Feeding device and crystal growing apparatus having the same

Abstract

This utility model discloses a feeding device and a crystal growth apparatus having the same. The feeding device includes: a feeding cylinder extending vertically with a discharge port at its lower end; a bottom cone for opening and sealing the discharge port; a guide cylinder located below the feeding cylinder, defining a guiding channel on its inner side, the upper end of the guiding channel connecting to the discharge port and the lower end forming a drop outlet, wherein at least a portion of the guiding channel gradually decreases in cross-sectional area from top to bottom; and a splash guard sleeved outside the lower end of the feeding cylinder, with the guide cylinder arranged inside and connected to the splash guard, the lower end of the splash guard extending downward beyond the drop outlet. According to this utility model, the feeding device can change the raw material flow path, making the raw material more concentrated in the crucible, and can also reduce the lateral diffusion of water droplets when silicon enters the silicon solution, reducing the splashing of silicon liquid onto the surrounding heat field, heat shield, and insulation components, thus reducing equipment wear.

Description

Technical Field

[0001] This utility model relates to the field of crystal growth equipment technology, and in particular to a feeding device and a crystal growth equipment having the same. Background Technology

[0002] Related technologies indicate that traditional crystal growth furnaces typically employ a quartz cylinder with a uniform outer diameter and a conical bottom structure. The bottom cone is connected to a counterweight via a connecting rod. During feeding, the silicon material slides out from the gap between the bottom cone and the cylinder and falls into the crucible. Under the influence of gravity and the taper of the bottom cone, the contact between the silicon material and the molten silicon is "oblique," with the contact area gradually increasing. The impact force has components in both the horizontal and vertical directions, causing the molten silicon to spread towards the inclined side, forming a "fan-shaped" splash. The upward splash height of the molten silicon may be relatively low, while the lateral splash range is larger. Consequently, the splashed silicon may adhere to the heat shield and the inner wall of the insulation cylinder, damaging the equipment and making cleaning difficult. Simultaneously, the silicon material distribution is characterized by a central depression and convex edges. Uneven material distribution leads to localized temperature and concentration differences during crystal growth, affecting the uniformity of crystal quality and reducing product yield. Utility Model Content

[0003] This invention aims to solve at least one of the technical problems existing in the prior art. To this end, this invention provides a feeding device that allows the raw material to accumulate in a more concentrated shape in the crucible, reducing the lateral diffusion of water droplets when the silicon material enters the silicon solution, reducing the splashing of silicon liquid onto the surrounding heat field, heat shield, and insulation components, and reducing equipment wear.

[0004] This utility model also proposes a crystal growth device with the above-mentioned feeding device.

[0005] According to a first aspect of the present invention, a feeding device is used in a crystal growth apparatus, comprising: a feeding cylinder extending in a vertical direction and having a discharge port at its lower end; a bottom cone disposed at the lower end of the feeding cylinder for opening and sealing the discharge port; a guide cylinder disposed on the lower side of the feeding cylinder and defining a vertically extending guide channel on its inner side, the upper end of the guide channel communicating with the discharge port, the lower end of the guide channel forming a drop port, and at least a portion of the cross-sectional area of ​​the guide channel gradually decreasing in a downward direction; and a splash guard sleeved on the outer side of the lower end of the feeding cylinder, the guide cylinder being disposed inside the splash guard and connected to the splash guard, and the lower end of the splash guard extending downward beyond the drop port.

[0006] According to the feeding device of this utility model, by setting a guide cylinder at the lower end of the feeding cylinder, the guide cylinder defines a downward and radially inward inclined material guiding channel, and a splash guard is sleeved on the outside of the guide cylinder, the material flow path can be changed, making the material accumulation shape in the crucible more concentrated, facilitating the uniform distribution of silicon material in the quartz crucible by rotating the crucible, making the silicon material easier to melt, improving the uniformity of crystal quality, and increasing product yield. It can also reduce the lateral diffusion of water splash when the silicon material enters the silicon solution, reduce the splashing of silicon liquid onto the heat field, heat shield and insulation components around the crucible, and reduce equipment wear.

[0007] In some embodiments, the distance between the lower edge of the splash guard and the lower edge of the guide tube in the vertical direction is 30mm-100mm.

[0008] In some embodiments, the ratio of the minimum inner diameter of the guide tube to the inner diameter of the splash guard is 0.4-0.8; and / or, the difference between the minimum inner diameter of the guide tube and the inner diameter of the splash guard is 50mm-150mm.

[0009] In some embodiments, the ratio of the maximum inner diameter of the guide cylinder to the inner diameter of the discharge port is 1.2-1.6; and / or, the difference between the maximum inner diameter of the guide cylinder and the inner diameter of the discharge port is 60mm-100mm.

[0010] In some embodiments, at least a portion of the material guide channel is formed as a guide segment, the inner wall surface of which extends in a straight line obliquely toward the central axis of the guide cylinder in a top-down direction, wherein the angle between the inner wall surface of the guide segment and a plane perpendicular to the central axis of the guide cylinder (30) is 70°-80°; and / or, in a vertical direction, the length of the guide cylinder is 100mm-200mm.

[0011] In some embodiments, the lower end of the feeding cylinder has a raised first protrusion on its outer peripheral surface, and the upper end of the splash-proof cylinder has a raised second protrusion on its inner wall surface, with the second protrusion supported on the upper surface of the first protrusion; the outer peripheral surface of the guide cylinder has a raised third protrusion, and the inner wall surface of the splash-proof cylinder has a raised fourth protrusion, with the third protrusion supported on the upper surface of the fourth protrusion.

[0012] In some embodiments, the feeding cylinder includes a first section, a second section, and a third section connected sequentially from top to bottom. In the direction from top to bottom, the inner diameter of the second section gradually decreases. The first section and the third section are both equal-diameter sections, wherein the ratio of the inner diameter of the third section to that of the first section is 0.5-0.8.

[0013] In some embodiments, the feeding device further includes: a cylinder cover, the cylinder cover sealing the upper end of the feeding cylinder; a connecting rod, the connecting rod disposed inside the feeding cylinder, the lower end of the connecting rod being fixed to the bottom cone, the upper end of the connecting rod extending upward through the cylinder cover and out of the feeding cylinder, the connecting rod being used to drive the bottom cone to move in the vertical direction between a closed position and a maximum opening position, in the closed position, the bottom cone closing the discharge port, and in the maximum opening position, the bottom cone opening the discharge port and making the feeding flow of the feeding device a preset maximum value; wherein, the connecting rod is provided with a limiting block, the limiting block being located on the upper side of the cylinder cover, and when the bottom cone is in the maximum opening position, the limiting block abuts against the cylinder cover.

[0014] A crystal growth apparatus according to a second aspect of the present invention includes a crucible and a feeding device according to a first aspect of the present invention, the feeding device being used to add silicon material into the crucible.

[0015] According to the crystal growth equipment of this utility model, by setting the feeding device of the first aspect mentioned above, the overall performance of the crystal growth equipment is improved.

[0016] In some embodiments, the distance between the lower end edge of the splash guard and the molten silicon in the crucible is 30mm-70mm.

[0017] Additional aspects and advantages of this invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the feeding device according to an embodiment of the present utility model;

[0019] Figure 2 This is a cross-sectional view of the feeding device according to an embodiment of the present utility model;

[0020] Figure 3 This is a cross-sectional view of the feeding device according to an embodiment of the present invention when feeding silicon material;

[0021] Figure 4 yes Figure 3 A partially enlarged view of the feeding device shown.

[0022] Figure label:

[0023] 100. Feeding device;

[0024] 10. Feeding cylinder; 101. Storage chamber;

[0025] 11. First section; 12. Second section; 13. Third section; 131. Discharge port; 132. First boss;

[0026] 20. Bottom cone; 21. Clearance groove; 22. Fixing hole;

[0027] 30. Guide cylinder; 311. Material guide channel; 312. Material drop port; 31. Third boss;

[0028] 40. Splash guard; 41. Second boss; 42. Fourth boss;

[0029] 50. Cylinder cap; 60. Connecting rod; 70. Fixing nut; 80. Limiting block. Detailed Implementation

[0030] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this utility model, and should not be construed as limiting this utility model.

[0031] The following is for reference. Figures 1-4 The following describes a feeding device 100 according to a first aspect embodiment of the present invention. The feeding device 100 of this embodiment is used in a crystal growth apparatus for adding silicon material into the crucible of the crystal growth apparatus.

[0032] like Figures 2-4 As shown, the feeding device 100 according to the first aspect of the present invention includes: a feeding cylinder 10, a bottom cone 20, a guide cylinder 30, and a splash guard 40.

[0033] Specifically, the feeding cylinder 10 extends vertically, and a discharge port 131 is formed at the lower end of the feeding cylinder 10; a bottom cone 20 is provided at the lower end of the feeding cylinder 10 for opening and sealing the discharge port 131; a guide cylinder 30 is provided on the lower side of the feeding cylinder 10, and the inner side of the guide cylinder 30 defines a vertically extending guide channel 311, the upper end of the guide channel 311 is connected to the discharge port 131, and the lower end of the guide channel 311 is formed as a drop port 312. In the direction from top to bottom, at least part of the cross-sectional area of ​​the guide channel 311 gradually decreases; a splash guard 40 is sleeved on the outer side of the lower end of the feeding cylinder 10, the guide cylinder 30 is arranged inside the splash guard 40 and connected to the splash guard 40, and the lower end of the splash guard 40 extends downward beyond the drop port 312.

[0034] like Figure 2 As shown, the feeding cylinder 10 is a straight cylinder extending vertically. The cross-section of the feeding cylinder 10 can be circular. The inner side of the feeding cylinder 10 defines the storage cavity 101. When it is necessary to add or add silicon material to the crystal growth equipment, the silicon material can be added into the feeding cylinder 10 first, and then the feeding device 100 can be controlled to add silicon material into the crucible.

[0035] like Figure 2 and Figure 4 As shown, the bottom cone 20 extends into a cone shape along the vertical direction. From top to bottom, the outer circumference of the bottom cone 20 is a cone with a gradually increasing cross-sectional size. For example, the bottom cone 20 is a frustum with a circular cross-section, and the diameter of the upper end of the bottom cone 20 is smaller than the diameter of the lower end. When it is necessary to open the discharge port 131, the bottom cone 20 can be moved downwards. At this time, an annular discharge channel is formed between the cone surface of the bottom cone 20 and the inner wall of the feeding cylinder 10. As the descent distance of the bottom cone 20 increases, the cross-sectional size of the channel gradually increases. Thus, by adjusting the position of the bottom cone 20, the discharge speed of the silicon material can be flexibly adjusted to meet the feeding rate requirements of different crystal growth stages. The outer circumference of the bottom cone 20 is a cone surface, which guides the silicon material to slide smoothly, reducing the accumulation and blockage of silicon material near the discharge port 131, ensuring a continuous and stable feeding process, and improving the quality and efficiency of silicon crystal production. When the bottom cone 20 rises to cover the discharge port 131 at the lower end of the feeding cylinder 10, the outer peripheral surface of the bottom cone 20 can fit tightly against the inner wall of the feeding cylinder 10, blocking the silicon material from falling and avoiding leakage or continuous discharge during the feeding process.

[0036] Reference Figure 3 and Figure 4 As shown, the guide cylinder 30 is located on the lower side of the feeding cylinder 10 and extends in the vertical direction. The upper end of the guide cylinder 30 can be connected to the lower end of the feeding cylinder 10, or the guide cylinder 30 can be set at the lower end of the feeding cylinder 10 by other structural support members. The inner side of the guide cylinder 30 defines a guiding channel 311, which is open at both the upper and lower ends. The upper end of the guiding channel 311 is configured to completely receive the silicon material falling from the outlet 131. At the same time, the guiding channel 311 is used to guide the silicon material to the lower discharge port 312. The feeding device 100 feeds the silicon material into the crucible through the discharge port 312.

[0037] In the top-to-bottom direction, the cross-sectional size of the guide channel 311 can gradually decrease for only a portion of its length, or the entire cross-sectional size of the guide channel 311 can gradually decrease from its upper edge to its lower edge. During the feeding process, when the silicon material in the feeding cylinder 10 falls into the guide cylinder 30 through the outlet 131, the guide cylinder 30 can change the flow direction of the silicon material. Specifically, it can change the flow direction of the silicon material from downward and radially outward towards the outlet 131 to downward and radially inward towards the outlet 131. This allows the silicon material to accumulate in a more concentrated shape within the crucible, increasing the thickness of the silicon material at the center of the crucible. Furthermore, after feeding is complete, the rotation speed of the crucible can be increased, and the centrifugal force of rotation can make the silicon material more evenly distributed within the crucible. This makes the silicon material easier to melt, saves energy, and can better improve the uniformity of crystal quality, thereby increasing product yield.

[0038] In addition, after being guided by the guide cylinder 30, the silicon material falls into the silicon solution in a more concentrated position. Since the silicon material falls downward or downward and tilted towards the radial inside of the guide cylinder 30, the splashed silicon liquid is mainly sprayed vertically upward when the silicon material falls, with less lateral diffusion. This can reduce the amount of silicon liquid splashed onto the heat field, heat shield or insulation components around the crucible, thereby improving the service life of the components around the crucible.

[0039] Reference Figure 3 and Figure 4 As shown, the splash guard 40 is a straight cylindrical shape extending vertically. The cross-section of the splash guard 40 can be circular. The upper end of the splash guard 40 is fitted over the outer side of the lower end of the feeding cylinder 10, and the splash guard 40 is supported and fixed to the lower end of the feeding cylinder 10. Furthermore, the guide cylinder 30 is arranged inside the splash guard 40 and fixedly connected to it. This allows the splash guard 40 and the guide cylinder 30 to be integrated into a single splash-proof guide module, improving the assembly efficiency between the splash-proof guide module and the feeding cylinder 10.

[0040] In some examples, the guide cylinder 30 and the splash guard 40 can be integrally formed, welded, riveted, snap-fitted, or bolted together. In some examples, the splash guard 40 and the feeding cylinder 10 can be riveted, snap-fitted, or bolted together.

[0041] In this embodiment, the lower edge of the anti-splash cylinder 40 extends downward beyond the lower edge of the guide cylinder 30. When the silicon material enters the silicon solution and splashes water that flies outward radially, the anti-splash cylinder 40 can block the water splash inside the anti-splash cylinder 40, thereby reducing the amount of silicon liquid splashed onto the heat field, heat shield, or insulation components around the crucible, reducing equipment wear, and extending the service life of the components around the crucible.

[0042] According to the feeding device 100 of this utility model embodiment, a guide cylinder 30 is provided at the lower end of the feeding cylinder 10. The guide cylinder 30 defines a downward and radially inward inclined material guiding channel 311. An anti-splash cylinder 40 is sleeved on the outside of the guide cylinder 30. This not only changes the flow path of the raw material, making the raw material more concentrated in the crucible, but also facilitates the uniform distribution of silicon material in the quartz crucible by rotating the crucible, making the silicon material easier to melt, thus improving the uniformity of crystal quality and increasing product yield. It also reduces the lateral diffusion of water splashes when the silicon material enters the silicon solution, reduces the splashing of silicon liquid onto the heat field, heat shield and insulation components around the crucible, and reduces equipment wear.

[0043] In some embodiments of this utility model, such as Figure 4As shown, in the vertical direction, the distance H1 between the lower edge of the splash guard 40 and the lower edge of the guide tube 30 is 30mm-100mm. For example, the distance H1 between the lower edge of the splash guard 40 and the lower edge of the guide tube 30 can be 30mm, 35mm, 40mm, 45mm, 50mm, 55mm, 60mm, 65mm, 70mm, 75mm, 80mm, 85mm, 90mm, 95mm or 100mm.

[0044] It should be noted that when the distance between the lower edge of the splash guard 40 and the lower edge of the guide tube 30 is too small, the length of the splash guard 40 that can effectively block water splashes will be too short, resulting in poor blocking effect on splashed water. When the distance between the lower edge of the splash guard 40 and the lower edge of the guide tube 30 is too large, the length of the splash guard 40 will be too long, which will increase the distance between the discharge port 312 and the silicon liquid surface, resulting in large fluctuations in the molten liquid surface in the crucible, affecting the stability of the crystal growth environment and reducing the crystal yield.

[0045] In this embodiment, by setting the distance H1 between the lower edge of the splash shield 40 and the lower edge of the guide tube 30 to be greater than or equal to 30 mm and less than or equal to 100 mm, it can not only effectively block the lateral diffusion of water splashes when silicon material enters the silicon solution, but also maintain the stability of the crystal growth environment, ensure the feeding speed of silicon material, and reduce costs.

[0046] In some embodiments of this utility model, such as Figure 4 As shown, the ratio of the minimum inner diameter D1 of the guide cylinder 30 to the inner diameter D2 of the splash guard 40 is 0.4-0.8. For example, the ratio of the minimum inner diameter D1 of the guide cylinder 30 to the inner diameter D2 of the splash guard 40 can be 0.4, 0.45, 0.5, 0.55, 0.6, 0.65, 0.7, 0.75 or 0.8.

[0047] It should be noted that when the ratio of the minimum inner diameter D1 of the guide cylinder 30 to the inner diameter D2 of the splash guard 40 is too low, it indicates that the minimum inner diameter of the guide cylinder 30 is too small and the inner diameter of the splash guard 40 is too large. This will result in an excessively large gap between the guide cylinder 30 and the splash guard 40. In this case, when the silicon material falls from the drop port 312 at the lower end of the guide cylinder 30 to the silicon liquid surface, the splash guard 40 cannot effectively cover the splashed silicon liquid area, and the splashed silicon liquid is likely to overflow from the gap between the splash guard 40 and the guide cylinder 30, or from the gap between the splash guard 40 and the silicon liquid surface, reducing the protective effect of the splash guard 40. When the ratio of the inner diameter D1 of the guide cylinder 30 to the inner diameter D2 of the splash shield 40 is too high, the inner diameter of the lower end of the guide cylinder 30 will be closer to the inner diameter of the splash shield 40. At this time, the silicon material falling from the discharge port 312 is prone to impacting the inner wall of the splash shield 40, and is also prone to accumulating and blocking between the splash shield 40 and the guide cylinder 30. In addition, if the gap between the splash shield 40 and the guide cylinder 30 is too small, it will also affect the normal falling path of the silicon material, making the feeding process unsmooth and affecting the stability of crystal growth.

[0048] In this embodiment, by setting the ratio of the minimum inner diameter D1 of the guide cylinder 30 to the inner diameter D2 of the anti-splash cylinder 40 to be greater than or equal to 0.4 and less than or equal to 0.8, it is possible to ensure the effective gathering of silicon material by the guide cylinder 30, ensure precise and concentrated material feeding, reserve a suitable buffer space for splashed silicon material, and at the same time, enable the anti-splash cylinder 40 to reliably and effectively intercept splashed silicon liquid, reduce raw material loss, reduce equipment contamination, ensure smooth airflow during the feeding process, and improve the operational stability of the crystal growth equipment.

[0049] In some embodiments of this utility model, such as Figure 4 As shown, the difference between the minimum inner diameter D1 of the guide cylinder 30 and the inner diameter D2 of the splash guard 40 is 50mm-150mm. For example, the difference between the minimum inner diameter D1 of the guide cylinder 30 and the inner diameter D2 of the splash guard 40 can be 50mm, 60mm, 70mm, 80mm, 90mm, 100mm, 110mm, 120mm, 130mm, 140mm or 150mm.

[0050] In this embodiment, by setting the difference between the minimum inner diameter D1 of the guide cylinder 30 and the inner diameter D2 of the splash guard 40 to be greater than or equal to 50 mm and less than or equal to 150 mm, on the one hand, sufficient buffer space can be provided for silicon material splashing. When the silicon material falls from the drop port 312 of the guide cylinder 30, the inner wall of the splash guard 40 can effectively intercept the splashed silicon material, avoiding the silicon material rebound and accumulation due to the gap being too small or the protection failure due to the gap being too large. On the other hand, it can maintain smooth airflow inside the splash guard 40, reduce the interference of air pressure fluctuations on the falling path of the silicon material during the feeding process, and enable the silicon material to be stably output along the guide cylinder 30. In addition, it can also reduce the probability of silicon material colliding with the inner wall of the splash guard 40, reducing raw material loss and equipment wear.

[0051] In some embodiments of this utility model, such as Figure 4 As shown, the ratio of the maximum inner diameter D3 of the guide cylinder 30 to the inner diameter D4 of the discharge port 131 is 1.2-1.6. For example, the ratio of the maximum inner diameter D3 of the guide cylinder 30 to the inner diameter D4 of the discharge port 131 can be 1.2, 1.25, 1.3, 1.35, 1.4, 1.45, 1.5, 1.55 or 1.6.

[0052] It should be noted that when the ratio of the maximum inner diameter D3 of the guide cylinder 30 to the inner diameter D4 of the outlet 131 is too small, the dimensions of the guide cylinder 30 and the outlet 131 are close. If there is a slight misalignment between the guide cylinder 30 and the outlet 131, it can easily cause silicon material to jam, affecting the entry of silicon material in the feeding cylinder 10 from the outlet 131 into the guide cylinder 30. When the ratio of the maximum inner diameter D3 of the guide cylinder 30 to the inner diameter D4 of the outlet 131 is too large, the inner diameter of the upper end of the guide cylinder 30 will be too large. This will reduce the silicon material gathering effect of the guide cylinder 30, increasing the risk of silicon material and molten silicon splashing.

[0053] In this embodiment, by setting the ratio of the maximum inner diameter D3 of the guide cylinder 30 to the inner diameter D4 of the outlet 131 to 1.2-1.6, not only can the dimensions of the connection position between the guide cylinder 30 and the outlet 131 be adapted, facilitating the expansion and buffering of the silicon material falling from the outlet 131 and ensuring the smoothness of the material falling, but it can also conveniently and effectively guide the silicon material entering the guide cylinder 30 inward, ensuring that the silicon material can fall into the crucible stably and in a concentrated manner, thereby improving the quality and stability of crystal growth.

[0054] In some embodiments of this utility model, such as Figure 4 As shown, the difference between the maximum inner diameter D3 of the guide cylinder 30 and the inner diameter D4 of the discharge port 131 is 60mm-100mm. For example, the difference between the maximum inner diameter D3 of the guide cylinder 30 and the inner diameter D4 of the discharge port 131 can be 60mm, 65mm, 70mm, 75mm, 80mm, 85mm, 90mm, 95mm or 100mm.

[0055] In this embodiment, by making the difference between the maximum inner diameter D3 of the guide cylinder 30 and the inner diameter D4 of the outlet 131 60mm-100mm, the dimensions of the connection position between the guide cylinder 30 and the outlet 131 can be adapted, which facilitates the expansion and buffering of the silicon material falling from the outlet 131, ensuring the smoothness of the material falling. It can also conveniently and effectively guide the silicon material entering the guide cylinder 30 inward, ensuring that the silicon material can fall into the crucible stably and in a concentrated manner, thereby improving the quality and stability of crystal growth.

[0056] In some embodiments of this utility model, such as Figure 4 As shown, at least a portion of the material guide channel 311 is formed as a guide section, and the inner wall surface of the guide section extends in a straight line inclined toward the central axis of the guide cylinder 30 in a downward direction. The guide channel may be entirely formed as a guide section extending inclined toward the central axis, or a portion of the guide channel may be formed as the guide cylinder 30, and the remaining portion of the guide channel may be formed as a straight section of equal diameter.

[0057] In this embodiment, by extending the inner wall of the guide section in a straight line that extends downward and toward the central axis of the guide cylinder 30, the structure of the guide cylinder 30 can be simplified and the processing of the guide cylinder 30 can be facilitated. In addition, the inner wall surface that extends in an inclined straight line can allow the silicon material to slide smoothly along the wall surface, reducing the risk of silicon material accumulating or bouncing in the guide cylinder 30.

[0058] In other embodiments, the inner wall surface of the guide segment extends along an upwardly convex arc in a top-down direction.

[0059] In some embodiments of this utility model, such as Figure 4 As shown, the angle α between the inner wall surface of the guide section and the plane perpendicular to the central axis of the guide cylinder 30 is 70°-80°. For example, the angle α between the inner wall surface of the guide section and the plane perpendicular to the central axis of the guide cylinder 30 can be 71°, 72°, 73°, 74°, 75°, 76°, 77°, 78°, 79°, or 80°. Therefore, not only can the inclined inner wall surface provide downward momentum for the silicon material, allowing it to fall smoothly and preventing accumulation, but it can also slow down the falling speed of the silicon material to a certain extent, reducing splashing of the molten silicon when it falls into the molten silicon.

[0060] In some embodiments of this utility model, such as Figure 4 As shown, the length H2 of the guide cylinder 30 in the vertical direction is 100mm-200mm. For example, the length H2 of the guide cylinder 30 can be 100mm, 110mm, 120mm, 130mm, 140mm, 150mm, 160mm, 170mm, 180mm, 190mm or 200mm.

[0061] It should be noted that if the length of the guide cylinder 30 is too short, the movement path of the silicon material within the guide cylinder 30 will be insufficient. In this case, the silicon material cannot be fully gathered within the guide cylinder 30 and will be discharged from the discharge port 312. This dispersed falling silicon material will cause splashing of silicon material and molten silicon, reducing the accuracy of feeding. If the length of the guide cylinder 30 is too long, it will increase the overall height of the feeding device 100, which may easily cause interference between the feeding device 100 and the crucible or heating device, and may also cause silicon material to accumulate within the guide cylinder 30, increasing the risk of blockage.

[0062] In this embodiment, by setting the length H2 of the guide cylinder 30 to 100mm-200mm, not only can sufficient guiding stroke be provided for the silicon material, ensuring that the silicon material can fall stably and smoothly along the preset path, but also the space problem caused by the excessive height of the feeding device 100 can be avoided, reducing the probability of blockage of the guide cylinder 30 and ensuring the continuous and stable feeding process.

[0063] In some embodiments of this utility model, such as Figure 3 and Figure 4 As shown, the splash guard 40 and the feeding cylinder 10 are detachably connected. For example, the splash guard 40 and the feeding cylinder 10 can be snap-fitted together or connected by bolts. In this embodiment, by detachably connecting the splash guard 40 and the feeding cylinder 10, the installation and removal of the splash guard 40 and the feeding cylinder 10 can be facilitated, reducing the maintenance cost of the feeding device 100.

[0064] In some embodiments of this utility model, such as Figure 4 As shown, a first protrusion 132 is provided on the outer circumferential surface of the lower end of the feeding cylinder 10, and a second protrusion 41 is provided on the inner wall surface of the upper end of the splash guard 40. The second protrusion 41 is supported on the upper surface of the first protrusion 132. Thus, the splash guard 40 can be hung on the lower end of the feeding cylinder 10.

[0065] Specifically, there are multiple first protrusions 132, which are arranged at intervals along the circumference of the feeding cylinder 10. Adjacent first protrusions 132 cooperate to define a first notch. There are multiple second protrusions 41, which are arranged at intervals along the circumference of the splash guard 40. Each second protrusion 41 corresponds to a first notch. During the assembly of the splash guard 40 and the feeding cylinder 10, the second protrusions 41 and the first notches are aligned vertically and the second protrusions 41 extend through the first notches into the upper side of the first protrusions 132. Then, the splash guard 40 is rotated so that the second protrusions 41 and the first notches are staggered in the circumference of the feeding cylinder 10. At this time, the lower surface of the second protrusion 41 abuts against the upper surface of the first protrusion 132, thereby hanging the splash guard 40 on the lower end of the feeding cylinder 10.

[0066] In some embodiments of this utility model, such as Figure 4 As shown, the outer peripheral surface of the guide cylinder 30 is provided with a raised third protrusion 31, and the inner wall surface of the splash guard 40 is provided with a raised fourth protrusion 42. The third protrusion 31 is supported on the upper surface of the fourth protrusion 42. Thus, the guide cylinder 30 can be hung on the inner wall of the splash guard 40 to prevent the guide cylinder 30 from falling off.

[0067] Specifically, there are multiple fourth protrusions 42, which are arranged at intervals along the circumference of the splash guard 40. The second notch is defined by the cooperation between adjacent fourth protrusions 42. There are multiple third protrusions 31, which are arranged at intervals along the circumference of the guide cylinder 30. Each of the third protrusions 31 corresponds to a second notch. During the assembly of the guide cylinder 30 and the splash guard 40, the guide cylinder 30 is inserted into the splash guard 40 from bottom to top, and the third protrusions 31 are aligned with the first notch in the vertical direction. Then, the third protrusions 31 are inserted through the second notch and extended to the upper side of the fourth protrusion 42. Then, the guide cylinder 30 is rotated so that the third protrusions 31 and the second notch are staggered in the circumference of the splash guard 40. At this time, the lower surface of the third protrusion 31 abuts against the upper surface of the fourth protrusion 42, thereby hanging the guide cylinder 30 on the inner wall of the splash guard 40.

[0068] In some embodiments of this utility model, such as Figure 4 As shown, the upper edge of the guide cylinder 30 is flush with the outlet 131, or, in the vertical direction, the upper edge of the guide cylinder 30 is higher than the outlet 131. When the upper edge of the guide cylinder 30 is flush with the outlet 131, the silicon material can directly enter the guide cylinder 30 from the outlet 131, thereby avoiding the diffusion and splashing of silicon material caused by the falling gap formed by the height difference; when the upper edge of the guide cylinder 30 is higher than the outlet 131, the guide cylinder 30 can partially wrap around the outlet 131, thereby further constraining the initial falling path of the silicon material and reducing lateral deviation.

[0069] In this embodiment, by making the upper edge of the guide cylinder 30 higher than or flush with the discharge port 131, it can be ensured that all silicon material enters the guide channel 311, thereby improving the utilization rate of raw materials and ensuring a continuous and stable feeding process.

[0070] In some embodiments of this utility model, such as Figure 3As shown, the feeding cylinder 10 includes a first section 11, a second section 12, and a third section 13 connected sequentially from top to bottom. The inner diameter of the second section 12 gradually decreases from top to bottom, while the first section 11 and the third section 13 are both of constant diameter. The constant diameter of the first section 11 facilitates the storage of silicon material; the gradually decreasing inner diameter of the second section 12 reduces the silicon material's descent speed, gently contracting the silicon material flow; and the constant diameter of the third section 13 ensures stable output of silicon material to the outlet 131. Therefore, the feeding cylinder 10 of this embodiment can reduce the accumulation of silicon material within the feeding cylinder 10, making the feeding more uniform and smooth, and improving feeding stability.

[0071] Furthermore, such as Figure 3 As shown, the ratio of the inner diameter D5 of the third segment 13 to the inner diameter D6 of the first segment 11 is 0.5-0.8. For example, the ratio of the inner diameter D5 of the third segment 13 to the inner diameter D6 of the first segment 11 is 0.5, 0.55, 0.6, 0.65, 0.7, 0.75, or 0.8. It should be noted that if the ratio of the inner diameter D5 of the third segment 13 to the inner diameter D6 of the first segment 11 is too low, the inner diameter of the third segment 13 will be excessively narrowed, which can easily lead to silicon material jamming and blockage, affecting the continuity of feeding; if the ratio of the inner diameter D5 of the third segment 13 to the inner diameter D6 of the first segment 11 is too high, the shrinkage effect of the third segment 13 of the feeding cylinder 10 on the silicon material will be insufficient, making it difficult to effectively gather the silicon material and increasing the risk of subsequent splashing.

[0072] In this embodiment, by setting the ratio of the inner diameter D5 of the third segment 13 to the inner diameter D6 of the first segment 11 to 0.5-0.8, not only can the silicon material be effectively gathered at the lower end of the feeding cylinder 10, but the airflow disturbance and impact caused by the sudden change in cross-section can also be reduced, ensuring uniform and smooth feeding.

[0073] In some embodiments of this utility model, such as Figure 2 and Figure 3 As shown, the feeding device 100 also includes: a cylinder cover 50 and a connecting rod 60. The cylinder cover 50 covers the upper end of the feeding cylinder 10; the connecting rod 60 is disposed inside the feeding cylinder 10, and the lower end of the connecting rod 60 is fixed to the bottom cone 20 for driving the bottom cone 20 to move in the vertical direction. The upper end of the connecting rod 60 extends upward through the cylinder cover 50 and out of the feeding cylinder 10. The connecting rod 60 is used to drive the bottom cone 20 to move in the up and down direction between the closed position and the maximum opening position. In the closed position, the bottom cone 20 closes the discharge port 131. In the maximum opening position, the bottom cone 20 opens the discharge port 131 so that the feeding flow of the feeding device 100 is the preset maximum value.

[0074] This embodiment achieves sealing of the feeding cylinder 10 by setting a cylinder cover 50, preventing external contaminants from entering the feeding cylinder 10 and contaminating the silicon material, thus ensuring the cleanliness of the raw material. Simultaneously, this embodiment uses a connecting rod 60 to drive and control the raising and lowering of the bottom cone 20. By adjusting the position of the bottom cone 20, the opening of the discharge port 131 can be flexibly controlled, achieving stepless adjustment of the feeding rate to meet the needs of different growth stages. Furthermore, the rigid connecting rod 60 provides stable transmission, improving the convenience and reliability of controlling the bottom cone 20.

[0075] It should be noted that when the bottom cone 20 is in the maximum opening position, the position of the bottom cone 20 can make the gap between the bottom cone 20 and the inner wall of the feeding cylinder 10, as well as the gap between the bottom cone 20 and the guide cylinder 30, reach the most appropriate distance. At this time, the discharge flow from the feeding cylinder 10 through the discharge port 131 into the guide cylinder 30 is the maximum, that is, the preset maximum value of the discharge flow of the feeding device 100 is reached.

[0076] Furthermore, such as Figure 2 and Figure 3 As shown, a limiting block 80 is provided on the connecting rod 60. The limiting block 80 is located on the upper side of the cylinder cover 50. When the bottom cone 20 is in the maximum opening position, the limiting block 80 abuts against the cylinder cover 50. In this way, when the limiting block 80 abuts against the cylinder cover 50, it can not only limit the maximum downward stroke of the bottom cone 20, avoiding excessive descent of the bottom cone 20 and causing the opening of the discharge port 131 to become out of control, and preventing the silicon material from falling too fast and causing splashing or accumulation of silicon material in the guide cylinder 30, but also maintain the feeding throughput of the feeding device 100 at the preset maximum value, thereby improving the feeding efficiency.

[0077] In some embodiments of this utility model, such as Figure 4 As shown, a fixing hole 22 is formed on the bottom cone 20, extending through the bottom cone 20 in the vertical direction. The lower end of the connecting rod 60 passes through the fixing hole 22 and is connected to the fixing nut 70. This not only achieves a fixed connection between the connecting rod 60 and the bottom cone 20, ensuring the reliability of the connection, but also facilitates the disassembly and assembly of the bottom cone 20 and the connecting rod 60, reducing the maintenance cost of the feeding device 100.

[0078] In some embodiments of this utility model, such as Figure 4 As shown, the lower surface of the bottom cone 20 is provided with an upwardly recessed relief groove 21, and the lower end of the fixing hole 22 penetrates the bottom wall of the relief groove 21. The fixing nut 70 is disposed in the relief groove 21. This prevents the fixing nut 70 from protruding downward from the lower surface of the bottom cone 20, reducing the space occupied below the bottom cone 20. It also prevents the fixing nut 70 from interfering with the falling silicon material, thus improving the stability of the feeding process.

[0079] A crystal growth apparatus according to a second aspect of the present invention includes a crucible and a feeding device 100 according to the first aspect of the present invention, the feeding device 100 being used to add silicon material into the crucible.

[0080] The crystal growth apparatus according to the present invention improves the overall performance of the crystal growth apparatus by providing the feeding device 100 of the first aspect embodiment described above.

[0081] In some embodiments of this invention, the distance between the lower edge of the anti-splash cylinder 40 and the silicon solution in the crucible is 30mm-70mm. For example, the distance between the lower edge of the anti-splash cylinder 40 and the silicon solution in the crucible can be 30mm, 35mm, 40mm, 45mm, 50mm, 55mm, 60mm, 65mm, or 70mm. By limiting the distance between the lower edge of the anti-splash cylinder 40 and the silicon solution to 30mm-70mm, this embodiment not only effectively blocks the sputtering caused by silicon material falling into the silicon solution, reducing silicon loss, but also reduces the interference of the feeding device 100 on the thermal field of the silicon surface, ensuring a stable crystal growth environment and improving crystal growth quality.

[0082] The following will refer to Figures 1-4 The present invention describes a feeding device 100 according to a specific embodiment of the present invention.

[0083] Reference Figure 2 and Figure 3 The feeding device 100 includes: a connecting rod 60, a feeding cylinder 10, a cylinder cover 50, a bottom cone 20, a fixing nut 70, a splash guard 40, and a guide cylinder 30. The feeding cylinder 10, bottom cone 20, splash guard 40, and guide cylinder 30 are all quartz components, thereby ensuring the stability and durability of the feeding cylinder 10, bottom cone 20, splash guard 40, and guide cylinder 30 under specific working conditions.

[0084] Specifically, the feeding cylinder 10 is the main container for storing silicon material, used to temporarily store silicon material to be fed; the lower end of the feeding cylinder 10 forms a tapered discharge end that gradually narrows from top to bottom through an hourglass-shaped constriction. The cylinder cover 50 is placed on the top of the feeding cylinder 10, and the bottom cone 20 is installed at the bottom of the feeding cylinder 10.

[0085] The connecting rod 60 extends vertically into a long rod shape and passes through the feeding cylinder 10. The lower end of the connecting rod 60 is fixedly connected to the bottom cone 20 via a connecting nut. The connecting rod 60 is used to transmit the power of the drive motor to the bottom cone 20, thereby driving and controlling the vertical movement of the bottom cone 20. In this way, by moving the bottom cone 20 through the connecting rod 60, the relative position of the bottom cone 20 and the discharge port 131 at the bottom of the feeding cylinder 10 can be changed, realizing the opening and closing of the discharge port 131, controlling the feeding state of silicon material, precisely controlling the feeding process, and realizing precise operations such as quantitative feeding, meeting the strict requirements for material feeding in the production process.

[0086] The splash guard 40 is a straight cylinder installed at the lower end of the feeding cylinder 10 and detachably connected to it. The splash guard 40 prevents molten silicon from splashing, reducing material waste and damage to the thermal field, optimizing the feeding environment and effect, and significantly extending the service life of the thermal field. The detachable connection between the splash guard 40 and the feeding cylinder 10 facilitates later cleaning, maintenance, and replacement of the splash guard 40 and guide cylinder 30, solving the problems of difficult cleaning and inconvenient maintenance of traditional fixed structures, and improving equipment operation and maintenance efficiency.

[0087] The guide cylinder 30 is arranged inside the splash shield 40 and hung on the inner wall of the splash shield 40 to receive the material falling from the feeding cylinder 10. The inner side of the guide cylinder 30 defines an hourglass-shaped material guiding channel 311 that gradually narrows from top to bottom to gather silicon material.

[0088] When the feeding device 100 of this embodiment is in the material storage stage, the bottom cone 20 is in the state of closing the discharge port 131 of the feeding cylinder 10, and the material is stored in the feeding cylinder 10. At this time, the connecting rod 60 maintains a relatively fixed position. With the cooperation of the bottom cone 20 and the feeding cylinder 10, a closed space is formed, and the material is temporarily stored without leakage.

[0089] When the feeding device 100 of this embodiment is in the feeding stage, the operating linkage 60 moves up or down, causing the bottom cone 20 to change position, so that a feeding channel is formed between the bottom of the feeding cylinder 10, the guide cylinder 30, and the splash guard 40. Under the action of gravity, the material falls from the feeding cylinder 10 through the open outlet 131 into the guide cylinder 30, and then enters the silicon solution. When the feeding is completed or the feeding amount needs to be adjusted, the connecting linkage 60 is operated upward, and the bottom cone 20 returns to the state of closing the outlet 131, cutting off the feeding channel.

[0090] After the feeding device 100 finishes feeding, the crucible speed is appropriately increased. The centrifugal force of rotation is used to evenly distribute the silicon material in the quartz crucible, which is conducive to faster melting.

[0091] When the feeding device 100 of this embodiment is used to feed the silicon material into the crucible, the silicon material can fall perpendicular to the silicon solution surface, and the contact area with the silicon solution is minimized at the moment. The impact force on the silicon solution in the vertical direction is concentrated. When the silicon material enters the silicon solution, the water splash is mainly sprayed upward, in the form of a "column" or "umbrella". The range is relatively concentrated and the height of the water splash may be high, but the lateral diffusion is small. With the protection of the splash shield 40 of this embodiment, the thermal field, heat shield and heat insulation cylinder can be prevented from being splashed with silicon to the greatest extent.

[0092] In this embodiment, the guide cylinder 30 is arranged on the lower side of the bottom cone 20, which can change the flow path of the raw material, making the raw material more concentrated in the quartz crucible and increasing the center thickness. After the material is fed, the crucible rotation speed is increased, and the silicon material is more evenly distributed in the quartz crucible through the centrifugal force of rotation. The silicon material is easier to melt, more energy-efficient, and can better improve the uniformity of crystal quality and improve the product yield.

[0093] The feeding device 100 according to this embodiment can be applied to industries such as semiconductors and photovoltaics that rely on high-purity quartz components and have high requirements for material processing precision. The feeding device 100 can be used for the precise feeding of materials such as silicon, which helps to achieve stable, efficient and clean operation of the production process, greatly extends the service life of the hot zone, and improves product yield and efficiency.

[0094] In the description of this utility model, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.

[0095] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this utility model, "a plurality of" means two or more, unless otherwise explicitly specified.

[0096] In this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a communication connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0097] In the description of this specification, the references to terms such as "some embodiments," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least some embodiments or examples of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0098] Although embodiments of the present invention have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the claims and their equivalents.

Claims

1. A charging device for a crystal growing apparatus, characterized by comprising: include: A feeding cylinder, which extends in the vertical direction and has a discharge port at its lower end; A bottom cone, located at the lower end of the feeding cylinder, is used to open and seal the discharge port; A guide cylinder is provided on the lower side of the feeding cylinder, and the inner side defines a vertically extending material guiding channel. The upper end of the material guiding channel is connected to the discharge port, and the lower end of the material guiding channel is formed as a discharge port. In the direction from top to bottom, the cross-sectional area of ​​at least a portion of the material guiding channel gradually decreases. A splash guard is sleeved on the outside of the lower end of the feeding cylinder. A guide cylinder is arranged inside the splash guard and connected to it. The lower end of the splash guard extends downward beyond the discharge port.

2. The charging device according to claim 1, characterized in that In the vertical direction, the distance between the lower edge of the splash guard and the lower edge of the guide tube is 30mm-100mm.

3. The charging device of claim 1, wherein The ratio of the minimum inner diameter of the guide tube to the inner diameter of the splash guard is 0.4-0.8; and / or, The difference between the minimum inner diameter of the guide tube and the inner diameter of the splash guard is 50mm-150mm.

4. The charging device of claim 1, wherein The ratio of the maximum inner diameter of the guide cylinder to the inner diameter of the discharge port is 1.2-1.6; and / or, The difference between the maximum inner diameter of the guide cylinder and the inner diameter of the discharge port is 60mm-100mm.

5. The charging device of claim 1, wherein At least a portion of the material guiding channel is formed as a guide section, the inner wall surface of which extends in a straight line inclined toward the central axis of the guide cylinder in a downward direction. Wherein, the angle between the inner wall surface of the guide section and the plane perpendicular to the central axis of the guide cylinder is 70°-80°; and / or, in the vertical direction, the length of the guide cylinder is 100mm-200mm.

6. A charging device according to any one of claims 1-5, characterized in that The lower end of the feeding cylinder has a raised first protrusion on its outer circumferential surface, and the upper end of the splash-proof cylinder has a raised second protrusion on its inner wall surface. The second protrusion is supported on the upper surface of the first protrusion. The outer circumferential surface of the guide cylinder is provided with a raised third protrusion, and the inner wall surface of the splash-proof cylinder is provided with a raised fourth protrusion, with the third protrusion supported on the upper surface of the fourth protrusion.

7. A charging device according to any one of claims 1-5, characterized in that The feeding cylinder includes a first section, a second section, and a third section connected sequentially from top to bottom. In the direction from top to bottom, the inner diameter of the second section gradually decreases. The first section and the third section are both sections of equal diameter. The ratio of the inner diameter of the third section to that of the first section is 0.5-0.

8.

8. A charging device according to any one of claims 1-5, characterized in that Also includes: A cylinder cover, which seals the upper end of the feeding cylinder; A connecting rod is disposed inside the feeding cylinder. The lower end of the connecting rod is fixed to the bottom cone, and the upper end of the connecting rod extends upward through the cylinder cover and out of the feeding cylinder. The connecting rod is used to drive the bottom cone to move in the vertical direction between a closed position and a maximum opening position. In the closed position, the bottom cone closes the discharge port. In the maximum opening position, the bottom cone opens the discharge port and makes the feeding flow of the feeding device reach a preset maximum value. The connecting rod is provided with a limiting block, which is located on the upper side of the cylinder cover. When the bottom cone is in the maximum opening position, the limiting block abuts against the cylinder cover.

9. A crystal growing apparatus, characterized by comprising: include: The crucible and the feeding device according to any one of claims 1-8, the feeding device being used to add silicon material into the crucible.

10. The crystal growing apparatus of claim 9, wherein The distance between the lower edge of the splash guard and the molten silicon in the crucible is 30mm-70mm.

Images