Temperature monitoring module and thermal annealing device
By setting up multiple heating zones on the heating stage and a temperature detection unit above it, the power of the heating unit can be adjusted in real time, solving the problem of not being able to monitor the wafer surface temperature in real time in the existing technology, and improving product yield.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- CHONGQING XINLIAN MICROELECTRONICS CO LTD
- Filing Date
- 2025-04-23
- Publication Date
- 2026-07-31
AI Technical Summary
Existing thermal annealing equipment cannot monitor wafer surface temperature in real time, leading to a decrease in product yield.
Multiple heating zones are set up on the heating stage, and a temperature detection unit is installed above them. The power of the heating unit is adjusted in real time by the control unit to precisely control the temperature of the wafer surface.
This achieved uniform temperature control on the wafer surface, improving product yield.
Smart Images
Figure CN224583712U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor manufacturing, and in particular to a temperature monitoring module and a thermal annealing device. Background Technology
[0002] Thermal annealing is a process in which a material is heated to a specific temperature and held for a certain period of time, and then cooled at a controlled rate to achieve the desired microstructure. Its main purposes include: repairing lattice damage, activating dopants, adjusting material properties, and eliminating internal stress.
[0003] Existing thermal annealing equipment typically uses electric heaters for heating and only has a temperature sensor on the stage to monitor the stage temperature. It cannot obtain the wafer surface temperature in real time, which will affect the thin film resistance and grain size of the product, thus causing a decrease in product yield.
[0004] Therefore, how to effectively control the surface temperature of wafers and thus improve product yield has become a technical problem that needs to be solved by those skilled in the art. Utility Model Content
[0005] The purpose of this invention is to provide a temperature monitoring module and a thermal annealing device to solve the problem that existing thermal annealing devices cannot detect the wafer surface temperature in real time, resulting in a decrease in product yield.
[0006] To achieve the above objectives, this utility model provides a temperature monitoring module, comprising:
[0007] Multiple heating units are disposed on a heating stage for heating a wafer; wherein, the heating stage is provided with multiple heating areas, and at least one heating unit is disposed in any heating area;
[0008] A temperature detection unit is disposed above the heating stage and is used to detect the real-time temperature of the wafer surface located in different heating areas;
[0009] The control unit is communicatively connected to the temperature detection unit and the heating unit, and is used to adjust the power of one or more heating units located in the corresponding heating region according to the real-time temperature of the wafer surface located in different heating regions obtained by the temperature detection unit.
[0010] Optionally, the number of heating units in any of the heating regions may be equal or unequal.
[0011] Optionally, the heating area is rectangular or annular.
[0012] Optionally, the heating area is rectangular, and the plurality of heating units located in the heating area are arranged in a matrix.
[0013] Optionally, the heating area is annular, and the plurality of heating units located in the heating area are evenly arranged.
[0014] Optionally, the distribution density of heating units in the heating region near the center of the wafer is lower than the distribution density of heating units in the heating region far from the center of the wafer.
[0015] Optionally, the heating unit includes a laser tube that emits a laser beam onto the surface of the wafer to heat the wafer;
[0016] The laser emission angle is set at an angle to the plane where the wafer is located.
[0017] Optionally, the heating unit can rotate about its own axis.
[0018] Optionally, the temperature detection unit can rotate around its own axis to detect the real-time temperature of the wafer surface in different heating areas.
[0019] To achieve the above objectives, this utility model also provides a hot annealing device, comprising: a cavity, a heating stage, and a temperature monitoring module as described above;
[0020] The heating stage is located inside the cavity and is used to support the wafer;
[0021] The temperature detection unit is disposed on the side wall of the cavity and located above the heating stage;
[0022] The temperature monitoring module detects the real-time temperature of the wafer surface during the hot annealing process in the hot annealing apparatus, and adjusts the power of one or more heating units based on the real-time temperature.
[0023] Compared with existing temperature detection methods, the temperature monitoring module and thermal annealing device provided in this application have the following advantages:
[0024] The temperature monitoring module provided in this application, by placing the temperature detection unit above the heating stage, can acquire the real-time temperature of the wafer surface. Compared with the prior art of setting a temperature sensor on the heating stage to detect the temperature of the heating stage, it can reflect the temperature change of the wafer surface in real time, thereby enabling more accurate control of the power of each heating unit to ensure uniform heating of the wafer surface and improve product yield. At the same time, by setting multiple heating areas on the heating stage, the position of the heating unit that needs to be adjusted can be more accurately located according to the different real-time temperatures of the wafer surface in each heating area, thereby achieving precise temperature control of the wafer surface. Attached Figure Description
[0025] Figure 1 This is a schematic diagram of the structure of a thermal annealing machine in the prior art.
[0026] Figure 2 This is a schematic diagram of the structure of the temperature monitoring module provided in an embodiment of the present utility model;
[0027] Figure 3 A schematic diagram illustrating how the control unit adjusts the power of the heating unit according to an embodiment of this utility model;
[0028] Figure 4 A schematic diagram of the arrangement of the first heating unit provided in this embodiment of the utility model;
[0029] Figure 5 A schematic diagram of the arrangement of the second type of heating unit provided in this embodiment of the present utility model;
[0030] Figure 6 A schematic diagram of a first heating unit heating a wafer, provided for an embodiment of this utility model;
[0031] Figure 7 A schematic diagram of a second heating unit heating a wafer, provided in an embodiment of this utility model;
[0032] Figure 8 This is a schematic diagram of the structure of the heat annealing apparatus provided in an embodiment of the present invention.
[0033] The explanations of the reference numerals in the accompanying drawings are as follows:
[0034] 1-Heating unit; 2-Temperature detection unit; 3-Heating stage; 4-Heating area; 5-Wafer; 6-Cavity.
[0035] 10 - Electric heater; 20 - Temperature sensor; 30 - Stage. Detailed Implementation
[0036] To make the objectives, advantages, and features of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, and are only used to facilitate and clarify the explanation of the objectives of the embodiments of this utility model. Furthermore, the structures shown in the drawings are often part of the actual structure. In particular, different drawings may emphasize different aspects and sometimes use different scales.
[0037] As used herein, the singular forms “a,” “an,” and “the” include plural objects; the term “or” is generally used to mean “and / or”; the term “a number” is generally used to mean “at least one”; and the term “at least two” is generally used to mean “two or more”. Furthermore, the terms “first,” “second,” and “third” are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as “first,” “second,” or “third” may explicitly or implicitly include one or at least two of that feature. “One end” and “the other end,” as well as “proximal end” and “distal end,” generally refer to two corresponding parts, including not only endpoints. The terms “installed,” “connected,” and “joined” should be interpreted broadly; for example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two elements or the interaction between two elements. Furthermore, as used in this specification, the phrase "one element is disposed on another element" generally only indicates that there is a connection, coupling, cooperation, or transmission relationship between the two elements, and the connection, coupling, cooperation, or transmission between the two elements can be direct or indirect through an intermediate element. It should not be construed as indicating or implying a spatial positional relationship between the two elements, i.e., one element can be located arbitrarily inside, outside, above, below, or to the side of another element, unless otherwise explicitly stated. The terms "above," "below," "top," and "bottom" generally refer to relative positional relationships arranged according to the direction of gravity; the terms "vertical" or "vertical direction" generally refer to the direction of gravity, which is generally perpendicular to the ground; "horizontal" or "horizontal plane direction" generally refers to a direction parallel to the ground. Those skilled in the art can understand the specific meaning of the above terms in this specification according to the specific circumstances.
[0038] The purpose of this invention is to provide a temperature monitoring module and a thermal annealing device to solve the problem that existing thermal annealing devices cannot detect the wafer surface temperature in real time, resulting in a decrease in product yield.
[0039] As will be understood by those skilled in the art, annealing after chemical electroplating is a crucial step in improving the performance and stability of the coating. It eliminates internal stress, increases crystallinity and density, enhances the adhesion between the coating and the substrate, and improves corrosion resistance and appearance. Annealing is influenced by factors such as temperature, time, environment, and cooling rate. Please refer to [reference needed]. Figure 1Existing annealing equipment typically uses an electric heater 10 to heat the wafer 5, and only a temperature sensor 20 is installed on the stage 30. This sensor can only monitor the temperature near the stage 30 and cannot monitor the temperature changes on the surface of the wafer 5 in real time. This affects the temperature control in the thermal annealing process, thus affecting the effectiveness of the thermal annealing process and leading to a decrease in product yield. Based on this, this embodiment provides a temperature monitoring module and a thermal annealing device. By placing the temperature detection module above the heating stage to monitor the real-time temperature of the wafer surface, and by setting the heating stage into multiple different heating zones, the location of the heating unit that needs to be heated can be quickly located based on the different real-time temperatures of each heating zone, and adjustments can be made in a timely manner.
[0040] Please refer to Figures 2 to 3 This invention provides a temperature monitoring module, comprising: multiple heating units 1 disposed on a heating platform 3 for heating a wafer 5; wherein the heating platform 3 has multiple heating areas 4, and at least one heating unit 1 is disposed in any heating area 4; a temperature detection unit 2 disposed above the heating platform 3 for detecting the real-time temperature of the wafer 5 surface located in different heating areas 4; and a control unit (not shown in the figure) communicatively connected to the temperature detection unit 2 and the heating units 1 for adjusting the power of one or more heating units 1 located in the corresponding heating area 4 according to the real-time temperature of the wafer 5 surface located in different heating areas 4 obtained by the temperature detection unit 2. It should be noted that in this embodiment, the heating unit 1 may be a laser tube, which heats the wafer 5 by providing laser light to the surface of the wafer 5. The temperature detection unit 2 may be an infrared sensor, which can obtain the real-time temperature of the wafer 5 surface by monitoring the infrared radiation of the target wafer and converting the signal. The control unit can be a PID (Proportional-Integral-Derivative) control system, which, based on linear control technology using feedback regulation, achieves precise control of the system by adjusting the proportional, integral, and derivative components of the error in real time. It is widely used in temperature control. The specific structure and operating principles of a PID system can be found in existing technologies, and will not be elaborated upon in this embodiment.
[0041] In an optional embodiment, please refer to Figure 3The heating stage 3 has multiple heating zones 4, each containing at least one heating unit 1. The heating unit 1 heats the wafer 5 by emitting a laser beam onto its surface. Each heating unit 1 is independently controlled, and during heating, each unit forms a heating position on the wafer 5 surface. The temperature detection unit 2 can acquire the real-time temperature at each heating position within each heating zone 4. The control unit is communicatively connected to the temperature detection unit 2 and each heating unit 1. It can acquire the real-time temperature data from the temperature detection unit 2 and compare it with a preset temperature to determine the real-time temperature at each heating position within each heating zone 4. The real-time temperature conditions include three types: real-time temperature exceeding the preset temperature, real-time temperature below the preset temperature, and real-time temperature matching the preset temperature. It should be noted that the preset temperature can be a range value with a maximum and a minimum value. "Real-time temperature exceeding the preset temperature" means the real-time temperature is greater than the maximum value of the preset temperature; "real-time temperature below the preset temperature" means the real-time temperature is less than the minimum value of the preset temperature; and "real-time temperature matching the preset temperature" means the real-time temperature is within the range of the preset temperature. The control unit can adjust the power of the heating unit 1 located at each heating position based on the real-time temperature of each heating position. Specifically, the adjustment method can be as follows: when the real-time temperature of a heating position in a certain heating zone 4 is lower than the preset temperature, the power of the heating unit 1 located at the heating position in that heating zone 4 is increased; when the real-time temperature of a heating position in a certain heating zone 4 is higher than the preset temperature, the power of the heating unit 1 located at the heating position in that heating zone 4 is decreased.
[0042] This configuration, by placing the temperature detection unit 2 above the heating stage 3, enables the acquisition of the real-time temperature of the wafer 5 surface. Compared with the existing technology of setting a temperature sensor on the heating stage 3 to detect the temperature of the heating stage 3, it can reflect the temperature changes of the wafer 5 surface in real time, thereby enabling more accurate control of the power of each heating unit 1 to ensure uniform heating of the wafer 5 surface and improve product yield. At the same time, by setting multiple heating areas 4 on the heating stage 3, the position of the heating unit 1 that needs to be adjusted can be more accurately located according to the different real-time temperatures of the wafer 5 surface in each heating area 4, thereby achieving precise temperature control of the wafer 5 surface.
[0043] Please refer to Figure 4 and Figure 5The number of heating units 1 in any heating region 4 may be equal or unequal. It should be noted that, to ensure uniform heating of the wafer 5 surface, the heating units 1 are typically evenly arranged on the heating stage 3. Therefore, when different heating regions 4 are provided on the heating stage 3, the number of heating units 1 in each heating region 4 may be equal or unequal. As an optional embodiment, when the number of heating units 1 in the current heating region 4 is small, the power of the heating units 1 can be appropriately increased to ensure that the temperature of the wafer 5 in this region can match that of other regions; conversely, when the number of heating units 1 in the current heating region 4 is large, the power of the heating units 1 can be appropriately decreased to ensure that the temperature of the wafer 5 in this region can match that of other regions.
[0044] For further information, please refer to the following: Figures 4 to 5 The heating area 4 is rectangular or annular. It should be noted that... Figure 4 and Figure 5 This is for illustrative purposes only and does not mean that the heating area 4 must be divided in this way. The part of the heating stage 3 that contacts the wafer 5 can be divided into multiple rectangular areas and multiple irregular areas with arc edges; it can also be divided into a circular area and multiple annular areas. This embodiment does not limit this. The heating area 4 can also be divided into other shapes, such as triangles, squares, trapezoids or other irregular shapes.
[0045] Please refer to Figure 4 The heating area 4 is rectangular, and the multiple heating units 1 located within the heating area 4 are arranged in a matrix. It should be noted that... Figure 4 As shown, the heating area 4 is rectangular, and the heating units 1 in the heating area 4 are arranged in a matrix of multiple rows and columns. In other embodiments, the heating units 1 may also be evenly distributed from the center to the surrounding areas, or arranged in a certain regular pattern; this embodiment does not impose any restrictions on this.
[0046] Please refer to Figure 5 The heating area 4 is circular, and multiple heating units 1 are evenly arranged within it. It should be noted that... Figure 5 As shown, the heating region 4 is annular, and multiple heating units 1 in the heating region 4 are evenly arranged along the circumference of the heating stage 3 to ensure uniform heating of the wafer 5 surface. In other embodiments, the heating units 1 can also be arranged in a regular staggered manner. For example, six heating units 1 are arranged in the same heating region 4, and these six heating units 1 are divided into two groups. One group of heating units 1 is located on the same circumference, and the other group of heating units 1 is located on another circumference, and the two groups of heating units 1 are arranged alternately. This embodiment does not limit this.
[0047] Furthermore, the distribution density of heating units 1 in the heating region 4 near the center of wafer 5 is lower than the distribution density of heating units 1 in the heating region 4 farther from the center of wafer 5. For further explanation, please refer to [link / reference needed]. Figure 5 The heating region 4 near the center of wafer 5 has a smaller area, so it can only accommodate fewer heating units 1. In this case, the power of the heating units 1 located in this region can be increased to match the surface temperature of wafer 5 in different heating regions 4. Similarly, the heating region 4 far from the center of wafer 5 has a larger area, so it can accommodate more heating units 1. In this case, the power of the heating units 1 located in this region can be reduced to avoid large temperature differences forming inside each heating region 4.
[0048] Please refer to Figures 6 to 7 As an optional embodiment, the heating unit 1 includes a laser tube that emits a laser beam onto the surface of the wafer 5 to heat the wafer 5; the laser emission angle is set at an angle to the plane where the wafer 5 is located. Furthermore, the heating unit 1 is rotatable about its own axis. It should be noted that in this embodiment, the heating unit 1 is rotatable about its own axis; therefore, the distribution position of the heating unit 1 can be adjusted by adjusting the laser emission angle of the heating unit 1, for example, in… Figure 6 In this case, the laser emission angle is perpendicular to the plane where wafer 5 is located. Therefore, heating units 1 need to be evenly arranged on the heating stage 3. Figure 7 In this configuration, the laser emission angle is set at a different angle to the plane where wafer 5 is located. In this case, the heating unit 1 can be concentrated in an area close to or far from the center of wafer 5. As an optional embodiment, when arranging the heating unit 1, the emission angle of a portion of the laser can be set perpendicular to the plane where wafer 5 is located, while the emission angle of another portion of the laser can be set at a different angle to the plane where wafer 5 is located. This allows for free adjustment of the installation position of the heating unit 1, improving the spatial configuration flexibility of the heating stage 3.
[0049] In some other embodiments, the temperature detection unit 2 is rotatable about its own axis to detect the real-time temperature of the wafer 5 surface in different heating areas 4. It should be noted that in this embodiment, the temperature detection unit 2 can be an infrared sensor, which can monitor the real-time temperature changes of the entire wafer 5 surface by rotation, or it can focus on monitoring the real-time temperature changes of a specific portion of the wafer 5 surface, further improving the practical performance of the temperature monitoring module.
[0050] In another embodiment, please refer to Figure 8This utility model also provides a thermal annealing apparatus, including: a cavity 6, a heating stage 3, and a temperature monitoring module as described above; the heating stage 3 is located inside the cavity 6 and is used to support the wafer 5; the temperature detection unit 2 is disposed on the side wall of the cavity 6 and is located above the heating stage 3; during the thermal annealing process performed by the thermal annealing apparatus, the temperature monitoring module detects the real-time temperature of the surface of the wafer 5 in real time, and adjusts the power of one or more heating units 1 according to the real-time temperature.
[0051] With this configuration, by using the temperature monitoring module described above, the temperature change of the wafer 5 surface can be acquired in real time during the hot annealing process in the hot annealing apparatus. Based on the temperature change, the power of one or more heating units 1 can be adjusted, further ensuring the uniformity of the temperature on the wafer 5 surface and improving the product yield.
[0052] In summary, in the temperature monitoring module and thermal annealing device provided in this embodiment of the present invention, the temperature monitoring module includes: multiple heating units disposed on a heating platform for heating a wafer; wherein the heating platform is provided with multiple heating areas, and at least one heating unit is disposed in any heating area; a temperature detection unit disposed above the heating platform for detecting the real-time temperature of the wafer surface located in different heating areas; and a control unit communicatively connected to the temperature detection unit and the heating units for adjusting the power of one or more heating units located in the corresponding heating areas according to the real-time temperature of the wafer surface located in different heating areas obtained by the temperature detection unit.
[0053] This configuration, by placing the temperature detection unit above the heating stage, can acquire the real-time temperature of the wafer surface. Compared with existing technologies that use temperature sensors on the heating stage to detect its temperature, this configuration can reflect real-time temperature changes on the wafer surface, thereby enabling more accurate control of the power of each heating unit to ensure uniform heating of the wafer surface and improve product yield. At the same time, by setting multiple heating zones on the heating stage, the position of the heating unit that needs adjustment can be more accurately located based on the different real-time temperatures of the wafer surface in each heating zone, thus achieving precise temperature control of the wafer surface.
[0054] The above description is only a description of the preferred embodiment of the present utility model and is not intended to limit the scope of the present utility model in any way. Any changes or modifications made by those skilled in the art based on the above disclosure shall fall within the protection scope of the claims.
Claims
1. A temperature monitoring module, characterized in that, include: Multiple heating units are disposed on a heating stage for heating a wafer; wherein the heating stage is provided with multiple heating areas, and at least one heating unit is disposed in any heating area; the heating unit includes a laser tube, which emits a laser beam onto the surface of the wafer to heat the wafer; the emission angle of the laser beam is set at an angle to the plane of the wafer. A temperature detection unit is disposed above the heating stage and is used to detect the real-time temperature of the wafer surface located in different heating areas; The control unit is communicatively connected to the temperature detection unit and the heating unit, and is used to adjust the power of one or more heating units located in the corresponding heating region according to the real-time temperature of the wafer surface located in different heating regions obtained by the temperature detection unit.
2. The temperature monitoring module as described in claim 1, characterized in that, The number of heating units in any of the heating regions may be equal or unequal.
3. The temperature monitoring module as described in claim 1, characterized in that, The heating area is rectangular or annular in shape.
4. The temperature monitoring module as described in claim 3, characterized in that, The heating area is rectangular, and the multiple heating units located in the heating area are arranged in a matrix.
5. The temperature monitoring module as described in claim 3, characterized in that, The heating area is circular, and multiple heating units are evenly arranged within the heating area.
6. The temperature monitoring module as described in claim 5, characterized in that, The distribution density of heating units in the heating region near the center of the wafer is lower than that in the heating region far from the center of the wafer.
7. The temperature monitoring module as described in claim 1, characterized in that, The heating unit is rotatable about its own axis.
8. The temperature monitoring module as described in claim 1, characterized in that, The temperature detection unit is rotatable around its own axis to detect the real-time temperature of the wafer surface in different heating areas.
9. A heat annealing apparatus, characterized in that, include: The cavity, the heating stage, and the temperature monitoring module as described in any one of claims 1 to 8; The heating stage is located inside the cavity and is used to support the wafer; The temperature detection unit is disposed on the side wall of the cavity and located above the heating stage; The temperature monitoring module detects the real-time temperature of the wafer surface during the hot annealing process in the hot annealing apparatus, and adjusts the power of one or more heating units based on the real-time temperature.