Perovskite solar cell encapsulation structure

Abstract

This utility model relates to the field of perovskite solar cell technology and discloses a perovskite solar cell encapsulation structure, comprising: an insulating substrate, one side surface of which has a device formation region and an electrode lead-out region, and an isolation region located between the device formation region and the electrode lead-out region; a perovskite solar cell device located in the device formation region; an electrode lead-out terminal located in the electrode lead-out region; a thin-film encapsulation layer located on one side surface of the perovskite solar cell device, the thin-film encapsulation layer extending beyond the side of the perovskite solar cell device to at least a portion of the isolation region; a backplate located on one side of the thin-film encapsulation layer; and an encapsulating adhesive layer located at least in the isolation region, the encapsulating adhesive layer bonding the thin-film encapsulation layer and the backplate. The thin-film encapsulation layer, the encapsulating adhesive layer, and the backplate constitute a double water and oxygen barrier, and the encapsulating adhesive being located at least in the isolation region can reduce the impact of the corner effect on the encapsulation effect, thereby effectively improving the stability of the perovskite solar cell in harsh environments.

Description

Technical Field

[0001] This utility model relates to the field of perovskite solar cell technology, and specifically to a perovskite solar cell encapsulation structure. Background Technology

[0002] Solar energy, with its high reserves, wide distribution, renewable nature, and pollution-free characteristics, is considered key to solving energy shortages and environmental pollution problems. Solar cells, as an effective way to utilize solar energy, work by directly converting solar radiation into electrical energy using the photovoltaic effect. Perovskite solar cells, as third-generation solar cells, have advantages such as low cost, simple fabrication process, and high photoelectric conversion efficiency. The highest certified efficiency of small-area single-junction perovskite solar cells has exceeded 27%, demonstrating enormous potential.

[0003] However, perovskite solar cells are quite sensitive to oxygen and moisture. The perovskite layer is prone to reacting with oxygen or water, leading to decomposition and failure. Therefore, it is necessary to improve the stability of perovskite solar cells. Utility Model Content

[0004] In view of this, the present invention provides a perovskite solar cell encapsulation structure to improve the stability of perovskite solar cells.

[0005] This invention provides a perovskite solar cell encapsulation structure, including an insulating substrate, one side surface of which has a device formation region and an electrode lead-out region, and an isolation region located between the device formation region and the electrode lead-out region; a perovskite solar cell device located in the device formation region and an electrode lead-out terminal located in the electrode lead-out region, the electrode lead-out terminal being connected to the electrode of the perovskite solar cell device; a thin film encapsulation layer located on the side surface of the perovskite solar cell device facing away from the insulating substrate, the thin film encapsulation layer extending beyond the side surface of the perovskite solar cell device to at least a portion of the isolation region; a backplate located on the side of the thin film encapsulation layer facing away from the insulating substrate; and an encapsulating adhesive layer located at least in the isolation region, the encapsulating adhesive layer bonding the thin film encapsulation layer and the backplate.

[0006] The thin-film encapsulation layer and the insulating substrate form a sealed space for the perovskite solar cell device, effectively isolating it from external moisture and oxygen. The thin-film encapsulation layer constitutes the first moisture and oxygen barrier. A backplate, fixed to the side of the thin-film encapsulation layer away from the insulating substrate using encapsulating adhesive, forms the second moisture and oxygen barrier. This dual barrier effectively reduces the risk of external moisture and oxygen entering the perovskite solar cell, thus significantly improving its stability. Furthermore, by using encapsulating adhesive for the backplate, with the adhesive at least located in the isolation zone, the edge distance of the encapsulation structure can be further reduced, enhancing its ability to isolate moisture and oxygen and mitigating the impact of corner effects on the encapsulation effect. This effectively improves the stability of the perovskite solar cell in harsh environments, benefiting its performance in practical applications.

[0007] In some alternative embodiments, the thin-film encapsulation layer comprises alternating layers of inorganic and organic materials.

[0008] In some optional embodiments, the inorganic material layer includes an Al2O3 layer, a SnO2 layer, and a SiN layer. x O y One or more of the following: layer, ZnO layer, SiO2 layer, 0 <x<1.33,0<y<2。

[0009] In some alternative embodiments, the organic material layer includes one or more of the following: a pyrene layer, an epoxy ink layer, a polyester ink layer, a polymethyl methacrylate layer, a polyethylene layer, and a polytetrafluoroethylene layer.

[0010] In some optional embodiments, the total number of organic and inorganic material layers in the thin film encapsulation layer is 2-8.

[0011] In some alternative embodiments, the thickness of the inorganic material layer is 5 nm to 200 nm.

[0012] In some alternative embodiments, the thickness of the organic material layer is 1 μm-500 μm.

[0013] In some alternative embodiments, the thin-film encapsulation layer extends to the center of the isolation region, and the coverage area of ​​the thin-film encapsulation layer in the isolation region accounts for 30%-70% of the total area of ​​the isolation region.

[0014] In some alternative embodiments, the encapsulating adhesive layer also extends to the thin-film encapsulation layer and / or the electrode leads on the side of the surface opposite to the insulating substrate.

[0015] In some alternative embodiments, the encapsulating adhesive layer includes one or more of butyl adhesive layer, epoxy resin adhesive layer, and EVA adhesive layer.

[0016] In some alternative embodiments, the insulating substrate comprises a flexible polymer substrate or glass.

[0017] In some alternative embodiments, the back panel includes an aluminum-plastic film, a water-resistant film, or glass.

[0018] In some optional embodiments, the electrodes of the perovskite solar cell device include a first electrode and a second electrode, and the electrode leads include a first electrode lead and a second electrode lead. The first electrode lead is electrically connected to the first electrode, and the second electrode lead is electrically connected to the second electrode. An isolation region is provided between the first electrode lead and the perovskite solar cell device and / or between the second electrode lead and the perovskite solar cell device.

[0019] In some optional embodiments, the perovskite solar cell encapsulation structure further includes: a conductive layer located on one side surface of the insulating substrate, wherein the conductive layer located in the device formation region constitutes an electrode of the perovskite solar cell device; the electrode lead-out end is located on the side surface of the conductive layer opposite to the insulating substrate.

[0020] In some alternative embodiments, the perovskite solar cell device includes a series perovskite solar cell module. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the specific embodiments or related technologies of this utility model, the drawings used in the description of the specific embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0022] Figure 1 This is a schematic diagram of the first perovskite solar cell encapsulation structure according to an embodiment of the present invention.

[0023] Figure 2 This is a schematic diagram of the second perovskite solar cell encapsulation structure according to an embodiment of the present invention.

[0024] Figure 3 This is a schematic diagram of the third perovskite solar cell encapsulation structure according to an embodiment of the present invention.

[0025] Figure 4This is a schematic diagram of the fourth perovskite solar cell encapsulation structure according to an embodiment of the present invention.

[0026] Explanation of reference numerals in the attached figures:

[0027] 1-Insulating substrate; 11-Device formation region; 12-Electrode lead-out region; 13-Isolation region; 21-Conductive layer; 22-First carrier transport layer; 23-Perovskite layer; 24-Top electrode layer; 25-Slotted unit; 251-First slot; 252-Second slot; 253-Third slot; 31-First electrode lead-out terminal; 32-Second electrode lead-out terminal; 4-Thin film encapsulation layer; 5-Backplane; 6-Encapsulation adhesive layer. Detailed Implementation

[0028] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the embodiments described herein are merely illustrative of the present invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, only the parts relevant to the present invention are shown in the drawings, not the entire structure.

[0029] refer to Figure 1 and Figure 2 This utility model provides a perovskite solar cell encapsulation structure, comprising: an insulating substrate 1, one side surface of which has a device formation region 11 and an electrode lead-out region 12, and an isolation region 13 located between the device formation region 11 and the electrode lead-out region 12; a perovskite solar cell device located in the device formation region 11 and an electrode lead-out terminal located in the electrode lead-out region 12, the electrode lead-out terminal being connected to the electrode of the perovskite solar cell device; a thin film encapsulation layer 4 located on the side surface of the perovskite solar cell device facing away from the insulating substrate 1, the thin film encapsulation layer 4 extending at least to a portion of the isolation region 13 through the side surface of the perovskite solar cell device; a backplate 5 located on the side of the thin film encapsulation layer 4 facing away from the insulating substrate 1; and an encapsulating adhesive layer 6 located at least in the isolation region 13, the encapsulating adhesive layer 6 bonding the thin film encapsulation layer 4 and the backplate 5. Figure 1 A schematic diagram of the structure is shown, showing the entire area where the thin-film encapsulation layer 4 extends to the isolation region 13. Figure 2 A schematic diagram of the structure of a portion of the thin-film encapsulation layer 4 extending into the isolation region 13 is shown.

[0030] The thin-film encapsulation layer 4 and the insulating substrate 1 form a sealed space for the perovskite solar cell device, thereby isolating external water vapor and oxygen from entering the perovskite solar cell device. The thin-film encapsulation layer 4 constitutes the first water and oxygen barrier of the perovskite solar cell device. The backplate 5, which is fixed to the side of the thin-film encapsulation layer 4 away from the insulating substrate 1 by encapsulating adhesive, constitutes the second water and oxygen barrier of the perovskite solar cell device. The dual water and oxygen barriers can effectively reduce the risk of external water and oxygen entering the perovskite solar cell device, thereby effectively improving the stability of the perovskite solar cell.

[0031] It should be noted that if the perovskite solar cell encapsulation structure only contains the thin-film encapsulation layer 4 and does not include the backsheet 5, it can only meet the stability requirements of perovskite solar cells under normal operating conditions (such as room temperature, normal humidity, or indoor light). Under severe aging conditions (such as high temperature, high humidity, continuous sunlight exposure, or accelerated aging by ultraviolet lamps), the perovskite layer 23 on the side of the isolation region 13 is affected by the corner effect, and the encapsulation effect of the thin-film encapsulation layer 4 is not ideal. The above aging conditions simulate the high-voltage state in real-world applications, which are environmental conditions that perovskite solar cells need to withstand in practical applications. This application, by using encapsulant to set the backsheet 5 and with the encapsulant layer 6 at least located in the isolation region 13, can further reduce the sealing edge distance of the encapsulation structure, strengthen the ability of the encapsulation structure to isolate water and oxygen, reduce the impact of the corner effect on the encapsulation effect, and thus effectively improve the stability of perovskite solar cells under harsh environments, which is beneficial to the performance of perovskite solar cells in practical applications.

[0032] Preferably, the thin-film encapsulation layer 4 extends beyond the side of the perovskite solar cell device into a portion of the isolation region 13, and the encapsulating adhesive layer 6 is located at least within the isolation region 13. In this case, the thin-film encapsulation layer and the encapsulating adhesive layer together provide moisture barrier for the side of the perovskite solar cell device, effectively improving the damp heat stability of the perovskite solar cell. More preferably, the thin-film encapsulation layer extends to the middle of the isolation region, and the coverage area of ​​the thin-film encapsulation layer in the isolation region accounts for 30%-70% of the total area of ​​the isolation region, such as 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, etc., or any range of the above values.

[0033] Specifically, the encapsulating adhesive layer 6 includes, but is not limited to, one or more of butyl adhesive layer, epoxy resin adhesive layer, and EVA adhesive layer; the backsheet 5 includes, but is not limited to, aluminum-plastic film, water-blocking film, or glass; the insulating substrate 1 is a transparent insulating substrate, and the insulating substrate 1 includes, but is not limited to, a flexible polymer substrate or glass, and the flexible polymer substrate includes, but is not limited to, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyimide (PI). Preferably, the backsheet 5 is a flexible film such as aluminum-plastic film or water-blocking film. Using a flexible film as a backsheet allows for a thinner and lighter encapsulation structure and is suitable for encapsulating flexible perovskite solar cells. The insulating substrate of the flexible perovskite solar cell uses a flexible polymer substrate.

[0034] The thickness of the aluminum-plastic film can be 50μm-200μm, such as 50μm, 60μm, 70μm, 80μm, 90μm, 100μm, 110μm, 120μm, 130μm, 140μm, 150μm, 160μm, 170μm, 180μm, 190μm, 200μm, etc., or any range of the above values.

[0035] The water-blocking membrane may comprise a flexible polymer membrane, a water-blocking layer, and a polymer layer stacked sequentially. The flexible polymer membrane includes, but is not limited to, polyethylene terephthalate (PET) film and polyimide (PI) film. The thickness of the flexible polymer membrane can be 10μm-100μm, such as 10μm, 20μm, 30μm, 40μm, 50μm, 60μm, 70μm, 80μm, 90μm, 100μm, or any range thereof. The water-blocking layer includes, but is not limited to, a silicon dioxide layer, a silicon nitride layer, a titanium dioxide layer, a titanium nitride layer, a zirconium dioxide layer, a zirconium nitride layer, an aluminum oxide layer, and an aluminum nitride layer. The thickness of the water-blocking layer can be 10nm-200nm, such as 10nm, 20nm, 1 ... The thickness of the polymer layer can be nm, 40nm, 60nm, 80nm, 100nm, 120nm, 140nm, 160nm, 180nm, 200nm, etc., or any range of the above values; the polymer layer includes, but is not limited to, polyvinylidene fluoride (PVDF) layer and ethylene-tetrafluoroethylene copolymer (ETFE) layer; the thickness of the polymer layer can be 10μm-500μm, such as 10μm, 50μm, 100μm, 150μm, 200μm, 250μm, 300μm, 350μm, 400μm, 450μm, 500μm, etc., or any range of the above values.

[0036] In some embodiments, the thin film encapsulation layer 4 may include an inorganic material layer and an organic material layer that are alternately stacked. The hydrophobic organic material layer and the inorganic material layer with barrier properties are alternately arranged to form a multiple water and oxygen barrier, which can effectively block the penetration of moisture and oxygen, and further improve the stability of the perovskite solar cell in a harsh environment. At the same time, the organic material layer can provide good mechanical flexibility and buffering effect, and can relieve mechanical damage caused by temperature changes or external stresses, thereby reducing the risk of delamination or peeling.

[0037] Specifically, the organic material layer includes but is not limited to one or more of a parylene layer, an epoxy ink layer, a polyester ink layer, a polymethyl methacrylate layer (PMMA), a high-density polyethylene layer (HDPE), and a polytetrafluoroethylene layer (PTFE); the inorganic material layer has a dense film structure, which includes but is not limited to one or more of an Al2O3 layer, a SnO2 layer, a SiN x O y layer, a ZnO layer, and a SiO2 layer, where 0 < x < 1.33 and 0 < y < 2. Parylene is a p-xylene series polymer, including but not limited to N-type, C-type, D-type, and F-type parylene. The materials of the multiple organic material layers in the thin film encapsulation layer 4 can be the same or different; the materials of the multiple inorganic material layers in the thin film encapsulation layer 4 can be the same or different.

[0038] Specifically, the thickness of the inorganic material layer can be 5 nm - 200 nm, such as 5 nm, 10 nm, 20 nm, 40 nm, 60 nm, 80 nm, 100 nm, 120 nm, 140 nm, 160 nm, 180 nm, 200 nm, etc., or a range composed of any of the above values, preferably 80 nm - 120 nm; the thickness of the organic material layer can be 1 μm - 500 μm, such as 1 μm, 5 μm, 10 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, 450 μm, 500 μm, etc., or a range composed of any of the above values, preferably 5 μm - 20 μm. The thicknesses of the multiple organic material layers in the thin film encapsulation layer 4 can be the same or different; the thicknesses of the multiple inorganic material layers in the thin film encapsulation layer 4 can be the same or different.

[0039] Specifically, the total number of organic and inorganic material layers in the thin-film encapsulation layer can be 2-8, such as 2, 3, 4, 5, 6, 7, 8, or any range of these values. The layer in the thin-film encapsulation layer closest to the perovskite solar cell device can be either an inorganic or organic material layer. For example, when the organic material layer is a pyrene layer, the layer in the thin-film encapsulation layer closest to the perovskite solar cell device can be an organic material layer. The layer in the thin-film encapsulation layer furthest from the perovskite solar cell device can be either an inorganic or organic material layer, preferably an organic material layer.

[0040] refer to Figure 1 The perovskite solar cell device has electrodes including a first electrode and a second electrode. The electrode leads include a first electrode lead 31 and a second electrode lead 32. The first electrode lead 31 is electrically connected to the first electrode, and the second electrode lead 32 is electrically connected to the second electrode. An isolation region 13 exists between the first electrode lead 31 and the perovskite solar cell device, and / or between the second electrode lead 32 and the perovskite solar cell device. The first electrode is a positive electrode, and the second electrode is a negative electrode; or, the first electrode is a negative electrode, and the second electrode is a positive electrode.

[0041] refer to Figure 1 In some embodiments, the encapsulating adhesive layer 6 extends to the side of the thin film encapsulation layer 4 facing away from the insulating substrate 1, which can further enhance the ability of the encapsulation structure to isolate water and oxygen, thereby further improving the stability of perovskite solar cells in harsh environments.

[0042] refer to Figure 3 and Figure 4 In some embodiments, the encapsulating adhesive layer 6 further extends to the surface of the electrode lead-out end facing away from the insulating substrate 1. The encapsulating adhesive fills the gap between the backplate 5 and the insulating substrate 1, located on the side of the device formation region 11, which can further reduce the edge distance of the encapsulation structure, further enhance the ability of the encapsulation structure to isolate water and oxygen, further reduce the impact of the corner effect on the encapsulation effect, and thus further improve the stability of perovskite solar cells in harsh environments. Figure 3 A schematic diagram of the structure is shown, showing the entire area where the thin-film encapsulation layer 4 extends to the isolation region 13. Figure 4 A schematic diagram of the structure of a portion of the thin-film encapsulation layer 4 extending into the isolation region 13 is shown.

[0043] In some optional embodiments, the perovskite solar cell encapsulation structure further includes a conductive layer 21 located on one side surface of the insulating substrate 1, wherein the conductive layer 21 located in the device formation region 11 constitutes an electrode (first electrode or second electrode) of the perovskite solar cell device; the electrode lead-out end is located on the side surface of the conductive layer 21 opposite to the insulating substrate 1. The conductive layer 21 is a transparent conductive layer, and the conductive layer 21 includes, but is not limited to, fluorine-doped tin oxide (FTO), indium tin oxide (ITO), or aluminum-doped zinc oxide (AZO).

[0044] Furthermore, when the thin-film encapsulation layer 4 extends beyond the side of the perovskite solar cell device to a portion of the isolation region 13 and the encapsulating adhesive layer 6 is located at least in the isolation region 13, the surface of the conductive layer 21 exposed outside the thin-film encapsulation layer 4 and the electrode lead-out end is covered with the encapsulating adhesive layer 6. The thin-film encapsulation layer and the encapsulating adhesive layer together play a role in blocking moisture on the side of the perovskite solar cell device, effectively preventing moisture from penetrating along the interface between the conductive layer 21 and the encapsulating adhesive layer 6, thereby effectively improving the damp heat stability of the perovskite solar cell.

[0045] The following is a complete description of the structure of this perovskite solar cell, exemplified by reference: Figure 1 The perovskite solar cell includes a conductive layer 21, a first carrier transport layer 22, a perovskite layer 23, a second carrier transport layer (not shown), and a top electrode layer 24. The first carrier transport layer 22 is located on the side of the conductive layer 21 facing away from the insulating substrate 1, the perovskite layer 23 is located on the side of the first carrier transport layer 22 facing away from the insulating substrate 1, the second carrier transport layer is located on the side of the perovskite layer 23 facing away from the insulating substrate 1, and the composite electrode is located on the side of the second carrier transport layer facing away from the insulating substrate 1.

[0046] The perovskite material in the perovskite layer can be a three-dimensional perovskite. The general structural formula of a three-dimensional perovskite is ABX3, where A is a monovalent cation, B is a divalent cation, and X is a halide ion. A may include, but is not limited to, a methylamino group (MA). + ), formamidin group (FA) + or cesium ions (Cs) + One or more of the following, B including but not limited to Pb 2+ Sn 2+ One or more of these. For example, the perovskite layer material can be FAPbI3, MAPbI3, or Cs. 0.15 FA 0.85 PbI3, Cs 0.08 FA 0.92 PbI3, Cs 0.05 FA 0.95PbI3, etc. The thickness of the perovskite layer can be 400nm-1000nm, such as 400nm, 450nm, 470nm, 500nm, 520nm, 550nm, 570nm, 580nm, 600nm, 700nm, 800nm, 900nm, 1000nm, etc., or any range of the above values; preferably 450nm-600nm.

[0047] In some optional embodiments, the first carrier transport layer can be a hole transport layer (HTL) and the second carrier transport layer can be an electron transport layer (ETL), in which case the perovskite solar cell is an inverted perovskite solar cell. In other optional embodiments, the first carrier transport layer can be an electron transport layer (ETL) and the second carrier transport layer can be a hole transport layer (HTL), in which case the perovskite solar cell is a conventional perovskite solar cell.

[0048] The hole transport layer material includes one or more of inorganic hole transport materials and organic hole transport materials; the inorganic hole transport materials include, but are not limited to, nickel oxide (NiO). x The organic hole transport materials include, but are not limited to, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), polytriarylamine (PTAA), 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (Spiro-OMeTAD), N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine, [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphate (Me-4PACz), N,N,N',N'-tetraphenyl-p-diaminobiphenyl (TPD), poly(3-hexylthiophene-2,5-diyl) (P3HT), N,N'-di-1-naphthyl-N,N'-diphenylbenzidine (NPD), and 4,4'-bis(diphenylamino)biphenyl (TPBD). The thickness of the hole transport layer can be 5nm-200nm, such as 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 13nm, 14nm, 15nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 160nm, 170nm, 180nm, 190nm, 200nm, etc., or any range of the above values.

[0049] The electron transport layer materials include inorganic electron transport materials and organic electron transport materials. The inorganic electron transport materials include, but are not limited to, titanium dioxide, tin oxide, or zinc oxide; the organic electron transport materials include, but are not limited to, fullerene C. 60 Fullerene C 70 [6,6]-Phenylacetic-C71-Butyrate Methyl Ester (PC) 71 BM), [6,6]-phenyl-C61-butyrate methyl ester (PC) 61 BM), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), N-phenyl-2-hexyl

[60] fullerenepyrrolidine (PC) 61 H), bis

[60] PCBM (bis-PCBM), 3,4,9,10-perylenetetracarboxylic acid dibenzimidazole (PTCBI), N,2-diphenyl

[60] fullerenepyrrolidine (PC) 61 P). The thickness of the electron transport layer can be 5nm-30nm, such as 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, or any range of the above values.

[0050] The materials and thicknesses of the electron transport layer and hole transport layer can be selected based on the battery structure type (formal or inverse) and the manufacturing process.

[0051] For example, the electron transport layer in an inverted perovskite solar cell can be a composite layer consisting of a first layer and a second layer stacked together. The first layer is located on the surface of the perovskite layer facing away from the insulating substrate, and the second layer is located on the surface of the first layer facing away from the perovskite layer. The first sublayer can be a fullerene C 60 Layer, [6,6]-phenyl-C61-butyrate methyl ester (PC) 61 The first sublayer can be a BM layer, etc., and the second sublayer can be a 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) layer, a SnO2 layer, etc. The thickness of the first sublayer can be 15nm-30nm, such as 15nm, 16nm, 17nm, 18nm, 19nm, 20nm, 25nm, 30nm, etc., or any range of the above values; the thickness of the second sublayer can be less than or equal to 15nm, such as 1nm, 2nm, 3nm, 3.8nm, 4nm, 5nm, 10nm, 15nm, etc., or any range of the above values.

[0052] In inverted perovskite solar cells, the hole transport layer can be made of one or more of the following: nickel oxide, aluminum oxide, cuprous thiocyanate, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), and polytriarylamine (PTAA). The thickness of the hole transport layer can be 5 nm to 15 nm, such as 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, or any range of the above values. The hole transport layer can be a composite layer consisting of a nickel oxide layer and self-organized monolayers (SAMs) stacked together. The self-organized monolayers are located between the nickel oxide layer and the perovskite layer. The materials of the self-organized monolayers include, but are not limited to, [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphoric acid (MeO-2PACz).

[0053] The top electrode layer can be an Ag layer, Au layer, Al layer, Cu layer, Ni layer, or Mo layer, or it can be a composite electrode. The composite electrode comprises a first electrode layer, a second electrode layer, and a third electrode layer stacked sequentially, with the first electrode layer located between the second carrier transport layer and the second electrode layer; the first electrode layer is a transparent conductive oxide layer, the second electrode layer is a bismuth metal layer or a bismuth alloy layer, and the third electrode layer has a conductivity of 1.8 × 10⁻⁶ at 20°C. 7 S / m - 6.8 × 10 7 S / m. Utilizing the chemical inertness of metallic bismuth, the second electrode layer effectively blocks the migration of halide ions from the perovskite layer, thereby preventing halide ions from reacting chemically with the third electrode layer. This reduces the impact of halide ion migration on the photoelectric performance of the perovskite solar cell and improves its photothermal stability. Simultaneously, the chemical inertness of metallic bismuth makes it difficult for it to react with moisture and oxygen, which is beneficial for improving the environmental stability of the perovskite solar cell. The insertion of the first electrode layer optimizes energy level matching, which is beneficial for improving carrier transport efficiency and thus reducing the photoelectric conversion efficiency loss caused by the second electrode layer, thereby improving the photoelectric conversion efficiency of the perovskite solar cell. Therefore, the insertion of both the first and second electrode layers allows perovskite solar cells to simultaneously achieve good photothermal stability and photoelectric conversion efficiency.

[0054] For example, the transparent conductive oxide layer includes, but is not limited to, one or more of ITO, AZO, IZO, and IWO layers; ITO is indium tin oxide, and the Sn doping concentration can be 5at%-10at%, such as 5at%, 5.5at%, 6at%, 6.5at%, 7at%, 7.5at%, 8at%, 8.5at%, 9at%, 9.5at%, 10at%, etc., or any range of the above values; AZO is aluminum-doped zinc oxide, and the Al doping concentration can be 1at%-5at%, such as 1at%, 1.5at%, 2at%, 2.5at%, 3at%, 3.5at%, 4at%, 4.5at%, 5at%, etc. The concentration of Zn in indium oxide (IZO) can be 5 at% to 10 at%, such as 5 at%, 5.5 at%, 6 at%, 6.5 at%, 7 at%, 7.5 at%, 8 at%, 8.5 at%, 9 at%, 9.5 at%, 10 at%, etc., or any range of the above values; the concentration of W in indium oxide (IWO) can be 0.5 at% to 5 at%, such as 0.5 at%, 1 at%, 1.5 at%, 2 at%, 2.5 at%, 3 at%, 3.5 at%, 4 at%, 4.5 at%, 5 at%, etc., or any range of the above values.

[0055] For example, the material of the third electrode layer includes, but is not limited to, one or more of Ag, Au, Al, Cu, Ni or Mo.

[0056] The thickness of the first electrode layer can be 10nm-30nm, such as 10nm, 15nm, 20nm, 25nm, 30nm, or any range of the above values; the thickness of the second electrode layer can be 10nm-170nm, such as 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 160nm, 170nm. The thickness of the first electrode layer and the second electrode layer in the composite electrode can be 20nm-200nm, such as 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 160nm, 170nm, 180nm, 190nm, 200nm, etc., or any of the above values. The thickness of the third electrode layer is 5nm-150nm, such as 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, etc., or any of the above values.

[0057] In some alternative embodiments, the perovskite solar cell may further include a passivation layer (not shown) located at the interface between the first carrier transport layer 22 and the perovskite layer 23 and / or the interface between the second carrier transport layer and the perovskite layer 23 to passivate lower interface defects and / or upper interface defects of the perovskite layer 23. The passivation layer material may be selected as needed, such as phenylethylamine hydroiodate (PEAI).

[0058] refer to Figure 1The perovskite solar cell device can be a series perovskite solar cell module. Based on the above perovskite solar cell, the series perovskite solar cell module further includes a plurality of groove units 25 repeatedly arranged along the extension direction of the insulating substrate 1. Each groove unit 25 includes a first groove 251, a second groove 252 and a third groove 253. The extension directions of the first groove 251, the second groove 252 and the third groove 253 are parallel to each other and intersect with the arrangement direction of the plurality of groove units 25. The first groove 251 penetrates the conductive layer 21 and the first carrier transport layer 22, and at least the perovskite layer 23 is deposited on the bottom and sidewalls of the first groove 251. The second groove 252 penetrates the perovskite layer 23 and the first carrier transport layer 22, and at least the second carrier transport layer and the top electrode layer 24 are deposited on the bottom and sidewalls of the second groove 252. The third groove 253 penetrates the top electrode layer 24, the second carrier transport layer, the perovskite layer 23, and the first carrier transport layer 22, and the thin film encapsulation layer 4 is deposited in the third groove 253. The first groove 251, the second groove 252, and the third groove 253 together divide the perovskite solar cell into at least one sub-cell. The conductive layer 21 located in the device formation region 11 constitutes the bottom electrode layer of the sub-cell. When there are at least two sub-cells, multiple sub-cells are connected in series through the first groove 251, the second groove 252, and the third groove 253. The first electrode lead-out end 31 and the second electrode lead-out end 32 can be located on both sides of the device formation area 11, and the direction from the first electrode lead-out end 31 to the second electrode lead-out end 32 is parallel or substantially parallel to the arrangement direction of the slot unit 25. The bottom electrode layer of the sub-cell near the first electrode lead-out end 31 is connected to the first electrode lead-out end 31 through the conductive layer 21 connected thereto. The top electrode layer 24 of the sub-cell near the second electrode lead-out end 32 is connected to the conductive layer 21 and the second electrode lead-out end 32 through the third slot 253.

[0059] Optionally, when the tandem perovskite solar cell module contains a lower interface passivation layer located at the interface between the first carrier transport layer 22 and the perovskite layer 23, the first slot 251, the second slot 252, and the third slot 253 all penetrate the lower interface passivation layer; when the tandem perovskite solar cell module contains an upper interface passivation layer located at the interface between the second carrier transport layer and the perovskite layer 23, the second slot 252 and the third slot 253 both penetrate the upper interface passivation layer.

[0060] For example, the fabrication method of the perovskite solar cell encapsulation structure includes the following steps:

[0061] A conductive substrate is provided, the conductive substrate including an insulating substrate 1 and a conductive layer 21 located on one side surface of the insulating substrate 1;

[0062] A series perovskite solar cell module, a first electrode lead-out terminal 31, and a second electrode lead-out terminal 32 are formed on the surface of the conductive layer 21 facing away from the insulating substrate 1. The first electrode lead-out terminal 31 and the second electrode lead-out terminal 32 are located on both sides of the series perovskite solar cell module. The first electrode lead-out terminal 31 is connected to the first electrode of the series perovskite solar cell module, and the second electrode lead-out terminal 32 is connected to the second electrode of the series perovskite solar cell module.

[0063] A thin film encapsulation layer 4 is formed on the side surface of the tandem perovskite solar cell module away from the conductive substrate. The thin film encapsulation layer 4 extends through the side of the tandem perovskite solar cell module to at least a portion of the isolation region 13 between the tandem perovskite solar cell module and the first electrode lead-out terminal 31, and between the tandem perovskite solar cell module and the second electrode lead-out terminal 32.

[0064] Encapsulating adhesive is applied to the side of the thin film encapsulation layer 4 that is away from the conductive substrate. A backplate 5 is placed on the side of the encapsulating adhesive that is away from the conductive substrate. The backplate 5 is bonded to the surface of the thin film encapsulation layer 4 using a lamination process, and the encapsulating adhesive layer 6 is located at least in the isolation region 13.

[0065] The process for forming the thin-film encapsulation layer 4 includes, but is not limited to, one or more of atomic layer deposition (ALD) and magnetron sputtering. For example, an inorganic material layer covering the tandem perovskite solar cell module can be formed first using ALD, followed by the preparation of alternating organic and inorganic material layers: the organic material layer can be prepared using vacuum evaporation, and the inorganic material layer can be prepared using magnetron sputtering.

[0066] Optionally, the perovskite solar cell encapsulation structure can be constructed by first connecting the wires used for conducting current to the electrode leads, and then sequentially depositing the thin film encapsulation layer 4 and bonding the backsheet 5; or the thin film encapsulation layer 4 can be deposited first, and then etched to expose at least part of the electrode leads, and then the backsheet 5 can be bonded after connecting the wires to the electrode leads.

[0067] The embodiments of the technical solution of this application are described in detail below. The following embodiments are only used to illustrate the technical solution of this application more clearly, and are therefore only examples, and should not be used to limit the scope of protection of this application.

[0068] Example 1

[0069] This embodiment provides a perovskite solar cell encapsulation structure, the preparation method of which includes:

[0070] A PI / ITO flexible conductive film is used as the conductive substrate. The conductive substrate has a size of 30cm×40cm. The conductive substrate has a device formation area, a first electrode lead-out area and a second electrode lead-out area. The first electrode lead-out area and the second electrode lead-out area are located on both sides of the device formation area. The conductive substrate also includes an isolation area located between the device formation area and the first electrode lead-out area, and between the device formation area and the second electrode lead-out area.

[0071] A series perovskite solar cell module is formed in the device formation region. The film structure of the series perovskite solar cell module along the direction away from the conductive substrate is NiO. x / Cs 0.08 FA 0.92 PbI3 / C 60 / SnO2 / ITO / Bi / Cu, where the hole transport layer is NiO x The thickness is 15 nm, and the perovskite layer Cs 0.08 FA 0.92 The thickness of PbI3 is 550 nm, and the electron transport layer contains C. 60 The thickness of the layer is 25 nm, the thickness of the SnO2 layer in the electron transport layer is 15 nm, the thickness of the ITO layer in the top electrode layer is 10 nm, the thickness of the Bi layer in the top electrode layer is 30 nm, and the thickness of the Cu layer in the top electrode layer is 120 nm.

[0072] First electrode leads and second electrode leads are deposited in the first electrode lead-out region and the second electrode lead-out region, respectively. The material of the first electrode leads and the second electrode leads is conductive copper paste with a thickness of 400 μm.

[0073] A thin-film encapsulation layer is formed on the side of the tandem perovskite solar cell module away from the conductive substrate, and the thin-film encapsulation layer extends through the side of the tandem perovskite solar cell module to the entire area of ​​the isolation region: First, a dense Al2O3 layer is deposited using atomic layer deposition (ALD); then, a C-type pyrene layer is formed on the surface of the Al2O3 layer using evaporation, and an Al2O3 layer is formed on the surface of the C-type pyrene layer using magnetron sputtering, until a thin-film encapsulation layer with the following film structure is formed: Al2O3 layer - C-type pyrene layer - Al2O3 layer - C-type pyrene layer - Al2O3 layer - C-type pyrene layer; wherein the thickness of the C-type pyrene layer is 10 μm, and the thickness of the Al2O3 layer is 100 nm.

[0074] Butyl adhesive is coated on the surface of the thin film encapsulation layer, and an aluminum-plastic film is placed on the surface of the butyl adhesive as a backing. The butyl adhesive is cured by lamination process to obtain a butyl adhesive layer and the aluminum-plastic film is fixed on the surface of the thin film encapsulation layer. The orthogonal projection of the butyl adhesive layer on the conductive substrate corresponds to the entire area formed by the device formation area, the first electrode lead-out area, the second electrode lead-out area and the isolation area. The thickness of the aluminum-plastic film is 90μm.

[0075] Example 2

[0076] This embodiment provides a perovskite solar cell encapsulation structure, which differs from the perovskite solar cell encapsulation structure provided in Embodiment 1 only in that a water-blocking film is used as the backsheet. The water-blocking film comprises a 20 μm thick PI film, a 100 nm thick TiO2 water-blocking layer, and a 100 μm thick ETFE layer, which are stacked sequentially.

[0077] Example 3

[0078] This embodiment provides a perovskite solar cell encapsulation structure, which differs from the perovskite solar cell encapsulation structure provided in Embodiment 1 only in that: the thin film encapsulation layer extends through the side of the series perovskite solar cell module to a part of the isolation area, and the coverage area of ​​the thin film encapsulation layer in the isolation area accounts for 50% of the total area of ​​the isolation area.

[0079] Example 4

[0080] This embodiment provides a perovskite solar cell encapsulation structure, the preparation method of which includes:

[0081] FTO conductive glass is used as the conductive substrate, and the size of the conductive substrate is 30cm×40cm. The conductive substrate has a device formation area, a first electrode lead-out area and a second electrode lead-out area, which are located on both sides of the device formation area. The conductive substrate also includes an isolation area located between the device formation area and the first electrode lead-out area, and between the device formation area and the second electrode lead-out area.

[0082] A series perovskite solar cell module is formed in the device formation region. The film structure of the series perovskite solar cell module along the direction away from the conductive substrate is SnO2 / Cs. 0.08 FA 0.92 The structure is PbI3 / P3HT / ITO / Cu, where the electron transport layer SnO2 has a thickness of 20 nm, and the perovskite layer Cs... 0.08 FA 0.92 The thickness of PbI3 is 480 nm, the thickness of hole transport layer P3HT is 20 nm, the thickness of ITO layer in top electrode layer is 40 nm, and the thickness of Cu layer in top electrode layer is 80 nm.

[0083] First electrode leads and second electrode leads are deposited in the first electrode lead-out region and the second electrode lead-out region, respectively. The material of the first electrode leads and the second electrode leads is conductive copper paste with a thickness of 400 μm.

[0084] A thin-film encapsulation layer is formed on the side of the tandem perovskite solar cell module away from the conductive substrate, and the thin-film encapsulation layer extends through the side of the tandem perovskite solar cell module to the entire area of ​​the isolation region: First, a dense Al2O3 layer is deposited using atomic layer deposition (ALD); then, a C-type pyrene layer is formed on the surface of the Al2O3 layer using evaporation, and an Al2O3 layer is formed on the surface of the C-type pyrene layer using magnetron sputtering, until a thin-film encapsulation layer with the following film structure is formed: Al2O3 layer - C-type pyrene layer - Al2O3 layer - C-type pyrene layer - Al2O3 layer - C-type pyrene layer; wherein the thickness of the C-type pyrene layer is 10 μm, and the thickness of the Al2O3 layer is 100 nm.

[0085] Butyl adhesive is coated on the surface of the thin film encapsulation layer, and glass is placed on the surface of the butyl adhesive as a backing plate. The butyl adhesive is cured by lamination process to obtain a butyl adhesive layer and the glass is fixed on the surface of the thin film encapsulation layer. The orthogonal projection of the butyl adhesive layer on the conductive substrate corresponds to the entire area formed by the device formation area, the first electrode lead-out area, the second electrode lead-out area and the isolation area.

[0086] Comparative Example 1

[0087] This comparative example provides a perovskite solar cell encapsulation structure, which differs from the perovskite solar cell encapsulation structure provided in Example 1 only in that the encapsulation structure does not contain a backsheet and a butyl rubber layer.

[0088] Comparative Example 2

[0089] This comparative example provides a perovskite solar cell encapsulation structure, which differs from the perovskite solar cell encapsulation structure provided in Example 1 only in that: neither the electrode lead-out end nor the isolation area of ​​the encapsulation structure is provided with a butyl adhesive layer and a backplate.

[0090] Comparative Example 3

[0091] This comparative example provides a perovskite solar cell encapsulation structure, which differs from the perovskite solar cell encapsulation structure provided in Example 1 only in that: the encapsulation structure does not contain a thin film encapsulation layer, and the device formation area, electrode lead-out end and isolation area are all provided with butyl adhesive layer and backplate.

[0092] Comparative Example 4

[0093] This comparative example provides a perovskite solar cell, which differs from the perovskite solar cell encapsulation structure provided in Example 1 only in that it is not encapsulated, i.e., it does not contain a thin film encapsulation layer, a backsheet, or a butyl rubber layer.

[0094] Stability test:

[0095] 1. Using an AM1.5G solar simulator, 100mW / cm² was provided to the tandem perovskite solar cell module in the perovskite solar cell encapsulation structure. 2 Under illumination, the current-voltage characteristic curve of the tandem perovskite solar cell module was measured using a digital source meter, and the initial maximum output power P of the tandem perovskite solar cell module was obtained. mpp and P mpp The corresponding voltage V mpp Current density J mpp .

[0096] 2. Photothermal stability test: The perovskite solar cell encapsulation structure was placed in an air environment at 50℃, and an intensity of 100mW / cm² was applied using an AM1.5G solar simulator. 2 Under continuous illumination, the test software performs a perturbation test at the maximum output power point every 2 minutes, continuously tracks the maximum output power Pmpp' and records the time T95 during which the maximum output power retention rate reaches 95%. Photoelectric efficiency retention rate = Pmpp' / Pmpp × 100%.

[0097] 3. Damp-heat stability test: The perovskite solar cell encapsulation structure was placed in an environment of 85℃ and 85%RH. The test software performed a perturbation test at the maximum output power point every 2 minutes, continuously tracked the maximum output power Pmpp' and recorded the time T90 during which the maximum output power retention rate reached 90%.

[0098] 4. Accelerated Aging Test under Ultraviolet Irradiation: The perovskite solar cell encapsulation structure was placed in an air environment, and an ultraviolet light source with a power of 25mW / cm² was applied. 2 Under continuous illumination, the test software performs a perturbation test at the maximum output power point every 2 minutes, continuously tracks the maximum output power Pmpp' and records the time T90 during which the maximum output power retention rate reaches 90%.

[0099] 5. Damp-heat and light-induced stability test: The perovskite solar cell encapsulation structure was placed in an environment of 85℃ and 85%RH, and an intensity of 100mW / cm² was applied using an AM1.5G solar simulator. 2 Under continuous illumination, the test software performs a perturbation test at the maximum output power point every 2 minutes, continuously tracks the maximum output power Pmpp' and records the time T80 during which the maximum output power retention rate reaches 80%.

[0100] The perovskite solar cell modules provided in Examples 1-4 and Comparative Examples 1-4 were subjected to the above stability tests, and the test results are shown in Table 1. Multiple perovskite solar cell modules from the same example or comparative example, subjected to different stability tests, were prepared in the same batch, and the effective area of ​​each module was 100 cm². 2 .

[0101] Table 1

[0102]

[0103] As shown in Table 1, compared to the unencapsulated perovskite solar cell in Comparative Example 4, encapsulating the perovskite solar cells in Examples 1-3 and Comparative Examples 1-3 significantly improves their stability. Referring to the photothermal stability test results, the encapsulation structures of Examples 1-3 and Comparative Examples 1-3 exhibit good stability under normal operating conditions. Referring to the damp heat stability, UV-accelerated aging, and damp heat-photothermal stability test results, the encapsulation structure of Comparative Example 1-3 shows poor stability under harsh environments, while the encapsulation structure of Examples 1-3 demonstrates better stability.

[0104] In this document, the term "implementation" means that a specific feature, structure, or characteristic described in connection with an implementation can be included in at least one implementation of this application. The appearance of this phrase in various places in the specification does not necessarily refer to the same implementation, nor is it a separate or alternative implementation mutually exclusive with other implementations. It will be explicitly and implicitly understood by those skilled in the art that the implementations described herein can be combined with other implementations.

[0105] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the application; the terms “comprising” and “having”, and any variations thereof, in the specification, claims, and foregoing description of the drawings are intended to cover non-exclusive inclusion.

[0106] Where specific techniques or conditions are not specified in the examples, they shall be performed in accordance with the techniques or conditions described in the literature in this field or in accordance with the product instructions. Reagents or instruments whose manufacturers are not specified are all commercially available conventional products.

[0107] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this utility model, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0108] The above description is merely a preferred embodiment of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described above, and various obvious changes, readjustments, combinations, and substitutions can be made without departing from the protection scope of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention. The protection scope of the present invention is determined by the scope of the appended claims.

Claims

1. A perovskite solar cell encapsulation structure, characterized in that, include: An insulating substrate, wherein one side surface of the insulating substrate has a device formation region and an electrode lead-out region, and an isolation region located between the device formation region and the electrode lead-out region; The perovskite solar cell device is located in the device formation region and the electrode lead-out terminal is located in the electrode lead-out region, wherein the electrode lead-out terminal is connected to the electrode of the perovskite solar cell device; A conductive layer located on one side surface of the insulating substrate, and a conductive layer located in the device formation region constitute the electrode of the perovskite solar cell device, with the electrode lead-out end located on the side surface of the conductive layer opposite to the insulating substrate. A thin-film encapsulation layer is located on the side surface of the perovskite solar cell device facing away from the insulating substrate, and the thin-film encapsulation layer extends through the side of the perovskite solar cell device to a portion of the isolation region; A backplate located on the side of the thin-film encapsulation layer opposite to the insulating substrate; An encapsulating adhesive layer is located at least in the isolation area, the encapsulating adhesive layer bonding the thin film encapsulation layer and the backplate.

2. The perovskite solar cell encapsulation structure according to claim 1, characterized in that, The thin-film encapsulation layer comprises alternating layers of inorganic and organic materials.

3. The perovskite solar cell encapsulation structure according to claim 2, characterized in that, The inorganic material layer comprises one or more of an Al2O3 layer, a SnO2 layer, a SiN x O y layer, a ZnO layer, a SiO2 layer, 0 < x < 1.33, 0 < y < 2; and / or, The organic material layer includes one or more of the following: a pyrene layer, a polymethyl methacrylate layer, a polyethylene layer, and a polytetrafluoroethylene layer; and / or, The total number of organic and inorganic material layers in the thin film encapsulation layer is 2-8.

4. The perovskite solar cell encapsulation structure according to claim 2, characterized in that, The thickness of the inorganic material layer is 5nm-200nm; and / or the thickness of the organic material layer is 1μm-500μm.

5. The perovskite solar cell encapsulation structure according to claim 1, characterized in that, The thin-film encapsulation layer extends to the middle of the isolation area, and the coverage area of ​​the thin-film encapsulation layer in the isolation area accounts for 30%-70% of the total area of ​​the isolation area.

6. The perovskite solar cell encapsulation structure according to claim 1, characterized in that, The encapsulating adhesive layer also extends to the thin film encapsulation layer and / or the side surface of the electrode lead-out terminal facing away from the insulating substrate.

7. The perovskite solar cell encapsulation structure according to claim 1, characterized in that, The encapsulating adhesive layer includes one or more of butyl adhesive layer, epoxy resin adhesive layer, and EVA adhesive layer; and / or, The insulating substrate comprises a flexible polymer substrate or glass; and / or, The back panel includes aluminum-plastic film, water-resistant film, or glass.

8. The perovskite solar cell encapsulation structure according to claim 1, characterized in that, The electrodes of the perovskite solar cell device include a first electrode and a second electrode. The electrode leads include a first electrode lead and a second electrode lead. The first electrode lead is electrically connected to the first electrode, and the second electrode lead is electrically connected to the second electrode. An isolation region is formed between the first electrode lead and the perovskite solar cell device and / or between the second electrode lead and the perovskite solar cell device.

9. The perovskite solar cell encapsulation structure according to any one of claims 1 to 8, characterized in that, The perovskite solar cell device includes a series perovskite solar cell module.

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