High and low temperature impact resistant metallized thin films
By employing a multi-layered structure design and material selection, the stability of metallized thin films under high and low temperature shocks was solved, thereby extending the high and low temperature resistance and service life of the films.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- NINGGUO ZHICHEN ELECTRONICS CO LTD
- Filing Date
- 2025-07-03
- Publication Date
- 2026-07-31
AI Technical Summary
Existing metallized thin films are prone to problems such as metal layer peeling and film cracking under high and low temperature shocks, resulting in shortened service life and unstable performance.
The film employs a multi-layer structure design, including a base layer, first and second high-temperature resistant layers, a buffer layer, a metallization layer, and an anti-oxidation layer, with an interface layer between each layer. Materials such as polypropylene, polyimide, silicone rubber, aluminum, and silica are used to improve the film's high and low temperature resistance through the synergistic effect of each layer.
It improves the stability of the film under high and low temperature environments, prevents metal layer delamination and film cracking, extends service life, and ensures performance stability and reliability.
Smart Images
Figure CN224576319U_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of metallized thin film technology, and particularly relates to metallized thin films resistant to high and low temperature impacts. Background Technology
[0002] High and low temperature shock resistant metallized films are electronic materials with special properties, widely used in power systems, electronics, and other fields. They are used to manufacture high-voltage capacitors and pulse capacitors, stabilizing voltage and improving power quality in the storage, transmission, and distribution of electrical energy in power grids, ensuring reliable operation of power systems under various environmental conditions. In various electronic products such as mobile phones, computers, and tablets, they serve as key materials for capacitors, performing functions such as filtering, coupling, and bypassing, ensuring stable performance of electronic products under different operating environments.
[0003] Existing metallized films are prone to problems such as metal layer delamination and film cracking under high and low temperature shocks, resulting in shortened service life and unstable performance. To address this, we propose a metallized film resistant to high and low temperature shocks. Utility Model Content
[0004] This utility model addresses the problems in the prior art by proposing the following technical solution:
[0005] A high and low temperature impact resistant metallized film includes a base layer, a first high temperature resistant layer on top of the base layer, a first buffer layer on top of the first high temperature resistant layer, a metallized layer on top of the first buffer layer, a second buffer layer on top of the metallized layer, a second high temperature resistant layer on top of the second buffer layer, an anti-oxidation layer on the bottom of the base layer, and an interface layer between the base layer and the first high temperature resistant layer, between the first buffer layer and the metallized layer, between the metallized layer and the second buffer layer, and between the second buffer layer and the second high temperature resistant layer.
[0006] As a preferred embodiment of the above technical solution, the base layer is made of polypropylene and the thickness of the base layer is 5-10 μm.
[0007] As a preferred embodiment of the above technical solution, both the first high-temperature resistant layer and the second high-temperature resistant layer are made of polyimide, and the thickness of both the first high-temperature resistant layer and the second high-temperature resistant layer is 3-5μm.
[0008] As a preferred embodiment of the above technical solution, both the first buffer layer and the second buffer layer are made of silicone rubber, and the thickness of both the first buffer layer and the second buffer layer is 2-4 μm.
[0009] As a preferred embodiment of the above technical solution, the metallization layer is deposited on top of the first buffer layer and is made of aluminum, and the thickness of the metallization layer is 0.1-0.5μm.
[0010] As a preferred embodiment of the above technical solution, the antioxidant layer is made of silicon dioxide and the thickness of the antioxidant layer is 1-2 μm.
[0011] As a preferred embodiment of the above technical solution, the interface layer is made of acrylate copolymer and the thickness of the interface layer is 0.5-1μm.
[0012] The beneficial effects of this utility model are as follows:
[0013] 1. By setting a first high-temperature resistant layer and a second high-temperature resistant layer, this utility model can improve the stability of the film in high and low temperature environments and avoid the performance degradation of the film due to temperature changes. The setting of the first buffer layer and the second buffer layer can effectively absorb the stress generated by high and low temperature impacts, reduce stress concentration between the metallization layer and other layers, prevent the metal layer from falling off and the film from cracking. The setting of the anti-oxidation layer can prevent the bottom of the base layer from being oxidized and corroded, and extend the service life of the film. Attached Figure Description
[0014] Figure 1 The diagram shown is a schematic representation of the high and low temperature impact resistant metallized film in the embodiment.
[0015] Figure 2 The diagram shown is a structural schematic of the interface layer in the embodiment.
[0016] Explanation of reference numerals in the attached figures:
[0017] 10. Base layer; 11. First high-temperature resistant layer; 12. First buffer layer; 13. Metallized layer; 14. Second buffer layer; 15. Second high-temperature resistant layer; 16. Antioxidant layer; 17. Interface layer. Detailed Implementation
[0018] To make the objectives, technical solutions, and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below in conjunction with the embodiments.
[0019] Example
[0020] like Figure 1 and Figure 2As shown, the high and low temperature impact resistant metallized film includes a base layer 10, a first high temperature resistant layer 11 on the top of the base layer 10, a first buffer layer 12 on the top of the first high temperature resistant layer 11, a metallized layer 13 on the top of the first buffer layer 12, a second buffer layer 14 on the top of the metallized layer 13, a second high temperature resistant layer 15 on the top of the second buffer layer 14, an anti-oxidation layer 16 on the bottom of the base layer 10, and an interface layer 17 between the base layer 10 and the first high temperature resistant layer 11, between the first buffer layer 12 and the metallized layer 13, between the metallized layer 13 and the second buffer layer 14, and between the second buffer layer 14 and the second high temperature resistant layer 15.
[0021] It should be noted that the base layer 10 serves as a basic support layer, providing a stable structure. The first high-temperature resistant layer 11 and the second high-temperature resistant layer 15 can withstand high and low temperature environments, maintaining the stability of the film. The first buffer layer 12 and the second buffer layer 14 absorb stress during high and low temperature impacts, reducing stress concentration between layers. The metallization layer 13 realizes the electrical properties of the film. The anti-oxidation layer 16 prevents oxidation and corrosion at the bottom of the base layer 10. Through the synergistic effect of each layer, the high and low temperature impact resistance and service life of the metallized film are improved.
[0022] like Figure 1 As shown, the base layer 10 is made of polypropylene and has a thickness of 5-10 μm.
[0023] Specifically, polypropylene has good mechanical and insulating properties, and as the base layer 10, it can provide a stable support skeleton for the entire film structure. The thickness setting of 5-10μm ensures the support strength without excessively increasing the overall thickness of the film, thus balancing the thinness and structural stability of the film.
[0024] like Figure 1 As shown, both the first high-temperature resistant layer 11 and the second high-temperature resistant layer 15 are made of polyimide, and the thickness of both the first high-temperature resistant layer 11 and the second high-temperature resistant layer 15 is 3-5 μm.
[0025] Specifically, polyimide has excellent high and low temperature resistance. The first high temperature resistant layer 11 and the second high temperature resistant layer 15 are located on the upper part of the film and near the upper part of the base layer 10, respectively. They can effectively block the influence of external high and low temperatures on the internal structure of the film. The thickness of 3-5μm ensures good high and low temperature resistance while avoiding excessive use of materials.
[0026] like Figure 1 As shown, both the first buffer layer 12 and the second buffer layer 14 are made of silicone rubber, and the thickness of both the first buffer layer 12 and the second buffer layer 14 is 2-4 μm.
[0027] Specifically, silicone rubber possesses excellent elasticity and flexibility. The first buffer layer 12 is located between the first high-temperature resistant layer 11 and the metallized layer 13, and the second buffer layer 14 is located between the metallized layer 13 and the second high-temperature resistant layer 15. Under high and low temperature impacts, they can absorb the generated stress through their own elastic deformation, reducing stress concentration between the metallized layer 13 and other layers. A thickness of 2-4 μm is sufficient to achieve effective buffering without adversely affecting the overall performance of the film.
[0028] like Figure 1 As shown, the metallization layer 13 is deposited on top of the first buffer layer 12 and is made of aluminum. The thickness of the metallization layer 13 is 0.1-0.5 μm.
[0029] Specifically, aluminum has good electrical conductivity, and the vapor deposition method allows the metallization layer 13 to be uniformly attached to the first buffer layer 12, achieving the conductive function of the thin film. The ultra-thin thickness of 0.1-0.5μm ensures conductivity while reducing the use of metal materials and minimizing the impact on the flexibility of the thin film.
[0030] like Figure 1 As shown, the antioxidant layer 16 is made of silicon dioxide and has a thickness of 1-2 μm.
[0031] It should be noted that silica is chemically stable and not easily oxidized. When it covers the bottom of the substrate 10, it can effectively block external corrosive substances such as oxygen from contacting the substrate 10, preventing oxidation and corrosion of the substrate 10. A thickness of 1-2 μm can form a reliable protective barrier and extend the service life of the film.
[0032] like Figure 2 As shown, the interface layer 17 is made of acrylate copolymer and has a thickness of 0.5-1 μm.
[0033] It should be noted that acrylate copolymers have good bonding properties. When placed between adjacent layers, they can enhance the bonding force between adjacent layers, reduce the risk of interlayer separation, and ensure the integrity and stability of the entire film structure. A thickness of 0.5-1μm can ensure the bonding effect without increasing excessive interfacial resistance.
[0034] The above embodiments are only used to illustrate the technical solution of this utility model, and are not intended to limit it.
Claims
1. A high and low temperature shock resistant metallized film comprising a base layer (10) characterized in that: The base layer (10) is provided with a first high temperature resistant layer (11) on top, a first buffer layer (12) on top of the first high temperature resistant layer (11), a metallization layer (13) on top of the first buffer layer (12), a second buffer layer (14) on top of the metallization layer (13), a second high temperature resistant layer (15) on top of the second buffer layer (14), an anti-oxidation layer (16) on the bottom of the base layer (10), and an interface layer (17) is provided between the base layer (10) and the first high temperature resistant layer (11), between the first buffer layer (12) and the metallization layer (13), between the metallization layer (13) and the second buffer layer (14), and between the second buffer layer (14) and the second high temperature resistant layer (15).
2. The high and low temperature impact resistant metallized film according to claim 1, wherein, The base layer (10) is made of polypropylene and has a thickness of 5-10 μm.
3. The high and low temperature impact resistant metallized film of claim 1, wherein, The first high-temperature resistant layer (11) and the second high-temperature resistant layer (15) are both made of polyimide, and the thickness of the first high-temperature resistant layer (11) and the second high-temperature resistant layer (15) is 3-5 μm.
4. The high and low temperature impact resistant metallized film of claim 1, wherein, The first buffer layer (12) and the second buffer layer (14) are both made of silicone rubber, and the thickness of the first buffer layer (12) and the second buffer layer (14) is 2-4 μm.
5. The high and low temperature impact resistant metallized film of claim 1, wherein, The metallization layer (13) is deposited on top of the first buffer layer (12) by vapor deposition and is made of aluminum. The thickness of the metallization layer (13) is 0.1-0.5 μm.
6. The high and low temperature shock resistant metallized film of claim 1, wherein, The antioxidant layer (16) is made of silicon dioxide and has a thickness of 1-2 μm.
7. The high and low temperature impact resistant metallized film of claim 1, wherein, The interface layer (17) is made of acrylate copolymer and has a thickness of 0.5-1 μm.