Integrated processing apparatus for ion beam coating, polishing and dicing

Abstract

The utility model provides an integrated processing device of ion beam coating, polishing and cutting, which comprises a main chamber, a target material system, an ion beam system, a sample stage system and a control system, the target material system is arranged inside the main chamber and comprises a target material part at the top end of the main chamber; the ion beam system is arranged inside the main chamber and comprises a double ion beam device vertically installed on one side wall of the main chamber; the double ion beam device is fixed in the main chamber through at least two mounting positioning holes; the sample stage system is arranged inside the main chamber and comprises a replaceable sample stage fixed at the bottom of the main chamber with a predetermined spacing space from the target material part and the double ion beam device. The ion gun structure design of the utility model guarantees the stable operation of the ion gun, highly integrates functions, simultaneously solves the functions of coating, polishing and cutting in one device, and the specially designed structure will not affect the working efficiency due to airflow fluctuation.

Description

Technical Field

[0001] This utility model belongs to the field of ion beam micro-nano processing technology, and more specifically relates to an integrated processing device for ion beam coating, polishing and cutting. Background Technology

[0002] With the rapid development of semiconductor devices, optical components, biomedical devices, and other fields, the requirements for the precision of micro- and nano-scale processing are increasing. Traditional photolithography and laser processing technologies have limitations in terms of resolution, flexibility in three-dimensional structure processing, and compatibility with multiple materials. In contrast, ion beam micro- and nano-processing technology, with its atomic-level processing precision and non-contact processing characteristics, has become a key means of high-precision micro- and nano-manufacturing.

[0003] Currently, ion beam micro / nano fabrication equipment (such as focused ion beam (FIB) systems) is widely used in etching, deposition, and imaging, but existing technologies still have the following problems: - Functional limitation: Traditional equipment usually focuses on a single function (such as etching or deposition), requiring multiple switching of equipment or modules to complete complex processes (such as cutting before coating), resulting in low efficiency and introducing the risk of contamination.

[0004] - Insufficient process compatibility: Coating (ion beam induced deposition), cutting (ion beam milling) and polishing (low-energy ion beam smoothing) require different energies or ion source parameters, and existing equipment is difficult to integrate efficiently in the same system, requiring complex external configuration adjustments.

[0005] - Surface damage control: High-energy ion beam cutting can easily cause amorphization or subsurface damage to materials, while low-energy polishing often requires additional equipment support, affecting processing consistency and yield.

[0006] - Cost and operational complexity: The need for multiple functions forces users to purchase multiple devices, increasing hardware costs and maintenance difficulty.

[0007] In recent years, some studies have improved functional diversity by refining ion source design (such as combining liquid metal ion sources with gas field emission ion sources) or introducing multi-beam synergy techniques (using ion beams and electron beams together), but the following shortcomings still exist: - The conflicting process parameters between coating and cutting require a long time to stabilize the ion beam when switching. - Polishing functions rely on external auxiliary devices (such as mechanical polishing or chemical mechanical polishing), making it difficult to achieve in-situ atomic-level surface repair; - Low system integration and imperfect collaborative control algorithms for each module affect processing efficiency. Utility Model Content

[0008] (a) Technical problems to be solved To address the aforementioned shortcomings, this utility model aims to solve the technical problem of how to optimize and improve the integrated processing device for ion beam coating, polishing, and cutting. Furthermore, it aims to solve the technical problem of how to avoid the need for a long time to re-stabilize the ion beam during switching due to conflicts in the process parameters of coating and cutting when multiple processes are integrated with ion beams, thereby reducing switching time and improving the overall processing efficiency of the integrated processing device.

[0009] (II) Technical Solution To solve the above-mentioned technical problems, this utility model proposes an integrated processing device for ion beam coating, polishing, and cutting, comprising: a main chamber, a target system, an ion beam system, a sample stage system, and a control system, wherein... The target system is located inside the main chamber and includes a target portion located at the top of the main chamber; The ion beam system is located inside the main chamber and includes a dual ion beam device that is erected on one side wall of the main chamber. The dual ion beam device is hexahedral in shape. The top and bottom of its first side have mounting and positioning holes that extend to the third side opposite to the first side. Its second side is sandwiched between the first and third sides and has two ion beam outlets, one above the other. The first ion beam outlet is coated, and the second ion beam outlet is cut and polished. The third side has gas flow and current inlets. The dual ion beam device is fixed to at least two mounting and positioning posts in the main chamber near the top and bottom of the main chamber through at least two mounting and positioning holes; The sample stage system is located inside the main chamber and includes a replaceable sample stage fixed to the bottom of the main chamber, which is located at a predetermined distance from both the target section and the dual ion beam device.

[0010] Preferably, the first ion beam outlet and the second ion beam outlet are arranged in parallel, and the positions of the first ion beam outlet and the second ion beam outlet are both fixed positions, which cooperate with the fixed mounting positioning column of the dual ion beam device fixed to the main chamber through the mounting positioning hole to accurately position the ion beam emission angle and direction.

[0011] Preferably, the dual ion beam device further includes: The airflow and current inlet is the outer airflow outlet. A high-voltage electric pin is installed in the middle of the inlet to transmit current and control the airflow in the air chamber. The third side has an air chamber, which forms a sealing groove through an air chamber sealing ring, and surrounds the airflow and current inlet.

[0012] Preferably, the air chamber sealing ring comprises: The sealing ring is formed by using annular protrusions and annular grooves to seal the working gas in the working environment and prevent it from leaking into the main chamber, while keeping the sealing ring away from the heat source where the consumable is located.

[0013] Preferably, the dual ion beam device further includes: Two consumable replacement ports are located on the fourth side opposite to the second side, through which consumables can be installed or replaced; The positions of the two consumable replacement ports are set opposite to the positions of the first and second ion beam outlets on the second side.

[0014] Preferably, the dual ion beam device further includes: The spacer surface between the first ion beam outlet and the second ion beam outlet on the second side is designed as an arc-shaped concave surface. The other partition surface between the two consumable replacement ports on the fourth side, which is opposite to the second side, is designed as an arc-shaped concave surface corresponding to one of the partition surfaces on the second side.

[0015] Preferably, the dual ion beam device is a dual ion gun, with the first ion beam outlet being gun number one, which completes the coating process during operation, and the second ion beam being gun number two, which completes the cutting and polishing processes during operation.

[0016] Preferably, the replaceable sample stage includes at least one of the following types of working process sample stages: coating stage, polishing stage, and cutting stage.

[0017] Preferably, the target material is placed into the sample stage of the corresponding working process in the main chamber through the target material section, and the first or second ion beam outlet of the dual ion beam device is activated by the control system to complete the processing of the sample stage of the corresponding process; or, When the coating stage is placed, the sample of the target part is coated through the first ion beam outlet. When the polishing stage or cutting stage is placed, the sample of the target part is polished or cut through the second ion beam outlet.

[0018] Preferably, the voltage configuration device specifically includes: a power supply unit for supplying power to the processing device, a voltage control unit for controlling the voltage conversion between standard voltage and / or high voltage, and a voltage monitoring unit for acquiring parameter information of the unit voltage.

[0019] (III) Beneficial Effects This invention, through an optimized ion beam micro / nano fabrication device, employs an improved overall integrated design, a switching worktable, and a dual-ion beam processing structure. It features a multi-mode energy control module and real-time process monitoring technology, effectively optimizing and improving the efficient in-situ integration of functions such as coating, cutting, and polishing. Furthermore, it avoids the need for prolonged re-stabilization of the ion beam during switching processes due to conflicting process parameters when integrating multiple ion beam processes, thus reducing switching time and improving the overall processing efficiency of the integrated fabrication device. This overcomes the shortcomings of existing integrated fabrication technologies, such as reliance on external auxiliary devices (e.g., mechanical or chemical mechanical polishing) for polishing, difficulty in achieving in-situ atomic-level surface repair, low system integration, and imperfect collaborative control algorithms for each module, all of which affect processing efficiency. It also avoids industry pain points such as fragmented functions, poor process compatibility, difficulty in surface quality control, and low efficiency associated with existing equipment. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the overall structure of the processing device housing according to an embodiment of the present invention; Figure 2 This is a schematic diagram of the internal structure of the processing device according to an embodiment of the present invention; Figure 3 This is a schematic diagram showing the internal main structure of the processing device according to an embodiment of the present invention; Figure 4 This is a schematic diagram of the internal ion beam system installation of a processing device according to an embodiment of the present invention; Figure 5 This is an enlarged schematic diagram of the main parts of the ion beam system structure of the processing apparatus according to an embodiment of the present invention; Figure 6 This is a partially enlarged schematic diagram of the ion beam system structure of the processing apparatus according to an embodiment of the present invention, installed in the processing apparatus; Figure 7 This is a schematic diagram of the sample stage-coating stage of the processing device according to an embodiment of the present invention; Figure 8 This is a schematic diagram of the sample stage-polishing stage of the processing device according to an embodiment of the present invention; Figure 9 This is a schematic diagram of the sample stage-cutting stage of the processing device according to an embodiment of the present invention; Figure 10 This is a schematic diagram of the assembly structure of the sample stage-coating and polishing stage of the processing device according to an embodiment of the present invention; 1-Main chamber, 2-Target system, 3-Ion beam system, 31-Indicator number, 32-Ion beam outlet, 321-First ion beam outlet, 322-Second ion beam outlet, 33-Mounting positioning hole, 331-Mounting positioning post, 34-Gas flow and current inlet, 35-Sealing groove, 351-Gas chamber sealing ring, 36-Consumable replacement port, 37-High voltage electric ejector pin, 4-Sample stage, 5-Control system Detailed Implementation In the description of specific embodiments, detailed descriptions of structures, performance, effects, or other features are provided to enable those skilled in the art to fully understand the embodiments. However, this does not preclude those skilled in the art from implementing this utility model under specific circumstances with technical solutions that do not contain the aforementioned structures, performance, effects, or other features.

[0021] The box in the attached diagram Figure 1 Generally, these refer to functional entities, and do not necessarily correspond to physically independent entities. That is, these functional entities can be implemented in software, in one or more hardware modules or integrated circuits, or in different network and / or processing unit devices and / or microcontroller devices.

[0022] The same reference numerals in the accompanying drawings denote the same or similar elements, components, or parts, and therefore, repeated descriptions of the same or similar elements, components, or parts may be omitted below. It should also be understood that although terms such as first, second, third, etc., indicating designations, may be used herein to describe various devices, elements, components, or parts, these devices, elements, components, or parts should not be limited by these terms. That is, these terms are only used to distinguish one from another. For example, a first device may also be referred to as a second device, without departing from the essential technical solution of this utility model. Furthermore, the terms "and / or" and "and / or" refer to all combinations including any one or more of the listed items.

[0023] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to specific embodiments and accompanying drawings.

[0024] Figure 1 This is a schematic diagram of the overall structure of the integrated processing device for ion beam coating, polishing, and cutting according to this utility model. Figure 2 This is a schematic diagram of the internal structure of an embodiment of the processing device of this utility model. Figure 3 This is a schematic diagram showing the internal main structure of an embodiment of the processing device of this utility model. Figure 4 This is a schematic diagram of the internal ion beam system installation structure of the processing device of this utility model. (See diagram for reference.) Figure 2 , Figure 3As shown, the integrated ion beam micro / nano fabrication device can mainly include a main chamber 1, a target system 2, an ion beam system 3, a sample stage system 4, and a control system.

[0025] The target system 2, ion beam system 3, sample stage system 4, and control system are all housed in the main chamber 1.

[0026] like Figure 4 As shown, the ion beam system 3 is installed on the side of the main chamber 1, in the area shown by the dual ion beam installation position. The ion beam system is fixed in the area shown by the installation positioning pin 331 passing through the installation positioning hole 33 of the ion beam system. The sealing groove formed by the sealing ring sets two airflow and current inlets 34 that are set vertically and horizontally at a predetermined distance from each other on one side of the ion beam (the third side described later) at or near the center line position. Each inlet 34 includes an outer airflow outlet and a high-voltage electric pin 37 in the middle part. In one embodiment, the target system 2 is disposed inside the main chamber 1, which is an independently encapsulated box, preferably a sealable box. A portion of the target system 2 is provided at the top of the box, and the remaining portion of the target system is located inside the main chamber 1 and fixed to the top of the main chamber 1. Preferably, the target system passes through the top of the box, with a portion of the structure located outside the top of the box and another portion located inside the top of the box.

[0027] In one embodiment, an ion beam system 3 and a sample stage system 4 are disposed inside the main chamber 1. The sample stage system 4 is located below the target system 2, preferably directly below it. Furthermore, the sample stage system 4 needs to be positioned with a predetermined distance between itself and both the target system 2 components and the ion beam system 3 (such as a dual ion beam device) within the main chamber 1. The sample stage system 4 includes a replaceable sample stage fixed to the bottom of the main chamber, located with a predetermined distance from both the target components and the dual ion beam device. Figure 7 , 8 As shown in Figures 9 and 10. The ion beam system 3 is vertically mounted on one side wall of the main chamber 1, with the ion beam outlet of the ion beam system 3 facing and aligned with the sample stage system 4. A replaceable sample stage is shown... Figure 7 , 8 As shown in Figures 9 and 1, the sample stage includes at least one of the following working process sample stage types: coating stage, polishing stage, and cutting stage.

[0028] The following is combined with Figure 6 The diagram shows an example of the structure of an ion beam system, with a detailed description of the ion beam system portion.

[0029] In one embodiment, the ion beam system is disposed inside the main chamber and includes a dual ion beam device erected on one side wall of the main chamber. The ion beam device used in the ion beam system 3 includes a dual ion beam device, such as a dual ion beam gun / dual ion gun. The dual ion beam device can be hexahedral in shape, and further, for example... Figure 6 As shown, the first and third opposing sides are parallel and have large areas, while the second and fourth opposing sides are parallel and have small areas. The top and bottom surfaces, which are parallel to each other, have the smallest areas. This is the shape of a hexahedron.

[0030] The top and bottom of the first side have mounting holes 33 extending to a third side opposite the first side. The ion beam system 3, such as a dual ion beam device, is fixed in the main chamber via at least two mounting holes 33. Figure 4 The indicated location area. Preferably, at least two mounting holes 33 are spaced a predetermined distance apart, and the centers of each hole are located on the same vertical bottom and top edge line. More preferably, the two holes 33 are installed on at least two mounting positioning posts 331 near the top and bottom of the main chamber. Preferably, the mounting positioning holes 33 extend vertically from the first side to the third side, are located at the top and bottom of the first side, have a large spatial interval, and are symmetrical.

[0031] The first side has an indicator number 31, which is preferably engraved on the first side, for example, in an intaglio or relief form, or it can be a label. The indicator number 31 on the first side is as follows: Figure 6 The top and bottom are 1 and 2 respectively, which correspond to the two upper and lower airflow and current inlets 34 on the corresponding third side after installation, and the two upper and lower ion beam outlets 321 and 322 installed on the second side that is added to the first and third sides and is perpendicular to the two sides.

[0032] The second side is sandwiched between the first and third sides; preferably, the second side forms a perpendicular angle with both the first and third sides (i.e., the second side is perpendicular to the first and third sides). The second side has two ion beam outlets 32 spaced apart, preferably first and second ion beam outlets 321 and 322. Indicator number 1 is engraved on the first side and corresponds to the upper first ion beam outlet 321; indicator number 2 is engraved on the first side, located below indicator number 1 and corresponding to the lower second ion beam outlet 322. Depending on the position of the two ion beam outlets, the first ion beam outlet 321 can be set as a coating ion beam outlet (for coating samples), and the second ion beam outlet 322 can be set as a cutting and polishing ion beam outlet (for cutting and polishing samples). During operation, by changing / switching different sample stages (coating stage, polishing stage, cutting stage), ion beams can be emitted through different working ion beam outlets to complete the processing of the samples on the sample stage, reducing switching waiting time and improving processing efficiency. The first ion beam outlet 321 and the second ion beam outlet 322 are arranged in parallel, and the positions of the first ion beam outlet 321 and the second ion beam outlet 322 are fixed. They cooperate with the dual ion beam device to be fixed on the fixed mounting positioning column 331 of the main chamber through the mounting positioning hole 33 to accurately position the ion beam emission angle and direction.

[0033] Preferably, the spacer surface between the first ion beam outlet and the second ion beam outlet on the second side is designed as an arc-shaped concave surface. Further, the dual ion beam device is a dual ion gun, with the first ion beam outlet 321 corresponding to the first gun, which performs the coating process during operation, and the second ion beam outlet 322 corresponding to the second gun, which performs the cutting and polishing processes during operation.

[0034] Preferably, the target material is placed into the sample stage of the corresponding working process in the main chamber through the target material portion. The control system activates the first ion beam outlet 321 or the second ion beam outlet 322 corresponding to the dual ion beam device to complete the processing of the sample stage for the corresponding process. For example, when the coating stage is placed, the sample of the target material portion is coated through the first ion beam outlet 321; when the polishing stage or cutting stage is placed, the sample of the target material portion is polished or cut through the second ion beam outlet 322.

[0035] The third side has at least two symmetrical mounting holes 33, which are perpendicular to the first side and located at the top and bottom of the third side with a large spatial interval; an airflow and current inlet 34 located between the at least two mounting holes 33; and a sealing ring surrounding the two airflow and current inlets 34. Preferably, the two airflow and current inlets 34 include a peripheral airflow outlet and a high-voltage electric pin 37 disposed in the middle of the inlet. The high-voltage electric pin 37 transmits current and controls the airflow in the gas chamber. The two airflow and current inlets 34 are arranged in parallel and spaced apart by a predetermined distance, and the centers of the two inlets 34 are on a straight line perpendicular to the bottom and top surfaces of the ion beam system.

[0036] The third side has an air chamber, and the high-voltage electric pin 37 controls the airflow within the air chamber. The air chamber is specially designed to form a sealing groove using a sealing ring, surrounding the airflow and current inlet. Because the sealing groove is formed by the air chamber sealing ring, surrounding the airflow and current inlet 34, a sealing ring shape or an air chamber sealing ring shape is formed. Preferably, the sealing ring comprises an annular protrusion and an annular groove that cooperate to form a sealing ring, enclosing the working gas in the air chamber within the working environment to prevent leakage into the entire main chamber and keeping the sealing ring away from heat sources at the location of the consumable. Furthermore, a sealing ring is formed by the combination of annular protrusions and annular grooves to enclose the working gas in the gas chamber within the working environment, preventing leakage into the entire main chamber. This also keeps the sealing ring away from heat sources near consumables, avoiding heat damage and extending its service life. In this embodiment, the working gas in the gas chamber is argon.

[0037] The fourth side is sandwiched between the first and third sides. Preferably, the fourth side forms a perpendicular angle with both the first and third sides, i.e., perpendicular to the first and third sides and parallel to the second side. Preferably, the fourth side has at least two consumable replacement ports 36, and the positions of these ports are opposite to the positions of the first and second ion beam outlets 321 and 322 on the second side. Consumables can be installed or replaced independently through the consumable replacement ports 36. This design with two opposite replacement ports saves time during replacement, and the two ion beam outlets operate independently without interference. Processing can be completed directly using the corresponding ion beam when the worktable is changed, further saving switching time. Preferably, the predetermined interval between the at least two replacement ports 36 on the fourth side is designed as an arc-shaped concave surface corresponding to an interval surface on the second side.

[0038] Figure 7This is a partially enlarged schematic diagram of the structure of the ion system in the processing device according to an embodiment of the present invention after installation. As shown in the above schematic diagram, the first ion beam outlet 321 and the second ion beam outlet 322 are arranged in parallel, and the positions of the first ion beam outlet 321 and the second ion beam outlet 322 are both fixed positions. The dual ion beam device is fixed on the main chamber 1 through the mounting positioning hole 33. Through the fixed position, the ion beam can accurately position the ion beam emission angle and direction.

[0039] Furthermore, the dual-ion beam device employs dual ion guns. To more clearly distinguish the different functions of the first and second ion beams, the first ion beam outlet 321 is designated as gun number one, responsible for completing the coating process during operation. The second ion beam outlet 322 is designated as gun number two, responsible for completing the cutting and polishing processes during operation. This ion gun structure design ensures stable operation. This stability includes: firstly, mechanical structural stability, ensuring the ion gun remains in its original position after component replacement, and maintaining consistent emission angle and direction to guarantee optimal performance (otherwise, geometric misalignment would significantly reduce efficiency); secondly, gas path stability, with a specially designed structure ensuring the ion gun remains within a stable working gas atmosphere, preventing fluctuations in airflow from affecting its efficiency.

[0040] refer to Figure 7 A structural example of a sample stage-coating stage for a processing apparatus. Figure 8 Example of a structure for a sample stage-polishing stage in a processing apparatus. Figure 9 A structural example of a sample stage-cutting stage for a processing device and Figure 10 This is an example of a processing device sample stage assembly consisting of a coating and polishing table. To meet the different process requirements, the sample stage system 4 is configured as a replaceable sample stage. The replaceable sample stage includes at least one of the following process sample stage types: coating table, polishing table, and cutting table. Different worktables can be replaced according to different process requirements.

[0041] In this embodiment, the target material is placed onto the sample stage of the corresponding process in the main chamber 1 via the target material portion. The control system 5 activates the first ion beam outlet 321 or the second ion beam outlet 322 corresponding to the dual ion beam device to complete the processing of the corresponding process sample stage. When a coating stage is placed, the sample of the target material portion is coated through the first ion beam outlet 321. When a polishing stage or a cutting stage is placed, the sample of the target material portion is polished or cut through the second ion beam outlet 322. For example, when a specific target material needs to be polished, the target material is placed onto the sample stage system through the target material system 2 at the top of the main chamber 1. The sample stage system is then switched to a polishing stage, and the target material is polished through the second ion beam outlet 322. Through the above design, a high degree of functional integration is achieved, solving the functions of coating, polishing, and cutting simultaneously within a single device.

[0042] Furthermore, in one specific embodiment, the integrated device of this application belongs to an ion beam micro / nano fabrication device, which further includes a power supply system, a vacuum system, a high-voltage electrical system, a gas flow system, a human-machine interaction system, and a control system (not shown) for surrounding collaborative operation. Preferably, these systems constitute various parts of the following functional devices, such as: The voltage configuration device and human-machine interface device specifically include: a power supply unit, including a power supply system for supplying power to the processing device; a voltage control unit, including a power supply system, a high-voltage system, a human-machine interface system, and a control system, for controlling voltage conversion between standard voltage and / or high-voltage voltage; a voltage monitoring unit, including a power supply system, a high-voltage system, a human-machine interface system, and a control system, for acquiring parameter information of the unit voltage; and a human-machine interface unit, including the power supply system, the human-machine interface system, and the control system, which monitors and controls the operating data and mode adjustment of each device through the human-machine interface system, wherein the human-machine interface system includes, but is not limited to, output devices. (Audio, touch screen, display, etc.), input devices (keyboard, mouse, electronic stylus, etc.) and data transmission interface; vacuum control unit, including power supply system, vacuum system, human-machine interaction system and control system, used to acquire and control the air pressure and oxygen content in the main chamber 1 in real time; gas flow control unit, including power supply system, gas flow system, human-machine interaction system and control system, used to control the flow rate and flow of external gas entering the main chamber, and when the gas flow rate or flow reaches the set threshold, or when the gas and flow reach the set threshold, control the inflow and outflow rate or total amount of the gas flow rate and / or flow.

[0043] The aforementioned collaborative work components can also utilize existing control, interaction, monitoring, and power supply components.

[0044] In the description of specific embodiments, detailed descriptions of structures, performance, effects, or other features are provided to enable those skilled in the art to fully understand the embodiments. However, this does not preclude those skilled in the art from implementing this utility model under specific circumstances with technical solutions that do not contain the aforementioned structures, performance, effects, or other features.

[0045] The box in the attached diagram Figure 1 Generally, these refer to functional entities, and do not necessarily correspond to physically independent entities. That is, these functional entities can be implemented in software, in one or more hardware modules or integrated circuits, or in different network and / or processing unit devices and / or microcontroller devices.

[0046] The same reference numerals in the accompanying drawings denote the same or similar elements, components, or parts, and therefore repeated descriptions of the same or similar elements, components, or parts may be omitted below. It should also be understood that although terms such as first, second, third, etc., indicating designations, may be used herein to describe various devices, elements, components, or parts, these devices, elements, components, or parts should not be limited by these terms. That is, these terms are only used to distinguish one from another. For example, a first device may also be referred to as a second device, without departing from the essential technical solution of this utility model. Furthermore, the terms "and / or" and "and / or" refer to all combinations including any one or more of the listed items.

[0047] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of this utility model. It should be understood that this utility model is not inherently related to any specific computer, virtual device, or electronic device, and various general-purpose devices can also implement this utility model. The above descriptions are merely specific embodiments of this utility model and are not intended to limit this utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this utility model should be included within the protection scope of this utility model.

Claims

1. An integrated processing apparatus for ion beam deposition, polishing and dicing, comprising: include: The main chamber, target system, ion beam system, sample stage system, and control system, among which, The target system is located inside the main chamber and includes a target portion located at the top of the main chamber; The ion beam system is located inside the main chamber and includes a dual ion beam device that is erected on one side wall of the main chamber. The dual ion beam device is hexahedral in shape. The top and bottom of its first side have mounting and positioning holes that extend to the third side opposite to the first side. Its second side is sandwiched between the first and third sides and has two ion beam outlets, one above the other. The first ion beam outlet is coated, and the second ion beam outlet is cut and polished. The third side has gas flow and current inlets. The dual ion beam device is fixed to at least two mounting and positioning posts in the main chamber near the top and bottom of the main chamber through at least two mounting and positioning holes; The sample stage system is located inside the main chamber and includes a replaceable sample stage fixed to the bottom of the main chamber, which is located at a predetermined distance from both the target section and the dual ion beam device.

2. The processing apparatus of claim 1, wherein The dual ion beam device also includes: The first ion beam outlet and the second ion beam outlet are arranged in parallel, and the positions of the first ion beam outlet and the second ion beam outlet are fixed. They cooperate with the dual ion beam device to be fixed on the fixed mounting positioning column of the main chamber through the mounting positioning hole to accurately position the ion beam emission angle and direction.

3. The apparatus of claim 1 wherein, The dual ion beam device also includes: The airflow and current inlet is the outer airflow outlet. A high-voltage electric pin is installed in the middle of the inlet to transmit current and control the airflow in the air chamber. The third side has an air chamber, which forms a sealing groove through an air chamber sealing ring, and surrounds the airflow and current inlet.

4. The processing apparatus of claim 3, wherein The air chamber sealing ring includes: The sealing ring is formed by using annular protrusions and annular grooves to seal the working gas in the working environment and prevent it from leaking into the main chamber, while keeping the sealing ring away from the heat source where the consumable is located.

5. The apparatus of claim 1 wherein, The dual ion beam device also includes: Two consumable replacement ports are located on the fourth side opposite to the second side, through which consumables can be installed or replaced; The positions of the two consumable replacement ports are set opposite to the positions of the first and second ion beam outlets on the second side.

6. The apparatus of claim 1 wherein, The dual ion beam device also includes: The spacer surface between the first ion beam outlet and the second ion beam outlet on the second side is designed as an arc-shaped concave surface. The other partition surface between the two consumable replacement ports on the fourth side, which is opposite to the second side, is designed as an arc-shaped concave surface corresponding to one of the partition surfaces on the second side.

7. The apparatus of claim 1 wherein, The dual ion beam device consists of two ion guns. The first ion beam exits through gun number one, which performs the coating process during operation. The second ion beam exits through gun number two, which performs the cutting and polishing processes during operation.

8. The apparatus of claim 1 wherein, Replaceable sample stages include at least one of the following types of sample stages for working processes: coating stage, polishing stage, and cutting stage.

9. The processing apparatus of claim 8, wherein, Also includes: The target material is placed into the sample stage of the corresponding process in the main chamber through the target material section. The control system activates the first or second ion beam outlet of the dual ion beam device to complete the processing of the corresponding process sample stage; or... When the coating stage is placed, the sample of the target part is coated through the first ion beam outlet. When the polishing stage or cutting stage is placed, the sample of the target part is polished or cut through the second ion beam outlet.

10. The machine of claim 1 wherein, Also included are: A voltage configuration device, specifically including: a power supply unit for powering the processing device, a voltage control unit for controlling the voltage at the standard voltage and / or high voltage conversion, a voltage monitoring unit for obtaining parameter information of the unit voltage.

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