Vacuum etching machine based on multiple ion sources
By using a multi-ion source configuration and a multi-degree-of-freedom sample stage, combined with ion source angle adjustment and gas differentiation, the shortcomings of existing dual-ion source etching machines in complex etching needs have been overcome, achieving precise control and efficient etching results.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- FOSHAN IBD TECH CO LTD
- Filing Date
- 2025-09-08
- Publication Date
- 2026-07-31
AI Technical Summary
Existing dual-ion-source etching machines lack sufficient adjustability in ion beam incident angle and energy level when dealing with complex etching requirements, making it difficult to achieve fine processing.
By employing a multi-ion source configuration and adjusting the emission angle of the ion source through a mechanical rotation structure, combined with the multi-degree-of-freedom motion of the sample stage, dynamic adjustment and coverage of the ion beam can be achieved. Different grid materials and differentiated gas configurations are used to enhance the flexibility and stability of the etching process.
It achieves precise control over etching angle and morphology, improves the flexibility and stability of the etching process, is suitable for processing complex three-dimensional structures, reduces metal contamination, and improves etching uniformity.
Smart Images
Figure CN224582249U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of vacuum etching technology, and in particular to a vacuum etching machine based on a multi-ion source. Background Technology
[0002] Currently, ion beam etching (IBE) is a micro / nano fabrication method that uses high-energy ions to bombard solid surfaces, removing materials through physical sputtering or reactive etching mechanisms. This technology is widely used in semiconductor manufacturing, optical device fabrication, and micro / nano structure fabrication. Conventional ion beam etching systems typically employ a single ion source configuration, combined with the mechanical movement of the sample stage to achieve etching uniformity and angle control.
[0003] To achieve more functions, dual ion source designs have begun to be used in some etching machines. For example, in the technical solution disclosed in Chinese Patent Publication No. CN110571122A, a dual ion source IBE etching machine is used in semiconductor etching technology. When the ion source performs longitudinal removal or sidewall cleaning or both longitudinal removal and sidewall cleaning, the dual ion sources simultaneously emit ion beams to etch the wafer on the sample stage.
[0004] The dual-ion-source etching machine technology mentioned above is mainly used in semiconductor etching, but it lacks adaptability to most etching processes. In particular, when dealing with complex etching requirements, the adjustability of the ion beam incident angle and energy is insufficient, making it difficult to adapt to fine etching processes. Utility Model Content
[0005] The purpose of this application is to address one of the aforementioned technical deficiencies by providing a vacuum etching machine based on a multi-ion source, thereby improving the performance of the vacuum etching machine.
[0006] A vacuum etching machine based on multiple ion sources includes: a vacuum chamber, multiple ion sources, and a sample stage;
[0007] The sample stage is installed at a set position in the vacuum chamber to hold the sample that needs to be etched;
[0008] Each of the ion sources is distributed and disposed at multiple locations inside the vacuum chamber;
[0009] The emission direction of each of the ion sources is directed toward the processing area above the sample stage, and in terms of geometric layout, the ion beam regions emitted by at least two of the ion sources cover the processing area of the sample stage.
[0010] At least one of the ion sources is connected to the vacuum chamber via a mechanical rotating structure for dynamically adjusting the emission angle of the ion source;
[0011] During vacuum etching, control parameters and emission angles of at least two ion sources are set in the etching process to control the ion sources to emit ion beams toward the processing area above the sample stage to etch the sample.
[0012] In one embodiment, at least two of the ion sources are turned on synchronously or asynchronously, and operate synchronously or in stages during vacuum etching.
[0013] In one embodiment, the ion beams emitted by at least two of the ion sources are tuned to form overlapping, intersecting, or independent coverage areas in the processing region of the sample.
[0014] In one embodiment, at least two of the ion sources are configured with grids of different materials;
[0015] The ion source is supplied with an etching gas that matches the grid material.
[0016] In one embodiment, the ion source type includes: radio frequency ion source, Hall ion source, and Kaufman ion source;
[0017] The ion source uses a molybdenum grid and is supplied with fluorine-based gas, or the ion source uses a graphite grid and is supplied with oxygen.
[0018] In one embodiment, the sample stage is mounted at a predetermined position in the vacuum chamber via a motion bracket;
[0019] The motion support is used to move the sample stage within a predetermined area inside the vacuum chamber.
[0020] In one embodiment, the sample stage is connected to the motion support via a telescopic structure;
[0021] The telescopic structure is used to move the sample stage back and forth.
[0022] In one embodiment, the sample stage is connected to the motion support via a pitch structure;
[0023] The pitch structure is used to adjust the tilt of the sample stage.
[0024] In one embodiment, the sample stage is connected to the motion support via a swing structure;
[0025] The swing structure is used to adjust the swing of the sample stage.
[0026] In one embodiment, the vacuum etching machine based on multiple ion sources further includes: a control system, which is connected to each ion source and its mechanical rotation structure, and / or the drive motors built into the motion support, telescopic structure, pitch structure, and swing structure of the sample stage.
[0027] As described in the above embodiment, the multi-ion source-based vacuum etching machine has multiple ion sources distributed at various locations within the vacuum chamber. Each ion source emits its beam towards the processing area above the sample stage. Geometrically, at least two ion sources emit ion beams that cover the processing area of the sample stage. At least one ion source is connected to the vacuum chamber via a mechanical rotating structure for dynamic adjustment of its emission angle. During vacuum etching, control parameters and emission angles for at least two ion sources are set to control the emission of ion beams towards the processing area above the sample stage, thus etching the sample. This technical solution, by controlling the emission angles of multiple ion sources and adjusting the ion beam incident angle and energy level, can precisely control the etching angle and morphology, significantly improving the flexibility and stability of the etching process.
[0028] Furthermore, by using different grid materials for different ion sources and introducing differentiated working gases, the gas compatibility of the etching process can be improved, metal contamination on the surface of the processed sample can be avoided, and the grid lifespan can be extended.
[0029] Furthermore, the sample stage employs a motion support, telescopic structure, pitch structure, and swing structure, which enables multi-dimensional adjustment of the position and angle of the sample stage. Combined with the rotation function of the ion source, it can achieve large-angle incident etching within a limited mechanical motion range, flexibly control the etching tilt angle, meet the processing requirements of complex three-dimensional structures, and is suitable for tilt etching of large-size samples.
[0030] Additional aspects and advantages of this application will be set forth in part in the description which follows, and will become apparent from the description or may be learned by practice of this application. Attached Figure Description
[0031] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein:
[0032] Figure 1 This is a schematic diagram of an example vacuum etching machine based on a multi-ion source;
[0033] Figure 2 This is a schematic diagram of an example ion source installation structure;
[0034] Figure 3 Here is another example of an ion source installation structure diagram;
[0035] Figure 4 This is a schematic diagram of the installation structure of an example sample stage;
[0036] Figure 5 This is a schematic diagram of the electrical structure of a vacuum etching machine based on a multi-ion source, according to one embodiment. Detailed Implementation
[0037] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.
[0038] Those skilled in the art will understand that, unless otherwise stated, the singular forms “a,” “an,” “the,” and “the” used herein may also include the plural forms. It should be further understood that the word “comprising” as used in this application’s specification means the presence of the stated feature, integer, step, or operation, but does not preclude the presence or addition of one or more other features, integers, steps, or operations.
[0039] refer to Figure 1 As shown, Figure 1 This is a schematic diagram of an example vacuum etching machine based on multiple ion sources. It mainly includes a vacuum chamber, multiple ion sources, and a sample stage. The sample stage is installed at a designated position within the vacuum chamber to hold the sample to be etched. Multiple ion sources (1 to n) are distributed at various locations within the vacuum chamber. For ease of description, this embodiment uses two ion sources as an example: ion source A and ion source B. It should be noted that the vacuum etching machine also includes other components not shown in the diagram, such as a neutralizer. In this embodiment, a single neutralizer is used. The neutralizer's function is to neutralize the space charge inside the vacuum chamber, ensuring stable beam current and etching effect during the etching process.
[0040] In the vacuum etching machine of this embodiment, the emission direction of each ion source points towards the processing area above the sample stage, and geometrically, the ion beam regions emitted by at least two ion sources cover the processing area of the sample stage; such as Figure 1 As shown in the figure, ion source A and ion source B point upwards towards the sample stage, that is, above the processing area on the side where the sample (shaded area) is placed, thus enabling multiple ion sources to work together for etching.
[0041] like Figure 1 As shown, in the vacuum etching machine of this embodiment, at least one ion source is connected to the vacuum chamber through a mechanical rotating structure 01. Taking ion source B in the figure as an example, by dynamically adjusting the emission angle of ion source B, the ion beams emitted by ion source A and ion source B can form different incident angles and dynamically adjustable action areas on the sample. For example, ion source A and ion source B can act on the plane and sidewall of the sample simultaneously during the etching process.
[0042] For example, the rotation range of the mechanical rotating structure 01 can be ±45° to ±90° to meet the requirements of different process stages for the ion incident direction; when the rotation angle is 0°, ion source A and ion source B emit ion beams at the same angle to act on the plane of the sample.
[0043] During vacuum etching, control parameters and emission angles for at least two ion sources are set to control the ion sources to emit ion beams towards the processing area above the sample stage, thereby etching the sample; for example... Figure 1 In this case, if ion source A has a fixed tilt angle, the angle of the emitted ion beam can be adjusted by the mechanical rotation structure O1 of ion source B, thereby forming a dynamically adjustable incident angle on the sample and achieving an adjustable coverage range; for example... Figure 2 As shown, Figure 2 This is a schematic diagram of an example ion source installation structure. If both ion source A and ion source B are equipped with mechanical rotating structures 01, a larger dynamic adjustment of the incident angle and an adjustable effective area can be achieved; for example... Figure 3 As shown, Figure 3 This is another example of an ion source installation structure diagram. The diagram uses three ion sources, namely ion source A, ion source B and ion source C. All three ion sources are equipped with a mechanical rotating structure 01, which can achieve a larger dynamically adjustable coverage range.
[0044] For example, in the vacuum etching machine based on multiple ion sources of this application, the ion source type may include radio frequency ion source, Hall ion source, Kaufman ion source, etc.
[0045] As described in the above embodiments, by controlling the emission angle of multiple ion sources and adjusting the incident angle and energy of the ion beam, the sample can be scanned and moved within the effective area of multiple ion beams. This effectively eliminates the uneven edge etching caused by ion beam divergence, precisely controls the etching angle and morphology, ensures the uniformity of etching of large-area samples, and significantly improves the flexibility and stability of the etching process.
[0046] In some embodiments, the multi-ion source-based vacuum etching machine of this application, as referenced Figure 4 As shown, Figure 4 This is a schematic diagram of the installation structure of an example sample stage, which is installed at a set position in the vacuum chamber via a motion bracket 11; wherein, the motion bracket 11 is used to move the sample stage within a predetermined area inside the vacuum chamber.
[0047] Specifically, the sample stage can move within a predetermined area inside the vacuum chamber via the motion support 11. For example, the motion support 11 can be a linear module, allowing the sample stage to move linearly within the vacuum chamber; the motion support can be an xy-plane motion structure, allowing the sample stage to move planarly within the vacuum chamber; or the motion support can be a three-dimensional motion platform, allowing the sample stage to move in three-dimensional space within the vacuum chamber.
[0048] In some embodiments, the sample stage can further be connected to the motion support via a telescopic structure 12; wherein the telescopic structure 12 is used to push the sample stage to move back and forth.
[0049] Specifically, the sample stage can be controlled to move forward and backward via the telescopic structure 12, thereby adjusting the distance between it and the ion source, and thus controlling the size of the ion beam coverage area and the energy level.
[0050] In some embodiments, the sample stage can further be connected to the motion support via a pitch structure 13; wherein the pitch structure 13 is used to tilt the sample stage.
[0051] Specifically, the sample stage can be tilted (tilted) around the horizontal axis through the pitch structure 13. The tilt function can change the ion beam incident angle to achieve tilt etching to control the sidewall angle.
[0052] In some embodiments, the sample stage can further be connected to the motion support via a swing structure 14; wherein the swing structure 14 is used to adjust the swing of the sample stage.
[0053] Specifically, the sample stage can be adjusted by the swing structure 14, generally by a small amplitude swing. The swing function can continuously change the incident direction during the processing, reducing the etching grooves or uneven micro-roughness caused by the single direction of the ion beam.
[0054] The vacuum etching machine described in the above embodiments, through the coordinated design of multiple ion source configurations, adjustable ion source angles, and multi-degree-of-freedom motion of the sample stage, achieves a significant improvement in etching angle, uniformity, and process flexibility. The moving support allows the sample stage to perform scanning etching within the effective range of multiple ion sources, maintaining etching uniformity when processing large-area samples and avoiding localized over-etching or excessive temperature rise caused by prolonged bombardment of a single point. Simultaneously, it allows for precise adjustment of the ion beam working distance to match the divergence characteristics and energy distribution of different ion sources. The ion source achieves dynamic adjustment of the incident angle through a mechanical rotating structure 01, meeting the requirements of different process stages for ion incident direction. Combined with the extension, tilting, and oscillation functions of the sample stage, it can change the ion beam incident angle, achieving tilted etching to control the sidewall angle. Continuously changing the incident direction during processing reduces etching grooves or micro-roughness unevenness caused by a single ion beam direction. Thus, large-angle incident processing can be achieved within a limited sample stage movement range, meeting the processing needs of complex three-dimensional structures, and is particularly suitable for tilted etching and sidewall deposition removal processes for large-size samples.
[0055] In some embodiments, in the multi-ion source-based vacuum etching machine of this application, at least two ion sources are turned on synchronously or asynchronously, and work synchronously or in stages during vacuum etching.
[0056] Specifically, by simultaneously activating ion source A and ion source B to generate corresponding ion beams, the superposition of different ion types, ion energies, and ion densities can be achieved. This enables the main etching reaction and deposition removal reaction to be carried out in the same process, improving the etching rate and surface and sidewall quality. It also controls the sample to reciprocate within the ion beam regions of the two ion sources, ensuring uniform ion action on the processed surface. Simultaneously activating ion source A and ion source B to generate corresponding ion beams allows for an integrated multi-step processing flow, avoiding sample transfer between different devices. It can efficiently process the etching of multilayer composite samples and materials, or directly perform resist removal and surface cleaning after etching. This improves process continuity and stability, and reduces the risk of contamination and process interruption.
[0057] The vacuum etching machine described in the above embodiment supports low-energy fine etching and ALE-type processing. By introducing different ion sources in stages and directions under low-energy conditions, it can achieve functions such as layer-by-layer removal and surface activation, achieving a fine control effect similar to atomic layer etching (ALE), and significantly improving the consistency and repeatability of etching depth and morphology.
[0058] In some embodiments, the multi-ion source-based vacuum etching machine of this application has at least two of the ion sources whose ion beams are adjusted to form overlapping, intersecting, or independent coverage areas in the processing region of the sample.
[0059] Specifically, through the movement of the multi-ion source, multi-degree-of-freedom sample stage, the sample stage can move freely inside the vacuum etching machine, such as moving towards or away from the ion source. The emission angle of the ion source can also be adjusted, so that multiple ion beams can overlap, intersect, or be independent in the sample's action area. Whether it is adjusting the size of the ion beam action area, the ion beam incident angle, or the energy level, it can be freely adjusted according to the process requirements, thereby meeting more etching process needs.
[0060] The working gas introduced into the ion source generally includes one or more of the following: reactive gases corresponding to the grid, such as oxygen corresponding to molybdenum grids and fluorine-based gases corresponding to graphite grids; inert gases, such as argon (Ar) and xenon (Xe); and general gases that do not react with the grid (such as nitrogen and ammonia).
[0061] In some embodiments, in order to achieve better matching between the grid material and the working gas, the vacuum etching machine based on multiple ion sources of this application is configured with grids of different materials in at least two ion sources; wherein, the ion sources are supplied with etching gas that matches the grid material; for example, the ion source uses a molybdenum grid and is supplied with fluorine-based gas, or the ion source uses a graphite grid and is supplied with oxygen.
[0062] Specifically, the type of etching gas that can be used is limited by the material of the ion source grid. For example, molybdenum grids are prone to chemical corrosion and physical sputtering in fluorine-based gas environments, shortening grid life and potentially causing metal contamination on the surface of the processed sample. Graphite grids, on the other hand, have a short lifespan in oxygen ion environments and are difficult to operate stably for extended periods, which is particularly disadvantageous for processes that simultaneously introduce oxygen and fluorine-based gases into the etching reaction. By configuring grids of different materials in the ion source and matching working gases—for example, one ion source using a molybdenum grid and introducing fluorine-based gas, suitable for high-energy reactive etching; and another ion source using a graphite grid and introducing oxygen, suitable for removing sidewall deposits containing carbon or organic matter—gas compatibility and process flexibility can be improved. This allows for the simultaneous use of multiple etching gases, such as fluorine-based gases and oxygen, in the same process, effectively extending grid life and reducing the risk of metal contamination.
[0063] In one embodiment, reference Figure 5 As shown, Figure 5This is a schematic diagram of the electrical structure of a vacuum etching machine based on a multi-ion source according to one embodiment. The vacuum etching machine based on a multi-ion source of this application also includes a control system. The figure shows some of the electrical structures related to this application. The mechanical rotation structure 01, the motion support 11, the telescopic structure 12, the pitch structure 13, and the swing structure 14 are all driven by built-in drive motors. The control system is connected to each ion source and its mechanical rotation structure 01, as well as the drive motors built into the motion support 11, telescopic structure 12, pitch structure 13, and swing structure 14 of the sample stage, to achieve precise control of the ion source to emit the ion beam and to each drive motor.
[0064] In summary, the vacuum etching machines in the above embodiments, through multi-ion sources, multi-degree-of-freedom sample stage movement and differentiated gas configuration, have good gas compatibility, high sidewall deposition removal efficiency, strong tilt angle control capability, and can achieve low-energy fine etching. They can achieve large-area uniform etching, directional removal of deposits, and precise control of etching angle and morphology in the same system, significantly improving the flexibility and stability of the etching process.
[0065] To better illustrate the technical solution of the vacuum etching machine based on multiple ion sources in this application, several application examples are given below, using dual ion sources as an example.
[0066] Example 1:
[0067] The process employing a dual-ion-source, identical formulation increases the etching rate, reduces gate damage, improves etching capacity, and extends maintenance cycles. The etching process is as follows:
[0068] (1) Introduce the same type of working gas (such as argon, fluorine-based gas, etc.) into ion source A and ion source B at the same time, and adjust the gas flow rate to the set value.
[0069] (2) Apply the same discharge power and accelerating voltage to ion source A and ion source B to generate ion beams with the same energy and direction.
[0070] (3) The ion beams accelerated by the grid overlap or expand on the sample surface to form a stable and uniform dual-beam processing area.
[0071] (4) Drive the sample stage to move back and forth in the front and back direction to scan the sample in the dual ion beam region, thereby obtaining a large area of uniform etching.
[0072] (5) By adjusting the working distance of the sample stage, the energy distribution of the ion beam is ensured to be consistent throughout the entire processing area.
[0073] (6) The tilt and swing of the sample stage can be controlled synchronously according to process requirements to adjust the incident angle and improve the sidewall etching characteristics.
[0074] (7) Stop the discharge of ion source A and ion source B, and shut off the gas supply.
[0075] (8) Restore the vacuum chamber to normal pressure and remove the processed sample.
[0076] In the technical solution of Example 1, when ion source A and ion source B are configured identically, the two ion sources work synergistically in the same region, effectively enhancing the ion current density. Compared to a single ion source, this process can: achieve a higher etching rate within the same processing time; achieve a more uniform etching effect on large-area samples; and reduce localized heat load and grid loss caused by prolonged operation of the ion source, thereby improving system lifespan and stability.
[0077] Example 2:
[0078] The dual ion source operates under different gases and energies, and the etching process is as follows:
[0079] (1) Ion source A is introduced with a first gas, which can be one or more of the following: argon, nitrogen, oxygen, trifluoromethane, sulfur hexafluoride, carbon tetrafluoride, oxygen, and hydrogen. The type of ion source, grid type, ionization radio frequency power, and extraction system parameters can be freely set according to process requirements.
[0080] (2) Ion source B is introduced with a second gas, which can be one or more of the following: argon, nitrogen, oxygen, trifluoromethane, sulfur hexafluoride, carbon tetrafluoride, oxygen, and hydrogen. The type of ion source, grid type, ionization radio frequency power, and extraction system parameters can be freely set according to process requirements.
[0081] (3) The first gas and the second gas can be the same or different, and are preferably complementary reaction gases.
[0082] (4) Ion source A and ion source B are turned on synchronously or asynchronously to generate corresponding ion beams respectively.
[0083] (5) Control the sample to scan back and forth in the ion beam regions of the two ion sources to ensure that the processed surface is uniformly affected by ions.
[0084] (6) By superimposing different ion types, ion energies and ion densities, the main etching reaction and deposition removal reaction can be achieved in the same process, thereby improving the etching rate and surface and sidewall quality.
[0085] The technical solution in Example 2 can facilitate the removal of sidewall deposits and reduce the time required for switching process gases in ion source etching.
[0086] Example 3:
[0087] Multiple ion sources operate at different angles, and the etching process is as follows:
[0088] (1) Ion source A is set to vertical incidence to provide the main etching direction; ion source B is set to inclined incidence, and the incidence angle can be adjusted between 0° and ±90°.
[0089] (2) During the sample stage scanning process, two beams of ions act on the surface and sidewall respectively.
[0090] (3) The tilted ion beam can directionally remove sidewall deposits and improve the accuracy of the etching profile.
[0091] (4) Maintain high vertical etching capacity while using oblique incidence to remove sidewall deposits.
[0092] The technical solution in Example 3 can achieve a high aspect ratio structure while ensuring the smoothness of the sidewalls and the control of the tilt angle.
[0093] Example 4:
[0094] Two or more ion sources operate in stages, and the etching process is as follows:
[0095] (1) Set up ion source A and ion source B in the vacuum chamber, ensuring that both are within the range that the sample stage can cover.
[0096] (2) Step 1: Turn on ion source A, and keep ion source B in standby or off state. Ion source A generates an ion beam to perform the first stage of processing on the sample, such as etching the first layer of material or performing pre-cleaning; after the first stage is completed, turn off ion source A.
[0097] (3) Second step: Start ion source B, while ion source A is in standby or off state. Ion source B generates an ion beam to perform a second stage of processing on the sample, such as etching the second layer of material, removing residual deposits, or performing photoresist ashing.
[0098] (4) Depending on the process requirements, the first and second steps can be repeated alternately until the process is completed. The technical solution in Example 4 realizes an integrated multi-step processing flow, avoiding the transfer of samples between different devices; it can efficiently process the etching of multi-layer composite samples and materials, or directly perform resist removal and surface cleaning after etching; it improves process continuity and stability, and reduces the risk of contamination and process interruption.
[0099] Example 5:
[0100] The etching process for using a single ion source independently is as follows:
[0101] (1) During a process, only one of ion source A or ion source B is activated, while the other is kept in standby or off.
[0102] (2) Select ion source A or ion source B according to the process requirements of the sample to be processed;
[0103] (3) Single-source output ion beam is used to etch, modify the surface, polish, ashing or clean the sample.
[0104] (4) After completion, turn off the ion source and end the process.
[0105] The technical solution in Example 5 ensures simple operation of the equipment under a single process condition, avoids frequent changes to the ion source grid or gas type, improves production efficiency, saves equipment floor space, and enhances the adaptability and scalability of the system.
[0106] It will be understood by those skilled in the art that, unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains. It should also be understood that terms such as those defined in general dictionaries should be understood to have the same meaning as in the context of the prior art, and should not be interpreted in an idealized or overly formal sense unless specifically defined as herein.
[0107] The above description is only a partial embodiment of this application. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of this application, and these improvements and modifications should also be considered within the scope of protection of this application.
Claims
1. A vacuum etching machine based on a multi-ion source, characterized in that, include: Vacuum chamber, multiple ion sources, and sample stage; The sample stage is installed at a set position in the vacuum chamber to hold the sample that needs to be etched; Each of the ion sources is distributed and disposed at multiple locations inside the vacuum chamber; The emission direction of each of the ion sources is directed toward the processing area above the sample stage, and in terms of geometric layout, the ion beam regions emitted by at least two of the ion sources cover the processing area of the sample stage. At least one of the ion sources is connected to the vacuum chamber via a mechanical rotating structure for dynamically adjusting the emission angle of the ion source; During vacuum etching, control parameters and emission angles of at least two ion sources are set in the etching process to control the ion sources to emit ion beams toward the processing area above the sample stage to etch the sample.
2. The vacuum etching machine based on a multi-ion source according to claim 1, characterized in that, At least two of the ion sources are turned on synchronously or asynchronously, and operate synchronously or in stages during vacuum etching.
3. The vacuum etching machine based on a multi-ion source according to claim 1, characterized in that, The ion beams emitted by at least two of the ion sources are tuned to form overlapping, intersecting, or independent coverage areas in the processing region of the sample.
4. The vacuum etching machine based on a multi-ion source according to claim 1, characterized in that, At least two of the ion sources are configured with grids of different materials; The ion source is supplied with an etching gas that matches the grid material.
5. The vacuum etching machine based on a multi-ion source according to claim 1, characterized in that, The ion source types include: radio frequency ion source, Hall ion source, and Kaufman ion source. The ion source uses a molybdenum grid and is supplied with fluorine-based gas, or the ion source uses a graphite grid and is supplied with oxygen.
6. The vacuum etching machine based on a multi-ion source according to claim 1, characterized in that, The sample stage is installed at a set position in the vacuum chamber via a motion bracket; The motion support is used to move the sample stage within a predetermined area inside the vacuum chamber.
7. The vacuum etching machine based on a multi-ion source according to claim 6, characterized in that, The sample stage is connected to the motion support via a telescopic structure; The telescopic structure is used to move the sample stage back and forth.
8. The vacuum etching machine based on a multi-ion source according to claim 7, characterized in that, The sample stage is connected to the motion support via a pitch structure; The pitch structure is used to adjust the tilt of the sample stage.
9. The vacuum etching machine based on a multi-ion source according to claim 7, characterized in that, The sample stage is connected to the motion support via a swing structure; The swing structure is used to adjust the swing of the sample stage.
10. The vacuum etching machine based on a multi-ion source according to any one of claims 1-9, characterized in that, Also includes: The control system is connected to the drive motors built into the motion support, telescopic structure, pitching structure, and swinging structure of each ion source and its mechanical rotation structure, and / or the sample stage.