Plasma transition device for a de-bonding apparatus and de-bonding apparatus
By incorporating a plasma transition device into the descrambling equipment and utilizing a partition and sealing ring design, the problem of wafer damage during plasma descrambling was solved, achieving uniform plasma distribution and stable equipment operation, thereby improving product yield and reducing maintenance costs.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- RONGXIN SEMICONDUCTOR (NINGBO) CO LTD
- Filing Date
- 2025-06-24
- Publication Date
- 2026-07-31
AI Technical Summary
Existing plasma resist removal devices cause uneven resist removal and wafer damage, especially resulting in deformation of integrated circuit chips or wafers, because the plasma beam directly acts on the wafer surface during the resist removal process.
A plasma transition device, including a partition and a focusing adapter, is set between the plasma generation chamber and the debinding reaction chamber. The plasma distribution is changed by the through holes and sealing ring design on the partition to avoid direct action on the wafer surface, and the sealing ring made of polytetrafluoroethylene material prevents plasma leakage and abnormal glow discharge.
This achieves uniform plasma distribution, avoids wafer damage, reduces arc discharge, improves product yield and equipment operational stability, and reduces maintenance costs.
Smart Images
Figure CN224583643U_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor manufacturing equipment technology, and specifically to a plasma transfer device and a resist removal device for resist removal equipment. Background Technology
[0002] After the etching process of semiconductors is completed, the photoresist on the surface of the semiconductor silicon wafer needs to be removed. The photoresist is used as a pattern transfer medium from the photomask to the surface of the silicon wafer and as a barrier layer for the etched area. Once the etching is completed, the photoresist on the silicon wafer surface is no longer useful. Usually, it is necessary to remove the photoresist on the wafer surface and some residues generated during the etching process.
[0003] Existing dry plasma resist removal technology removes photoresist by reacting oxygen atoms with it in a plasma environment within a resist removal device. While plasma resist removal has many advantages, existing plasma resist removal devices all have some problems, such as: the plasma beam directly acting on the wafer surface can lead to uneven resist removal due to uneven conductivity on the sample surface, and can also damage the wafer surface, resulting in deformation of integrated circuit chips or wafers. Summary of the Invention
[0004] To address the aforementioned technical problems, this technical solution provides a plasma transition device for a resist stripping equipment. This device can alter the distribution of plasma as it enters the resist stripping reaction chamber, effectively preventing the plasma beam from directly impacting the wafer surface and causing wafer damage. This effectively solves the aforementioned problems.
[0005] This invention is achieved through the following technical solution: A plasma transition device for a glue removal equipment is provided, which is disposed between a plasma generation chamber and a glue removal reaction chamber. The device includes a partition plate disposed on the top of the glue removal reaction chamber, a top cover fixedly installed on the upper side of the partition plate, a focusing adapter being engaged between the top cover and the partition plate, the bottom of the focusing adapter contacting the top surface of the partition plate, and the top of the focusing adapter penetrating the top cover and communicating with the plasma generation chamber through a pipe; the partition plate has multiple through holes in the middle.
[0006] Furthermore, a sealing ring is provided at the junction of the bottom of the focusing adapter and the partition plate to ensure a sealed connection between the focusing adapter and the partition plate and prevent plasma leakage.
[0007] Furthermore, the sealing ring is a Teflon ring, a sealing ring made of polytetrafluoroethylene material; it is set at the inner edge where the top cover contacts the partition and at the outer edge where the focusing adapter contacts the partition.
[0008] Furthermore, the thickness of the middle part and the edge of the partition is the same, and the thickness is greater than or equal to 8 mm.
[0009] Furthermore, the partition plate has densely distributed through-hole sections at the position corresponding to the wafer in the degumming reaction chamber, and sparsely distributed through-hole sections are provided around the densely distributed through-hole sections; the density of through-holes in the densely distributed through-hole sections is greater than the density of through-holes in the sparsely distributed through-hole sections.
[0010] Furthermore, a sealing outer ring is provided at the connection between the top of the focusing adapter and the pipe.
[0011] The present invention also provides a degumming device, which includes a plasma transition device for a degumming device as described above. Beneficial effects
[0012] The plasma transition device for adhesive removal equipment proposed in this invention has the following advantages compared with the prior art: This technical solution is located between the plasma generation chamber and the resist removal reaction chamber, and is combined with a focusing adapter, a partition plate located on the top of the resist removal reaction chamber, and through holes on the partition plate. After the plasma is output from the plasma generation chamber, it first enters this device for transition, and then is evenly input into the resist removal reaction chamber after passing through the transition device. This can change the distribution of plasma when it enters the resist removal reaction chamber, so that the plasma can contact the wafer surface evenly, effectively avoiding the plasma beam directly acting on the wafer surface when the plasma enters the resist removal reaction chamber, thus preventing wafer damage.
[0013] In this technical solution, the sealing ring is made of polytetrafluoroethylene material and is embedded in the edge of the connection between the partition and the top cover with an interference fit. This composite sealing system can effectively reduce leakage caused by plasma penetration, reduce abnormal glow discharge phenomenon at the contact point between the top cover and the partition, and reduce the generation of electric arc.
[0014] The partition in this technical solution uses a partition with a consistent thickness of 8 mm or more in the center and along the edges, increasing the thickness of the central region. This enhances the rigidity of the component from a structural mechanics perspective, effectively suppressing thermal deformation. This prevents the partition from deforming due to heat conduction during contact with plasma, thus preventing the gap at the connection between the top cover and the focusing adapter from continuously widening due to deformation. Simultaneously, a sealing ring made of polytetrafluoroethylene (PTFE) is installed at the assembly point of the partition and the top cover as a sealing and isolation component. This forms an effective barrier at the physical level, preventing plasma from penetrating into the connection gap area, thereby avoiding abnormal glow discharge phenomena caused by plasma leakage and significantly reducing the arcing rate. Attached Figure Description
[0015] Figure 1This is a schematic diagram of the overall structure of the present invention.
[0016] Figure 2 This is a schematic diagram of the partition structure in this invention.
[0017] Figure 3 This is a schematic diagram of the periodic VPD test data results in the embodiment.
[0018] Figure 4 This is a schematic diagram of the daily monitoring particle test data results in the embodiment.
[0019] The labels in the attached diagram are: 1-Degumming reaction chamber, 2-Pipe, 3-Sealing outer ring, 4-Baffle, 41-Through hole, 5-Top cover, 6-Focusing adapter, 7-Sealing ring, 8-Screw. Detailed Implementation
[0020] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments. The described embodiments are merely some embodiments of the present invention, and not all embodiments. Various modifications and improvements made to the technical solutions of the present invention by those skilled in the art without departing from the design concept of the present invention should fall within the protection scope of the present invention. Example 1
[0021] like Figure 1 As shown, a plasma transition device for a glue removal equipment is provided. The device is located between a plasma generation chamber and a glue removal reaction chamber 1. The device includes a partition 4 located on the top of the glue removal reaction chamber 1. A top cover 5 is fixedly installed on the upper side of the partition 4 by screws 8. A focusing adapter 6 is clamped between the top cover 5 and the partition 4. The focusing adapter 6 uses a quartz reaction hood during use. The bottom of the focusing adapter 6 contacts the top surface of the partition 4. The top of the focusing adapter 6 passes through the top cover 5 and communicates with the plasma generation chamber through a pipe 2. A sealing outer ring 3 is provided at the connection between the top of the focusing adapter 6 and the pipe 2. The sealing outer ring 3 adopts a conventional device in the art to seal and connect the connecting pipe at the top of the focusing adapter 6 to the pipe 2 and make the two connected.
[0022] like Figure 2 As shown, the partition 4 has a plurality of through holes 41 in the middle; the partition 4 has a dense distribution of through holes at the position corresponding to the wafer in the degumming reaction chamber 2, and a sparse distribution of through holes is provided around the dense distribution of through holes; the density of through holes in the dense distribution of through holes is greater than the density of through holes in the sparse distribution of through holes.
[0023] This device can transition the plasma after it is output from the plasma generation chamber, and input it into the desizing reaction chamber through multiple through holes distributed on the partition plate. This can change the distribution of plasma when it enters the desizing reaction chamber, so that the plasma can enter the desizing reaction chamber evenly. This effectively avoids the plasma beam directly acting on the wafer surface when the plasma enters the desizing reaction chamber, thus preventing wafer damage. Example 2
[0024] In the device of Example 1, the partition and the top cover are assembled with screws, and there is inevitably an assembly gap between the two contact surfaces. Secondly, during the operation of the device, the high temperature environment in the chamber and the thermal effect of the plasma will cause the partition to undergo slight deformation, which will further widen the gap between the two contact surfaces. The plasma will enter the connection between the top cover and the partition and cause an abnormal glow discharge phenomenon, resulting in an arc discharge phenomenon. This arc discharge phenomenon may lead to the risk of low product yield and scrap.
[0025] To solve this problem, the inventors made further improvements to Example 1; specifically, the improvements are as follows: like Figure 2 As shown, a partition 4 with a uniform thickness in the middle and along the edges is used, and the thickness of the partition 4 is controlled to be 8 mm or more; in this embodiment, a partition with a thickness of 10 mm is used. A sealing ring 7 is provided at the junction of the bottom of the focusing adapter 6 and the partition 4 to ensure a sealed connection between the focusing adapter 6 and the partition 4 and prevent plasma leakage. The sealing ring 7 is a Teflon ring, a sealing ring made of polytetrafluoroethylene material; it is located at the inner edge where the top cover 5 contacts the partition 4, and at the outer edge of the contact surface between the focusing adapter 6 and the partition 4.
[0026] The partition is made with a thickness of 8 mm or more, consistent throughout its center and edges, increasing the thickness of the central region. This structurally enhances component rigidity, effectively suppressing thermal deformation and preventing deformation due to heat conduction during plasma contact. This prevents the gap between the top cover and the focusing adapter from widening due to deformation. Simultaneously, a PTFE sealing ring is installed at the assembly point of the partition and top cover as a sealing and isolation component. This forms an effective physical barrier, preventing plasma penetration into the joint gap and avoiding abnormal glow discharge caused by plasma leakage, significantly reducing the arcing rate. This reduces the frequency and duration of unexpected downtime caused by arcing in the adhesive removal equipment, increases the effective operating time of the adhesive removal machine, and reduces maintenance costs. It also addresses the arcing phenomenon that occurs between the top cover and the partition during manufacturing.
[0027] To verify the reliability of the application using a 10 mm thick partition and sealing ring, this embodiment performs on-machine testing and VPD and particle tests.
[0028] pass Figure 3 The results of periodic VPD test data show that when using 4T baffles (partitions with a thickness of 4 mm), the random error of the degumming machine during the production process exceeds the control limit of product quality. After replacing the partitions with 10T baffles (partitions with a thickness of 10 mm) and adding a sealing ring between the partitions and the top cover, the test results improved significantly.
[0029] pass Figure 4 Routine monitoring of particle test data revealed that the stability of particle test results in the degumming reaction chamber was poor when using a 4T baffle (a partition with a thickness of 4 mm). Replacing the partition with a 10T baffle (a partition with a thickness of 10 mm) and adding a sealing ring between the partition and the top cover improved the stability of the test results, which helps reduce the risk of low product yield.
[0030] Conclusion: Using a 10 mm thick partition and adding a sealing ring between the partition and the top cover can effectively reduce abnormal glow discharge between the top cover and the partition, reduce the generation of arc discharge, improve the particle and metal element environment in the degumming reaction chamber, and increase product yield and machine uptime. Example 3
[0031] In another embodiment of the present invention, a degumming device is provided, the degumming device comprising the aforementioned plasma transition device for a degumming device.
Claims
1. A plasma transition device for a de-bonding apparatus, characterized by: The device is located between the plasma generation chamber and the degumming reaction chamber (2). The device includes a partition (4) located on the top of the degumming reaction chamber (2). A top cover (5) is fixedly installed on the upper side of the partition (4). A focusing adapter (6) is clamped between the top cover (5) and the partition (4). The bottom of the focusing adapter (6) contacts the top surface of the partition (4). The top of the focusing adapter (6) passes through the top cover (5) and is connected to the plasma generation chamber through a pipe. The partition (4) has multiple through holes (41) in the middle.
2. The plasma transition device for a de-gluing apparatus of claim 1, wherein: A sealing ring (7) is provided at the connection between the bottom of the focusing adapter (6) and the partition (4) to make the focusing adapter (6) and the partition (4) sealed together.
3. The plasma transition device for a de-gluing apparatus of claim 2, wherein: The sealing ring (7) is a Teflon ring, a sealing ring made of polytetrafluoroethylene material; it is set at the inner edge where the top cover (5) contacts the partition (4), and at the outer edge where the focusing adapter (6) contacts the partition (4).
4. The plasma transition device for a de-gluing apparatus of claim 1, wherein: The thickness of the middle part and the edge of the partition (4) is the same, and the thickness is greater than or equal to 8 mm.
5. The plasma transition device for a de-gluing apparatus of claim 1, wherein: The partition (4) has densely distributed through-hole sections at the position corresponding to the wafer in the degumming reaction chamber (2), and sparsely distributed through-hole sections are provided around the densely distributed through-hole sections; the density of through-holes in the densely distributed through-hole sections is greater than the density of through-holes in the sparsely distributed through-hole sections.
6. The plasma transition device for a de-gluing apparatus of claim 1, wherein: A sealing outer ring (3) is provided at the connection between the top of the focusing adapter (6) and the pipe.
7. A de-bonding apparatus, characterized by: The invention comprises a plasma transition device for a glue removal apparatus as described in any one of claims 1-6.