A drive conversion circuit and an inverter bridge circuit

Abstract

This utility model discloses a drive conversion circuit and an inverter bridge circuit. The drive circuit includes: a boost module, a signal inversion module, a voltage regulator module, a first N-type MOSFET, and a second N-type MOSFET. The signal inversion module includes a transistor and a third N-type MOSFET. The drain of the third N-type MOSFET is connected to the base of the transistor, and the gate of the third N-type MOSFET receives a first drive signal. The boost module boosts the power supply voltage and inputs it to the base of the transistor. The voltage regulator module is connected between the emitter of the transistor and the gate of the first N-type MOSFET. The drain of the first N-type MOSFET is connected to the power supply, and the source of the first N-type MOSFET is connected to the drain of the second N-type MOSFET and to an external device to be driven. The gate of the second N-type MOSFET receives a second drive signal. Applying the solution provided by this utility model can improve the reliability and stability of the drive circuit.

Description

Technical Field

[0001] This utility model relates to the field of motor controller technology, and more specifically, to a drive conversion circuit and an inverter bridge circuit. Background Technology

[0002] Currently, most motor drives on the market use inverter bridge drives. These inverter bridges typically employ a P-type MOSFET (Metal-Oxide-Semiconductor) upper bridge and an N-type MOSFET lower bridge.

[0003] Due to limitations in manufacturing processes, P-type MOSFETs have relatively weak current and voltage withstand capabilities. Therefore, to increase their current withstand capability, multiple P-type MOSFETs are typically connected in parallel. However, due to differences in the internal impedance of different P-type MOSFETs, their overcurrent capabilities can vary, and in some cases, a single P-type MOSFET may be damaged by a sudden large current. Therefore, this parallel connection method has poor reliability and also occupies circuit board space, increasing development costs. Utility Model Content

[0004] This invention provides a drive conversion circuit and an inverter bridge circuit to improve the reliability and stability of the drive circuit. The specific technical solution is as follows:

[0005] In a first aspect, this utility model provides a drive conversion circuit, which includes: a boost module, a signal inversion module, a voltage regulator module, a first N-type metal-oxide-semiconductor MOSFET, and a second N-type MOSFET, wherein...

[0006] The signal inversion module includes a transistor and a third N-type MOSFET. The drain of the third N-type MOSFET is connected to the base of the transistor, the source of the third N-type MOSFET is grounded, and the gate of the third N-type MOSFET is used to receive a first drive signal, wherein the first drive signal is used to control the conduction state of the third N-type MOSFET.

[0007] A boost module is connected to the base of a transistor and is used to boost the power supply voltage before inputting it to the base of the transistor. The voltage difference before and after boosting is greater than the conduction threshold of the transistor.

[0008] A voltage regulator module is connected between the emitter of the transistor and the gate of the first N-type MOSFET to regulate the gate voltage of the first N-type MOSFET. The drain of the first N-type MOSFET is connected to the power supply, and the source of the first N-type MOSFET is connected to the drain of the second N-type MOSFET and the external device to be driven. The source of the second N-type MOSFET is grounded, and the gate of the second N-type MOSFET is used to receive a second drive signal. The second drive signal is used to control the second N-type MOSFET to turn on when the first N-type MOSFET is off, and to control the second N-type MOSFET to turn off when the first N-type MOSFET is on.

[0009] Optionally, the voltage regulator module includes: a Zener diode and a Zener resistor, wherein,

[0010] The anode of the Zener diode is connected to the source of the first N-type MOSFET, and the cathode of the Zener diode is connected to the gate of the first N-type MOSFET. The Zener resistor is connected in parallel across the anode and cathode of the Zener diode.

[0011] Optionally, the drive conversion circuit also includes a first current limiting module, which includes a first current limiting resistor, a second current limiting resistor, and a first filter capacitor connected in parallel. One end of the first current limiting resistor is connected to the emitter of the transistor, and the other end is connected to the cathode of the Zener diode.

[0012] Optionally, the drive conversion circuit further includes a second current limiting module, which includes a third current limiting resistor and a fourth current limiting resistor. One end of the third current limiting resistor is connected to the base of the transistor, and the other end is connected to the output terminal of the boost module. One end of the fourth current limiting resistor is connected to the collector of the transistor, and the output terminal of another boost module is connected to it.

[0013] Optionally, the drive conversion circuit further includes: a first filtering module, which includes a first filtering resistor and a second filtering capacitor, wherein a first end of the first filtering resistor is used to receive the first driving signal, and a second end is connected to the gate of the third N-type MOS transistor; one end of the second filtering capacitor is connected to the gate of the third N-type MOS transistor, and the other end is grounded.

[0014] Optionally, the drive conversion circuit further includes: a second filtering module, the second filtering module including a third filtering resistor and a fourth filtering resistor connected in parallel, and a third filtering capacitor and a fourth filtering capacitor connected in parallel, wherein the first end of the third filtering resistor is connected to the source of the first N-type MOS transistor, the second end is connected to the first end of the third filtering capacitor, and the second end of the third filtering capacitor is connected to the drain of the first N-type MOS transistor.

[0015] Optionally, the drive conversion circuit further includes: a third filtering module, which includes a fifth filtering resistor and a sixth filtering resistor connected in parallel, and a fifth filtering capacitor and a sixth filtering capacitor connected in parallel, wherein the first end of the fifth filtering resistor is connected to the source of the second N-type MOSFET, the second end of the fifth filtering resistor is connected to the first end of the fifth filtering capacitor, and the second end of the fifth filtering capacitor is connected to the drain of the second N-type MOSFET.

[0016] Optionally, the drive conversion circuit further includes a discharge module, the discharge module including a first discharge resistor and a second discharge resistor, wherein a first end of the first discharge resistor is used to receive the second drive signal, and a second end is connected to the gate of the second N-type MOS transistor, and one end of the second discharge resistor is connected to the gate of the second N-type MOS transistor, and the other end is connected to the source of the second N-type MOS transistor.

[0017] Optionally, the power supply voltage is 28V, and the voltage obtained after passing through the boost module is 40V.

[0018] Secondly, this utility model embodiment also provides an inverter bridge circuit, which includes at least two drive conversion circuits as provided in any of the above embodiments, wherein each drive conversion circuit is connected in parallel with each other, and in each drive conversion circuit, the output node between the first N-type MOS transistor and the second N-type MOS transistor is connected to the coils corresponding to different phases of the motor to be driven, for controlling the rotation of the motor to be driven.

[0019] In the technical solution provided by this utility model embodiment, the boost module can increase the power supply voltage of the MOSFET gate, ensuring that the MOSFET can conduct normally. The reverse of the drive signal can be achieved through a transistor and a third N-type MOSFET. By replacing the P-type MOSFET with the first N-type MOSFET as the upper bridge switch of the inverter bridge, the problem of P-type MOSFETs being broken down by instantaneous large currents due to their poor current withstand capability is avoided, improving the reliability and stability of the circuit. Furthermore, it also avoids the problem of occupying circuit board space due to multiple P-type MOSFETs connected in parallel, effectively simplifying the drive circuit and reducing development costs. In addition, the Zener diode ensures the stability of the gate voltage and prevents power transistor failure. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are merely some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without any creative effort.

[0021] Figure 1This is a schematic diagram of a drive conversion circuit provided for an embodiment of the utility model. Detailed Implementation

[0022] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only a part of the embodiments of the present utility model, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of the present utility model without creative effort are within the scope of protection of the present utility model.

[0023] It should be noted that the terms "comprising" and "having," and any variations thereof, in the embodiments and drawings of this utility model are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the steps or units listed, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or devices.

[0024] This utility model discloses a drive conversion circuit and an inverter bridge circuit. The following is a detailed description of this utility model embodiment.

[0025] Figure 1 This is a schematic diagram of a drive conversion circuit provided in an embodiment of the present invention. Figure 1 As shown, the drive conversion circuit includes: a boost module (not shown in the figure), a signal inverting module 1, a voltage regulator module 2, a first N-type MOSFET Q1, and a second N-type MOSFET Q2, wherein...

[0026] The boost module is connected to the base of transistor Q11 and is used to boost the power supply voltage before inputting it to the base of the transistor. The voltage difference before and after boosting is greater than the transistor's conduction threshold. For example, if the power supply voltage is 28V, the voltage obtained after passing through the boost module is 40V.

[0027] The signal inversion module 1 includes a transistor Q11 and a third N-type MOSFET Q3. The drain of the third N-type MOSFET Q3 is connected to the base of the transistor Q11, the source of the third N-type MOSFET Q3 is grounded, and the gate of the third N-type MOSFET Q3 is used to receive a first drive signal MA_H. The first drive signal is used to control the conduction state of the third N-type MOSFET Q3.

[0028] In this embodiment, when the first drive signal MA_H is high, the third N-type MOSFET Q3 is turned on, the base of transistor Q11 is grounded, and transistor Q11 is turned off. When the first drive signal MA_H is low, the third N-type MOSFET Q3 is turned off, the base of transistor Q11 is equivalent to a high potential state, and transistor Q11 is turned on. Therefore, the drive signal can be reversed through transistor Q11 and the third N-type MOSFET Q3. Since the emitter of transistor Q11 is connected to the gate of the first N-type MOSFET, when transistor Q11 is turned on, the gate of the first N-type MOSFET Q1 is at a high potential state, the first N-type MOSFET Q1 is turned on, and the first N-type MOSFET Q1 outputs a high-level signal. When transistor Q11 is turned off, the gate of the first N-type MOSFET Q1 is at a low potential state, the first N-type MOSFET Q1 is turned off, and the first N-type MOSFET Q1 outputs a low-level signal.

[0029] The voltage regulator module 2 is used to regulate the gate voltage of the first N-type MOSFET. The voltage regulator module 2 includes a Zener diode DZ2 and a Zener resistor R32. The anode of the Zener diode DZ2 is connected to the source of the first N-type MOSFET Q1, and the cathode of the Zener diode DZ2 is connected to the gate of the first N-type MOSFET Q1. The Zener resistor R32 is connected in parallel across the anode and cathode of the Zener diode DZ2 to maintain the stability of the gate voltage of the first N-type MOSFET Q1.

[0030] The drain of the first N-type MOSFET Q1 is connected to the power supply. The source of the first N-type MOSFET Q1 is connected to the drain of the second N-type MOSFET Q2 and an external device to be driven, such as the coil of a motor via MA. The source of the second N-type MOSFET Q2 is grounded, and the gate of the second N-type MOSFET Q2 is used to receive the second drive signal MA_L. This second drive signal is used to control the second N-type MOSFET to turn on when the first N-type MOSFET is off, and to control the second N-type MOSFET to turn off when the first N-type MOSFET is on, thereby achieving current inversion. In this embodiment, using the first N-type MOSFET as the upper bridge switch of the inverter bridge avoids the problem of P-type MOSFETs being damaged by instantaneous large currents due to their poor current withstand capability, thus improving the reliability and stability of the circuit. Furthermore, it simplifies the drive circuit and reduces development costs.

[0031] Furthermore, in this embodiment, the drive conversion circuit also includes a first current limiting module 3. The first current limiting module 3 includes a first current limiting resistor R25, a second current limiting resistor R28, and a first filter capacitor C27 connected in parallel. One end of the first current limiting resistor R25 is connected to the emitter of transistor Q11, and the other end is connected to the cathode of Zener diode DZ2. This first current limiting module 3 can limit the magnitude of the current in its branch to prevent excessive current from damaging the first N-type MOSFET.

[0032] Furthermore, in this embodiment, the drive conversion circuit also includes a second current limiting module 4. The second current limiting module 4 includes a third current limiting resistor R22 and a fourth current limiting resistor R89. One end of the third current limiting resistor R22 is connected to the base of transistor Q11, and the other end is connected to the output terminal of the boost module. One end of the fourth current limiting resistor R89 ​​is connected to the collector of transistor Q11, and the other end is connected to the output terminal of the boost module. Through the current limiting effect of the second current limiting module 4, transistor Q11 can be kept in a high-level state when the third N-type MOSFET Q3 is turned off.

[0033] Furthermore, in this embodiment, the drive conversion circuit also includes a first filtering module 5, which includes a first filtering resistor R56 and a second filtering capacitor C36. The first terminal of the first filtering resistor R56 is used to receive the first drive signal, and the second terminal is connected to the gate of the third N-type MOSFET Q3. One terminal of the second filtering capacitor C36 is connected to the gate of the third N-type MOSFET Q3, and the other terminal is grounded. Through the first filtering module, high-frequency components in the first drive signal can be filtered out, and the drive signal can be converted into a smoother DC signal.

[0034] Furthermore, in this embodiment, the drive conversion circuit further includes a second filtering module 6, which includes a third filtering resistor R29 and a fourth filtering resistor R35 connected in parallel, and a third filtering capacitor C21 and a fourth filtering capacitor C22 connected in parallel. The first terminal of the third filtering resistor R29 is connected to the source of the first N-type MOSFET Q1, and the second terminal is connected to the first terminal of the third filtering capacitor C21. The second terminal of the third filtering capacitor C21 is connected to the drain of the first N-type MOSFET Q3. By employing the second filtering module, high-frequency signals in the circuit can be filtered out, and the voltage between the drain and source of the first N-type MOSFET can be kept stable.

[0035] Furthermore, in this embodiment, the drive conversion circuit further includes a third filtering module 7, which includes a fifth filtering resistor R43 and a sixth filtering resistor R47 connected in parallel, and a fifth filtering capacitor C30 and a sixth filtering capacitor C31 connected in parallel. The first terminal of the fifth filtering resistor R43 is connected to the source of the second N-type MOSFET Q2, and the second terminal is connected to the first terminal of the fifth filtering capacitor C30. The second terminal of the fifth filtering capacitor C30 is connected to the drain of the second N-type MOSFET Q2. By employing the third filtering module, high-frequency signals in the circuit can be filtered out, and the voltage between the drain and source of the second N-type MOSFET can be kept stable.

[0036] Furthermore, the drive conversion circuit also includes a discharge module 8, which includes a first discharge resistor R40 and a second discharge resistor R46. The first end of the first discharge resistor R40 receives the second drive signal, and the second end is connected to the gate of the second N-type MOSFET Q2. The first discharge resistor R40 effectively reduces the instantaneous current value, preventing damage to the second N-type MOSFET Q2 caused by the instantaneous current. One end of the second discharge resistor R46 is connected to the gate of the second N-type MOSFET Q2, and the other end is connected to the source of the second N-type MOSFET Q2, used to release the parasitic capacitance current generated after the second N-type MOSFET is turned on.

[0037] In this embodiment, the boost module increases the power supply voltage to the MOSFET gate, ensuring normal MOSFET conduction. Transistor Q11 and the third N-type MOSFET Q3 enable the inversion of the drive signal. Replacing the P-type MOSFET with the first N-type MOSFET as the upper-bridge switch in the inverter bridge avoids the problem of P-type MOSFETs being damaged by instantaneous high current due to their poor current handling capability, improving circuit reliability and stability. Furthermore, it avoids the space occupation caused by multiple P-type MOSFETs in parallel, effectively simplifying the drive circuit and reducing development costs. In addition, the Zener diode ensures the stability of the gate voltage, preventing power transistor failure.

[0038] The drive conversion circuit provided in this embodiment can be applied in an inverter bridge circuit for motor control. By connecting at least two drive conversion circuits as provided in the above embodiment in parallel, and connecting the output node between the first N-type MOSFET and the second N-type MOSFET in each drive conversion circuit to the coils corresponding to different phases of the external motor to be driven, the motor rotation can be controlled. Specifically, if the two drive conversion circuits provided in the above embodiment are connected in parallel between the power supply voltage and ground, the output nodes between the first N-type MOSFET and the second N-type MOSFET can be connected to the first phase and the second phase of the motor to be driven, respectively, to drive the motor. If the three drive conversion circuits provided in the above embodiment are connected in parallel, the output nodes between the first N-type MOSFET and the second N-type MOSFET can be connected to the first phase, the second phase, and the third phase of the motor to be driven, respectively, to drive a three-phase motor.

[0039] Those skilled in the art will understand that the accompanying drawings are merely schematic diagrams of one embodiment, and the modules or processes shown in the drawings are not necessarily essential for implementing this utility model.

[0040] Those skilled in the art will understand that the modules in the apparatus of the embodiments can be distributed in the apparatus of the embodiments as described in the embodiments, or they can be located in one or more devices different from this embodiment with corresponding changes. The modules of the above embodiments can be combined into one module, or they can be further divided into multiple sub-modules.

[0041] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this utility model, and not to limit it; although the utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this utility model.

Claims

1. A drive conversion circuit, characterized in that, The drive conversion circuit includes: a boost module, a signal inversion module, a voltage regulator module, a first N-type MOSFET, and a second N-type MOSFET, wherein... The signal inversion module includes a transistor and a third N-type MOS transistor, wherein the drain of the third N-type MOS transistor is connected to the base of the transistor, the source of the third N-type MOS transistor is grounded, and the gate of the third N-type MOS transistor is used to receive a first drive signal, wherein the first drive signal is used to control the conduction state of the third N-type MOS transistor. The boost module is connected to the base of the transistor and is used to boost the power supply voltage and input it to the base of the transistor, wherein the voltage difference before and after boosting is greater than the conduction threshold of the transistor. The voltage regulator module is connected between the emitter of the transistor and the gate of the first N-type MOS transistor; The drain of the first N-type MOSFET is connected to the power supply, the source of the first N-type MOSFET is connected to the drain of the second N-type MOSFET and an external device to be driven, the source of the second N-type MOSFET is grounded, and the gate of the second N-type MOSFET is used to receive a second drive signal. The second drive signal is used to control the second N-type MOSFET to turn on when the first N-type MOSFET is turned off, and to control the second N-type MOSFET to turn off when the first N-type MOSFET is turned on.

2. The drive conversion circuit according to claim 1, characterized in that, The voltage regulator module includes: a Zener diode and a Zener resistor, wherein, The anode of the Zener diode is connected to the source of the first N-type MOS transistor, the cathode of the Zener diode is connected to the gate of the first N-type MOS transistor, and the Zener resistor is connected in parallel across the anode and cathode of the Zener diode.

3. The drive conversion circuit according to claim 2, characterized in that, The drive conversion circuit further includes a first current limiting module, which includes a first current limiting resistor, a second current limiting resistor, and a first filter capacitor connected in parallel. One end of the first current limiting resistor is connected to the emitter of the transistor, and the other end is connected to the cathode of the Zener diode.

4. The drive conversion circuit according to claim 1, characterized in that, The drive conversion circuit further includes a second current limiting module, which includes a third current limiting resistor and a fourth current limiting resistor. One end of the third current limiting resistor is connected to the base of the transistor, and the other end is connected to the output terminal of the boost module. One end of the fourth current limiting resistor is connected to the collector of the transistor, and the other end is connected to the output terminal of the boost module.

5. The drive conversion circuit according to claim 1, characterized in that, The drive conversion circuit further includes: a first filtering module, which includes a first filtering resistor and a second filtering capacitor, wherein... The first end of the first filter resistor is used to receive the first drive signal, and the second end is connected to the gate of the third N-type MOS transistor; one end of the second filter capacitor is connected to the gate of the third N-type MOS transistor, and the other end is grounded.

6. The drive conversion circuit according to claim 1, characterized in that, The drive conversion circuit further includes: a second filtering module, which includes a third filtering resistor and a fourth filtering resistor connected in parallel, and a third filtering capacitor and a fourth filtering capacitor connected in parallel, wherein... The first end of the third filter resistor is connected to the source of the first N-type MOS transistor, the second end is connected to the first end of the third filter capacitor, and the second end of the third filter capacitor is connected to the drain of the first N-type MOS transistor.

7. The drive conversion circuit according to claim 1, characterized in that, The drive conversion circuit further includes: a third filtering module, which includes a fifth filtering resistor and a sixth filtering resistor connected in parallel, and a fifth filtering capacitor and a sixth filtering capacitor connected in parallel, wherein... The first end of the fifth filter resistor is connected to the source of the second N-type MOS transistor, the second end is connected to the first end of the fifth filter capacitor, and the second end of the fifth filter capacitor is connected to the drain of the second N-type MOS transistor.

8. The drive conversion circuit according to claim 1, characterized in that, The drive conversion circuit further includes a discharge module, which includes a first discharge resistor and a second discharge resistor. The first end of the first discharge resistor is used to receive the second drive signal, and the second end is connected to the gate of the second N-type MOS transistor. One end of the second discharge resistor is connected to the gate of the second N-type MOS transistor, and the other end is connected to the source of the second N-type MOS transistor.

9. The drive conversion circuit according to claim 1, characterized in that, The power supply voltage is 28V, and the voltage obtained after passing through the boost module is 40V.

10. An inverter bridge circuit, characterized in that, include: At least two drive conversion circuits as described in any one of claims 1-9, wherein each drive conversion circuit is connected in parallel with each other, and the output node between the first N-type MOS transistor and the second N-type MOS transistor in each drive conversion circuit is connected to the coils corresponding to different phases of the motor to be driven, for controlling the rotation of the motor to be driven.

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