Tooling and phosphorus diffusion apparatus for placement in a semiconductor process furnace tube

Abstract

This application discloses a fixture and phosphorus diffusion equipment placed inside a semiconductor process furnace tube. The fixture includes a heat insulation body and a support portion. The support portion is connected to the heat insulation body and is configured to support and position the heat insulation body inside a semiconductor process furnace tube near the furnace opening. The heat insulation body is configured to axially shield the silicon wafer and the furnace opening inside the semiconductor process furnace tube. The fixture can insulate heat through the heat insulation body to prevent heat from escaping from the semiconductor process furnace tube through the furnace opening, thereby increasing the heat preservation effect at the furnace opening and facilitating an increase in the PSG thickness on the back of the silicon wafer. As the heat insulation body shields the silicon wafer and the furnace opening, when the airflow in the semiconductor process furnace tube flows towards the furnace opening, it is reversed by the rebound effect of the fixture and flows back towards the silicon wafer inside the semiconductor process furnace tube, causing a secondary reaction on the silicon wafer inside the semiconductor process furnace tube, especially on the silicon wafer near the furnace opening, to increase the thickness of PSG formed on the silicon wafer.

Description

Technical Field

[0001] This application relates to silicon wafer manufacturing technology, and more particularly to a tooling and phosphorus diffusion device placed inside a semiconductor process furnace tube. Background Technology

[0002] TOPCon (Tunnel Oxide Passivated Contact) battery technology has garnered significant attention in recent years due to its high battery conversion efficiency. In the TOPCon battery manufacturing process, phosphorus diffusion primarily serves to passivate the silicon substrate by forming an n+ / n high-low junction through high-concentration phosphorus doping. However, in current industrial mass production, the back side of the silicon wafer located at the furnace opening of the tubular phosphorus diffusion equipment often exhibits a thin PSG (Phospho Silicate Glass). This makes it highly susceptible to over-etching during the matching process with the front-side etching steps, resulting in low production line yield. Utility Model Content

[0003] In view of this, it is necessary to provide a tooling for increasing the PSG thickness on the back side of a silicon wafer inside a semiconductor process furnace tube.

[0004] Some embodiments of this application provide a fixture placed inside a semiconductor process furnace tube. The fixture includes a heat insulation body and a support portion. The support portion is connected to the heat insulation body and is configured to support and position the heat insulation body inside a semiconductor process furnace tube near the furnace opening. The heat insulation body is configured to axially shield the silicon wafer inside the semiconductor process furnace tube between the silicon wafer and the furnace opening.

[0005] The aforementioned fixture can insulate against heat through the heat insulation body, preventing heat from escaping from the semiconductor process furnace tube through the furnace opening and increasing the heat preservation effect at the furnace opening, which is beneficial to increasing the PSG thickness on the back of the silicon wafer. The heat insulation body is positioned between the silicon wafer and the furnace opening. When the airflow in the semiconductor process furnace tube flows towards the furnace opening, it is reversed by the rebound effect of the fixture and flows back towards the silicon wafer in the semiconductor process furnace tube, causing a secondary reaction in the silicon wafer in the semiconductor process furnace tube, especially the silicon wafer near the furnace opening, to increase the thickness of PSG formed on the silicon wafer.

[0006] According to some embodiments of this application, the heat insulation body is a hollow quartz shell structure; the tooling also includes quartz wool, which is filled inside the heat insulation body.

[0007] The aforementioned heat insulation body is a hollow structure. The density of quartz wool is much smaller than that of quartz shell, which helps to reduce the overall weight of the tooling. Furthermore, by filling the heat insulation body with quartz wool, the axial dimension of the tooling's heat insulation is increased, which can improve the overall heat insulation effect of the tooling, increase the utilization rate of heat in the semiconductor process furnace tube, and thus help to increase the PSG thickness on the back of the silicon wafer.

[0008] According to some embodiments of this application, the heat insulation body is provided with multiple through holes, which connect the inner and outer sides of the heat insulation body.

[0009] The aforementioned through holes facilitate heat dissipation from the insulation body and quartz wool, thereby reducing the risk of explosion caused by excessive heat absorption by the insulation body and quartz wool.

[0010] According to some embodiments of this application, a through hole is provided on one side of the heat insulation body and is configured to face the furnace opening when the heat insulation body is placed inside the semiconductor process furnace tube.

[0011] The aforementioned through-holes face the furnace opening, which facilitates heat dissipation from the tooling towards the furnace opening. The temperature at the furnace opening is relatively lower than the temperature inside the semiconductor process furnace tube, further enhancing heat dissipation for the tooling. Additionally, the tooling does not have through-holes on both opposite sides simultaneously, preventing the quartz wool within the insulation body from escaping through these holes. The phosphorus diffusion process is performed on the side of the insulation body facing the silicon wafer, and the quartz wool is protected by the side of the insulation body without through-holes, reducing the risk of phosphoric acid corrosion on the wafer.

[0012] According to some embodiments of this application, the heat insulation body includes a first sub-body and a second sub-body connected together. The second sub-body is connected to a support portion, and the first sub-body protrudes radially from both sides of the second sub-body to form two receiving portions. The receiving portions are configured to be placed on a paddle so that the tooling is conveyed to the semiconductor process furnace tube by the paddle.

[0013] The two receiving parts mentioned above enable the tooling to be carried on the paddle, so that it can enter the semiconductor process furnace tube together with the paddle and silicon wafer, thereby improving efficiency.

[0014] According to some embodiments of this application, the receiving portion is provided with a plurality of spaced-apart and radially protruding contact portions, which are configured to contact the paddle.

[0015] The multiple spaced contact portions contact the paddle, reducing the contact area between the receiving portion and the paddle, thus minimizing the risk of slippage when the receiving portion is planar.

[0016] According to some embodiments of this application, the contact portion extends axially to the sidewalls on opposite sides of the first sub-body.

[0017] The aforementioned contact portion extends axially to the sidewalls on opposite sides of the first subbody, which can improve the strength of the receiving portion, making the tooling less prone to damage when it is supported by the paddle and moves with the paddle, thereby improving the stability of the tooling.

[0018] According to some embodiments of this application, the outer peripheral wall of the first sub-body includes a plurality of first walls and at least one second wall, the first walls being shaped to the inner peripheral wall of a semiconductor process furnace tube, and the second wall being located between two first walls; the second wall is configured such that the distance between the second wall and the inner peripheral wall of the semiconductor process furnace tube is greater than the distance between the first wall and the inner peripheral wall of the semiconductor process furnace tube.

[0019] The aforementioned first wall is modeled after the inner wall of a semiconductor process furnace tube, so that the heat insulation body can maximize the area of ​​the upper part of the radial cross section of the semiconductor process furnace tube. The space near the lower inner peripheral wall of the semiconductor process furnace tube is used to place a support structure such as a boat. The tooling is supported by the paddle through the receiving part to realize the transportation while maximizing the area of ​​the upper part of the radial cross section of the semiconductor process furnace tube, thereby facilitating the airflow rebound and heat preservation in the actual silicon wafer reaction space inside the semiconductor process furnace tube.

[0020] According to some embodiments of this application, the support includes a plurality of radially spaced extensions, at least a portion of which extend axially and protrude from opposite sides of the thermal insulation body.

[0021] At least some of the aforementioned extensions extend axially and protrude from opposite sides of the heat insulation body, which helps prevent the tooling from tipping over axially when placed inside the semiconductor process furnace tube, thus reducing the risk of the heat insulation body tipping to one side along its thickness direction. Furthermore, the radial arrangement of the extensions facilitates radial positioning of the support portion.

[0022] According to some embodiments of this application, the tooling further includes at least one counterweight, the density of which is greater than that of the heat insulation body, and the counterweight is connected to the support or the end of the heat insulation body near the support.

[0023] The density of the aforementioned counterweight is greater than that of the heat insulation body, causing the center of gravity of the tooling to shift downwards, thus stabilizing its placement inside the semiconductor process furnace tube.

[0024] Some embodiments of this application also provide a phosphorus diffusion apparatus, which includes a silicon wafer transport device, a semiconductor process furnace tube, and the aforementioned tooling. The silicon wafer transport device is configured to transport a boat carrying silicon wafers into and out of the semiconductor process furnace tube. The heat-insulating body of the tooling is configured to axially shield the silicon wafer within the semiconductor process furnace tube between it and the furnace opening.

[0025] The aforementioned phosphorus diffusion equipment can insulate against heat through the heat insulation body to prevent heat from escaping from the semiconductor process furnace tube through the furnace opening, thereby increasing the heat preservation effect at the furnace opening. The heat insulation body is positioned between the silicon wafer and the furnace opening. When the airflow in the semiconductor process furnace tube flows toward the furnace opening, it is reversed by the rebound effect of the tooling and flows toward the silicon wafer in the semiconductor process furnace tube. This causes a secondary reaction in the silicon wafer in the semiconductor process furnace tube, especially the silicon wafer near the furnace opening, thereby increasing the thickness of PSG formed on the silicon wafer. Attached Figure Description

[0026] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings in the embodiments will be briefly described below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation on the scope.

[0027] Figure 1 This is a simplified schematic diagram of the structure of a working device according to an embodiment of this application placed inside a semiconductor process furnace tube.

[0028] Figure 2 This is a simplified schematic diagram of a portion of a phosphorus diffusion apparatus according to an embodiment of the present application, wherein a paddle in the silicon wafer transport device of the phosphorus diffusion apparatus enters the semiconductor process furnace tube.

[0029] Figure 3 for Figure 1 The diagram shows a simplified structural schematic of the tooling.

[0030] Figure 4 for Figure 3 The tooling shown is a simplified structural diagram from another perspective.

[0031] Figure 5 for Figure 3 The diagram shows a simplified structural representation of the heat insulation component in another embodiment of the tooling.

[0032] Explanation of main component symbols: 100, tooling; 10, 10a, heat insulation body; 11, first sub-body; 101, receiving part; 102, contact part; 103, first wall; 104, second wall; 12, 12a, second sub-body; 1001, through hole; 20, support part; 30, counterweight part; 200, semiconductor process furnace tube; 201, furnace opening; 300, paddle; 400, boat; 500, phosphorus diffusion equipment. Detailed Implementation

[0033] The implementation of this application will now be described with reference to the accompanying drawings in the embodiments of this application. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments.

[0034] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0035] Some embodiments of this application disclose a fixture placed inside a semiconductor process furnace tube. The fixture includes a heat insulation body and a support portion. The support portion is connected to the heat insulation body and is configured to support and position the heat insulation body inside a semiconductor process furnace tube near the furnace opening. The heat insulation body is configured to axially shield the silicon wafer inside the semiconductor process furnace tube between the furnace opening and the furnace.

[0036] The aforementioned fixture can insulate against heat through the heat insulation body, preventing heat from escaping from the semiconductor process furnace tube through the furnace opening and increasing the heat preservation effect at the furnace opening, which is beneficial to increasing the PSG thickness on the back of the silicon wafer. The heat insulation body is positioned between the silicon wafer and the furnace opening. When the airflow in the semiconductor process furnace tube flows towards the furnace opening, it is reversed by the rebound effect of the fixture and flows back towards the silicon wafer in the semiconductor process furnace tube, causing a secondary reaction in the silicon wafer in the semiconductor process furnace tube, especially the silicon wafer near the furnace opening, to increase the thickness of PSG formed on the silicon wafer.

[0037] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0038] Please see Figure 1 One embodiment of this application provides a tooling 100 used in the manufacture of silicon wafers (not shown). The silicon wafer and tooling 100 are conveyed by a paddle 300 in a silicon wafer transport device to a semiconductor process furnace tube 200 (hereinafter referred to as furnace tube 200). Normally, the silicon wafer is supported on a boat 400, and the boat 400 and tooling 100 are placed on the paddle 300. The paddle 300 moves, driving the boat 400 and tooling 100. When the boat 400 and tooling 100 are stably placed inside the furnace tube 200, the paddle 300 moves out of the furnace tube 200, and the furnace door 202 of the furnace tube 200 closes. Figure 2 As shown. When the furnace door 202 of the furnace tube 200 is closed, the tooling 100 is placed between the silicon wafer and the furnace opening 201 of the furnace tube 200, and close to the furnace opening 201. It is understood that the silicon wafer conveying device also includes a drive structure (not shown in the figure), which is used to drive the paddle 300 to convey into or out of the furnace tube 200.

[0039] Furnace tube 200 is generally in the shape of a long tube. For example, furnace tube 200 is a long tube with a roughly circular cross-section, or furnace tube 200 is a long tube with a roughly square cross-section.

[0040] In one embodiment, the tooling 100 is placed inside the furnace tube 200, with the tooling 100 and the furnace tube 200 having the same axial and radial directions, respectively. The axial direction is the length direction of the furnace tube 200, and the radial direction is parallel to the cross-section of the furnace tube 200 that is perpendicular to the axial direction.

[0041] Please see Figure 3 and Figure 4 The fixture 100 includes a heat insulation body 10 and a support 20. The support 20 is connected to the heat insulation body 10 and is configured to support and position the heat insulation body 10 within the furnace tube 200 near the furnace opening 201. The heat insulation body 10 is configured to axially shield between the silicon wafer and the furnace opening 201.

[0042] In one embodiment, the heat insulation body 10 is made of quartz material. Quartz is non-toxic, odorless, has a low coefficient of thermal expansion, is resistant to acid and alkali corrosion, has poor thermal conductivity, and is chemically stable. These properties help improve the stability of the tooling 100 within the furnace tube 200. Furthermore, the quartz heat insulation body 10 is placed at the furnace opening 201, reducing heat loss through the heat insulation body 10 to the furnace opening 201. Therefore, the heat insulation body 10 can prevent some of the heat inside the furnace tube 200 from dissipating to the furnace opening 201 or even outside the furnace tube 200.

[0043] It is understood that in other embodiments, the heat insulation body 10 may also be formed by coating a high-temperature heat insulation coating onto the heat insulation structure.

[0044] The heat insulation body 10 can insulate against heat loss from the furnace tube 200 through the furnace opening 201, thereby increasing the heat preservation effect at the furnace opening 201 and increasing the PSG thickness on the back of the silicon wafer. The heat insulation body 10 is positioned between the silicon wafer and the furnace opening 201. When the airflow in the furnace tube 200 flows toward the furnace opening 201, it is reversed by the rebound effect of the tooling 100 and flows toward the silicon wafer in the furnace tube 200, causing a secondary reaction in the silicon wafer in the furnace tube 200, especially the silicon wafer near the furnace opening 201, to increase the thickness of PSG formed on the silicon wafer.

[0045] In one embodiment, the heat insulation body 10 is a hollow quartz shell structure. The tooling 100 also includes quartz wool (not shown), which is filled inside the heat insulation body 10. The heat insulation body 10 is a hollow structure, and the density of the quartz wool is much smaller than that of the quartz shell, which helps to reduce the overall weight of the tooling 100. Furthermore, using quartz wool to fill the heat insulation body 10 increases the axial dimension of the heat insulation of the tooling 100, which can improve the overall heat insulation effect of the tooling 100, increase the utilization rate of heat in the furnace tube 200, and thus help to increase the PSG thickness on the back of the silicon wafer.

[0046] It is understood that in other embodiments, quartz wool may be omitted, and the heat insulation body 10 may also be a solid structure.

[0047] In one embodiment, the distance between the side of the heat insulation body 10 facing away from the furnace opening 201 and the boat 400 closest to the furnace opening 201 is approximately 6-15 cm. This reduces the risk of interference between the tooling 100 and related structures such as the boat 400, and also improves the heat insulation and airflow rebound effects, thereby increasing the PSG thickness. It is understood that in other embodiments, the distance between the heat insulation body 10 and the boat 400 can be other distances. Compared to the case where there is no heat insulation body 10 at the furnace opening 201, placing the tooling 100 inside the furnace tube 200 near the furnace opening 201 can increase the thickness of the PSG formed on the back of the silicon wafer.

[0048] For example, eleven boats 400 are placed inside the furnace tube 200, and the distance between the side of the heat insulation body 10 facing away from the furnace opening 201 and the boat 400 closest to the furnace opening 201 is 10 cm. When the tooling 100 is placed inside the furnace tube 200, the average thickness of the PSG formed on the silicon wafers of the first, sixth, and eleventh boats 400 that are sequentially close to the furnace opening 201 along the axial direction of the furnace tube 200 are 41.61 nm, 42.25 nm, and 41.31 nm, respectively; when there is no tooling 100 inside the furnace tube 200, the average thickness of the PSG formed on the silicon wafers of the first, sixth, and eleventh boats 400 that are sequentially close to the furnace opening 201 along the axial direction of the furnace tube 200 are 39.45 nm, 42.16 nm, and 41.26 nm, respectively. In other words, through the action of tooling 100, the PSG thickness on the silicon wafers at the furnace opening 201, the middle of the furnace, and the tail of the furnace tube 200 is increased. Among them, the PSG thickness of the silicon wafer at the furnace opening 201 without tooling 100 is significantly lower than that at the middle and tail of the furnace. However, through the action of tooling 100, the PSG thickness of the silicon wafer at the furnace opening 201 increases significantly, and the growth rate of the PSG thickness at the furnace opening 201 is greater than that at the middle and tail of the furnace. This reduces the risk of over-corrosion of the back side of the silicon wafer in subsequent processes (such as the wet process of silicon wafers) due to the smaller PSG thickness of the silicon wafer at the furnace opening 201.

[0049] In one embodiment, the heat insulation body 10 is provided with a plurality of through holes 1001, which connect the inner and outer sides of the heat insulation body 10. The through holes 1001 facilitate heat dissipation of the heat insulation body 10 and the quartz wool, thereby reducing the risk of explosion caused by excessive heat absorption by the heat insulation body 10 and the quartz wool.

[0050] In one embodiment, there are four through holes 1001, which are distributed in the part of the heat insulation body 10 away from the support part 20. The support part 20 is placed inside the furnace tube 200. The tooling 100 is stabilized in the furnace tube 200 by gravity. The heat of the heat insulation body 10 and the quartz wool dissipates upward, resulting in higher heat in the upper half of the tooling 100 away from the support part 20. The through holes 1001 are set in the upper half to facilitate the heat dissipation of the tooling 100.

[0051] It is understood that in other embodiments, the number of through holes 1001 can be two, three, five, or other numbers. Multiple through holes 1001 can also be distributed throughout the entire heat insulation body 10.

[0052] In one embodiment, the through-hole 1001 is located on one side of the heat insulation body 10 and is configured to face the furnace opening 201 when the heat insulation body 10 is placed inside the furnace tube 200. This facilitates the dissipation of heat from the tooling 100 towards the furnace opening 201, as the temperature at the furnace opening 201 is relatively lower than the temperature inside the furnace tube 200, further enhancing heat dissipation from the tooling 100. Furthermore, the tooling 100 does not have through-holes 1001 on both opposite sides simultaneously, which helps prevent the quartz wool inside the heat insulation body 10 from escaping through the through-holes 1001. The side of the heat insulation body 10 facing the silicon wafer undergoes phosphorus diffusion processing. The quartz wool is protected by the side of the heat insulation body 10 without through-holes 1001, reducing the risk of phosphoric acid corrosion on the wafer.

[0053] In one embodiment, the heat insulation body 10 includes a first sub-body 11 and a second sub-body 12 connected together. The second sub-body 12 is connected to the support portion 20. The first body protrudes radially from both sides of the second sub-body 12 to form two receiving portions 101. The receiving portions 101 are located on the side of the first sub-body 11 facing the support portion 20. The receiving portions 101 are configured to be placed on a paddle 300, so that the tooling 100 is conveyed into the furnace tube 200 by the paddle 300. The paddle 300 has two spaced-apart support beams, the two receiving portions 101 are supported on the support beams, and the second sub-body 12 is positioned between the two spaced-apart support beams, facilitating the tooling 100 to be supported and positioned on the paddle 300 and enter the furnace tube 200 together with the paddle 300.

[0054] In one embodiment, the heat insulation body 10 is generally umbrella-shaped, but is not limited thereto. For example, in another embodiment, such as Figure 5 As shown, the heat insulation main body 10a is roughly I-shaped, and the second sub-body 12a is roughly inverted T-shaped. The two supporting beams of the paddle 300 can pass through the space enclosed by the receiving part 101 and the second sub-body 12a. Both the first sub-body 11 and the second sub-body 12a are provided with through holes 1001. It should be noted that in Figure 5 The support part 20 is not shown in the figure. The support part 20 is provided on the second sub-body 12a to support the tooling 100 inside the furnace tube 200.

[0055] In one embodiment, the receiving portion 101 is provided with a plurality of spaced-apart and radially protruding contact portions 102, which are configured to contact the paddle 300. The multiple spaced-apart contact portions 102 contacting the paddle 300 reduce the contact area between the receiving portion 101 and the paddle 300, thus reducing the risk of slippage when the receiving portion 101 is planar.

[0056] Please see Figure 3 and Figure 4 The contact portion 102 extends axially to the sidewalls on both sides of the first sub-body 11, which can improve the strength of the receiving portion 101, making the tooling 100 less prone to damage when it is supported by the paddle 300 and moves with the paddle 300, thus improving the stability of the tooling 100.

[0057] It is understood that in other embodiments, the contact portion 102 may also be a protruding spherical structure. In another embodiment, the contact portion 102 may also be omitted.

[0058] In one embodiment, the outer peripheral wall of the first sub-body 11 includes a plurality of first walls 103 and at least one second wall 104. The first walls 103 are shaped to the inner peripheral wall of the furnace tube 200, for example, a circular wall. There are two first walls 103 and one second wall 104. The second wall 104 is located between the two first walls 103; the second wall 104 is configured such that the distance between the second wall 104 and the inner peripheral wall of the furnace tube 200 is greater than the distance between the first wall 103 and the inner peripheral wall of the furnace tube 200.

[0059] When the tooling 100 is placed inside the furnace tube 200, the first sub-body 11 is located above the second sub-body 12 and protrudes from the second sub-body 12. The first wall 103 is shaped to resemble the inner wall of the furnace tube 200 so that the heat insulation body 10 can maximize the area of ​​the upper part of the radial cross-section of the furnace tube 200. A support structure such as a boat 400 is placed in the space near the lower inner peripheral wall inside the furnace tube 200. The tooling 100 is supported by the paddle 300 through the receiving part 101 to achieve transportation while maximizing the area of ​​the upper part of the radial cross-section of the furnace tube 200, which is conducive to the airflow rebound and heat preservation in the actual silicon wafer reaction space inside the furnace tube 200.

[0060] It is understood that in other embodiments, the number of first walls 103 may also be three, and the number of second walls 104 may be two. A second wall 104 is provided between every two first walls 103. The second wall 104 can reduce the interference or resistance between two consecutive first walls 103 and the inner peripheral wall of the furnace tube 200, which is conducive to the tooling 100 moving relative to the furnace tube 200 into the furnace tube 200.

[0061] It is understood that in other embodiments, the outer peripheral wall of the first sub-body 11 may also be integrally modeled with the inner peripheral wall of the furnace tube 200.

[0062] In one embodiment, the support portion 20 includes a plurality of radially spaced extensions, at least a portion of which extend axially and protrude from opposite sides of the heat insulation body 10. This facilitates the tooling 100 being placed inside the furnace tube 200 without tilting axially, thus reducing the risk of the heat insulation body 10 tilting to one side along its thickness direction. Furthermore, the radial arrangement of the extensions facilitates radial positioning of the support portion 20.

[0063] In one embodiment, there are two extensions. The two extensions are located on the side of the second sub-body 12 facing away from the first sub-body 11. It is understood that in other embodiments, the number of extensions can be four, six, or other numbers, and the extensions can also be located on the axial side of the second sub-body 12. For example, there are four extensions: two extensions are located on the side of the second sub-body 12 facing the furnace opening 201, and the other two extensions are located on the side of the second sub-body 12 facing away from the furnace opening 201.

[0064] In one embodiment, the tooling 100 further includes two counterweights 30. The two counterweights 30 are connected to the support 20 and are evenly distributed axially on opposite sides of the insulation body 10. The density of the counterweights 30 is greater than the density of the insulation body 10, causing the center of gravity of the tooling 100 to shift downwards, thus stabilizing its placement within the furnace tube 200. The even distribution of the two counterweights 30 on opposite sides of the insulation body 100 improves the uniformity of weight distribution at the bottom of the tooling 100, reducing the risk of tipping over due to uneven gravity distribution.

[0065] It is understood that in other embodiments, the number of counterweights 30 may also be one, four, six, or other quantities. For example, one counterweight 30 may be connected between two extensions located at the bottom of the second sub-body 12, and another counterweight 30 may extend equidistantly to the opposite sides of the heat insulation body 10. Alternatively, four counterweights 30 may be connected to the end regions of the heat insulation body 10 near the support portion 20, and may be evenly distributed in two groups on opposite sides of the heat insulation body 10.

[0066] The aforementioned fixture 100 can insulate against heat through the heat insulation body 10, thereby preventing heat from escaping from the furnace tube 200 through the furnace opening 201 and increasing the heat preservation effect at the furnace opening 201, which is beneficial to increasing the PSG thickness on the back of the silicon wafer. The heat insulation body 10 is positioned between the silicon wafer and the furnace opening 201. When the airflow in the furnace tube 200 flows toward the furnace opening 201, it is reversed by the rebound effect of the fixture 100 and flows toward the silicon wafer in the furnace tube 200, causing a secondary reaction in the silicon wafer in the furnace tube 200, especially the silicon wafer near the furnace opening 201, to increase the thickness of PSG formed on the silicon wafer.

[0067] This tooling 100 is used in semiconductor process equipment, and can be used not only in phosphorus diffusion equipment, but also in boron diffusion equipment, deposition equipment, etc. In semiconductor process equipment, the boat 400 that carries the silicon wafer can be a quartz boat, or a boat made of other materials, such as a silicon carbide boat.

[0068] Some embodiments of this application also propose a phosphorus diffusion device 500. For example... Figure 2As shown, this phosphorus diffusion equipment 500 includes a silicon wafer transport device, a furnace tube 200, and a tooling 100. The silicon wafer transport device includes a paddle 300, which is used to transport a boat 400 carrying silicon wafers into the furnace tube 200, or to transport a boat 400 carrying silicon wafers out of the furnace tube 200. It should be noted that when the silicon wafers are subjected to thermal processing in this phosphorus diffusion equipment 500, the paddle 300 is located outside the furnace tube 200. That is, after transporting the boat 400 carrying silicon wafers into the furnace tube 200, the paddle 300 leaves the furnace tube 200. When the silicon wafers are subjected to thermal processing, the heat insulation body 10 of the tooling 100 axially shields the silicon wafers inside the furnace tube 200 between the furnace opening 201 and the furnace.

[0069] The above embodiments are only used to illustrate the technical solutions of this application and are not intended to limit it. Although this application has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of this application without departing from the spirit and substance of the technical solutions of this application.

Claims

1. A tooling for placement within a semiconductor process furnace tube, characterized by, include: Thermal insulation body; A support portion is connected to the heat insulation body and configured to support and position the heat insulation body within a semiconductor process furnace tube near the furnace opening; the heat insulation body is configured to axially shield the silicon wafer within the semiconductor process furnace tube from the furnace opening.

2. The tooling of claim 1, wherein: The heat insulation body is a hollow quartz shell structure; the tooling also includes quartz wool, which is filled inside the heat insulation body.

3. The tooling of claim 2, wherein: The heat insulation body is provided with multiple through holes, which connect the inner and outer sides of the heat insulation body.

4. The tooling of claim 3, wherein: The through hole is located on one side of the heat insulation body and is configured to face the furnace opening when the heat insulation body is placed inside the semiconductor process furnace tube.

5. The tooling of any one of claims 1 to 4, wherein: The heat insulation body includes a first sub-body and a second sub-body connected together. The second sub-body is connected to the support portion. The first sub-body protrudes radially from both sides of the second sub-body to form two receiving portions. The receiving portions are configured to be placed on a paddle so that the tooling is conveyed to the semiconductor process furnace tube by the paddle.

6. The tooling of claim 5, wherein: The receiving part is provided with a plurality of contact parts arranged at intervals and protruding radially, and the plurality of contact parts are configured to contact the paddle.

7. The tooling of claim 6, wherein: The contact portion extends axially to the sidewalls on opposite sides of the first sub-body.

8. The tooling of claim 5, wherein: The outer peripheral wall of the first sub-body includes a plurality of first walls and at least one second wall, the first walls being shaped to the inner peripheral wall of the semiconductor process furnace tube, and the second wall being located between two of the first walls; the second wall is configured such that the distance between the second wall and the inner peripheral wall of the semiconductor process furnace tube is greater than the distance between the first wall and the inner peripheral wall of the semiconductor process furnace tube.

9. The tooling of any one of claims 1 to 4, wherein: The support includes a plurality of radially spaced extensions, at least a portion of which extend axially and protrude from opposite sides of the thermal insulation body.

10. The tooling of claim 9, wherein: The tooling also includes at least one counterweight, the density of which is greater than that of the heat insulation body, and the counterweight is connected to the support or the end of the heat insulation body near the support.

11. A phosphorus diffusion apparatus characterized by comprising: Includes a silicon wafer transport device, a semiconductor process furnace tube, and tooling as described in any one of claims 1 to 10; The silicon wafer transport device is configured to transport a boat carrying silicon wafers into the semiconductor process furnace tube and then leave the semiconductor process furnace tube. The heat insulation body of the tooling is configured to axially shield the silicon wafer inside the semiconductor process furnace tube between the furnace opening and the furnace.

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