Ultra-short wave power amplifying device and communication equipment

Abstract

The utility model provides a kind of ultra-short wave power amplifier device and communication equipment, it is related to communication technical field, and ultra-short wave power amplifier device includes box body;Single power amplifier;Control circuit;Filter bank;Two filter switch matrix.This application realizes ultra-short wave full-band amplification by using single power amplifier combined with dynamic control circuit, bans power amplifier switch matrix, simplifies system architecture, reduces the number of components, and utilize integrated in the box body Multiband filter bank and based on diode filter switch matrix carry out accurate frequency selection and harmonic suppression, realize highly integrated packaging, reduce the volume, weight and structural complexity of device, while maintaining full-band coverage capability and excellent harmonic suppression performance, and because of integrated setting improves overall reliability and stability, solve the core problem of traditional scheme volume, heavy, high complexity.

Description

Technical Field

[0001] This utility model relates to the field of communication technology, and in particular to an ultra-shortwave power amplifier and communication equipment. Background Technology

[0002] Compared to other frequency bands, VHF signals can easily penetrate obstacles and have relatively clean spectrum resources, making them a crucial component in military applications and holding an irreplaceable position in military communications. VHF power amplifiers have a wide octave band and high output power, thus requiring stringent harmonic suppression.

[0003] To achieve full-band coverage and high harmonic suppression, VHF power amplifier modules typically consist of power amplification units and filtering units. Traditional VHF power amplifier modules include multiple power amplifiers to amplify power across different VHF frequency bands, with power amplifier selection achieved through a power amplifier switching matrix. Multiple filters are used to suppress harmonics at different frequencies, with filter selection achieved through a filter switching matrix. This system composition of multiple power amplifiers and multiple filters results in VHF power amplifier modules that are large, heavy, and highly complex. Utility Model Content

[0004] The main purpose of this invention is to propose an ultra-shortwave power amplifier and communication equipment, which aims to solve the problems of large size, heavy weight and high complexity caused by multiple components and multiple switch matrices in traditional solutions.

[0005] To achieve the above objectives, this application proposes an ultra-shortwave power amplifier device, comprising: The housing is equipped with corresponding input and output ports; A single power amplifier is housed within the enclosure, and the input terminal of the power amplifier is connected to an input signal via an input port. The control circuit, with its control terminal electrically connected to the power control terminal of the power amplifier, is used to dynamically adjust the output signal to the power amplifier in order to achieve full-band signal amplification of ultra-shortwave. A filter bank, housed within the housing, includes filters for multiple frequency bands; Two filter switch matrices are disposed within the housing. The input terminal of one filter switch matrix is ​​directly coupled to the output terminal of the power amplifier, and its output terminal is electrically connected to the input terminal of the filter bank. The input terminal of the other filter switch matrix is ​​electrically connected to the output terminal of the filter bank, and its output terminal outputs a signal through an output port. The filter switch matrix includes multiple diodes, and the multiple diodes of the same filter switch matrix are connected one-to-one with the multiple filters.

[0006] In one embodiment, the ultra-shortwave power amplifier is applied to a communication device, the communication device including a first power supply, a first control signal, a second power supply, and a second control signal; the control circuit includes: The first enable control circuit has its input terminal electrically connected to an external first power supply and a first control signal, and its output terminal electrically connected to the enable control terminal of the power amplifier, and is used to enable control of the amplifier. The power conversion circuit has its input terminal electrically connected to an external first power supply, and is used to convert the first power supply into a third power supply and output it. The second enable control circuit has its input terminal electrically connected to the third power supply and the external first control signal, and its output terminal electrically connected to the input terminal of the gate voltage control circuit, and is used to enable the gate voltage control circuit. The gate voltage control circuit has its input terminal electrically connected to an external second control signal and its output terminal electrically connected to the power control terminal of the power amplifier, and is used to control the output power of the power amplifier.

[0007] In one embodiment, the anodes of multiple diodes in the same filter switch matrix are connected to the same common connection point, and the cathode of each diode is connected to the input / output terminal of a filter. The multiple diodes in the same filter switch matrix are evenly distributed in a fan shape.

[0008] In one embodiment, each of the filters has a different frequency band, and the filters in similar frequency bands are arranged in an alternating pattern.

[0009] In one embodiment, the housing is further provided with: A power supply interface connector is soldered to the outer wall of the housing and is used to receive power supply signals from the first power supply and the second power supply. A control interface connector is soldered to the outer wall of the housing and is used to receive a first control signal and a second control signal.

[0010] In one embodiment, the input port and the output port are respectively provided with connectors and are respectively located at opposite ends of the housing. The power supply interface connector and the control interface connector are located at the end of the housing perpendicular to the input port connector.

[0011] In one embodiment, the diode is a PIN diode, and the plurality of filters are elliptical low-pass filters.

[0012] In one embodiment, the system further includes a circuit board on which the power amplifier, filter bank, and filter switch matrix are integrated. The circuit board is fixed to the housing by a soldering process.

[0013] In addition, to achieve the above objectives, this application also proposes a communication device, including the ultra-shortwave power amplifier as described above.

[0014] In one embodiment of a communication device, it further includes a first power supply, a second power supply, a first control signal, and a second control signal. The first power supply and the second power supply supply power the ultra-shortwave power amplifier. The first control signal and the second control signal are electrically connected to the control circuit.

[0015] This application achieves full-band amplification of ultra-shortwave by using a single power amplifier combined with dynamic control circuitry, eliminating the power amplifier switching matrix, simplifying the system architecture, reducing the number of components, and utilizing a multi-band filter bank integrated in the housing and a diode-based filter switching matrix for precise frequency selection and harmonic suppression. This achieves highly integrated packaging, reducing the size, weight, and structural complexity of the device, while maintaining full-band coverage and excellent harmonic suppression performance. Furthermore, the integrated design improves overall reliability and stability, solving the core problems of traditional solutions such as large size, heavy weight, and high complexity. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0017] Figure 1 This is a structural diagram of an ultra-shortwave power amplifier device according to the present invention; Figure 2 This is a structural diagram of the filter and filter switch matrix of an ultra-shortwave power amplifier device according to the present invention; Figure 3 This is an external structural diagram of an ultra-shortwave power amplifier device according to the present invention; Figure 4 This is a structural diagram of an ultra-shortwave power amplifier device according to the present invention; Figure 5 This is a PIN diode switching circuit diagram of an ultra-shortwave power amplifier device according to this utility model; Figure 6 This is a schematic diagram of a conventional ultra-shortwave power amplifier device.

[0018] Reference numerals: Box 01, Power supply interface connector 11, Control interface connector 12, Power amplifier 02, Control circuit 03, First enable control circuit 31, Power conversion circuit 32, Second enable control circuit 33, Gate voltage control circuit 34, Filter bank 04, Filter switch matrix 05, Diode 51.

[0019] The realization of the purpose, functional features and advantages of this utility model will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0020] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0021] It should be noted that if the embodiments of this utility model involve directional indicators (such as up, down, left, right, front, back, etc.), the directional indicators are only used to explain the relative positional relationship and movement of the components in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indicators will also change accordingly.

[0022] Furthermore, if the embodiments of this utility model involve descriptions such as "first" or "second," these descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, features defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, if the word "and / or" appears throughout the text, it means including three parallel solutions; for example, "A and / or B" includes solution A, solution B, or a solution that simultaneously satisfies A and B. Furthermore, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed by this utility model.

[0023] This application proposes an ultra-shortwave power amplifier device, such as... Figures 1-3As shown, the system includes: a housing 01 with opposing input and output ports; a single power amplifier 02 housed within the housing 01, the input terminal of which is connected to an input signal via an input port; a control circuit 03, the control terminal of which is electrically connected to the power controlled terminal of the power amplifier 02, used to dynamically adjust the output signal to the power amplifier 02 to achieve full-band amplification of ultra-shortwave signals; a filter bank 04 housed within the housing 01, comprising filters for multiple frequency bands; two filter switch matrices 05 housed within the housing 01, one of which has its input terminal directly coupled to the output terminal of the power amplifier 02, and its output terminal electrically connected to the input terminal of the filter bank 04; the other filter switch matrix 05 has its input terminal electrically connected to the output terminal of the filter bank 04, and its output terminal outputs a signal via an output port; each filter switch matrix 05 includes multiple diodes 51, with each diode 51 of the same filter switch matrix 05 corresponding to one of the filters.

[0024] More specifically, the VHF band, with its superior obstacle penetration capability and relatively clean spectrum resources, plays an indispensable role in military communications and is a crucial means of ensuring the transmission of critical information. However, VHF power amplifiers face unique technical challenges. Their operating bandwidth is typically very wide, while requiring high power output to meet the demands of long-distance communication. This wide-bandwidth, high-power characteristic inevitably generates a large number of harmonic components during operation. These harmonics act like "noise" in the communication channel, not only interfering with the operation of the amplifier itself but, more seriously, potentially leaking signal characteristics or interfering with legitimate users on other frequency bands. Therefore, extremely stringent requirements are placed on harmonic suppression.

[0025] To achieve effective coverage and meet stringent harmonic suppression requirements across such a wide frequency band, traditional VHF power amplifier modules must employ a "divide and conquer" architecture. Specifically, the entire VHF band is artificially divided into multiple narrower sub-bands. Each sub-band is equipped with a dedicated power amplifier for optimized amplification, and each sub-band also features a specially designed set of filters to precisely filter out the main harmonics generated by the operating signal in that band. For example... Figure 6 As shown, in order to achieve flexible switching of operating frequency bands, the system must also introduce a complex switching matrix network: one for selecting the amplifier corresponding to the current operating frequency band from among many power amplifiers, and another for selecting the filter channel of the corresponding frequency band from among many filters.

[0026] This system configuration of "multiple power amplifiers + multiple filters + dual-layer switching matrix" is the core cause of the problem. It directly leads to a surge in the number of components within the power amplifier module, complex interconnections, and a massive physical footprint. The end result is obvious: the module's size increases significantly, its weight increases dramatically, and the overall system's structural complexity, debugging difficulty, and potential failure points also rise sharply. These "three highs" of size, weight, and complexity severely restrict the deployment and application of equipment on military platforms with limited space and high mobility requirements. Therefore, seeking an innovative architecture that can achieve efficient full-band coverage and high harmonic suppression of ultra-shortwave while fundamentally overcoming the bottlenecks of size, weight, and complexity has become an urgent need for current technological development.

[0027] To address the aforementioned issues, this application proposes an ultra-shortwave power amplifier device, comprising a housing 01, a single power amplifier 02, a control circuit 03, a filter bank 04, and two filter switch matrices 05. The housing 01 serves as the physical carrier and shielding structure of the entire device, providing a highly integrated encapsulation space to ensure the internal circuitry is protected from external interference while achieving electromagnetic compatibility. The input and output ports at both ends of the housing 01 function as signal inlet and outlet, respectively. The input port receives external ultra-shortwave full-band RF signals to be amplified, while the output port outputs the amplified and filtered clean signal to the load. This compact integrated design is the physical basis for reducing size and weight. Specifically, the housing 01 is made of copper, which helps improve the module's thermal conductivity. Simultaneously, the surface is nickel-plated, and the nickel plating layer accelerates heat dissipation into the air through its high infrared emissivity, forming a highly efficient thermal management chain of "internal conduction and external dissipation." The soft nature of copper can easily cause deformation of the mounting holes; the nickel plating layer acts as a hardened outer shell to increase compressive strength and prevent poor contact after repeated disassembly and reassembly. The nickel layer fills the microscopic pores on the surface of the copper, forming a continuous conductive layer to ensure that there is no radio frequency leakage at the 01 joint of the box; at the same time, the ferromagnetism of nickel can suppress low-frequency magnetic field interference, making up for the antimagnetic shortcomings of copper.

[0028] A single power amplifier 02, housed within housing 01, receives input signals directly through its input port. This single power amplifier 02 replaces traditional multi-band power amplifiers, undertaking the task of broadband amplification of signals across the entire UHF band. It needs sufficient bandwidth, gain, and linearity to cover the high power output required for all target operating frequencies. A control circuit 03, electrically connected to the power-controlled terminal of power amplifier 02, dynamically adjusts the control signals, such as bias voltage, applied to the controlled terminal of power amplifier 02 in real time based on the current operating frequency or signal characteristics. This dynamic adjustment optimizes the operating state of power amplifier 02 at different frequencies, ensuring stable and high-quality amplified output across the entire UHF band, thus eliminating the need for a traditional power amplifier switching matrix. Specifically, in this embodiment, power amplifier 02 consists of two stages with a total gain of approximately 37dB and an output power of not less than 38dBm. It features both high and low power control functions and enable control functions.

[0029] Filter bank 04, housed within housing 01, comprises filters for multiple frequency bands. Also integrated within housing 01, filter bank 04 consists of multiple filters designed for different specific sub-frequency bands. Although power amplifier 02 is broadband, the harmonic components it generates differ and fall into different locations when operating at different frequencies. Each filter in filter bank 04 is specifically designed for its corresponding operating sub-frequency band, effectively filtering out the main harmonics and spurious components generated after signal amplification in that band, ensuring the spectral purity of the final output signal meets stringent military standards. Specifically, the filter segment frequencies can be: Filter 1: 30MHz–47.9MHz, Filter 2: 48MHz–77.9MHz, Filter 3: 78MHz–124.9MHz, Filter 4: 125MHz–199.9MHz, Filter 5: 200MHz–324.9MHz, and Filter 6: 325MHz–512MHz.

[0030] Two filter switch matrices 05 are disposed within the housing 01. The input terminal of one filter switch matrix 05 is directly coupled to the output terminal of the power amplifier 02, and its output terminal is electrically connected to the input terminal of the filter bank 04. The input terminal of the other filter switch matrix 05 is electrically connected to the output terminal of the filter bank 04, and its output terminal outputs a signal through an output port. Each filter switch matrix 05 includes multiple diodes 51, and the multiple diodes 51 of the same filter switch matrix 05 are connected one-to-one with multiple filters.

[0031] This can be understood as follows: The first filter switch matrix 05 is located on the power amplifier side, inside housing 01. Its input is directly coupled to the output of a single power amplifier 02, without any intermediate switches, while its output is electrically connected to the input of filter bank 04. Based on the current system operating frequency, the first filter switch matrix 05 intelligently and precisely routes the amplified but harmonic-containing signal output from the broadband power amplifier 02 to the corresponding sub-band filter in filter bank 04. This ensures that the signal enters the most matched filter for purification. The second filter switch matrix 05 is located on the output side, also inside housing 01. Its input is electrically connected to the output of filter bank 04, while its output is connected to the output port of housing 01. The second filter switch matrix 05 selects and gathers the purified output signal from filter bank 04 after passing through the corresponding sub-band filter, ultimately outputting it. These two switch matrices together complete the tasks of "on-demand distribution" and "result collection" of the signal within filter bank 04.

[0032] Both filter switch matrices 05 employ multiple diodes 51 as core switching elements. Their working principle is as follows: the multiple diodes 51 in the same filter switch matrix 05 are connected one-to-one with the multiple filters in the filter bank 04. By precisely controlling the DC bias applied to each diode 51, the signal path of the corresponding filter channel can be turned on or off quickly and reliably. When it is necessary to select a filter in a specific sub-frequency band, only the diodes 51 connected to the input and output sides of that filter are turned on, while the diodes 51 in other channels are in the off state, thereby achieving low-loss signal transmission in that specific filter channel and high isolation from other channels.

[0033] The working process of this application is as follows: the input UHF full-band signal enters the housing 01 through the input port and is directly amplified by a single power amplifier 02. The control circuit 03 dynamically adjusts the power amplifier in real time to ensure optimal performance across the entire frequency band. The amplified signal is directly fed into the first filter switch matrix 05 from the power amplifier output. This matrix routes the signal to the matched sub-band filter in the filter bank 04 for harmonic filtering by turning on the corresponding diode 51 switch according to the operating frequency. After leaving the filter, the purified signal enters the second filter switch matrix 05. This matrix also gathers the pure signal and sends it to the output port by turning on the corresponding diode 51 switch, completing the entire amplification and filtering process. All functional units are highly integrated into a single housing 01, achieving miniaturization, lightweight design, and a simplified architecture.

[0034] This application achieves full-band amplification of ultra-shortwave by using a single power amplifier 02 combined with a dynamic control circuit 03, eliminating the power amplifier switching matrix, simplifying the system architecture, reducing the number of components, and utilizing a multi-band filter bank 04 integrated in the housing 01 and a filter switching matrix 05 based on diodes 51 for precise frequency selection and harmonic suppression. This achieves highly integrated packaging, reducing the size, weight, and structural complexity of the device, while maintaining full-band coverage and excellent harmonic suppression performance. Furthermore, the integrated design improves overall reliability and stability, solving the core problems of large size, heavy weight, and high complexity of traditional solutions.

[0035] In one embodiment, such as Figure 4 As shown, the ultra-shortwave power amplifier is applied to communication equipment, which includes a first power supply, a first control signal, a second power supply, and a second control signal; the control circuit 03 includes: The first enable control circuit 31 has its input terminal electrically connected to an external first power supply and a first control signal, and its output terminal electrically connected to the enable control terminal of the power amplifier 02, for enabling control of the amplifier; the power conversion circuit 32 has its input terminal electrically connected to an external first power supply, for converting the first power supply to a third power supply and outputting it; the second enable control circuit 33 has its input terminal electrically connected to the third power supply and an external first control signal, and its output terminal electrically connected to the input terminal of the gate voltage control circuit 34, for enabling control of the gate voltage control circuit 34; the gate voltage control circuit 34 has its input terminal electrically connected to an external second control signal, and its output terminal electrically connected to the power controlled terminal of the power amplifier 02, for controlling the output power of the power amplifier 02.

[0036] This can be understood as follows: the first enable control circuit 31 receives an external first power supply and a first control signal, directly controlling the switching of the operating state of the power amplifier 02. When the first control signal issues a high-level enable command, the circuit turns on the first power supply to the enable control terminal of the power amplifier 02, waking the amplifier into standby mode; conversely, when the first control signal is a low-level shutdown command, the circuit cuts off the power supply path, forcing the amplifier to enter a zero-power sleep mode. This module ensures that the power amplifier only starts when needed, avoiding no-load losses.

[0037] The power conversion circuit 32 steps down / regulates the external first power supply to a third power supply, providing an independent, low-noise operating voltage for precision circuits such as gate voltage control. The second enable control circuit 33 operates based on the third power supply and is controlled by the first control signal to control the start and stop of the gate voltage control circuit 34, forming a two-stage switch for power regulation. When the first control signal is enabled and the third power supply is normal, the circuit outputs an activation signal to the gate voltage control circuit 34, allowing it to respond to power regulation commands; if the first control signal is disabled or the third power supply is abnormal, the gate voltage control circuit 34 is forcibly shut down. This design ensures that gate voltage regulation only operates when the main power supply of the power amplifier is on and the auxiliary power supply is stable, preventing power output loss due to misoperation.

[0038] The gate voltage control circuit 34 receives an external second control signal and dynamically adjusts the bias voltage output to the power controlled terminal of the power amplifier 02 to achieve continuous and precise control of the output power. The second control signal is interpreted as the target power value, and the circuit generates the corresponding gate bias voltage through closed-loop feedback or a lookup table algorithm. For example, when it is necessary to increase the output power, the positive gate voltage is increased to expand the conduction angle; when it is necessary to reduce the power, the gate voltage is decreased to shrink the conduction angle. The entire process compensates for the influence of temperature and frequency on the power in real time, maintaining power linearity and stability.

[0039] During startup, the first control signal enables the main power supply of the power amplifier, and the power amplifier 02 enters standby mode; the power conversion circuit 32 synchronously outputs the third power supply, and the second enable circuit detects that the main power supply / auxiliary power supply is ready, activating the gate voltage control circuit 34. During power adjustment, the external second control signal sets the target power, and the gate voltage control circuit 34 dynamically adjusts the gate voltage of the power amplifier, allowing the power amplifier 02 to accurately follow the command in terms of output power. During shutdown, the first control signal disables the power amplifier, and the second enable circuit first disables the gate voltage control to avoid sudden power changes, and the first enable circuit cuts off the main power supply of the power amplifier, allowing the system to enter safe sleep mode.

[0040] In this embodiment, the power amplifier 02 is powered by a dual 5V and 24V power supply. The +5V power input is supplied to the +5V control circuit 03 and the LDO power conversion circuit 32, which converts the 5V to 3.3V and provides it to the 3.3V control circuit 03. The 3.3V control circuit 03 outputs to the gate voltage control circuit 34. The 5V control circuit 03 and the 3.3V control circuit 03 enable the amplifier through the PE enable control signal, and the gate voltage control circuit 34 implements the power control function through the LP power control signal.

[0041] In one embodiment, such as Figure 2As shown, the anodes of multiple diodes 51 in the same filter switch matrix 05 are connected to the same common connection point, and the cathode of each diode 51 is connected to the input / output terminal of a filter. The multiple diodes 51 in the same filter switch matrix 05 are evenly distributed in a fan shape.

[0042] In this embodiment, the anodes of all diodes 51 in the same filter switch matrix 05 are converged to a single physical contact, forming the core switching hub for the radio frequency signal. When a forward bias voltage is applied to the common contact, all parallel diodes 51 conduct simultaneously, connecting the corresponding filter to the main path; when a reverse bias voltage is applied, the group of diodes 51 turns off synchronously, achieving physical isolation between the filter and the main path. This structure ensures the synchronicity and consistency of multi-channel filter switching, avoiding signal crosstalk caused by switching timing deviations.

[0043] Multiple diodes 51 are arranged radially at equal angles with the common connection point as the center to optimize the RF field distribution. The fan-shaped layout ensures that the microstrip line length from each diode 51 to the common point is equal and minimized, significantly reducing the conductor area at the anode node and thus suppressing the accumulation of high-frequency parasitic capacitance. The symmetrical structure ensures that the impedance continuity is strictly consistent when the RF signal is transmitted from the center to each branch of diode 51, avoiding reflection phase shift caused by path differences and effectively reducing port standing wave ratio. The power consumption of diodes 51 is evenly distributed in the circumferential space, and natural heat dissipation is achieved through air convection to prevent local overheating and performance drift.

[0044] In one embodiment, each of the filters has a different frequency band, and filters with similar frequency bands are arranged alternately.

[0045] In this embodiment, the VHF band (30-512MHz) is divided into six non-overlapping sub-bands: Filter 1: 30MHz–47.9MHz, Filter 2: 48MHz–77.9MHz, Filter 3: 78MHz–124.9MHz, Filter 4: 125MHz–199.9MHz, Filter 5: 200MHz–324.9MHz, and Filter 6: 325MHz–512MHz. Each filter is precisely responsible for a specific frequency range, achieving seamless processing of signals across the entire frequency band. The passband boundaries of each filter are closely connected (e.g., 47.9MHz and 48MHz), ensuring that any frequency signal can be captured by a single filter. The frequency band division follows a logarithmic growth law (narrow band at low frequencies, wide band at high frequencies), matching the propagation characteristics of VHF—low frequencies have strong diffraction and require fine division, while high frequencies are easily attenuated and can be covered by a wide band.

[0046] Physically separating adjacent filters in the same frequency band, such as placing filter 1 next to filter 3 instead of filter 2, utilizes spatial distance to block electromagnetic coupling paths. Filters in similar frequency bands, such as filters 1 and 2, have a high risk of overlapping passband edges, making their resonant cavities prone to parasitic coupling. By inserting filters with significant frequency differences, such as placing filter 3 next to filter 1, the stopband attenuation characteristics of large frequency difference filters are utilized to absorb leakage energy and suppress mutual interference. Harmonics from high-frequency filters, such as filter 6, may fall into the passband of low-frequency filters. With staggered layout, harmonics need to cross multiple filter bodies, and their energy is attenuated multiple times by the stopbands in the path, avoiding spurious responses. All filters are connected in parallel to the main path through a diode 51 switch matrix, forming a dynamically reconfigurable filter network. When a signal of a certain frequency band is input, only the filter of that frequency band is switched on, while the other filters are in a high-impedance isolation state. After the signal flows through the dedicated filter, out-of-band spurious emissions are deeply suppressed.

[0047] In one embodiment, such as Figure 3 As shown, the housing 01 is also provided with: a power supply interface connector 11, which is soldered to the outer wall of the housing 01 and is used to receive power supply signals from the first power supply and the second power supply; and a control interface connector 12, which is soldered to the outer wall of the housing 01 and is used to receive the first control signal and the second control signal.

[0048] This can be understood as follows: the power supply interface connector 11 serves as the physical entry point for power supply, guiding the externally input 24V main power and 5V auxiliary power into the internal circuitry of the housing, achieving independent power supply for high and low power levels. The two power pins pass through independent insulated channels within the connector into the housing 01, avoiding common-ground interference. The 24V high-current path directly connects to the power amplifier stage, while the 5V low-current path supplies power to the control circuit 03, achieving power grading from the physical contact point. The connector's metal shell is soldered to the housing 01 around its circumference, forming a continuous conductive barrier to block external electromagnetic noise from coupling into sensitive radio frequency areas through the power lines.

[0049] The control interface connector 12 establishes a bridge between the control signals and the logic circuitry within the enclosure, transmitting the PE enable signal and the LP power regulation signal. Specifically, the PE high-voltage signal is transmitted through wide-pitch pins, utilizing high drive voltage to suppress interference; the LP precision control signal is transmitted through shielded pins to prevent crosstalk distortion. The signal pins incorporate a microstrip impedance matching structure, maintaining the characteristic impedance of the control signal during its transition from the cable to the PCB, thus preventing reflections that could lead to logic misjudgments.

[0050] Metal leads pass through an insulating ring formed by molten glass powder. Upon cooling, the glass and metal leads / housing (01) bond at the molecular level, achieving a permanent hermetic seal and preventing corrosion from water vapor and salt spray. Glass insulators directly replace plastic connector housings, reducing installation thickness to millimeters, making them particularly suitable for ultra-thin equipment with limited sidewall space. The high dielectric strength of glass ensures high-voltage safety. Dual power supply interfaces avoid common-ground loop current, and glass insulator welding eliminates the risk of connector loosening, physically preventing system failures caused by poor contact.

[0051] In one embodiment, such as Figure 3 As shown, the input port and output port are respectively provided with connectors and are respectively located at opposite ends of the housing 01. The power supply interface connector 11 and the control interface connector 12 are located at the end of the housing 01 perpendicular to the input port connector.

[0052] The input and output channels of the radio frequency (RF) signal are physically separated to form a unidirectional transmission path, blocking reverse crosstalk and reflection superposition. The input and output ports are located at opposite ends of housing 01 to prevent strong transmitted signals from coupling to the receiver and causing blockage. The power and control signal interfaces are centrally located on the side wall perpendicular to the RF port, achieving three-dimensional spatial isolation between power distribution, logic control, and the RF core. Switching noise from the power supply cable and digital ripple from the control signal are confined to the non-RF area of ​​housing 01, with their electromagnetic radiation direction perpendicular to the sensitive axis of the RF port, utilizing directional attenuation to block noise coupling. The module power supply and control interface connector 12 uses glass insulators welded to the side wall of housing 01 to reduce the connector installation size.

[0053] In one embodiment, such as Figure 5 As shown, diode 51 is a PIN diode, and the multiple filters are elliptical low-pass filters.

[0054] PIN diodes, as electronic switches for high-power radio frequency signals, achieve nanosecond-level switching of filtering channels by controlling the impedance of the semiconductor layer through carrier injection. Under forward bias, the P and N layers inject holes and electrons into the I layer, forming an tunable plasma cloud, resulting in a milliohm-level low-resistance state. Under reverse bias, the I layer carriers are depleted, forming a high-resistance state with an impedance change exceeding ten thousand times. The carrier lifetime of the I layer is on the order of microseconds, far exceeding the radio frequency cycle, allowing the device to operate in a quasi-thermal equilibrium state, significantly reducing junction capacitance nonlinearity and avoiding harmonic distortion under large signals.

[0055] Elliptic low-pass filters construct a near-vertical transition band between the passband and stopband, achieving an ultra-steep roll-off characteristic with minimal order and maximally compressing unwanted spectrum occupancy. Multiple finite-frequency transmission zeros are inserted at the stopband edge; these zeros act like electromagnetic traps, generating infinite attenuation at specific frequencies, steepening the filter skirt. A small amount of ripple is allowed within the passband, concentrating and compressing the roll-off energy to the narrowest possible bandwidth, resulting in a reduced transition band width compared to conventional filters.

[0056] The biased circuit operates at +24V and -3.3V power supplies. Diode 51 is cut off at +24V and conducts at -3.3V. At the instant the PIN diode conducts at -3.3V, the carrier lifetime in the I-layer is significantly longer than the RF cycle, resulting in a gradual impedance switching characteristic and preventing transient spikes from contaminating the spectrum. The steep roll-off at the passband edge of the elliptic filter simultaneously filters out switching harmonics, ensuring the purity of channel switching. High-voltage reverse bias (+24V) allows the PIN diode to withstand kilowatt-level RF power, while the metal resonant cavity of the elliptic filter absorbs leakage energy, achieving a balance between high power capacity and ultra-high isolation through dual-stage protection. The small-volume PIN diode and compact elliptic filter are stacked in three dimensions, constructing a multi-stage filtering fortress within a limited space. Under +24V reverse voltage, the electric field strength in the I-layer depletion region is spatially broadened and diluted, preventing high-energy electrons from impacting the crystal lattice and generating hot carriers, thus suppressing long-term reliability degradation from its physical source.

[0057] The nonlinear phase response introduced by the elliptic filter at the passband edge is compensated by the carrier storage effect of the PIN diode I layer, maintaining the phase integrity of the large bandwidth signal and avoiding inter-symbol interference in high-speed data transmission.

[0058] In one embodiment, a circuit board is also included, on which the power amplifier 02, filter bank 04 and filter switch matrix 05 are integrated. The circuit board is fixed inside the housing 01 by a soldering process.

[0059] The circuit board is fixed to the housing 01 via a soldering process. This eliminates the mounting margins and clearances required for traditional screw fixing, creating a zero-gap physical contact between the circuit board and the metal base of housing 01, maximizing the utilization of three-dimensional space. The solder paste liquefies at high temperature and penetrates the micron-level gaps between the circuit board and housing 01, achieving full coverage through capillary action. Upon cooling, it forms a continuous metal bonding layer, replacing the mechanical anchoring function of screws. Eliminating the need for screw head protrusion and wrench operation space allows the circuit board to be laid close to the inner wall of housing 01, especially freeing up lateral space in the RF shielding cavity, creating conditions for the deployment of high-density filter arrays.

[0060] In addition, to achieve the above objectives, this application also proposes a communication device, including the ultra-shortwave power amplifier as described above. The ultra-shortwave power amplifier includes a housing 01 with opposing input and output ports; a single power amplifier 02 housed within the housing 01, its input terminal connected to an input signal via an input port; a control circuit 03 electrically connected to the power-controlled terminal of the power amplifier 02, used to dynamically adjust the output signal to the power amplifier 02 to achieve full-band ultra-shortwave signal amplification; a filter bank 04 housed within the housing 01, comprising filters for multiple frequency bands; and two filter switch matrices 05 housed within the housing 01, one of which has its input terminal directly coupled to the output terminal of the power amplifier 02, and its output terminal electrically connected to the input terminal of the filter bank 04; the other filter switch matrix 05 has its input terminal electrically connected to the output terminal of the filter bank 04, and its output terminal outputs a signal via an output port; each filter switch matrix 05 includes multiple diodes 51, with each diode 51 of the same filter switch matrix 05 corresponding to one of the filters.

[0061] This application achieves full-band amplification of ultra-shortwave by using a single power amplifier 02 combined with a dynamic control circuit 03, eliminating the power amplifier switching matrix, simplifying the system architecture, reducing the number of components, and utilizing a multi-band filter bank 04 integrated in the housing 01 and a filter switching matrix 05 based on diodes 51 for precise frequency selection and harmonic suppression. This achieves highly integrated packaging, reducing the size, weight, and structural complexity of the device, while maintaining full-band coverage and excellent harmonic suppression performance. Furthermore, the integrated design improves overall reliability and stability, solving the core problems of large size, heavy weight, and high complexity of traditional solutions.

[0062] In one embodiment of the communication device, a first power supply, a second power supply, a first control signal, and a second control signal are also included. The first and second power supplies provide power to the VHF / UHF power amplifier. The first and second control signals are electrically connected to the control circuit 03. In this embodiment, the first power supply is a 5V power supply, the second power supply is a 24V power supply, the first control signal is a PE enable control signal, and the second control signal is an LP power control signal. The power amplifier 02 is powered by a dual 5V and 24V power supply. The +5V power supply is input to the +5V control circuit 03 and the LDO power conversion circuit 32, which converts the 5V to 3.3V and provides it to the 3.3V control circuit 03. The 3.3V control circuit 03 outputs to the gate voltage control circuit 34. The 5V control circuit 03 and the 3.3V control circuit 03 enable the amplifier through the PE enable control signal, and the gate voltage control circuit 34 implements the power control function through the LP power control signal. The bias circuit is supplied with +24V and -3.3V. Diode 51 is cut off at +24V and turned on at -3.3V.

[0063] The above embodiments are merely preferred embodiments of this utility model and do not limit the patent scope of this utility model. Any equivalent structural or procedural transformations made based on the content of this utility model specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this utility model.

Claims

1. A supershortwave power amplifier, characterized in that, include: The housing is equipped with corresponding input and output ports; A single power amplifier is housed within the enclosure, and the input terminal of the power amplifier is connected to an input signal via an input port. The control circuit, with its control terminal electrically connected to the power control terminal of the power amplifier, is used to dynamically adjust the output signal to the power amplifier in order to achieve full-band signal amplification of ultra-shortwave. A filter bank, housed within the housing, includes filters for multiple frequency bands; Two filter switch matrices are disposed within the housing. The input terminal of one filter switch matrix is ​​directly coupled to the output terminal of the power amplifier, and its output terminal is electrically connected to the input terminal of the filter bank. The input terminal of the other filter switch matrix is ​​electrically connected to the output terminal of the filter bank, and its output terminal outputs a signal through an output port. The filter switch matrix includes multiple diodes, and the multiple diodes of the same filter switch matrix are connected one-to-one with the multiple filters.

2. The ultra-short wave power amplifying device according to claim 1, wherein The ultra-shortwave power amplifier is applied to communication equipment, which includes a first power supply, a first control signal, a second power supply, and a second control signal; the control circuit includes: The first enable control circuit has its input terminal electrically connected to an external first power supply and a first control signal, and its output terminal electrically connected to the enable control terminal of the power amplifier, and is used to enable control of the amplifier. The power conversion circuit has its input terminal electrically connected to an external first power supply, and is used to convert the first power supply into a third power supply and output it. The second enable control circuit has its input terminal electrically connected to the third power supply and the external first control signal, and its output terminal electrically connected to the input terminal of the gate voltage control circuit, and is used to enable the gate voltage control circuit. The gate voltage control circuit has its input terminal electrically connected to an external second control signal and its output terminal electrically connected to the power control terminal of the power amplifier, and is used to control the output power of the power amplifier.

3. The ultra-short wave power amplifying device according to claim 1, wherein The anodes of multiple diodes in the same filter switch matrix are connected to the same common connection point, and the cathode of each diode is connected to the input / output terminal of a filter. The multiple diodes in the same filter switch matrix are evenly distributed in a fan shape.

4. The ultra-short wave power amplifying device according to claim 2, wherein Each of the filters has a different frequency band, and filters in similar frequency bands are arranged in an alternating pattern.

5. The ultra-short wave power amplifying device according to claim 2, wherein The box body is also provided with: A power supply interface connector is soldered to the outer wall of the housing and is used to receive power supply signals from the first power supply and the second power supply. A control interface connector is soldered to the outer wall of the housing and is used to receive a first control signal and a second control signal.

6. The ultra-short wave power amplifying device according to claim 5, wherein The input port and output port are respectively equipped with connectors and are respectively located at opposite ends of the box body. The power supply interface connector and the control interface connector are located at the end of the box body perpendicular to the input port connector.

7. The ultrashort wave power amplifier device according to claim 2, wherein The diodes are PIN diodes, and the multiple filters are elliptical low-pass filters.

8. The ultrashort wave power amplifier according to Claim 1, wherein It also includes a circuit board, on which the power amplifier, filter bank and filter switch matrix are integrated. The circuit board is fixed to the housing by soldering.

9. A communication device, characterized by Includes the ultra-shortwave power amplifier as described in any one of claims 1-8.

10. The communication device of claim 9, wherein, The application further comprises a first power supply, a second power supply, a first control signal and a second control signal, the first power supply and the second power supply supply power to the ultra-short wave power amplifier device, and the first control signal and the second control signal are electrically connected with the control circuit.

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