Silicon carbide wafer heating annealing device

Abstract

The utility model discloses a silicon carbide wafer heating annealing device belongs to annealing device related technical field, including annealing furnace, the inside of annealing furnace swing installation is placed with several groups of silicon carbide wafer's loading spare, and several groups of loading spare are between vertical equidistance distribution, the loading spare includes the upper plate body and lower plate body, the lower plate body elasticity is installed in the lower part of upper plate body, the outer surface of upper plate body is equipped with several groups of round notches, and the round notch of upper plate body swing installation has the lifting spare in, the upper plate body and lower plate body are connected through spring post elasticity, the front end swing installation of annealing furnace has the lifting cover plate, the lower part and lower plate body of lifting spare are fixedly connected, and the lifting spare includes fixed disc and lifting column, make it have lifting type auxiliary loading structure, reduce and the contact of silicon carbide wafer surface, prevent silicon carbide wafer surface pollution and physical damage, improve silicon carbide wafer yield.

Description

Technical Field

[0001] This utility model belongs to the technical field of annealing equipment, specifically a silicon carbide wafer heating and annealing device. Background Technology

[0002] The silicon carbide wafer heating and annealing apparatus is a key piece of equipment used in semiconductor manufacturing. It heat-treats silicon carbide wafers in an ultra-high temperature environment (1500°C to 1900°C) and under high vacuum or inert gas protection to repair lattice damage caused by ion implantation, activate dopant atoms, and improve the electrical performance of semiconductor devices. The core of this apparatus employs an induction heating or resistance heating system, coupled with a precise thermal shielding design and an infrared temperature measurement and control system, ensuring extreme temperature uniformity and stability. This meets the stringent process requirements of silicon carbide materials, making it an essential tool for manufacturing high-performance power semiconductor devices.

[0003] Patent document CN119852234A discloses a laser annealing device for silicon carbide wafers, including a housing, a laser heating module disposed on the inner wall of the housing, a wafer tray disposed on the inner wall of the housing via a buffer mechanism, a fixing mechanism disposed on the inner wall of the wafer tray, and a connecting mechanism disposed on the outer wall of the bottom end of the wafer tray. Existing annealing equipment has certain shortcomings when used with silicon carbide wafers. When loading silicon carbide wafers, the contact surface is relatively large, which affects the yield of silicon carbide wafers. Reducing contact with the surface of silicon carbide wafers is to minimize contamination and physical damage in order to ensure the performance and yield of the final device. Any contact may introduce metal impurities or microparticles. These contaminants will diffuse or react during the subsequent ultra-high temperature annealing process, leading to lattice defects, surface pitting, and increased interface state density, which seriously degrades electrical properties. In summary, the existing annealing equipment has a large contact surface during the loading of silicon carbide wafers, which affects the yield of silicon carbide wafers. Utility Model Content

[0004] This invention provides a silicon carbide wafer heating and annealing device, which solves the problem in the prior art where the contact surface is too large during the loading process of silicon carbide wafers, thus affecting the yield of silicon carbide wafers: A silicon carbide wafer heating and annealing apparatus includes an annealing furnace. Several sets of loading components for placing silicon carbide wafers are movably installed inside the annealing furnace. The loading components are vertically and equally spaced. Each loading component includes an upper plate and a lower plate. The lower plate is elastically installed below the upper plate. The outer surface of the upper plate has several sets of circular slots, and lifting components are movably installed within these circular slots. The upper and lower plates are elastically connected by spring columns. A lifting cover plate is movably installed at the front end of the annealing furnace, and the lower part of the lifting component is fixedly connected to the lower plate.

[0005] As a further technical solution of this utility model, the lifting component includes a fixed plate and a lifting column. The fixed plate is fixedly installed on the upper outer surface of the lifting column. The lifting column and the upper plate are movably connected. During the annealing process of silicon carbide wafers, in order to avoid contact between the silicon carbide wafers and the upper surface during placement and reduce contamination of the silicon carbide wafers, the lifting component of the loading component is used to lift and store the silicon carbide wafers. When the silicon carbide wafers are lifted, the periphery of the silicon carbide wafers is fixed by a fixing device, and the silicon carbide wafers are removed from the fixed plate, effectively reducing contact with the surface of the silicon carbide wafers and minimizing physical contact with the surface of the silicon carbide wafers.

[0006] As a further technical solution of this utility model, a docking chuck is fixedly installed on the lower outer surface of the lifting column. The lifting column and the lower plate are docked and fixed together by the docking chuck. During operation, by pressing down the upper plate, the lifting column moves upward in the circular slot of the upper plate, thereby using the lifting column to push the fixed plate out from the circular slot, so that the fixed plate moves the silicon carbide wafer out from the inside of the circular slot.

[0007] As a further technical solution of this utility model, a sealing ring is provided on the outer surface of the fixed disk. The sealing ring is an overall ring structure. The user selects a sealing ring with a corresponding diameter according to the size of the functional area at the bottom of the silicon carbide wafer. The sealing ring can avoid contact with the functional area at the bottom of the silicon carbide wafer.

[0008] As a further technical solution of this utility model, a negative pressure groove is provided in the middle of the upper end of the fixed plate. The negative pressure groove runs through the middle of the fixed plate, the lifting column and the docking chuck, so that the negative pressure groove can use the fixed plate to perform negative pressure adsorption and fixation on the lower part of the silicon carbide wafer, thereby improving its stability.

[0009] As a further technical solution of this utility model, the interior of the lower plate is a hollow structure, and the lower plate and the lifting components are connected through a negative pressure groove. The lower plate can be used to make several sets of lifting components generate a negative pressure state at the same time, so as to complete the adsorption and fixation of multiple sets of silicon carbide wafers.

[0010] As a further technical solution of this utility model, a negative pressure valve is spliced ​​and installed at the middle of the front end of the lower plate. The lower plate and the negative pressure valve are fixed together by a slot. The negative pressure valve and the lower plate are installed together, and the negative pressure valve can be used in conjunction with the pump to generate negative pressure suction inside the lower plate, thereby causing several sets of lifting components to generate a negative pressure state at the same time.

[0011] As a further technical solution of this utility model, an electric heater is installed inside the annealing furnace, and a controller is provided at the front end of the annealing furnace. The controller is used to control the electric heater and control the temperature inside the annealing furnace.

[0012] As a further technical solution of this utility model, a ventilation side plate is provided on one side of the annealing furnace, and a heat dissipation fan is provided at the upper end of the annealing furnace. After the silicon carbide wafer in the annealing furnace has completed the annealing process, the heat dissipation fan and the ventilation side plate are turned on to cool down the silicon carbide wafer.

[0013] As a further technical solution of this utility model, both sides of the upper plate are provided with strip-shaped slots, and the upper plate and the annealing furnace are fixed together by the strip-shaped slots. The annealing furnace and the lifting cover plate are movably connected by vertical sliding grooves.

[0014] The beneficial effects of this utility model are as follows: By setting up a loading component, this utility model provides a lifting auxiliary loading structure for the silicon carbide wafer heating and annealing device, improving the yield of silicon carbide wafers, reducing contact with the silicon carbide wafer surface, and preventing surface contamination and physical damage. During operation, the wafer is fixed using an edge contact method with a fixing device, placing it on the upper end of the fixing plate. The user selects a sealing ring of the corresponding diameter based on the size of the lower functional area of ​​the silicon carbide wafer, and uses the sealing ring... The sealing ring can avoid contact with the lower functional area of ​​the silicon carbide wafer, allowing the silicon carbide wafer to be housed in the circular slot of the upper plate. After the silicon carbide wafer has completed the annealing process, the upper plate is pressed down, causing the lifting column to move upward in the circular slot of the upper plate. The lifting column then pushes the fixing plate out of the circular slot, allowing the fixing plate to move the silicon carbide wafer out of the circular slot. This makes the silicon carbide wafer higher than the upper plate, facilitating the fixing device to fix the outer periphery of the silicon carbide wafer, thereby effectively reducing contact with the silicon carbide wafer. By setting up a negative pressure valve and a negative pressure tank, the use of the loading components in the silicon carbide wafer heating and annealing device is optimized, giving it a negative pressure adsorption structure. This improves the stability of loading multiple sets of silicon carbide wafers. During operation, the negative pressure valve is installed by connecting it to the lower plate. The negative pressure valve, in conjunction with the pump, generates negative pressure suction inside the lower plate, causing the fixing plates of several lifting components to simultaneously generate negative pressure. This negative pressure adsorption fixes the lower part of the silicon carbide wafers. During the annealing operation, the negative pressure valve is removed to release the negative pressure adsorption on the silicon carbide wafers. During the unloading operation, the negative pressure fixation is re-established, effectively preventing the movement of multiple sets of silicon carbide wafers during loading. Attached Figure Description

[0015] To facilitate understanding by those skilled in the art, the present invention will be further described below with reference to the accompanying drawings.

[0016] Figure 1 This is a schematic diagram of the structure of this utility model; Figure 2 This is an overall structural diagram of the loading component in this utility model; Figure 3 This is an overall structural diagram of the lifting component in this utility model.

[0017] In the diagram: 1. Annealing furnace; 2. Ventilation side plate; 3. Cooling fan; 4. Lifting cover plate; 5. Loading component; 6. Controller; 7. Vertical slide rail; 8. Upper plate; 9. Lower plate; 10. Spring column; 11. Lifting component; 12. Circular slot; 13. Negative pressure valve; 14. Fixed plate; 15. Negative pressure groove; 16. Sealing ring; 17. Lifting column; 18. Connecting chuck. Detailed Implementation

[0018] The technical solution of this utility model will be clearly and completely described below with reference to the embodiments. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0019] like Figures 1-3As shown, a silicon carbide wafer heating and annealing device includes an annealing furnace 1. Several sets of loading components 5 for placing silicon carbide wafers are movably installed on the inner side of the annealing furnace 1. The several sets of loading components 5 are distributed vertically at equal intervals. The loading component 5 includes an upper plate 8 and a lower plate 9. The lower plate 9 is elastically installed on the lower part of the upper plate 8. Several sets of circular slots 12 are provided on the outer surface of the upper plate 8, and lifting components 11 are movably installed in the circular slots 12 of the upper plate 8. The upper plate 8 and the lower plate 9 are elastically connected by spring columns 10. A lifting cover plate 4 is movably installed at the front end of the annealing furnace 1. The lower part of the lifting component 11 is fixedly connected to the lower plate 9.

[0020] The lifting component 11 includes a fixed plate 14 and a lifting column 17. The fixed plate 14 is fixedly installed on the upper outer surface of the lifting column 17. The lifting column 17 and the upper plate 8 are movably connected. During the annealing process of silicon carbide wafers, in order to avoid contact between the silicon carbide wafers and the upper surface during placement and reduce contamination of the silicon carbide wafers, the lifting component 11 of the loading component 5 is used to lift and store the silicon carbide wafers. When the silicon carbide wafers are lifted, the periphery of the silicon carbide wafers is fixed by a retainer, and the silicon carbide wafers are removed from the fixed plate 14, effectively reducing contact with the surface of the silicon carbide wafers and minimizing physical contact with the surface of the silicon carbide wafers.

[0021] A docking chuck 18 is fixedly installed on the lower outer surface of the lifting column 17. The lifting column 17 and the lower plate 9 are docked and fixed together by the docking chuck 18. During operation, by pressing down the upper plate 8, the lifting column 17 moves upward in the circular slot 12 of the upper plate 8, thereby using the lifting column 17 to push the fixed plate 14 out from the circular slot 12, so that the fixed plate 14 moves the silicon carbide wafer out from the inside of the circular slot 12.

[0022] The outer surface of the fixed plate 14 is provided with a sealing ring 16. The sealing ring 16 has an overall ring structure. The user selects the sealing ring 16 with the corresponding diameter according to the size of the functional area at the bottom of the silicon carbide wafer. The sealing ring 16 can avoid contact with the functional area at the bottom of the silicon carbide wafer.

[0023] A negative pressure groove 15 is provided in the middle of the upper end of the fixed plate 14. The negative pressure groove 15 passes through the middle of the fixed plate 14, the lifting column 17 and the docking chuck 18, so that the negative pressure groove 15 can use the fixed plate 14 to perform negative pressure adsorption and fixation on the lower part of the silicon carbide wafer, thereby improving its stability.

[0024] The lower plate 9 has a hollow structure inside, and the lower plate 9 and the lifting component 11 are connected through a negative pressure groove 15. The lower plate 9 can be used to make several sets of lifting components 11 generate a negative pressure state at the same time, so as to complete the adsorption and fixation of multiple sets of silicon carbide wafers.

[0025] A negative pressure valve 13 is spliced ​​and installed at the middle of the front end of the lower plate 9. The lower plate 9 and the negative pressure valve 13 are fixed together by a slot. The negative pressure valve 13 is installed in conjunction with the pump to generate negative pressure suction inside the lower plate 9, thereby causing several sets of lifting components 11 to generate negative pressure at the same time.

[0026] An electric heater is installed inside the annealing furnace 1. A controller 6 is provided at the front end of the annealing furnace 1. The controller 6 is used to control the electric heater and control the temperature inside the annealing furnace 1.

[0027] A ventilation side plate 2 is provided on one side of the annealing furnace 1, and a heat dissipation fan 3 is provided at the top of the annealing furnace 1. After the silicon carbide wafer in the annealing furnace 1 has completed the annealing process, the heat dissipation fan 3 and the ventilation side plate 2 are turned on to cool down the silicon carbide wafer.

[0028] Both sides of the upper plate 8 are provided with strip slots. The upper plate 8 and the annealing furnace 1 are fixed together by the strip slots. The annealing furnace 1 and the lifting cover plate 4 are movably connected by the vertical sliding groove 7.

[0029] A silicon carbide wafer heating and annealing apparatus, in use, features a loading component 5, which, through its lifting auxiliary loading structure, improves the yield of silicon carbide wafers, reduces contact with the silicon carbide wafer surface, and prevents surface contamination and physical damage. During operation, the wafer is secured using an edge contact method with a retainer, placing it on top of a fixing plate 14. The user selects a sealing ring 16 with a corresponding diameter based on the size of the lower functional area of ​​the silicon carbide wafer. The sealing ring 16 helps to prevent... The contact between the upper plate and the lower functional area of ​​the silicon carbide wafer is opened, so that the silicon carbide wafer is housed in the circular slot 12 of the upper plate 8. After the silicon carbide wafer has completed the annealing process, the upper plate 8 is pressed down, so that the lifting column 17 moves upward in the circular slot 12 of the upper plate 8. The lifting column 17 pushes the fixing plate 14 out of the circular slot 12, so that the fixing plate 14 moves the silicon carbide wafer out of the inside of the circular slot 12, making the silicon carbide wafer higher than the upper plate 8. This makes it easier for the fixture to fix the outer periphery of the silicon carbide wafer, thereby effectively reducing the contact between the fixture and the silicon carbide wafer. By setting up a negative pressure valve 13 and a negative pressure groove 15, the use of the loading component 5 is optimized when the silicon carbide wafer heating and annealing device is used, giving it a negative pressure adsorption structure and improving the stability of loading multiple sets of silicon carbide wafers. During operation, the negative pressure valve 13 is installed between the lower plate 9 and the negative pressure valve 13, in conjunction with the pump, generates a negative pressure suction inside the lower plate 9, thereby causing the fixing plates 14 of several sets of lifting components 11 to generate a negative pressure state simultaneously, and performing negative pressure adsorption and fixation on the lower part of the silicon carbide wafer. During the annealing operation, the negative pressure valve 13 is removed to release the negative pressure adsorption on the silicon carbide wafer. During the material removal operation, the negative pressure fixation is performed again, effectively preventing the movement of multiple sets of silicon carbide wafers during loading.

[0030] The above description is merely an example and illustration of the structure of this utility model. Those skilled in the art can make various modifications or additions to the specific embodiments described or use similar methods to replace them, as long as they do not deviate from the structure of the utility model or exceed the scope defined in the claims, they should all fall within the protection scope of this utility model.

Claims

1. A silicon carbide wafer heating and annealing apparatus, characterized in that, The furnace includes an annealing furnace (1), on which several sets of loading components (5) for placing silicon carbide wafers are movably installed. The loading components (5) are distributed vertically at equal intervals. Each loading component (5) includes an upper plate (8) and a lower plate (9). The lower plate (9) is elastically installed on the lower part of the upper plate (8). The outer surface of the upper plate (8) is provided with several sets of circular slots (12). Lifting components (11) are movably installed in the circular slots (12) of the upper plate (8). The upper plate (8) and the lower plate (9) are elastically connected by spring columns (10). A lifting cover plate (4) is movably installed at the front end of the annealing furnace (1). The lower part of the lifting component (11) is fixedly connected to the lower plate (9).

2. The silicon carbide wafer heating and annealing apparatus according to claim 1, characterized in that, The lifting component (11) includes a fixed plate (14) and a lifting column (17). The fixed plate (14) is fixedly installed on the upper outer surface of the lifting column (17). The lifting column (17) and the upper plate (8) are movably connected.

3. The silicon carbide wafer heating and annealing apparatus according to claim 2, characterized in that, A docking chuck (18) is fixedly installed on the lower outer surface of the lifting column (17), and the lifting column (17) and the lower plate (9) are docked and fixed together by the docking chuck (18).

4. The silicon carbide wafer heating and annealing apparatus according to claim 2, characterized in that, The outer surface of the fixed plate (14) is provided with a sealing ring (16), and the sealing ring (16) is an overall ring structure.

5. The silicon carbide wafer heating and annealing apparatus according to claim 4, characterized in that, The upper middle part of the fixed plate (14) is provided with a negative pressure groove (15), which runs through the middle of the fixed plate (14), the lifting column (17) and the docking chuck (18).

6. The silicon carbide wafer heating and annealing apparatus according to claim 1, characterized in that, The lower plate (9) has a hollow structure inside, and the lower plate (9) and the lifting component (11) are connected through a negative pressure groove (15).

7. The silicon carbide wafer heating and annealing apparatus according to claim 6, characterized in that, A negative pressure valve (13) is spliced ​​and installed at the middle of the front end of the lower plate (9), and the lower plate (9) and the negative pressure valve (13) are fixed together by a slot.

8. The silicon carbide wafer heating and annealing apparatus according to claim 1, characterized in that, An electric heater is installed inside the annealing furnace (1), and a controller (6) is provided at the front end of the annealing furnace (1).

9. The silicon carbide wafer heating and annealing apparatus according to claim 1, characterized in that, A ventilation side plate (2) is provided on one side of the annealing furnace (1), and a heat dissipation fan (3) is provided at the upper end of the annealing furnace (1).

10. The silicon carbide wafer heating and annealing apparatus according to claim 1, characterized in that, Both sides of the upper plate (8) are provided with strip slots, and the upper plate (8) and the annealing furnace (1) are fixed together by the strip slots.

Images