Electronic device
By using a doubly-fed co-radiation stub scheme and tuning circuit, the insertion loss problem caused by single-fed co-radiation stubs was solved, achieving space saving and performance improvement, especially in improving radiation performance in the N78 band.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- BEIJING XIAOMI MOBILE SOFTWARE CO LTD
- Filing Date
- 2025-06-12
- Publication Date
- 2026-07-31
AI Technical Summary
In 5G mobile phones, although the single-feed common-radiation stub method saves space, it increases the number of combiners, leading to insertion loss and affecting antenna efficiency.
A doubly fed common radiation stub scheme is adopted, in which the first frame radiator is excited by the first and second feeds to cover different frequency bands. Combined with the tuning circuit and resonant circuit, the combiner is reduced, and crosstalk and insertion loss are reduced.
The simplified combiner reduces antenna insertion loss, saves space, improves radiation performance in the first and second frequency bands, and enhances the performance of the N78 band by about 2dB.
Smart Images
Figure CN224582494U_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of terminal technology, and more particularly to an electronic device. Background Technology
[0002] With the widespread adoption of 5G smartphones, the number of antennas in mobile terminals has increased dramatically, and antenna layout space is becoming increasingly compact. In related technologies, multi-band coverage can be achieved through single-fed co-radiating stubs, for example, covering both low-frequency and 5G bands.
[0003] However, while this technical solution is advantageous for saving space, it requires the addition of a combiner at the front end of the RF link, which can easily cause insertion loss and affect antenna efficiency. Utility Model Content
[0004] This disclosure provides an electronic device to address the shortcomings of the related art.
[0005] According to embodiments of this disclosure, an electronic device is provided, comprising:
[0006] A first border radiator, the first border radiator including a first top border point;
[0007] First power supply;
[0008] The second power supply is electrically connected to the first upper frame point, and both the first and second power supplies are electrically connected to the first upper frame point.
[0009] Wherein, the first power supply excites the first frame radiator to cover a first frequency band, the second power supply excites the first frame radiator to cover a second frequency band, and the frequency of the signal in the second frequency band is greater than the frequency of the signal in the first frequency band.
[0010] Optionally, it also includes a motherboard and a metal spring that is electrically connected to the first upper frame. The motherboard is spaced apart from the first frame radiator. The first power supply and the second power supply are both located on the motherboard and are electrically connected to the first frame radiator through the metal spring. The second power supply is located on the edge of the motherboard near the first frame radiator.
[0011] Optionally, the second power supply and the metal spring are located on the same layer of the motherboard, the second power supply is located on one side of the metal spring, and the second power supply and the metal spring form the shortest current path trace.
[0012] Optionally, the second power supply is located at the bottom layer of the motherboard, and the first power supply is located at the top layer of the motherboard.
[0013] Optionally, it also includes a tuning circuit, which is electrically connected between the first feed and the first upper frame point, and is arranged in parallel with the first feed;
[0014] The tuning circuit is located on the motherboard, with the extension direction of the metal spring serving as the boundary, and the first power supply and the tuning circuit are on different sides.
[0015] Optionally, it also includes a first resonant circuit and a second resonant circuit, wherein the first resonant circuit is electrically connected between the first upper frame point and the first feed, and the second resonant circuit is electrically connected between the first upper frame point and the second feed.
[0016] The first resonant circuit and the second resonant circuit are connected in parallel and both are directly connected to the first upper frame point. The first resonant circuit is equivalent to an open circuit for the second frequency band, and the second resonant circuit is equivalent to an open circuit for the first frequency band signal and its higher-order mode signals.
[0017] Optionally, it also includes a first inductor and a first capacitor. The first inductor is connected in series between the first resonant circuit and the first power supply. One end of the first capacitor is grounded, and the other end is electrically connected between the first inductor and the first resonant circuit. The first inductor is equivalent to an open circuit for the second frequency band, and the first capacitor is equivalent to a short circuit for the second frequency band.
[0018] Optionally, the resonant frequency of the second resonant circuit is located within the frequency range of the second frequency band; and / or
[0019] The first frequency band includes a first low frequency band and a second low frequency band. The 1 / 4 wavelength mode of the first frame radiator resonates in the first low frequency band, and the resonant frequency of the first resonant circuit is located within the frequency range of the second low frequency band.
[0020] Optional, also includes:
[0021] The second frame radiator covers the third frequency band and cooperates with the first frame radiator to form a gap. The third frequency band is different from the first frequency band and the second frequency band. The third frame radiator includes a second upper frame point and a third upper frame point.
[0022] The third power supply is electrically connected to the second upper frame point;
[0023] First switch;
[0024] The second capacitor is connected in series with the first switch, and the first switch switches the conduction state between the third upper frame point and the second capacitor.
[0025] When the second power supply is in the working state, the first switch is closed, and the resonant frequency of the ring resonant mode formed between the first upper frame point and the third upper frame point is outside the second frequency band or the first frequency band.
[0026] Optionally, it also includes a second switch and a second inductor, the second switch switching the connection between the first upper frame point, the second inductor and the ground;
[0027] When the second frame radiator radiates the third frequency band, the second switch is closed, and the resonant frequency of the λ resonant mode of the entire arm of the first frame radiator and the second frame radiator is located outside the band of the third frequency band.
[0028] The technical solutions provided by the embodiments of this disclosure may include the following beneficial effects:
[0029] As can be seen from the above embodiments, the first and second frequency bands of this disclosure adopt a dual-fed common-radiation stub scheme, which can simplify the combiner, reduce antenna insertion loss, reduce costs, save space, and improve the radiation performance of the first and second frequency bands compared to the common-fed common-radiation stub scheme.
[0030] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure. Attached Figure Description
[0031] The accompanying drawings, which are incorporated in and form a part of this specification, illustrate embodiments consistent with this disclosure and, together with the description, serve to explain the principles of this disclosure.
[0032] Figure 1 This is a partial schematic diagram of an electronic device according to an exemplary embodiment.
[0033] Figure 2 This is a comparative table of radiation benefits of an electronic device in the N78 band, according to an exemplary embodiment.
[0034] Figure 3 This is a topology diagram of an electronic device according to an exemplary embodiment.
[0035] Figure 4 This is another topology diagram of an electronic device according to an exemplary embodiment.
[0036] Figure 5 This is a graph showing the radiation efficiency of the N78 band of a tuning circuit in various switching combinations, according to an exemplary embodiment.
[0037] Figure 6 This is a schematic diagram of the current distribution of a first frame radiator and a second frame radiator according to an exemplary embodiment.
[0038] Figure 7 This is a radiation efficiency curve of the N78 band when different first capacitors are connected via a first switch, according to an exemplary embodiment.
[0039] Figure 8 This is a schematic diagram of another current distribution of the first and second frame radiators according to an exemplary embodiment.
[0040] Figure 9 This is a radiation efficiency curve of the third frequency band when different second inductors are connected via a second switch, according to an exemplary embodiment. Detailed Implementation
[0041] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numerals in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this disclosure. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this disclosure as detailed in the appended claims.
[0042] The terminology used in this disclosure is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The singular forms “a,” “the,” and “the” as used in this disclosure and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used herein refers to and includes any and all possible combinations of one or more of the associated listed items.
[0043] It should be understood that although the terms first, second, third, etc., may be used in this disclosure to describe various information, such information should not be limited to these terms. These terms are used only to distinguish information of the same type from one another. For example, without departing from the scope of this disclosure, first information may also be referred to as second information, and similarly, second information may also be referred to as first information. Depending on the context, the word "if" as used herein may be interpreted as "when," "when," or "in response to determination."
[0044] Figure 1 This is a partial schematic diagram of an electronic device according to an exemplary embodiment, such as... Figure 1As shown, the electronic device may include a first power supply 1, a second power supply 2, a first frame radiator 3, and a motherboard 4. The first frame radiator 3 can be the side frame, top frame, or corner frame of the electronic device. The motherboard 4 is located inside the first frame radiator 3, and both the first power supply 1 and the second power supply 2 are mounted on the motherboard 4. The first frame radiator 3 includes a first upper frame point 31. The first power supply 1 and the second power supply 2 are electrically connected to the first upper frame point 31. The first power supply 1 excites the first frame radiator 3 to cover a first frequency band, and the second power supply 2 excites the first frame radiator 3 to cover a second frequency band. The frequency range of the first frequency band is different from the frequency range of the second frequency band. For example, the first frequency band may include the LB (Low Band) frequency band, and the second frequency band may include the 5G frequency band. This enables the co-radiating stub design of the LC frequency band and the 5G frequency band. At the same time, the first and second frequency bands adopt a dual-fed co-radiating stub scheme, which can simplify the combiner, reduce antenna insertion loss, reduce costs, save space, and improve the radiation performance of the first and second frequency bands compared to the common-fed co-radiating stub scheme.
[0045] Taking a first frame radiator 3 with a length of 42mm and its 1 / 4 wavelength resonant mode resonating in the B8 frequency band as an example, this first frame radiator 3 can be switched within the B5, B8, and B28 frequency bands through a tuning circuit. Simultaneously, the excitation of the second feed 2 can cause the first frame radiator 3 to radiate in the N78 frequency band. Figure 2 As shown, the peak performance of the N78 band is compared under various test scenarios using the common-feed common-radiation stub scheme and the doubly-feed common-radiation stub scheme. It can be seen that by adopting the technical solution disclosed in this paper, the performance of the N78 band can be improved by about 2dB, which has a significant performance benefit.
[0046] In some embodiments, still using Figure 1 As shown, the motherboard 4 and the first frame radiator 3 are spaced apart, with the motherboard 4 located inside the first frame radiator 3. This spacing creates a clearance environment for the antenna. The electronic device also includes a metal spring 5, which can be electrically connected to the first upper frame point 31 and the motherboard 4 respectively. The metal spring 5 can be connected to the first feed 1 and the second feed 2 via internal traces on the motherboard 4, thus facilitating circuit layout. For example, the second feed 2 can be located on the bottom layer of the motherboard 4, and the first feed 1 can be located on the bottom layer of the motherboard 4. Multiple layers of the motherboard 4 can be used to separate the two, reducing crosstalk between them.
[0047] Furthermore, the frequency range of the second frequency band is significantly larger than that of the first frequency band, and the wavelength of the second frequency band is relatively shorter, making it more sensitive to the influence of the surrounding environment. Therefore, in order to reduce the impact of surrounding components on the performance of the second frequency band, the second power supply 2 is located at the edge of the motherboard 4 near the first frame radiator 3. This improves the clearance environment and is beneficial to improving the radiation performance of the second frequency band. Similarly, if there is sufficient space on the motherboard 4, the first power supply 1 can also be located near the edge of the motherboard 4. Of course, in some other embodiments, since the frequency of the first frequency band is relatively low and the wavelength is relatively long, its sensitivity to the surrounding environment is relatively low. Therefore, the first power supply 1 can also be located closer to the interior of the motherboard 4 than the second power supply 2.
[0048] The second power supply 2 and the metal spring 5 can be located on the same layer as the motherboard 4, with the second power supply 2 situated to one side of the metal spring 5. The shortest current path routing exists between the second power supply 2 and the metal spring 5, meaning the current flow between them is linear. This helps reduce parasitic effects introduced by the traces at the motherboard 4 end, improving the radiation performance of the second frequency band. Furthermore, a matching circuit can be installed between the second power supply 2 and the metal spring 5. Physically, this matching circuit can be positioned between the second power supply 2 and the metal spring 5, allowing for the shortest current path routing between them.
[0049] In some embodiments, such as Figure 3 As shown, the electronic device also includes a tuning circuit 6, which is electrically connected between the first feed 1 and the first upper frame point 31. The tuning circuit 6 is connected in parallel with the first feed 1. Subsequently, by switching the state of the tuning circuit 6, the first frame radiator 3 can switch between sub-bands within the first frequency band. For example, taking the first frequency band as a low-frequency band, the first frame radiator 3, under the excitation of the first feed 1, can switch between the B5, B8, and B28 frequency bands by switching the state of the tuning circuit 6. The tuning circuit 6 is disposed on the motherboard 4, and the first feed 1 and the tuning circuit 6 are disposed on different sides of the metal spring 5, with the extension direction of the metal spring 5 as the boundary. Figure 1 As shown, the first power supply 1 is located above the boundary of the extension direction of the metal spring 5, and the tuning circuit 6 is located below the boundary of the extension direction of the metal spring 5. This can reduce the parasitic effect of the traces on the main board 4 of the tuning circuit 6 on the first power supply 1, which is beneficial to improving the radiation performance of the first frequency band.
[0050] For example, such as Figure 4As shown, the tuning circuit 6 can include multiple switching states. By combining multiple switching states, various switching states can be achieved, which is beneficial to expanding the coverage range of the first frame radiator 3 in the first frequency band.
[0051] In the above embodiments, such as Figure 3 and Figure 4 As shown, the electronic device also includes a first resonant circuit 7 and a second resonant circuit 8. The first resonant circuit 7 is electrically connected between the first upper frame point 31 and the first feed 1. The tuning circuit 6 can be grounded at one end and electrically connected between the first feed 2 and the first resonant circuit 7 at the other end. The second resonant circuit 8 is electrically connected between the first upper frame point 31 and the second feed 2. The first resonant circuit 7 and the second resonant circuit 8 are connected in parallel and both are directly connected to the first upper frame point 31, meaning that no other electronic components are placed on the path from the first upper frame point 31 to the first resonant circuit 7 and the second resonant circuit 8. The first resonant circuit 7 is equivalent to an open circuit for the second frequency band. Thus, after the second feed 2 emits a signal, the signal can be transmitted to the first frame radiator 3 as much as possible through the obstruction of the first resonant circuit 7, while reducing the crosstalk caused by the second feed 2 to the first feed 1. Similarly, the second resonant circuit 8 is equivalent to an open circuit for the first frequency band and its higher-order mode signals.
[0052] Thus, after the first feed 1 emits a signal, it is blocked by the second resonant circuit 8, allowing the signal emitted by the first feed 1 to be transmitted to the first frame radiator 3 as much as possible, while reducing crosstalk caused by the first feed 1 to the second feed 1. Of course, the design of the first resonant circuit 7 needs to ensure that the first frequency band can pass through, and the design of the second resonant circuit 8 needs to ensure that the second frequency band can pass through. Since the frequency of the first frequency band is lower than the frequency of the second frequency band, the higher-order modes of the first frequency band may fall within the frequency range of the second frequency band. The blocking by the second resonant circuit 8 can reduce the influence of these higher-order modes.
[0053] Based on the design of the first resonant circuit 7 and the second resonant circuit 8, crosstalk between the two antennas is reduced, such as... Figure 5 As shown, with the first frequency band as the low-frequency band and the second frequency band as the N78 frequency band, the tuning circuit 6 includes four switches: RF1, RF2, RF3, and RF4. Low-frequency tuning can be achieved by combining these four switches. Figure 5The graph shows the radiation efficiency curves of the N78 band under five states: RF1, RF2, RF3, and RF4 all off; RF1, RF2, RF3 on, RF4 off; RF2 and RF3 on, RF1 and RF4 off; RF1 and RF4 on, RF2 and RF4 off; and RF3 on, RF1, RF2, and RF4 off. Referring to the five curves, it can be seen that when the tuning circuit 6 on the first feed 1 switches to achieve frequency modulation, the impact on the performance of the N78 band is within 0.5 dB. That is, when the first radiator 3 radiates the B8, B5, and B28 bands, the N78 band can always maintain a good radiation state, achieving consistent performance in both the low-frequency band and the N78 band.
[0054] In some embodiments, the resonant frequency of the second resonant circuit 8 can be located within the frequency range of the second frequency band, thereby blocking higher-order modes of the first frequency band and reducing their impact. For example, such as Figure 4 As shown, the electronic device also includes a second frame radiator 9 and a third feed 10. The second frame radiator 9 cooperates with the first frame radiator 3 to form a gap. The second frame radiator 9 is suspended, which helps to achieve SAR detection. The second frame radiator 9 includes a second upper frame point 91, which is electrically connected to the third feed 10.
[0055] When the second frequency band is the N78 band, the N78 band is radiated through the stub between the first upper frame point 31 and the free end. Because the N78 band has a high frequency and the antenna stub is short, therefore... Figure 6 As shown, it will be affected by the ring mode resonance mode between the first upper frame point 31 and the second upper frame point 91. Based on this effect, as follows Figure 7 As shown, the radiation efficiency of the N78 band is relatively low in the range of 3300MHz-3500MHz. Therefore, the resonant frequency of the second resonant circuit 8 can be defined around 3400MHz to minimize the signal influence caused by the first band in the range of 3300MHz-3500MHz and compensate for the radiation performance of the N78 band in the range of 3300MHz-3500MHz.
[0056] Similarly, the first frequency band may include a first low-frequency band and a second low-frequency band. The quarter-wavelength mode of the first frame radiator 3 resonates in the first low-frequency band. Since there is a frequency difference between the first and second low-frequency bands, the required length of the radiating stubs differs. When radiating the second low-frequency band using the quarter-wavelength mode resonating in the first low-frequency band, the performance of the second low-frequency band will be relatively weaker. Therefore, the resonant frequency of the first resonant circuit 7 is located within the frequency range of the second low-frequency band to minimize crosstalk and compensate for its performance degradation. For example, if the quarter-wavelength mode of the first frame radiator 3 resonates in the B8 band, it will cause a performance degradation in the B28 band. Therefore, the resonant frequency of the first resonant circuit 7 can be designed within the range of the B28 band to compensate for the low performance of the B28 band.
[0057] Furthermore, since the first frequency band has a low frequency and narrow bandwidth, and the design of the first resonant circuit 7 may further narrow the bandwidth, the electronic device also includes a low-pass filter circuit. The low-pass filter circuit is located between the first power supply 1 and the first upper frame point 31. In this way, the design of the low-pass filter circuit can further block the high-frequency signals of the second frequency band, which is beneficial to expanding the bandwidth of the first frequency band. At the same time, the electronic component design of the low-pass filter circuit can play a preliminary matching role for the first frequency band.
[0058] For example, such as Figure 4 As shown, the low-pass filter circuit may include a first inductor 11 and a first capacitor 12. The first inductor 11 is connected in series between the first resonant circuit 7 and the first feed 1. One end of the first capacitor 12 is grounded, and the other end is electrically connected between the first inductor 11 and the first resonant circuit 7. The first inductor 11 is equivalent to an open circuit for the second frequency band, and the first capacitor 12 is equivalent to a short circuit for the second frequency band. In this way, the signal of the second frequency band can be grounded by the first capacitor 12, and the signal of the second frequency band can be blocked by the first inductor 11, so as to reduce the influence of the second feed 2 and improve the bandwidth of the first feed 1.
[0059] In the above embodiment, since the second frame radiator 9 is a suspended branch with no solid metal rib in the middle ground, when the second frame radiator 9 radiates the third frequency band, the current on the second frame radiator 9 can couple to the first frame radiator 3, still using... Figure 6As shown, a ring resonant mode is formed between the first upper frame point 31 and the second upper frame point 91. The efficiency dip of this ring resonant mode affects the performance of the first frequency band or the second frequency band. Therefore, the electronic device also includes a first switch 13 and a second capacitor 14. The second frame radiator 9 also includes a third upper frame point 92, which is located closer to the first frame radiator 3 than the first upper frame point 91. By switching the first switch 13, the connection between the third upper frame point 92 and the second capacitor can be switched. Thus, the current path length of the ring resonant mode between the first upper frame point 31 and the second upper frame point 91 can be adjusted by the second capacitor, thereby adjusting the resonant frequency of the ring resonant mode. This ensures that when the second power supply 2 is in operation, the resonant frequency of the ring resonant mode is outside the second frequency band or the first frequency band, thus avoiding the impact of the efficiency dip of the ring resonant mode on the performance of the second frequency band.
[0060] For example, taking the second frequency band as N78, since this ring resonant mode forms a dip at 3.1 GHz, such as Figure 7 As shown, the orange curve represents the radiation efficiency curve of the N78 band without the second capacitor 14 connected. It can be seen that the performance of the N78 band degrades at 3300MHz due to the pitting effect of the ring resonant mode. (Comparison...) Figure 7 As shown by the brown and blue curves, when a 0.7pF or 0.6pF first capacitor is connected through the first switch 13, the performance of the N78 band at 3300MHz is significantly improved compared to the schemes with a 0.3pF or 0.4pF first capacitor or without a first capacitor. Therefore, it is evident that in the second frequency band, connecting the second capacitor 14 through the first switch 13 is beneficial for improving the radiation efficiency of the second frequency band.
[0061] In some embodiments, such as Figure 8 As shown, when the second frame radiator 9 covers the third frequency band, through slot coupling, the first frame radiator 3 and the second frame radiator 9 will form a λ resonant mode. Taking the third frequency band as the B41 band as an example, as follows... Figure 9As shown, when no inductor is connected at the first upper frame point 31, the λ resonant mode introduces a pit in the B41 frequency band. Therefore, the electronic device also includes a second switch 15 and a second inductor 16. The second switch 15 switches the connection between the first upper frame point 31, the second inductor 16, and ground. That is, when the second switch 15 is closed, the first upper frame point 31 is grounded through the second inductor 16; when the second switch is open, the first upper frame point 31 is disconnected from the second inductor 16. When the second frame radiator 9 radiates the third frequency band, the second switch 15 is closed, and the resonant frequency of the λ resonant mode of the entire arm of the first frame radiator 3 and the second frame radiator 9 is located outside the band of the third frequency band. Taking the third frequency band as the intermediate frequency band as an example, the intermediate frequency band is usually located in the range of 1.7GHz-2.7GHz. Figure 9 For example, the orange curve represents the radiation efficiency curve of the second frame radiator 9 radiating the third frequency band signal when a 10nH second inductor 16 is connected, and the blue curve represents the radiation efficiency curve of the second frame radiator 9 radiating the third frequency band signal when no component is connected through the tuning circuit 6. Comparing the two curves, it can be seen that when a 10nH second inductor 16 is connected, the resonant frequency of the λ resonant mode is pushed to a further 2800MHz, improving the efficiency of the second frame radiator 9 in the B41 frequency band. The second switch 15 can be a switching circuit in the tuning circuit 6. In this case, the second inductor 16 can be used to adjust the resonant frequency of the λ resonant mode when the second frame radiator 9 radiates the third frequency band, and can also be used for tuning when the first frame radiator 3 radiates the first frequency band. Of course, in other embodiments, the second switch 15 and the second inductor 16 are independent of the switching circuit of the tuning circuit 6, and this disclosure does not impose any limitations on this.
[0062] Other embodiments of this disclosure will readily occur to those skilled in the art upon consideration of the specification and practice of the disclosure herein. This disclosure is intended to cover any variations, uses, or adaptations of this disclosure that follow the general principles of this disclosure and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this disclosure are indicated by the following claims.
[0063] It should be understood that this disclosure is not limited to the precise structures described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this disclosure is limited only by the appended claims.
Claims
1. An electronic device, comprising: include: A first border radiator, the first border radiator including a first top border point; First power supply; The second power supply is electrically connected to the first upper frame point, and both the first and second power supplies are electrically connected to the first upper frame point. Wherein, the first power supply excites the first frame radiator to cover a first frequency band, the second power supply excites the first frame radiator to cover a second frequency band, and the frequency of the signal in the second frequency band is greater than the frequency of the signal in the first frequency band.
2. The electronic device of claim 1, wherein, It also includes a motherboard and a metal spring that is electrically connected to the first upper frame. The motherboard is spaced apart from the first frame radiator. The first power supply and the second power supply are both located on the motherboard and are electrically connected to the first frame radiator through the metal spring. The second power supply is located on the edge of the motherboard near the first frame radiator.
3. The electronic device according to claim 2, characterized in that, The second power supply and the metal spring are located on the same layer of the motherboard. The second power supply is located on one side of the metal spring, and the second power supply and the metal spring form the shortest current path.
4. The electronic device according to claim 2, characterized in that, The second power supply is located at the bottom layer of the motherboard, and the first power supply is located at the top layer of the motherboard.
5. The electronic device of claim 2, wherein, It also includes a tuning circuit, which is electrically connected between the first feed and the first upper frame point, and is arranged in parallel with the first feed; The tuning circuit is located on the motherboard, with the extension direction of the metal spring serving as the boundary, and the first power supply and the tuning circuit are on different sides.
6. The electronic device of claim 1, wherein, It also includes a first resonant circuit and a second resonant circuit, wherein the first resonant circuit is electrically connected between the first upper frame point and the first feed, and the second resonant circuit is electrically connected between the first upper frame point and the second feed. The first resonant circuit and the second resonant circuit are connected in parallel and both are directly connected to the first upper frame point. The first resonant circuit is equivalent to an open circuit for the second frequency band, and the second resonant circuit is equivalent to an open circuit for the first frequency band signal and its higher-order mode signals.
7. The electronic device of claim 6, wherein, It also includes a first inductor and a first capacitor. The first inductor is connected in series between the first resonant circuit and the first power supply. One end of the first capacitor is grounded, and the other end is electrically connected between the first inductor and the first resonant circuit. The first inductor is equivalent to an open circuit for the second frequency band, and the first capacitor is equivalent to a short circuit for the second frequency band.
8. The electronic device of claim 6, wherein, The resonant frequency of the second resonant circuit is located within the frequency range of the second frequency band; and / or The first frequency band includes a first low frequency band and a second low frequency band. The 1 / 4 wavelength mode of the first frame radiator resonates in the first low frequency band, and the resonant frequency of the first resonant circuit is located within the frequency range of the second low frequency band.
9. The electronic device of claim 1, wherein, Also includes: The second frame radiator covers the third frequency band and cooperates with the first frame radiator to form a gap. The third frequency band is different from the first frequency band and the second frequency band. The second frame radiator includes a second upper frame point and a third upper frame point. The third power supply is electrically connected to the second upper frame point; First switch; The second capacitor is connected in series with the first switch, and the first switch switches the conduction state between the third upper frame point and the second capacitor. When the second power supply is in the working state, the first switch is closed, and the resonant frequency of the ring resonant mode formed between the first upper frame point and the third upper frame point is outside the second frequency band or the first frequency band.
10. The electronic device of claim 9, wherein, It also includes a second switch and a second inductor, the second switch switching the connection between the first upper frame point, the second inductor and the ground; When the second frame radiator radiates the third frequency band, the second switch is closed, and the resonant frequency of the λ resonant mode of the entire arm of the first frame radiator and the second frame radiator is located outside the band of the third frequency band.