 250 are covered and protected by the capping material layer CPL before the lift-off process of the photolithographic pattern BNP, damage to the first wavelength conversion pattern 240 and the second wavelength conversion pattern 250 due to the lift-off process of the photolithographic pattern BNP can be effectively prevented. Furthermore, due to the undercut structure between the photolithographic pattern BNP and the reflective layer 190, the lift-off of the photolithographic pattern BNP can be facilitated even when the capping material layer CPL is formed.

[0187] Figure 17 This is a cross-sectional view of a display device according to yet another embodiment. For example, Figure 17 It shows about Figure 5 and Figure 11 Another example of the structure of the same part.

[0188] In addition to the fact that the embankment 180 covers the area corresponding to the first light-emitting area LA1 and that the embankment 180 is formed of a light-transmitting material, Figure 17 The embodiments described above are the same as those described above. Figure 5 The embodiments are basically the same. In the following text, the similarities or simplifications will be omitted or simplified. Figure 5 Any repeated detailed descriptions of the same elements and features will be omitted, and the differences will be described below.

[0189] In an embodiment, the dam 180 may be located on the thin-film encapsulation layer TFEL, the first wavelength conversion pattern 240 may be formed in the region defined by the dam 180 (e.g., the region corresponding to the second light-emitting region LA2), and the second wavelength conversion pattern 250 may be located in the region corresponding to the third light-emitting region LA3.

[0190] In an embodiment, the dam 180 may be located in the region corresponding to the first light-emitting region LA1 (e.g., in the region superimposed on the first light-emitting region LA1). In an embodiment, for example, the dam 180 may be positioned to cover the thin-film encapsulation layer TFEL, except for the regions superimposed on the second light-emitting region LA2 and the third light-emitting region LA3.

[0191] The dam 180 may include the material of the light-transmitting pattern 230 described above. In an embodiment, for example, the dam 180 may include a first matrix resin 231 and a first scatterer 233 dispersed in the first matrix resin 231. In an embodiment, the dam 180, comprising a transparent first matrix resin 231 and a first scatterer 233, may be formed to simultaneously serve as the light-transmitting pattern 230 of the first light-emitting region LA1. The dam 180 may transmit light emitted from the light-emitting element layer EML.

[0192] The reflective layer 190 may be located on the side surface of the dam 180 and surround the first wavelength conversion pattern 240 and the second wavelength conversion pattern 250. As described above, when the dam 180 is made of a transparent material, light may leak into adjacent light-emitting areas, and color mixing may occur. Therefore, in this embodiment, the reflective layer 190 may be formed around the sides of the first wavelength conversion pattern 240 and the second wavelength conversion pattern 250 to effectively prevent color mixing.

[0193] The capping layer 300 can be located on the embankment 180, the first wavelength conversion pattern 240, and the second wavelength conversion pattern 250.

[0194] In the following text, reference will be made to Figures 18 to 21 Description of manufacturing Figure 17 The method of the display device 10 shown will be briefly mentioned. Figures 6 to 10 and Figures 12 to 16 The manufacturing method will be described repeatedly, and the differences will be the main focus.

[0195] Figures 18 to 21 This is a cross-sectional view showing a method of manufacturing a display device according to yet another embodiment.

[0196] Reference Figure 18 and Figure 19 In the thin-film encapsulation layer TFEL (see Figure 17A dam 180 is formed on the second encapsulation inorganic film 175. The dam 180 can be fabricated by applying a dam material and using a photolithography process. In an embodiment, for example, a dam material comprising a first matrix resin 231 and a first scatterer 233 is entirely coated onto the second encapsulation inorganic film 175, and then patterned using a photolithography process to form the dam 180. The dam 180 can be formed in an inverted conical shape and completely covers the area except for the second light-emitting region LA2 (see...). Figure 17 ) and the third luminescent region LA3 (see Figure 7 The remaining area outside the corresponding area.

[0197] Next, after stacking the reflective material layer RFL on the dam 180, an anisotropic dry etching process is performed to form a reflective layer 190 on the side surface of the dam 180. Then, a photolithographic pattern BNP is formed on the dam 180. The photolithographic pattern BNP can be formed around the second light-emitting region LA2 (see... Figure 17 ) and the third luminescent region LA3 (see Figure 17 The corresponding area.

[0198] Subsequently, referring to Figure 20 In conjunction with the second luminescent region LA2 (see...) Figure 17 A first wavelength conversion pattern 240 is formed in the region corresponding to the third emitting region LA3 (see...). Figure 17 A second wavelength conversion pattern 250 is formed in the corresponding region.

[0199] Next, refer to Figure 21 A capping layer 300 is formed on the dam 180, the first wavelength conversion pattern 240, and the second wavelength conversion pattern 250 to manufacture the wavelength conversion layer WCL.

[0200] According to the embodiment, since the dam 180, including the first matrix resin 231 and the first diffuser 233, is formed to not only function as a dam but also as a light-transmitting pattern, the manufacturing process can be simplified. Furthermore, a reflective layer 190 can be formed to effectively prevent color mixing caused by the transparent dam 180.

[0201] The display device according to the disclosed embodiments can be applied to various electronic devices. The electronic device according to the disclosed embodiments includes the display device described above, and may also include modules or devices with additional functions in addition to the display device.

[0202] Figure 22 This is a block diagram of an electronic device according to a disclosed embodiment.

[0203] Reference Figure 22 The electronic device 1 according to the disclosed embodiments may include a display module 11, a processor 12, a memory 13, and a power module 14.

[0204] The processor 12 may include at least one selected from a central processing unit (CPU), an application processor (AP), a graphics processing unit (GPU), a communication processor (CP), an image signal processor (ISP), and a controller.

[0205] The memory 13 can store data information required for the operation of the processor 12 or the display module 11. When the processor 12 executes the application stored in the memory 13, image data signals and / or input control signals are transmitted to the display module 11, and the display module 11 can process the received signals and output image information through the display screen.

[0206] The power module 14 may include a power module such as a power adapter or battery, and a power conversion module that converts the power supplied by the power module to generate power for the operation of the electronic device 1.

[0207] At least one component selected from the components of the electronic device 1 according to the disclosed embodiments may be included in the display device 10 according to the disclosed embodiments. Furthermore, some modules functionally included in the electronic device 1 may be included in the display device 10, and other modules may be disposed separately from the display device 10. In embodiments, for example, the display device 10 may include a display module 11, and a processor 12, a memory 13, and a power module 14 may be disposed in the electronic device 1 as other devices besides the display device 10.

[0208] Figure 23 This is a schematic diagram of an electronic device according to various disclosed embodiments.

[0209] Reference Figure 23 Various electronic devices employing the display device 10 according to the disclosed embodiments may include not only image display electronic devices (such as smartphones 10_1a, tablet PCs (personal computers) 10_1b, laptop computers 10_1c, televisions 10_1d, and desktop monitors 10_1e), but also wearable electronic devices (such as smart glasses 10_2a, head-mounted displays 10_2b, and smartwatches 10_2c) and vehicle electronic devices 10_3 (such as central information displays (CIDs) and interior mirror displays arranged on the dashboard, center panel, and instrument panel of a vehicle) that include display modules.

[0210] The utility model should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the inventive concept to those skilled in the art.

[0211] Although the utility model has been specifically shown and described with reference to embodiments thereof, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit or scope of the utility model as defined by the claims.

Claims

1. A display device, characterized in that, The display device includes: Base; A light-emitting element layer is disposed on the substrate, wherein the light-emitting element layer includes a first light-emitting region, a second light-emitting region, and a third light-emitting region; A thin-film encapsulation layer is disposed on the light-emitting element layer; and A wavelength conversion layer is disposed on the thin-film encapsulation layer. The wavelength conversion layer includes: A dam is disposed on the thin film encapsulation layer, wherein the dam exposes the first light-emitting area, the second light-emitting area, and the third light-emitting area; A light-transmitting pattern, a first wavelength conversion pattern, and a second wavelength conversion pattern, wherein the light-transmitting pattern is superimposed on the first light-emitting area, the first wavelength conversion pattern is superimposed on the second light-emitting area, and the second wavelength conversion pattern is superimposed on the third light-emitting area; and A cover layer is disposed on the embankment, the first wavelength conversion pattern, and the second wavelength conversion pattern.

2. The display device according to claim 1, characterized in that, The embankment is in the shape of an inverted cone.

3. The display device according to claim 1, characterized in that, The display device further includes: A reflective layer is disposed on the side surface of the dike. The reflective layer is in contact with the side surface of the embankment, and also with the side surface of each of the light-transmitting pattern, the first wavelength conversion pattern, and the second wavelength conversion pattern. The first wavelength conversion pattern and the second wavelength conversion pattern are in contact with the reflective layer but not with the embankment.

4. The display device according to claim 1, characterized in that, The thickness of the light-transmitting pattern is greater than the thickness of the embankment, and The thickness of each of the first wavelength conversion pattern and the second wavelength conversion pattern is smaller than the thickness of the dam.

5. The display device according to claim 1, characterized in that, The light-transmitting pattern includes a first matrix resin and a first diffuser. The first wavelength conversion pattern includes a second matrix resin, a second scatterer, and a first wavelength shifter. The second wavelength conversion pattern includes a third matrix resin, a third scatterer, and a second wavelength shifter, and Each of the first wavelength shifter and the second wavelength shifter changes the light emitted from the light-emitting element layer into light of a different color.

6. The display device according to claim 1, characterized in that, The cover layer is disposed between the light-transmitting pattern and the thin-film encapsulation layer. The cover layer is divided into separate and spaced-apart sections on the embankment, and The light-transmitting pattern is directly set on the cover layer and does not directly contact the embankment.

7. A display device, characterized in that, The display device includes: Base; A light-emitting element layer is disposed on the substrate, wherein the light-emitting element layer includes a first light-emitting region, a second light-emitting region, and a third light-emitting region; A thin-film encapsulation layer is disposed on the light-emitting element layer; and A wavelength conversion layer is disposed on the thin-film encapsulation layer. The wavelength conversion layer includes: A dam is disposed on the thin film encapsulation layer and superimposed on the first light-emitting area, wherein the dam exposes the second light-emitting area and the third light-emitting area; A reflective layer is disposed on the side surface of the dike; A first wavelength conversion pattern and a second wavelength conversion pattern, wherein the first wavelength conversion pattern is superimposed on the second light-emitting region, and the second wavelength conversion pattern is superimposed on the third light-emitting region; and A capping layer is disposed on the embankment, the first wavelength conversion pattern, and the second wavelength conversion pattern. The dam comprises a first matrix resin and a first scatterer.

8. The display device according to claim 7, characterized in that, The reflective layer is in contact with the side surface of the embankment and with the side surface of each of the first wavelength conversion pattern and the second wavelength conversion pattern.

9. The display device according to claim 7, characterized in that, The first wavelength conversion pattern and the second wavelength conversion pattern are in contact with the reflective layer but not with the embankment.

10. An electronic device, characterized in that, The electronic device includes: Display device, providing images; and The processor provides image data signals to the display device, and The display device includes: Base; A light-emitting element layer is disposed on the substrate, wherein the light-emitting element layer includes a first light-emitting region, a second light-emitting region, and a third light-emitting region; A thin-film encapsulation layer is disposed on the light-emitting element layer; and A wavelength conversion layer is disposed on the thin-film encapsulation layer. The wavelength conversion layer includes: A dam is disposed on the thin film encapsulation layer, wherein the dam exposes the first light-emitting area, the second light-emitting area, and the third light-emitting area; A reflective layer is disposed on the side surface of the dike; A light-transmitting pattern, a first wavelength conversion pattern, and a second wavelength conversion pattern, wherein the light-transmitting pattern is superimposed on the first light-emitting area, the first wavelength conversion pattern is superimposed on the second light-emitting area, and the second wavelength conversion pattern is superimposed on the third light-emitting area; and A cover layer is disposed on the embankment, the light-transmitting pattern, the first wavelength conversion pattern, and the second wavelength conversion pattern.

Images