IGBT module structure with high heat dissipation efficiency

Abstract

This invention proposes a high-efficiency heat dissipation IGBT module structure, including a thermally conductive and insulating base, comprising an upper metal layer, an insulating layer, and a lower metal layer from top to bottom; a phase change heat spreader, including a sealed upper shell plate and a lower shell plate, with a vacuum cavity between the upper and lower shell plates, containing a liquid wick structure and a phase change working fluid; a liquid cooling plate with internal fluid channels; and an IGBT chip disposed on the circuit structure on the surface of the upper metal layer. The lower metal layer is directly connected to the upper shell plate by welding, and the lower shell plate is in direct contact with the liquid cooling plate. By using the thermally conductive and insulating base as the base for the IGBT chip, replacing the traditional PCB board, the advantages of the thermally conductive and insulating base—its thermal conductivity, resistance to thermal deformation, and ability to be directly welded to the phase change heat spreader—are fully utilized to effectively reduce thermal resistance.

Description

Technical Field

[0001] This utility model relates to the field of heat dissipation technology for electronic devices, specifically to an IGBT module structure with high heat dissipation efficiency, which is suitable for applications with extremely high requirements for power density, reliability and heat dissipation efficiency, such as electric vehicle drive systems, industrial frequency converters, uninterruptible power supplies (UPS), and renewable energy power generation converters. Background Technology

[0002] With the increasing integration of chip technology, power semiconductors are gradually becoming smaller. However, due to the inherent properties of semiconductor materials, the heat generation of power chips continues to increase despite the miniaturization trend, leading to an explosive growth in the heat density of power chips. This is particularly evident in IGBTs.

[0003] Traditional heat dissipation modules, whether heat sink-based or phase-change-free liquid cooling, cannot meet current heat dissipation demands. This is mainly due to two fundamental problems with traditional heat dissipation modules. First, their heat dissipation capacity is insufficient, especially for modules using aluminum heat sinks as the cold source. When faced with the continuous heat generation of high-power chips, the temperature of the heat sink itself tends to become uncontrollable. Therefore, liquid cooling is the inevitable trend for future high-power chip heat dissipation. Second, their heat dissipation efficiency is too low. The high concentration of heat, coupled with various insulating layers, transition layers, low thermal conductivity vapor chambers, and the thermal resistance at the interfaces of each layer, makes it difficult for heat to dissipate to low-power areas, let alone transfer to the heat sink or liquid cooling plate. Therefore, even with the rapid popularization of liquid cooling technology, the various obstacles in the process result in inefficient and ineffective chip heat dissipation.

[0004] Therefore, there is an urgent need to develop a new heat dissipation structure for IGBT modules with lower thermal resistance. Utility Model Content

[0005] To address the shortcomings of existing technologies, this invention proposes a highly efficient heat dissipation IGBT module structure. This structure is compact, has extremely low thermal resistance, and enables rapid and efficient heat dissipation of the IGBT chip. Through innovative multi-level thermal resistance optimization design, particularly the introduction of a phase change heat spreader as a key heat diffusion element and the optimization of its connection with the heat source (IGBT chip) and the final heat sink (liquid cooling plate), the heat dissipation performance is significantly improved.

[0006] The technical solution of this utility model is implemented as follows:

[0007] A high-efficiency heat dissipation IGBT module structure includes:

[0008] The thermally conductive and insulating base comprises, from top to bottom, an upper metal layer, an insulating layer, and a lower metal layer;

[0009] A phase change heat spreader includes a sealed upper shell plate and a lower shell plate, with a vacuum cavity provided between the upper shell plate and the lower shell plate, and a liquid wick structure and a phase change working fluid provided in the vacuum cavity;

[0010] Liquid cooling plate, with internal fluid flow channels;

[0011] IGBT chips are mounted on the circuit structure on the surface of the upper metal layer;

[0012] The lower metal layer is directly connected to the upper shell plate by welding, and the lower shell plate is in direct contact with the liquid cooling plate.

[0013] Preferably, the bottom surface of the lower shell plate is raised to form fins, which extend into the fluid flow channel and directly contact the coolant flowing through the fluid flow channel for heat exchange.

[0014] Preferably, the connection between the lower shell plate and the liquid cooling plate is sealed with a sealing ring, and the phase change heat exchange plate and the liquid cooling plate are fastened with bolts.

[0015] Preferably, the upper metal layer is made of copper;

[0016] The insulating layer is made of ceramic;

[0017] The lower metal layer is made of copper.

[0018] Preferably, the fluid flow channel is a serpentine flow channel, a straight flow channel, or a needle-tooth array flow channel.

[0019] Preferably, the contact gap between the lower shell plate and the liquid cooling plate is filled with silicone grease, and the phase change heat spreader plate and the liquid cooling plate are fastened with bolts.

[0020] Preferably, the lower metal layer is connected to the upper shell plate by diffusion welding, low-temperature brazing or resistance welding.

[0021] Preferably, the length and width dimensions of the phase change heat sink are larger than the length and width dimensions of the IGBT chip, and the thermal conductivity of the phase change heat sink is ≥8000W / (m·K).

[0022] Compared with the prior art, the beneficial effects of this utility model are:

[0023] This IGBT module structure incorporates three layers of thermal resistance reduction to ensure efficient heat dissipation for high-power chips. Firstly, a thermally conductive insulating base serves as the IGBT chip's base, replacing the traditional PCB board. This fully utilizes the thermal conductivity, thermal deformation resistance, and direct welding capability of the thermally conductive insulating base to the phase change heat spreader, eliminating the high contact thermal resistance inherent in traditional interface materials and effectively reducing heat transfer resistance. Secondly, the lower metal layer is directly connected to the upper shell by welding, effectively reducing interface thermal resistance while also lowering the difficulty and cost of the welding process. Thirdly, the lower shell directly contacts the liquid cooling plate, reducing the contact thermal resistance between the phase change heat spreader and the liquid cooling plate – this is the third layer of thermal resistance reduction design. Attached Figure Description

[0024] Figure 1 This is one of the structural schematic diagrams of Embodiment 1 of the present utility model;

[0025] Figure 2 This is the second structural schematic diagram of Embodiment 1 of this utility model;

[0026] Figure 3 This is an exploded structural diagram of Embodiment 2 of the present invention.

[0027] Attached image labels:

[0028] 1-IGBT chip; 2-Insulating shell; 3-Thermal conductive insulating base; 31-Upper metal layer; 32-Insulating layer; 33-Lower metal layer; 4-Circuit structure; 5-Phase change heat spreader; 51-Upper shell plate; 52-Lower shell plate; 6-Liquid cooling plate; 7-Pin; 8-Bolt hole; 9-Fin; 10-Sealing ring. Detailed Implementation

[0029] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present utility model. The specific dimensions, materials, process parameters, etc. given in the embodiments are all exemplary descriptions and are not intended to limit the present utility model. Those skilled in the art can make adjustments according to actual needs.

[0030] Example 1

[0031] See Figure 1 and Figure 2This invention relates to a highly efficient heat dissipation IGBT module structure, the core of which lies in constructing an ultra-low thermal resistance path from the heat source (IGBT chip) to the final heat dissipation medium (coolant). This structure mainly includes the following key components and forms a unique three-stage thermal resistance reduction design, including:

[0032] The thermally conductive and insulating base 3 includes, from top to bottom, an upper metal layer 31, an insulating layer 32, and a lower metal layer 33;

[0033] The phase change heat spreader 5 includes an upper shell plate 51 and a lower shell plate 52 that are sealed together. A vacuum cavity is provided between the upper shell plate 51 and the lower shell plate 52. A liquid wick structure and a phase change working fluid are provided in the vacuum cavity.

[0034] Liquid cooling plate 6, with internal fluid flow channels;

[0035] IGBT chip 1, disposed on circuit structure 4 on surface of upper metal layer 31;

[0036] The lower metal layer 33 is directly connected to the upper shell plate 51 by welding, and the lower shell plate 52 is in direct contact with the liquid cooling plate 6.

[0037] Using the thermally conductive insulating base 3 as the base of the IGBT chip 1, thereby replacing the traditional PCB board, can make full use of the thermal conductivity, thermal deformation resistance and the advantages of being able to be directly welded to the phase change heat spreader 5 of the thermally conductive insulating base. It eliminates the high contact thermal resistance caused by traditional interface materials (such as thermal grease and thermal pads) to effectively reduce the thermal resistance. This is the first thermal resistance reduction design in this patent.

[0038] The lower metal layer 33 is directly connected to the upper shell plate 51 by welding, which can effectively reduce the interface thermal resistance while reducing the welding process difficulty and cost. Specifically, heat is efficiently transferred to the phase change heat dissipation plate 5 through the welding interface. The phase change heat dissipation plate 5 utilizes the rapid phase change cycle of its internal working fluid to diffuse the hot spot heat concentrated under the chip to the entire heat dissipation plate surface with high speed and high equivalent thermal conductivity, especially the area of ​​the lower shell plate 52, achieving excellent thermal uniformity and avoiding local overheating. This is the second thermal resistance reduction design in this patent.

[0039] The lower shell plate 52 is in direct contact with the liquid cooling plate 6, which reduces the contact thermal resistance between the phase change heat dissipation plate 5 and the liquid cooling plate 6. This is the third thermal resistance reduction design in this patent.

[0040] The above three thermal resistance reduction designs form a multi-layered thermal resistance reduction structure for the IGBT module, ensuring efficient heat dissipation for high-power chips.

[0041] It should be noted that the phase change working fluid in the vacuum chamber of the phase change heat spreader 5 can be water, methanol, acetone, ammonia, or other working fluids that can serve as phase change materials. Its internal wicking structure can be made of any other wicking material with capillary function, such as wire mesh or powder. Its working principle is as follows: In the evaporation zone (corresponding to the area below the IGBT chip), the working fluid absorbs heat and evaporates into vapor; the vapor rapidly diffuses throughout the entire chamber (including the condensation zone) under the pressure difference; in the condensation zone (corresponding to the area near the liquid cooling plate), the vapor releases heat to the cooler shell plate and condenses into liquid; the condensate flows back to the evaporation zone under the capillary force of the wicking core, completing a highly efficient phase change heat transfer cycle. This heat transfer method, relying on the latent heat of phase change of the working fluid (far greater than the sensible heat) and high-speed vapor diffusion (approaching the speed of sound), gives the phase change heat spreader ultra-high equivalent thermal conductivity (far higher than solid metal) and excellent thermal uniformity (extremely small temperature difference across the entire surface).

[0042] In addition to carrying the core IGBT chip 1, the circuit structure 4 on the surface of the upper metal layer 31 can also integrate other necessary power devices (such as anti-parallel freewheeling diode FRD), drive and protection circuit elements (such as gate resistor, capacitor, temperature sensor NTC / PTC), current sensor (such as shunt resistor), etc., to form a fully functional power module unit.

[0043] The IGBT module structure also includes an insulating housing 2, typically injection molded from high-performance engineering plastics (such as PPS, PBT+GF). This housing is disposed on the surface of the upper metal layer 31, tightly enclosing all exposed IGBT chips, other electronic components, and high-potential connection points (such as pin 7). Its function is to prevent users or maintenance personnel from accidentally touching high-voltage live parts, avoiding the risk of electric shock, and to protect the delicate internal chips and circuits from external impacts, dust, and moisture intrusion.

[0044] Preferably, the thermally conductive insulating base 3 is made of copper-clad ceramic, wherein the upper metal layer 31 is made of copper, the insulating layer 32 is made of ceramic, and the lower metal layer 33 is made of copper. Using copper-clad ceramic as the connection transition layer between the IGBT chip 1 and the phase change heat spreader 5 is because welding the copper layer to the copper phase change heat spreader 5 is simpler and more stable. That is, the lower metal layer 33 of the thermally conductive insulating base 3 is made of the same material as the upper shell 51 of the phase change heat spreader 5, which is beneficial for welding the thermally conductive insulating base 3 and the phase change heat spreader 5. Furthermore, ceramic has a low coefficient of thermal expansion and high rigidity, and when combined with the copper layer, it can effectively resist thermal deformation and thermal stress at high temperatures, maintaining structural stability and protecting the fragile chip and solder joints. In practice, the upper metal layer 31 and the lower metal layer 33 can be made of other metal materials such as aluminum or iron, and the insulating layer 32 can be made of aluminum nitride, silicon nitride, or other materials with insulating and thermally conductive properties.

[0045] The fluid flow channels in the liquid cooling plate 6 can be serpentine, straight-through, or pin-tooth array channels. The internal fluid flow channel design of the liquid cooling plate 6 needs to be optimized based on heat dissipation power, pressure drop requirements, and space constraints. Serpentine channels balance heat transfer and pressure drop; straight-through channels minimize pressure drop; pin-tooth array channels provide the largest heat transfer area and turbulence, resulting in the highest heat dissipation efficiency. This scheme is preferred in this embodiment. The choice of coolant depends on the application environment temperature, freezing point, boiling point, conductivity, corrosiveness, and other requirements. Water is the most commonly used due to its low cost and high specific heat capacity; ethylene glycol aqueous solutions provide antifreeze protection; in special cases, dielectric coolants (such as fluorinated fluids) or oils can be used.

[0046] Preferably, the contact gap between the lower shell plate 52 and the liquid cooling plate 6 is filled with silicone grease, and the phase change heat spreader 5 and the liquid cooling plate 6 are fastened with bolts. Silicone grease can effectively fill micro-grooves, significantly increasing the effective heat conduction area between the interfaces. Furthermore, the silicone grease has a certain fluidity, allowing it to better adapt to the micro-unevenness and macro-fit tolerances of the two contact surfaces, ensuring more sufficient contact between the lower shell plate 52 and the liquid cooling plate 6. This reduces the temperature drop between the phase change heat spreader 5 and the liquid cooling plate 6, resulting in higher heat dissipation efficiency. The phase change heat spreader 5 and the liquid cooling plate 6 are provided with bolt holes 8. Bolts pass through the bolt holes 8 to fasten the phase change heat spreader 5 and the liquid cooling plate 6. The bolts provide a controllable, uniformly distributed, and durable clamping force, ensuring long-term reliable thermal contact between the phase change heat spreader 5 and the liquid cooling plate 6. They also ensure that the silicone grease is fully compressed and fills the gaps, achieving its optimal thermal conductivity. In addition, the phase change heat spreader 5 and liquid cooling plate 6, which are fastened with bolts, can effectively resist vibration and impact during equipment operation, transportation and installation, and prevent the contact surfaces from separating due to loosening, which would lead to a sharp increase in thermal resistance.

[0047] The lower metal layer 33 is connected to the upper shell plate 51 by diffusion welding, low-temperature brazing or resistance welding.

[0048] Preferably, the length and width dimensions of the phase change heat spreader 5 are larger than those of the IGBT chip 1. A larger area phase change heat spreader 5 than the IGBT chip 1 can reduce heat flux density spikes at the edges of the IGBT chip 1, preventing localized boiling or poor contact in the phase change heat spreader 5 and improving the reliability of interface heat conduction. The thermal conductivity of the phase change heat spreader 5 is set to be greater than or equal to 8000 W / (m·K) because in scenarios such as rapid acceleration of electric vehicles, the IGBT junction temperature can rise sharply in milliseconds. The ultra-high thermal conductivity allows the phase change heat spreader 5 to transfer heat at near-sonic speeds (vapor diffusion speed reaches 100-300 m / s), preventing instantaneous chip burnout.

[0049] The above IGBT module structure is manufactured using the following steps:

[0050] S1: A predetermined circuit pattern is formed on the upper metal layer 31 of the thermally conductive insulating base 3. Specifically, in this embodiment, the thermally conductive insulating base 3 is a copper-clad ceramic. A photosensitive resist film is coated on the upper metal layer 31 and the lower metal layer 33 of the copper-clad ceramic. The predetermined circuit design is then exposed to the upper metal layer 31 through a negative film. The copper layer area to be preserved and the entire lower metal layer 33 are cured. Then, the uncured parts are rinsed off. Next, the thermally conductive insulating base 3 is immersed in an etching solution to chemically etch the uncured copper layer area until the ceramic part of that area is completely exposed to the etching solution. After etching is completed, the cured protective layer is peeled off.

[0051] S2: Assemble the upper shell plate 51, lower shell plate 52, liquid absorption core structure, and thermally conductive insulating base 3 processed in step S1 of the phase change heat spreader 5, wherein the lower metal layer 33 of the thermally conductive insulating base 3 is in close contact with the upper shell plate 51 of the phase change heat spreader 5, and place the assembly into the mold. In this embodiment, a graphite mold is used for mold closing.

[0052] S3: Weld the assembly from step S2 to directly connect the lower metal layer 33 to the upper shell plate 51. Specifically, the graphite mold is placed in a diffusion welding furnace and held at 800°C and 30kg hydraulic pressure for 2 hours, then cooled to below 120°C using in-furnace air cooling to weld the lower metal layer 33 to the upper shell plate 51 together.

[0053] S4: Solder is applied to the predetermined circuit pattern on the surface of the upper metal layer 31 of the thermally conductive insulating base 3, the IGBT chip 1 is mounted to the predetermined position, and soldered by reflow soldering. Specifically, the IGBT chip 1 and other electronic components are arranged according to the predetermined circuit pattern and soldered to the upper metal layer 31, and the pins 7 are soldered to the copper layer of the corresponding area.

[0054] S5: Inject the phase change working fluid into the vacuum chamber of the phase change heat spreader 5, and perform vacuuming and sealing to form a complete phase change heat spreader 5. Specifically, insert a liquid injection tube into the liquid injection port of the phase change heat spreader 5, and weld the liquid injection tube to the phase change heat spreader 5 using high-frequency induction welding. Then, fill the vacuum chamber of the phase change heat spreader 5 with water as the phase change working fluid, place it in a low-temperature freezer to freeze to below -20°C, and then use a vacuum pump to evacuate the inside of the vacuum chamber, reducing the internal gas pressure to below 0.5 Pa to sublimate the phase change working fluid. After cold pressing and sealing, perform secondary degassing to ensure the vacuum level.

[0055] S6: The lower shell plate 52 of the phase change heat spreader 5 is brought into direct contact with the liquid cooling plate 6 and fixed with bolts to form an IGBT module structure. Specifically, the lower shell plate 52 of the phase change heat spreader 5 is tightly attached to the liquid cooling plate 6, a layer of thermally conductive silicone grease is evenly applied to the interface, and finally the phase change heat spreader 5 and the liquid cooling plate 6 are fastened with bolts to form the IGBT module structure.

[0056] The detailed parameters of this IGBT module structure are as follows:

[0057] Table 1: Detailed parameters of IGBT module structure

[0058] Total thickness of the heat spreader (lower shell + upper shell) 3+1.5mm Volume of liquid poured into the vapor chamber (amount of water) 4300ul Thermal conductivity of a vapor chamber (a performance indicator of a vapor chamber) 8000W / (m·k) Copper-clad ceramic length and width 40*32mm Copper-clad ceramic thickness (copper + ceramic + copper) 0.05+0.25+0.05mm IGBT heating power 500W IGBT power density <![CDATA[380W / cm 2 ]]> Liquid cooling plate thickness 15mm Liquid cooling plate flow channel Needle array

[0059] Example 2

[0060] Unlike Example 1, see [link to example]. Figure 3 In this embodiment, the bottom surface of the lower shell plate 52 of the IGBT module structure is raised to form fins 9, which extend into the fluid flow channel and directly contact the coolant flowing through the fluid flow channel for heat exchange. The upper surface of the liquid cooling plate 6 is recessed to form a fluid groove, and the fluid flow channel is arranged in the fluid groove. The fins 9 extend into the fluid flow channel and contact the coolant.

[0061] The fins 9 and the phase change heat spreader 5 are integrally formed. The phase change heat spreader 5 and the coolant inside the liquid cooling plate 6 are in direct contact through the fins 9, which eliminates the contact thermal resistance between the phase change heat spreader 5 and the outer shell of the liquid cooling plate 6, as well as the heat transfer thermal resistance of the outer shell of the liquid cooling plate 6 itself, and further reduces the thermal resistance.

[0062] Preferably, the connection between the lower shell plate 52 and the liquid cooling plate 6 is sealed by a sealing ring 10 to prevent the coolant inside the liquid cooling plate 6 from leaking out. The phase change heat spreader 5 and the liquid cooling plate 6 are fastened with bolts. The phase change heat spreader 5 and the liquid cooling plate 6 are provided with bolt holes 8. The bolts pass through the bolt holes 8 to fasten the phase change heat spreader 5 and the liquid cooling plate 6. The bolts can provide a controllable, uniformly distributed and durable clamping force to ensure long-term reliable thermal contact between the phase change heat spreader 5 and the liquid cooling plate 6.

[0063] The IGBT module structure in this embodiment is manufactured using the following steps:

[0064] S1: A predetermined circuit pattern is formed on the upper metal layer 31 of the thermally conductive insulating base 3. Specifically, in this embodiment, the thermally conductive insulating base 3 is a copper-clad ceramic. A photosensitive resist film is coated on the upper metal layer 31 and the lower metal layer 33 of the copper-clad ceramic. The predetermined circuit design is then exposed to the upper metal layer 31 through a negative film. The copper layer area to be preserved and the entire lower metal layer 33 are cured. Then, the uncured parts are rinsed off. Next, the thermally conductive insulating base 3 is immersed in an etching solution to chemically etch the uncured copper layer area until the ceramic part of that area is completely exposed to the etching solution. After etching is completed, the cured protective layer is peeled off.

[0065] S2: Assemble the upper shell plate 51, lower shell plate 52, liquid absorption core structure, and thermally conductive insulating base 3 processed in step S1 of the phase change heat spreader 5, wherein the lower metal layer 33 of the thermally conductive insulating base 3 is in close contact with the upper shell plate 51 of the phase change heat spreader 5, and place the assembly into the mold. In this embodiment, a graphite mold is used for mold closing.

[0066] S3: Weld the assembly from step S2 to directly connect the lower metal layer 33 to the upper shell plate 51. Specifically, the graphite mold is placed in a diffusion welding furnace and held at 800°C and 30kg hydraulic pressure for 2 hours, then cooled to below 120°C using in-furnace air cooling to weld the lower metal layer 33 to the upper shell plate 51 together.

[0067] S4: Solder is applied to the predetermined circuit pattern on the surface of the upper metal layer 31 of the thermally conductive insulating base 3, the IGBT chip 1 is mounted to the predetermined position, and soldered by reflow soldering. Specifically, the IGBT chip 1 and other electronic components are arranged according to the predetermined circuit pattern and soldered to the upper metal layer 31, and the pins 7 are soldered to the copper layer of the corresponding area.

[0068] S5: Inject the phase change working fluid into the vacuum chamber of the phase change heat spreader 5, and perform vacuuming and sealing to form a complete phase change heat spreader 5. Specifically, insert a liquid injection tube into the liquid injection port of the phase change heat spreader 5, and weld the liquid injection tube to the phase change heat spreader 5 using high-frequency induction welding. Then, fill the vacuum chamber of the phase change heat spreader 5 with water as the phase change working fluid, place it in a low-temperature freezer to freeze to below -20°C, and then use a vacuum pump to evacuate the inside of the vacuum chamber, reducing the internal gas pressure to below 0.5 Pa to sublimate the phase change working fluid. After cold pressing and sealing, perform secondary degassing to ensure the vacuum level.

[0069] S6: The lower shell plate 52 of the phase change heat spreader 5 is brought into direct contact with the liquid cooling plate 6 and fixed with bolts to form an IGBT module structure. Specifically, the lower shell plate 52 of the phase change heat spreader 5 is tightly fitted with the liquid cooling plate 6, so that the fins 9 extend into the fluid flow channel, and the phase change heat spreader 5 and the liquid cooling plate 6 are fastened with bolts to finally form the IGBT module structure.

[0070] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. An IGBT module structure with high heat dissipation, characterized in that, include: The thermally conductive and insulating base comprises, from top to bottom, an upper metal layer, an insulating layer, and a lower metal layer; A phase change heat spreader includes an upper shell plate and a lower shell plate that are sealed together. A vacuum cavity is provided between the upper shell plate and the lower shell plate. A liquid wick structure and a phase change working fluid are provided in the vacuum cavity. Liquid cooling plate, with internal fluid flow channels; The IGBT chip is disposed on the circuit structure on the surface of the upper metal layer; The lower metal layer is directly connected to the upper shell plate by welding, and the lower shell plate is in direct contact with the liquid cooling plate.

2. The high-efficiency heat dissipation IGBT module structure according to claim 1, characterized in that, The bottom surface of the lower shell plate protrudes to form fins, which extend into the fluid flow channel and directly contact the coolant flowing through the fluid flow channel for heat exchange.

3. The high-efficiency heat dissipation IGBT module structure according to claim 2, characterized in that, The connection between the lower shell plate and the liquid cooling plate is sealed by a sealing ring, and the phase change heat spreader plate is fastened to the liquid cooling plate by bolts.

4. The high-efficiency heat dissipation IGBT module structure according to claim 1, characterized in that, The upper metal layer is made of copper; The insulating layer is made of ceramic; The lower metal layer is made of copper.

5. The high-efficiency heat dissipation IGBT module structure according to claim 1, characterized in that, The fluid flow channel is a serpentine flow channel, a straight flow channel, or a needle-tooth array flow channel.

6. The high-efficiency heat dissipation IGBT module structure according to claim 1, characterized in that, The contact gap between the lower shell plate and the liquid cooling plate is filled with silicone grease, and the phase change heat spreader plate is fastened to the liquid cooling plate with bolts.

7. The high-efficiency heat dissipation IGBT module structure according to claim 1, characterized in that, The lower metal layer is connected to the upper shell plate by diffusion welding, low-temperature brazing or resistance welding.

8. The high-efficiency heat dissipation IGBT module structure according to claim 1, characterized in that, The phase change heat spreader has a length and width dimension larger than that of the IGBT chip, and the thermal conductivity of the phase change heat spreader is ≥8000W / (m·K).

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