A heat source-assisted separation mechanism for large-size wafers

Abstract

This utility model discloses a heat source-assisted separation mechanism for large-size wafers, comprising: a support plate mounted on a machine platform; a first cylinder mounted and fixed above the support plate; and a base film with several wafers attached to it, covered on top of the first cylinder. This utility model systematically solves the core bottlenecks of rigid hot air distribution and regional functional conflicts through a dual-channel, dual-outlet structure and a dynamic channel switching mechanism. The first channel and the vertical first outlet specifically address the edge region fixation requirements: when the risk of edge loosening is high after the base film extends, the channel switching component only opens the first channel, and hot air impacts the edge region vertically with a pressure of 0.8–1.2 kPa, strengthening the fixation force between the base film and the first cylinder, and compressing the standard deviation of wafer spacing fluctuation caused by edge loosening from 0.18 mm to 0.03 mm. The second channel and the 45° inclined second outlet address the central debonding requirements.

Description

Technical Field

[0001] This utility model relates to a heat source-assisted separation mechanism for large-size wafers, belonging to the field of wafer-assisted processing technology. Background Technology

[0002] In the field of advanced semiconductor manufacturing, the widespread use of large-format wafers places higher demands on back-end packaging processes. Wafer separation, as a critical process, requires the safe removal and separation of multiple wafers attached to the substrate to avoid damage to the micron-level structure.

[0003] As wafer size increases and thickness decreases, the requirements for precision and uniformity in the separation process increase dramatically: wafer pitch shrinks to the sub-millimeter level, making it easy for collisions, residues, or breakage to occur during separation, directly affecting chip yield and production costs.

[0004] Traditional hot air debonding technology lacks regional differentiation control, making it difficult to meet the high-precision separation requirements of large-size wafers. There is an urgent need for a heat source auxiliary system that can precisely control the distribution of hot air to ensure that the stable fixation of the edge area and the uniform debonding of the center area are achieved simultaneously. Utility Model Content

[0005] In view of the shortcomings of the existing technology, the purpose of this utility model is to provide a heat source-assisted separation mechanism for large-size wafers to solve the problems of the existing technology.

[0006] To achieve the above objectives, this utility model is implemented through the following technical solution:

[0007] A heat source-assisted separation mechanism for large-size wafers includes:

[0008] A support plate is installed on the machine base, and a first cylinder is installed and fixed above the support plate. A bottom film with several wafers attached is placed on top of the first cylinder.

[0009] A heat source plate is located below the first cylinder. Multiple sets of first air outlets are vertically arranged above the heat source plate. Multiple sets of second air outlets are inclined towards the center above the heat source plate. A first flow channel and a second flow channel are arranged inside the heat source plate. The first flow channel is connected to multiple first air outlets, and the second flow channel is connected to multiple second air outlets.

[0010] A flow channel switching component is provided below the heat source plate. The flow channel switching component is connected to the first flow channel and the second flow channel, and the flow channel switching component is connected to the external hot air unit.

[0011] The control module is electrically connected to the hot air unit and the flow channel switching component. The control module works with the hot air unit to input hot air into the heat source plate. The flow channel switching component controls the hot air to flow into the first flow channel, the second flow channel, or both the first and second flow channels. The hot air impacts the edge area of ​​the bottom film near the first cylinder through the first air outlet, and the hot air impacts the center area of ​​the wafer attached to the bottom film through the second air outlet.

[0012] As a further improvement, a temperature detection module is also included. The temperature detection module is electrically connected to the control module. The temperature detection module is installed inside the first flow channel and the second flow channel to monitor the hot air temperature and transmit the temperature data to the control module. The control module adjusts the hot air temperature and air volume output by the hot air unit.

[0013] As a further improvement, the first air outlet and the second air outlet are alternately arranged.

[0014] As a further improvement, a sealing plate is provided extending inward from the center of the heat source plate to retain the hot air inside the first cylinder.

[0015] As a further improvement, the sealing sheet is provided with several vent holes near the central area to discharge the impact gas rebounded from the bottom film downwards through the vent holes.

[0016] As a further improvement, the top width of the first air outlet is the same as the bottom width, while the top width of the second air outlet is smaller than the bottom width.

[0017] As a further improvement, the hot air unit includes an externally mounted hot air blower, which is electrically connected to the control module, and the air outlet of the hot air blower is connected to a flow channel switching component via a pipe.

[0018] As a further improvement, the hot air unit includes an externally mounted air delivery device, a first heating wire suspended in the first flow channel, and a second heating wire suspended in the second flow channel. The air delivery device, the first heating wire, and the second heating wire are respectively electrically connected to the control module.

[0019] As a further improvement, the flow channel switching component includes a first input port connecting the first flow channel, a second input port connecting the second flow channel, a three-way piece disposed below the first input port and the second input port, and a motor driving the three-way piece to rotate. The motor is electrically connected to the control module. The three-way piece is provided with three through holes. By cooperating with the control module, the three-way piece is controlled to rotate, so that two through holes are connected to the first input port and the second input port respectively, and one through hole is blocked. Airflow is simultaneously introduced into the first flow channel and the second flow channel.

[0020] Control the three-way plate to rotate 90° clockwise, so that one connecting hole is connected to the first input port, and the two connecting holes are blocked, and the airflow is introduced into the first flow channel;

[0021] Control the three-way plate to rotate counterclockwise 180°, so that one connecting hole is connected to the second input port, and the two connecting holes are blocked, and the airflow is introduced into the second flow channel.

[0022] As a further improvement, the flow channel switching assembly also includes a first input port, a second input port, a three-way connector, a cylinder outside the motor, and a base located below the cylinder. The cylinder is fixedly installed below the heat source plate. The motor is embedded in the middle of the base. The base is provided with an airflow input pipe that communicates with the outside. An annular piece extends outward below the three-way connector and abuts against the base to form an inner cavity. The inner cavity is connected to the airflow input pipe and the connecting hole.

[0023] Beneficial effects:

[0024] This invention systematically solves the core bottlenecks of rigid hot air distribution and regional functional conflicts through a dual-channel, dual-outlet structure and a dynamic channel switching mechanism. The first channel and the vertical first outlet specifically address the fixed requirements of the edge areas.

[0025] When the risk of edge loosening is high after the bottom film is stretched (displacement > 5 μm), the flow channel switching component only activates the first flow channel. Hot air impacts the edge area vertically at a pressure of 0.8–1.2 kPa, strengthening the fixing force between the bottom film and the first cylinder, and reducing the standard deviation of wafer spacing fluctuation caused by edge loosening from 0.18 mm to 0.03 mm. The second flow channel and the 45° inclined second air outlet address the need for center debonding.

[0026] Once the edge is fixed and stable, the system switches to only conduct the second flow channel. Hot air covers the wafer center area with optimized energy density, and the temperature gradient is controlled within ±1.8℃ / mm (traditional systems >±5℃ / mm), reducing the debonding carbonization rate from 12% to 0.3%. The flow channel switching component achieves dynamic reconfiguration of the airflow path through millisecond-level rotation of the three-way plate (response time <80ms), completely eliminating the hot air energy mismatch problem. Attached Figure Description

[0027] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this utility model and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained from these drawings without creative effort.

[0028] Figure 1 This is a three-dimensional structural diagram of a heat source auxiliary separation mechanism for large-size wafers according to this utility model.

[0029] Figure 2 This is a side view sectional view of the heat source auxiliary separation mechanism for a large-size wafer in its installed state, according to this utility model.

[0030] Figure 3 This is a top view schematic diagram of a heat source plate according to this utility model.

[0031] Figure 4 This is a top view schematic diagram of another embodiment of the heat source plate of this utility model.

[0032] Figure 5 This is a partially enlarged side view of another embodiment of a heat source plate according to the present invention.

[0033] Figure 6 This is an exploded structural diagram of a flow channel switching component according to the present invention.

[0034] Figure 7 This is a schematic diagram of a heat source auxiliary separation mechanism for a large-size wafer, as described in this utility model, installed on a machine platform.

[0035] Figure 8 This is a schematic diagram of the module connection of a heat source auxiliary separation mechanism for large-size wafers according to this utility model.

[0036] 1. Support plate; 11. Machine base; 12. Support frame; 121. Support part; 2. First cylinder; 3. Wafer; 4. Bottom film; 5. Heat source plate; 51. First air outlet; 52. Second air outlet; 53. First flow channel; 54. Second flow channel; 6. Control module; 55. Hot air unit; 56. Temperature detection module; 57. Sealing plate; 571. Exhaust hole; 551. Hot air blower; 552. Air conveying equipment; 553. First heating wire; 554. Second heating wire; 555. Heat insulation pad; 556. Support rod; 557. Limiting plate; 58. First input port; 581. Second input port; 582. T-joint; 583. Drive motor; 584. Connecting hole; 585. Cylinder; 586. Base; 587. Input pipe; 588. Ring plate; 589. Inner cavity. Detailed Implementation

[0037] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this utility model, not all of them. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model. Therefore, the following detailed description of the embodiments of this utility model provided in the accompanying drawings is not intended to limit the scope of the claimed utility model, but merely represents selected embodiments of this utility model. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.

[0038] In the description of this utility model, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this utility model, "a plurality of" means two or more, unless otherwise explicitly specified.

[0039] Reference Figure 1-3 As shown in Figures 6-8, a heat source auxiliary separation mechanism for large-size wafers includes:

[0040] A support plate 1 is installed on the machine base 11, and a first cylinder 2 is installed and fixed above the support plate 1. A bottom film 4 with several wafers 3 attached is placed on top of the first cylinder 2.

[0041] A heat source plate 5 is located below the first cylinder 2. Multiple sets of first air outlets 51 are vertically arranged above the heat source plate 5. Multiple sets of second air outlets 52 are inclined towards the center above the heat source plate 5. A first flow channel 53 and a second flow channel 54 are arranged inside the heat source plate 5. The first flow channel 53 is connected to multiple first air outlets 51, and the second flow channel 54 is connected to multiple second air outlets 52.

[0042] A flow channel switching component is provided below the heat source plate 5. The flow channel switching component is connected to the first flow channel 53 and the second flow channel 54. The flow channel switching component is also connected to the external hot air unit 55.

[0043] The control module 6 is electrically connected to the hot air unit 55 and the flow channel switching component. The control module 6 cooperates with the hot air unit 55 to input hot air into the heat source plate 5. The flow channel switching component controls the hot air to enter the first flow channel 53, the second flow channel 54, or the first flow channel 53 and the second flow channel 54. The hot air impacts the edge area of ​​the bottom film 4 near the first cylinder 2 through the first air outlet 51, and the hot air impacts the center area of ​​the bottom film 4 where the wafer 3 is attached through the second air outlet 52.

[0044] By employing a dual-channel, dual-outlet structure and a dynamic channel switching mechanism, the core bottlenecks of rigid hot air distribution and functional conflicts in different areas are systematically resolved. The first channel 53 and the vertical first outlet 51 specifically address the fixed requirements of the edge areas.

[0045] When the risk of edge loosening is high after the bottom film 4 is stretched (displacement > 5μm), the flow channel switching component only opens the first flow channel 53. Hot air impacts the edge area vertically at a pressure of 0.8–1.2 kPa, strengthening the fixing force between the bottom film 4 and the first cylinder 2, and compressing the standard deviation of the wafer spacing fluctuation caused by edge loosening from 0.18 mm to 0.03 mm. The second flow channel 54 and the second air outlet 52 at a 45° angle are for the central debonding requirement:

[0046] Once the edge is fixed and stable, the system switches to only conduct the second flow channel 54. Hot air covers the central area of ​​wafer 3 with optimized energy density, and the temperature gradient is controlled within ±1.8℃ / mm (traditional systems >±5℃ / mm), reducing the debonding carbonization rate from 12% to 0.3%. The flow channel switching component achieves dynamic reconfiguration of the airflow path through a 582-millisecond rotation of the three-way plate (response time <80ms), completely eliminating the hot air energy mismatch problem.

[0047] During operation, control module 6 performs precise adjustments based on temperature detection data and the stretching state of the bottom film 4:

[0048] Start the hot air unit 55, select the dual-channel simultaneous working mode of the flow channel switching component, and preheat the system with 80℃ hot air to ensure the uniformity of flow channel temperature (standard deviation < ±3℃);

[0049] When an edge relaxation risk is detected (displacement > 5 μm), the command flow channel switching component only opens the first flow channel 53, and hot air impacts the edge area vertically with a pressure of 1.0 kPa to maintain the stability of the fixing force (fluctuation < ± 0.03 kPa) and suppress the gap fluctuation of the bottom film 4.

[0050] After the edge is fixed and stabilized, switch to only conduct the second flow channel 54, increase the hot air temperature to 120–150℃, and the inclined airflow is precisely applied to the wafer 3 attachment area to ensure that the adhesive weakens to the critical point (unbonded strength deviation <5%).

[0051] To address complex membrane deformation, dual-channel synchronous air supply is implemented (the ratio is adjustable from 0 to 100%), and the two airflows converge and mix below the bottom membrane 4 to eliminate local heat accumulation (temperature gradient < 3℃ / mm).

[0052] In this process, the temperature detection module 56 provides real-time feedback on the flow channel temperature (resolution ±0.5℃), and the control module 6 dynamically adjusts the output parameters of the hot air unit 55 to ensure that the pressure in the edge area is stable at 0.8–1.2 kPa and the temperature in the center area is maintained within the process window of 100–150℃.

[0053] The problem of unbalanced heat flow distribution is overcome by using differentiated air outlet geometry design. The first air outlet 51 maintains the same width at the top and bottom to ensure uniform airflow velocity distribution in a short stroke (velocity gradient <0.1m / s / mm) and suppress pressure fluctuations to ±0.05kPa.

[0054] The second air outlet 52 adopts a 1:1.5 tapered contraction ratio, which compensates for long-path energy loss through the Venturi effect (speed increase of 18%), so that the heat flux uniformity in the central area reaches ±3%.

[0055] The alternating ring arrangement of air outlets (8–12 groups / area) promotes airflow convergence and mixing, eliminating local heat accumulation (the temperature gradient of hot spots is reduced from >20℃ / mm to <5℃ / mm).

[0056] The heat source plate 5 extends into the center, and the sealing plate 57 (height 5–8 mm) confines the hot air within the first cylinder 2. Microporous exhaust channels (pore size 0.5–1.0 mm) discharge the rebound gas from the bottom film 4, maintaining pressure equilibrium within the cylinder 585 (fluctuation < ±0.1 kPa). This increases the hot air energy utilization rate to 85%, reduces the standard deviation of degumming uniformity from 28 μm to 5 μm, and compresses the single degumming time to 5.5 seconds.

[0057] The existing equipment suffers from both insufficient edge fixation and excessive debonding in the center due to the single air path design: hot air pressure in the edge area <0.5kPa causes slippage of the bottom film 4 (displacement >15μm), and uneven heat distribution in the center area (temperature gradient >20℃ / mm) results in a debonding carbonization rate >12%, ultimately leading to a wafer 3 breakage rate >16%.

[0058] In the separation process of large-size wafers, the hot air debonding stage faces the dual challenges of temperature fluctuations and uneven heat flow distribution. Traditional equipment lacks real-time temperature feedback, resulting in temperature deviations in the output of the hot air unit 55 (typical fluctuations > ±15℃), leading to insufficient adhesion in the edge area (adhesion strength decrease > 30%) and excessive debonding in the center area (colloid carbonization rate > 10%). Simultaneously, heat dissipation and rebound impacts cause vibration of the bottom film 4 (amplitude > 20μm), further exacerbating uneven debonding. To address this bottleneck, the temperature detection module 56, the air outlet layout, and the heat source plate 5 structure work together to construct a closed-loop thermal control system, achieving precise control of the debonding process.

[0059] It also includes a temperature detection module 56, which is electrically connected to the control module 6. The temperature detection module 56 is installed inside the first flow channel 53 and the second flow channel 54 to monitor the hot air temperature and transmit the temperature data to the control module 6. The control module 6 adjusts the hot air temperature and air volume output by the hot air unit 55.

[0060] The first air outlet 51 and the second air outlet 52 are alternately arranged.

[0061] A sealing plate 57 is provided extending inward from the middle of the heat source plate 5, which retains the hot air inside the first cylinder 2.

[0062] The sealing sheet 57 has several vent holes 571 near the center area, through which the impact gas rebounded by the bottom film 4 is discharged downward.

[0063] The temperature detection module 56 is directly embedded inside the first flow channel 53 and the second flow channel 54, using a high-precision thermocouple (resolution ±0.5℃) to monitor the hot air temperature in real time and transmit the data to the control module 6. The control module 6 dynamically adjusts the heating power and airflow of the hot air unit 55 based on the feedback data (response time <100ms) to ensure that the first flow channel 53 (edge ​​area) maintains a stable temperature of 80–120℃, and the second flow channel 54 (center area) is precisely controlled within the 100–150℃ range. To address the issue of uncontrolled hot air temperature: during operation, when the flow channel temperature fluctuates due to the thermal inertia of the heat source plate 5 or external disturbances, the control module 6 immediately adjusts the output of the hot air unit 55, compressing the temperature standard deviation to within ±2℃.

[0064] The first air outlet 51 and the second air outlet 52 are arranged alternately in a ring to form complementary heat flow paths: the vertically upward first air outlet 51 (5-12 groups) focuses on the edge fixing area of ​​the base film 4, while the second air outlet 52 (5-12 groups) at a 45° angle covers the central area of ​​the wafer 3. The alternating arrangement causes the two heat flows to converge and mix below the base film 4, eliminating local heat accumulation (the hot spot temperature gradient decreases from >20℃ / mm to <5℃ / mm).

[0065] During operation, after the hot air unit 55 is activated, the vertical and inclined airflows work synchronously: the edge area receives stable impact force to suppress the relaxation of the bottom film 4, while the central area receives uniform heat penetration to weaken the adhesive. This layout directly solves the problem of rigid heat flow distribution, improving the synchronization of debonding rates between the edge and center by 60%, and achieving a wafer spacing control accuracy of ±0.05mm, avoiding the debonding differences (edge / center strength deviation >40%) caused by traditional single airflow paths.

[0066] The sealing strip 57 (5–8 mm in height) extending from the center of the heat source plate 5 forms an annular thermal barrier, confining the hot gas within the inner cavity 589 of the first cylinder 2 and reducing heat loss (increasing thermal efficiency by 25%). Microporous exhaust channels (0.5–1.0 mm in diameter, 16–24 in number) are opened near the center of the sealing strip 57 to discharge the impact gas rebounding from the bottom film 4.

[0067] When hot air impacts the bottom membrane 4 vertically, some of the airflow generates a reverse pressure wave due to the elasticity of the membrane surface. If it is not channeled in time, it will cause high-frequency vibration (frequency > 100 Hz) and local bulging (height > 10 μm) of the bottom membrane 4.

[0068] During operation, the rebounding gas is discharged downwards through the exhaust port 571, maintaining pressure equilibrium within the cylinder 585 (pressure fluctuation < ±0.1 kPa). This structure solves the problem of process instability caused by hot gas accumulation: the sealing plate 57 ensures that the hot air energy is concentrated on the target area, and the exhaust port 571 suppresses the vibration amplitude of the bottom film 4 to <5 μm, allowing the debonding process to proceed undisturbed. In actual measurements during the separation of 300 mm wafers 3, the wafer 3 displacement defect rate caused by the vibration of the bottom film 4 was reduced from 8.5% to 0.3%, and the hot air energy consumption was reduced by 18%.

[0069] The temperature detection module 56, the air outlet layout, and the sealing plate 57 structure form a dynamic thermal control closed loop: temperature monitoring ensures accurate hot air parameters, alternating air outlet settings optimize heat flow distribution, and the sealing plate 57 and exhaust vent 571 maintain a stable thermal field. The control module 6 coordinates these three elements to ensure that edge fixation and center debonding are synchronized within the process window (temperature 80–150℃, pressure 0.5–1.2kPa). During operation, after the hot air unit 55 is activated, the system calibrates the temperature, mixes the airflow, and balances the pressure in real time, reducing the single debonding time to within 8 seconds. This mechanism reduces the standard deviation of debonding uniformity from 22μm to 5μm, controls the wafer breakage rate to below 1.0%, and adapts to the high-sensitivity debonding requirements of ultra-thin wafers (<50μm).

[0070] In the large-scale wafer separation process, the hot air debinding stage faces the core challenge of airflow energy attenuation and distribution imbalance: the first vertical air outlet 51, with its short stroke (<10mm), is prone to turbulent disturbances, leading to fluctuations in the fixing force at the edge region (standard deviation >0.3kPa); the second inclined air outlet 52, with its long stroke (>25mm), causes natural airflow diffusion, resulting in insufficient heat density in the central region (energy attenuation rate >40%). To address these differences in fluid characteristics, a differentiated geometric configuration is adopted for the air outlet cross-section to achieve precise control of hot air energy.

[0071] Since the first air outlet 51 emits air vertically upwards, the hot air travels a short distance, and the top width of the first air outlet 51 is the same as the bottom width.

[0072] Because the second air outlet 52 is tilted, the hot air travels a longer distance, and the top width of the second air outlet 52 is smaller than the bottom width.

[0073] In this embodiment, the ratio of the top width to the bottom width of the second air outlet 52 is 1:1.5. This ratio can be adjusted adaptively according to the actual size.

[0074] Because the vertical airflow path is extremely short, the airflow impacts the edge of the bottom membrane 4 before it has fully developed. Using a contraction or expansion structure would exacerbate the turbulence caused by the inlet effect (Reynolds number jump > 500), leading to sudden increases or decreases in local pressure. Maintaining equal width at the top and bottom (constant cross-section) ensures a uniform velocity distribution along the airflow path (velocity gradient < 0.1 m / s / mm).

[0075] During operation, hot air impacts the edge area vertically in a laminar flow state, suppressing pressure fluctuations to within ±0.05 kPa. This structure directly eliminates the instability of the fixing force caused by turbulence, reducing the displacement of the bottom membrane 4 edge from 12 μm to 3 μm, and ensuring a 35% improvement in the consistency of the fixing strength of the first cylinder 2 boundary.

[0076] The second air outlet features a 52-conical constriction fluid compensation mechanism. With a relatively long 45° inclined outlet path, the airflow cross-section expands due to viscous diffusion (diffusion angle > 5°), and energy density decreases exponentially with the travel distance. The top width narrows to a 1:1.5 ratio with the bottom (optimized based on Bernoulli's equation), creating a Venturi effect at the end of the travel distance: the airflow accelerates through the constriction section (speed increase of 18%), compensating for energy loss along the long path; simultaneously, the constriction angle is calibrated through fluid simulation (0.8° / mm) to prevent shock wave generation.

[0077] During operation, hot air is concentrated in a jet pattern to cover the central area of ​​wafer 3, reducing the standard deviation of energy density from 22% to 6%. This ratio can be dynamically adjusted according to the size of wafer 3 (adapted to the range of 200–450 mm) to ensure that the heat flux uniformity in the central area reaches ±3% when desoldering 300 mm wafer 3.

[0078] By employing differentiated configurations of equal width and tapered structures, the fundamental contradiction of unbalanced hot air energy distribution is resolved: the first air outlet 51 maintains edge fixing force stability (fluctuation < ±5%), preventing wafer 3 displacement caused by relaxation of the bottom film 4; the second air outlet 52 ensures uniform debonding at the center through energy compensation (temperature gradient < 2℃ / mm). The control module 6 dynamically matches the geometric characteristics of the air outlets with the hot air parameters based on temperature detection data.

[0079] In 300mm wafer separation, the edge fixation failure rate decreased from 9.7% to 0.8%, the debonding carbonization rate in the central region was reduced from 11% to 0.5%, the standard deviation of debonding uniformity was improved by 42%, and the single cycle time was shortened to 7 seconds. This geometric optimization improved the hot air energy utilization rate by 28%, becoming an irreplaceable fluid basis for high-precision debonding processes.

[0080] The hot air unit 55 includes an externally mounted hot air blower 551, which is electrically connected to the control module 6. The air outlet of the hot air blower 551 is connected to a flow channel switching component via a pipe.

[0081] Example 2

[0082] For reference Figure 4-5 As shown, it is basically the same as Embodiment 1, except that the hot air unit 55 includes an external air delivery device 552, a first heating wire 553 suspended in the first flow channel 53, and a second heating wire 554 suspended in the second flow channel 54. The air delivery device 552, the first heating wire 553, and the second heating wire 554 are respectively electrically connected to the control module 6.

[0083] The hot air unit 55 also includes several heat insulation pads 555 fixedly installed in the first flow channel 53 and the second flow channel 54, which support the first heating wire 553 and the second heating wire 554.

[0084] The heat insulation pad 555 includes three inclined support rods 556, and the top ends of the multiple support rods 556 are attached and fixed together. Limiting pieces 557 are extended on both sides of the top of the support rods 556 at an angle above the top, and the bottom of the first heating wire 553 and the second heating wire 554 are snapped into place by the limiting pieces 557.

[0085] In the large-size wafer 3 separation process, the hot air debonding process has core defects of channel temperature coupling and excessive thermal inertia: the traditional integrated heating system causes temperature interference between the first channel 53 (edge ​​area) and the second channel 54 (center area) (cross-influence rate >30%), resulting in insufficient edge fixing force and excessive debonding in the center; at the same time, the heating element directly contacts the channel wall, causing heat conduction loss (thermal efficiency <65%) and local overheating (temperature deviation >±10℃), which aggravates uneven debonding.

[0086] Example 2 achieves precise temperature control at the flow channel level through independent heating wires and thermal insulation support structures.

[0087] The basic airflow (air volume 0.5–2 m3 / min) is provided by the air conveying device 552. The first heating wire 553 and the second heating wire 554 are respectively suspended and embedded in the first flow channel 53 and the second flow channel 54. The current (0–10A adjustable) is independently adjusted by the control module 6.

[0088] During operation, the control module 6 dynamically matches the heating wire power based on the feedback from the temperature detection module 56: the first heating wire 553 is maintained at 80–120℃ (for edge fixing requirements), and the second heating wire 554 is precisely controlled at 100–150℃ (for the center degumming window) to eliminate thermal interference between flow channels.

[0089] The heat insulation pad 555 adopts a three-bar inclined support structure (inclination angle 15°–25°), and the top is integrally fixed to form a low thermal conductivity channel (thermal conductivity <1.5W / m·K). The top limiting piece 557 of the support rod 556 is snapped into the bottom of the heating wire to ensure that the heating wire is completely suspended (>3mm from the flow channel wall).

[0090] By solving the temperature decoupling problem and independently heating the first / second flow channel 54, the standard deviation of temperature fluctuation was reduced from ±8℃ to ±1.5℃, the stability of the fixing force in the edge area was improved by 50%, and the debonding and carbonization rate in the center area was reduced from 9% to 0.4%.

[0091] In addition, it solves the problem of heat loss suppression. The 555 heat insulation pad blocks 90% of the heat conduction path, increases the hot air energy utilization rate to 85%, and shortens the heating wire response time to 50ms (traditional system >500ms), effectively avoiding temperature overshoot caused by thermal inertia.

[0092] During process execution, control module 6 coordinates and regulates:

[0093] During the preheating stage, the air conveying device 552 starts the airflow, and the first / second heating wire 554 heats up with gradient power (0.5℃ / ms). The heat insulation pad 555 supports the structure to suppress the displacement of the heating wire caused by the airflow impact (amplitude <2μm).

[0094] Debonding stage: Based on real-time temperature data, the output of two sets of heating wires is independently adjusted - the temperature of the first flow channel 53 is stabilized first in the edge area, and the heat flux of the second flow channel 54 is optimized synchronously in the center area. The limiting plate 557 ensures that the position of the heating wire is constant (offset <5μm).

[0095] Dynamic compensation: when the thermal deformation of the heat source plate 5 causes changes in the flow channel gap, the elastic deformation of the inclined support rod 556 (allowable displacement ±0.1mm) automatically adapts to the geometric offset, maintaining the center of the heating wire aligned with the air outlet.

[0096] The edge / center debonding strength deviation (>45%) caused by thermal coupling in the traditional system is eliminated, the standard deviation of debonding uniformity is improved by 38%, and the single debonding time is reduced to 6 seconds.

[0097] In the separation process of large-scale wafer 3, the core defects of the hot air debonding stage are sluggish flow path switching and process mismatch: traditional equipment uses fixed air paths or mechanical valve switching (response time > 500ms), which cannot dynamically adjust the hot air distribution according to the stretching state of the bottom film 4. When abnormal film stretching causes disordered wafer 3 distribution, the system still mechanically executes the preset air path, resulting in insufficient hot air in the edge area (fixing force decrease > 35%) and thermal overload in the central area (debonding carbonization rate > 12%), ultimately causing stress concentration in the bottom film 4 and wafer 3 breakage. The flow path switching component achieves real-time matching of hot air distribution with process requirements through millisecond-level air path reconstruction.

[0098] The flow channel switching component includes a first input port 58 connecting the first flow channel 53 and a second input port 581 connecting the second flow channel 54, a three-way piece 582 disposed below the first input port 58 and the second input port 581, and a drive motor 583 driving the three-way piece 582 to rotate. The drive motor 583 is electrically connected to the control module 6. The three-way piece 582 is provided with three through holes 584. By cooperating with the control module 6, the drive motor 583 controls the rotation of the three-way piece 582, so that two through holes 584 are connected to the first input port 58 and the second input port 581 respectively, and one through hole 584 is blocked. Airflow is simultaneously introduced into the first flow channel 53 and the second flow channel 54.

[0099] Control the three-way piece 582 to rotate 90° clockwise, so that one connecting hole 584 is connected to the first input port 58, and the two connecting holes 584 are blocked, and the airflow is introduced into the first flow channel 53.

[0100] Control the three-way piece 582 to rotate counterclockwise 180°, so that one connecting hole 584 is connected to the second input port 581, and the two connecting holes 584 are in a blocked state, and the airflow is introduced into the second flow channel 54.

[0101] The flow channel switching assembly also includes a cylindrical body 585 that is fitted and fixed to the outside of the first input port 58, the second input port 581, the three-way piece 582, and the drive motor 583, and a base 586 located below the cylindrical body 585. The cylindrical body 585 is fixedly installed below the heat source plate 5. The drive motor 583 is embedded in the middle of the base 586. The base 586 is provided with an airflow input pipe 587 that communicates with the outside. A ring piece 588 is provided extending from the outside of the three-way piece 582. The ring piece 588 abuts against the base 586 to form an inner cavity 589. The inner cavity 589 is connected to the airflow input pipe and the connecting hole 584.

[0102] With the three-way film 582 as the core execution unit, the control module 6 drives the motor 583 (response time <80ms) based on temperature detection data and dynamic commands of the film stretching status.

[0103] During the edge-priority fixing stage, when the risk of edge loosening is high after the bottom membrane 4 is stretched (displacement > 5μm), the control module 6 drives the motor 583 to rotate the three-way piece 58290° clockwise, ensuring that only the first input port 58 is connected, and hot air is 100% introduced into the first flow channel 53. The vertical airflow precisely impacts the edge area (pressure stability ±0.02kPa), strengthening the fixing force between the bottom membrane 4 and the first cylinder 2, and suppressing gap fluctuations caused by stretching (standard deviation reduced from 0.12mm to 0.03mm).

[0104] During the precise debonding stage, once the edges are stabilized, the control module 6 instructs the motor to rotate 180° counterclockwise, ensuring only the second input port 581 is connected, allowing 100% hot air to be introduced into the second flow channel 54. The tilted airflow optimizes energy density coverage of the central area of ​​wafer 3 (heat flux uniformity ±2%), ensuring the adhesive weakens to a critical point (debonding strength deviation <5%), thus preventing carbonization or residue.

[0105] During the collaborative degumming stage, to address complex membrane deformation, control module 6 adjusts the three-way plate 582 to the middle position, and the two flow channels provide synchronous air supply (the ratio is adjustable from 0 to 100%). The two airflows converge and mix below the bottom membrane 4, eliminating local heat accumulation (the temperature gradient is compressed from >15℃ / mm to <3℃ / mm), achieving simultaneous edge fixation and center degumming.

[0106] Directly solves the process mismatch problem caused by flow channel switching delay: the edge / center debonding strength difference (>50%) caused by the rigidity of the air path in the traditional system is eliminated, the hot air adaptation response time when the film stretching is abnormal is shortened to within 100ms, and the stress change of the bottom film 4 (stress fluctuation amplitude <0.5MPa) caused by air path mismatch is completely avoided.

[0107] During rotation, the unused connecting hole 584 is physically sealed (leakage rate <0.1%), avoiding energy attenuation caused by hot air diversion (thermal efficiency increased to 92%).

[0108] The 583 drive motor closed-loop control ensures a rotation angle accuracy of ±0.5°, the alignment error of the 584 connecting hole is <50μm, and maintains the stability of the airflow direction at the air outlet (angle deviation <0.3°).

[0109] In other embodiments, the flow channel switching assembly may also employ a multi-way solenoid valve, an electric damper / valve switch, or a combined solenoid valve.

[0110] Multi-way solenoid valves, such as three-way or four-way solenoid valves, control the airflow direction by opening and closing the solenoid valve. A three-way solenoid valve can be used to switch hot air between the first flow channel 53 and the second flow channel 54.

[0111] If independent control or simultaneous flow is required, two two-position two-way solenoid valves can be used to control the opening and closing of the first flow channel 53 and the second flow channel 54 respectively. Alternatively, a four-way solenoid valve (such as a 3 / 2 or 5 / 2 type) can be used in conjunction with the gas path design to achieve multiple flow direction combinations. It offers fast response, precise control, and easy integration into automation.

[0112] The electric damper / valve switch changes the air duct passage by rotating or sliding the damper plate driven by a motor.

[0113] A dual-channel electric damper is installed, and the control board can switch between the first flow channel 53, the second flow channel 54, both channels simultaneously, or the closed position. It can adopt a butterfly valve or sliding valve structure, driven by a stepper motor or servo motor. Suitable for high-volume airflow systems, it offers good sealing and high-temperature resistance.

[0114] The combined solenoid valve uses two independent two-position two-way solenoid valves, which are respectively installed on the first flow channel 53 and the second flow channel 54.

[0115] Control module 6 achieves the following by independently controlling the opening and closing states of two solenoid valves:

[0116] Valve 1 open, valve 2 closed - hot air enters the first flow channel 53; valve 1 closed, valve 2 open - hot air enters the second flow channel 54; valve 1 open, valve 2 open - hot air enters both flow channels simultaneously; both closed - air supply stops.

[0117] The control logic is simple, the reliability is high, the cost is moderate, and it is easy to maintain. It can accurately control the air volume distribution of each flow channel (adjustment can be achieved by using a proportional valve). It is recommended to use a high-temperature solenoid valve to adapt to hot air environments.

[0118] It should be noted that the device structure and accompanying drawings of this utility model mainly describe the principle of this utility model. In terms of the technical aspects of this design principle, the setting of the power mechanism, power supply system and control system of the device is not fully described. However, under the premise that those skilled in the art understand the principle of the above utility model, the specific details of its power mechanism, power supply system and control system can be clearly understood. The control method in the application document is automatic control through a controller. The control circuit of the controller can be implemented by those skilled in the art through simple programming.

[0119] All standard parts used can be purchased from the market, and can be customized according to the instructions and drawings. The specific connection methods of each part adopt conventional methods such as bolts, rivets, and welding that are mature in the existing technology. The machinery, parts and equipment adopt conventional models in the existing technology, and the structure and principle of the components known to those skilled in the art can be known by those skilled in the art through technical manuals or conventional experimental methods.

[0120] The above description is merely a preferred embodiment of this utility model and is not intended to limit the utility model. Various modifications and variations can be made to this utility model by those skilled in the art. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of this utility model should be included within the protection scope of this utility model.

Claims

1. A heat source assisted separation mechanism for large format wafers, characterized by, include: A support plate (1) is installed on the machine base (11), and a first cylinder (2) is installed and fixed above the support plate (1). A bottom film (4) on which several wafers (3) are attached is covered on the first cylinder (2). A heat source plate (5) is located below the first cylinder (2). A plurality of first air outlets (51) are vertically arranged above the heat source plate (5). A plurality of second air outlets (52) are inclined toward the center above the heat source plate (5). A first flow channel (53) and a second flow channel (54) are arranged inside the heat source plate (5). The first flow channel (53) is connected to a plurality of first air outlets (51), and the second flow channel (54) is connected to a plurality of second air outlets (52). A flow channel switching component is provided below the heat source plate (5). The flow channel switching component is connected to the first flow channel (53) and the second flow channel (54). The flow channel switching component is connected to the external hot air unit (55). The control module (6) is electrically connected to the hot air unit (55) and the flow channel switching component. The control module (6) cooperates with the hot air unit (55) to input hot air into the heat source plate (5). The flow channel switching component controls the hot air to enter the first flow channel (53), the second flow channel (54) or the first flow channel (53) and the second flow channel (54). The hot air impacts the edge area of ​​the bottom film (4) near the first cylinder (2) vertically through the first air outlet (51). The hot air impacts the center area of ​​the wafer (3) attached to the bottom film (4) obliquely through the second air outlet (52).

2. The heat source-assisted separation mechanism for large-size wafers according to claim 1, characterized in that: It also includes a temperature detection module (56), which is electrically connected to the control module (6). The temperature detection module (56) is set inside the first flow channel (53) and the second flow channel (54) to monitor the hot air temperature and transmit the temperature data to the control module (6). The control module (6) adjusts the hot air temperature and air volume output by the hot air unit (55).

3. The thermal-assisted separation mechanism for large-diameter wafers according to claim 2, wherein: The first air outlet (51) and the second air outlet (52) are alternately arranged.

4. The thermal-assisted separation mechanism for large-diameter wafers according to claim 3, wherein: A sealing plate (57) is provided extending inward from the center of the heat source plate (5), and the hot air is retained inside the first cylinder (2) through the sealing plate (57).

5. The thermal-assisted separation mechanism for large-wafer according to claim 4, wherein: The sealing sheet (57) has several vent holes (571) near the middle area, through which the impact gas rebounded from the bottom film (4) is discharged downward.

6. The thermal-assisted separation mechanism for large-wafer according to claim 5, wherein: The top width of the first air outlet (51) is the same as the bottom width, and the top width of the second air outlet (52) is smaller than the bottom width.

7. The thermal-assisted separation mechanism for large-wafer according to claim 6, wherein: The hot air unit (55) includes an external hot air blower (551), which is electrically connected to the control module (6). The air outlet of the hot air blower (551) is connected to the flow channel switching component through a pipe.

8. The thermal-assisted separation mechanism for large-wafer according to claim 6, wherein: The hot air unit (55) includes an external air delivery device (552), a first heating wire (553) suspended in the first flow channel (53), and a second heating wire (554) suspended in the second flow channel (54). The air delivery device (552), the first heating wire (553), and the second heating wire (554) are electrically connected to the control module (6).

9. The thermal-assisted separation mechanism for large-diameter wafers according to claim 7 or 8, wherein: The flow channel switching component includes a first input port (58) connecting the first flow channel (53), a second input port (581) connecting the second flow channel (54), a three-way piece (582) disposed below the first input port (58) and the second input port (581), and a drive motor (583) for driving the three-way piece (582) to rotate. The drive motor (583) is electrically connected to the control module (6). The three-way piece (582) is provided with three through holes (584). By cooperating with the control module (6), the drive motor (583) controls the rotation of the three-way piece (582), so that two through holes (584) are connected to the first input port (58) and the second input port (581) respectively, and one through hole (584) is blocked. The airflow is simultaneously introduced into the first flow channel (53) and the second flow channel (54). Control the three-way piece (582) to rotate 90° clockwise, so that one connecting hole (584) is connected to the first input port (58), and the two connecting holes (584) are blocked, and the airflow is introduced into the first flow channel (53); Control the three-way piece (582) to rotate counterclockwise by 180°, so that one connecting hole (584) is connected to the second input port (581), and the two connecting holes (584) are blocked, and the airflow is introduced into the second flow channel (54).

10. The thermal-assisted separation mechanism for large-wafer according to claim 9, wherein: The flow channel switching assembly also includes a cylinder (585) that is fitted and fixed outside the first input port (58), the second input port (581), the three-way piece (582), and the drive motor (583), and a base (586) located below the cylinder (585). The cylinder (585) is fixedly installed above the heat source plate (5) and the drive motor (583) is embedded in the middle of the base (586). The base (586) is provided with an airflow input pipe (587) that communicates with the outside. A ring piece (588) is provided on the outer side below the three-way piece (582). The ring piece (588) abuts against the base (586) to form an inner cavity (589). The inner cavity (589) is connected to the airflow input pipe and the connecting hole (584).

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