Semiconductor equipment

Abstract

This invention provides a semiconductor device. The exhaust port in the semiconductor device extends along the parallel direction of the reaction tank and the overflow tank, increasing the exhaust rate and preventing airflow from accumulating at the exhaust port and forming turbulence. Furthermore, a cover plate structure is added to the exhaust port. The cover plate structure shields at least part of the exhaust port, and multiple guide holes are provided on the bottom wall of the cover plate structure. These guide holes communicate with the exhaust port through a cavity within the cover plate structure. Therefore, the cover plate structure extends the airflow path, further preventing airflow from accumulating above the reaction tank and the overflow tank and forming turbulence. This optimizes the airflow uniformity within the reaction chamber, thereby reducing the occurrence of water stains on the wafer surface and improving device performance.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, and in particular to a semiconductor device. Background Technology

[0002] Wet etching and cleaning equipment is one of the key pieces of equipment in semiconductor manufacturing. It uses chemical solutions to etch and clean workpieces such as wafers. By precisely controlling the concentration, temperature, and reaction time of the chemical solution, it achieves selective removal of materials and removal of surface impurities. It also has etching patterning and cleaning functions, and is widely used in chip manufacturing, display panel and other fields to ensure device performance and yield.

[0003] Please see Figure 1 The existing wet etching and cleaning equipment has a reaction chamber 10 equipped with a reaction tank 101 and an overflow tank 102, used for wet etching of wafers and overflow cleaning of wafers, respectively. Since the etching solutions are generally acidic, alkaline, or organic solutions, they easily evaporate into the reaction chamber 10 and contaminate it. Therefore, to ensure a clean environment within the reaction chamber 10, the existing technology uses a purging method to maintain a certain gas replacement rate within the reaction chamber 10. Specifically, the existing wet etching and cleaning equipment has fan filter units (FFUs) 103 installed at the top of the reaction chamber 10, above the reaction tank 101 and the overflow tank 102, to provide filtered fresh air into the reaction chamber 10. Additionally, an exhaust port 104 is provided on the inner wall of the reaction chamber 10. The exhaust port 104 has multiple vent holes, allowing gas in the reaction chamber 10 to be discharged through each vent hole. The exhaust port 104 is in an open state and corresponds to the areas where the reaction tank 101 and the overflow tank 102 are located, allowing airflow above the reaction tank 101 and the overflow tank 102 to be discharged accordingly.

[0004] However, during the operation of the wet etching and cleaning equipment, after the wafer is immersed in the reaction tank 101, it is transferred to the overflow tank 102 by a robotic arm. During the transfer process, the wafer is exposed to the air in the reaction chamber 10 for a period of time, and the airflow velocity and stability have a direct impact on the wafer surface; for example, water stain defects may form on the wafer surface. Specifically, such as... Figure 2As shown, after being immersed in hydrofluoric acid, wafer W becomes hydrophobic, causing small droplets S to accumulate on its surface when removed from the etching acid tank 101. When wafer W is transported in air, oxygen in the air dissolves in the droplets S, oxidizing the surface of wafer W to form silicon oxide. This silicon oxide is dissolved by hydrofluoric acid within the droplets, flowing radially and depositing at the edges. After drying, the silicon oxide deposited on the surface of wafer W forms droplet-shaped marks, known as water marks. The formation of water marks is directly related to the residence time of the droplets S on the surface of wafer W. The longer the residence time of the droplets S, the easier it is to form water marks. The main factor affecting the residence time of the droplets S is the uniformity of the airflow distribution within the reaction chamber 10. Figure 1 and Figure 2 As can be seen, after the airflow enters the reaction chamber 10 through FFU103, it flows into the exhaust port 104 along the direction of the straight arrow. However, due to the open design and shape of the existing exhaust port 104, the airflow easily forms a turbulent or turbulent flow field within the reaction chamber 10, with high and uneven wind speeds. This prevents the airflow from effectively reaching the bottom of the reaction chamber 10, severely affecting the waste replacement rate. Furthermore, the uneven airflow lifts small droplets S, overcoming natural gravity and prolonging the time it takes for the droplets S to slide down, which can cause serious water staining problems.

[0005] Therefore, a new exhaust structure design is urgently needed to make the airflow field inside the cavity uniform and alleviate the water stain problem. Utility Model Content

[0006] The purpose of this invention is to provide a semiconductor device to solve at least one of the problems of how to improve the uniformity of airflow in the reaction chamber and how to reduce the occurrence rate of water stains on the wafer surface.

[0007] To solve the above-mentioned technical problems, this utility model provides a semiconductor device, including: a reaction chamber and a reaction tank and an overflow tank arranged side by side on the inner bottom wall of the reaction chamber; wherein,

[0008] The top wall of the reaction chamber is equipped with a fan filter unit for providing airflow into the reaction chamber;

[0009] The reaction chamber has an exhaust port on one side wall, and the exhaust port extends along the parallel direction of the reaction tank and the overflow tank;

[0010] A cover plate structure is provided on the inner surface of the side wall of the reaction chamber; the cover plate structure covers at least part of the exhaust port, and the cover plate structure has a cavity that is connected to the exhaust port; and the bottom wall of the cover plate structure has multiple guide holes so that the airflow in the reaction chamber enters the cavity through at least the multiple guide holes and flows out from the exhaust port.

[0011] Optionally, in the semiconductor device, the flow guide hole includes an elongated hole; each of the elongated holes extends along a direction perpendicular to the sidewall of the reaction chamber and is spaced apart and arranged side by side along a direction parallel to the sidewall of the reaction chamber.

[0012] Optionally, in the semiconductor device, the bottom wall of the cover plate structure extends linearly, and the distribution density of the flow guide holes in the central region of the bottom wall of the cover plate structure is less than the distribution density in the two side regions of the bottom wall of the cover plate structure.

[0013] Optionally, in the semiconductor device, the bottom wall of the cover structure extends linearly, and the extension length of each of the flow guide holes increases in the direction from the central region to the two side regions of the bottom wall of the cover structure.

[0014] Optionally, in the semiconductor device, an isolation plate is further provided within the reaction chamber, the isolation plate being located between the reaction tank and the overflow tank to separate the reaction tank and the overflow tank; wherein,

[0015] The top surface of the isolation plate is higher than the top surface of the reaction tank and the overflow tank; and the bottom wall of the cover plate structure is lower than the top surface of the isolation plate; the top wall of the cover plate structure is higher than the top surface of the isolation plate.

[0016] Optionally, in the semiconductor device, the exhaust port includes a first exhaust port and a second exhaust port; the first exhaust port and the second exhaust port are connected or close to each other, and correspond to the reaction tank and the overflow tank respectively, and are extended along the side of the reaction tank and the overflow tank.

[0017] Optionally, in the semiconductor device, the cover structure includes a first cover and a second cover; wherein, a first opening and a second opening are respectively provided on the sidewalls of the first cover and the second cover that are in contact with the inner surface of the sidewall of the reaction chamber; the first opening and the second opening are respectively adapted to the morphology of the first exhaust port and the second exhaust port, and are respectively connected to the first exhaust port and the second exhaust port; and,

[0018] Both the first cover and the second cover have the cavity, and the first exhaust port and the second exhaust port are respectively connected to the corresponding cavity through the first opening and the second opening.

[0019] Optionally, in the semiconductor device, the first cover and the second cover, projected onto the sidewall of the reaction chamber, both have an "L" shape and are symmetrically distributed; and,

[0020] The right-angled ends of the first cover and the second cover are close to each other, and one right-angled side of the first cover and the second cover are parallel or connected to each other. The extension lines of the other right-angled side of the first cover and the second cover coincide.

[0021] Optionally, in the semiconductor device, the bottom wall of the cover structure includes the bottom wall of the first cover and the bottom wall of the second cover; both the bottom walls of the first cover and the second cover are provided with multiple flow guide holes; wherein,

[0022] The distribution density of the plurality of flow guide holes in the first cover increases in a direction away from the second cover, and the distribution density of the plurality of flow guide holes in the second cover increases in a direction away from the first cover; and / or,

[0023] The flow guide hole is an elongated hole and extends in a direction perpendicular to the side wall of the reaction chamber; the extension length of the plurality of flow guide holes in the first cover increases in a direction away from the second cover, and the extension length of the plurality of flow guide holes in the second cover increases in a direction away from the first cover.

[0024] Optionally, in the semiconductor device, both the first exhaust port and the second exhaust port include at least an elongated hole, and the elongated hole extends along the parallel direction of the reaction tank and the overflow tank.

[0025] In summary, this utility model provides a semiconductor device. The exhaust port in the semiconductor device extends along the parallel direction of the reaction tank and the overflow tank, increasing the exhaust rate and preventing airflow from accumulating at the exhaust port and forming turbulence. Furthermore, a cover plate structure is added to the exhaust port. The cover plate structure shields at least part of the exhaust port, and multiple guide holes are provided on the bottom wall of the cover plate structure. These guide holes communicate with the exhaust port through a cavity within the cover plate structure. Therefore, under the shielding effect of the cover plate structure, the airflow path can be extended, further preventing airflow from accumulating above the reaction tank and the overflow tank and forming turbulence. This helps optimize the airflow uniformity within the reaction chamber, thereby reducing the occurrence rate of water stains on the wafer surface and improving device performance. Attached Figure Description

[0026] Those skilled in the art will understand that the accompanying drawings are provided to better understand the present invention and do not constitute any limitation on the scope of the present invention.

[0027] Figure 1 This is a schematic diagram of the exhaust port inside a wet etching machine in the prior art.

[0028] Figure 2 This is a schematic diagram of uneven airflow and small droplets in the reaction chamber in the prior art.

[0029] Figure 3 This is a schematic diagram of the structure inside the reaction chamber of the semiconductor device in an embodiment of this utility model.

[0030] Figure 4 This is a simulation diagram of the reaction chamber of the semiconductor device in an embodiment of this utility model.

[0031] Figure 5 This is a schematic diagram of the first exhaust port and the second exhaust port in an embodiment of this utility model.

[0032] Figure 6 This is a simulation diagram of the first cover and the second cover in the embodiment of this utility model.

[0033] Figure 7 This is a schematic diagram of uniform airflow on the wafer surface in an embodiment of this utility model.

[0034] Figure 8 This is a schematic projection of the first cover and the second cover in an embodiment of this utility model.

[0035] Figure 9 This is a schematic diagram of the guide holes inside the bottom walls of the first cover and the second cover in an embodiment of this utility model.

[0036] And, in the attached image:

[0037] 10-Reaction chamber; 101-Reaction tank; 102-Overflow tank; 103-Fan filter unit; 104-Exhaust port;

[0038] 20-Reaction chamber; 201-Reaction tank; 202-Overflow tank; 203-Fan filter unit; 204-Exhaust port; 2041-First exhaust port; 2042-Second exhaust port; 205-Cover structure; 2051-First cover; 2052-Second cover; 206-Isolation plate;

[0039] a-Round hole; b-Elongated hole; c-Guide hole;

[0040] W - wafer; S - droplet. Detailed Implementation

[0041] To make the objectives, advantages, and features of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, only used to facilitate and clearly illustrate the purpose of the embodiments of this utility model. Furthermore, the structures shown in the drawings are often part of the actual structure. In particular, different figures may have different focuses and sometimes use different scales. It should also be understood that, unless specifically stated or indicated, the terms "first," "second," "third," etc., in the specification are only used to distinguish the various components, elements, steps, etc., in the specification, and not to indicate the logical or sequential relationships between the various components, elements, steps, etc. Also, in this specification, the X-axis, Y-axis, and Z-axis are three mutually perpendicular directions in three-dimensional space.

[0042] Please see Figures 3 to 5 This embodiment provides a semiconductor device, including: a reaction chamber 20 and a reaction tank 201 and an overflow tank 202 arranged side-by-side on the inner bottom wall of the reaction chamber 20; wherein, a fan filter unit 203 is provided on the top wall of the reaction chamber 20 for providing airflow into the reaction chamber 20; a side wall of the reaction chamber 20 has an exhaust port 204, and the exhaust port 204 extends along the parallel direction of the reaction tank 201 and the overflow tank 202; a cover plate structure 205 is provided on the inner surface of the side wall of the reaction chamber 20; the cover plate structure 205 covers at least part of the exhaust port 204, and the cover plate structure 205 has a cavity, the cavity being connected to the exhaust port 204; and the bottom wall of the cover plate structure 205 has multiple guide holes c, so that the airflow in the reaction chamber 20 enters the cavity through at least the multiple guide holes c and flows out from the exhaust port 204.

[0043] Based on this, the semiconductor device provided in this embodiment not only changes the extension direction of the exhaust port 204 to increase the exhaust rate, but also adds the cover plate structure 205 to the exhaust port 204. The cover plate structure 205 shields at least part of the exhaust port 204, and multiple guide holes c are provided on the bottom wall of the cover plate structure 205. The guide holes c are connected to the exhaust port 204 through the cavity in the cover plate structure 205. Therefore, under the shielding of the cover plate structure 205, the path of the airflow can be extended, avoiding the airflow from converging above the reaction tank 201 and the overflow tank 202 to form turbulence, which is beneficial to optimizing the airflow uniformity in the reaction chamber 20, thereby reducing the occurrence rate of water stains on the wafer surface and improving device performance.

[0044] The semiconductor device provided in this embodiment will be described in detail below with reference to the accompanying drawings.

[0045] Please continue reading. Figure 3 and Figure 4 The semiconductor device provided in this embodiment includes, but is not limited to, a wet etching and cleaning device. The semiconductor device has a reaction chamber 20, and the reaction chamber 20 is provided with a reaction tank 201 and an overflow tank 202. The reaction tank 201 is used to perform corresponding semiconductor processes, such as wet etching. The overflow tank 202 is used to clean the wafer by overflow. The reaction tank 201 and the overflow tank 202 are arranged side-by-side along the X-axis on the inner bottom wall of the reaction chamber 20. Optionally, other components, such as exhaust pipes or liquid supply pipes, may be provided between the inner bottom wall of the reaction chamber 20 and the reaction tank 201 and the overflow tank 202. Furthermore, an isolation plate 206 is also provided in the reaction chamber 20, located between the reaction tank 201 and the overflow tank 202 to separate them. In the Z-axis direction, the top surface height of the isolation plate 206 is slightly greater than the top surface height of the reaction tank 201 and the overflow tank 202, so that the reaction tank 201 and the overflow tank 202 are spaced apart, while the space above the reaction tank 201 and the overflow tank 202 is connected to facilitate the transfer of wafers by the robotic arm.

[0046] To ensure a clean environment within the reaction chamber 20, a fan filter unit 203 is installed on the top wall of the reaction chamber 20, and an exhaust port 204 is installed on one side wall of the reaction chamber 20. The fan filter unit 203 supplies filtered fresh air into the reaction chamber 20 to purge the waste gas within it. The exhaust port 204 removes the purged waste gas, maintaining a certain waste gas replacement rate within the reaction chamber 20. Preferably, two fan filter units 203 are installed on the top wall of the reaction chamber 20, and these two fan filter units respectively purge the reaction tank 201 and the overflow tank 202, ensuring that the gas in the space above both is thoroughly purged.

[0047] Based on this, such as Figure 5 As shown, the exhaust port 204 is disposed on the sidewall opposite to the reaction tank 201 and the overflow tank 202, and extends along the parallel direction of the reaction tank 201 and the overflow tank 202. Preferably, the exhaust port 204 is divided into two parts along its extension direction: a first exhaust port 2041 and a second exhaust port 2042. The first exhaust port 2041 and the second exhaust port 2042 are arranged side by side in the X-axis direction and are close to or connected to each other. The first exhaust port 2041 corresponds to the reaction tank 201 to discharge at least the waste gas located in the space above the reaction tank 201. The second exhaust port 2042 corresponds to the overflow tank 202 to discharge at least the waste gas located in the space above the overflow tank 202. Preferably, the first exhaust port 2041 and the second exhaust port 2042 include not only a plurality of circular holes a arranged in an array, but also a plurality of elongated holes b. The elongated hole b extends along the X-axis, which helps to increase the speed of gas discharge and prevents waste gas from lingering at the exhaust port 204, forming turbulence and affecting the uniformity of airflow in the reaction chamber 20.

[0048] Please see Figures 3 to 6Since uneven airflow within the reaction chamber 20 exacerbates the occurrence of water stains on the wafer surface, the semiconductor device provided in this embodiment not only optimizes the shape of the exhaust port 204 to increase the exhaust gas discharge rate, but also provides a cover structure 205 at the corresponding position of the exhaust port 204 to adjust the airflow distribution within the reaction chamber 20 by utilizing the shielding effect of the cover structure 205. Specifically, the cover structure 205 is attached to the inner surface of the sidewall where the exhaust port 204 is located, and shields at least a portion of the exhaust port 204. Furthermore, the bottom wall height of the cover structure 205 is lower than the top surface height of the isolation plate 206; the top wall height of the cover structure 205 is higher than the top surface height of the isolation plate 206. Additionally, the cover structure 205 has a cavity, and multiple guide holes c are formed on the bottom wall of the cover structure 205. The guide holes c connect the reaction chamber 20 and the cavity within the cover structure 205. Furthermore, the cover plate structure 205 has an opening on its side wall relative to the exhaust port 204. The opening is adapted to the shape of the exhaust port 204 and is connected to the exhaust port 204, so that the airflow in the reaction chamber 20 flows out sequentially through the guide hole c, the cavity in the cover plate structure 205, the opening, and the exhaust port 204.

[0049] Based on this, comparison Figure 1 and Figure 3 It can be seen that, under the action of the cover structure 205, the airflow from the fan filter unit 203 cannot flow directly out of the exhaust port 204. Instead, it needs to bypass the outer wall of the cover structure 205, enter the bottom wall of the cover structure 205, and then flow out through the guide hole c on the bottom wall of the cover structure 205. This lengthens the outflow path of the airflow in the reaction chamber 20, and above the reaction tank 201 and the overflow tank 202, the airflow maintains a vertically downward flow direction, exhibiting better uniformity. Figure 7 As shown, when wafer W is removed from the reaction tank 201 to the overflow tank 202 by the robotic arm, wafer W is lifted above the reaction tank 201 and the overflow tank 202, away from the bottom wall of the cover structure 205. The airflow direction across the surface of wafer W is vertically downward and the flow rate is uniform. There will be no chaotic turbulence or disturbance. This allows small droplets to be quickly blown away from the surface of wafer W, preventing them from staying for a long time and thus reducing the occurrence of water stains.

[0050] To further improve the airflow uniformity within the reaction chamber 20, such as Figure 5 , Figure 6 and Figure 8As shown, the cover structure 205 can be composed of two parts: a first cover 2051 and a second cover 2052. The first cover 2051 is disposed corresponding to the first exhaust port 2041, and the second cover 2052 is disposed corresponding to the second exhaust port 2042. Specifically, the first cover 2051 has the cavity, and a first opening (not shown) is provided on the side wall of the first cover 2051 opposite to the first exhaust port 2041. The shape of the first opening is adapted to the shape of the first exhaust port 2041 for communication with the first exhaust port 2041. A plurality of guide holes c are provided on the bottom wall of the first cover 2051 so that the airflow in the reaction chamber 20 enters the cavity of the first cover 2051 through the guide holes c on the bottom wall of the first cover 2051, and then flows out through the first opening and the first exhaust port 2041. Similarly, the second cover 2052 also has the cavity, and a second opening (not shown) is provided on the side wall of the second cover 2052 opposite to the second exhaust port 2042. The shape of the second opening matches the shape of the second exhaust port 2042 for communication with the second exhaust port 2042. Furthermore, a plurality of guide holes c are provided on the bottom wall of the second cover 2052, so that the airflow in the reaction chamber 20 enters the cavity of the second cover 2052 through the guide holes c on the bottom wall of the second cover 2052, and then flows out through the second opening and the second exhaust port 2042.

[0051] Preferably, in the projection of the first cover 2051 and the second cover 2052 relative to the sidewall of the reaction chamber 20, the shapes of the first cover 2051 and the second cover 2052 both include an "L" shape and are symmetrically distributed. For example... Figure 8As shown, the projection of the second cover 2052 relative to the Z-X axis plane is "L" shaped. Furthermore, in this projection state, the shapes of the first cover 2051 and the second cover 2052 are mirror-symmetrical. Specifically, the right-angled ends of the first cover 2051 and the second cover 2052 are close to each other, one right-angled side of the first cover 2051 and the second cover 2052 is parallel or connected, and the extension lines of the other right-angled side of the first cover 2051 and the second cover 2052 coincide. It should be noted that the first cover 2051 and the second cover 2052 are also corresponding to the reaction tank 201 and the overflow tank 202, and the top structure of the isolation plate 206 can be inserted into the gap between the first cover 2051 and the second cover 2052. Furthermore, the extending directions of the first cover 2051 and the second cover 2052 are the same as the parallel directions of the reaction tank 201 and the overflow tank 202; that is, they extend along the X-axis direction to extend as far as possible to the sides of the reaction tank 201 and the overflow tank 202 that are far apart from each other, so that the airflow above the reaction tank 201 and the overflow tank 202 can be quickly drawn into the cavity and discharged using the guide hole c, avoiding these airflows from staying in the reaction chamber 20 for a long time and disturbing the uniform distribution of airflow.

[0052] It should be noted that because the first exhaust port 2041 and the second exhaust port 2042 are positioned close to each other on one side, the total area of ​​the exhaust holes in the areas where the first exhaust port 2041 and the second exhaust port 2042 are close to each other is larger, resulting in greater suction force on the airflow; while the area of ​​the exhaust holes in the areas where they are far apart is smaller, resulting in less suction force on the airflow. This leads to a situation where the central area of ​​the exhaust port 204 has a large suction force on the airflow, while the two outer areas have a small suction force on the airflow, which can easily cause different exhaust rates in different areas and affect the uniformity of airflow distribution within the reaction chamber 20. Therefore, in this embodiment, the size and distribution of the guide holes c are set to further ensure a uniform airflow distribution within the reaction chamber 20.

[0053] like Figure 6 and Figure 9As shown, the bottom wall of the cover structure 205 extends linearly along the X-axis. The distribution density of the guide holes c in the central region of the bottom wall of the cover structure 205 is less than the distribution density in the two side regions of the bottom wall of the cover structure 205. Compared with a uniform density distribution of the guide holes c, this embodiment provides a density distribution method that can reduce the airflow in the central region of the bottom wall of the cover structure 205 and increase the airflow in the central region of the bottom wall of the cover structure 205, thereby achieving a balanced exhaust flow in each region of the exhaust port 204. And / or, the extension length of each guide hole c increases gradually from the central region to the two side regions of the bottom wall of the cover structure 205. Specifically, as shown... Figure 9 As shown, the distribution density of the plurality of guide holes c in the first cover 2051 increases in the direction away from the second cover 2052, and the distribution density of the plurality of guide holes c in the second cover 2052 increases in the direction away from the first cover 2051. And / or, the extension length of the plurality of guide holes c in the first cover 2051 increases in the direction away from the second cover 2052, and the extension length of the plurality of guide holes c in the second cover 2052 increases in the direction away from the first cover 2051. In short, the number of guide holes c is reduced in areas with high airflow, and the number of guide holes c is increased in areas with low airflow to achieve airflow balance, avoid turbulence lifting small droplets, and thus prevent exacerbating water stains.

[0054] It should be further noted that the guide hole c is preferably an elongated hole, which ensures a large airflow and guides the airflow direction. For example, in this embodiment, the guide hole c extends in a direction perpendicular to the sidewall of the reaction chamber 20; that is, it extends along the Y-axis. Based on this, after the airflow bypasses the sidewalls of the first cover 2051 and the second cover 2052, it will be affected by the same extension direction of each guide hole c and will enter the cavity of the cover structure 205 quickly in the same direction, avoiding the problem of disordered entry into the cavity and further preventing the formation of turbulence.

[0055] Furthermore, to verify the mitigation effect of the cover structure 205 and the morphological design of the exhaust port 204 on the water stain problem, the applicant conducted three comparative testing experiments as shown in Table 1. According to Table 1, the semiconductor device provided in this embodiment can effectively reduce the occurrence rate of water stains.

[0056] Table 1 Wafer Water Stain Detection Data

[0057] Existing wet etching equipment 18 pcs 16 17 This embodiment features a semiconductor device. 2 3 2

[0058] In summary, the exhaust port 204 in the semiconductor device provided in this embodiment extends along the parallel direction of the reaction tank 201 and the overflow tank 202, and utilizes the elongated hole shape to increase the exhaust rate and prevent airflow from accumulating at the exhaust port 204 and forming turbulence. Furthermore, a cover plate structure 205 is added to the exhaust port 204. The cover plate structure 205 shields at least a portion of the exhaust port 204, and multiple guide holes c are provided on the bottom wall of the cover plate structure 205. The guide holes c communicate with the exhaust port 204 through the cavity within the cover plate structure 205. Therefore, under the shielding effect of the cover plate structure 205, the airflow path can be extended, further preventing airflow from accumulating above the reaction tank 201 and the overflow tank 202 and forming turbulence, which helps optimize the airflow uniformity within the reaction chamber 20, thereby reducing the water stain incidence on the wafer surface and improving device performance.

[0059] Furthermore, it should be understood that although the present invention has been disclosed above with reference to preferred embodiments, these embodiments are not intended to limit the present invention. For any person skilled in the art, many possible variations and modifications can be made to the present invention's technical solutions using the disclosed technical content, or equivalent embodiments can be modified accordingly, without departing from the scope of the present invention's technical solutions. Therefore, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present invention, without departing from the content of the present invention's technical solutions, shall still fall within the protection scope of the present invention's technical solutions.

Claims

1. A semiconductor device, characterized in that, include: A reaction chamber and a reaction tank and an overflow tank arranged side-by-side on the inner bottom wall of the reaction chamber; wherein, The top wall of the reaction chamber is equipped with a fan filter unit for providing airflow into the reaction chamber; The reaction chamber has an exhaust port on one side wall, and the exhaust port extends along the parallel direction of the reaction tank and the overflow tank; A cover plate structure is provided on the inner surface of the side wall of the reaction chamber; the cover plate structure covers at least part of the exhaust port, and the cover plate structure has a cavity that is connected to the exhaust port; and the bottom wall of the cover plate structure has multiple guide holes so that the airflow in the reaction chamber enters the cavity through at least the multiple guide holes and flows out from the exhaust port.

2. The semiconductor device according to claim 1, characterized in that, The flow guide hole includes an elongated hole; each of the elongated holes extends along a direction perpendicular to the sidewall of the reaction chamber and is spaced apart and arranged side by side along a direction parallel to the sidewall of the reaction chamber.

3. The semiconductor device according to claim 2, characterized in that, The bottom wall of the cover plate structure extends linearly, and the distribution density of the guide holes in the central region of the bottom wall of the cover plate structure is less than the distribution density in the two side regions of the bottom wall of the cover plate structure.

4. The semiconductor device according to claim 2 or 3, characterized in that, The bottom wall of the cover plate structure extends linearly, and the extension length of each of the guide holes increases from the central region to the two side regions of the bottom wall of the cover plate structure.

5. The semiconductor device according to claim 1, characterized in that, The reaction chamber is further equipped with a partition plate, which is located between the reaction tank and the overflow tank to separate the reaction tank and the overflow tank; wherein, The top surface of the isolation plate is higher than the top surface of the reaction tank and the overflow tank; and the bottom wall of the cover plate structure is lower than the top surface of the isolation plate; the top wall of the cover plate structure is higher than the top surface of the isolation plate.

6. The semiconductor device according to claim 1, characterized in that, The exhaust port includes a first exhaust port and a second exhaust port; the first exhaust port and the second exhaust port are connected or close to each other, and correspond to the reaction tank and the overflow tank respectively, and are extended along the side of the reaction tank and the overflow tank.

7. The semiconductor device according to claim 6, characterized in that, The cover structure includes a first cover and a second cover; wherein, a first opening and a second opening are respectively provided on the sidewalls of the first cover and the second cover that are in contact with the inner surface of the sidewall of the reaction chamber; the first opening and the second opening are respectively adapted to the shapes of the first exhaust port and the second exhaust port, and are respectively connected to the first exhaust port and the second exhaust port; and, Both the first cover and the second cover have the cavity, and the first exhaust port and the second exhaust port are respectively connected to the corresponding cavity through the first opening and the second opening.

8. The semiconductor device according to claim 7, characterized in that, On the projections of the first cover and the second cover relative to the sidewall of the reaction chamber, the shapes of both the first cover and the second cover include an "L" shape and are symmetrically distributed; and, The right-angled ends of the first cover and the second cover are close to each other, and one right-angled side of the first cover and the second cover are parallel or connected to each other. The extension lines of the other right-angled side of the first cover and the second cover coincide.

9. The semiconductor device according to claim 8, characterized in that, The bottom wall of the cover structure includes the bottom wall of the first cover and the bottom wall of the second cover; both the bottom walls of the first cover and the second cover are provided with multiple flow guide holes; wherein... The distribution density of the plurality of flow guide holes in the first cover increases in a direction away from the second cover, and the distribution density of the plurality of flow guide holes in the second cover increases in a direction away from the first cover; and / or, The flow guide hole is an elongated hole and extends in a direction perpendicular to the side wall of the reaction chamber; the extension length of the plurality of flow guide holes in the first cover increases in a direction away from the second cover, and the extension length of the plurality of flow guide holes in the second cover increases in a direction away from the first cover.

10. The semiconductor device according to claim 6, characterized in that, Both the first exhaust port and the second exhaust port include at least an elongated hole, and the elongated hole extends along the parallel direction of the reaction tank and the overflow tank.

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