A novel crosstalk suppression auxiliary drive circuit

Abstract

This application provides a novel crosstalk suppression auxiliary drive circuit. At the instant MOSFET Q5 turns on, Vds rises rapidly, and Cgd begins charging. The charging current generates a voltage across resistor RG4 with the left side negative and the right side positive, forward-biasing the emitter of transistor Q2 and reverse-biasing the emitter of transistor Q1. Diode D1 and transistor Q2 are turned on, and the charging current is shunted through resistor RC2. At this time, the gate-source voltage of MOSFET Q6 is clamped across resistor RG4, effectively suppressing the positive crosstalk voltage. At the instant MOSFET Q5 turns off, Vds drops rapidly, and Cgd begins discharging. The discharge current generates a voltage across resistor RG4 with the left side positive and the right side negative, turning on transistor Q1 and turning off transistor Q2. The charging current is shunted through the external power supply series resistor RC1. At this time, the gate-source voltage of MOSFET Q6 is clamped across the external power supply series resistor RC1, effectively suppressing the negative crosstalk voltage. This application achieves zero reverse leakage current through hardware-level bidirectional isolation, improving circuit stability and anti-interference capability, reducing EMI, and minimizing current overload problems.

Description

Technical Field

[0001] This application belongs to the field of battery protection technology, specifically relating to a novel crosstalk suppression auxiliary drive circuit. Background Technology

[0002] With the rapid development of renewable energy applications such as photovoltaic power generation and energy storage systems, the demand for high-efficiency power electronic equipment is constantly increasing. In particular, converters (such as inverters and DC-DC converters) play a crucial role in these fields. In power electronic converters, power devices, as core components, determine the efficiency and reliability of the entire system. In recent years, the introduction of high-speed, high-frequency switching power devices (such as SiC MOSFETs and GaN HEMTs) has enabled converters to achieve higher power density and faster switching response, greatly improving power conversion efficiency and system integration.

[0003] However, during high-speed, high-frequency switching operations, the switching of power transistors is affected not only by their own electrical parameters but also by parasitic inductance, capacitance, and other factors in the power circuit. These parasitic parameters can cause electromagnetic interference (EMI) and crosstalk during switching, especially during high-frequency switching, where crosstalk becomes more severe. This manifests as positive and negative crosstalk voltage spikes. For example, during power device switching, voltage spikes caused by parasitic parameters in the power circuit can mislead the power device into turning on. If the positive voltage spike is too large, it may cause the power device to turn on incorrectly, leading to system instability or even damage to the power device, reducing the converter's reliability. Similarly, the appearance of negative voltage spikes can also have adverse effects on power devices. If the negative voltage spike is too large, it may cause the gate voltage of the power device to exceed its withstand voltage, thereby damaging the gate drive circuit and even causing device failure, resulting in the converter's inability to operate normally.

[0004] To avoid the negative impact of these crosstalk problems on the system, it is essential to effectively suppress or isolate crosstalk voltage spikes during the switching process of power devices, thereby ensuring the stability and reliability of the converter under high-frequency and high-speed switching conditions. Currently, research and applications addressing crosstalk are underway, but existing technologies often fail to adequately suppress crosstalk voltage spikes caused by parasitic parameters during high-speed and high-frequency switching. Utility Model Content

[0005] To address the shortcomings of the existing technology, this application provides a novel crosstalk suppression auxiliary drive circuit. When MOSFET Q5 is turned on, Vds rises rapidly, and Cgd begins charging. The charging current generates a voltage across resistor RG4 with a negative left and a positive right, forward-biasing the emitter junction of transistor Q2 and reverse-biasing the emitter junction of transistor Q1. Diode D1 and transistor Q2 are turned on, and the charging current is shunted through resistor RC2. The gate-source voltage of MOSFET Q6 is clamped across RG4, effectively suppressing the positive crosstalk voltage. When MOSFET Q5 is turned off, Vds drops rapidly, and Cgd begins discharging. The discharge current generates a voltage across resistor RG4 with a positive left and a negative right, turning on transistor Q1 and turning off transistor Q2. The charging current is shunted through the external power supply series resistor RC1, and the gate-source voltage of MOSFET Q6 is clamped across the external power supply series resistor RC1, effectively suppressing the negative crosstalk voltage. This is a relatively low-cost and flexible solution.

[0006] In a first aspect, this application provides a novel crosstalk suppression auxiliary drive circuit, including MOSFET Q5, MOSFET Q6, transistor Q2, transistor Q1, resistor RG4, and resistor RC1; wherein... The MOSFET Q5 is connected to the MOSFET Q6; The transistors Q2 and Q1 are connected in reverse parallel and then connected in series with the resistor RG4; The other end of the transistor Q1 is connected to an external power supply through resistor RC1; At the instant MOSFET Q5 is turned on, the drain-source voltage Vds of MOSFET Q5 rises rapidly, and the gate-drain capacitance Cgd of MOSFET Q5 begins to charge. Its charging current generates a voltage across resistor RG4 that is negative on the left and positive on the right, causing the emitter junction of transistor Q2 to be forward biased and the emitter junction of transistor Q1 to be reverse biased. At this time, the gate-source voltage of MOSFET Q6 is clamped across the voltage across resistor RG4, thus suppressing the forward crosstalk voltage. At the instant MOSFET Q5 is turned off, the drain-source voltage Vds of MOSFET Q5 drops rapidly, and the gate-drain capacitance Cgd of MOSFET Q5 begins to discharge. Its discharge current generates a voltage with positive on the left and negative on the right across resistor RG4, which turns on transistor Q1 and turns off transistor Q2. At this time, the gate-source voltage of MOSFET Q6 is clamped across the voltage of the external power supply series resistor RC1, and the negative crosstalk voltage is suppressed.

[0007] This application proposes a novel crosstalk suppression auxiliary drive circuit that suppresses positive and negative crosstalk voltages by precisely controlling the operating states of MOSFETs Q5 and Q6, and transistors Q1 and Q2. During the switching process of MOSFET Q5, the rapid change in the drain-source voltage Vds quickly generates a voltage difference through resistor RG4, driving the switching of transistors Q2 and Q1, thereby rapidly suppressing crosstalk voltage. The precise configuration of resistors RG4 and RC1 ensures that the circuit maintains a stable operating state during the turn-on and turn-off of MOSFET Q5. The gate-source voltage of MOSFET Q6 is clamped within a specific voltage range, effectively preventing misleading turn-on or turn-off of the MOSFETs due to excessively high or low voltages. Utilizing the characteristics of MOSFETs and transistors, the circuit can effectively reduce crosstalk in high-frequency signal processing and is suitable for circuits with high precision requirements, especially high-frequency power drive circuits.

[0008] Preferably, the novel crosstalk suppression auxiliary drive circuit proposed in this application further includes: The base of the transistor Q2 is connected to the resistor RG2; The collector of transistor Q2 is connected to the ground terminal through resistor RC2; The emitter of transistor Q2 is connected to the negative terminal of diode D1; The other end of the resistor RG2 is connected to the V_OUT port of the Driver chip.

[0009] Preferably, the novel crosstalk suppression auxiliary drive circuit further includes: The positive terminal of diode D1 is connected to resistor RG4 through inductor LG; The positive terminal of the diode D1 is also connected to the gate of the MOSFET Q6 through a resistor RG.

[0010] Preferably, the novel crosstalk suppression auxiliary drive circuit further includes: The emitter of transistor Q1 is connected to the positive terminal of diode D2; The base of transistor Q1 is connected to resistor RG1; the other end of resistor RG1 is connected to the V_OUT port of the driver chip.

[0011] Preferably, a novel crosstalk suppression auxiliary drive circuit further includes: The source of the MOSFET Q6 is connected to the negative terminal of the power supply through the inductor LS; The drain (D) of the MOSFET Q6 is connected to the negative terminal of the power supply via inductors LD and L1.

[0012] Preferably, a novel crosstalk suppression auxiliary drive circuit further includes: A drain-source capacitor DS is connected between the drain and source terminals of the MOSFET Q6. A gate-drain capacitor DG is connected between the drain (D) and gate (G) terminals of the MOSFET Q6. The gate-source capacitor GS is connected between the source (S) and gate (G) terminals of the MOSFET Q6.

[0013] Preferably, a novel crosstalk suppression auxiliary drive circuit further includes: The drain of the MOSFET Q5 is connected to the source of the MOSFET Q6 via the LD. The source of the MOS transistor Q5 is connected to DC1; The gate of the MOSFET Q5 is connected to the Driver chip.

[0014] Preferably, a novel crosstalk suppression auxiliary drive circuit further includes: The V_CC-01 port of the Driver chip is connected to the source of the MOS transistor Q6 through C1; The V_EE-01 port of the Driver chip is connected to the source of the MOS transistor Q6 through C2.

[0015] This application proposes a novel crosstalk suppression auxiliary drive circuit that utilizes the synergistic effect of transistors Q2 and Q1 with diodes D1 and D2. The connection between transistors Q2 and Q1 and diodes D1 and D2 enhances the absorption and suppression of crosstalk signals, isolates or modulates high-frequency signals, and reduces signal interference. The gate-drain and drain-source capacitance configuration of MOSFET Q6 better controls the switching characteristics of the MOSFET, avoiding switching instability caused by excessive voltage fluctuations and improving the overall stability of the circuit. Capacitors C1 and C2 further enhance the voltage stability between the power supply port and the source of MOSFET Q6, helping to smooth voltage fluctuations and reduce crosstalk signals caused by the power supply port. By using common components such as resistors, inductors, and capacitors, and combining different modules through reasonable connection methods, the circuit achieves efficient crosstalk suppression while maintaining a high degree of integration. This makes the circuit easier to integrate into existing systems and reduces design complexity.

[0016] Secondly, this application proposes a novel crosstalk suppression auxiliary drive circuit, comprising MOSFET Q5, MOSFET Q6, transistor Q2, transistor Q1, and resistor RG4; wherein... The MOSFET Q5 is connected to the MOSFET Q6; The transistors Q2 and Q1 are connected in reverse parallel and then connected in series with the resistor RG4; At the instant MOSFET Q5 is turned on, the drain-source voltage Vds of MOSFET Q5 rises rapidly, and the gate-drain capacitance Cgd of MOSFET Q5 begins to charge. Its charging current generates a voltage across resistor RG4 that is negative on the left and positive on the right, causing the emitter junction of transistor Q2 to be forward biased and the emitter junction of transistor Q1 to be reverse biased. At this time, the gate-source voltage of MOSFET Q6 is clamped across the voltage across resistor RG4, thus suppressing the forward crosstalk voltage.

[0017] This application proposes a novel crosstalk suppression auxiliary drive circuit that utilizes the gate-drain capacitance Cgd of MOSFET Q5 for charging. The generated current flows through resistor RG4, creating a voltage across the resistor that is negative on the left and positive on the right. This voltage forward-biasses the emitter junction of transistor Q2 and reverse-biases the emitter junction of transistor Q1, ultimately clamping the gate-source voltage of MOSFET Q6 and suppressing the generation of forward crosstalk voltage. Furthermore, through the linkage of resistor RG4 with transistors Q1 and Q2, the circuit achieves gate-source voltage clamping control of MOSFET Q6. In high-frequency, high-power applications, this effectively reduces the impact of external interference on the circuit and enhances the system's anti-interference capability.

[0018] Thirdly, this application proposes a novel crosstalk suppression auxiliary drive circuit, comprising MOSFET Q5, MOSFET Q6, transistor Q2, transistor Q1, resistor RG4, and resistor RC1; wherein... The MOSFET Q5 is connected to the MOSFET Q6; The transistors Q2 and Q1 are connected in reverse parallel and then connected in series with the resistor RG4; The other end of the transistor Q1 is connected to an external power supply through resistor RC1; At the instant MOSFET Q5 is turned off, the drain-source voltage Vds of MOSFET Q5 drops rapidly, and the gate-drain capacitance Cgd of MOSFET Q5 begins to discharge. Its discharge current generates a voltage with positive on the left and negative on the right across resistor RG4, which turns on transistor Q1 and turns off transistor Q2. At this time, the gate-source voltage of MOSFET Q6 is clamped across the voltage of the external power supply series resistor RC1, and the negative crosstalk voltage is suppressed.

[0019] This application proposes a novel crosstalk suppression auxiliary drive circuit. When MOSFET Q5 is turned off, its drain-source voltage Vds drops rapidly, causing the gate-drain capacitance Cgd of MOSFET Q5 to discharge. The discharge current flows through resistor RG4, forming a voltage with positive on the left and negative on the right, further turning on transistor Q1 and turning off transistor Q2, thereby clamping the gate-source voltage of MOSFET Q6. The clamped voltage is controlled by an external power supply through resistor RC1, successfully suppressing the generation of negative crosstalk voltage. Through the series configuration of resistor RC1 and the external power supply, the circuit can effectively clamp the gate-source voltage of MOSFET Q6, ensuring operation within a stable range.

[0020] Compared with the prior art, the advantages of this application are as follows: (1) By using transistors Q1, Q2, RG4 and RC1 between MOSFETs Q5 and Q6, the circuit can effectively suppress the generation of positive and negative crosstalk voltages during the switching process of MOSFET Q5 through the current charging and discharging process.

[0021] (2) By introducing diodes D1, D2, LG, LD and L1 into the circuit, the current path is optimized, the voltage fluctuation caused by transient switching is reduced, and the stability of the circuit is enhanced.

[0022] (3) By precisely clamping voltage and controlling current, crosstalk noise can be effectively reduced to prevent interference to other circuit components, especially important components such as the driver chip and MOSFET Q6, thereby improving the overall performance of the system.

[0023] (4) The circuit design has high scalability and can adjust the selection of components or add additional modules according to the actual application needs to meet the crosstalk suppression requirements in different scenarios. Attached Figure Description

[0024] Figure 1 This is a circuit diagram of a novel crosstalk suppression auxiliary driving circuit in one embodiment of this application. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions will be clearly and completely described below in conjunction with the embodiments of this application. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0026] Example 1, as Figure 1 As shown, this application provides a novel crosstalk suppression auxiliary drive circuit, including MOSFET Q5, MOSFET Q6, transistor Q2, transistor Q1, resistor RG4, and resistor RC1; wherein, The MOSFET Q5 is connected to the MOSFET Q6; The transistors Q2 and Q1 are connected in reverse parallel and then connected in series with the resistor RG4; The other end of the transistor Q1 is connected to an external power supply through resistor RC1; At the instant MOSFET Q5 is turned on, the drain-source voltage Vds of MOSFET Q5 rises rapidly, and the gate-drain capacitance Cgd of MOSFET Q5 begins to charge. Its charging current generates a voltage across resistor RG4 that is negative on the left and positive on the right, causing the emitter junction of transistor Q2 to be forward biased and the emitter junction of transistor Q1 to be reverse biased. At this time, the gate-source voltage of MOSFET Q6 is clamped across the voltage across resistor RG4, thus suppressing the forward crosstalk voltage. At the instant MOSFET Q5 is turned off, the drain-source voltage Vds of MOSFET Q5 drops rapidly, and the gate-drain capacitance Cgd of MOSFET Q5 begins to discharge. Its discharge current generates a voltage with positive on the left and negative on the right across resistor RG4, which turns on transistor Q1 and turns off transistor Q2. At this time, the gate-source voltage of MOSFET Q6 is clamped across the voltage of the external power supply series resistor RC1, and the negative crosstalk voltage is suppressed.

[0027] The novel crosstalk suppression auxiliary drive circuit proposed in this application, when the MOSFET Q5 is turned on, causes the drain-source voltage Vds of MOSFET Q5 to rise rapidly, charging the gate-drain capacitance Cgd and generating current. This current, through the voltage change induced by resistor RG4, forward-biasses the emitter junction of transistor Q2 and reverse-biases the emitter junction of transistor Q1. The gate-source voltage of MOSFET Q6 is clamped across the voltage across resistor RG4, effectively suppressing the generation of forward crosstalk voltage.

[0028] When MOSFET Q5 is turned off, the drain-source voltage Vds of MOSFET Q5 drops rapidly, the gate-drain capacitance Cgd discharges and generates current, which in turn forms a reverse voltage across resistor RG4, causing transistor Q1 to conduct and transistor Q2 to turn off. The gate-source voltage of MOSFET Q6 is clamped across the external power supply and the voltage across resistor RC1, effectively suppressing the generation of negative crosstalk voltage.

[0029] The circuit precisely controls the operating states of MOSFETs Q5 and Q6, reducing voltage fluctuations caused by the switching process and optimizing the circuit's response speed and stability. The reverse parallel connection of transistors Q1 and Q2 effectively reduces electromagnetic interference caused by the gate and drain capacitance of the MOSFETs.

[0030] Preferably, the novel crosstalk suppression auxiliary drive circuit proposed in this application further includes: The base of the transistor Q2 is connected to the resistor RG2; The collector of transistor Q2 is connected to the ground terminal through resistor RC2; The emitter of transistor Q2 is connected to the negative terminal of diode D1; The other end of the resistor RG2 is connected to the V_OUT port of the Driver chip.

[0031] Preferably, the novel crosstalk suppression auxiliary drive circuit further includes: The positive terminal of diode D1 is connected to resistor RG4 through inductor LG; The positive terminal of the diode D1 is also connected to the gate of the MOSFET Q6 through a resistor RG.

[0032] Preferably, the novel crosstalk suppression auxiliary drive circuit further includes: The emitter of transistor Q1 is connected to the positive terminal of diode D2; The base of transistor Q1 is connected to resistor RG1; the other end of resistor RG1 is connected to the V_OUT port of the driver chip.

[0033] Preferably, a novel crosstalk suppression auxiliary drive circuit further includes: The source of the MOSFET Q6 is connected to the negative terminal of the power supply through the inductor LS; The drain (D) of the MOSFET Q6 is connected to the negative terminal of the power supply via inductors LD and L1.

[0034] Preferably, a novel crosstalk suppression auxiliary drive circuit further includes: A drain-source capacitor DS is connected between the drain and source terminals of the MOSFET Q6. A gate-drain capacitor DG is connected between the drain (D) and gate (G) terminals of the MOSFET Q6. The gate-source capacitor GS is connected between the source (S) and gate (G) terminals of the MOSFET Q6.

[0035] Preferably, a novel crosstalk suppression auxiliary drive circuit further includes: The drain of the MOSFET Q5 is connected to the source of the MOSFET Q6 via the LD. The source of the MOS transistor Q5 is connected to DC1; The gate of the MOSFET Q5 is connected to the V_OUT pin of the Driver chip.

[0036] Preferably, a novel crosstalk suppression auxiliary drive circuit further includes: The V_CC-01 port of the Driver chip is connected to the source of the MOS transistor Q6 through C1; The V_EE-01 port of the Driver chip is connected to the source of the MOS transistor Q6 through C2.

[0037] The circuit effectively enhances the suppression of crosstalk voltage through the coordinated operation of transistors Q1 and Q2, diodes D1 and D2, and inductors. The operation of transistors Q2 and Q1, in conjunction with diodes D1 and D2, precisely adjusts the circuit voltage distribution, reducing signal interference. The introduction of inductors LG, LD, and L1, along with gate-drain capacitor DG and drain-source capacitor DS, improves the circuit's response to rapidly changing signals and reduces the impact of instantaneous voltage fluctuations. Simultaneously, the driver chip, connected to resistors RG1 and RG2 via the V_OUT port, enables precise driving of transistors Q1 and Q2 and other circuit components, enhancing the flexibility and response speed of drive control to meet the needs of different application scenarios.

[0038] Example 2: A novel crosstalk suppression auxiliary drive circuit proposed in this application includes MOSFET Q5, MOSFET Q6, transistor Q2, transistor Q1, and resistor RG4; wherein, The MOSFET Q5 is connected to the MOSFET Q6; The transistors Q2 and Q1 are connected in reverse parallel and then connected in series with the resistor RG4; At the instant MOSFET Q5 is turned on, the drain-source voltage Vds of MOSFET Q5 rises rapidly, and the gate-drain capacitance Cgd of MOSFET Q5 begins to charge. Its charging current generates a voltage across resistor RG4 that is negative on the left and positive on the right, causing the emitter junction of transistor Q2 to be forward biased and the emitter junction of transistor Q1 to be reverse biased. At this time, the gate-source voltage of MOSFET Q6 is clamped across the voltage across resistor RG4, thus suppressing the forward crosstalk voltage.

[0039] The circuit achieves precise clamping of the gate-source voltage of MOSFET Q6 by connecting transistors Q1 and Q2 in reverse parallel and combining this with a series resistor RG4. This ensures that the voltage does not exceed the design range under high voltage variations, preventing voltage surges from affecting the normal operation of the circuit. Furthermore, by rationally configuring the relationship between transistors Q1 and Q2 and resistor RG4, the current distribution and control are optimized, resulting in a more balanced voltage across the resistor and further improving the circuit's current stability and reliability.

[0040] Example 3: A novel crosstalk suppression auxiliary drive circuit proposed in this application includes MOSFET Q5, MOSFET Q6, transistor Q2, transistor Q1, resistor RG4, and resistor RC1; wherein, The MOSFET Q5 is connected to the MOSFET Q6; The transistors Q2 and Q1 are connected in reverse parallel and then connected in series with the resistor RG4; The other end of the transistor Q1 is connected to an external power supply through resistor RC1; At the instant MOSFET Q5 is turned off, the drain-source voltage Vds of MOSFET Q5 drops rapidly, and the gate-drain capacitance Cgd of MOSFET Q5 begins to discharge. Its discharge current generates a voltage with positive on the left and negative on the right across resistor RG4, which turns on transistor Q1 and turns off transistor Q2. At this time, the gate-source voltage of MOSFET Q6 is clamped across the voltage of the external power supply series resistor RC1, and the negative crosstalk voltage is suppressed.

[0041] The circuit optimizes current distribution and achieves voltage clamping through the reverse parallel connection of transistors Q1 and Q2 and the series connection of resistor RG4. At the instant MOSFET Q5 is turned off, the current change is rapid, and the coordinated action of resistor RG4 and the transistors avoids voltage fluctuations and crosstalk. After MOSFET Q5 is turned off, current flows rapidly through resistor RG4, generating a voltage and activating the conduction of transistor Q1, quickly suppressing crosstalk voltage. This improves the reliability of the circuit in high-frequency and high-speed applications.

[0042] Although exemplary embodiments have been described herein with reference to the accompanying drawings, it should be understood that the above exemplary embodiments are merely illustrative and are not intended to limit the scope of this application. Various changes and modifications can be made therein by those skilled in the art without departing from the scope and spirit of this application. All such changes and modifications are intended to be included within the scope of this application as claimed in the appended claims.

[0043] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0044] Although the description of this application has been given in conjunction with the specific embodiments described above, it will be apparent to those skilled in the art that many substitutions, modifications, and variations can be made based on the foregoing. Therefore, all such substitutions, modifications, and variations are included within the spirit and scope of the appended claims.

Claims

1. A novel crosstalk suppression auxiliary drive circuit, characterized by comprising: This includes MOSFET Q5, MOSFET Q6, transistor Q2, transistor Q1, resistor RG4, and resistor RC1; among which, The MOSFET Q5 is connected to the MOSFET Q6; The transistors Q2 and Q1 are connected in reverse parallel and then connected in series with the resistor RG4; The other end of the transistor Q1 is connected to an external power supply through resistor RC1; At the instant MOSFET Q5 is turned on, the drain-source voltage Vds of MOSFET Q5 rises rapidly, and the gate-drain capacitance Cgd of MOSFET Q5 begins to charge. Its charging current generates a voltage across resistor RG4 that is negative on the left and positive on the right, causing the emitter junction of transistor Q2 to be forward biased and the emitter junction of transistor Q1 to be reverse biased. At this time, the gate-source voltage of MOSFET Q6 is clamped across the voltage across resistor RG4, thus suppressing the forward crosstalk voltage. At the instant MOSFET Q5 is turned off, the drain-source voltage Vds of MOSFET Q5 drops rapidly, and the gate-drain capacitance Cgd of MOSFET Q5 begins to discharge. Its discharge current generates a voltage with positive on the left and negative on the right across resistor RG4, which turns on transistor Q1 and turns off transistor Q2. At this time, the gate-source voltage of MOSFET Q6 is clamped across the voltage of the external power supply series resistor RC1, and the negative crosstalk voltage is suppressed.

2. The novel crosstalk suppression auxiliary driving circuit according to claim 1, characterized in that, Also includes: The base of the transistor Q2 is connected to the resistor RG2; The collector of transistor Q2 is connected to the ground terminal through resistor RC2; The emitter of transistor Q2 is connected to the negative terminal of diode D1; The other end of the resistor RG2 is connected to the V_OUT port of the Driver chip.

3. The novel crosstalk suppression auxiliary drive circuit according to claim 2, characterized by Also includes: The positive terminal of diode D1 is connected to resistor RG4 through inductor LG; The positive terminal of the diode D1 is also connected to the gate of the MOSFET Q6 through a resistor RG.

4. The novel crosstalk suppression auxiliary drive circuit according to claim 3, characterized by Also includes: The emitter of transistor Q1 is connected to the positive terminal of diode D2; The base of transistor Q1 is connected to resistor RG1; the other end of resistor RG1 is connected to the V_OUT port of the driver chip.

5. The novel crosstalk suppression auxiliary drive circuit according to claim 4, characterized by Also includes: The source of the MOSFET Q6 is connected to the negative terminal of the power supply through the inductor LS; The drain (D) of the MOSFET Q6 is connected to the negative terminal of the power supply via inductors LD and L1.

6. A novel crosstalk suppression auxiliary drive circuit according to claim 5, characterized by Also includes: A drain-source capacitor DS is connected between the drain and source terminals of the MOSFET Q6. A gate-drain capacitor DG is connected between the drain (D) and gate (G) terminals of the MOSFET Q6. The gate-source capacitor GS is connected between the source (S) and gate (G) terminals of the MOSFET Q6.

7. A novel crosstalk suppression auxiliary drive circuit according to claim 6, characterized by Also includes: The drain of the MOSFET Q5 is connected to the source of the MOSFET Q6 via the LD. The source of the MOS transistor Q5 is connected to DC1; The gate of the MOSFET Q5 is connected to the Driver chip.

8. The novel crosstalk suppression auxiliary drive circuit according to claim 7, characterized by Also includes: The V_CC-01 port of the Driver chip is connected to the source of the MOS transistor Q6 through C1; The V_EE-01 port of the Driver chip is connected to the source of the MOS transistor Q6 through C2.

9. A novel crosstalk suppression auxiliary drive circuit, characterized by comprising: This includes MOSFET Q5, MOSFET Q6, transistor Q2, transistor Q1, and resistor RG4; among which, The MOSFET Q5 is connected to the MOSFET Q6; The transistors Q2 and Q1 are connected in reverse parallel and then connected in series with the resistor RG4; At the instant MOSFET Q5 is turned on, the drain-source voltage Vds of MOSFET Q5 rises rapidly, and the gate-drain capacitance Cgd of MOSFET Q5 begins to charge. Its charging current generates a voltage across resistor RG4 that is negative on the left and positive on the right, causing the emitter junction of transistor Q2 to be forward biased and the emitter junction of transistor Q1 to be reverse biased. At this time, the gate-source voltage of MOSFET Q6 is clamped across the voltage across resistor RG4, thus suppressing the forward crosstalk voltage.

10. A novel crosstalk suppression auxiliary drive circuit, characterized by comprising: This includes MOSFET Q5, MOSFET Q6, transistor Q2, transistor Q1, resistor RG4, and resistor RC1; among which, The MOSFET Q5 is connected to the MOSFET Q6; The transistors Q2 and Q1 are connected in reverse parallel and then connected in series with the resistor RG4; The other end of the transistor Q1 is connected to an external power supply through resistor RC1; At the instant MOSFET Q5 is turned off, the drain-source voltage Vds of MOSFET Q5 drops rapidly, and the gate-drain capacitance Cgd of MOSFET Q5 begins to discharge. Its discharge current generates a voltage with positive on the left and negative on the right across resistor RG4, which turns on transistor Q1 and turns off transistor Q2. At this time, the gate-source voltage of MOSFET Q6 is clamped across the voltage of the external power supply series resistor RC1, and the negative crosstalk voltage is suppressed.

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