Wafer wet processing device with good temperature uniformity
By heating the gas and using a PID controller to adjust the gas temperature to match the liquid temperature, the temperature gradient problem in the wafer wet processing unit was solved, improving the uniformity of wafer processing and product yield.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- RUO MINGXIN EQUIP (SUZHOU) CO LTD
- Filing Date
- 2025-07-18
- Publication Date
- 2026-07-31
AI Technical Summary
Existing wafer wet processing equipment suffers from temperature gradients on wafers due to inconsistencies between chemical temperatures and room temperature, as well as Bernoulli chuck gas temperatures, which affect processing uniformity and product yield.
A gas heater is used to heat the gas introduced into the Bernoulli chuck, and the first temperature sensor feeds back to the PID controller to control the gas temperature to be consistent with the liquid temperature. The PID controller is used to adjust the gas heater to ensure the uniformity of the wafer surface temperature. The liquid temperature is monitored in real time in conjunction with the heat insulation pad and the second temperature sensor.
This achieves uniform temperature on the wafer surface, reduces chemical residue, and improves product yield.
Smart Images
Figure CN224583651U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of wafer cleaning technology, and in particular to a wafer wet processing device with good temperature uniformity. Background Technology
[0002] Wet wafer processing is a critical process in semiconductor manufacturing, referring to the techniques used to clean, etch, remove resists, or perform surface treatments on silicon wafers using liquid chemical reagents. Its core purpose is to remove contaminants, precisely pattern the wafer, or alter its surface properties to ensure the reliability of subsequent processes and device performance.
[0003] Currently, the method for wet processing of wafers is as follows: Wafer 2 is fixed on a rotary table 3 by a Bernoulli chuck 1. While wafer 2 is rotating, nozzle 4 sprays a chemical solution onto the wafer for etching and film deposition processes. At this time, if the temperature of the chemicals used in the process is different from the room temperature and the gas used in the Bernoulli chuck, a temperature gradient will appear on the wafer. This results in poor uniformity during wafer processing, chemical residues on the wafer after cleaning, and low product yield. Utility Model Content
[0004] The purpose of this invention is to overcome the shortcomings of the prior art by providing a wafer wet processing device with good temperature uniformity, resulting in good wafer temperature uniformity and high product yield.
[0005] To achieve the above objectives, the technical solution adopted by this utility model is: a wafer wet processing apparatus with good temperature uniformity, comprising:
[0006] Rotary table;
[0007] A Bernoulli chuck is disposed inside the rotary table to hold the wafer and rotate with the rotary table. The surface of the Bernoulli chuck is provided with vents, which are connected to the air intake channel inside the Bernoulli chuck.
[0008] A liquid tank, connected to a nozzle, is used to spray the liquid onto the surface of the wafer through the nozzle, and the liquid tank has a regulating component for adjusting the temperature of the liquid inside the liquid tank.
[0009] A gas heater is connected to an external gas supply device to deliver gas from the inlet channel to the gas hole through the outlet pipe.
[0010] A first temperature sensor is disposed on the rotating stage and located below the wafer to sense the temperature of the gas flowing out from the vent.
[0011] A PID controller is connected to the first temperature sensor and the gas heater respectively. It is used to receive temperature feedback from the first temperature sensor and control the gas heater to heat the gas to the same temperature as the medicine in the medicine tank.
[0012] Furthermore, heat insulation pads are provided on both sides of the air intake channel.
[0013] Furthermore, there are two first temperature sensors, which are respectively disposed on both sides of the rotary table.
[0014] Furthermore, the adjustment component is an adjustment knob.
[0015] Furthermore, a second temperature sensor is also provided inside the medicine tank. The second temperature sensor is connected to a thermometer, which is located between the medicine tank and the nozzle.
[0016] Due to the application of the above technical solution, this utility model has the following advantages compared with the prior art:
[0017] This invention relates to a wafer wet processing apparatus with good temperature uniformity. The gas connected to the Bernoulli chuck is heated by a gas heater, and the temperature is fed back to the PID controller by a first temperature sensor. The PID controller then controls the gas and the liquid solution used in the Bernoulli chuck to be at the same temperature, thereby suppressing the temperature gradient on the wafer, resulting in good temperature uniformity and high product yield. Attached Figure Description
[0018] The technical solution of this utility model will be further described below with reference to the accompanying drawings:
[0019] Figure 1 This is a schematic diagram of the structure of a wafer wet processing device in the prior art;
[0020] Figure 2 This is a schematic diagram of the structure of an embodiment of the present utility model;
[0021] The components are: 1. Bernoulli chuck; 2. Wafer; 3. Rotary stage; 4. Nozzle; 5. Gas heater; 6. Liquid tank; 7. First temperature sensor; 8. PID controller; 10. Air vent; 11. Air inlet channel; 12. Insulation pad; 20. Second temperature sensor; 21. Thermometer; 22. Adjustment component; 50. Air outlet pipe. Detailed Implementation
[0022] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort should fall within the scope of protection of the present application.
[0023] This invention provides a wafer wet processing device with good temperature uniformity, which solves the problem that existing wafer wet processing devices easily cause temperature trapezoids in wafers, resulting in chemical residues on the wafers after cleaning and low product yield.
[0024] For ease of understanding, the specific processes in the embodiments of this application are described below. Please refer to [link / reference]. Figure 2 This application provides a wafer wet processing apparatus with good temperature uniformity, comprising a rotary table 3, a Bernoulli chuck 1, a gas heater 5, a reagent tank 6, a nozzle 4, a first temperature sensor 7, and a PID controller 8. The Bernoulli chuck 1 is disposed inside the rotary table 3 to clamp the wafer 2 and rotate synchronously with the rotary table 3. The surface of the Bernoulli chuck 1 is provided with vents 10 for generating airflow, and the vents 10 communicate with the air intake channel 11 inside the Bernoulli chuck 1. Thus, external gas enters through the air intake channel 11 and flows out through the vents 10, forming a uniform airflow layer. When a high-speed airflow passes through the vents 10, the airflow velocity increases, and according to Bernoulli's principle, the static pressure in the gap region decreases significantly, while the atmospheric pressure of the surrounding environment remains unchanged. This pressure difference stably suspends the wafer 2 above the Bernoulli chuck 1 without direct contact.
[0025] The liquid tank 6 is connected to the nozzle 4. The liquid tank 6 sprays the liquid onto the surface of the wafer 2 through the nozzle 4. The liquid tank 6 has an adjustment component 22 for adjusting the temperature of the liquid inside the liquid tank. The temperature of the liquid inside the liquid tank 6 can be adjusted by the adjustment component 22 to adapt to the needs of different processes.
[0026] The gas heater 5 is connected to an external gas supply device to deliver gas from the air inlet channel 11 to the air hole 10 through the gas outlet pipe 50. In this embodiment, the gas heater 5 heats the gas in the gas supply device before sending it into the air inlet channel 11 and then it flows out from the air hole 10.
[0027] The first temperature sensor 7 is disposed on the rotary table 3 and located below the wafer 2, and is used to sense the temperature of the gas flowing out of the vent 10 and to feed back the real-time sensed gas temperature to the PID vent 8.
[0028] The PID controller 8 is connected to both the first temperature sensor 7 and the gas heater 5. During operation, the first temperature sensor 7 feeds back the sensed temperature to the PID controller 8, which then controls the gas heater 5 to heat the gas according to the set temperature, ensuring that the temperature of the gas is consistent with the temperature of the liquid in the medicine tank.
[0029] During operation, the temperature of the liquid in the liquid tank 6 is first set by adjusting component 22. The PID controller 8 controls the heating temperature of the gas heater 5 to be the same as the set temperature of the liquid. At this time, the external gas device is first turned on, and the gas device sends gas into the gas heater 5 for heating, and then sends it through the air inlet 11 to the air outlet 10 before flowing out. The first temperature sensor 7 feeds back the sensed temperature to the PID controller at any time. The PID controller 8 continuously controls the gas heater 5 to heat the external gas. When the temperature feedback sensed by the first temperature sensor 7 is the same as the set temperature in the liquid tank 6, the gas heater 5 maintains this heating temperature. Then, after the liquid tank 6 is automatically turned on, the liquid with the same temperature as the gas is sprayed onto the wafer 2 through the nozzle 4. In this way, there will be no temperature gradient on the wafer 2, the temperature uniformity on the wafer is good, and the residual liquid on the wafer can be effectively cleaned away, resulting in a high product yield.
[0030] Furthermore, in this embodiment, heat insulation pads 12 are provided on both sides of the air intake channel 11. This ensures that the heated gas will not lose temperature due to long-distance transmission after flowing into the air intake channel 11, and ensures that the temperature of the gas and the temperature of the liquid medicine are the same or close.
[0031] Furthermore, in this embodiment, there are two temperature sensors 7, which are respectively arranged on both sides of the rotating platform 3, so as to detect the gas temperature on both sides of the rotating platform 3 with high accuracy; of course, the number can also be adjusted according to actual needs.
[0032] Furthermore, in this embodiment, the adjustment component 22 is an adjustment knob. When it is necessary to adjust the temperature of the medicine solution, the temperature of the medicine solution can be easily adjusted by adjusting the knob, and then the same temperature setting can be performed by the PID controller 8.
[0033] In this embodiment, a second temperature sensor 20 is also provided in the medicine tank 6. The second temperature sensor 20 is connected to a thermometer 21. The thermometer 21 is located between the medicine tank 6 and the nozzle 4. This allows the temperature of the medicine to be known in real time through the thermometer 21, ensuring that the temperature of the medicine is the same as or close to the temperature of the gas.
[0034] This invention relates to a wafer wet processing device with good temperature uniformity. The gas connected to the Bernoulli chuck is heated by a gas heater, and the temperature is fed back to the PID controller by a first temperature sensor. The PID controller controls the gas temperature to be the same as the temperature of the liquid, so that the gas used in the Bernoulli chuck is at the same temperature as the liquid, resulting in good temperature uniformity of the wafer and high product yield.
[0035] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.
Claims
1. A wafer wet processing apparatus with good temperature uniformity, characterized in that, include: Rotary table (3); A Bernoulli chuck (1) is disposed inside the rotary table (3) to hold the wafer (2) and rotate with the rotary table (3). The surface of the Bernoulli chuck (1) is provided with vents (10), and the vents (10) are connected to the air intake channel (11) inside the Bernoulli chuck (1). The liquid tank (6) is connected to the nozzle (4) to spray the liquid onto the surface of the wafer (2) through the nozzle (4), and the liquid tank (6) has a regulating component (22) for regulating the temperature of the liquid inside the liquid tank (6); The gas heater (5) is connected to an external gas supply device to deliver gas from the inlet channel (11) to the gas hole (10) through the outlet pipe (50). A first temperature sensor (7) is disposed on the rotating stage (3) and located below the wafer (2) to sense the temperature of the gas flowing out from the vent (10); The PID controller (8) is connected to the first temperature sensor (7) and the gas heater (5) respectively, and is used to receive temperature feedback from the first temperature sensor (7) and control the gas heater (5) to heat the gas to the same temperature as the medicine liquid in the medicine tank (6).
2. The wafer wet processing apparatus with good temperature uniformity according to claim 1, wherein: The air intake channel (11) is provided with heat insulation pads (12) on both sides.
3. The wafer wet processing apparatus with good temperature uniformity according to Claim 1, wherein: There are two first temperature sensors (7), and the two first temperature sensors (7) are respectively arranged on both sides of the rotary table (3).
4. The wafer wet processing apparatus with good temperature uniformity according to Claim 1, wherein: The adjustment component (22) is an adjustment knob.
5. The wafer wet processing apparatus according to claim 1, wherein: The liquid tank (6) is also equipped with a second temperature sensor (20), which is connected to a thermometer (21); the thermometer (21) is located between the liquid tank (6) and the nozzle (4).