Optoelectronic hybrid redistribution structure

Abstract

This application proposes a hybrid optoelectronic redistribution structure, comprising: electronic components including optical pads and electrical pads; a light-guiding material disposed above the optical pads; and a top conductive material disposed above and in contact with the light-guiding material, serving as a reflective interface for the light-guiding material. This overlapping arrangement of the light-guiding and conductive materials shortens the optoelectronic interconnection distance, leveraging the advantages of high optical transmission speed and low power consumption to improve signal transmission efficiency. The redistribution structure also provides more I / O interfaces. Furthermore, it facilitates product miniaturization, enabling diverse performance designs with a simple structure and low cost.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor packaging technology, and specifically to an optoelectronic hybrid redistribution structure. Background Technology

[0002] In optoelectronic hybrid rewiring connection structures, long-distance signal transmission typically uses optical paths, while short-distance transmission uses electrical paths.

[0003] Optical pads and electrical solder pads in circuit structures are usually designed in sections, such as... Figure 1 As shown in the figure, this is a top view of a prior art optoelectronic hybrid redistribution structure. Electrical pads 01 and optical pads 02 are respectively disposed on the left and right sides of the circuit board 10. In this case, there is a long transmission distance between the outermost electrical pads 01 and optical pads 02, resulting in low optoelectronic transmission efficiency. Utility Model Content

[0004] This application proposes a hybrid optoelectronic rewiring structure.

[0005] In a first aspect, this application provides an optoelectronic hybrid redistribution structure, including:

[0006] Electronic components, including optical pads and electrical pads;

[0007] An optical guiding material is disposed above the optical pad;

[0008] A top conductive material is disposed above and in contact with the light-conducting material, and the top conductive material serves as the reflective interface of the light-conducting material.

[0009] In one possible implementation, the optical pads are disposed between the electrical pads.

[0010] In one possible implementation, the projection of the top conductive material in the vertical direction completely covers the projection of the optical pad in the vertical direction.

[0011] In one possible implementation, the light-guiding material includes a protruding portion that is connected to the optical pad.

[0012] In one possible implementation, the top conductive material is provided with a first groove, the sidewall of the first groove tapering along a first direction, the first direction extending from the top conductive material toward the electronic component.

[0013] As one possible implementation, the projection of the protruding portion in the vertical direction completely covers the projection of the tapered starting point on one side of the first groove in the vertical direction.

[0014] As one possible implementation, the thickness of the light-conducting material is greater than that of the top conductive material.

[0015] As one possible implementation, the optoelectronic hybrid redistribution structure further includes:

[0016] A dielectric material is disposed between the electronic component and the photoconductive material to separate the optical pad and the electrical pad.

[0017] In one possible implementation, the dielectric material is provided with a second groove, which is filled by the protruding portion, and the second groove tapers along the first direction.

[0018] As one possible implementation, the optoelectronic hybrid redistribution structure further includes:

[0019] A central conductive material is disposed between the dielectric material and the optical guide material, serving as another reflective interface of the optical guide material.

[0020] In one possible implementation, the central conductive material is provided with a third groove, which is electrically connected to the electrical pad.

[0021] In one possible implementation, the third groove is electrically connected to the top conductive material.

[0022] In one possible implementation, the third groove is filled by the protruding portion.

[0023] As one possible implementation, a portion of the first groove is in contact with the dielectric material.

[0024] In one possible implementation, the optical guide material is divided into a first part and a second part by the first groove, the first part fills the second groove, and the second part fills the third groove.

[0025] In one possible implementation, the light-conducting material includes a first light-conducting material and a second light-conducting material, which are separated by a spacer conductive material. The spacer conductive material is provided with a fifth groove, the first light-conducting material fills the fifth groove, and the second light-conducting material fills the second groove and the third groove.

[0026] In one possible implementation, the top conductive material includes a seed layer and a metal layer, with the metal layer disposed above the seed layer.

[0027] As one possible implementation, the light-guiding material is polyimide, polyethylene, polymethyl methacrylate, and / or glass-reinforced epoxy resin.

[0028] As one possible implementation, the top conductive material is copper, gold, silver, aluminum, palladium, platinum, nickel, and / or their alloys.

[0029] As one possible implementation, the dielectric material is polyimide, epoxy resin, polypropylene, and / or acrylic.

[0030] To improve signal transmission efficiency, this application proposes a hybrid optoelectronic redistribution structure, including electronic components such as optical pads and electrical pads; a photoconductive material disposed above the optical pads; and a top conductive material disposed above and in contact with the photoconductive material, serving as a reflective interface for the photoconductive material. This overlapping arrangement of the photoconductive and conductive materials shortens the optoelectronic interconnection distance, leveraging the advantages of high optical transmission speed and low power consumption to improve signal transmission efficiency. The redistribution structure also provides more I / O interfaces. Furthermore, it facilitates product miniaturization, enabling diverse performance designs with a simple structure and low cost. Attached Figure Description

[0031] Other features, objects, and advantages of this invention will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings:

[0032] Figure 1 This is a top view schematic diagram of an existing optoelectronic hybrid redistribution structure;

[0033] Figure 2 This is a top view schematic diagram of an optoelectronic hybrid rewiring structure according to an embodiment of the present invention;

[0034] Figure 3 This is a front view and a partially enlarged view of an optoelectronic hybrid rewiring structure 100 according to an embodiment of the present invention;

[0035] Figure 4 This is a top view and a cross-sectional view along AA' of a partial optoelectronic hybrid rewiring structure 100 according to an embodiment of the present invention.

[0036] Figure 5 This is a dimensional diagram of an optoelectronic hybrid rewiring structure 100 according to an embodiment of the present invention;

[0037] Figure 6 This is a schematic diagram of the optoelectronic hybrid rewiring structure 200 according to an embodiment of the present invention;

[0038] Figure 7 This is a schematic diagram of an optoelectronic hybrid rewiring structure 300 according to an embodiment of the present invention;

[0039] Figure 8 This is a schematic diagram of an optoelectronic hybrid rewiring structure 400 according to an embodiment of the present invention;

[0040] Figure 9 This is a schematic diagram of an optoelectronic hybrid rewiring structure 500 according to an embodiment of the present invention;

[0041] Figures 10-20 This is a schematic diagram of the optoelectronic hybrid rewiring structure 100 at various manufacturing stages according to an embodiment of the present invention.

[0042] Explanation of reference numerals / symbols in the attached diagram:

[0043] 10-Circuit board; 01-Electrical pad; 02-Optical pad; 101-Electrical pad; 102-Optical pad; 103-Optical guide material; 1031-Optical path; 1032-Protruding part; 1033-First optical guide material; 1034-Second optical guide material; 1035-Spacer conductive material; 10351-Fifth groove; 1036-First part; 1037-Second part; 104-Top conductive material; 1041-First groove; 1042-Seed layer; 1043-Metal layer; 105-Dielectric material; 1051-Second groove; 106-Middle conductive material; 1061-Third groove; 1062-Seed layer; 1063-Metal layer; 1064-Fourth groove; 107-Substrate; 108-Photoresist. Detailed Implementation

[0044] The specific embodiments of this application will be described below with reference to the accompanying drawings and examples. Those skilled in the art can easily understand the technical problems solved by this application and the resulting technical effects from the content described herein. It is understood that the specific embodiments described herein are merely illustrative of the relevant invention and not intended to limit the invention. Furthermore, for ease of description, only the parts relevant to the invention are shown in the accompanying drawings.

[0045] It should be readily understood that the meanings of “on,” “above,” and “on top of” in this application should be interpreted in the broadest sense, such that “on” means not only “directly on something,” but also “on something” including intermediate components or layers existing between the two.

[0046] Furthermore, for ease of description, spatial relative terms such as “below,” “under,” “lower,” “above,” and “upper” may be used herein to describe the relationship of one element or component to another element or component shown in the accompanying drawings. In addition to the orientations described in the figures, spatial relative terms are also intended to cover different orientations of the device during use or operation. The device may be oriented in other ways (rotated 90° or otherwise), and the spatial relative descriptive terms used herein may be interpreted accordingly.

[0047] As used herein, the term "layer" refers to a portion of material comprising a region of a certain thickness. A layer may extend over the entirety of an underlying or upper layer structure, or may have a extent smaller than that of the underlying or upper layer structure. Furthermore, a layer may be a region of a homogeneous or heterogeneous continuous structure with a thickness less than that of the continuous structure. For example, a layer may be located between the top and bottom surfaces of a continuous structure, or between any pair of horizontally oriented planes therebetween. A layer may extend horizontally, vertically, and / or along a tapered surface. A substrate may be a single layer, which may include one or more layers, and / or may have one or more layers on, above, and / or below it. A single layer may include multiple layers. For example, a semiconductor layer may include one or more doped or undoped semiconductor layers, and may have the same or different materials.

[0048] As used herein, the term "substrate" refers to the material on which subsequent material layers are added. The substrate itself may be patterned. The material added on top of the substrate may be patterned or may remain unpatterned. Furthermore, the substrate may comprise a wide variety of semiconductor materials, such as silicon, silicon carbide, gallium nitride, germanium, gallium arsenide, indium phosphide, etc. Alternatively, the substrate may be made of a non-conductive material, such as glass, plastic, or sapphire wafers. Further alternatively, the substrate may have semiconductor devices or circuits formed therein.

[0049] It should be noted that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and to facilitate understanding and reading of the contents described in the specification. They are not intended to limit the scope of this application and therefore have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives of this application, should still fall within the scope of the technical content disclosed in this application. Furthermore, terms such as "above," "first," "second," and "a" used in this specification are merely for clarity of description and are not intended to limit the scope of this application. Changes or adjustments to their relative relationships, without substantially altering the technical content, should also be considered within the scope of this application's implementation.

[0050] It should also be noted that the longitudinal section corresponding to the embodiment of this application can be the section corresponding to the front view direction, the transverse section can be the section corresponding to the right view direction, and the horizontal section can be the section corresponding to the top view direction.

[0051] Furthermore, where there is no conflict, the embodiments and features described in this application can be combined with each other. This application will now be described in detail with reference to the accompanying drawings and embodiments.

[0052] See Figure 1 Existing optoelectronic hybrid redistribution structures provide optical and electrical transmission paths in different areas, resulting in a relatively large distance EP between the electrical pad 01 and the optical pad 02. The purpose of this application is to reduce the distance EP between the electrical pad 01 and the optical pad 02, achieving... Figure 2 The effect shown. (By) Figure 1 Transform into Figure 2 When the distance EP between the electrical pad 01 and the optical pad 01 is reduced, not only can the photoelectric transmission efficiency be improved, but more input / output (I / O) interfaces can also be provided, which is beneficial to product miniaturization.

[0053] Specifically, to achieve the above effect, the optoelectronic transmission lines can be layered (e.g., by rewiring). See also Figure 3 , Figure 3 This is a front view and a partially enlarged view of an optoelectronic hybrid redistribution structure 100 according to an embodiment of the present invention. The optoelectronic hybrid redistribution structure 100 includes:

[0054] The electronic component includes an optical pad 102 and an electrical pad 101, wherein the optical pad 102 is used to connect the light guiding path and the electrical pad 101 is used to connect the conductive path.

[0055] The light guide material 103 is disposed above the optical pad 102, and the light path 1031 propagates in the light guide material 103.

[0056] The top conductive material 104 is disposed above the light guide material 103 and in contact with the light guide material 103, serving as the reflective interface of the light guide material 103.

[0057] Thus, since the reflectivity of metals is generally higher than that of non-metals (for example, the reflectivity of aluminum is between 85% and 95%, that of silver is between 95% and 99%, that of gold is between 50% and 98%, that of copper is between 60% and 98%... In contrast, the reflectivity of non-metals such as polymethyl methacrylate is only between 5% and 10%, that of polyimide is also between 5% and 10%, that of polyethylene is between 10% and 15%, and that of glass is also between 5% and 10%...), the top conductive material 104 made of metal can serve as both a reflective layer to facilitate the transmission of light in the optical path 1031 and a conductive path to propagate electrical signals.

[0058] The photoconductive material 103 is disposed below the top conductive material 104, which helps to shorten the distance of the optoelectronic interconnect. Given that the speed of light is much greater than that of electricity (e.g., the speed of light is 3 × 10⁸ m / s, while the speed of electrical signal propagation in copper is 1.5 × 10⁸ m / s), the power consumption (heat dissipation) of light transmission is also lower than that of electricity. This design significantly improves the efficiency of optoelectronic transmission and enables the provision of more input / output (I / O) interfaces. This simple structure and low-cost approach allows for greater possibilities in performance design, facilitating product miniaturization.

[0059] Understandably, based on fundamental optical principles, for the propagation of light path 1031 to be realized, the projection of the top conductive material 104 in the vertical direction must completely cover the projection of the optical pad 102 in the vertical direction. Simultaneously, the reflective surface should maintain a certain tilt angle with the optical pad 102. An alternative approach is to provide a first groove 1041 on the top conductive material 104, whose sidewalls gradually taper along a first direction (this direction extends from the top conductive material 104 towards the electronic component).

[0060] The optical guide material 103 may include a protrusion 1032, which may be connected to the optical pad 102. Its projection in the vertical direction should completely cover the vertical projection of the tapered starting point on one side of the first groove 1041.

[0061] Furthermore, the optoelectronic hybrid redistribution structure 100 may also include a central conductive material 106, which is placed between the dielectric material 105 and the photoconductive material 103, serving as another reflective interface for the photoconductive material 103, and together with the top conductive material 104, achieves optical isolation. The central conductive material 106 may be provided with a third groove 1061 electrically connected to the electrical pad 101 and the top conductive material 104, the third groove 1061 being filled with a protruding portion 1032, and its sidewalls tapering along a first direction.

[0062] As one possible implementation, the optoelectronic hybrid redistribution structure 100 may further include a dielectric material 105 (e.g., encapsulation material, underfill, etc.) located between the electronic components and the photoconductive material 103, for encapsulating the optoelectronic hybrid redistribution structure 100 into a single unit. Partial first recess 1041 (see...) Figure 3 The bottom portion of the first groove 1041 may be in contact with the dielectric material 105.

[0063] To achieve miniaturization of the device, the light-conducting material 104 is connected to the optical pad 102 via its protrusion 1032. The dielectric material 105 is provided with a second groove 1051, which is filled by the protrusion 1032, and its sidewalls taper along a first direction.

[0064] The optical guide material 103 can be divided into two non-continuous parts, namely the first part 1036 and the second part 1037, by the first groove 1041. The first part 1036 fills the second groove 1051, and the second part 1037 fills the third groove 1061.

[0065] In one possible embodiment, the thickness of the photoconductive material 103 may exceed that of the top conductive material 104. The top conductive material 104 may include a seed layer 1042 and a metal layer 1043. It should be noted that the metal layer 1043 may be located on top of the seed layer 1042.

[0066] In another possible embodiment, the light-conducting material 103 may be one or more of polyimide (PI), polyethylene (PE), polymethyl methacrylate (PMMA), or glass-reinforced epoxy resin (glass Ajinomoto Build-up Film). The dielectric material 105 may be one or more of polyimide (PI), epoxy resin, epoxy resin (ABF), polypropylene (PP), or acrylic. Furthermore, organic photosensitive materials, non-photosensitive materials, and / or dry film materials may be used in the manufacture of the light-conducting material 103 and the dielectric material 105. The conductive materials (including the spacer conductive material 1035, the top conductive material 104, and the middle conductive material 106) can all be one of copper, gold, silver, aluminum, palladium, platinum, nickel, or alloys thereof.

[0067] It should be noted that the optoelectronic hybrid redistribution structure 100 can be formed layer by layer along the second direction (which points from the electronic components to the top conductive material). Before the formation of the photoconductive material 103, its structure is described in [reference needed]. Figure 4 . Figure 4 The upper half is a top view of the partial optoelectronic hybrid redistribution structure 100, and the lower half is a cross-sectional view along the top view AA'. Figure 4 It can be seen that the optical pad 102 can be disposed between the electrical pads 101, and the two are disposed in an alternating manner, which shortens the distance of the photoelectric transmission path.

[0068] The following is for reference. Figure 3 and Figure 5 An exemplary description of the dimensions of the optoelectronic hybrid redistribution structure 100 is provided, and this description is intended to illustrate rather than limit the scope of protection of this utility model:

[0069] The thickness L1 of the optical guide material 103 can be from 1 μm to 50 μm;

[0070] The thickness L2 of the dielectric material 105 can be from 1 μm to 20 μm;

[0071] The distance L3 between the bottom edge of the first groove 1041 and the top edge of the second groove 1051 can be from 1 μm to 10 μm;

[0072] The distance L4 between the optical pad 102 and the electrical pad 101 can be from 1 μm to 50 μm;

[0073] The thickness L5 of the metal layer 1043 can be from 0.5 μm to 5 μm;

[0074] The thickness L6 of the metal layer 1063 can be from 0.5 μm to 5 μm;

[0075] The thickness L7 of the seed layer 1042 can be from 0.1 μm to 2 μm;

[0076] The thickness L8 of the seed layer 1062 can be from 0.1 μm to 2 μm;

[0077] The top diameter L9 of the first groove 1041 can be from 2μm to 20μm;

[0078] The top diameter L10 of the second groove 1051 can be from 2μm to 20μm;

[0079] The slope α of the sidewall of the first groove 1041 can be from 5° to 85°;

[0080] The sidewall slope β of the second groove 1051 can be from 5° to 85°.

[0081] In summary, the optoelectronic hybrid rewiring structure 100 promotes both optical path 1031 transmission and electrical signal propagation, shortens the optoelectronic interconnection distance, leverages the advantages of high optical transmission speed and low power consumption to improve optoelectronic transmission efficiency, and provides more I / O interfaces. Its simple structure and low cost enable diverse performance designs, facilitating product miniaturization.

[0082] The following is for reference. Figure 6 , Figure 6 This is a schematic diagram of the optoelectronic hybrid redistribution structure 200 in one embodiment of the present invention. The optoelectronic hybrid redistribution structure 200 is similar to the optoelectronic hybrid redistribution structure 100, but has the following differences:

[0083] Compared to the optoelectronic hybrid redistribution structure 100, the top conductive material 104 of the optoelectronic hybrid redistribution structure 200 does not have a first groove 1041, but instead has sidewalls that gradually taper along a first direction. The projection of the top conductive material 104 in the vertical direction does not completely cover the projection of the electronic component in the vertical direction. The photoconductive material 103 is disposed between the top conductive material 104 and the dielectric material 105, and its projection in the vertical direction also does not completely cover the projection of the electronic component in the vertical direction.

[0084] Next reference Figure 7 , Figure 7 This is a schematic diagram of the optoelectronic hybrid redistribution structure 300 in another embodiment of the present invention. The optoelectronic hybrid redistribution structure 300 is similar to the optoelectronic hybrid redistribution structure 100, but with the following differences:

[0085] Compared to the optoelectronic hybrid redistribution structure 100, the conductive material 106 in the middle of the right side of the optoelectronic hybrid redistribution structure 300 is not horizontal, but is instead equipped with a fourth groove 1064 whose sidewalls taper along a first direction. This groove is electrically connected to both the electrical pad 101 and the top conductive material 104. The fourth groove 1064 is filled with a protrusion 1032. Furthermore, the top conductive material 104 of the optoelectronic hybrid redistribution structure 300 is not a two-layer structure consisting of a seed layer 1042 and a metal layer 1043, but a single-layer structure containing only the seed layer 1042.

[0086] The following is for reference. Figure 8 , Figure 8 This is a schematic diagram of the optoelectronic hybrid redistribution structure 400 in one embodiment of the present invention. The optoelectronic hybrid redistribution structure 400 is similar to the optoelectronic hybrid redistribution structure 300, but has the following differences:

[0087] Compared to the optoelectronic hybrid redistribution structure 300, the top conductive material 104 of the optoelectronic hybrid redistribution structure 400 is a double-layer structure composed of a seed layer 1042 and a metal layer 1043, rather than a single-layer structure containing only the seed layer 1042.

[0088] The following is for reference. Figure 9 , Figure 8 This is a schematic diagram of the optoelectronic hybrid redistribution structure 500 in one embodiment of the present invention. The optoelectronic hybrid redistribution structure 500 is similar to the optoelectronic hybrid redistribution structure 100, but with the following differences:

[0089] Compared to the optoelectronic hybrid redistribution structure 100, the optoelectronic hybrid redistribution structure 500's optical guide material 103 is composed of a first optical guide material 1033 and a second optical guide material 1034. The first optical guide material 1033 is located above the second optical guide material 1034.

[0090] A spacer conductive material 1035 is disposed between the first light-conducting material 1033 and the second light-conducting material 1034. Its shape can be freely designed to ensure electrical connection between the top conductive material 104 and the electrical pad 101, as well as the propagation of the light path. Specific design is unrestricted. For example, the spacer conductive material 1035 may have a fifth groove 10351 that tapers along a first direction of the sidewall. The first light-conducting material 1033 fills the fifth groove 10351, and the second light-conducting material 1034 fills the second groove 1051 and the third groove 1061.

[0091] See below. Figures 10-20 This invention describes the manufacturing steps of an embodiment of the optoelectronic hybrid redistribution structure 100:

[0092] Step 1: See Figure 10 A substrate 107 is provided with an electrical pad 101 and an optical pad 102.

[0093] Step 2: See Figure 11 Dielectric material 105 is formed on the substrate 107;

[0094] Step 3: See Figure 12 Grooves are formed on dielectric material 105, and seed layer 1062 is deposited;

[0095] Step 4: See Figure 13 Photoresist 108 is coated on top of seed layer 1062 and exposed;

[0096] Step 5: See Figure 14 Based on photoresist 108, a metal layer 1063 is deposited;

[0097] It should be noted that the seed layer 1062 and the metal layer 1063 can both be deposited using any of the following processes: PVD (Physical Vapor Deposition), electroplating, "Electro-less Plating" or "Electro-less Plating", printing, or potting metal.

[0098] Step 6: See Figure 15 Remove photoresist 108 (see Figure 14 (as shown), and etch away the excess seed layer 1062 to form the central conductive material 106;

[0099] Step 7: See Figure 16 A light-conducting material 103 is formed above the central conductive material 106 so that the light-conducting material 103 fills the existing groove.

[0100] Step 8: See Figure 17 A groove is formed on the optical guide material 103 to expose the central conductive material 106, and a seed layer 1042 is deposited on top of it;

[0101] It should be noted that, since the conductive material 106 in the middle has a certain thickness, the bottom of the groove formed on the light guide material 103 is not completely horizontal.

[0102] Step 9: See Figure 18 Photoresist 108 is coated on top of seed layer 1042 and exposed;

[0103] Step 10: See Figure 19 Based on photoresist 108, a metal layer 1043 is deposited;

[0104] It should be noted that the seed layer 1042 and the metal layer 1043 can also be deposited using any of the following processes: PVD (Physical Vapor Deposition), electroplating, "Eless" or "Electro-free Plating", printing, or potting metal.

[0105] Step 11: See Figure 20 Remove photoresist 108 (see Figure 19 As shown), a photoelectric hybrid redistribution structure 100 is formed.

[0106] As used herein, the terms “substantially,” “materially,” “approximately,” and “about” are used to indicate and explain minor variations. For example, when used in conjunction with numerical values, the above terms may refer to a range of variation less than or equal to ±10% of the corresponding numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. As another embodiment, the thickness of a film or layer being “substantially uniform” may refer to the average thickness of the film or layer being less than or equal to ±10% of the standard deviation, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. The term "substantially coplanar" can refer to two surfaces that lie within 50 μm along the same plane (such as within 40 μm, 30 μm, 20 μm, 10 μm, or 1 μm along the same plane). If, for example, two components overlap or overlap within 200 μm, 150 μm, 100 μm, 50 μm, 40 μm, 30 μm, 20 μm, 10 μm, or 1 μm, then the two components can be considered "substantially aligned." If the angle between two surfaces or components is, for example, 90° ± 10° (such as ±5°, ±4°, ±3°, ±2°, ±1°, ±0.5°, ±0.1°, or ±0.05°), then the two surfaces or components can be considered "substantially perpendicular." When used in conjunction with an event or situation, the terms "substantially," "substantially," "approximately," and "about" can refer to the exact occurrence of the event or situation as well as the very close approximation of its occurrence.

Claims

1. An opto-electric hybrid re-wiring structure, characterized by, The optoelectronic hybrid redistribution structure includes: Electronic components, including optical pads and electrical pads; An optical guiding material is disposed above the optical pad; A top conductive material is disposed above and in contact with the light-conducting material, and the top conductive material serves as the reflective interface of the light-conducting material.

2. The optoelectronic hybrid re-wiring structure of claim 1, wherein, The optical pads are disposed between the electrical pads.

3. The optoelectronic hybrid re-wiring structure of claim 1, wherein, The projection of the top conductive material in the vertical direction completely covers the projection of the optical pad in the vertical direction.

4. The optoelectronic hybrid re-wiring structure of claim 1, wherein, The optical guide material includes a protruding portion, which is connected to the optical pad.

5. The optoelectronic hybrid re-wiring structure of claim 4, wherein, The top conductive material is provided with a first groove, the sidewall of the first groove tapers along a first direction, the first direction is from the top conductive material to the electronic component, and the projection of the protruding part in the vertical direction completely covers the projection of the tapering starting point of one side of the first groove in the vertical direction.

6. The optoelectronic hybrid re-wiring structure of claim 5, wherein, The optoelectronic hybrid rewiring structure also includes: A dielectric material is disposed between the electronic component and the optical guide material to separate the optical pad and the electrical pad; A central conductive material is disposed between the dielectric material and the optical guide material, serving as another reflective interface of the optical guide material.

7. The optoelectronic hybrid re-wiring structure of claim 6, wherein, The dielectric material is provided with a second groove, which is filled by the protruding portion, and the second groove gradually tapers along the first direction.

8. The optoelectronic hybrid re-wiring structure of claim 7, wherein, The central conductive material is provided with a third groove, which is electrically connected to the electrical pad and the top conductive material and is filled by the protruding portion.

9. The optoelectronic hybrid redistribution structure according to claim 8, characterized in that, The optical guide material is divided into a first part and a second part by the first groove, the first part fills the second groove, and the second part fills the third groove.

10. The optoelectronic hybrid redistribution structure according to claim 1, characterized in that, The top conductive material includes a seed layer and a metal layer, with the metal layer disposed above the seed layer.

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