A semiconductor device and its oxygen concentration monitoring system

Abstract

This utility model discloses a semiconductor device and its oxygen concentration monitoring system. The semiconductor device includes a workbench, and the system includes: a vacuum transfer module connected to the workbench for vacuum transfer of products processed on the workbench; the vacuum transfer module is equipped with multiple transfer separation valves; an oxygen concentration detection module connected to the vacuum transfer module for detecting the oxygen concentration in the vacuum transfer module; and a concentration monitoring and control module connected to both the transfer separation valves and the oxygen concentration detection module, for acquiring the on / off signals of the transfer separation valves and receiving the oxygen concentration detected by the oxygen concentration detection module, and determining whether the oxygen concentration exceeds a preset threshold; and for determining whether to generate an oxygen concentration over-limit alarm signal based on the on / off signals of the transfer separation valves if the oxygen concentration in the vacuum transfer module exceeds the preset threshold. This utility model can improve the accuracy and reliability of oxygen concentration monitoring.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment technology, and in particular to a semiconductor device and its oxygen concentration monitoring system. Background Technology

[0002] In the field of semiconductor thin film deposition, as process technology continues to advance towards greater precision, the vacuum requirements for many metal thin film processes are becoming increasingly stringent. If the vacuum transfer chamber is poorly sealed, the oxygen concentration inside will rise, potentially causing oxidation of the deposited metal film during wafer transfer, severely impacting product quality and resulting in economic losses. However, existing thin film deposition equipment has monitoring deficiencies, failing to monitor the oxygen concentration inside the chamber in real time, and commonly used vacuum gauges are also unable to accurately identify minute external leaks through pressure changes.

[0003] Furthermore, within the vacuum transfer chamber, the opening and closing of SLV valves at different locations can cause short-term fluctuations in oxygen concentration. Existing oxygen concentration monitoring equipment can only detect the concentration and cannot identify the specific opening and closing actions of SLV valves. This may lead to false alarms for rising oxygen concentrations, affecting the normal operation of the equipment. Moreover, these existing monitoring devices are self-contained systems with independent hardware and software, making them difficult to integrate with the machine. This not only makes them inconvenient to use and maintain but also results in high costs. Utility Model Content

[0004] This invention provides a semiconductor device and its oxygen concentration monitoring system, aiming to improve the accuracy and reliability of oxygen concentration monitoring.

[0005] In a first aspect, embodiments of the present invention provide an oxygen concentration monitoring system for a semiconductor device, the semiconductor device including a workbench, and the system comprising:

[0006] A vacuum transfer module, connected to the worktable, is used for vacuum transfer of products processed by the worktable; the vacuum transfer module is equipped with multiple transfer separation valves.

[0007] An oxygen concentration detection module, connected to the vacuum transmission module, is used to detect the oxygen concentration in the vacuum transmission module;

[0008] The concentration monitoring and control module is connected to the transmission separation valve and the oxygen concentration detection module, respectively. It is used to acquire the switching signal of the transmission separation valve and receive the oxygen concentration detected by the oxygen concentration detection module, and determine whether the oxygen concentration exceeds a preset threshold. It is also used to determine whether to generate an alarm signal for excessive oxygen concentration based on the switching signal of the transmission separation valve if it is determined that the oxygen concentration in the vacuum transmission module exceeds the preset threshold.

[0009] Furthermore, the vacuum transmission module includes a vacuum transmission chamber and a vacuum-atmosphere conversion chamber, the vacuum transmission chamber being connected to the worktable, and the transmission separation valve being disposed between the vacuum transmission chamber and the vacuum-atmosphere conversion chamber.

[0010] Furthermore, the oxygen concentration detection module includes:

[0011] The first vacuum line is connected to the vacuum transmission chamber;

[0012] The first oxygen detector is installed on the first vacuum pipeline and connected to the concentration monitoring and control module.

[0013] Furthermore, the oxygen concentration detection module also includes:

[0014] The second vacuum line is connected to the vacuum-atmosphere conversion chamber;

[0015] The second oxygen detector is installed on the second vacuum pipeline and connected to the concentration monitoring and control module.

[0016] Furthermore, the concentration monitoring and control module includes:

[0017] An industrial control computer is connected to the transmission separation valve and is used to collect the opening and closing signals of the transmission separation valve;

[0018] An oxygen concentration analysis module is connected to both the oxygen concentration detection module and the industrial control computer. It is used to acquire the oxygen concentration detected by the oxygen concentration detection module and determine whether it exceeds a preset threshold; and to acquire the switching signal of the transmission separation valve and determine whether an alarm signal for excessive oxygen concentration is generated.

[0019] Furthermore, the alarm signal is a signal indicating a leak in the vacuum transmission module.

[0020] Furthermore, the vacuum transmission module also includes a device front-end module and a load locking chamber.

[0021] Furthermore, the transmission separation valve is also disposed at the upper and lower ends of the front-end module of the device and at the upper and lower ends of the load locking chamber.

[0022] Furthermore, the transmission separation valve is an SLV separation valve.

[0023] In a second aspect, embodiments of the present invention provide a semiconductor device, including an oxygen concentration monitoring system for a semiconductor device as described in the first aspect.

[0024] This utility model provides a semiconductor device and its oxygen concentration monitoring system. The semiconductor device includes a workbench, and the system includes: a vacuum transfer module connected to the workbench for vacuum transfer of products processed on the workbench; the vacuum transfer module is equipped with multiple transfer separation valves; an oxygen concentration detection module connected to the vacuum transfer module for detecting the oxygen concentration in the vacuum transfer module; and a concentration monitoring and control module connected to both the transfer separation valves and the oxygen concentration detection module for acquiring the on / off signals of the transfer separation valves and receiving the oxygen concentration detected by the oxygen concentration detection module, and determining whether the oxygen concentration exceeds a preset threshold; and for generating an alarm signal indicating excessive oxygen concentration based on the on / off signal of the transfer separation valves if the oxygen concentration in the vacuum transfer module exceeds the preset threshold. This utility model integrates the oxygen concentration detection module with the workbench of the semiconductor device, such as a thin film deposition process machine, achieving greater convenience in use and maintenance, and reduced costs. Furthermore, this utility model, based on the oxygen concentration detection module, can promptly detect abnormalities in the oxygen concentration within the chamber, preventing product quality from being affected by elevated oxygen concentration and reducing cost losses. Furthermore, this embodiment of the invention can detect the switching signal of the transmission separation valve while monitoring the oxygen concentration in the chamber in real time. This can avoid false alarms caused by oxygen concentration fluctuations due to the switching action of the transmission separation valve, which would affect the normal operation of the machine and thus improve the accuracy and reliability of oxygen concentration monitoring. Attached Figure Description

[0025] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0026] Figure 1 A schematic diagram of the structure of an oxygen concentration monitoring system for a semiconductor device provided in an embodiment of this utility model;

[0027] Figure 2 A test example diagram of an oxygen concentration monitoring system for a semiconductor device provided in this embodiment of the present invention;

[0028] Figure 3 This is a flowchart illustrating an oxygen concentration monitoring system for a semiconductor device provided in an embodiment of the present invention.

[0029] Markings in the image:

[0030] 100. Vacuum transfer chamber; 101. Transfer separation valve; 102. Vacuum-atmosphere conversion chamber; 1031. First vacuum pumping pipeline; 1032. Second vacuum pumping pipeline; 1041. First oxygen detector; 1042. Second oxygen detector; 105. Oxygen concentration analysis module; 106. Industrial control computer. Detailed Implementation

[0031] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the present utility model.

[0032] It should be understood that, when used in this specification and the appended claims, the terms "comprising" and "including" indicate the presence of the described features, integrals, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or collections thereof.

[0033] It should also be understood that the terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the scope of the invention. As used in this specification and the appended claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms unless the context clearly indicates otherwise.

[0034] It should also be further understood that the term "and / or" as used in this specification and the appended claims refers to any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.

[0035] Please see below. Figure 1 This utility model provides an oxygen concentration monitoring system for a semiconductor device, the semiconductor device including a workbench, and the system including:

[0036] A vacuum transfer module is connected to the worktable and is used for vacuum transfer of the products processed by the worktable; the vacuum transfer module is equipped with multiple transfer separation valves 101.

[0037] An oxygen concentration detection module, connected to the vacuum transmission module, is used to detect the oxygen concentration in the vacuum transmission module;

[0038] The concentration monitoring and control module is connected to the transmission separation valve 101 and the oxygen concentration detection module, respectively. It is used to acquire the switching signal of the transmission separation valve 101 and receive the oxygen concentration detected by the oxygen concentration detection module, and determine whether the oxygen concentration exceeds a preset threshold. It is also used to determine whether to generate an alarm signal for oxygen concentration exceeding the limit based on the switching signal of the transmission separation valve 101 if it is determined that the oxygen concentration in the vacuum transmission module exceeds the preset threshold.

[0039] In this embodiment, the oxygen concentration monitoring system is used in semiconductor equipment and specifically includes a vacuum transmission module, an oxygen concentration detection module, and a concentration monitoring and control module. The vacuum transmission module is equipped with multiple transmission separation valves 101, which communicate with a worktable to vacuum-transfer processed products. The oxygen concentration detection module detects the oxygen concentration within the vacuum transmission module. The concentration monitoring and control module determines whether the detected oxygen concentration exceeds a preset threshold. If the oxygen concentration exceeds the preset threshold, it further determines whether to generate an alarm signal based on the opening and closing signals of the transmission separation valves 101, i.e., whether a leak has occurred in the vacuum transmission module.

[0040] This embodiment integrates the oxygen concentration detection module with the workbench of semiconductor equipment, such as a thin film deposition process machine, achieving greater convenience in use and maintenance, and reduced costs. Furthermore, by detecting oxygen concentration using the module, this embodiment can promptly identify anomalies in the chamber's oxygen concentration, preventing product quality issues caused by elevated oxygen levels and reducing cost losses. Additionally, while monitoring the chamber's oxygen concentration in real time, this embodiment can also detect the on / off signal of the transmission separation valve 101. This avoids false alarms caused by oxygen concentration fluctuations due to the valve's operation, thus preventing disruption to the machine's normal operation and improving the accuracy and reliability of oxygen concentration monitoring.

[0041] It is worth noting that the oxygen concentration monitoring system of this embodiment is not only suitable for semiconductor equipment, but can also be widely used in other industrial fields that require precise control of oxygen concentration, such as vacuum coating and vacuum heat treatment. By adopting the oxygen concentration monitoring system of this embodiment, companies in these fields can also achieve real-time monitoring and accurate early warning of oxygen concentration, thereby improving product quality and production efficiency, and reducing production costs and safety risks.

[0042] In a specific embodiment, when the switching signal of the transmission separation valve 101 is an open signal, no alarm signal for excessive oxygen concentration is generated.

[0043] When the switching signal of the transmission separation valve 101 is a closed signal, an alarm signal indicating that the oxygen concentration exceeds the limit is generated.

[0044] In other words, if the oxygen concentration exceeds the preset threshold and the transfer separation valve 101 is open, the fluctuation in oxygen concentration may be normal due to product transfer in progress, and therefore no alarm signal will be generated. However, if the transfer separation valve 101 is closed but the oxygen concentration exceeds the preset threshold, it is likely that there is a leak in the vacuum transfer module, allowing external oxygen to enter. In this case, the system will generate an alarm signal to remind the operator to check and repair it in time. This design can avoid false alarms and improve the accuracy of monitoring.

[0045] Here, the transmission separation valve 101 is an SLV separation valve, which is a type of valve used in vacuum transmission systems to separate different vacuum zones. When open, it allows the product to pass through; when closed, it isolates the two vacuum zones. In the oxygen concentration monitoring system of the semiconductor equipment in this embodiment, the state of the SLV separation valve (open or closed) is used as an important basis for determining whether an oxygen concentration exceeding the limit alarm signal is generated. When the SLV separation valve is closed and the oxygen concentration exceeds a preset threshold, the system determines that there may be a leak in the vacuum transmission module, thereby generating an alarm signal so that operators can take timely measures for troubleshooting and repair. This design improves the accuracy and reliability of oxygen concentration monitoring, helping to ensure the normal operation of semiconductor equipment and product quality.

[0046] In one embodiment, the vacuum transmission module includes a vacuum transmission chamber 100 and a vacuum-atmosphere conversion chamber 102. The vacuum transmission chamber 100 is connected to the worktable, and the transmission separation valve 101 is disposed between the vacuum transmission chamber 100 and the vacuum-atmosphere conversion chamber 102.

[0047] The vacuum transfer chamber 100 is used to transfer processed products in a vacuum environment, while the vacuum-atmosphere conversion chamber 102 is used to switch between a vacuum environment and an atmospheric environment to ensure that products can be transferred safely and stably in different environments. The transfer separation valve 101 allows for flexible isolation and connection between the vacuum transfer chamber 100 and the vacuum-atmosphere conversion chamber 102, thereby meeting the needs of semiconductor equipment in different process steps.

[0048] In practical applications, the vacuum transfer module may also include a front-end module EFEM and a load lock chamber, etc. In addition to being located between the vacuum transfer chamber 100 and the vacuum-atmosphere conversion chamber 102, the transfer separation valve 101 may also be located at the upper and lower ends of the front-end module EFEM, between the vacuum transfer chamber 100 and the process processing unit connected to it, and at the upper and lower ends of the load lock chamber.

[0049] In one embodiment, the oxygen concentration detection module includes:

[0050] The first vacuum line 1031 is connected to the vacuum transmission chamber 100;

[0051] The first oxygen detector 1041 is installed on the first vacuum pipeline 1031 and connected to the concentration monitoring and control module.

[0052] In this embodiment, the oxygen concentration detection module includes a first vacuum pumping line 1031 connected to the vacuum transmission chamber 100, and a first oxygen detector 1041 disposed on the first vacuum pumping line 1031. The oxygen concentration detection module obtains oxygen concentration information within the vacuum transmission chamber 100 by evacuating the gas inside the chamber. Simultaneously, since the oxygen concentration detection module is also connected to the concentration monitoring and control module, the concentration monitoring and control module can perform comprehensive judgment and processing based on this oxygen concentration information and the switching signal of the transmission separation valve 101.

[0053] Furthermore, the oxygen concentration detection module also includes:

[0054] The second vacuum line 1032 is connected to the vacuum-atmosphere conversion chamber 102;

[0055] The second oxygen detector 1042 is installed on the second vacuum line 1032 and connected to the concentration monitoring and control module.

[0056] In other words, the oxygen concentration detection module described in this embodiment also includes a second vacuum line 1032 connected to the vacuum-atmosphere conversion chamber 102, and a second oxygen detector 1042 mounted on the second vacuum line 1032. Through the first vacuum line 1031 and the second vacuum line 1032, the oxygen concentration detection module can monitor the oxygen concentration in the vacuum transmission chamber 100 and the vacuum-atmosphere conversion chamber 102 respectively, ensuring a comprehensive understanding of the oxygen concentration in different areas of the semiconductor device. Simultaneously, both the first oxygen detector 1041 and the second oxygen detector 1042 are connected to the concentration monitoring and control module, enabling the concentration monitoring and control module to acquire and analyze oxygen concentration data in real time, thereby more accurately switching signals on and off, and determining whether to generate an alarm signal accordingly. This design not only improves the accuracy and reliability of oxygen concentration monitoring but also provides strong support for the stable operation of the semiconductor device.

[0057] In one embodiment, the concentration monitoring and control module includes:

[0058] An industrial control computer 106 is connected to the transmission separation valve 101 and is used to collect the switching signals of the transmission separation valve 101.

[0059] The oxygen concentration analysis module 105 is connected to the oxygen concentration detection module and the industrial control computer 106 respectively. It is used to obtain the oxygen concentration detected by the oxygen concentration detection module and determine whether it exceeds the preset threshold; and to obtain the switching signal of the transmission separation valve 101 and determine whether an alarm signal for oxygen concentration exceeding the limit is generated.

[0060] In this embodiment, the concentration monitoring and control module mainly consists of an industrial control computer 106 and an oxygen concentration analysis module 105. The industrial control computer 106 is connected to the transmission isolation valve 101 and collects its opening and closing signals. The oxygen concentration analysis module 105 is connected to the oxygen concentration detection module and the industrial control computer 106, acquires the detected oxygen concentration, determines whether it exceeds a preset threshold, and, based on the opening and closing signals of the transmission isolation valve 101, determines whether to generate an alarm signal indicating excessive oxygen concentration. In practical applications, the oxygen concentration alarm threshold can be set on the industrial control computer 106 via EC. When the oxygen concentration rises above the alarm setting value, it determines whether there is an SLV valve opening signal. If there is an opening signal, no alarm is triggered for excessive oxygen concentration, and monitoring continues. If there is no opening signal, an alarm is triggered and the system stops for further testing. Furthermore, after integrating and analyzing the oxygen concentration data with the opening and closing action signals of valves at various positions in the chamber, the oxygen concentration analysis module 105 can transmit the data back to the industrial control computer 106 and display the oxygen concentration change curve in real time on the industrial control computer 106's operating interface. Figure 2 As shown, the black line is the real-time O2 concentration change curve, the blue line is the pressure change curve of the vacuum transfer chamber, and the vertical bars of different colors represent the SLV door opening signals at various locations.

[0061] This allows for real-time monitoring of the oxygen concentration within the vacuum transfer chamber, displaying it on the user interface and providing access to historical data for analyzing trends in oxygen concentration. Furthermore, the oxygen concentration analysis module 105 can compare the analysis results with preset process parameters, automatically adjusting the semiconductor equipment's operating status to ensure product quality and production efficiency. For example, when the oxygen concentration exceeds a preset threshold, the oxygen concentration analysis module 105 can automatically adjust the semiconductor equipment's process parameters, such as lowering the stage heating temperature or increasing the vacuuming frequency, to reduce the oxygen concentration and restore it to a safe range. This automated adjustment not only improves production efficiency but also helps ensure the stable operation of the semiconductor equipment and the consistency of product quality.

[0062] Furthermore, the concentration monitoring and control module in this embodiment may also include an alarm display module, used to display alarm information when an alarm signal indicating excessive oxygen concentration is generated. The alarm display module can be connected to the industrial control computer 106, receiving alarm signals sent by the industrial control computer 106 and alerting operators through sound, light, and electrical signals. In specific implementations, the alarm display module can be set on the operating interface of the semiconductor equipment. When an alarm signal indicating excessive oxygen concentration is generated, the alarm display module will pop up an alarm window on the operating interface, displaying alarm information such as "Oxygen concentration exceeds limit, please check the vacuum transmission module," and simultaneously emitting sound and light prompts to attract the operator's attention. Operators can promptly inspect and repair the semiconductor equipment based on the alarm information, avoiding impacts on product quality and production efficiency due to abnormal oxygen concentration. This design not only improves the accuracy and reliability of oxygen concentration monitoring but also provides strong support for the stable operation of the semiconductor equipment.

[0063] like Figure 3 As shown, this utility model embodiment also provides a method for monitoring oxygen concentration systems suitable for semiconductor devices, specifically including steps S101 to S103.

[0064] Step S101: Obtain the switching signal of the transmission separation valve 101 and detect the oxygen concentration in the vacuum transmission module;

[0065] Step S102: Determine whether the oxygen concentration exceeds a preset threshold;

[0066] Step S103: If it is determined that the oxygen concentration in the vacuum transmission module exceeds a preset threshold, then determine whether to generate an alarm signal indicating that the oxygen concentration exceeds the limit based on the switching signal of the transmission separation valve 101.

[0067] In this embodiment, the oxygen concentration in the vacuum transmission module is first detected, and then a switching signal is activated based on the detection result. If the concentration exceeds a threshold, an alarm signal indicating that the oxygen concentration exceeds the limit is issued based on the switching signal of the transmission separation valve 101.

[0068] This embodiment integrates the oxygen concentration detection module with the workbench of semiconductor equipment, such as a thin film deposition process machine, achieving greater convenience in use and maintenance, and reduced costs. Furthermore, by detecting oxygen concentration using the module, this embodiment can promptly identify anomalies in the chamber's oxygen concentration, preventing product quality issues caused by elevated oxygen levels and reducing cost losses. Additionally, while monitoring the chamber's oxygen concentration in real time, this embodiment can also detect the on / off signal of the transmission separation valve 101. This avoids false alarms caused by oxygen concentration fluctuations due to the valve's operation, thus preventing disruption to the machine's normal operation and improving the accuracy and reliability of oxygen concentration monitoring.

[0069] Specifically, determining whether to generate an alarm signal indicating excessive oxygen concentration based on the switching signal of the transmission separation valve 101 includes:

[0070] When the switching signal of the transmission separation valve 101 is an open signal, no alarm signal for excessive oxygen concentration is generated.

[0071] When the switching signal of the transmission separation valve 101 is a closed signal, an alarm signal indicating that the oxygen concentration exceeds the limit is generated.

[0072] If the oxygen concentration exceeds the preset threshold and the transfer separation valve 101 is open, the fluctuation in oxygen concentration may be normal due to product transfer in progress, thus no alarm signal will be generated. However, if the transfer separation valve 101 is closed but an oxygen concentration exceeding the preset threshold is detected, it is likely that there is a leak in the vacuum transfer module, allowing external oxygen to enter. In this case, an alarm signal will be generated to remind operators to check and repair promptly. This avoids false alarms and improves monitoring accuracy.

[0073] Here, the alarm signal is a signal indicating a leak in the vacuum transmission module, specifically a warning message issued when the oxygen concentration exceeds the safe range and the transmission separation valve 101 is closed. Upon receiving this alarm signal, the system automatically triggers a series of countermeasures, such as suspending the operation of the semiconductor equipment and shutting down relevant process steps, to prevent further increases in oxygen concentration from adversely affecting product quality. Furthermore, the alarm signal can also be sent to the operator's monitoring terminal, alerting the operator through various means such as sound, light, and electricity, ensuring that the operator can promptly detect and address the issue of excessive oxygen concentration.

[0074] In one embodiment, after the step of generating an alarm signal indicating excessive oxygen concentration when the switching signal of the transmission separation valve 101 is a closed signal, the method includes:

[0075] Helium mass spectrometry leak detection technology was used to locate the leak.

[0076] This embodiment utilizes helium mass spectrometry leak detection technology to precisely locate leaks in the vacuum transmission module, facilitating rapid repairs by maintenance personnel and improving the operational efficiency and reliability of semiconductor equipment. Helium mass spectrometry leak detection is a helium-based mass spectrometry analysis technique that locates and identifies leaks in the vacuum system by detecting helium leaks. It features high sensitivity, high precision, and high efficiency, enabling rapid and accurate location of leaks in complex semiconductor equipment environments, thus preventing equipment failures and product quality issues caused by excessive oxygen concentrations.

[0077] Of course, in other embodiments, other technologies can also be used to locate leaks, such as ultrasonic leak detection and infrared thermal imaging leak detection. These technologies each have their own characteristics and can be selected based on the specific semiconductor equipment environment and requirements. Ultrasonic leak detection locates leaks by detecting the ultrasonic signals generated by the leak, and is suitable for leak detection in large equipment and hard-to-access areas. Infrared thermal imaging leak detection uses an infrared thermal imager to detect temperature changes at the leak site, and is suitable for leak detection in high- or low-temperature environments. The application of these technologies further improves the reliability and flexibility of the oxygen concentration monitoring system for semiconductor equipment, providing strong support for the stable operation of semiconductor equipment.

[0078] This embodiment also provides a semiconductor device, including an oxygen concentration monitoring system for the semiconductor device as described above.

[0079] This semiconductor device can effectively monitor and manage the oxygen concentration in the vacuum transmission module in real time, and determine whether to generate an alarm signal based on the oxygen concentration and the switching signal of the transmission separation valve 101, thereby improving the operating efficiency and reliability of the device.

[0080] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the systems disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the descriptions are relatively simple; relevant parts can be referred to in the method section. It should be noted that those skilled in the art can make various improvements and modifications to this application without departing from the principles of this application, and these improvements and modifications also fall within the protection scope of the claims of this application.

[0081] It should also be noted that, in this specification, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

Claims

1. An oxygen concentration monitoring system for a semiconductor device, the semiconductor device comprising a workbench, characterized in that, The system includes: A vacuum transfer module, connected to the worktable, is used for vacuum transfer of products processed by the worktable; the vacuum transfer module is equipped with multiple transfer separation valves. An oxygen concentration detection module, connected to the vacuum transmission module, is used to detect the oxygen concentration in the vacuum transmission module; The concentration monitoring and control module is connected to the transmission separation valve and the oxygen concentration detection module, respectively. It is used to acquire the switching signal of the transmission separation valve and receive the oxygen concentration detected by the oxygen concentration detection module, and determine whether the oxygen concentration exceeds a preset threshold. It is also used to determine whether to generate an alarm signal for excessive oxygen concentration based on the switching signal of the transmission separation valve if it is determined that the oxygen concentration in the vacuum transmission module exceeds the preset threshold.

2. The oxygen concentration monitoring system for a semiconductor device according to claim 1, wherein The vacuum transmission module includes a vacuum transmission chamber and a vacuum-atmosphere conversion chamber. The vacuum transmission chamber is connected to the worktable, and the transmission separation valve is located between the vacuum transmission chamber and the vacuum-atmosphere conversion chamber.

3. The oxygen concentration monitoring system for a semiconductor device according to claim 2, wherein The oxygen concentration detection module includes: The first vacuum line is connected to the vacuum transmission chamber; The first oxygen detector is installed on the first vacuum pipeline and connected to the concentration monitoring and control module.

4. The oxygen concentration monitoring system for a semiconductor device according to claim 3, wherein The oxygen concentration detection module also includes: The second vacuum line is connected to the vacuum-atmosphere conversion chamber; The second oxygen detector is installed on the second vacuum pipeline and connected to the concentration monitoring and control module.

5. The oxygen concentration monitoring system of a semiconductor device according to claim 1, wherein The concentration monitoring and control module includes: An industrial control computer is connected to the transmission separation valve and is used to collect the opening and closing signals of the transmission separation valve; An oxygen concentration analysis module is connected to both the oxygen concentration detection module and the industrial control computer. It is used to acquire the oxygen concentration detected by the oxygen concentration detection module and determine whether it exceeds a preset threshold; and to acquire the switching signal of the transmission separation valve and determine whether an alarm signal for excessive oxygen concentration is generated.

6. The oxygen concentration monitoring system of a semiconductor device according to claim 1, wherein The alarm signal is a signal indicating that a leak has occurred in the vacuum transmission module.

7. The oxygen concentration monitoring system of a semiconductor device according to claim 1, wherein The vacuum transmission module also includes a front-end module and a load locking chamber.

8. The oxygen concentration monitoring system for a semiconductor device according to claim 7, wherein The transmission separation valve is also located at the upper and lower ends of the front-end module of the device and at the upper and lower ends of the load locking chamber.

9. The oxygen concentration monitoring system of a semiconductor device according to claim 1, wherein The transmission separation valve is an SLV separation valve.

10. A semiconductor device comprising an oxygen concentration monitoring system for a semiconductor device as described in any one of claims 1-9.

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