Supercritical carbon dioxide cleaning system

Abstract

This application relates to the field of chip manufacturing technology and discloses a supercritical carbon dioxide cleaning system. The cleaning system includes a carbon dioxide storage device, a pressure control device, a cleaning device, and a carbon dioxide separation device. An ejector and a sample stage are arranged within the cleaning chamber of the cleaning device. The ejector is positioned to align with the sample stage. The carbon dioxide storage device, pressure control device, and ejector are sequentially connected to pressurize carbon dioxide to obtain supercritical carbon dioxide, which is then ejected onto the wafer to be cleaned on the sample stage. An opening in the cleaning chamber connects to the carbon dioxide separation device, which is connected to the carbon dioxide storage device. By controlling and transporting the supercritical state of the carbon dioxide, it enters the cleaning chamber to clean the wafer. The carbon dioxide is then separated through the opening of the cleaning chamber and the carbon dioxide separation device, forming a carbon dioxide circulation system for cleaning the wafer, ensuring that the supercritical carbon dioxide effectively cleans the wafer.

Description

Technical Field

[0001] This application relates to the field of chip manufacturing technology, and in particular to a supercritical carbon dioxide cleaning system. Background Technology

[0002] Cleaning is an essential step in the manufacturing of superconducting quantum chips during wafer fabrication, including chemical cleaning and plasma cleaning. With the continuous development of modern manufacturing technology, larger aspect ratio device structures are an inevitable trend. Wet cleaning typically uses expensive solutions composed of strong acids and alkalis, which often leads to environmental pollution. Conventional wet cleaning, also known as RCA cleaning, mainly includes DHF, SPM, SC1, SC2, and high-pressure pure water. RCA cleaning can effectively remove various impurities from the silicon wafer surface, such as organic matter, metal ions, and particles. However, high aspect ratio structures have small feature sizes. When the aspect ratio is greater than 5:1, the liquid used in wet cleaning has a large surface tension, making it difficult for the cleaning solution to penetrate to the bottom of the structure, resulting in incomplete cleaning and impurity residue. Furthermore, the drying process after conventional wet cleaning can easily cause structural deformation or even damage.

[0003] CO2 has a low critical temperature (31.1℃) and critical pressure (7.38MPa), and possesses dual properties of both liquid and gas. Supercritical carbon dioxide (SCCO2) has excellent solubility, capable of dissolving various contaminants. Furthermore, SCCO2's extremely low surface tension (close to 0 N / m) and viscosity allow it to penetrate complex structures at the micron and even nanometer scales, flushing contaminants out of deep pores without damaging the device structure. However, existing cleaning devices cannot meet the functional requirements of SCCO2 cleaning and cannot guarantee the effectiveness of the cleaning process.

[0004] Therefore, how to provide a structure suitable for SCCO2 cleaning to effectively clean wafers has become an urgent problem to be solved. Utility Model Content

[0005] This application provides a supercritical carbon dioxide cleaning system to address the problem of how to provide a structure suitable for SCCO2 cleaning in order to effectively clean wafers.

[0006] In a first aspect, this application provides a supercritical carbon dioxide cleaning system, comprising: a carbon dioxide storage device, a pressure control device, a cleaning device, and a carbon dioxide separation device, wherein the carbon dioxide storage device is used to store carbon dioxide;

[0007] The cleaning device includes a cleaning chamber, in which an ejector and a sample stage are provided. The ejector is positioned to be aligned with the sample stage, and the sample stage is used to hold the wafer to be cleaned.

[0008] The output port of the carbon dioxide storage device is connected to the input port of the pressure control device through a first transmission pipeline, and the output port of the pressure control device is connected to the input end of the injector through a second transmission pipeline. The pressure control device is used to pressurize the input carbon dioxide to obtain supercritical carbon dioxide and then transmit it to the injector. The injector is used to spray supercritical carbon dioxide onto the wafer to be cleaned on the sample stage.

[0009] The cleaning chamber has an opening that connects to the inlet of the carbon dioxide separator, and the outlet of the carbon dioxide separator connects to the inlet of the carbon dioxide storage device.

[0010] Optionally, the pressure control device includes: a plunger pump, a buffer tank, and a pressure control module;

[0011] The inlet of the plunger pump is connected to the outlet of the carbon dioxide storage device, the outlet of the plunger pump is connected to the buffer tank, and the buffer tank is connected to the input end of the injector through a transmission pipeline;

[0012] The pressure control module controls the plunger pump connected to it to pressurize the input carbon dioxide in stages to obtain supercritical carbon dioxide.

[0013] Optionally, a first heating module and a first temperature sensor are embedded in the wall of the cleaning chamber;

[0014] The supercritical carbon dioxide cleaning system further includes: a first heating control module, which is connected to the first heating module and the first temperature sensor to control the first heating module according to the temperature value of the cleaning chamber detected by the first temperature sensor.

[0015] Optionally, the cleaning chamber further includes a pressure sensor disposed within the cleaning chamber to detect the pressure within the cleaning chamber and, based on the pressure within the cleaning chamber, control the pressure control device to maintain the pressure within the cleaning chamber at the supercritical range for carbon dioxide.

[0016] Optionally, a control valve is provided at the opening, which is closed when the cleaning chamber begins cleaning and opened when the cleaning chamber ends cleaning.

[0017] Optionally, a second heating module and a second temperature sensor are installed on both the first and second transmission pipelines;

[0018] The supercritical carbon dioxide cleaning system further includes a second heating control module, which is connected to the second heating module and the second temperature sensor to control the second heating module based on the temperature values ​​of the first and second transmission pipelines detected by the second temperature sensor.

[0019] Optionally, the injector includes: a distributor and at least one nozzle;

[0020] The diverter includes a primary annular manifold and a secondary circular perforated diverter plate. The output end of the primary annular manifold is connected to the secondary circular perforated diverter plate, and the input end of the primary annular manifold is used to input liquid carbon dioxide. All nozzles are installed on the secondary circular perforated diverter plate.

[0021] Optionally, it may also include: a condensation device;

[0022] The output port of the carbon dioxide separator is connected to the input port of the condenser, and the output port of the condenser is connected to the input port of the carbon dioxide storage device. The condenser is used to convert gaseous carbon dioxide into liquid carbon dioxide.

[0023] Optionally, the carbon dioxide separation device includes: a filtration module, a rotary separation chamber, and a pollutant collection chamber;

[0024] The air inlet of the rotary separation chamber is connected to the opening, and the air outlet of the rotary separation chamber is connected to the input port of the carbon dioxide storage device.

[0025] The filter module is located at the air outlet of the rotary separation chamber, and the pollutant collection chamber is connected to the rotary separation chamber to collect the pollutants separated by the rotary separation chamber.

[0026] Optionally, the pollutant collection chamber is located below the rotating separation chamber, the air inlet of the rotating separation chamber is located on the side wall of the rotating separation chamber, and the air outlet of the rotating separation chamber is located above the rotating separation chamber.

[0027] The technical advantages achieved by this application compared to existing technologies are as follows: The cleaning system of this application includes a carbon dioxide storage device, a pressure control device, a cleaning device, and a carbon dioxide separation device. The cleaning device includes a cleaning chamber, in which an ejector and a sample stage are arranged. The ejector is positioned and aligned with the sample stage, which is used to hold the wafer to be cleaned. The output port of the carbon dioxide storage device is connected to the input port of the pressure control device through a first transmission pipeline, and the output port of the pressure control device is connected to the input end of the ejector through a second transmission pipeline. The pressure control device is used to pressurize the input carbon dioxide to obtain supercritical carbon dioxide and then transmit it to the ejector. The ejector is used to spray supercritical carbon dioxide onto the wafer to be cleaned on the sample stage. An opening is provided in the cleaning chamber, which is connected to the input port of the carbon dioxide separation device, and the output port of the carbon dioxide separation device is connected to the input port of the carbon dioxide storage device. By controlling and transmitting the supercritical state of carbon dioxide, it enters the cleaning chamber to clean the wafer, and is separated through the opening of the cleaning chamber and the carbon dioxide separation device, forming a carbon dioxide circulation system for cleaning the wafer, ensuring that supercritical carbon dioxide effectively cleans the wafer. Attached Figure Description

[0028] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments of this application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0029] Figure 1 This is a schematic diagram of the structure of a supercritical carbon dioxide cleaning system provided in Embodiment 1 of this application;

[0030] Figure 2 This is a schematic diagram of the structure of an injector provided in Embodiment 2 of this application;

[0031] Figure 3 This is a schematic diagram of the structure of a carbon dioxide separation device provided in Embodiment 3 of this application;

[0032] Among them, 1. Carbon dioxide storage device, 2. Pressure control device, 3. First transmission pipeline and second transmission pipeline, 4. Cleaning device, 5. First heating module, 6. Injector, 7. Sample stage, 8. Carbon dioxide separation device, 9. Condensation device, 61. Primary annular manifold, 62. Secondary circular perforated diverter plate, 63. Nozzle, 81. Filter module, 82. Rotary separation chamber, 83. Pollutant collection chamber. Detailed Implementation

[0033] To make the technical problems, technical solutions, and beneficial effects solved by this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0034] like Figure 1 The diagram shown is a structural schematic of a supercritical carbon dioxide cleaning system provided in Embodiment 1 of this application. The supercritical carbon dioxide cleaning system includes: a carbon dioxide storage device 1, a pressure control device 2, a cleaning device 4, and a carbon dioxide separation device 8. The carbon dioxide storage device is used to store carbon dioxide. Specifically, it can store liquid carbon dioxide to increase the amount of carbon dioxide stored. Of course, if the carbon dioxide storage device 1 is large, it can store gaseous carbon dioxide, which is not limited here.

[0035] The cleaning device 4 includes a cleaning chamber, in which an ejector 6 and a sample stage 7 are arranged. The ejector 6 is aligned with the sample stage 7, which is used to hold the wafer to be cleaned. The sample stage 7 can consist of a rotatable base and a support with adjustable height and angle, thereby achieving horizontal rotation and having a multi-degree-of-freedom adjustment (tilt) function.

[0036] The output port of the carbon dioxide storage device 1 is connected to the input port of the pressure control device 2 through the first transmission pipeline 3. The output port of the pressure control device 2 is connected to the input end of the ejector 6 through the second transmission pipeline 3. The pressure control device 2 is used to pressurize the input carbon dioxide to obtain supercritical carbon dioxide and then transmit it to the ejector 6. The ejector 6 is used to spray supercritical carbon dioxide onto the wafer to be cleaned on the sample stage 7.

[0037] The aforementioned cleaning chamber has an opening that connects to the inlet of the carbon dioxide separator 8, and the outlet of the carbon dioxide separator 8 connects to the inlet of the carbon dioxide storage device 1.

[0038] exist Figure 1 A condenser 9 is also provided, which is used to convert gaseous carbon dioxide into liquid carbon dioxide, which is beneficial for storage. However, for SCCO2 cleaning, the condenser 9 can be omitted. Similarly, the first heating module 5 is also a preferred solution; the function of cleaning wafers with SCCO2 can be achieved without the first heating module 5.

[0039] The operating procedure of this supercritical carbon dioxide cleaning system is as follows:

[0040] Taking liquid CO2 stored in carbon dioxide storage device 1 as an example, liquid CO2 is drawn from carbon dioxide storage device 1 and pressurized in pressure control device 2 to obtain SCCO2. Of course, SCCO2 can be mixed with other solvents according to different needs to achieve better cleaning effect. Dynamic SCCO2 is sprayed out through injector 6 to rinse the wafer for 5 minutes. The sample stage rotates to ensure anisotropic cleaning. The pressure in the cleaning chamber is maintained for 10 minutes to dissolve stubborn contaminants. Temperature and pressure are monitored in real time to ensure that CO2 is stable in the supercritical range. The strong penetration and dissolution effect of SCCO2 removes the residue from the wafer. After cleaning, the pressure is slowly reduced to convert SCCO2 into gaseous CO2, forming a high-speed airflow to flush the channel. The gas flows through the opening into carbon dioxide separation device 9, and then the CO2 is discharged to carbon dioxide storage device 1 through the exhaust port.

[0041] The cleaning system of this application embodiment includes a carbon dioxide storage device, a pressure control device, a cleaning device, and a carbon dioxide separation device. The cleaning device includes a cleaning chamber, in which an ejector and a sample stage are disposed. The ejector is positioned and aligned with the sample stage, and the sample stage is used to hold the wafer to be cleaned. The output port of the carbon dioxide storage device is connected to the input port of the pressure control device through a first transmission pipeline, and the output port of the pressure control device is connected to the input end of the ejector through a second transmission pipeline. The pressure control device is used to pressurize the input carbon dioxide to obtain supercritical carbon dioxide and then transmit it to the ejector. The ejector is used to spray supercritical carbon dioxide onto the wafer to be cleaned on the sample stage. An opening is provided on the cleaning chamber, and the opening is connected to the input port of the carbon dioxide separation device. The output port of the carbon dioxide separation device is connected to the input port of the carbon dioxide storage device. By controlling and transporting supercritical carbon dioxide, it is introduced into the cleaning chamber to clean the wafer. The carbon dioxide is then separated through the opening of the cleaning chamber and the carbon dioxide separation device, forming a carbon dioxide circulation cleaning system for the wafer. This ensures that supercritical carbon dioxide effectively cleans the wafer. The extremely low surface tension and viscosity of SCCO2, along with its excellent dissolving power, can clean structures with high aspect ratios (>10:1) without damaging the device structure.

[0042] In one embodiment, the pressure control device 2 includes: a plunger pump, a buffer tank, and a pressure control module;

[0043] The inlet of the plunger pump is connected to the outlet of the carbon dioxide storage device 1, the outlet of the plunger pump is connected to the buffer tank, and the buffer tank is connected to the input end of the injector through a transmission pipeline.

[0044] The pressure control module controls the plunger pump connected to it to pressurize the input carbon dioxide in stages to obtain supercritical carbon dioxide.

[0045] The plunger pump can pressurize the incoming carbon dioxide in stages to form SCCO2. Of course, at this time, it is also necessary to ensure that the temperature of the carbon dioxide entering the plunger pump is supercritical, for example, the supercritical temperature is 31.1℃, and the corresponding critical pressure is 7.38MPa. The SCCO2 formed by the plunger pump is buffered and stored in the buffer tank, and then enters the ejector 6.

[0046] The pressure control device 2 includes a pressure control module that can control the operation of the plunger pump to form SCCO2.

[0047] This embodiment uses a plunger pump and a buffer tank to accurately obtain SCCO2, thereby providing better cleaning prerequisites for subsequent spraying.

[0048] In one embodiment, a first heating module 5 and a first temperature sensor are embedded in the wall of the cleaning chamber;

[0049] The supercritical carbon dioxide cleaning system further includes: a first heating control module, which is connected to the first heating module 5 and the first temperature sensor to control the first heating module according to the temperature value of the cleaning chamber detected by the first temperature sensor.

[0050] The first heating module 5 is embedded in the wall of the cleaning chamber, specifically a heating belt, heating strip, etc. The first temperature sensor detects the temperature in the cleaning chamber. When the temperature does not reach the temperature corresponding to the supercritical range, the first heating control module controls the first heating module 5 to heat the cleaning chamber to reach the temperature corresponding to the supercritical range.

[0051] This embodiment improves the cleaning effect by controlling the temperature of the cleaning chamber to maintain the supercritical state of SCCO2 within the cleaning chamber.

[0052] In one embodiment, the cleaning chamber further includes a pressure sensor disposed within the cleaning chamber to detect the pressure within the cleaning chamber and, based on the pressure within the cleaning chamber, control the pressure control device 2 to maintain the pressure within the cleaning chamber at the supercritical range for carbon dioxide.

[0053] A pressure sensor is installed in the cleaning chamber. The pressure sensor detects the pressure in the cleaning chamber and feeds it back to the pressure control device 2, so that the pressure in the cleaning chamber is maintained at the pressure corresponding to the supercritical range, that is, the carbon dioxide is kept in the supercritical range.

[0054] This embodiment improves the cleaning effect by controlling the pressure in the cleaning chamber to maintain the supercritical state of SCCO2 within the cleaning chamber.

[0055] In one embodiment, a control valve is provided at the opening. The control valve is closed when the cleaning chamber begins cleaning and opened when the cleaning chamber ends cleaning.

[0056] A control valve is installed at the opening to close when cleaning begins in the cleaning chamber, ensuring the temperature and pressure within the cleaning chamber. After cleaning, the control valve is opened to slowly reduce the pressure in the cleaning chamber, causing SCCO2 to convert into gaseous CO2. This forms a high-speed airflow that washes through the channels on the wafer, removing contaminants.

[0057] In one embodiment, a second heating module and a second temperature sensor are respectively installed on the first transmission pipeline and the second transmission pipeline;

[0058] The supercritical carbon dioxide cleaning system further includes a second heating control module, which is connected to the second heating module and the second temperature sensor to control the second heating module based on the temperature values ​​of the first and second transmission pipelines detected by the second temperature sensor.

[0059] In this process, a heating element, namely a second heating module, is installed on the conveying pipeline. Specifically, it can be a heating jacket or the like. A second temperature sensor is used to detect the temperature inside the conveying pipeline, so that the second heating control module controls the second heating module according to the temperature detected by the second temperature sensor.

[0060] Specifically, a first transmission pipeline is located between the carbon dioxide storage device 1 and the pressure control device 2. The carbon dioxide is heated in this pipeline so that it reaches the supercritical temperature (i.e., above 31.1°C) when it reaches the pressure control device 2. A second transmission pipeline is located between the pressure control device 2 and the injector 6. The carbon dioxide is heated in this pipeline to ensure that it remains at the supercritical temperature during transmission.

[0061] This embodiment improves the cleaning effect by controlling the temperature during the transmission process to maintain the SCCO2 in a supercritical state within the cleaning chamber.

[0062] like Figure 1 As shown, the supercritical carbon dioxide cleaning system also includes a condensation device 9, the output port of the carbon dioxide separation device 8 is connected to the input port of the condensation device 9, the output port of the condensation device 9 is connected to the input port of the carbon dioxide storage device 1, and the condensation device 9 is used to convert gaseous carbon dioxide into liquid carbon dioxide.

[0063] Liquid carbon dioxide is advantageous for storage and use, improving the overall applicability of the system.

[0064] like Figure 2 The diagram shown is a schematic diagram of an injector provided in Embodiment 2 of this application. The injector 6 includes a diverter and at least one nozzle 63. The diverter includes a primary annular manifold 61 and a secondary circular orifice diverter plate 62. The output end of the primary annular manifold 61 is connected to the secondary circular orifice diverter plate 62. The input end of the primary annular manifold 61 is used to input carbon dioxide. All the nozzles 63 are installed on the secondary circular orifice diverter plate 62.

[0065] The distribution and number of nozzles 63 can be customized according to the position of the deep hole on the wafer. By using customized targeted nozzles, the micro-holes can be oriented and aligned to improve cleanliness.

[0066] The combination of the primary annular manifold 61 and the secondary circular orifice-shaped diverter plate 62 can improve the reception and pressurized injection of SCCO2, thereby increasing the injection pressure.

[0067] like Figure 3 The diagram shown is a structural schematic of a carbon dioxide separation device provided in Embodiment 3 of this application. The carbon dioxide separation device 8 includes: a filter module 81, a rotary separation chamber 82, and a pollutant collection chamber 83. The air inlet of the rotary separation chamber 82 is connected to the opening, and the air outlet of the rotary separation chamber 82 is connected to the input port of the carbon dioxide storage device 1. The filter module 81 is disposed at the air outlet of the rotary separation chamber 82, and the pollutant collection chamber 83 is disposed and connected to the rotary separation chamber 82 to collect the pollutants separated by the rotary separation chamber 82.

[0068] The rotating separation chamber 82 can rotate to separate the gas, liquid and other substances entering the rotating separation chamber 82 by centrifugal force, so that the denser particles are rotated and thrown against the chamber wall, and CO2 gas is discharged from the outlet.

[0069] In one embodiment, the pollutant collection chamber 83 is disposed below the rotating separation chamber 82, the air inlet of the rotating separation chamber 82 is disposed on the side wall of the rotating separation chamber 82, and the air outlet of the rotating separation chamber 82 is disposed above the rotating separation chamber 82.

[0070] The denser particles are rotated and thrown against the cavity wall, then flow along the cavity wall to the pollutant collection chamber 83 below before being discharged. The rotating airflow contracts towards the center and forms an upward vortex. CO2 is discharged from the outlet after passing through the filter module 81.

[0071] Combining all the above implementation methods, the usage process of this supercritical carbon dioxide cleaning system is as follows:

[0072] Taking liquid CO2 stored in a carbon dioxide storage device 1 as an example, it is initially transported from the storage device 1 using a high-pressure pump. Before reaching the plunger pump, the CO2 is heated to above 31.1°C and then pressurized in stages using the plunger pump to obtain SCCO2. Depending on the specific requirements, SCCO2 is mixed with other solvents to achieve better cleaning results. SCCO2 is sprayed through nozzle 63 to dynamically rinse the wafer for 5 minutes. The sample stage 7 rotates to ensure anisotropic cleaning. The outlet valve is closed, and the pressure is maintained for 10 minutes to dissolve stubborn contaminants. Temperature and pressure are monitored in real time to ensure stability within the supercritical range. The strong penetrating and dissolving properties of SCCO2 allow residues to detach from the wafer. After cleaning, the pressure is slowly reduced, causing the SCCO2 to convert into gaseous CO2, forming a high-speed airflow that flushes the channels. This can be combined with a negative suction function, where the suction direction is at a certain angle to the deep hole axis, creating a vortex that enhances the cleaning effect on the deep holes. The air enters the rotating separation chamber 82 through the inlet. The denser particles are thrown against the chamber wall by the centrifugal force generated by the rotation. They then flow along the chamber wall to the pollutant collection chamber 83 below and are discharged. The rotating airflow contracts towards the center and forms an upward vortex. CO2 is filtered and discharged from the exhaust port. The gaseous CO2 is processed by the condenser 9 and returned to the carbon dioxide storage device 1 for reuse, without causing pollution to the environment.

[0073] In one embodiment, a combination of SCCO2 and a co-solvent is used to specifically clean contaminants remaining in deep pores. During the actual cleaning process, the chamber temperature can be between 35-50°C, and the pressure can be adjusted according to the solubility of the contaminants, typically set to 10-20 MPa. This is higher than the critical temperature and critical pressure of SCCO2, thus ensuring the cleaning effect of SCCO2.

[0074] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.

Claims

1. A supercritical carbon dioxide cleaning system, characterized in that, include: A carbon dioxide storage device, a pressure control device, a cleaning device, and a carbon dioxide separation device, wherein the carbon dioxide storage device is used to store carbon dioxide; The cleaning device includes a cleaning chamber, in which an ejector and a sample stage are provided. The ejector is positioned to be aligned with the sample stage, and the sample stage is used to hold the wafer to be cleaned. The output port of the carbon dioxide storage device is connected to the input port of the pressure control device through a first transmission pipeline, and the output port of the pressure control device is connected to the input end of the injector through a second transmission pipeline. The pressure control device is used to pressurize the input carbon dioxide to obtain supercritical carbon dioxide and then transmit it to the injector. The injector is used to spray supercritical carbon dioxide onto the wafer to be cleaned on the sample stage. The cleaning chamber has an opening that connects to the inlet of the carbon dioxide separator, and the outlet of the carbon dioxide separator connects to the inlet of the carbon dioxide storage device.

2. The supercritical carbon dioxide cleaning system according to claim 1, characterized in that, The pressure control device includes: a plunger pump, a buffer tank, and a pressure control module; The inlet of the plunger pump is connected to the outlet of the carbon dioxide storage device, the outlet of the plunger pump is connected to the buffer tank, and the buffer tank is connected to the input end of the injector through a transmission pipeline; The pressure control module controls the plunger pump connected to it to pressurize the input carbon dioxide in stages to obtain supercritical carbon dioxide.

3. The supercritical carbon dioxide cleaning system according to claim 1, characterized in that, The cleaning chamber is equipped with a first heating module and a first temperature sensor embedded in its wall. The supercritical carbon dioxide cleaning system further includes: a first heating control module, which is connected to the first heating module and the first temperature sensor to control the first heating module according to the temperature value of the cleaning chamber detected by the first temperature sensor.

4. The supercritical carbon dioxide cleaning system according to claim 1, characterized in that, The cleaning chamber further includes a pressure sensor, which is disposed in the cleaning chamber to detect the pressure in the cleaning chamber and control the pressure control device according to the pressure in the cleaning chamber, so that the pressure in the cleaning chamber maintains the carbon dioxide in the supercritical range.

5. The supercritical carbon dioxide cleaning system according to claim 4, characterized in that, A control valve is provided at the opening. When the cleaning chamber begins cleaning, the control valve is closed, and when the cleaning chamber ends cleaning, the control valve is opened.

6. The supercritical carbon dioxide cleaning system according to claim 1, characterized in that, A second heating module and a second temperature sensor are installed on both the first and second transmission pipelines; The supercritical carbon dioxide cleaning system further includes a second heating control module, which is connected to the second heating module and the second temperature sensor to control the second heating module based on the temperature values ​​of the first and second transmission pipelines detected by the second temperature sensor.

7. The supercritical carbon dioxide cleaning system according to claim 1, characterized in that, The injector includes: a flow divider and at least one nozzle; The splitter includes a primary annular manifold and a secondary circular orifice splitter plate. The output end of the primary annular manifold is connected to the secondary circular orifice splitter plate, the input end of the primary annular manifold is used to input carbon dioxide, and all nozzles are installed on the secondary circular orifice splitter plate.

8. The supercritical carbon dioxide cleaning system according to claim 1, characterized in that, It also includes: condensation unit; The output port of the carbon dioxide separator is connected to the input port of the condenser, and the output port of the condenser is connected to the input port of the carbon dioxide storage device. The condenser is used to convert gaseous carbon dioxide into liquid carbon dioxide.

9. The supercritical carbon dioxide cleaning system according to claim 1, characterized in that, The carbon dioxide separation device includes: a filtration module, a rotary separation chamber, and a pollutant collection chamber; The air inlet of the rotary separation chamber is connected to the opening, and the air outlet of the rotary separation chamber is connected to the input port of the carbon dioxide storage device. The filter module is located at the air outlet of the rotary separation chamber, and the pollutant collection chamber is connected to the rotary separation chamber to collect the pollutants separated by the rotary separation chamber.

10. The supercritical carbon dioxide cleaning system according to claim 9, characterized in that, The pollutant collection chamber is located below the rotating separation chamber, the air inlet of the rotating separation chamber is located on the side wall of the rotating separation chamber, and the air outlet of the rotating separation chamber is located above the rotating separation chamber.

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