Process equipment for semiconductors

Abstract

The utility model provides a kind of process equipment of semiconductor, be located between ultraviolet light source and wafer, for the upper space of closed wafer.Process equipment of semiconductor includes main part, dielectric window, uniform gas module and at least two groups of process gas pipeline.First installation space and second installation space of being arranged up and down are equipped in main part.Dielectric window is clamped in first installation space, for the upper space of closed second installation space.Uniform gas module is clamped in second installation space.At least two groups of process gas pipeline are respectively arranged in the two sides of main part, including at least two output ends below dielectric window, output end is communicated with uniform gas module.Process gas pipeline is all used to transport process gas to uniform gas module, and ultraviolet emitted by ultraviolet light source is successively shot after passing through dielectric window and uniform gas module.Compared with prior art, the utility model is distributed by clamping dielectric window, uniform gas module in the first installation space and the second installation space of main part, and structure is compact.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, and in particular to a semiconductor process equipment. Background Technology

[0002] In the field of semiconductor chemical vapor deposition, ultraviolet (UV) curing is a commonly used curing method. This technology utilizes the energy of ultraviolet light to trigger chemical reactions in thin film materials, transforming them from a liquid or semi-solid state into a rigid solid film. UV curing offers advantages such as fast curing speed, no need for heat treatment, and energy savings. It is widely used in the manufacture of semiconductor devices, optical thin films, and coatings.

[0003] In ultraviolet (UV) curing technology, semiconductor process equipment is typically used to transmit and protect the UV light. Generally, a quartz window is installed at the top of the process chamber where the UV curing process takes place to seal the chamber and ensure a vacuum environment. Simultaneously, to achieve better process results, a gas equalization window is placed between the quartz window and the substrate to even out the process gas. An UV light source is positioned above the quartz window to radiate ultraviolet light onto the wafer on the substrate through the quartz window and the gas equalization window.

[0004] Because the functional modules are separated, the light transmission and ventilation functions are achieved by multiple independent components, making it impossible to reuse structural space and resulting in wasted space. For example, using a separate design for quartz windows and ventilation windows increases the height of the equipment and occupies more space.

[0005] In view of this, it is indeed necessary to propose a semiconductor process equipment to solve the above problems. Utility Model Content

[0006] The purpose of this invention is to provide a semiconductor process equipment that integrates light transmission and gas uniformity.

[0007] Therefore, the present invention provides a semiconductor process apparatus, disposed between an ultraviolet light source and a wafer, for sealing the upper space of the wafer; comprising: The main body has a first installation space and a second installation space arranged vertically. A medium window, sandwiched in the first installation space, is used to enclose the upper space of the second installation space; The air distribution module is clamped in the second installation space; At least two sets of process gas pipelines are respectively located on both sides of the main body, including at least two output ends located below the medium window, and the output ends are connected to the gas distribution module; wherein, The process gas pipelines are all used to deliver process gas to the gas equalization module. The ultraviolet light emitted by the ultraviolet light source passes through the medium window and the gas equalization module in sequence before being emitted.

[0008] Optionally, the medium window is a quartz window, and the gas equalization module includes at least two sets of quartz gas equalization disks.

[0009] Optionally, the gas equalization module includes a first quartz gas equalization plate and a second quartz gas equalization plate arranged vertically. The first quartz gas equalization plate is provided with multiple sets of first spray holes, and the second quartz gas equalization plate is provided with multiple sets of second spray holes. The diameter of the first spray hole is less than or equal to the diameter of the second spray hole.

[0010] Optionally, the main body includes a first fixing ring, a first air equalizing ring, a second air equalizing ring, and a second fixing ring arranged vertically. The first fixing ring and the first air equalizing ring form a first installation space, and the first air equalizing ring, the second air equalizing ring, and the second fixing ring form a second installation space.

[0011] Optionally, the gas equalization module includes a first quartz gas equalization disk and a second quartz gas equalization disk arranged vertically. The first quartz gas equalization disk is sandwiched between the first gas equalization ring and the second gas equalization ring, and the second quartz gas equalization disk is sandwiched between the second gas equalization ring and the second fixing ring.

[0012] Optionally, the inner side of the first fixing ring is provided with a first edge portion extending toward the first air equalization ring, and the inner side of the first air equalization ring is provided with a second edge portion. The second edge portion extends from the first air equalization ring in a direction away from the first air equalization ring. The second edge portion is used to support the medium window, and the side of the medium window away from the second edge portion abuts against the first edge portion.

[0013] Optionally, a first annular groove is formed on the side of the first edge facing the first gas equalization ring, and a second annular groove is formed on the side of the second edge facing the first fixing ring. A sealing ring is installed in both the first and second annular grooves to fill the installation gap between the medium window and the first fixing ring.

[0014] Optionally, a third annular groove corresponding to the second annular groove is formed on the side of the second edge portion facing the second gas equalization ring, and a third edge portion is formed on the inner side of the second gas equalization ring. The third edge portion extends from the second gas equalization ring in a direction away from the second gas equalization ring, and a fourth annular groove is formed on the side of the third edge portion facing the first gas equalization ring. A sealing ring is installed in both the third annular groove and the fourth annular groove to fill the installation gap between the first quartz gas equalization disk and the first and second gas equalization rings.

[0015] Optionally, a fifth annular groove corresponding to the fourth annular groove is provided on the side of the third edge facing the second fixing ring, and a fourth edge is provided on the inner side of the second fixing ring. The fourth edge extends from the second fixing ring in a direction away from the second fixing ring, and a sixth annular groove is provided on the side of the fourth edge facing the second gas equalization ring. Sealing rings are installed in both the fifth and sixth annular grooves to fill the installation gap between the second quartz gas equalization plate, the second gas equalization ring, and the second fixing ring.

[0016] Optionally, one of the two sets of process gas pipelines is connected to the second edge portion, and the other set is connected to the third edge portion; multiple sets of first vent holes connected to the gas equalization module are arranged around the inner wall of the second edge portion, and multiple sets of second vent holes connected to the gas equalization module are arranged around the inner wall of the third edge portion.

[0017] Compared with the prior art, the technical solution of the embodiments of this utility model has the following beneficial effects: This invention relates to semiconductor process equipment that integrates a dielectric window and a gas homogenizing module within the first and second mounting spaces of the main body. In other words, the dielectric window and the gas homogenizing module are stacked vertically, resulting in a compact structure that effectively reduces equipment height and is suitable for compact machines. Each set of process gas pipelines employs an independent gas path, supporting simultaneous / time-sharing injection of different reactive gases. While the process gas pipelines deliver process gas to the gas homogenizing module for homogenization, ultraviolet light can penetrate the dielectric window and the gas homogenizing module to irradiate the wafer, shortening the process cycle. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the structure of a semiconductor process equipment conforming to a preferred embodiment of the present utility model; Figure 2 yes Figure 1 A sectional view; Figure 3 This is a schematic diagram of the structure of the first fixing ring conforming to the preferred embodiment of this utility model; Figure 4 This is a schematic diagram of the structure of the first gas-equalizing ring conforming to the preferred embodiment of the present utility model; Figure 5 yes Figure 4 A sectional view; Figure 6 yes Figure 4 A structural diagram from another angle; Figure 7 This is a schematic diagram of the structure of the second gas-equalizing ring conforming to the preferred embodiment of this utility model; Figure 8 yes Figure 7 A structural diagram from another angle; Figure 9 This is a schematic diagram of the structure of the second fixing ring conforming to the preferred embodiment of this utility model; Figure 10 yes Figure 1 Exploded view of the installation of process equipment in China's semiconductor industry.

[0019] The components in the attached diagram are labeled as follows: Main body 1, first installation space 11, second installation space 12, first process gas pipeline 13, first air inlet 131, first air outlet 132, second process gas pipeline 14, second air inlet 141, second air outlet 142, first fixing ring 15, first edge portion 151, first annular groove 1511, installation port 152, first gas equalization ring 16, top wall 161, annular portion 162, second edge portion 163, first gas equalization groove 1631, first vent hole 1632, second annular groove 1633, third annular groove 1634, second gas equalization ring 17, connecting through hole 171, second gas equalization groove 172, third edge portion 173, second vent hole 1731, fourth annular groove 1732, fifth annular groove 1733, second fixing ring 18, fourth edge portion 181, sixth annular groove 1811, sealing ring 19; Medium window 2; gas equalization module 3, first quartz gas equalization disk 31, first spray hole 311, second quartz gas equalization disk 32, second spray hole 321; Semiconductor process equipment 100. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be described in detail below with reference to the accompanying drawings and specific embodiments.

[0021] It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and / or processing steps closely related to the present invention are shown in the accompanying drawings, while other details that are not closely related to the present invention are omitted.

[0022] Additionally, it should be noted that the terms “comprising,” “including,” or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0023] Please see Figures 1 to 10 As shown, an embodiment of this utility model provides a semiconductor process apparatus 100, disposed between an ultraviolet light source (not shown) and a wafer (not shown), for sealing the upper space of the wafer. The semiconductor process apparatus 100 includes a main body 1, a dielectric window 2, a gas equalization module 3, and at least two sets of process gas pipes. The main body 1 has a first mounting space 11 and a second mounting space 12 arranged vertically. The dielectric window 2 is sandwiched in the first mounting space 11 to seal the upper space of the second mounting space 12, thereby achieving a vacuum environment. The gas equalization module 3 is sandwiched in the second mounting space 12.

[0024] In this embodiment, two sets of process gas pipelines are provided on both sides of the main body 1. The process gas pipelines are used to supply process gas to the gas equalization module 3. Both the dielectric window 2 and the gas equalization module 3 are transparent to ultraviolet light. Ultraviolet light emitted by the ultraviolet light source passes through the dielectric window 2 and the gas equalization module 3 in sequence and then shines out, radiating ultraviolet light onto the wafer. By installing the dielectric window 2 and the gas equalization module 3 in the first mounting space 11 and the second mounting space 12 stacked vertically, respectively, the semiconductor process equipment 100 can simultaneously achieve gas equalization and ultraviolet light transmission (curing) by transmitting ultraviolet light through the dielectric window 2 and by equalizing the process gas introduced through the process gas pipelines via the gas equalization module 3, thereby improving work efficiency. In addition, the semiconductor process equipment 100 integrates the dielectric window 2 and the gas equalization module 3 into one unit, which is compact and can save machine space.

[0025] In other implementations, three or four sets of process gas pipelines can be set up according to the required process; no restrictions are set here.

[0026] Furthermore, to ensure that the medium window 2 and the gas equalization module 3 can transmit ultraviolet light effectively, quartz is selected as the material for both. The medium window 2 is a quartz window, and the gas equalization module 3 includes at least two sets of quartz gas equalization discs. Quartz material has high ultraviolet transmittance. In this embodiment, both the quartz window and the quartz gas equalization discs are made of synthetic fused silica (low hydroxyl content), with a transmittance of over 90%. Moreover, fused silica is easy to process.

[0027] In other embodiments, if the requirement for ultraviolet transmittance is not high, the quartz window and the quartz gas distribution plate can also be made of ordinary fused quartz (containing hydroxyl groups).

[0028] In other embodiments, the gas equalization module 3 may also be equipped with two, three, or four sets of quartz gas equalization disks as required to adjust the uniformity of the gas.

[0029] Please see Figure 1 , Figure 2 and Figure 10 As shown, the main body 1 includes a first fixing ring 15, a first air equalization ring 16, a second air equalization ring 17, and a second fixing ring 18, which are arranged vertically and fixedly connected. A first installation space 11 is formed between the first fixing ring 15 and the first air equalization ring 16, and a second installation space 12 is formed between the first air equalization ring 16, the second air equalization ring 17, and the second fixing ring 18.

[0030] Preferably, the first fixing ring 15, the first air-regulating ring 16, the second air-regulating ring 17, and the second fixing ring 18 are all made of aluminum alloy. The main body 1 is entirely made of aluminum alloy, which has excellent heat dissipation and corrosion resistance. Furthermore, the excellent machinability of aluminum alloy, such as its machinability and formability, allows for the precision manufacturing of complex ring structures, facilitating processing. Moreover, aluminum alloy has a density only one-third that of stainless steel, significantly reducing the overall weight of the equipment while maintaining structural strength, thus achieving lightweight design.

[0031] Please see Figure 3 As shown, the top surface of the first fixing ring 15 has two symmetrically arranged mounting openings 152. The inner side of the first fixing ring 15 has a first edge portion 151 extending towards the first air distribution ring 16. In this embodiment, the first edge portion 151 can be formed as a ring-shaped structure with a preset shape. The first edge portion 151 is an annular flange formed by extending downward from the first fixing ring 15 in a direction away from the first fixing ring 15.

[0032] A first annular groove 1511 is formed on the side of the first edge portion 151 facing the first gas equalization ring 16. A sealing ring 19 is installed in the first annular groove 1511. The sealing ring 19 is compressed by the first fixing ring 15. The sealing ring 19 can be used to protect the quartz window and improve the sealing performance to effectively prevent gas leakage.

[0033] Please see Figures 4 to 6 As shown, the first gas equalization ring 16 is fixed below the first fixing ring 15. The first gas equalization ring 16 and the first fixing ring 15 are connected by means of pins, threads, screws, etc. The first gas equalization ring 16 includes a top wall 161 and an annular portion 162 extending from the top wall 161 in a direction away from the top wall 161. The projected area of ​​the top wall 161 is larger than the projected area of ​​the annular portion 162. The shape of the top wall 161 matches that of the first fixing ring 15.

[0034] Preferably, the two process gas pipelines can sequentially introduce two different process gases required for the deposition reaction at different times according to different process requirements. Alternatively, the two process gas pipelines can introduce the same gas at different locations into the gas homogenizing module 3 at different flow rates, thereby achieving precise and flexible control of the mixing ratio of the two identical or different gases. This high control accuracy greatly improves the uniformity of chemical vapor deposition processes, such as etching and coating. Each of the two sets of process gas pipelines has two output ends located below the dielectric window 2. Both output ends are connected to the gas homogenizing module 3 and are used to output process gas to the gas homogenizing module 3.

[0035] Specifically, the two sets of process gas pipelines are a first process gas pipeline 13 and a second process gas pipeline 14. The first process gas pipeline 13 includes a first inlet 131 protruding from the top wall 161 and a first outlet 132 located on the bottom surface of the annular portion 162. The first inlet 131 corresponds to the first outlet 132. The first inlet 131 is used to connect to the process gas introduced from the outside.

[0036] The second process gas conduit 14 includes a second inlet 141 protruding from the top wall 161 at one end and a second outlet 142 located on the bottom surface of the annular portion 162. The second inlet 141 corresponds to the second outlet 142. The second outlet 142 is used to connect to externally introduced process gas. The shapes of the first inlet 131 and the second inlet 141 match the mounting ports 152. The first inlet 131 and the second inlet 141 are respectively installed in the two mounting ports 152 of the first fixing ring 15, maintaining the surface of the first fixing ring 15 flat.

[0037] The first air distribution ring 16 has a second edge portion 163 on its inner side, that is, the second edge portion 163 is located on the inner side of the annular portion 162. The second edge portion 163 extends from the annular portion 162 in a direction away from the annular portion 162. The second edge portion 163 is used to support the medium window 2. The side of the medium window 2 away from the second edge portion 163 abuts against the first edge portion 151.

[0038] A first gas equalization groove 1631 is formed at the bottom of the second edge portion 163 on the side near the annular portion 162. A first gas outlet 132 is connected to the first gas equalization groove 1631. The first gas outlet 132 is the output end of the first process gas pipeline 13. The gas introduced into the first process gas pipeline 13 enters the first gas equalization groove 1631 through the first gas outlet 132, where it can diffuse and buffer along the circumference of the groove, eliminating initial airflow turbulence and achieving uniform mixing. Multiple sets of first vent holes 1632, which are connected to the gas equalization module 3, are arranged circumferentially on the inner wall of the second edge portion 163. Furthermore, all sets of first vent holes 1632 are connected to the first gas equalization groove 1631. The gas in the first gas equalization groove 1631 is radially introduced into the gas equalization module 3 through the multiple evenly distributed first vent holes 1632 on the inner wall, achieving dual pressure equalization of the gas in both the circumferential and radial directions. In other words, the first gas outlet 132 is connected to the gas equalization module 3 through the first gas equalization groove 1631.

[0039] A second annular groove 1633 is formed on the side of the second edge portion 163 facing the first fixing ring 15, and a third annular groove 1634 corresponding to the second annular groove 1633 is formed on the side of the second edge portion 163 facing the second gas equalization ring 17. Sealing rings 19 are installed in both the first annular groove 1511 and the second annular groove 1633. When compressed, the sealing rings 19 tightly fit the medium window 2 and the first fixing ring 15, filling the installation gap between the medium window 2 and the first fixing ring 15 to form a sealed space. The sealing ring 19 in the second annular groove 1633 blocks the upward leakage path of the process gas, and the sealing ring 19 in the third annular groove 1634 blocks the downward leakage path of the gas, forming a double-stage sealing barrier between the medium window 2 and the first quartz gas equalization plate 31. This achieves zero gas leakage and a vacuum environment. Simultaneously, the flexible sealing rings 19 can also eliminate the stress generated by the thermal expansion / vibration of the quartz window, preventing cracking of brittle materials.

[0040] Please see Figure 7 , Figure 8 and Figure 10 As shown, the second gas equalization ring 17 is fixed below the first gas equalization ring 16. The top of the second gas equalization ring 17 has a connecting through hole 171 corresponding to the second gas outlet 142. The connecting through hole 171 communicates with the second gas outlet 142. Preferably, a sealing groove is provided at the second gas outlet 142, and an O-ring is installed in the sealing groove to improve the sealing performance of the connection between the connecting through hole 171 and the second gas outlet 142. The bottom of the second gas equalization ring 17 also has a second gas equalization groove 172. The second gas equalization groove 172 communicates with the connecting through hole 171, and the gas introduced by the second process gas pipeline 14 sequentially enters the second gas equalization groove 172 from the second gas outlet 142 and the connecting through hole 171. The inner side of the second gas equalization ring 17 has a third edge portion 173, which extends from the second gas equalization ring 17 in a direction away from the second gas equalization ring 17. Multiple sets of second vent holes 1731, communicating with the gas equalization module 3, are arranged circumferentially around the inner wall of the third edge portion 173. Furthermore, a second gas equalization groove 172 is located between the outer peripheral wall of the second gas equalization ring 17 and the third edge portion 173. Gas from the second gas equalization groove 172 flows into the gas equalization module 3 through the second vent holes 1731. Gas from the second process gas pipe 14 enters the second gas equalization groove 172 through the connecting hole 171, mixes evenly, and then flows from the second vent hole 1731 to the second quartz gas equalization disk 32 in the gas equalization module 3. The output end of the second process gas pipe 14 is the second outlet 142. In other words, the output end of the second process gas pipe 14 is connected to the gas equalization module 3 through the second gas equalization groove 172, supplying process gas to the gas equalization module 3. The gas path of the second process gas pipe 14 is completely isolated from the gas path of the first process gas pipe 13, enabling time-sharing injection of different process gases and avoiding cross-contamination caused by premixing.

[0041] A fourth annular groove 1732 is provided on the side of the third edge portion 173 facing the first air distribution ring 16, and a fifth annular groove 1733 corresponding to the fourth annular groove 1732 is provided on the side of the third edge portion 173 facing the second fixing ring 18.

[0042] Please see Figures 9 to 10 As shown, the second fixing ring 18 is fixed below the second air distribution ring 17. A fourth edge portion 181 is provided on the inner side of the second fixing ring 18, extending from the second fixing ring 18 in a direction away from it. A sixth annular groove 1811 is provided on the side of the fourth edge portion 181 facing the second air distribution ring 17. Sealing rings 19 are installed in both the fifth annular groove 1733 and the sixth annular groove 1811.

[0043] Please see Figure 2 and Figure 10 As shown, the gas equalization module 3 includes a first quartz gas equalization disk 31 and a second quartz gas equalization disk 32 arranged vertically. The first quartz gas equalization disk 31 is sandwiched between a first gas equalization ring 16 and a second gas equalization ring 17. One end of the first quartz gas equalization disk 31 abuts against a second edge portion 163, and the other end of the first quartz gas equalization disk 31 abuts against a third edge portion 173. Specifically, a first limiting groove is formed between the third annular groove 1634 of the first gas equalization ring 16 and the fourth annular groove 1732 of the second gas equalization ring 17 for mounting the edge of the first quartz gas equalization disk 31. Sealing rings 19 are installed in both the third annular groove 1634 and the fourth annular groove 1732. The sealing rings 19 are compressed in a controlled manner, which can evenly distribute the assembly stress and offset the micro-cracks caused by the stress contact of the first quartz gas equalization disk 31. Sealing rings 19 are installed in both the third annular groove 1634 and the fourth annular groove 1732 to fill the installation gap between the first quartz gas equalization plate 31 and the first limiting groove, thereby improving airtightness and preventing process gas leakage. Furthermore, when the temperature rises, the sidewalls of the third annular groove 1634 and the fourth annular groove 1732 actively press against the sealing rings 19 to compensate for the expansion difference between quartz and metal, thus improving the sealing performance.

[0044] Similarly, sealing rings 19 are installed between the second annular groove 1633 and the third annular groove 1634 to fill the gap between the first quartz gas equalization plate 31 and the medium window 2, forming a well-sealed first gas equalization chamber between the first quartz gas equalization plate 31 and the medium window 2. The gas introduced through the first process gas pipeline 13 enters the first gas equalization groove 1631 through the first gas outlet 132 and mixes evenly. The gas in the first gas equalization groove 1631 enters the first gas equalization chamber through the first vent hole 1632. That is, the first gas outlet 132 is connected to the first gas equalization chamber in the gas equalization module 3 through the first gas equalization groove 1631.

[0045] The second quartz gas equalizing disk 32 is sandwiched between the second gas equalizing ring 17 and the second fixing ring 18. One end of the second quartz gas equalizing disk 32 abuts against the third edge portion 173, and the other end of the second quartz gas equalizing disk 32 abuts against the fourth edge portion 181. Specifically, a second limiting groove is formed between the fifth annular groove 1733 of the second gas equalizing ring 17 and the sixth annular groove 1811 of the second fixing ring 18 for mounting the edge of the second quartz gas equalizing disk 32. Sealing rings 19 are installed in both the fifth annular groove 1733 and the sixth annular groove 1811 to fill the installation gap between the second quartz gas equalizing disk 32 and the second gas equalizing ring 17 and the second fixing ring 18, thereby achieving a non-destructive contact seal between the second quartz gas equalizing disk 32 and the second gas equalizing ring 17 and the second fixing ring 18 to seal the process gas and protect the second quartz gas equalizing disk 32.

[0046] Similarly, sealing rings 19 are installed in the fourth annular groove 1732 and the fifth annular groove 1733 to fill the gap between the first quartz gas equalization disk 31 and the second quartz gas equalization disk 32, forming a well-sealed second gas equalization chamber between the first quartz gas equalization disk 31 and the second quartz gas equalization disk 32 to ensure zero leakage of process gas. The gas introduced by the second process gas pipeline 14 enters the second gas equalization groove 172 through the second gas outlet 142. After pre-diffusion in the second gas equalization groove 172, the gas enters the second gas equalization chamber through the second vent hole 1731. That is to say, the second gas outlet 142 is connected to the second gas equalization chamber in the gas equalization module 3 through the second gas equalization groove 172.

[0047] Furthermore, the first quartz gas equalization disk 31 is provided with multiple sets of first spray holes 311, through which gas in the first gas equalization chamber flows into the second gas equalization chamber. The first process gas pipe 13 enters the first gas equalization chamber through a first vent hole 1632 located at the outer edge of the first quartz gas equalization disk 31. The distribution of the first spray holes 311 is stepped, densely distributed in the area near the center of the first quartz gas equalization disk 31, and sparsely distributed in the area away from the center of the first quartz gas equalization disk 31. This arrangement can counteract the distribution defect of concentrated gas at the edge and sparse gas at the center caused by gas entering from the edge of the first quartz gas equalization disk 31, and achieve active radial gas concentration equalization.

[0048] The second quartz gas equalization disk 32 is provided with multiple sets of second spray holes 321, which are used to discharge the gas in the second gas equalization chamber into the reaction chamber. The distribution of the second spray holes 321 is stepped, with a dense distribution in the area near the center of the second quartz gas equalization disk 32 and a sparse distribution in the area away from the center of the second quartz gas equalization disk 32.

[0049] Preferably, the diameter of the first spray hole 311 is less than or equal to the diameter of the second spray hole 321. The smaller diameter of the first spray hole 311 increases the upstream flow resistance, forcing the gas to diffuse fully within the first gas equalization chamber; the larger diameter of the second spray hole 321 reduces the downstream flow resistance, preventing the formation of local high-pressure zones above the wafer, thereby eliminating the "concentrated at the center and thin at the edge" distribution defect of traditional single-stage spraying. Furthermore, the number of first spray holes 311 is less than the number of second spray holes 321. The fewer number of small-diameter first spray holes 311 can prolong the gas residence time in the first gas equalization chamber, completing the initial pressure equalization; the more numerous large-diameter second spray holes 321 achieve high-speed uniform output, avoiding gas pressure pulsation, and thus achieving stepwise gas uniform flow.

[0050] In summary, the semiconductor process equipment 100 of this invention integrates the dielectric window 2 and the gas equalization module 3 by distributing them between the first mounting space 11 and the second mounting space 12 of the main body 1, i.e., stacking the dielectric window 2 and the gas equalization module 3 vertically. This results in a compact structure that effectively reduces equipment height and is suitable for compact machines. Each set of process gas pipelines uses an independent gas path, supporting simultaneous / time-sharing injection of different reactive gases. While the process gas pipelines deliver process gas into the gas equalization module 3 for equalization, ultraviolet light can penetrate the dielectric window 2 and the gas equalization module 3 to irradiate the wafer, shortening the process cycle.

[0051] The above embodiments are only used to illustrate the technical solutions of this utility model and are not intended to limit it. Although this utility model has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of this utility model without departing from the spirit and scope of the technical solutions of this utility model.

Claims

1. A semiconductor process apparatus, disposed between an ultraviolet light source and a wafer, for enclosing the upper space of the wafer; characterized in that, include: The main body (1) has a first installation space (11) and a second installation space (12) arranged vertically inside. A medium window (2) is sandwiched in the first installation space (11) to enclose the upper space of the second installation space (12); The gas equalization module (3) is sandwiched in the second installation space (12); At least two sets of process gas pipelines are respectively located on both sides of the main body (1), including at least two output ends located below the medium window (2), and the output ends are connected to the gas equalization module (3); wherein, The process gas pipelines are all used to deliver process gas to the gas equalization module (3). The ultraviolet light emitted by the ultraviolet light source passes through the medium window (2) and the gas equalization module (3) in sequence before being emitted.

2. The semiconductor process equipment according to claim 1, characterized in that, The medium window (2) is a quartz window, and the gas equalization module (3) includes at least two sets of quartz gas equalization disks.

3. The semiconductor process equipment according to claim 2, characterized in that, The gas equalization module (3) includes a first quartz gas equalization plate (31) and a second quartz gas equalization plate (32) arranged vertically. The first quartz gas equalization plate (31) is provided with multiple sets of first spray holes (311), and the second quartz gas equalization plate (32) is provided with multiple sets of second spray holes (321). The diameter of the first spray hole (311) is less than or equal to the diameter of the second spray hole (321).

4. The semiconductor process equipment according to claim 1, characterized in that, The main body (1) includes a first fixing ring (15), a first air equalization ring (16), a second air equalization ring (17), and a second fixing ring (18) arranged vertically. The first fixing ring (15) and the first air equalization ring (16) form the first installation space (11), and the first air equalization ring (16), the second air equalization ring (17), and the second fixing ring (18) form the second installation space (12).

5. The semiconductor process equipment according to claim 4, characterized in that, The gas equalization module (3) includes a first quartz gas equalization disk (31) and a second quartz gas equalization disk (32) arranged vertically. The first quartz gas equalization disk (31) is sandwiched between the first gas equalization ring (16) and the second gas equalization ring (17), and the second quartz gas equalization disk (32) is sandwiched between the second gas equalization ring (17) and the second fixing ring (18).

6. The semiconductor process equipment according to claim 5, characterized in that, The inner side of the first fixing ring (15) is provided with a first edge portion (151) extending toward the first air equalization ring (16), and the inner side of the first air equalization ring (16) is provided with a second edge portion (163). The second edge portion (163) extends from the first air equalization ring (16) in a direction away from the first air equalization ring (16). The second edge portion (163) is used to support the medium window (2). The side of the medium window (2) away from the second edge portion (163) abuts against the first edge portion (151).

7. The semiconductor process equipment according to claim 6, characterized in that, A first annular groove (1511) is provided on the side of the first edge portion (151) facing the first gas equalization ring (16), and a second annular groove (1633) is provided on the side of the second edge portion (163) facing the first fixing ring (15). A sealing ring (19) is installed in both the first annular groove (1511) and the second annular groove (1633) to fill the installation gap between the medium window (2) and the first fixing ring (15).

8. The semiconductor process equipment according to claim 7, characterized in that, The second edge portion (163) has a third annular groove (1634) corresponding to the second annular groove (1633) on the side facing the second gas equalizing ring (17). The second gas equalizing ring (17) has a third edge portion (173) on the inner side. The third edge portion (173) extends from the second gas equalizing ring (17) in a direction away from the second gas equalizing ring (17). The third edge portion (173) has a fourth annular groove (1732) on the side facing the first gas equalizing ring (16). Sealing rings (19) are installed in both the third annular groove (1634) and the fourth annular groove (1732) to fill the installation gap between the first quartz gas equalizing disk (31) and the first gas equalizing ring (16) and the second gas equalizing ring (17).

9. The semiconductor process equipment according to claim 8, characterized in that, The third edge portion (173) has a fifth ring groove (1733) corresponding to the fourth ring groove (1732) on the side facing the second fixing ring (18). The inner side of the second fixing ring (18) has a fourth edge portion (181). The fourth edge portion (181) extends from the second fixing ring (18) in a direction away from the second fixing ring (18). The fourth edge portion (181) has a sixth ring groove (1811) on the side facing the second gas equalization ring (17). Sealing rings (19) are installed in both the fifth ring groove (1733) and the sixth ring groove (1811) to fill the installation gap between the second quartz gas equalization plate (32), the second gas equalization ring (17), and the second fixing ring (18).

10. The semiconductor process equipment according to claim 8, characterized in that, One of the two sets of process gas pipelines is connected to the second edge portion (163), and the other set is connected to the third edge portion (173); multiple sets of first vent holes (1632) connected to the gas equalization module (3) are arranged around the inner wall of the second edge portion (163), and multiple sets of second vent holes (1731) connected to the gas equalization module (3) are arranged around the inner wall of the third edge portion (173).

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