A reactor for a CVD apparatus and a semiconductor processing apparatus

Abstract

This application discloses a reactor for CVD equipment and a semiconductor processing device. The reactor includes: a reaction chamber with an inlet and an outlet communicating with the internal space on its side wall; a base disposed in the reaction chamber, the base having a bearing surface; and a conduit disposed in the reaction chamber, connecting the inlet and outlet, the conduit having a first opening in its wall, the bearing surface of the base being exposed in the conduit through the first opening, wherein a first end of the conduit extends into the inlet. The design of this application can improve the film-forming environment of the reactor.

Description

Technical Field

[0001] This application relates to the field of semiconductor equipment technology, and in particular to a reactor for CVD equipment and a semiconductor processing device. Background Technology

[0002] In existing technologies, semiconductor film deposition equipment often incorporates dimensional redundancy in its component design due to the assembly requirements of multiple components within the cavity. This inevitably results in assembly gaps between these components after assembly, which can cause minor airflow disturbances during the film deposition process. In semiconductor film deposition, especially during doping, even minute airflow disturbances can lead to poor doping uniformity in the final film, failing to meet expectations and ultimately affecting the performance of the semiconductor product. Therefore, further optimization of key components in semiconductor film deposition equipment is necessary. Utility Model Content

[0003] This application provides a reactor for CVD equipment and a semiconductor processing device, which can improve the film formation environment of the reactor.

[0004] The first aspect of this application provides a reactor for a CVD equipment, the reactor comprising: a reaction chamber, the side wall of which is provided with an air inlet and an air outlet communicating with the internal space of the reaction chamber; a base disposed in the reaction chamber, the base having a bearing surface; and a conduit disposed in the reaction chamber, connecting the air inlet and the air outlet, the conduit having a first opening in its wall, the bearing surface of the base being exposed in the conduit through the first opening, wherein a first end of the conduit extends into the air inlet.

[0005] In one embodiment, the reaction chamber includes a base and a top cover detachably disposed on the base, wherein the base is provided with an air inlet and an air outlet; the conduit includes a first tube section, one end of the first tube section extends into the air inlet as the first end of the conduit, the upstream and downstream are defined by the airflow direction, the other end of the first tube section is located downstream of the base and spaced apart from the air outlet, and the first opening is disposed in the first tube section.

[0006] In one embodiment, the conduit further includes a second tube portion and a third tube portion, the second tube portion being located between and communicating with the first tube portion and the third tube portion, the third tube portion extending into the gas outlet and being at least partially located inside the reaction chamber.

[0007] In one embodiment, the first tube is further provided with a second opening opposite to the first opening. The reactor further includes a heating element disposed in the reaction chamber and located on one side of the bearing surface of the base and spaced apart from the base. The heating element includes a first surface, which is disposed opposite to the bearing surface of the base through the second opening. The first surface is flush with the inner wall of the first tube.

[0008] In one embodiment, the orthographic projection of the base onto the heated member lies within the heated member.

[0009] In one embodiment, the sidewall of the second opening is provided with a first step portion, and the heated member is mounted on the first step portion.

[0010] In one embodiment, the reactor further includes: a first insulation element, which is at least partially located in the space enclosed by the base, the conduit, and the seat; and a second insulation element, which is at least partially located in the space enclosed by the heated element, the conduit, the seat, and the top cover, and cooperates with the first insulation element to cover the space enclosed by the first tube, the base, and the heated element.

[0011] In one embodiment, the reactor further includes: a protective cover disposed on the first insulation member to prevent the first insulation member from being exposed relative to the base. The protective cover includes: a cover body located between the base and the first insulation member; a connecting portion disposed around the cover body and connected to the cover body, wherein the sidewall of the first opening is provided with a second step portion, and the connecting portion is mounted on the second step portion.

[0012] In one embodiment, the reactor further includes a heating assembly for heating the heated element and / or the base, the heating assembly being located outside the reaction chamber, the heating assembly including an induction coil and a power source for supplying current to the induction coil, the induction coil being mounted on the upper cover.

[0013] A second aspect of this application also provides a semiconductor processing apparatus, the semiconductor processing apparatus comprising a reactor as described in any of the above embodiments.

[0014] The advantages of this application, which differ from the prior art, are as follows: The reactor of this application includes a reaction chamber, a base, and a conduit. The side wall of the reaction chamber is provided with an inlet and an outlet that communicate with the internal space. The conduit connects the inlet and the outlet. The first end of the conduit extends into the inlet. When the reaction gas enters the inlet, it can be directly guided to the bearing surface of the base without being disturbed by the assembly gaps between components. Instead, it flows to the bearing surface of the base in a stable laminar flow form. This enhances the controllability of the substrate film formation process and can help improve the uniformity of film formation. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort, wherein:

[0016] Figure 1 This is a schematic diagram of one embodiment of the reactor of this application;

[0017] Figure 2 yes Figure 1 A schematic diagram of one embodiment of the disassembly of the central cavity;

[0018] Figure 3 yes Figure 1 An enlarged schematic diagram of one embodiment of the central region P;

[0019] Figure 4 yes Figure 1 An enlarged schematic diagram of one embodiment of the central region Q.

[0020] Label Explanation:

[0021] 10-Reactor; 100-Reaction chamber; 110-Base; 120-Top cover; 200-Base; 300-Conduit; 310-First conduit; 320-Second conduit; 330-Third conduit; 400-Heating component; 510-First insulation component; 520-Second insulation component; 600-Support component; 700-Protective cover; 710-Cover body; 720-Connecting part; 800-Heating assembly; 810-Induction coil; 820-Power supply; A-Air inlet; B-Air outlet; X-First direction; S1-First end; K1-First opening; K2-Second opening; S-First surface. Detailed Implementation

[0022] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0023] In response to the problems in the background technology, the applicant's research found that the film quality is also closely related to the film formation environment. The shaping of the film formation environment is often related to the specific design of the reactor in the semiconductor film formation equipment, and different reactor designs often determine the performance of the final semiconductor product.

[0024] See Figure 1 and Figure 2 , Figure 1 This is a schematic diagram of one embodiment of the reactor of this application. Figure 2 yes Figure 1 A schematic diagram of one embodiment of the disassembly of the central cavity. This application provides a reactor 10 for a CVD (Chemical Vapor Deposition) device, the reactor 10 including a reaction chamber 100, a base 200 and a conduit 300.

[0025] The side wall of the reaction chamber 100 is provided with an air inlet A and an air outlet B that communicate with the internal space of the reaction chamber 100.

[0026] Specifically, the reaction chamber 100 is a hollow shell structure, with the outer shell enclosing the internal space, which is used for the film formation reaction of semiconductor products. The side wall of the reaction chamber 100 has an inlet A, which is connected to an external air intake pipe (not shown), allowing the input of reaction gas. The reaction gas enters the internal space of the reaction chamber 100 through inlet A to undergo the reaction. The side wall of the reaction chamber 100 also has an outlet B, which is connected to an external exhaust pipe (not shown) to discharge residual gas after the reaction, thus ensuring the normal progress of the reaction.

[0027] The base 200 is disposed in the reaction chamber 100, and the base 200 is provided with a bearing surface.

[0028] Specifically, generally speaking, before the reaction, a substrate or wafer, for example, needs to be placed in the reaction chamber 100, and then the reaction gas is introduced into the gas inlet A. The bearing surface of the base 200 is used to support the substrate or wafer. The bearing surface faces upward to support the substrate or wafer. Generally speaking, the size of the bearing surface should be larger than the size of the substrate or wafer to achieve a better supporting effect.

[0029] The conduit 300 is installed in the reaction chamber 100. The conduit 300 connects the air inlet A and the air outlet B. The conduit 300 has a first opening K1 in its wall. The bearing surface of the base 200 is exposed in the conduit 300 through the first opening K1. The first end S1 of the conduit 300 extends into the air inlet A.

[0030] Specifically, conduit 300 connects inlet A and outlet B. Conduit 300 is used to guide the reaction gas entering from inlet A to outlet B. On the one hand, the guiding design of conduit 300 shortens the time for the reaction gas to travel from inlet A to outlet B. Residual gas after the reaction can be quickly discharged from reaction chamber 100 through outlet B, preventing the residual gas concentration from becoming too high and diluting the normal reaction gas concentration, thus reducing the film formation rate and affecting film quality. On the other hand, conduit 300... The internal space of the reaction chamber 100 is divided to prevent the reactive gas from entering the internal space outside the conduit 300. This avoids the reactive gas from forming a film and accumulating on the inner wall of the reaction chamber 100. If the film accumulates on the inner wall of the reaction chamber 100, it needs to be removed, which is a relatively large workload. However, the design of the conduit 300 in this application confines the reactive gas inside the conduit 300. The reactive gas will only react inside the conduit 300 and will only deposit on the inner wall of the conduit 300. The conduit 300 is smaller in size, making the film removal work easier.

[0031] Furthermore, the inner wall of the conduit 300 has a first opening K1, through which the bearing surface of the base 200 is exposed. This means the bearing surface faces the interior of the conduit 300. Therefore, when the reactive gas flows through the conduit 300, it forms a film on the surface of the substrate or wafer on the base 200. Moreover, the first end S1 of the conduit 300 extends further into the inlet A. This means that the reactive gas enters the interior of the conduit 300 directly after entering the inlet A, rather than first entering the interior space of the reaction chamber 100 and then the conduit 300. The advantage of this design is that when the reactive gas begins to enter the inlet A, it is not interfered with by the assembly gaps between components within the reaction chamber, thus avoiding disturbances to the gas flow field caused by these gaps. For example, if the first end S1 does not extend into the inlet A, and the reactive gas enters the internal space of the reaction chamber 100 before entering the conduit 300, the purge gas inside the reaction chamber 100, or some assembly gaps or differences in assembly height between components, will interfere with the flow field of the reactive gas. Ultimately, the reactive gas cannot reach the surface of the substrate 200 in the desired distribution, resulting in a decreased controllability of the film formation rate or the doping rate of the film layer, leading to a reduction in film uniformity. However, the design of this application, by extending the first end S1 of the conduit 300 into the inlet A, ensures that no other gas or assembly gaps of other components disturb the reactive gas before it reaches the substrate 200. The reactive gas flows towards the substrate 200 in a laminar flow manner, allowing for better film formation and higher controllability of the film formation rate or doping concentration distribution. It can be seen that the design of this application improves the film formation environment of the reactor 10 and enhances the performance of the semiconductor product.

[0032] In one embodiment, the reaction chamber 100 includes a base 110 and a top cover 120 detachably disposed on the base 110, wherein the base 110 is provided with an air inlet A and an air outlet B.

[0033] Specifically, the base 110 is a shell with a groove on the side facing the top cover 120, and the top cover 120 is a shell with a groove on the side facing the base 110. When the top cover 120 is placed on the base 110, the internal space of the reaction chamber 100 is obtained. The top cover 120 can also be removed from the base 110, allowing for external maintenance of the interior of the reaction chamber 100. Both the air inlet A and the air outlet B are located on the base 110, making it easier to maintain them after removing the top cover 120. This design is a top-removal design, facilitating overhead observation by maintenance personnel and making maintenance more convenient.

[0034] The conduit 300 includes a first tube section 310. One end of the first tube section 310 extends into the air inlet A as the first end S1 of the conduit 300. The upstream and downstream are defined by the airflow direction. The other end of the first tube section 310 is located downstream of the base 200 and is spaced apart from the air outlet B. The first opening K1 is provided in the first tube section 310.

[0035] Specifically, one end of the first tube 310 extends into the air inlet A, and the first opening K1 is located in the first tube 310. As mentioned above, this design ensures that after the reacting gas enters the air inlet A and before reaching the base 200, no other gas or assembly gaps of other components will disturb the reacting gas. Furthermore, the other end of the first tube 310 is not directly connected to the air outlet B, thus ensuring that there is a certain space between the first tube 310 and the air outlet B. This allows the first tube 310 to be moved along the air inlet direction when it is removed, so that the first tube 310 is entirely within the internal space of the reaction chamber 100, thereby completing the separation of the first tube 310 from the base 110. Optionally, the length of the first tube 310 in the first direction X is less than the opening length of the base 110 in the first direction X, where the first direction X is the air inlet direction of the air inlet A. This design allows the first end S1 of the first tube 310 to be separated from the air inlet A, and then the first tube 310 can be further removed from the base 110 by moving it upwards.

[0036] Of course, in some other embodiments, the reaction chamber includes a base and a top cover that is detachably mounted on the base. In this case, the air inlet and outlet may not all be located on the base. Such a design makes the maintenance of the air inlet, outlet and conduit quite inconvenient.

[0037] In one embodiment, the height of the bearing surface of the base 200 is not higher than the height of the inner wall of the first tube 310, so as to avoid the base 200 blocking the reaction gas and thus disturbing the reaction gas.

[0038] In one embodiment, the conduit 300 further includes a second tube portion 320 and a third tube portion 330, the second tube portion 320 being located between and communicating with the first tube portion 310 and the third tube portion 330, and the third tube portion 330 extending into the gas outlet B and being at least partially located inside the reaction chamber 100.

[0039] Specifically, a portion of the third tube 330 extends into the outlet B, similar to how the first end S1 of the first tube 310 extends into the inlet A. The third tube 330 shields the area near the inner wall of the base 110, and further connects the first tube 310 and the third tube 330 through the second tube 320. This ensures that the reactant gas or residual gas is confined inside the conduit 300 along the entire gas flow path from the inlet A to the outlet B, preventing the reactant gas or residual gas from depositing on the inner wall of the reaction chamber 100 after the reaction, thus preventing contamination of the reaction chamber 100. The conduit 300 described in this application ensures that the parasitic reaction during the film formation process mainly occurs on the inner wall of the conduit 300, requiring only maintenance of the conduit 300 later. It also helps to stabilize the flow direction of the reactant gas. Furthermore, in this embodiment, the conduit 300 is divided into three parts because a portion of the first tube 310 extends into the air inlet A, and a portion of the third tube 330 extends into the air outlet B. A certain amount of space is needed for assembling and disassembling the first tube 310 and the third tube 330, and the area of ​​the second tube 320 serves as this space. During installation, the area of ​​the second tube 320 can be used as the installation space for the first tube 310 and the third tube 330. First, the first tube 310 and the third tube 330 are installed, and then the second tube 320 is installed. Alternatively, during disassembly, after removing the second tube 320, the area of ​​the second tube 320 can be used as the disassembly space for the first tube 310 and the third tube 330, and then the first tube 310 and the third tube 330 are disassembled.

[0040] In one embodiment, the second tube portion 320 and the third tube portion 330 are completely identical, so that there is no need to distinguish between the second tube portion 320 and the third tube portion 330 when installing or disassembling. However, the first tube portion 310 is significantly different from the second tube portion 320 and the third tube portion 330. Firstly, the first tube portion 310 is larger in size, and secondly, the first tube portion 310 is provided with a first opening K1. Therefore, the above design makes it easier for personnel to install and disassemble.

[0041] In one embodiment, the cross-section of the conduit 300 perpendicular to the first direction X is a rectangular ring, wherein the first tube portion 310, the second tube portion 320, and the third tube portion 330 all have the same size rectangular ring cross-section perpendicular to the first direction X. Of course, the cross-section of the conduit 300 perpendicular to the first direction X can also be other shapes.

[0042] In one embodiment, the inner walls of the first tube 310, the second tube 320 and the third tube 330 are on the same plane, so that the residual gas can flow more smoothly to the outlet B and reduce the residence time of the residual gas inside the conduit 300.

[0043] In one embodiment, the gas flow direction in the air inlet A, the first pipe section 310, the second pipe section 320, the third pipe section 330 and the air outlet B is on the same straight line, and the air flow does not have any bends, thus ensuring the maximum gas flow velocity.

[0044] In some other embodiments, no other pipe may be provided between the first pipe and the gas outlet, or a pipe may be provided but the inner wall of the reaction chamber near the gas outlet may not be blocked. Such a design will not affect the normal film formation of the reaction gas on the base, but it will cause residual gas to contaminate the inner wall of the reaction chamber near the gas outlet, increasing the difficulty of later maintenance.

[0045] In one embodiment, the first tube 310 is further provided with a second opening K2 opposite to the first opening K1. The reactor 10 also includes a heating element 400, which is disposed in the reaction chamber 10 and located on one side of the bearing surface of the base 200 and spaced apart from the base 200. The heating element 400 includes a first surface S, which is disposed opposite to the bearing surface of the base 200 through the second opening K2. The first surface S is flush with the inner wall of the first tube 310.

[0046] Specifically, the heated component 400 refers to a component that generates heat when external energy is input. After generating heat, the heated component 400 can transfer the heat to the reaction gas and the substrate or wafer on the supporting surface of the base 200 through heat conduction or heat radiation, providing a high-temperature environment for the reaction and increasing the reaction rate. The first tube 310 also has a second opening K2, through which the heated component 400 is exposed. The first surface S of the heated component 400 directly faces the supporting surface of the base 200, making the heat conduction and heat radiation efficiency of the heated component 400 even higher.

[0047] In one embodiment, the orthographic projection of the base 200 onto the heated member 400 is located within the heated member 400. The advantage of this design is that it ensures that the heated member 400 is directly above the base 200, resulting in uniform heating at all locations on the bearing surface of the base 200.

[0048] In one embodiment, the reactor 10 further includes a first insulation element 510 and a second insulation element 520. The first insulation element 510 is at least partially located in the space enclosed by the base 200, the conduit 300, and the base 110. The second insulation element 520 is at least partially located in the space enclosed by the heat-receiving element 400, the conduit 300, the base 110, and the top cover 120. The second insulation element 520 and the first insulation element 510 cooperate to cover the space enclosed by the first tube 310, the base 200, and the heat-receiving element 400.

[0049] Specifically, the first insulation component 510 is used to reduce heat loss from the base 200, thereby ensuring the stability of the reaction temperature. Optionally, the first insulation component 510 is provided on all sides except the bearing surface of the base 200. The second insulation component 520 is used to reduce heat loss from the heated component 400, thereby reducing energy consumption. Optionally, the second insulation component 520 is provided on all sides except the first surface S of the heated component 400 facing the base 200. The first and second insulation components 510 work together to cover the outer side of the first tube 310 and the space enclosed by the base 200 and the heated component 400, thus providing insulation for each component and preventing insulation gaps.

[0050] In one embodiment, the first insulation member 510 and the second insulation member 520 completely fill the internal space outside the conduit 300, thereby achieving the best insulation effect.

[0051] In one embodiment, the reactor 10 further includes a support 600 disposed at the bottom of the base 110, which supports the base 200.

[0052] Furthermore, the support member 600 is a lifting mechanism, which is installed at the bottom of the base 110. The lifting mechanism is used to control the base 200 to rise or fall. In other embodiments, the support member 600 can also be a rotating mechanism, which is installed at the bottom of the base 110. The rotating mechanism is used to control the base 200 to rotate.

[0053] In one embodiment, the first insulation member 510 is further disposed around the support member 600.

[0054] In one embodiment, see Figure 3 , Figure 3 yes Figure 1 An enlarged schematic diagram of one embodiment of the central region P. The side wall of the second opening K2 is provided with a first step portion 311, and the heated member 400 is mounted on the first step portion 311.

[0055] Specifically, the first step 311 supports the heated component 400 so that it will not fall out of the second opening K2. At the same time, the heated component 400 is mounted on the first step 311. The heated component 400 can be easily removed from the second opening K2 or easily installed at the second opening K2, making the disassembly and assembly of the heated component 400 very convenient.

[0056] In one embodiment, see Figure 1 and Figure 4 , Figure 4 yes Figure 1An enlarged schematic diagram of one embodiment of the central region Q. The reactor 10 also includes a protective cover 700, which is disposed on the first insulation member 510 to prevent the first insulation member 510 from being exposed relative to the base 200. The protective cover 700 includes a cover body 710 and a connecting portion 720. The cover body 710 is located between the base 200 and the first insulation member 510. The connecting portion 720 is disposed around the cover body 710 and connected to the cover body 710. The side wall of the first opening K1 is provided with a second step portion 312, and the connecting portion 720 is mounted on the second step portion 312.

[0057] Specifically, a gap exists between the base 200 and the first insulation component 510 to allow relative movement between them. To prevent film deposition on the sidewall of the base 200, a cover 710 is positioned between the sidewall of the base 200 and the first insulation component 510 to protect the first insulation component 510 from corrosion by the reactive gas. One end of the connecting portion 720 is connected to the cover 710; optionally, the extending direction of the connecting portion 720 is perpendicular to the extending direction of the cover 710. The other end of the connecting portion 720 extends away from the base 200 and rests on the second step 312 at the first opening K1 of the first tube portion 310. This design facilitates the installation and removal of the protective cover 700. In addition, the protective cover 700 is provided on the first insulation component 510. By preventing the first insulation component 510 from being exposed relative to the base 200, the reactive gas is prevented from corroding the first insulation component 510 or from causing a serious parasitic reaction on the first insulation component 510. As a result, there is no need to clean the first insulation component 510 frequently, reducing the workload of maintenance.

[0058] In one embodiment, the surface of the connecting portion 720 facing the heated member 400 and the inner wall of the lower side of the conduit 300 are on the same plane.

[0059] In one embodiment, the reactor 10 further includes a heating assembly 800 for heating the heat-receiving element 400 and / or the base 200. The heating assembly 800 is located outside the reaction chamber 100 and includes an induction coil 810 and a power supply 820 for supplying current to the induction coil 810. The induction coil 810 is mounted on the upper cover 120.

[0060] Specifically, the heating assembly 800 provides energy to the heated component 400 and / or the base 200, thereby causing the heated component 400 to generate heat. The power supply 820 provides alternating current to the induction coil 810 through a transmission line. The induction coil 810 generates an induced magnetic field, and the eddy current effect of the induced magnetic field causes the heated component 400 and / or the base 200 to heat up. The induction coil 810 is fixed to the outer side of the top of the upper cover 120, thus placing the induction coil 810 close to the heated component 400 and / or the base 200. The power supply 820 can be mounted on the upper cover 120 via a mounting bracket. Optionally, the heating assembly 800 can be used to heat the heated component 400 alone, or it can heat the heated component 40 and the base 200 together. Heating together can increase the heating speed and better maintain the temperature stability of the reaction environment.

[0061] A second aspect of this application provides a semiconductor processing apparatus, which includes the reactor 10 in any of the above embodiments. The reactor 10 of this application includes a reaction chamber 100, a base 200, and a conduit 300. The first end S1 of the conduit 300 extends into an inlet A. After the reaction gas enters the inlet A, it can flow directly to the bearing surface of the base 200. During the process, no other gases or assembly gaps of other components will affect the flow of the reaction gas, ensuring the stability of the reaction process.

[0062] In one application scenario, combined Figure 1 and Figure 2 , Figure 2 According to top to bottom Figure 1 The disassembly sequence of the components of reactor 10 is shown.

[0063] When disassembling reactor 10, the following steps shall be followed:

[0064] S101. Remove the top cover 120 from the base 110, wherein the power supply 820 and the induction coil 810, which are fixed to the top cover 120, are removed together.

[0065] S102. Remove the second insulation component 520 from the internal space of the base 110 from above.

[0066] S103. Separate the heated element 400 from the first tube 310 from above, and remove it from the internal space of the base 110.

[0067] S104. Separate the protective cover 700 from the first tube 310 from above, and remove it from the internal space of the base 110.

[0068] S105. Separate the second tube 320 from the first tube 310 and the third tube 330 from above, and remove it from the internal space of the base 110.

[0069] S106. Remove the first tube 310 and the third tube 330 from the internal space of the base 110 from above; wherein, when removing the first tube 310, first move the first tube 310 into the internal space of the reactor 10 so that the first tube 310 is separated from the air inlet A, and after the first tube 310 is completely in the internal space of the reactor 10, remove the first tube 310 from the internal space of the base 110 from above; when removing the third tube 330, first move the third tube 330 into the internal space of the reactor 10 so that the second tube 320 is separated from the air outlet B, and after the third tube 330 is completely in the internal space of the reactor 10, remove the third tube 330 from the internal space of the base 110 from above.

[0070] S107. Remove the base 200 from the interior space of the base 110 from above.

[0071] S108. Remove the first insulation component 510 from the internal space of the base 110 from above.

[0072] As can be seen from the above disassembly process, the reactor 10 designed in this application is disassembled by top disassembly, which makes the disassembly process easy to observe and the disassembly operation simple and convenient.

[0073] When installing reactor 10, follow these steps:

[0074] S201. Place the first insulation component 510 into the internal space of the base 110 from above.

[0075] S202. Place the base 200 on the first insulation component 510 from above.

[0076] S203. Place the first tube 310 and the third tube 330 into the internal space of the base 110 from above. When installing the first tube 310, when the first tube 310 is lowered to be level with the air inlet A, insert the first end S1 of the first tube 310 into the air inlet A. When installing the third tube 330, when the third tube 330 is lowered to be level with the air outlet B, insert a portion of the third tube 330 into the air outlet B.

[0077] S204. The second tube 320 is placed into the internal space of the base 110 from above and installed between the first tube 310 and the third tube 330, connecting the first tube 310 and the third tube 330.

[0078] S205. The protective cover 700 is placed into the internal space of the base 110 from above, and the cover 710 is inserted between the side wall of the base 200 and the first insulation member 510, while the connecting part 720 is mounted on the second step part 312 at the side wall position of the first opening K1 of the first tube part 310.

[0079] S206. The heated component 400 is placed into the internal space of the base 110 from above, and the heated component 400 is mounted on the first step portion 311 at the side wall position of the second opening K2 of the first tube portion 310.

[0080] S207. Place the first insulation element 510 above the conduit 300 and the heated element 400 from above.

[0081] S208. Place the top cover 120 onto the base 110 from above.

[0082] As can be seen from the above installation process, the reactor 10 designed in this application is installed in a top-mounted manner. When installing each component, the installation status of each component can be seen directly from above, such as the position and level of each component. Moreover, after each component is installed, under the action of gravity, when the next component is installed from top to bottom, it will not affect the position of the previously installed components. Compared with the non-top-mounted method, the effect of gravity may affect the entire installation process, thus making the installation process more complicated.

[0083] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A reactor for a CVD (Continuous Chemical Vapor Deposition) device, characterized in that, The reactor includes: The reaction chamber has an air inlet and an air outlet on its side wall that communicate with the internal space of the reaction chamber. A base is disposed in the reaction chamber, and the base is provided with a bearing surface; A conduit is disposed in the reaction chamber, connecting the air inlet and the air outlet. The conduit wall has a first opening, and the bearing surface of the base is exposed in the conduit through the first opening. The first end of the conduit extends into the air inlet.

2. The reactor according to claim 1, characterized in that, The reaction chamber includes a base and a top cover that is detachably mounted on the base, wherein the base is provided with the air inlet and the air outlet; The conduit includes a first tube section, one end of which extends into the air inlet as the first end of the conduit, with the upstream and downstream defined by the airflow direction. The other end of the first tube section is located downstream of the base and spaced apart from the air outlet. The first opening is located in the first tube section.

3. The reactor according to claim 2, characterized in that, The conduit further includes a second tube section and a third tube section, the second tube section being located between and communicating with the first tube section and the third tube section, and the third tube section extending into the gas outlet and being at least partially located inside the reaction chamber.

4. The reactor according to claim 2, characterized in that, The first tube section is further provided with a second opening opposite to the first opening, and the reactor further includes: A heating element is disposed in the reaction chamber and located on one side of the bearing surface of the base and spaced apart from the base. The heating element includes a first surface, which is disposed opposite to the bearing surface of the base through a second opening. The first surface is flush with the inner wall of the first tube.

5. The reactor according to claim 4, characterized in that, The orthographic projection of the base onto the heated component lies within the heated component.

6. The reactor according to claim 4, characterized in that, The sidewall of the second opening is provided with a first step, and the heated component is mounted on the first step.

7. The reactor according to claim 4, characterized in that, The reactor also includes: A first thermal insulation element, which is at least partially located in the space enclosed by the base, the conduit, and the base; The second insulation element is at least partially located in the space enclosed by the heated element, the conduit, the base, and the top cover, and cooperates with the first insulation element to cover the space enclosed by the first pipe, the base, and the heated element.

8. The reactor according to claim 7, characterized in that, The reactor also includes: A protective cover, wherein the protective cover is disposed on the first insulation component to prevent the first insulation component from being exposed relative to the base, the protective cover comprising: The cover is located between the base and the first insulation component; A connecting part is provided around the cover and connected to the cover. The side wall of the first opening is provided with a second step, and the connecting part is mounted on the second step.

9. The reactor according to claim 4, characterized in that, The reactor also includes: A heating assembly for heating the heated component and / or the base, the heating assembly being located outside the reaction chamber, the heating assembly including an induction coil and a power source for supplying current to the induction coil, the induction coil being mounted on the upper cover.

10. A semiconductor processing apparatus, characterized in that, The semiconductor processing apparatus includes the reactor as described in any one of claims 1 to 9.

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