MOS amplifier circuit, high voltage amplifier circuit and electrostatic chuck

Abstract

This application discloses a MOS amplifier circuit, a high-voltage amplifier circuit, and an electrostatic chuck, comprising: a MOS transistor, a bias current circuit, a third resistor, a load, and a Zener diode. The bias current circuit includes a switching transistor, a first resistor, a second resistor, and a voltage reference element. The drain of the MOS transistor is connected to the input terminal, and the source is connected to the input pin of the switching transistor and one end of the load. The gate is connected to the negative terminal and the input terminal of the Zener diode. The third resistor is connected between the gate and the input terminal of the MOS transistor. The second resistor is connected between the input pin and the control pin of the switching transistor, and the output pin of the switching transistor is connected to one end of the first resistor. The control pin of the voltage reference element is connected between the switching transistor and the first resistor, and the input pin is connected to the control pin of the switching transistor. The output pin of the voltage reference element, the other end of the first resistor, the positive terminal of the Zener diode, and the other end of the load are all connected to the output terminal. Using this application, a high-precision and highly stable bias current can be provided.

Description

Technical Field

[0001] This application relates to the field of amplifier circuit technology, and in particular to a MOS amplifier circuit, a high voltage amplifier circuit, and an electrostatic chuck. Background Technology

[0002] In electronic circuits, metal-oxide-semiconductor field-effect transistors (MOS) are widely used in amplifier circuits to amplify input signals. To ensure that a MOS transistor operates in the linear amplification region, it typically requires a suitable bias current. The bias current is the current that provides the quiescent operating point for active devices such as the transistor in an amplifier circuit. The stability and accuracy of the bias current have a significant impact on the overall performance of the amplifier circuit.

[0003] In common MOS amplifier circuits, the bias current is usually set by connecting a resistor to the source. However, the accuracy of the bias current obtained in this way is difficult to control. Under different output voltage variations of the amplifier transistors, the bias current is prone to instability, affecting the stability of the amplifier circuit. Utility Model Content

[0004] This application provides a MOS amplifier circuit, a high-voltage amplifier circuit, and an electrostatic chuck, which can provide high-precision and highly stable bias current and improve the stability of the amplifier circuit.

[0005] Firstly, this application provides a MOS amplifier circuit, which includes:

[0006] The MOSFET, bias current circuit, third resistor, load and Zener diode, wherein the bias current circuit includes a switching transistor, a first resistor, a second resistor and a voltage reference element;

[0007] The drain of the MOSFET is connected to the input terminal, the source of the MOSFET is connected to the input pin of the switch and one end of the load, and the gate of the MOSFET is connected to the negative terminal of the Zener diode and the input terminal.

[0008] The third resistor is connected between the gate of the MOS transistor and the input terminal;

[0009] The second resistor is connected between the input pin and the control pin of the switching transistor, and the output pin of the switching transistor is connected to one end of the first resistor;

[0010] The control pin of the voltage reference element is connected between the switching transistor and the first resistor, and the input pin of the voltage reference element is connected to the control pin of the switching transistor.

[0011] The output pin of the voltage reference element, the other end of the first resistor away from the switching transistor, the positive terminal of the Zener diode, and the other end of the load away from the MOS transistor are all connected to the output terminal.

[0012] As can be seen, in this application, after the switching transistor is turned on in the above bias current circuit, the current flows through the first resistor. When the voltage of the first resistor reaches the reference voltage of the voltage reference element, the voltage reference element is turned on, forming negative feedback on the voltage of the switching transistor, stabilizing the voltage of the switching transistor and the first resistor, so that the current in the first resistor tends to be stable, thereby providing a high-precision and highly stable bias current for the MOS transistor, enabling the MOS transistor to obtain a stable bias operating point. As a result, the MOS amplifier circuit can continuously operate in the linear amplification state, improving the working stability and signal linearity, and reducing the performance fluctuation problem caused by bias point drift.

[0013] In conjunction with the first aspect, in one possible implementation, the switching transistor is a MOS transistor, the input pin of the switching transistor is the drain, the output pin of the switching transistor is the source, and the control pin of the switching transistor is the gate.

[0014] It is evident that using a MOSFET as a switching transistor can achieve low-power bias current regulation while ensuring control accuracy.

[0015] In conjunction with the first aspect, in one possible implementation, the switching transistor is a transistor;

[0016] When the switching transistor is an NPN transistor, the input pin of the switching transistor is the collector, the output pin of the switching transistor is the emitter, and the control pin of the switching transistor is the base.

[0017] It is evident that using transistors as switching devices can reduce circuit costs while ensuring circuit performance.

[0018] In conjunction with the first aspect, in one possible implementation, the voltage reference element is a voltage reference chip, the input pin of the voltage reference element is the cathode, the control pin of the voltage reference element is the reference electrode, and the output pin of the voltage reference element is the anode.

[0019] It is evident that using a voltage reference chip as a voltage reference element can achieve bias current regulation with higher precision and higher temperature stability.

[0020] In conjunction with the first aspect, in one possible implementation, the voltage reference element is a transistor;

[0021] When the voltage reference element is an NPN transistor, the input pin of the voltage reference element is the collector, the control pin of the voltage reference element is the base, and the output pin of the voltage reference element is the emitter.

[0022] It is evident that using a transistor as a voltage reference element can reduce circuit costs while ensuring circuit performance.

[0023] In conjunction with the first aspect, in one possible implementation, the ratio of the current flowing through the first resistor to the current flowing through the second resistor is greater than or equal to 20.

[0024] It can be seen that by setting the ratio of the current flowing through the first resistor to the current flowing through the second resistor to be greater than or equal to 20, the influence of the current change of the second resistor on the bias current can be effectively reduced, thereby further improving the stability of the bias current, and thus improving the accuracy of the bias current and the stability of the amplifier circuit.

[0025] In conjunction with the first aspect, in one possible implementation, the load includes a resistor, capacitor, inductor, speaker, optocoupler, or motor.

[0026] As can be seen, by using resistors, capacitors, inductors, speakers, optocouplers or motors as loads, the MOS amplifier circuit can be adapted to a variety of different application scenarios, expanding the circuit's applicability and enhancing its versatility and practicality.

[0027] In conjunction with the first aspect, in one possible implementation, the input terminal or the output terminal is used to connect to ground, a power supply, or an external circuit.

[0028] As can be seen, by connecting the input or output terminal to ground, power supply or external circuit, the MOS amplifier circuit can be flexibly connected to different systems, which can not only ensure the stable operation of the circuit, but also facilitate integration with other circuit modules, thereby improving the circuit's compatibility and scalability.

[0029] Secondly, this application provides a high-voltage amplifier circuit, which includes:

[0030] First MOS amplifier circuit and second MOS amplifier circuit;

[0031] The input terminal of the first MOS amplifier circuit is connected to the positive terminal of the power supply, the output terminal of the first MOS amplifier circuit is connected to the input terminal of the second MOS amplifier circuit, and the output terminal of the second MOS amplifier circuit is connected to the negative terminal of the power supply.

[0032] The first MOS amplifier circuit and the second MOS amplifier circuit are MOS amplifier circuits as described in any possible embodiment of the first aspect.

[0033] Thirdly, an electrostatic chuck according to this application includes:

[0034] The circuit consists of a first MOS amplifier circuit, a second MOS amplifier circuit, a third MOS amplifier circuit, a fourth MOS amplifier circuit, and a chuck.

[0035] The input terminal of the first MOS amplifier circuit is connected to the positive terminal of the power supply, the output terminal of the first MOS amplifier circuit is connected to the input terminal of the second MOS amplifier circuit and the first terminal of the chuck, and the output terminal of the second MOS amplifier circuit is connected to the negative terminal of the power supply.

[0036] The input terminal of the third MOS amplifier circuit is connected to the positive terminal of the power supply, the output terminal of the third MOS amplifier circuit is connected to the input terminal of the fourth MOS amplifier circuit and the negative terminal of the chuck, and the output terminal of the fourth MOS amplifier circuit is connected to the second terminal of the power supply.

[0037] The first MOS amplifier circuit, the second MOS amplifier circuit, the third MOS amplifier circuit, and the fourth MOS amplifier circuit are MOS amplifier circuits described in any possible embodiment of the first aspect.

[0038] The beneficial effects of the technical solutions in the second and third aspects can be found in the technical effects of the technical solution in the first aspect, and will not be repeated here. Attached Figure Description

[0039] Figure 1 This is a schematic diagram of an existing MOS amplifier circuit.

[0040] Figure 2 This is a schematic diagram of the structure of a MOS amplifier circuit according to an embodiment of this application;

[0041] Figure 3 This is a schematic diagram of another MOS amplifier circuit proposed in the embodiments of this application;

[0042] Figure 4 This is a schematic diagram of the structure of a high-voltage amplifier circuit according to an embodiment of this application;

[0043] Figure 5 This is a schematic diagram of the structure of an electrostatic chuck proposed in the embodiments of this application. Detailed Implementation

[0044] It should be understood that the terms "first," "second," etc., used in the embodiments of this application are used to distinguish different objects, rather than to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, software, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may also include steps or units not listed, or may also include other steps or units inherent to these processes, methods, products, or devices.

[0045] The term "implementation" as used in the embodiments of this application means that a specific feature, structure, or characteristic described in connection with an implementation may be included in at least one implementation of this application. The appearance of this phrase in various places in the specification does not necessarily refer to the same implementation, nor is it a separate or alternative implementation mutually exclusive with other implementations. It will be explicitly and implicitly understood by those skilled in the art that the implementations described herein can be combined with other implementations.

[0046] In the embodiments of this application, "and / or" describes the relationship between associated objects, indicating that three relationships can exist. For example, for "A and / or B", the following three relationships exist: "A", "B", and "A and B".

[0047] In this embodiment of the application, the symbol " / " can indicate that the preceding and following related objects have an "or" relationship.

[0048] In the embodiments of this application, "at least one item" or similar expressions refer to any combination of these items, including any combination of a single item or a plurality of items, which means one or more, and "multiple" means two or more.

[0049] In this application, "higher than" can be used interchangeably with "greater than," "lower than" can be used interchangeably with "less than," "not lower than" can be used interchangeably with "higher than or equal to" or "greater than or equal to," and "not higher than" can be used interchangeably with "lower than or equal to" or "less than or equal to." In this application, for the same solution, "equal to" can be used with "less than" or "greater than," but not simultaneously with both. When "equal to" is used with "less than," it applies to the technical solution adopted by "less than." When "equal to" is used with "greater than," it applies to the technical solution adopted by "greater than."

[0050] In the embodiments of this application, the terms "of", "corresponding / relevant", "corresponding", "indicated", and "associated" can be used interchangeably.

[0051] In the embodiments of this application, the terms "association", "corresponding", "is", "of", "belonging to", "as", and "considered as" may sometimes be used interchangeably.

[0052] The following describes the relevant content, concepts, meanings, technical problems, technical solutions, and beneficial effects involved in the implementation of this application.

[0053] To facilitate understanding of the technical solution of this application, the shortcomings of existing MOS amplifier circuits are explained below with reference to the accompanying drawings.

[0054] See Figure 1 , Figure 1 This is a schematic diagram of a MOS amplifier circuit, such as... Figure 1 As shown, the MOS amplifier circuit includes: a MOS transistor 101, a bias current resistor 102, an equivalent load resistor 103, a drive resistor 104, and a Zener diode 105. The drain of the MOS transistor 101 is connected to the power supply VDD. The bias current resistor 102 and the equivalent load resistor 103 are connected in parallel between the source and ground of the MOS transistor 101. The drive resistor 104 is connected between the power supply VDD and the gate of the MOS transistor 101 to provide current to the gate of the MOS transistor 101. The Zener diode 105 is connected between the gate and ground of the MOS transistor 101 to stabilize the voltage between the gate and source of the MOS transistor 101, the voltage of the bias current resistor 102, and the voltage of the equivalent load resistor 103.

[0055] In this MOS amplifier circuit, the power supply VDD forms a loop to ground through the drive resistor 104 and the Zener diode 105. The voltage Vz1 of the Zener diode 105 provides a voltage Vg1 between the gate and source of the MOS transistor 101. When Vg1 is Vgs(th), the MOS transistor 101 is turned on under the action of the drive resistor 104 and Vg1. Current flows through the bias current resistor 102 and the equivalent load resistor 103, making the node voltage Vs1 Vz1 - Vgs(th), where Vgs(th) is the turn-on threshold voltage of the MOS transistor 101. Since the sum of the node voltage Vs1 and the voltage between the gate and source of the MOS transistor 101 is stabilized at Vz1 by the Zener diode 105, and as Vg1 increases, the node voltage Vs1 also increases. Therefore, the voltage between the gate and source of the MOS transistor 101 will balance to Vgs(th), and the node voltage Vs1 will stabilize at Vz1 - Vgs(th).

[0056] Subsequently, when the node voltage Vs1 stabilizes at Vz1-Vgs(th), the current I_bias across the bias current resistor 102 can be expressed by formula ①:

[0057]

[0058] Where R_bias1 is the resistance value of the bias current resistor 102.

[0059] The current I_bias can be used as the bias current of MOSFET 101. However, the current I_bias is affected by many factors, such as the voltage Vz1 of Zener diode 105, the turn-on threshold voltage Vgs(th) of MOSFET 101, and the resistance of bias current resistor 102. The voltage Vz1 of Zener diode 105 is greatly affected by the conduction current and temperature (the conduction current of Zener diode 105 is also affected by the power supply VDD and the drive resistor 104). The turn-on threshold voltage Vgs(th) of different MOSFETs also varies, resulting in poor accuracy and stability of current I_bias.

[0060] To address the aforementioned problems, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the above content and the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, not all of them. All other embodiments obtained by those skilled in the art based on the embodiments in this application without creative effort are within the scope of protection of this application. Furthermore, these embodiments can be related to each other or independent of each other, and identical content between different embodiments can be mutually referenced, which will not be elaborated upon here.

[0061] See Figure 2 , Figure 2 This is a schematic diagram of the structure of a MOS amplifier circuit proposed in an embodiment of this application, as shown below. Figure 2 As shown, the MOS amplifier circuit includes: MOS transistor 210, bias current circuit 220, Zener diode 240, load 250 and third resistor 260.

[0062] In this embodiment, the bias current circuit 220 may include: a switching transistor 223, a first resistor 224, a second resistor 232, and a voltage reference element 225. Specifically, the drain of the MOSFET 210 is connected to the input terminal, which can be connected to ground, a power supply, or an external circuit. In this embodiment, the input terminal is connected to the external power supply VDD. The source of the MOSFET 210 is connected to the input pin 226 of the switching transistor 223 and one end of the load 205. The gate of the MOSFET is connected to the negative terminal of the Zener diode 240 and the external power supply VDD. The third resistor 260 is connected between the gate of the MOSFET 210 and the external power supply VDD to provide current to the gate of the MOSFET 210.

[0063] In this embodiment, the second resistor 232 is connected between the input pin 226 and the control pin 228 of the switching transistor 223 to provide a startup current for the switching transistor 223. The output pin 227 of the switching transistor 223 is connected to one end of the first resistor 224. The control pin 230 of the voltage reference element 225 is connected between the switching transistor 223 and the first resistor 224, and the input pin 229 of the voltage reference element 225 is connected to the control pin 228 of the switching transistor 223. The output pin 231 of the voltage reference element 225, the other end of the first resistor 224 away from the switching transistor 223, the positive terminal of the Zener diode 240, and the other end of the load 250 away from the MOSFET 210 are all connected to the output terminal, which can be connected to ground, a power supply, or an external circuit.

[0064] In this embodiment, the bias current is the current I flowing through the second resistor 232. 232 The current I flowing through the first resistor 224 224 The sum of the two resistors, and since the second resistor 232 only needs to provide the drive current flowing through the switching transistor 223, this drive current can be much smaller than the current I flowing through the first resistor 224. 224 Based on this, in this embodiment, the current I flowing through the first resistor 224 224 With the current I flowing through the second resistor 232 232 The ratio is greater than or equal to 20, specifically 20, 21, 22, 23, 24, 25, 26, etc. Therefore, the bias current is mainly based on the current I flowing through the first resistor 224. 224 Mainly.

[0065] Specifically, when the MOS amplifier circuit reaches steady state, the source voltage Vs2 of MOS transistor 210 is approximately Vz2 - Vgs(th)2, where Vz2 is the voltage of Zener diode 240 and Vgs(th)2 is the turn-on threshold voltage of MOS transistor 210. In the bias current circuit 220, Vs2 provides voltage Vg3 to switch transistor 223, causing it to conduct and allowing current to flow through the first resistor 224. When the voltage Vs3 across the first resistor 224 reaches the reference voltage Vref of voltage reference element 225, voltage reference element 225 conducts. Because the voltage reference element 225 is turned on, the voltage Vs3 of the first resistor 224 forms negative feedback on the voltage between the control pin 228 and the output pin 227 of the switch transistor 223. The switch transistor 223, in turn, makes the voltage Vs3 of the first resistor 224 positively correlated with the voltage between the control pin 228 and the output pin 227 of the switch transistor 223, thereby forming a dynamic balance adjustment on the voltage Vg3 of the switch transistor 223, and finally stabilizing at the state where Vs3 equals Vref.

[0066] Therefore, the voltage Vs3 across the first resistor 224 will stabilize at a state equal to Vref, and the current I flowing through the first resistor 224 will then... 224 This can be expressed using formula ②:

[0067]

[0068] Among them, R 224 This is the resistance value of the first resistor, 224.

[0069] As can be seen from the above, the current I 224 It features high stability; by adjusting the resistance value of the first resistor 224, the current I can also be controlled. 224 The value is finely adjusted, and then the current I... 224 It can be used as the bias current for MOSFET 210, and features high precision and high stability.

[0070] In this embodiment, the load 250 can be a resistor, capacitor, inductor, speaker, optocoupler, or motor.

[0071] In one possible implementation, the switch 223 can be a MOSFET. For example, such as... Figure 2 and Figure 3 As shown, the switching transistor 223 can be an enhancement-mode N-channel MOSFET. In this case, the input pin 226 of the switching transistor 223 can be the drain, the output pin 227 of the switching transistor 223 can be the source, and the control pin 228 of the switching transistor 223 can be the gate.

[0072] In one possible implementation, the switching transistor 223 can also be a transistor. For example, when the switching transistor 223 is an NPN transistor, the input pin 226 of the switching transistor 223 can be the collector, the output pin 227 of the switching transistor 223 can be the emitter, and the control pin 228 of the switching transistor 223 can be the base.

[0073] In one possible implementation, the voltage reference element 225 can be a voltage reference chip. Subsequently, as... Figure 3 As shown, the input pin 229 of the voltage reference element 225 can be the cathode, the control pin 230 of the voltage reference element 225 can be the reference electrode, and the output pin 231 of the voltage reference element 225 can be the anode.

[0074] In one possible implementation, the voltage reference element 225 can also be a transistor. The voltage VBE between the base and emitter of the transistor is relatively stable, and the voltage V can be used to reference the voltage V. BE As a reference voltage Vref. For example, when the voltage reference element 225 is an NPN transistor, the input pin 229 of the voltage reference element 225 can be the collector, the control pin 230 of the voltage reference element 225 can be the base, and the output pin 231 of the voltage reference element 225 can be the emitter.

[0075] Therefore, in this application, a bias current circuit provides a high-precision and highly stable bias current to the MOSFET, enabling the MOSFET to obtain a stable bias operating point. Consequently, the MOSFET amplifier circuit can continuously operate in a linear amplification state, improving the operating stability and signal linearity of the MOSFET and reducing performance fluctuations caused by bias point drift.

[0076] See Figure 4 , Figure 4 This is a schematic diagram of the structure of a high-voltage amplifier circuit proposed in an embodiment of this application, as shown below. Figure 4 As shown, the high-voltage amplifier circuit includes: a first MOS amplifier circuit and a second MOS amplifier circuit.

[0077] In this embodiment, the input terminal of the first MOS amplifier circuit is connected to the positive terminal Vs+ of the power supply, the output terminal of the first MOS amplifier circuit is connected to the input terminal of the second MOS amplifier circuit, and the output terminal of the second MOS amplifier circuit is connected to the negative terminal Vs- of the power supply.

[0078] In this embodiment, both the first MOS amplifier circuit and the second MOS amplifier circuit are Figures 2-3 Any of the MOS amplifier circuits shown. The high-voltage amplifier circuit provided in this application will be described in detail below.

[0079] The output of the first MOS amplifier circuit is connected to the input of the second MOS amplifier circuit. The positive terminal of the power supply is connected to the input of the first MOS amplifier circuit, and the negative terminal of the power supply is connected to the output of the second MOS amplifier circuit. The upper and lower MOS transistors constitute the regulating transistor, which operates in linear amplification mode. By changing the conduction state of the regulating transistor, the output voltage at the connection point of the first and second MOS amplifier circuits can be changed. Simultaneously, since the bias currents in both the first and second MOS amplifier circuits have high accuracy and stability, the static losses of this high-voltage amplifier circuit can be reduced.

[0080] See Figure 5 , Figure 5 This is a schematic diagram of the structure of an electrostatic chuck proposed in an embodiment of this application, as shown below. Figure 5 As shown, the electrostatic chuck includes: a first MOS amplifier circuit, a second MOS amplifier circuit, a third MOS amplifier circuit, a fourth MOS amplifier circuit, and a chuck.

[0081] In this embodiment, the input terminal of the first MOS amplifier circuit is connected to the positive terminal Vs+ of the power supply, the output terminal of the first MOS amplifier circuit is connected to the input terminal of the second MOS amplifier circuit and the first terminal of the chuck, and the output terminal of the second MOS amplifier circuit is connected to the negative terminal Vs- of the power supply. The input terminal of the third MOS amplifier circuit is connected to the positive terminal Vs+ of the power supply, the output terminal of the third MOS amplifier circuit is connected to the input terminal of the fourth MOS amplifier circuit and the second terminal of the chuck, and the output terminal of the fourth MOS amplifier circuit is connected to the negative terminal Vs- of the power supply.

[0082] In this embodiment, the first MOS amplifier circuit, the second MOS amplifier circuit, the third MOS amplifier circuit, and the fourth MOS amplifier circuit are all... Figures 2-3 The electrostatic chuck provided in this application will be described in detail below, using any of the MOS amplifier circuits shown.

[0083] In this embodiment, the first MOS amplifier circuit, the second MOS amplifier circuit, the third MOS amplifier circuit, and the fourth MOS amplifier circuit respectively constitute... Figure 4The high-voltage amplifier circuit shown is as follows. When the load in the first MOS amplifier circuit disconnects the first MOS amplifier circuit, and the load in the second MOS amplifier circuit turns the second MOS amplifier circuit on, the first terminal of the chuck is connected to the negative terminal Vs- of the power supply through the second MOS amplifier circuit. When the load in the first MOS amplifier circuit turns the first MOS amplifier circuit on, and the load in the second MOS amplifier circuit turns the second MOS amplifier circuit off, the first terminal of the chuck is connected to the positive terminal Vs+ of the power supply through the first MOS amplifier circuit. For the third and fourth MOS amplifier circuits, as described above, their on / off state can be controlled by the load, thereby controlling the connection of the second terminal of the chuck to either the negative terminal Vs- or the positive terminal Vs+ of the power supply. Thus, bidirectional power supply to the chuck can be achieved.

[0084] Subsequently, by controlling the switching on or off of the first, second, third, and fourth MOS amplifier circuits, a stable and precise positive high voltage can be applied to the first electrode of the chuck, and a stable and precise negative high voltage can be applied to the second electrode of the chuck, or vice versa. This allows the chuck to generate a Coulombic attraction force on the wafer placed on it, thus fixing the wafer during processing.

[0085] In this embodiment, the load can be an optocoupler, thereby enabling control over the opening or closing of the MOS amplifier circuit.

[0086] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of the embodiments of this application. It should be understood that the above description is only a specific embodiment of the embodiments of this application and is not intended to limit the protection scope of the embodiments of this application. Any modifications, equivalent substitutions, improvements, etc., made on the basis of the technical solution of the embodiments of this application should be included within the protection scope of the embodiments of this application.

Claims

1. A MOS amplification circuit, characterized by, The MOS amplifier circuit includes: The components include a MOSFET, a bias current circuit, a third resistor, a load, and a Zener diode. The bias current circuit includes a switching transistor, a first resistor, a second resistor, and a voltage reference element. The drain of the MOSFET is connected to the input terminal, the source of the MOSFET is connected to the input pin of the switch and one end of the load, and the gate of the MOSFET is connected to the negative terminal of the Zener diode and the input terminal. The third resistor is connected between the gate of the MOS transistor and the input terminal; The second resistor is connected between the input pin and the control pin of the switching transistor, and the output pin of the switching transistor is connected to one end of the first resistor; The control pin of the voltage reference element is connected between the switching transistor and the first resistor, and the input pin of the voltage reference element is connected to the control pin of the switching transistor. The output pin of the voltage reference element, the other end of the first resistor away from the switching transistor, the positive terminal of the Zener diode, and the other end of the load away from the MOS transistor are all connected to the output terminal.

2. The MOS amplifier circuit according to claim 1, characterized in that, The switching transistor is a MOS transistor, the input pin of the switching transistor is the drain, the output pin of the switching transistor is the source, and the control pin of the switching transistor is the gate.

3. The MOS amplifier circuit according to claim 1, characterized in that, The switching transistor is a triode; When the switching transistor is an NPN transistor, the input pin of the switching transistor is the collector, the output pin of the switching transistor is the emitter, and the control pin of the switching transistor is the base.

4. The MOS amplifier circuit according to any one of claims 1-3, characterized in that, The voltage reference element is a voltage reference chip, the input pin of the voltage reference element is the cathode, the control pin of the voltage reference element is the reference electrode, and the output pin of the voltage reference element is the anode.

5. The MOS amplifier circuit according to any one of claims 1-3, characterized in that, The voltage reference element is a transistor; When the voltage reference element is an NPN transistor, the input pin of the voltage reference element is the collector, the control pin of the voltage reference element is the base, and the output pin of the voltage reference element is the emitter.

6. The MOS amplifying circuit according to any one of claims 1 to 3, wherein The ratio of the current flowing through the first resistor to the current flowing through the second resistor is greater than or equal to 20.

7. The MOS amplifying circuit according to any one of claims 1 to 3, wherein The load includes resistors, capacitors, inductors, speakers, optocouplers, or motors.

8. The MOS amplifying circuit according to any one of claims 1 to 3, wherein The input terminal or the output terminal is used to connect to the ground, a power source, or an external circuit.

9. A high voltage amplification circuit, characterized by, The high-voltage amplifier circuit includes: First MOS amplifier circuit and second MOS amplifier circuit; The input terminal of the first MOS amplifier circuit is connected to the positive terminal of the power supply, the output terminal of the first MOS amplifier circuit is connected to the input terminal of the second MOS amplifier circuit, and the output terminal of the second MOS amplifier circuit is connected to the negative terminal of the power supply. The first MOS amplifier circuit and the second MOS amplifier circuit are the MOS amplifier circuits according to any one of claims 1-8.

10. An electrostatic chuck, comprising: The electrostatic chuck includes: The circuit consists of a first MOS amplifier circuit, a second MOS amplifier circuit, a third MOS amplifier circuit, a fourth MOS amplifier circuit, and a chuck. The input terminal of the first MOS amplifier circuit is connected to the positive terminal of the power supply, the output terminal of the first MOS amplifier circuit is connected to the input terminal of the second MOS amplifier circuit and the first terminal of the chuck, and the output terminal of the second MOS amplifier circuit is connected to the negative terminal of the power supply. The input terminal of the third MOS amplifier circuit is connected to the positive terminal of the power supply, the output terminal of the third MOS amplifier circuit is connected to the input terminal of the fourth MOS amplifier circuit and the second terminal of the chuck, and the output terminal of the fourth MOS amplifier circuit is connected to the negative terminal of the power supply. The first MOS amplifier circuit, the second MOS amplifier circuit, the third MOS amplifier circuit, and the fourth MOS amplifier circuit are MOS amplifier circuits as described in any one of claims 1-8.

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