A laser-modified crystalline silicon cell component

Abstract

This invention provides a laser modification component for crystalline silicon solar cells, comprising: a stage on which a fixture is mounted; a first laser output mechanism, comprising a first laser, a first beam expander, a first shaping mirror, and a first output unit arranged sequentially, wherein a first laser beam output from the first laser passes sequentially through the first beam expander, the first shaping mirror, and the first output unit; and a second laser output mechanism, comprising a second laser outputting a second laser beam, and a first reflector group, a second reflector group, a second beam expander, a second shaping mirror, and a second output unit arranged sequentially along the output direction of the second laser beam. The first and second laser output mechanisms of this invention respectively output the first and second laser beams, which are then combined to modify the surface of the poly layer of the crystalline silicon solar cell, resulting in a smooth and uniform material surface and efficient removal of solvents and residues.

Description

Technical Field

[0001] This utility model relates to the field of battery processing technology, and in particular to a laser modification component for crystalline silicon batteries. Background Technology

[0002] Traditional crystalline silicon solar cell modification involves wet modification, a key process for optimizing silicon wafer performance through wet etching or surface treatment techniques. However, wet modification has the following drawbacks in practical applications:

[0003] 1. It can easily lead to a rough battery surface, affecting the conformal coating of subsequent materials, causing poor interface contact and defects, and reducing open circuit voltage and fill factor.

[0004] 2. If solvents such as hydrofluoric acid (HF) and nitric acid (HNO3) used in the wet process are not completely removed, they may remain on the silicon surface, increasing the interface resistance.

[0005] 3. Traditional wet cleaning methods are difficult to completely remove nanoscale contaminants (such as metal oxides and photoresist residues), and alternative technologies such as plasma cleaning are needed to achieve atomic-level cleanliness; otherwise, the quality of the passivation layer will be affected. Utility Model Content

[0006] To address the shortcomings of existing technologies, the purpose of this utility model is to provide a laser modification component for crystalline silicon cells. The first laser output mechanism and the second laser output mechanism respectively output a first laser beam and a second laser beam, which are spliced ​​together to modify the surface of the poly layer of the crystalline silicon cell. The processed surface is flat and uniform, and solvents and residues can be efficiently removed.

[0007] The embodiments of this utility model are achieved through the following technical solutions:

[0008] A laser modification component for crystalline silicon cells includes: a stage on which a fixture is provided; and a first laser output mechanism, including a first laser, a first beam expander, a first shaping lens, and a first output unit arranged in sequence, wherein a first laser beam output by the first laser passes through the first beam expander, the first shaping lens, and the first output unit in sequence.

[0009] The second laser output mechanism includes a second laser that outputs a second laser beam, and a first reflector group, a second reflector group, a second beam expander, a second shaping mirror, and a second output unit arranged sequentially along the output direction of the second laser beam.

[0010] According to a preferred embodiment, both the first output unit and the second output unit include a galvanometer and a field lens.

[0011] According to a preferred embodiment, the system further includes a first laser moving mechanism and a second laser moving mechanism located on the left and right sides of the platform, respectively.

[0012] The first laser moving mechanism is used to drive the first laser output mechanism to move in the X-axis direction, Y-axis direction, and Z-axis direction;

[0013] The second laser moving mechanism is used to drive the second laser output mechanism to move in the X-axis, Y-axis and Z-axis directions;

[0014] The first laser moving mechanism includes a first X-axis moving unit, a first Y-axis moving unit, and a first Z-axis moving unit;

[0015] The second laser moving mechanism includes a second X-axis moving unit, a second Y-axis moving unit, and a second Z-axis moving unit.

[0016] According to a preferred embodiment, it further includes a total Y-axis moving unit and a sliding guide rail;

[0017] The moving end of the total Y-axis moving unit is connected to the platform;

[0018] The sliding guide rails are respectively slidably engaged with the moving end of the first Y-axis moving unit and the moving end of the second Y-axis moving unit.

[0019] According to a preferred embodiment, the wavelengths of both the first laser beam and the second laser beam are in the range of 515-540nm.

[0020] A method for applying a laser-modified crystalline silicon solar cell component, characterized by comprising the following steps:

[0021] Step S10: Inspect the depth and surface area of ​​the Poly layer of the battery that needs to be laser modified;

[0022] Step S20: The first laser output mechanism and the second laser output mechanism scan the battery. The first spot formed by the first laser beam hitting the surface of the Poly layer of the battery and the second spot formed by the second laser beam hitting the surface of the Poly layer of the battery are spliced ​​together. After splicing and combining, the scanning area between two adjacent grid lines is scanned.

[0023] Step S30: The first laser output mechanism and the second laser output mechanism scan the surface of the poly layer of the battery and remove dust simultaneously, so that a modified layer is quickly formed on the surface of the poly layer of the battery.

[0024] Step S40: After the Poly layer is modified, the modified layer on the surface of the Poly layer is removed by wet process.

[0025] Step S50: After removing the modified layer from the surface of the Poly layer, observe under a microscope whether there is any residual modified layer on the surface of the Poly layer.

[0026] If residue remains, adjust the cleaning solution concentration and repeat step S40.

[0027] If there is no modified layer remaining on the surface of the Poly layer, then step S50 ends.

[0028] According to a preferred embodiment, in step S30, the first light spot and the second light spot are processed to a depth of 0.1 μm on the surface of the Poly layer of the battery, so that the surface of the Poly layer is modified within the depth range.

[0029] According to a preferred embodiment, the processing area of ​​the first light spot is larger than that of the second light spot. The first light spot and the second light spot are spliced ​​together, and the scanning area between two adjacent grid lines is scanned after splicing.

[0030] According to a preferred embodiment, the spacing between the scanning areas is between 500-800 μm, and the processing speed of the first laser beam and the second laser beam is between 50-80 m / s.

[0031] The technical solution of this utility model embodiment has at least the following advantages and beneficial effects:

[0032] The first laser output mechanism and the second laser output mechanism of this utility model output a first laser beam and a second laser beam respectively, forming a first light spot and a second light spot. These light spots are then spliced ​​together to modify the surface of the poly layer of the crystalline silicon battery, making the poly surface of the battery smooth and uniform, and efficiently removing solvents and residues. Attached Figure Description

[0033] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this utility model and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0034] Figure 1 This is a schematic diagram of the structure of the laser-modified crystalline silicon solar cell component provided in an embodiment of the present invention;

[0035] Figure 2 A schematic diagram of the optical path system structure of the first laser output mechanism provided in this embodiment of the utility model;

[0036] Figure 3 A schematic diagram of the optical path system structure of the second laser output mechanism provided in an embodiment of this utility model.

[0037] Icons: 1. Stage; 2. Fixture; 3. First laser; 4. First beam expander; 5. Galvanometer; 6. Field mirror; 7. Second laser; 8. First mirror group; 9. Second mirror group; 10. Second beam expander; 11. Second shaping mirror; 12. First X-axis moving unit; 13. First Y-axis moving unit; 14. First Z-axis moving unit; 15. Second X-axis moving unit; 16. Second Y-axis moving unit; 17. Second Z-axis moving unit; 18. Total Y-axis moving unit; 19. Sliding guide rail; 20. First shaping mirror. Detailed Implementation

[0038] To better understand and implement this invention, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings.

[0039] In the description of this utility model, it should be noted that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", and "outer" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0040] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.

[0041] Example

[0042] Please refer to Figures 1 to 3 A laser modification component for crystalline silicon solar cells includes: a stage 1 on which a clamp 2 is disposed; a first laser output mechanism including a first laser 3, a first beam expander 4, a first shaping mirror 20 and a first output unit arranged in sequence, wherein a first laser beam output by the first laser 3 passes through the first beam expander 4, the first shaping mirror 20 and the first output unit in sequence; and a second laser output mechanism including a second laser 7 that outputs a second laser beam, and a first reflector group 8, a second reflector group 9, a second beam expander 10, a second shaping mirror 11 and a second output unit arranged in sequence along the output direction of the second laser beam.

[0043] According to a preferred embodiment, both the first output unit and the second output unit include a galvanometer 5 and a field mirror 6.

[0044] According to a preferred embodiment, it further includes a first laser moving mechanism and a second laser moving mechanism located on the left and right sides of the platform 1, respectively.

[0045] The first laser moving mechanism is used to drive the first laser output mechanism to move in the X-axis direction, Y-axis direction, and Z-axis direction;

[0046] The second laser moving mechanism is used to drive the second laser output mechanism to move in the X-axis, Y-axis and Z-axis directions;

[0047] The first laser moving mechanism includes a first X-axis moving unit 12, a first Y-axis moving unit 13, and a first Z-axis moving unit 14;

[0048] The second laser moving mechanism includes a second X-axis moving unit 15, a second Y-axis moving unit 16, and a second Z-axis moving unit 17.

[0049] According to a preferred embodiment, it also includes a total Y-axis moving unit 18 and a sliding guide rail 19;

[0050] The moving end of the total Y-axis moving unit 18 is connected to the platform 1;

[0051] The sliding guide rail 19 is slidably engaged with the moving end of the first Y-axis moving unit 13 and the moving end of the second Y-axis moving unit 16, respectively.

[0052] According to a preferred embodiment, the wavelengths of both the first laser beam and the second laser beam are in the range of 515-540nm.

[0053] A method for applying a laser-modified crystalline silicon solar cell component, characterized by comprising the following steps:

[0054] Step S10: Inspect the depth and surface area of ​​the Poly layer of the battery that needs to be laser modified;

[0055] Step S20: The first laser output mechanism and the second laser output mechanism scan the battery. The first spot formed by the first laser beam hitting the surface of the Poly layer of the battery and the second spot formed by the second laser beam hitting the surface of the Poly layer of the battery are spliced ​​together. After splicing and combining, the scanning area between two adjacent grid lines is scanned.

[0056] Step S30: The first laser output mechanism and the second laser output mechanism scan the surface of the poly layer of the battery and remove dust simultaneously, so that a modified layer is quickly formed on the surface of the poly layer of the battery.

[0057] Step S40: After the Poly layer is modified, the modified layer on the surface of the Poly layer is removed by wet process. Before wet removal of the modified layer on the surface of the Poly layer, the first laser 3 and the second laser 7 are preheated at a temperature of 22-26 degrees Celsius for 30 minutes.

[0058] Step S50: After removing the modified layer from the surface of the Poly layer, observe under a microscope whether there is any residual modified layer on the surface of the Poly layer.

[0059] If residue remains, adjust the cleaning solution concentration and repeat step S40.

[0060] If there is no modified layer remaining on the surface of the Poly layer, then step S50 ends.

[0061] According to a preferred embodiment, in step S30, the first light spot and the second light spot are processed to a depth of 0.1 μm on the surface of the Poly layer of the battery, so that the surface of the Poly layer is modified within the depth range.

[0062] According to a preferred embodiment, the processing area of ​​the first light spot is larger than that of the second light spot. The first light spot and the second light spot are spliced ​​together, and the scanning area between two adjacent grid lines is scanned after splicing.

[0063] According to a preferred embodiment, the spacing between the scanning areas is between 500-800 μm, and the processing speeds of the first and second laser beams are between 50-80 m / s. By adjusting the processing speeds of the first and second laser beams to between 50-80 m / s, damage to the modified Poly layer can be minimized.

[0064] The working principle of this utility model:

[0065] In this embodiment, the surface of the battery material can be modified. Utilizing the high energy density of lasers, the first and second laser beams rapidly process the surface of the poly layer substrate of the crystalline silicon battery, forming a modified layer on the poly surface. Under rapid thermal action, the crystalline silicon battery substrate experiences minimal thermal impact and exhibits no deformation. This embodiment achieves high overall uniformity, good results, high yield, and strong equipment stability in the modification of the battery cells. In this embodiment, the first shaping mirror 20 of the first laser output mechanism and the second shaping mirror 11 of the second laser output mechanism are both close to the galvanometer 5, resulting in good shaping effect, stable beam, and good processing effect for the first and second laser spots.

[0066] In this embodiment, the processing material is a crystalline silicon solar cell. Both the first laser 3 and the second laser 7 can be 230W green picosecond lasers. The frequency of this green picosecond laser can be selected as 500kHz, and its single-pulse energy can reach 465uJ. The first shaping mirror 20 and the second shaping mirror 11 are flat-top beam shapers, or simply beam shapers. A beam shaper is one of the diffraction elements (DOEs), and its function is to obtain a flat-top beam spot with uniform energy distribution, steep boundaries, and a specific shape. The beam spot shape can be circular, rectangular, square, straight, elliptical, etc. This process shapes it into a square. When the first or second laser beam passes through the flat-top beam shaper, it can uniformly process the energy distribution of the beam spot, achieving the effect of a flat-top beam. It is important to emphasize that the flat-top beam spot is not obtained on the focal plane of the focusing lens, but on a plane at a certain defocusing range from the focal plane. In this embodiment, the field lens 6 can be selected as an F429 green light field lens 6, with a wavelength of 515-540nm and a range of 290*290mm. In this embodiment, the wavelengths of the first and second laser beams are in the 266-1080nm band, especially in the 308-570nm band, which can meet the process requirements. Further, in step S20 or step S30, the crystalline silicon cell can be processed at low temperature. The stage 1 can be equipped with a cooling mechanism, which cools the stage 1 by inputting and outputting cooling water through pipes. This can reduce the risk of thermal damage to the crystalline silicon cell caused by high temperature diffusion. In step S20, the line between two adjacent grid lines is the baseline for laser scanning processing, which can be regarded as the boundary line of the area to be processed. Figure 2 , Figure 3 middle, Figure 2 The arrow in the image indicates the direction of the first laser beam emission. Figure 3 The arrow in the diagram indicates the emission direction of the second laser beam. A can be represented as the first laser spot and B as the second laser spot. Figure 1The horizontal direction is the Y-axis. The stage 1 can move horizontally left and right through the main Y-axis moving unit 18. The first Y-axis moving unit 13 can drive the first laser output mechanism to move horizontally left and right, and the second Y-axis moving unit 16 can drive the second laser output mechanism to move horizontally left and right. The moving end of the first Y-axis moving unit 13 can slide along the sliding guide rail 19, and the moving end of the second Y-axis moving unit 16 can slide along the sliding guide rail 19. Both the moving ends of the first Y-axis moving unit 13 and the moving ends of the second Y-axis moving unit 16 can be equipped with rollers or sliders that move in conjunction with the sliding guide rail 19 to ensure that they move with the moving end of the second Y-axis moving unit 16 under the same linear accuracy. Similarly, the first X-axis moving unit 12 can drive the first laser output mechanism to move horizontally back and forth, and the second X-axis moving unit 15 can drive the second laser output mechanism to move horizontally back and forth. Similarly, the first Y-axis moving unit 13 can drive the first laser output mechanism to move vertically up and down, and the second Y-axis moving unit 16 can drive the second laser output mechanism to move vertically up and down. In this embodiment, the principle of laser modification treatment, i.e., laser processing, is as follows: the first and second light spots transform the surface material (amorphous silicon material) of the Poly layer of the crystalline silicon cell from amorphous silicon material to microcrystalline silicon material, and finally remove it by chemical wet process. The modification treatment of the surface material of the Poly layer substrate of the crystalline silicon cell has high processing efficiency and good effect.

[0067] The technical means disclosed in this utility model are not limited to those disclosed in the above embodiments, but also include technical solutions composed of any combination of the above technical features. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principle of this utility model, and these improvements and modifications are also considered within the scope of protection of this utility model.

Claims

1. A crystalline silicon cell laser modification assembly, characterized by, include: A platform, on which a clamp is provided; The first laser output mechanism includes a first laser, a first beam expander, a first shaping lens, and a first output unit arranged in sequence. The first laser beam output by the first laser passes through the first beam expander, the first shaping lens, and the first output unit in sequence. The second laser output mechanism includes a second laser that outputs a second laser beam, and a first reflector group, a second reflector group, a second beam expander, a second shaping mirror, and a second output unit arranged sequentially along the output direction of the second laser beam.

2. The laser-modified crystalline silicon solar cell component according to claim 1, characterized in that, Both the first output unit and the second output unit include a galvanometer and a field mirror.

3. The laser-modified crystalline silicon solar cell component according to claim 2, characterized in that, It also includes a first laser moving mechanism and a second laser moving mechanism located on the left and right sides of the platform, respectively. The first laser moving mechanism is used to drive the first laser output mechanism to move in the X-axis direction, Y-axis direction, and Z-axis direction; The second laser moving mechanism is used to drive the second laser output mechanism to move in the X-axis, Y-axis and Z-axis directions; The first laser moving mechanism includes a first X-axis moving unit, a first Y-axis moving unit, and a first Z-axis moving unit; The second laser moving mechanism includes a second X-axis moving unit, a second Y-axis moving unit, and a second Z-axis moving unit.

4. The laser-modified crystalline silicon solar cell component according to claim 3, characterized in that, It also includes a total Y-axis moving unit and a sliding guide rail; The moving end of the total Y-axis moving unit is connected to the platform; The sliding guide rails are respectively in movable cooperation with the moving end of the first Y-axis moving unit and the moving end of the second Y-axis moving unit.

5. The laser-modified crystalline silicon solar cell component according to claim 1, characterized in that, Both the first and second laser beams have wavelengths in the range of 515-540nm.

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