A gas homogenizing device for dry etching process and semiconductor etching equipment
By employing a multi-stage tree-like gas channel structure in the dry etching process, the problem of uneven gas mixing during etching was solved, the yield of the etching process was improved, and the accumulation of by-products was reduced, resulting in a more uniform etching effect.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- 中锃半导体(深圳)有限公司
- Filing Date
- 2025-09-08
- Publication Date
- 2026-07-31
AI Technical Summary
Existing gas distribution devices suffer from uneven gas mixing during dry etching, resulting in poor etching uniformity and byproduct accumulation, which affects the etching process yield.
The dry etching process gas equalization device adopts a multi-level tree-like gas channel structure. The gas equalization channel is formed by the inlet flange, the intermediate gas equalization flange and the end gas equalization flange, which are staggered and tortuous. This ensures that the etching gas enters evenly from multiple subdivided gas inlets and mixes in the gas equalization channel to form a more uniform gas distribution.
It improves the yield of the etching process, reduces the accumulation of by-products during the etching process, and enhances etching uniformity and gas mixing effect.
Smart Images
Figure CN224583662U_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the technical field of semiconductor processing, specifically to a gas equalization device for dry etching process and semiconductor etching equipment. Background Technology
[0002] Etching is a process that selectively removes unwanted material from the surface of a silicon wafer or sapphire substrate using chemical or physical methods. As the integration density of semiconductor devices increases and linewidths shrink, controlling critical dimensions becomes increasingly important, placing higher demands on etching processes. Dry etching, as a crucial step in semiconductor manufacturing, directly impacts device performance and yield due to its precision.
[0003] In dry etching, semiconductor etching equipment typically uses an inlet device to introduce two process gases into the reaction chamber to etch the wafer. The uniform distribution and thorough mixing of the process gases are crucial to the etching rate, selectivity, and uniformity.
[0004] Existing gas distribution devices have the following technical problems in terms of gas uniformity: Uneven gas mixing affects the etching uniformity of the wafer.
[0005] The air intake device uses a single-pipe inlet and single-pipe outlet structure. This structure results in uneven mixing of the etching gases. Although this air intake structure can reduce costs, it has poor gas uniformity. In the etching reaction chamber, the gas pressure and flow rate decrease with distance from the air intake, leading to uneven gas distribution and easy accumulation of byproducts. Summary of the Invention
[0006] To address the aforementioned problems, the purpose of this invention is to provide a gas homogenizing device and semiconductor etching equipment for dry etching processes, solving the technical problems of uneven etching gas mixing, low etching yield, and the accumulation of by-products caused by this unevenness. The details are described below.
[0007] In a first aspect, this utility model relates to a gas equalization device for a dry etching process, comprising: An intake flange includes an intake passage, the intake passage including an intake port and a branch passage connected to the intake port and having at least one level of tree-like passage, the branch passage being evenly divided into multiple subdivided intake ports from the other side of the intake flange. Intermediate gas equalization flange, including intermediate gas equalization channel; and End gas equalization flange, including end gas equalization channel; The intake duct, intermediate gas equalization channel, and terminal gas equalization channel constitute a staggered and tortuous gas equalization channel; multiple subdivided intake ports are connected to the corresponding intermediate gas equalization channels; the etching mixed gas enters from the intake port, passes through the branch gas path into the intermediate gas equalization channel, and is uniformly output from the connected terminal gas equalization channel.
[0008] The intake flange includes a flange seat and a flow guide. The intermediate air distribution flange includes a first body, in which a first inner annular chamber and a first outer annular chamber are formed. The end air distribution flange includes a second body, in which a second inner annular chamber and a second outer annular chamber are formed.
[0009] In one embodiment, at least one gas equalization channel includes a first gas equalization channel and a second gas equalization channel, and the air inlet flange includes a first air inlet and a second air inlet. The first air inlet is connected to a first inner ring chamber through a first branch air passage having at least one level of tree-like air passage, and the second air inlet is connected to a first outer ring chamber through a second branch air passage having at least one level of tree-like air passage.
[0010] In one embodiment, the first branch air passage includes a primary tree-shaped air passage and two subdivided air inlets are arranged on the other side of the intake flange; the second branch air passage includes a tertiary tree-shaped air passage, including a first tree-shaped air passage, a second tree-shaped air passage and a third tree-shaped air passage, and eight subdivided air inlets are evenly arranged in a circumferential direction on the other side of the intake flange.
[0011] The first branch air path has two subdivided air inlets on the guide section and connects to the first inner ring chamber, and the second branch air path has eight subdivided air inlets on the guide section and connects to the first outer ring chamber.
[0012] In one embodiment, the intermediate gas equalization flange has a plurality of intermediate gas equalization holes that connect to the end gas equalization channels; the end gas equalization flange has a plurality of end gas equalization holes.
[0013] In one embodiment, the subdivided air inlet of the air inlet flange is misaligned with the intermediate air distribution hole of the intermediate air distribution flange, and the intermediate air distribution hole of the intermediate air distribution flange is misaligned with the end air distribution hole of the end air distribution flange, thereby forming one or more misaligned and tortuous air distribution channels.
[0014] In one embodiment, the intermediate gas equalization flange has a plurality of first intermediate gas equalization holes in the first inner ring chamber near the central axis, and a plurality of second intermediate gas equalization holes in the first outer ring chamber near the central axis; the end gas equalization flange has a plurality of first end gas equalization holes in the second inner ring chamber away from the central axis, and a plurality of second end gas equalization holes in the second outer ring chamber away from the central axis.
[0015] In addition, the flange seat includes a flange edge for fixed connection with the air intake device, and the first air intake and the second air intake are connected to the air passage of the air intake device.
[0016] Secondly, this utility model relates to a semiconductor etching apparatus, including a reaction chamber, a support base, and an air inlet device. The reaction chamber is mounted on the support base. It also includes a gas equalization device as described in the first aspect. The gas equalization device is connected to the air passage of the air inlet device and communicates with the reaction chamber, and is used to fully mix the etching mixed gas of the air inlet device and then inject it into the reaction chamber.
[0017] Compared with the prior art, the present invention has the following beneficial effects: The present invention relates to a gas equalization device for dry etching process and a semiconductor etching equipment. The gas inlet flange adopts a multi-stage tree-shaped gas channel structure, which can more evenly distribute the etching gas from the inlet into the gas equalization channel through several finely divided inlet ports. The gas is then further evenly distributed through the staggered and tortuous gas equalization channels in the middle and end gas equalization flanges, making the etching gas more uniformly mixed, improving the etching process yield and reducing the accumulation of by-products. Attached Figure Description
[0018] Figure 1 This is a three-dimensional structural diagram of a gas equalization device according to one embodiment; Figure 2 A comparative exploded view of the front and back of an embodiment of a gas equalization device; Figure 3 This is a perspective view of the internal air passage structure of the air inlet flange of an air distribution device according to one embodiment. Figure 4 This is a partial structural diagram of the internal air passage of an intake flange according to one embodiment; Figure 5 This is a cross-sectional view of the air distribution device according to one embodiment, along the center line of the two air inlets. Figure 6 This is a schematic diagram of the misaligned structure of the gas equalization channel in one embodiment of the gas equalization device. Figure 7 This is a schematic diagram of a semiconductor etching device according to one embodiment.
[0019] Figure label: Inlet flange 1; flange seat 11; flow guide 12; flange edge 13; first air inlet 15; second air inlet 16; first branch air passage 2; subdivided air inlets 21, 22; first tree-shaped air passage 3; second tree-shaped air passage 3; third tree-shaped air passage 311; intermediate air equalization flange 5; first body 50; first inner ring chamber 52; first intermediate air equalization hole 521; first outer ring chamber 56; second intermediate air equalization hole 561; end air equalization flange 8; second body 80; second inner ring chamber 82; first end air equalization hole 821; second outer ring chamber 86; second end air equalization hole 861; support seat 90; reaction chamber 92; air intake device 93; air intake passage P1; intermediate air equalization channel P2; end air equalization channel P3; center distance d1-d6. Detailed Implementation
[0020] The present invention will now be described in further detail with reference to specific embodiments and accompanying drawings. Similar elements in different embodiments are referred to by associated similar element reference numerals. In the following embodiments, many details are described to facilitate a better understanding of this application. However, those skilled in the art will readily recognize that some features may be omitted in different situations, or may be replaced by other elements, materials, or methods. In some cases, certain operations related to this application are not shown or described in the specification. This is to avoid obscuring the core parts of this application with excessive description. For those skilled in the art, detailed description of these related operations is not necessary; they can fully understand the related operations based on the description in the specification and general technical knowledge in the art.
[0021] Furthermore, the features, operations, or characteristics described in the specification can be combined in any suitable manner to form various embodiments. At the same time, the steps or actions in the method description can be rearranged or adjusted in a manner obvious to those skilled in the art. Therefore, the various orders in the specification and drawings are only for the clear description of a particular embodiment and do not imply a necessary order, unless otherwise stated that a particular order must be followed.
[0022] The serial numbers assigned to components in this document, such as "first" and "second," are used only to distinguish the described objects and have no sequential or technical meaning. The terms "connection" and "linkage" used in this application, unless otherwise specified, include both direct and indirect connections (linkages).
[0023] Please refer to Figure 1 The image shows a gas distribution device for the dry etching process in this embodiment, which is used in... Figure 7 The semiconductor etching equipment shown.
[0024] like Figure 7As shown, this semiconductor etching equipment is used in the dry etching process of wafers and includes a carrier 90, a reaction chamber 92, and an air intake device 93. The wafer 95 to be etched is placed in the reaction chamber 92. The reaction chamber 92 is mounted on the carrier 90. The air intake device 93 includes a gas equalization device for the dry etching process. This gas equalization device and the air intake device 93 are connected via a first air inlet 15 and a second air inlet 16. The gas equalization device is connected to the reaction chamber 92 and is used to thoroughly mix the etching mixed gas from the air intake device 93 before injecting it into the reaction chamber 92.
[0025] The specific structure of this gas equalization device is described below.
[0026] Please refer to Figure 1 , Figure 4 and Figure 5 The gas equalization device for the dry etching process is installed on the gas supply pipeline of the gas inlet device. It includes an inlet flange 1, an intermediate gas equalization flange 5, an end gas equalization flange 8, and at least one gas equalization channel assembled together. The gas equalization channel can be configured as one or more depending on the type of etching gas or the size of the inlet flange. Each gas equalization channel passes through the inlet flange 1, the intermediate gas equalization flange 5, and the end gas equalization flange 8.
[0027] In this embodiment, the intake flange 1 adopts a multi-stage tree-like gas channel structure, which allows the etching gas introduced through the intake port to be more evenly introduced into the gas equalization channel through several evenly divided subdivided intake ports, and further equalized in the staggered and tortuous gas equalization channel, making the etching gas mixture more uniform. Each gas equalization channel includes an intake gas channel P1 disposed in the intake flange 1, an intermediate gas equalization channel P2 disposed in the intermediate gas equalization flange 5, and an end gas equalization channel P3 disposed in the end gas equalization flange 8. The intake gas channel includes an intake port and a branch gas path with at least one stage of tree-like gas channel. The branch gas path evenly divides into multiple subdivided intake ports from the other side of the intake flange, such as intake port 16 and subdivided intake port 3112. The multiple subdivided intake ports are connected to and evenly distributed with the corresponding intermediate gas equalization channel. For example, the branch gas path 31 is connected to the first outer ring chamber 56 through the subdivided intake port 3112. The etching mixed gas enters from the intake port, is introduced into the intermediate gas equalization channel through the branch gas path, and is evenly output from the connected end gas equalization channel. The above is the overall structure; the detailed structure will be further described in the specific implementation section below.
[0028] The intake flange 1 includes a flange seat 11 and a flow guide 12. The flange seat 11 includes a flange edge 13 for fixed connection with the intake device.
[0029] The intermediate gas-uniforming flange 5 includes a first body 50, in which a first inner annular chamber 52 and a first outer annular chamber 56 are recessed on one side. The first inner annular chamber 52 and the first outer annular chamber 56 are annular and concentric in their central axes. To ensure sufficient gas uniformity, the first inner annular chamber 52 and the first outer annular chamber 56 have a groove structure that does not penetrate the first body 50, forming a bottom wall for gas uniformity.
[0030] The end gas equalization flange 8 includes a second body 80, which has a recessed side forming a second inner annular chamber 82 and a second outer annular chamber 86. The second inner annular chamber 82 and the second outer annular chamber 86 are annular and concentric in their central axes.
[0031] The bottom wall of the first inner ring chamber 52 has several first central air-regulating holes 521 arranged in a ring and connected to the second inner ring chamber 82. The bottom wall of the first outer ring chamber 56 has several second central air-regulating holes 561 arranged in a ring and connected to the second outer ring chamber 86.
[0032] The bottom wall of the second inner annular chamber 82 of the end gas equalization flange 8 has several annular first end gas equalization holes 821. The bottom wall of the second outer annular chamber 86 has several annular second end gas equalization holes 861.
[0033] exist Figure 2 In the specific embodiment shown, at least one gas equalization channel includes a first gas equalization channel and a second gas equalization channel. The first gas equalization channel is formed based on the first inner ring chamber 52 and the second inner ring chamber 82. The second gas equalization channel is formed based on the first outer ring chamber 56 and the second outer ring chamber 86. The air inlet flange 1 has a first air inlet 15 and a second air inlet 16 protruding from one side of the flange seat 11. The first air inlet 15 is connected to the first inner ring chamber 52 through a first branch air passage 2, and the second air inlet 16 is connected to the first outer ring chamber 56 through a second branch air passage. The first air inlet 15 and the second air inlet 16 are connected to the air passage of the air intake device 93.
[0034] Please refer to Figure 3In this embodiment, the first branch air passage 2 includes a Y-shaped primary tree-like air passage. The end of the air passage is curved to maintain the shape of the corresponding annular first inner ring chamber 52 to ensure unobstructed airflow. Two subdivided air inlets, such as subdivided air inlets 21 and 22, are arranged on the other side of the air inlet flange 1. The second branch air passage includes a tertiary tree-like air passage, specifically including a first tree-like air passage 3, a second tree-like air passage 31, and a third tree-like air passage 311. The first tree-like air passage 3 is divided into two air passages 31 and 32. The second tree-like air passage 31 forms four branch points 311, 312, 321, and 322 based on the first tree-like air passage 3. The third tree-like air passage 311 forms eight subdivided air inlets evenly arranged in the first outer ring chamber 56, such as subdivided air inlets 3111-3112 and subdivided air inlets 3211 and 3224.
[0035] The two most subtle air inlets at the very end of the first branch air passage 2 are located in the middle of the guide section 12 and are connected to the first inner annular chamber 52 of the intermediate gas equalization flange 5. The eight most subtle air inlets at the very end of the second branch air passage 3 are located at the outer edge of the guide section and are connected to the first outer annular chamber 56.
[0036] Please refer to Figure 4 as well as Figure 6 To construct a staggered and tortuous air distribution channel, the subdivided air inlets of the inlet flange 1 are designed to be staggered from the central air distribution orifice of the intermediate air distribution flange 5, for example... Figure 4 As shown, the subdivided air inlet 3112 and the second intermediate air distribution hole 561 have a staggered design, that is, there is a staggered spacing value between the center distance d4 and the center distance d5.
[0037] The intermediate air distribution orifice of the intermediate air distribution flange 5 is designed to be misaligned with the end air distribution orifice of the end air distribution flange 8, for example... Figure 4 As shown, there is a staggered design between the second intermediate air-distributing hole 561 and the second terminal air-distributing hole 861; that is, there is a staggered spacing between the center distance d5 and the center distance d6. This creates one or more staggered and tortuous air-distributing channels overall. For example... Figure 6 As shown, the etching gas enters through staggered and tortuous paths B and C of the annular first uniform gas channel, and enters through staggered and tortuous paths A and E of the annular second uniform gas channel, thereby further mixing the gas evenly dispersed in the inlet flange 1.
[0038] The misalignment method is not limited to Figure 4 For the structure, please refer to... Figure 2 as well as Figure 5In the illustrated embodiment, the intermediate gas equalization flange 5 has a plurality of first intermediate gas equalization holes 521 in the first inner ring chamber 52 near the central axis X, and a plurality of second intermediate gas equalization holes 561 in the first outer ring chamber 56 near the central axis X; the end gas equalization flange 8 has a plurality of first end gas equalization holes 821 in the second inner ring chamber 82 away from the central axis X, and a plurality of second end gas equalization holes 861 in the second outer ring chamber 86 away from the central axis X, thereby forming a staggered and tortuous first gas equalization channel and second gas equalization channel as a whole.
[0039] The above-described embodiments are only used to illustrate the technical solutions of this utility model, and are not intended to limit it. Although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this utility model.
Claims
1. A gas equalization device for a dry etching process, characterized in that, include: An intake flange includes an intake passage, the intake passage including an intake port and a branch passage connected to the intake port and having at least one level of tree-like passage, the branch passage evenly dividing into multiple subdivided intake ports from the other side of the intake flange. Intermediate gas equalization flange, including intermediate gas equalization channel; as well as End gas equalization flange, including end gas equalization channel; The air intake duct, the intermediate gas equalization channel, and the terminal gas equalization channel constitute at least one staggered and tortuous gas equalization channel; the plurality of subdivided air intakes are connected to the corresponding intermediate gas equalization channels; the etching mixed gas enters from the air intake, passes through the branch gas path into the intermediate gas equalization channel, and is uniformly output from the connected terminal gas equalization channel.
2. The gas distribution device for dry etching process as described in claim 1, characterized in that, The intake flange includes a flange seat and a flow guide. The intermediate air distribution flange includes a first body, in which a first inner annular chamber and a first outer annular chamber are formed. The end air distribution flange includes a second body, in which a second inner annular chamber and a second outer annular chamber are formed.
3. The gas equalization device for dry etching process as described in claim 2, characterized in that, The at least one gas equalization channel includes a first gas equalization channel and a second gas equalization channel. The air inlet flange includes a first air inlet and a second air inlet. The first air inlet is connected to the first inner ring chamber through a first branch air passage with at least one level of tree-like air passage. The second air inlet is connected to the first outer ring chamber through a second branch air passage with at least one level of tree-like air passage.
4. The gas equalization device for dry etching process as described in claim 3, characterized in that, The first branch air path includes a primary tree-shaped air passage and two subdivided air inlets are arranged on the other side of the intake flange; the second branch air path includes a tertiary tree-shaped air passage, including a first tree-shaped air passage, a second tree-shaped air passage and a third tree-shaped air passage, and eight subdivided air inlets are evenly arranged in a circumferential direction on the other side of the intake flange.
5. The gas equalization device for dry etching process as described in claim 4, characterized in that, The first branch air path has two subdivided air inlets on the guide section and connects to the first inner ring chamber, and the second branch air path has eight subdivided air inlets on the guide section and connects to the first outer ring chamber.
6. The gas equalization device for dry etching process as described in claim 2, characterized in that... The intermediate gas equalization flange has several intermediate gas equalization holes that connect to the end gas equalization channel; the end gas equalization flange has several end gas equalization holes.
7. The gas equalization device for dry etching process as described in claim 6, characterized in that, The subdivided air inlet of the air inlet flange is staggered with the middle air distribution hole of the intermediate air distribution flange, and the middle air distribution hole of the intermediate air distribution flange is staggered with the end air distribution hole of the end air distribution flange, thereby forming one or more staggered and tortuous air distribution channels.
8. The gas equalization device for dry etching process as described in claim 7, characterized in that, The intermediate gas equalization flange has a plurality of first intermediate gas equalization holes in the first inner ring chamber near the central axis, and a plurality of second intermediate gas equalization holes in the first outer ring chamber near the central axis; the terminal gas equalization flange has a plurality of first terminal gas equalization holes in the second inner ring chamber away from the central axis, and a plurality of second terminal gas equalization holes in the second outer ring chamber away from the central axis.
9. The gas equalization device for dry etching process as described in claim 3, characterized in that, The flange seat includes a flange edge for fixed connection with the air intake device, and the first air intake port and the second air intake port are connected to the air passage of the air intake device.
10. A semiconductor etching apparatus, comprising a reaction chamber, a support, and an air inlet device, wherein the reaction chamber is mounted on the support, characterized in that, It also includes a gas equalization device as described in any one of claims 1-9, wherein the gas equalization device is connected to the air passage of the air inlet device and communicates with the reaction chamber, and is used to fully mix the etching mixed gas of the air inlet device and then inject it into the reaction chamber.