Ceramic-based liquid flow channel heat sinks, AMB substrates, and semiconductor components

Abstract

This application discloses a ceramic-based liquid flow channel heat sink, an AMB substrate, and a semiconductor device. The ceramic-based liquid flow channel heat sink includes a ceramic substrate with a first surface and a second surface disposed opposite to each other. A fluid inlet and a fluid outlet are formed on either the first or second surface of the ceramic substrate. A heat dissipation channel for liquid or gas passage is formed inside the ceramic substrate, communicating with the fluid inlet and outlet. The thickness of the ceramic substrate is 0.1 mm to 5 mm. This application uses a ceramic substrate with a heat dissipation channel structure to fabricate an AMB substrate for use in semiconductor devices. This shortens the heat dissipation process of the semiconductor device. Heat from the semiconductor device diffuses from the metal foil on the AMB substrate to the ceramic substrate and is then carried away by the liquid or gas within the heat dissipation channel, improving the heat dissipation efficiency of the semiconductor device, ensuring stable and continuous operation, and extending the lifespan of the semiconductor device.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a ceramic-based liquid flow channel heat sink, an AMB substrate, and a semiconductor device. Background Technology

[0002] With the development of semiconductor technology, the size of semiconductor devices is getting smaller and smaller, while the power of the devices is getting higher and higher. This makes the heat dissipation requirements of semiconductor devices increasingly higher in order to ensure the stable operation and long-term operation of semiconductor devices.

[0003] In traditional semiconductor technology, the chip is soldered onto an AMB (Active Metal Brazing) substrate, while heat sink fins are soldered to the other side of the AMB substrate. Heat generated during chip operation is transferred through the solder layer to the copper foil of the AMB substrate. The heat from the copper foil then diffuses to the ceramic substrate, and the heat from the ceramic substrate is transferred to the copper foil on the other side of the AMB substrate. Finally, the heat from the copper foil is transferred to the heat sink fins, where it is carried away by flowing air, thus achieving heat dissipation. Although traditional technology has gradually adopted ceramic substrates made of high thermal conductivity ceramic materials, the thermal conductivity of the ceramic substrate is still much lower than that of the copper foil. Furthermore, the method of transferring heat to the air via the heat sink fins also suffers from low heat transfer efficiency. Therefore, the heat transfer effect and heat dissipation performance of semiconductor devices in traditional technology are poor. Since the ceramic substrate is an irreplaceable insulating material in the module, and to ensure the structural strength of the semiconductor device, it is difficult to make the ceramic substrate very thin; a thicker ceramic substrate would negatively impact the heat dissipation performance of the semiconductor device. Utility Model Content

[0004] Therefore, it is necessary to provide a ceramic-based liquid flow channel radiator with good heat dissipation performance, which can ensure stable output and improve service life.

[0005] One embodiment of this application provides a ceramic-based liquid flow channel radiator.

[0006] A ceramic-based liquid flow channel heat sink includes a ceramic substrate. The ceramic substrate includes a first surface and a second surface disposed opposite to each other. A fluid inlet and a fluid outlet are provided on the first surface or the second surface of the ceramic substrate. A heat dissipation channel for liquid or gas to pass through is provided inside the ceramic substrate. The heat dissipation channel communicates with the fluid inlet and the fluid outlet. The thickness of the ceramic substrate is 0.1 mm to 5 mm.

[0007] In some embodiments, the ceramic substrate is an alumina substrate, an aluminum nitride substrate, a ZTA (Zirconia Toughened Alumina) substrate, or a silicon nitride substrate.

[0008] In some embodiments, the thickness of the ceramic substrate is 0.2 mm to 4 mm.

[0009] In some embodiments, the ceramic substrate has a thickness of 0.32 mm.

[0010] In some embodiments, the fluid inlet and the fluid outlet are spaced apart.

[0011] In some embodiments, the diameter of the fluid inlet and the diameter of the fluid outlet are each independently 0.1 mm to 5 mm.

[0012] In some embodiments, the distance between the fluid inlet and the edge of the ceramic substrate, and the distance between the fluid outlet and the edge of the ceramic substrate, are each independently 1 / 10 to 1 / 2 of the length of the ceramic substrate.

[0013] In some embodiments, the distance between the fluid inlet and the edge of the ceramic substrate, and the distance between the fluid outlet and the edge of the ceramic substrate, are each independently 1 / 4 of the length of the ceramic substrate.

[0014] In some embodiments, both the fluid inlet and the fluid outlet are located on the first surface.

[0015] In some embodiments, the heat dissipation channel is a single channel, the heat dissipation channel is curved and meandering, and the two ends of the heat dissipation channel are respectively connected to the fluid inlet and the fluid outlet.

[0016] In some embodiments, the heat dissipation channel includes a plurality of heat dissipation sub-channels that are interconnected, one of which communicates with the fluid inlet and another with the fluid outlet.

[0017] In some embodiments, the depth of the heat dissipation channel is 1 / 3 to 2 / 3 of the thickness of the ceramic substrate.

[0018] In some embodiments, the width of the heat dissipation channel is 0.03 mm to 5 mm.

[0019] One embodiment of this application also provides an AMB substrate.

[0020] An AMB substrate includes a metal foil and a ceramic-based liquid flow channel heat sink as described in any of the above embodiments. The first surface and the second surface of the ceramic substrate are respectively connected to the metal foil. The metal foil is provided with clearance holes at positions corresponding to the fluid inlet and the fluid outlet. The metal foil away from the fluid inlet and the fluid outlet is etched with patterned channels.

[0021] In some embodiments, the metal foil includes copper foil.

[0022] In some embodiments, the thickness of the metal foil is 0.1 mm to 3 mm.

[0023] One embodiment of this application also provides a semiconductor element.

[0024] A semiconductor device includes a chip and an AMB substrate as described in any of the above embodiments. The chip is connected to a metal foil that is away from the fluid inlet and the fluid outlet. The chip is connected to the corresponding metal foil through bonding wires and conductive strips to form a circuit structure.

[0025] In some embodiments, the chip is connected to the corresponding metal foil via a solder layer.

[0026] In some embodiments, the conductive strip is independently connected to the chip and the corresponding metal foil via a solder layer.

[0027] In some embodiments, the conductive strip comprises a copper strip.

[0028] The aforementioned ceramic-based liquid flow channel heat sink features fluid inlet and outlet ports on a ceramic substrate. Low-temperature liquid or gas is introduced through the fluid inlet and outlet ports to dissipate heat from the ceramic substrate. Simultaneously, the thickness of the ceramic substrate is reduced to 0.1mm~5mm. When an AMB substrate with a heat dissipation flow channel structure is used to fabricate a ceramic substrate for semiconductor devices, the heat dissipation process of the semiconductor device can be shortened. After the heat from the semiconductor device diffuses from the metal foil, such as copper foil, on the AMB substrate to the ceramic substrate, it is directly carried away by the liquid or gas in the heat dissipation flow channel. This greatly increases the heat dissipation efficiency of the semiconductor device, improves its stable and continuous operation capability, and extends its service life.

[0029] The ceramic-based liquid flow channel heat sink of this application can solve the problems of multiple interface connections, high interface thermal resistance, and large module package size and weight in the existing traditional technology of semiconductor device packaging. It can realize the miniaturization and weight reduction of semiconductor device modules. The fluid inlet and fluid outlet of the microchannel of the ceramic substrate used in the heat dissipation flow channel structure are respectively on the surface of the ceramic substrate. Therefore, the entire ceramic substrate can be made very thin, with a thickness of 0.1mm to 5mm, realizing the miniaturization of the entire semiconductor device. Attached Figure Description

[0030] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0031] To gain a more complete understanding of this application and its beneficial effects, the following description will be provided in conjunction with the accompanying drawings. In the following description, the same reference numerals denote the same parts.

[0032] Figure 1 This is a schematic diagram of a ceramic-based liquid flow channel heat sink according to an embodiment of this application;

[0033] Figure 2 This is a schematic diagram of a single-channel heat dissipation channel structure for a ceramic-based liquid flow channel radiator according to an embodiment of this application.

[0034] Figure 3 This is a schematic diagram of a single-channel structure for the heat dissipation channel of the ceramic-based liquid flow channel radiator described in another embodiment of this application;

[0035] Figure 4 This is a schematic diagram of the heat dissipation channel structure of a ceramic-based liquid flow channel radiator according to an embodiment of this application, which consists of multiple heat dissipation sub-channels;

[0036] Figure 5 This is a schematic diagram of the heat dissipation channel structure of a ceramic-based liquid flow channel radiator according to another embodiment of the present application, which consists of multiple heat dissipation sub-channels;

[0037] Figure 6 This is a schematic cross-sectional view of a semiconductor device structure according to an embodiment of this application.

[0038] Explanation of reference numerals in the attached figures

[0039] 10. Semiconductor element structure; 100. Chip; 200. AMB substrate; 210. Metal foil; 211. Clearance hole; 212. Patterned channel; 220. Ceramic-based liquid flow channel heat sink; 221. Ceramic substrate; 2201. First surface; 2202. Second surface; 2211. Fluid inlet; 2212. Fluid outlet; 2213. Heat dissipation channel; 2214. Heat dissipation sub-channel; 300. Solder layer; 400. Conductive strip; 500. Bonding wire. Detailed Implementation

[0040] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0041] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0042] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0043] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0044] In the description of this application, "several" means one or more, "multiple" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. The use of "first" and "second" in the description is merely for distinguishing technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of indicated technical features, or implicitly indicating the order of the indicated technical features.

[0045] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0046] In this document, "optionally," "optionally," and "optional" mean that something is optional, that is, it is selected from either "with" or "without." If multiple "options" appear in a technical solution, unless otherwise specified and there are no contradictions or mutual constraints, each "option" is independent. In this application, descriptions such as "optionally contains" and "optionally includes" indicate "contains or does not contain."

[0047] In this application, when numerical intervals (i.e., numerical ranges) are mentioned, unless otherwise specified, the distribution of selectable numerical values ​​within the numerical interval is considered continuous, and includes the two endpoints of the numerical interval (i.e., the minimum and maximum values), as well as every numerical value between these two endpoints. Unless otherwise specified, when a numerical interval refers only to integers within that numerical interval, it includes the two endpoint integers of the numerical range, as well as every integer between the two endpoints, which is equivalent to directly listing every integer. When multiple numerical ranges are provided to describe features or characteristics, these numerical ranges can be merged. In other words, unless otherwise specified, the numerical ranges disclosed in this application should be understood to include any and all subranges included therein. The "numerical value" in the numerical interval can be any quantitative value, such as a number, percentage, ratio, etc. The term "numerical interval" can be broadly included to include percentage intervals, ratio intervals, proportion intervals, etc.

[0048] One embodiment of this application provides a ceramic-based liquid flow channel heat sink to solve at least one of the following technical problems of semiconductor devices in the conventional technology: (1) The thermal conductivity of the ceramic substrate is much lower than that of the copper foil. In order to ensure the structural strength of the semiconductor device, it is also difficult to make the ceramic substrate very thin. Therefore, the ceramic substrate in the conventional technology affects the heat dissipation performance of the semiconductor device. (2) The conventional semiconductor device has a problem of low heat transfer efficiency in the way heat is transferred to the air by heat dissipation fins. The ceramic-based liquid flow channel heat sink will be described below with reference to the accompanying drawings.

[0049] The ceramic-based liquid flow channel radiator 220 provided in one embodiment of this application is exemplary; please refer to [link to example]. Figure 1 As shown, Figure 1 This is a schematic diagram of the structure of a ceramic-based liquid flow channel heat sink 220 provided in one embodiment of this application. The ceramic-based liquid flow channel heat sink 220 of this application can be used to fabricate semiconductor devices, improve the heat dissipation performance and stability of semiconductor devices, and extend the service life of semiconductor devices.

[0050] To more clearly illustrate the structure of the ceramic-based liquid flow channel radiator 220, the following description of the ceramic-based liquid flow channel radiator 220 will be provided in conjunction with the accompanying drawings.

[0051] For example, please refer to Figure 1 As shown, a ceramic-based liquid flow channel heat sink 220 includes a ceramic substrate 221, which has a first surface 2201 and a second surface 2202 disposed opposite to each other. A fluid inlet 2211 and a fluid outlet 2212 are provided on either the first surface 2201 or the second surface 2202 of the ceramic substrate 221. A heat dissipation channel 2213 for allowing liquid or gas to pass through is provided inside the ceramic substrate 221. The heat dissipation channel 2213 communicates with the fluid inlet 2211 and the fluid outlet 2212. The thickness of the ceramic substrate 221 is 0.1 mm to 5 mm.

[0052] The aforementioned ceramic-based liquid flow channel heat sink 220 has a fluid inlet 2211 and a fluid outlet 2212 on a ceramic substrate 221. Low-temperature liquid or gas is introduced through the fluid inlet 2211 and the fluid outlet 2212 to dissipate heat from the ceramic substrate 221. At the same time, the thickness of the ceramic substrate 221 is reduced to 0.1mm~5mm. The ceramic substrate 221 with the heat dissipation flow channel 2213 structure is used to fabricate an AMB substrate 200 for semiconductor devices. This can shorten the heat dissipation process of the semiconductor device. The heat of the semiconductor device diffuses from the metal foil 210 (such as copper foil) on the AMB base to the ceramic substrate 221 and is directly carried away by the liquid or gas in the heat dissipation flow channel 2213. This greatly increases the heat dissipation efficiency of the semiconductor device, improves the stable and continuous operation capability of the semiconductor device, and also increases the service life of the semiconductor device.

[0053] In some implementations, see Figure 1 As shown, fluid inlet 2211 and fluid outlet 2212 are located on the first surface 2201. The second surface 2202 is used to connect the metal foil 210 and the chip 100.

[0054] In some embodiments, the ceramic substrate 221 is an alumina substrate, an aluminum nitride substrate, a ZTA (Zirconia Toughened Alumina) substrate, or a silicon nitride substrate.

[0055] For example, the thickness of the ceramic substrate 221 may be, but is not limited to, 0.1 mm, 0.2 mm, 0.3 mm, 0.4 mm, 0.5 mm, or any combination thereof.

[0056] In some embodiments, the thickness of the ceramic substrate 221 is 0.2 mm to 4 mm.

[0057] In some embodiments, the ceramic substrate 221 has a thickness of 0.32 mm.

[0058] In some embodiments, fluid inlet 2211 and fluid outlet 2212 are spaced apart.

[0059] In some embodiments, the diameter of the fluid inlet 2211 and the diameter of the fluid outlet 2212 are each independently between 0.1 mm and 5 mm. For example, the diameter of the fluid inlet 2211 may be, but is not limited to, 0.1 mm, 0.2 mm, 0.5 mm, 0.8 mm, 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, or any range between the two aforementioned. Similarly, the diameter of the fluid outlet 2212 may be, but is not limited to, 0.1 mm, 0.2 mm, 0.5 mm, 0.8 mm, 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, or any range between the two aforementioned.

[0060] In some embodiments, the distance between the fluid inlet 2211 and the edge of the ceramic substrate 221, and the distance between the fluid outlet 2212 and the edge of the ceramic substrate 221, are each independently 1 / 10 to 1 / 2 of the length of the ceramic substrate 221.

[0061] In some embodiments, the distance between the fluid inlet 2211 and the edge of the ceramic substrate 221, and the distance between the fluid outlet 2212 and the edge of the ceramic substrate 221, are each independently 1 / 4 of the length of the ceramic substrate 221.

[0062] In some embodiments, both the fluid inlet 2211 and the fluid outlet 2212 are located on the first surface 2201.

[0063] In some implementations, see Figure 2 , Figure 3 As shown, Figure 2 This is a schematic diagram of a single-channel structure for the heat dissipation channel 2213 of the ceramic-based liquid flow channel radiator 220 according to one embodiment of this application. Figure 3 The schematic diagram of the heat dissipation channel 2213 of the ceramic-based liquid flow channel radiator 220, which is another embodiment of this application, is a single flow channel structure. The heat dissipation channel 2213 is a single flow channel, and the heat dissipation channel 2213 is curved and meandering. The two ends of the heat dissipation channel 2213 are respectively connected to the fluid inlet hole 2211 and the fluid outlet hole 2212.

[0064] In some implementations, see Figure 4 , Figure 5 As shown, Figure 4 This is a schematic diagram of the structure of a ceramic-based liquid flow channel radiator 220 according to an embodiment of this application, in which the heat dissipation flow channel 2213 is divided into multiple heat dissipation sub-flow channels 2214. Figure 5 The heat dissipation channel 2213 of the ceramic-based liquid flow channel radiator 220, which is another embodiment of this application, is a schematic diagram of a structure of multiple heat dissipation sub-channels 2214. The heat dissipation channel 2213 includes multiple heat dissipation sub-channels 2214, which are interconnected and interleaved. One of the heat dissipation sub-channels 2214 is connected to the fluid inlet 2211, and another of the heat dissipation sub-channels 2214 is connected to the fluid outlet 2212.

[0065] In some embodiments, the depth of the heat dissipation channel 2213 is 1 / 3 to 2 / 3 of the thickness of the ceramic substrate 221.

[0066] In some embodiments, the width of the heat dissipation channel 2213 is 0.03 mm to 5 mm. For example, the width of the heat dissipation channel 2213 may include, but is not limited to, 0.03 mm, 0.05 mm, 0.1 mm, 0.2 mm, 0.5 mm, 0.8 mm, 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, or any range between the two aforementioned.

[0067] One embodiment of this application also provides an AMB substrate 200.

[0068] An AMB substrate 200, see [link / reference] Figure 6 As shown, Figure 6This is a cross-sectional schematic diagram of a semiconductor device structure 10 according to an embodiment of the present application, including a metal foil 210 and a ceramic-based liquid flow channel heat sink 220 in any of the above embodiments. The first surface 2201 and the second surface 2202 of the ceramic substrate 221 are respectively connected to the metal foil 210. The metal foil 210 is provided with clearance holes 211 at positions corresponding to the fluid inlet hole 2211 and the fluid outlet hole 2212. The metal foil 210 away from the fluid inlet hole 2211 and the fluid outlet hole 2212 is etched with patterned channels 212.

[0069] In some embodiments, the metal foil 210 includes a copper foil.

[0070] In some embodiments, the thickness of the metal foil 210 is 0.1 mm to 3 mm. For example, the thickness of the metal foil 210 may include, but is not limited to, 0.1 mm, 0.2 mm, 0.5 mm, 0.8 mm, 1 mm, 2 mm, 3 mm, or any range between the two aforementioned.

[0071] One embodiment of this application also provides a semiconductor element.

[0072] A semiconductor device, see Figure 6 As shown, Figure 6 This is a cross-sectional schematic diagram of a semiconductor device structure 10 according to an embodiment of this application, including a chip 100 and an AMB substrate 200 as described in any of the above embodiments. The chip 100 is connected to a metal foil 210 facing away from the fluid inlet 2211 and fluid outlet 2212. The chip 100 is connected to the corresponding metal foil 210 through bonding wires 500 and conductive strips 400 to form a circuit structure.

[0073] In some embodiments, the chip 100 is connected to the corresponding metal foil 210 via a solder layer 300.

[0074] In some embodiments, the conductive strip 400 is independently connected to the chip 100 and the corresponding metal foil 210 via a solder layer 300.

[0075] In some embodiments, the conductive strip 400 comprises a copper strip.

[0076] In some embodiments, chip 100 includes logic chips, memory chips, analog chips, microcontrollers, or sensor chips. For example, in one specific embodiment, AMB substrate 200 serves as a packaging unit for chip 100, forming a packaging module.

[0077] In summary, the ceramic-based liquid flow channel heat sink 220 of this application can solve the problems of multiple interface connections, high interface thermal resistance, and large module package size and weight in the existing traditional technology of semiconductor device packaging, and realize the miniaturization and weight reduction of semiconductor device modules. The fluid inlet 2211 and the fluid outlet 2212 of the microchannel of the ceramic substrate 221 structure used for heat dissipation flow channel 2213 are respectively on the surface of the ceramic substrate. Therefore, the entire ceramic substrate 221 can be made very thin, with a thickness of 0.1mm to 5mm, realizing the miniaturization of the entire semiconductor device.

[0078] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0079] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0080] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A ceramic-based liquid flow channel heat sink, characterized by, The invention includes a ceramic substrate, which has a first surface and a second surface disposed opposite to each other. A fluid inlet and a fluid outlet are provided on the first surface or the second surface of the ceramic substrate. A heat dissipation channel for allowing liquid or gas to pass through is provided inside the ceramic substrate. The heat dissipation channel communicates with the fluid inlet and the fluid outlet. The thickness of the ceramic substrate is 0.1 mm to 5 mm. The depth of the heat dissipation channel is 1 / 3 to 2 / 3 of the thickness of the ceramic substrate. The width of the heat dissipation channel is 0.03 mm to 5 mm.

2. The ceramic-based liquid flow channel heat sink of claim 1, wherein, The ceramic substrate is an alumina substrate, an aluminum nitride substrate, a ZTA substrate, or a silicon nitride substrate.

3. The ceramic-based liquid flow channel heat sink of claim 1, wherein, The thickness of the ceramic substrate is 0.2mm to 4mm.

4. The ceramic-based liquid flow channel heat sink of claim 1, wherein, The thickness of the ceramic substrate is 0.32 mm.

5. The ceramic-based liquid flow channel heat sink of claim 1, wherein, The ceramic-based liquid flow channel radiator also satisfies at least one of the following conditions: (1) The fluid inlet and the fluid outlet are spaced apart; (2) The diameter of the fluid inlet and the diameter of the fluid outlet are each independently 0.1 mm to 5 mm; (3) The distance between the fluid inlet and the edge of the ceramic substrate and the distance between the fluid outlet and the edge of the ceramic substrate are each independently 1 / 10 to 1 / 2 of the length of the ceramic substrate; (4) Both the fluid inlet and the fluid outlet are located on the first surface.

6. The ceramic-based liquid flow channel heat sink of claim 5, wherein, The distance between the fluid inlet and the edge of the ceramic substrate, and the distance between the fluid outlet and the edge of the ceramic substrate, are each independently 1 / 4 of the length of the ceramic substrate.

7. The ceramic-based liquid flow channel heat sink of claim 1, wherein, The heat dissipation channel is a single channel, and the heat dissipation channel is curved and meandering. The two ends of the heat dissipation channel are respectively connected to the fluid inlet and the fluid outlet. Alternatively, the heat dissipation channel may include multiple heat dissipation sub-channels, which are interconnected and interwoven, with one of the heat dissipation sub-channels communicating with the fluid inlet and another communicating with the fluid outlet.

8. An AMB substrate, characterized by, The invention includes a metal foil and a ceramic-based liquid flow channel heat sink as described in any one of claims 1 to 7, wherein the first surface and the second surface of the ceramic substrate are respectively connected to the metal foil, and the metal foil is provided with clearance holes at positions corresponding to the fluid inlet and the fluid outlet, and the metal foil away from the fluid inlet and the fluid outlet is etched with patterned channels.

9. The AMB substrate of claim 8, wherein, The AMB substrate also satisfies at least one of the following conditions: (1) The metal foil includes copper foil; (2) The thickness of the metal foil is 0.1mm~3mm.

10. A semiconductor element characterized by comprising: The device includes a chip and the AMB substrate as described in claim 8 or 9, wherein the chip is connected to the metal foil opposite to the fluid inlet and the fluid outlet, and the chip is connected to the corresponding metal foil via bonding wires and conductive strips to form a circuit structure.

11. The semiconductor device according to claim 10, wherein The semiconductor element also satisfies at least one of the following conditions: (1) The chip and the corresponding metal foil are connected by a solder layer; (2) The conductive strip is independently connected to the chip and the corresponding metal foil through a solder layer; (3) The conductive strip includes a copper strip.

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