Single-tube power device, single-channel half-bridge module and multi-channel parallel half-bridge module

Abstract

The utility model relates to the technical field of power electronic device, especially a single -tube power device, single -path half bridge module and multichannel parallel half bridge module are provided. The single -tube power device includes insulating plastic sealing body, single -tube pad assembly at one side of insulating plastic sealing body and chip assembly encapsulated in the inside of insulating plastic sealing body and with single -tube pad assembly electric connection, the chip assembly includes carrier and power chip, the side board surface welding of power chip is on the side board surface of carrier. The single -tube power device of the utility model, the welding together between power chip and carrier, thereby make the reliable connection of the upper surface conductor of carrier and the side signal terminal of power chip, be used for conducting large current and heat conduction. And weld power chip to the carrier, can rely on the rigidity of carrier, power chip is not easy to deform and fracture when bearing external pressure.

Description

Technical Field

[0001] This utility model belongs to the field of power electronic device technology, and specifically relates to a single-tube power device, a single-channel half-bridge module, and a multi-channel parallel half-bridge module. Background Technology

[0002] With the maturation of third-generation wide-bandgap semiconductor technology based on wide-bandgap semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN), the application scenarios for semiconductor power devices are becoming increasingly diverse. Most existing semiconductor power device packaging processes involve first constructing the chip current loop through bonding wires and copper-to-copper clip soldering, and then injection molding or potting the connected power device module. Existing power device modules suffer from high stray inductance; for example, in automotive and power supply applications, the inductance of existing power device modules is between 5 and 15 nH.

[0003] Because third-generation wide-bandgap semiconductors can switch very quickly, the switching current rate is typically controlled within the range of 20~40A / ns to reduce switching losses. However, existing power device modules suffer from excessive inductance, which can generate voltage spikes and compromise the safety of the circuit system.

[0004] Therefore, in order to fully leverage the advantages of third-generation wide-bandgap semiconductors, a new packaging technology is needed to reduce the stray inductance of the module by 1~2nH. Utility Model Content

[0005] To address the above problems, this utility model provides a single-tube power device, which includes an insulating plastic package, a single-tube pad assembly located on one side of the insulating plastic package, and a chip assembly encapsulated inside the insulating plastic package and electrically connected to the single-tube pad assembly. The chip assembly includes a carrier and a power chip; one side of the power chip is soldered to one side of the carrier, and the signal terminals on that side of the power chip are electrically connected to the carrier; the signal terminals on the other side of the power chip and the carrier are electrically connected to a single-tube pad assembly via a first connecting conductor; the single-tube pad assembly, the power chip, and the first connecting conductor are all located on the same side of the carrier. The side of the carrier furthest from the single-tube pad assembly is exposed outside the insulating plastic casing for mounting the heat sink.

[0006] Furthermore, the carrier adopts a copper-clad insulating substrate, which includes an upper metal layer, an insulating plate and a lower metal layer stacked in sequence; one side of the power chip is bonded to the upper metal layer, and the signal terminals on this side of the power chip are electrically connected to the upper metal layer.

[0007] Furthermore, one side of the power chip is welded to the upper metal layer of the carrier, and the drain signal terminal on that side of the power chip is electrically connected to the upper metal layer; the other side of the power chip is provided with a source signal terminal and a gate signal terminal. The single-tube pad assembly includes a first pad, a second pad, and a third pad that are insulated from each other; the first pad is electrically connected to the upper metal layer through a corresponding first connecting conductor; the second pad is electrically connected to the source signal terminal of the power chip through a corresponding first connecting conductor; and the third pad is electrically connected to the gate signal terminal of the power chip through a corresponding first connecting conductor.

[0008] Furthermore, the first pad, the second pad, and the third pad are arranged adjacent to each other; the second pad is aligned with the source signal terminal on the power chip; the first pad is aligned with the portion of the upper metal layer not covered by the power chip; and the third pad is aligned with the gate signal terminal on the power chip.

[0009] Furthermore, the first connecting conductor may employ a metal via structure; The first pad, the second pad, and the third pad are respectively electrically connected to the first connecting conductor of the upper metal layer with the same or similar axial dimensions.

[0010] This utility model also provides a single-channel half-bridge module, which includes a multilayer circuit board and two of the above-mentioned single-transistor power devices. The stacked circuit board includes a circuit board pad assembly, an insulating layer, and an I / O terminal assembly stacked sequentially; the I / O terminal assembly and the circuit board pad assembly are electrically connected; two single-tube power devices are fixedly connected to the circuit board pad assembly of the stacked circuit board through their respective single-tube pad assemblies.

[0011] Furthermore, the circuit board pad assembly includes a fourth pad, a fifth pad, a sixth pad, and two seventh pads; The fourth and fifth pads are both adjacent to the sixth pad; one seventh pad is located close to the fourth pad, and the other seventh pad is located close to the fifth pad. The fourth pad is used to mate with the first pad of a single-transistor power device belonging to the upper half-bridge; the fifth pad is used to mate with the second pad of another single-transistor power device belonging to the lower half-bridge; the sixth pad is used to mate with both the second pad of the single-transistor power device belonging to the upper half-bridge and the first pad of the single-transistor power device belonging to the lower half-bridge; the seventh pad located near the fourth pad is used to mate with the third pad of the single-transistor power device belonging to the upper half-bridge, and the seventh pad located near the fifth pad is used to mate with the third pad of the single-transistor power device belonging to the lower half-bridge.

[0012] Furthermore, the IO terminal assembly includes a positive terminal, a negative terminal, an AC terminal, and two gate terminals; the positive terminal and the fourth pad are aligned and electrically connected; the negative terminal and the fifth pad are aligned and electrically connected; the AC terminal and a portion of the sixth pad are aligned and electrically connected; and the two gate terminals are correspondingly electrically connected to the two seventh pads.

[0013] Furthermore, the single-path half-bridge module also includes a capacitor; the capacitor is connected in parallel between the positive terminal and the negative terminal.

[0014] This utility model also provides a multi-channel parallel half-bridge module, which includes N of the above-mentioned single-channel half-bridge modules, and the N single-channel half-bridge modules are connected in parallel in sequence, where N is an integer greater than 1. The stacked circuit boards in each single-path half-bridge module are integrated into a single circuit board.

[0015] The beneficial effects of this utility model are: 1. In the single-tube power device proposed in this utility model, the power chip and the carrier are connected together through processes such as tin soldering, nano-silver sintering, or diffusion soldering. This allows for a reliable connection between the upper surface conductor of the carrier and one side signal terminal of the power chip, facilitating the conduction of large currents and heat dissipation. Furthermore, by soldering the power chip onto the carrier, the rigidity of the carrier prevents the power chip from easily deforming or breaking under external pressure; and the thermal capacity of the carrier allows for rapid heat dissipation during short-term high-current surges in the power chip.

[0016] 2. By adding bosses or increasing the copper foil height on the upper metal layer, or by creating a mounting slot for the power chip on the upper metal layer, the aim is to reduce the height of the metal vias between the external circuitry and the chip module in subsequent processes. This avoids the problem of copper plating solution forming on some metal vias due to their excessive height during subsequent electroplating. Ensuring that all metal vias in the power device module have the same or similar height reduces the difficulty of the electroplating process and improves the yield rate.

[0017] 3. Compared with conventional TO247 or T-PACK packaged single-transistor devices, the single-transistor power device provided by this invention is smaller in size, has lower current conduction loss, and improves power density in integrated application scenarios. Moreover, in application scenarios, the single-transistor power device provided in this embodiment can be directly soldered and installed via pads, eliminating the need for bonding wires, copper clip soldering, and other installation methods, and significantly reducing the inductance of the single-transistor power device.

[0018] 4. In the half-bridge module proposed in this utility model, the single-tube pad assembly of the single-tube power device and the circuit board pad assembly of the multilayer circuit board are fixedly connected through sintering or welding processes. The half-bridge module can flexibly realize series and parallel structures to meet the needs of different application scenarios. Moreover, the single-tube power device and the multilayer circuit board are directly connected through pads, eliminating the need for a large number of tooling molds as required by traditional power modules or single tubes, resulting in lower manufacturing difficulty and cost.

[0019] 5. Connect a capacitor in parallel between the positive and negative terminals to absorb voltage spikes during switching and smooth DC voltage.

[0020] 6. The multi-channel parallel half-bridge module provided by this utility model has a simple structure, which can be obtained by simply connecting the single-channel half-bridge modules of the corresponding number of branches in parallel. It is easy to expand and has a wide range of applications.

[0021] Other features and advantages of this invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. The objectives and other advantages of this invention can be realized and obtained through the structures pointed out in the description and the accompanying drawings. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1 A perspective view of a single-tube power device according to an embodiment of the present invention is shown; Figure 2 A bottom view of a single-tube power device according to an embodiment of the present invention is shown; Figure 3 A schematic diagram of the internal structure of a single-tube power device according to an embodiment of the present invention is shown; Figure 4 A schematic diagram of the structure of the copper-clad insulating substrate according to an embodiment of the present invention is shown; Figure 5 A schematic diagram of the pad assembly structure on a single-tube power device according to an embodiment of the present invention is shown; Figure 6 A cross-sectional view of a single-tube power device according to an embodiment of the present invention is shown; Figure 7 This diagram shows a schematic of the copper-clad insulating substrate structure with slotted upper metal layer according to an embodiment of the present invention. Figure 8 This diagram shows a schematic of the copper-clad insulating substrate structure with an integrally formed boss on the upper metal layer according to an embodiment of the present invention. Figure 9 This diagram illustrates a copper-clad insulating substrate structure with an increased copper foil in the upper metal layer, according to an embodiment of the present invention. Figure 10 A side view of a single-channel half-bridge module according to an embodiment of the present invention is shown; Figure 11 A perspective view of a multilayer circuit board according to an embodiment of the present invention is shown; Figure 12 A bottom view of a multilayer circuit board according to an embodiment of the present invention is shown; Figure 13 A schematic diagram of the internal structure of the stacked circuit board according to an embodiment of the present invention is shown; Figure 14 A schematic diagram of the arrangement of the second connecting conductors of the multilayer circuit board according to an embodiment of the present invention is shown; Figure 15 A schematic diagram showing two single-tube power devices arranged side by side according to an embodiment of the present invention is shown; Figure 16 This diagram shows a structural schematic of a single-channel half-bridge module with a capacitor according to an embodiment of the present invention. Figure 17 A schematic diagram of the structure of the multi-channel parallel half-bridge module according to an embodiment of the present invention is shown; Figure 18 A schematic diagram of the stacked circuit board of the multi-channel parallel half-bridge module according to an embodiment of the present invention is shown. Figure 19 A schematic diagram of the arrangement of the second connecting conductor in the multi-parallel half-bridge module of this utility model embodiment is shown; Figure 20 A schematic diagram showing the arrangement of multiple single-tube power devices in a multi-channel parallel half-bridge module according to an embodiment of the present invention is shown. Figure 21 The diagram shows the withstand voltage simulation analysis of a single-channel half-bridge module according to an embodiment of this utility model.

[0024] In the diagram: 10-Single-tube power device; 1-Insulating encapsulation; 2-Single-tube pad assembly; 201-First pad; 202-Second pad; 203-Third pad; 3-Chip assembly; 301-Carrier; 3011-Insulating plate; 3012-Upper metal layer; 30121-Mounting slot; 30122-Boss; 30123-Raised copper foil; 3013-Lower metal layer; 302-Power chip; 303-First connecting conductor; 20-Layer circuit board; 4-Insulating layer board; 5-IO terminal assembly; 501-Positive terminal; 502-Negative terminal; 503-AC terminal; 504-Gate terminal; 6-Circuit board pad assembly; 601-Fourth pad; 602-Fifth pad; 603-Sixth pad; 604-Seventh pad; 7-Second connecting conductor; 8-Capacitor. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0026] Example 1 This utility model embodiment provides a single-transistor power device, such as Figure 1 and Figure 2 As shown, the single-tube power device 10 includes an insulating plastic package 1, a single-tube pad assembly 2 located on one side of the insulating plastic package 1, and a chip assembly 3 encapsulated inside the insulating plastic package 1 and electrically connected to the single-tube pad assembly 2.

[0027] Furthermore, such as Figure 3 As shown, the chip assembly 3 includes a carrier 301 and a power chip 302; one side of the power chip 302 is soldered to one side of the carrier 301, and the signal terminals on that side of the power chip 302 are electrically connected to the carrier 301; the signal terminals on the other side of the power chip 302 and the carrier 301 are electrically connected to the single-tube pad assembly 2 through a first connecting conductor 303; the single-tube pad assembly 2, the power chip 302, and the first connecting conductor 303 are all located on the same side of the carrier 301; the side of the carrier 301 away from the single-tube pad assembly 2 is exposed outside the insulating plastic encapsulation 1 for mounting a heat sink.

[0028] Specifically, the insulating encapsulator 1 may be made of, but is not limited to, polyimide material, epoxy resin molding compound or bismaleimide triazine resin material; the carrier 301 may be made of, but is not limited to, copper block or copper-clad insulating substrate; the power chip 302 may be made of, but is not limited to, silicon carbide (SiC) power chip or gallium nitride (GaN) power chip.

[0029] In this embodiment, the power chip and the carrier are connected together using processes such as soldering, nano-silver sintering, or diffusion soldering. This ensures a reliable connection between the upper surface conductor of the carrier and the signal terminals on one side of the power chip, facilitating the conduction of high current and heat dissipation. Furthermore, soldering the power chip onto the carrier allows it to withstand external pressure without easily deforming or breaking due to the carrier's rigidity; the carrier's thermal capacity enables rapid heat dissipation during short-term high-current surges. Additionally, a heat sink can be directly mounted on one side of the carrier, simplifying the traditional heat sink installation structure for power devices and improving the product's heat dissipation performance.

[0030] Preferably, the carrier 301 is a copper-clad insulating substrate. For example... Figure 3 and Figure 4 As shown, the carrier 301 includes an upper metal layer 3012, an insulating plate 3011, and a lower metal layer 3013 stacked in sequence; one side of the power chip 302 is bonded to the upper metal layer 3012, and the signal terminal on this side of the power chip 302 is electrically connected to the upper metal layer 3012.

[0031] Specifically, the insulating board 3011 can be made of a material with good insulation and thermal conductivity. For example, the insulating board 3011 can be made of, but is not limited to, silicon nitride, aluminum oxide, aluminum nitride, diamond or silicon carbide.

[0032] The upper metal layer 3012 and the lower metal layer 3013 may be made of, but are not limited to, copper.

[0033] It should be noted that the insulating plate in the copper-clad insulating substrate can achieve insulation between the upper metal layer and the lower metal layer. The copper-clad insulating substrate can be, but is not limited to, thin-film copper-clad insulating substrate (TFC), thick-film printed copper-clad insulating substrate (TPC), direct-bonded copper-clad insulating substrate (DBC), direct aluminum-clad copper-clad insulating substrate (DBA), direct electroplated copper-clad insulating substrate (DPC), active metal soldered copper-clad insulating substrate (AMB), direct sputtered copper-clad insulating substrate (DSC), or laser activated metal-clad copper-clad insulating substrate (LAM).

[0034] Thanks to the rigidity of the carrier, the chip is less prone to deformation and breakage when subjected to external pressure; based on the thermal capacity of the carrier, it can quickly dissipate heat when the chip is subjected to short-term high-current surges. Moreover, using a copper-clad insulating substrate as the carrier ensures both insulation between the chip and external conductors and improves the heat dissipation of power devices.

[0035] For example, the insulating encapsulator 1 is made of polyimide material; the power chip 302 is made of silicon carbide power chip (SiC MOSFET); and the carrier 301 is made of copper-clad insulating substrate.

[0036] One side of the power chip 302 is welded to the upper metal layer 3012 of the carrier 301, and the drain signal terminal (D terminal) on this side of the power chip 302 is electrically connected to the upper metal layer 3012. The other side of the power chip 302 is provided with a source signal terminal (S terminal) and a gate signal terminal (G terminal).

[0037] like Figure 5 and Figure 6 As shown, the single-pole pad assembly 2 includes a first pad 201, a second pad 202, and a third pad 203 that are insulated from each other. The first pad 201 is electrically connected to the upper metal layer 3012 through a corresponding first connecting conductor 303; the second pad 202 is electrically connected to the source signal terminal of the power chip 302 through a corresponding first connecting conductor 303; and the third pad 203 is electrically connected to the gate signal terminal of the power chip 302 through a corresponding first connecting conductor 303.

[0038] The first connecting conductor 303 may adopt a metal via structure and be manufactured using an electroplating blind via process.

[0039] Furthermore, the lower metal layer 3013 of the carrier 301 has its side facing away from the power chip 302 exposed outside the insulating molding compound 1. This lower metal layer can be used to mount a heat sink, improving the heat dissipation effect of the power device.

[0040] It should be noted that, depending on the type of power chip, the single-tube pad assembly can use different numbers and sizes of pads to connect the signal terminals of the power chip. Similarly, in order to minimize the size of the single-tube power device, the single-tube pad assembly can be stacked and aligned with the chip assembly, which facilitates the vertical alignment of the first connecting conductor with respect to the power chip board surface, reduces unnecessary structural dimensions, and lowers the manufacturing complexity.

[0041] Specifically, the first pad 201, the second pad 202, and the third pad 203 are arranged adjacent to each other. The second pad 202 is aligned with the source signal terminal on the power chip 302; the first pad 201 is aligned with the portion of the upper metal layer 3012 not covered by the power chip 302; and the third pad 203 is aligned with the gate signal terminal on the power chip 302.

[0042] Preferred, such as Figure 5 As shown, the second pad 202 is provided with a through groove, and the third pad 203 is embedded in the through groove.

[0043] By arranging the pads in a single-tube pad assembly compactly, the overall size of the single-tube functional device can be minimized.

[0044] It should be noted that, in order to ensure reliable electrical connections between components in a single-tube power device and to minimize the overall size of the single-tube functional device, the size and shape of each pad in the single-tube pad assembly can be determined by the size and shape of the corresponding connected signal terminals. For example, if the drain signal terminal on the power chip 302 has a circular cross-section, then the third pad 203 can be set as a circular plate, and both can have the same diameter.

[0045] Furthermore, the first pad 201, the second pad 202, and the third pad 203 are electrically connected to the first connecting conductor 303 of the upper metal layer 3012, and their axial dimensions are the same or similar.

[0046] For example, such as Figure 7 As shown, the upper metal layer 3012 has a mounting groove 30121 on the side away from the insulating plate 3011, which matches the thickness of the power chip 302; one side of the power chip 302 is welded to the bottom of the mounting groove 30121, and the signal terminal on this side of the power chip 302 is electrically connected to the carrier 301.

[0047] For example, such as Figure 8 As shown, a boss 30122 with the same thickness as the power chip 302 is integrally formed on the side of the upper metal layer 3012 away from the insulating plate 3011; one side of the power chip 302 is welded to the area of ​​the upper metal layer 3012 away from the insulating plate 3011 except for the boss 30122, and the signal terminals on this side of the power chip 302 are electrically connected to the upper metal layer 3012; the other side of the power chip 302 is on the same plane as the top surface of the boss 30122.

[0048] For example, such as Figure 9As shown, a raised copper foil 30123 with the same thickness as the power chip 302 is welded to the side of the upper metal layer 3012 away from the insulating plate 3011; one side of the power chip 302 is welded to the area of ​​the upper metal layer 3012 away from the insulating plate 3011, excluding the raised copper foil 30123, and the signal terminals on this side of the power chip 302 are electrically connected to the upper metal layer 3012; the other side of the power chip 302 is on the same plane as the top surface of the raised copper foil 30123.

[0049] Adding bosses or increasing the copper foil height on the upper metal layer, or creating a mounting slot for the power chip in the upper metal layer, aims to reduce the height of the metal vias between the external circuitry and the chip module in subsequent processes. This avoids the problem of copper plating solution forming on some metal vias due to their excessive height during subsequent electroplating. Ensuring that all metal vias in the power device module have the same or similar height reduces the difficulty of the electroplating process and improves the yield rate.

[0050] Compared to conventional TO247 or T-PACK packaged single-transistor devices, the single-transistor power device provided by this invention is smaller in size, has lower current conduction losses, and improves power density in integrated applications. Furthermore, in application scenarios, the single-transistor power device provided in this embodiment uses metal vias to extend the pads, with a connection path length of approximately 0.3mm, and can be directly soldered onto the pads. Because it eliminates the need for bonding wires, copper clip soldering, and other mounting methods, the inductance of the single-transistor power device is significantly reduced, decreasing to approximately 2nH compared to the approximately 5nH stray inductance of a T-PACK package.

[0051] Example 2 This embodiment provides a single-path half-bridge module, such as Figure 10 As shown, the single-path half-bridge module includes a multilayer circuit board 20 and two single-tube power devices 10 as described in Embodiment 1.

[0052] like Figure 11 and Figure 12 As shown, the stacked circuit board 20 includes a circuit board pad assembly 6, an insulating layer 4, and an I / O terminal assembly 5 stacked sequentially; and the I / O terminal assembly 5 and the circuit board pad assembly 6 are electrically connected; two single-tube power devices 10 are fixedly connected to the circuit board pad assembly 6 of the stacked circuit board 20 through their respective single-tube pad assemblies 2.

[0053] The single-tube power device's single-tube pad assembly and the multilayer circuit board's circuit board pad assembly are fixedly connected through sintering or soldering processes. The half-bridge module can flexibly implement series and parallel structures to meet the needs of different application scenarios. Moreover, the single-tube power device and multilayer circuit board provided in this embodiment are directly connected through pads, eliminating the need for extensive tooling and mold customization required by traditional power modules or single tubes, resulting in lower manufacturing difficulty and cost.

[0054] Specifically, such as Figure 13 As shown, the circuit board pad assembly 6 includes a fourth pad 601, a fifth pad 602, a sixth pad 603, and two seventh pads 604; the fourth pad 601 and the fifth pad 602 are both arranged adjacent to the sixth pad 603 in a triangular arrangement; one seventh pad 604 is located close to the fourth pad 601, and the other seventh pad 604 is located close to the fifth pad 602.

[0055] The fourth pad 601 is used to mate with the first pad 201 of a single-transistor power device 10 belonging to the upper half-bridge; the fifth pad 602 is used to mate with the second pad 202 of another single-transistor power device 10 belonging to the lower half-bridge; the sixth pad 603 is used to mate with both the second pad 202 of the single-transistor power device 10 belonging to the upper half-bridge and the first pad 201 of the single-transistor power device 10 belonging to the lower half-bridge; the seventh pad 604, located near the fourth pad 601, is used to mate with the third pad 203 of the single-transistor power device 10 belonging to the upper half-bridge, and the seventh pad 604, located near the fifth pad 602, is used to mate with the third pad 203 of the single-transistor power device 10 belonging to the lower half-bridge.

[0056] Preferably, a through groove is provided on the fifth pad 602 near the sixth pad 603, and a seventh pad 604 is embedded in the through groove; a through groove is also provided on the sixth pad 603 near the fourth pad 601, and another seventh pad 604 is embedded in the through groove.

[0057] The compact arrangement of pads in the circuit board pad assembly and the single-tube pad assembly minimizes the overall size of the half-bridge module.

[0058] It should be noted that the number and size of the pads in the circuit board pad assembly are determined by the number and size of the pads in the single-pipe pad assembly, and the two are matched and connected. This is only an illustrative example, and no specific limitation is made on the number and size of the pads.

[0059] Furthermore, the IO terminal assembly 5 includes a positive terminal 501, a negative terminal 502, an AC terminal 503, and a gate terminal 504. The positive terminal 501 and the fourth pad 601 are positively and electrically connected; the negative terminal 502 and the fifth pad 602 are positively and electrically connected; the AC terminal 503 and a portion of the sixth pad 603 are positively and electrically connected; and the two gate terminals 504 and the two seventh pads 604 are respectively positively and electrically connected.

[0060] It should also be noted that the number and size of the signal terminals in the I / O terminal assembly are determined by the number and size of the pads in the circuit board pad assembly, and the two are matched and connected. This is only an illustrative example, and no specific limitation is made on the number and size of the signal terminals.

[0061] Specifically, such as Figure 14 As shown, the positive terminal 501 and the fourth pad 601 are electrically connected through the second connecting conductor 7 penetrating the insulating layer 4; the negative terminal 502 and the fifth pad 602 are electrically connected through the second connecting conductor 7 penetrating the insulating layer 4; the AC terminal 503 and a portion of the sixth pad 603 are electrically connected through the second connecting conductor 7 penetrating the insulating layer 4; and the two gate terminals 504 and the two seventh pads 604 are respectively electrically connected through the second connecting conductor 7 penetrating the insulating layer 4.

[0062] For example, the second connecting conductor 7 may employ a metal via structure.

[0063] A single-channel half-bridge module is formed by connecting two single-transistor power devices in series using a multilayer circuit board. Furthermore, the signal terminals in the I / O terminal assembly of this half-bridge module are all located on the same side of the insulating layer board, making the half-bridge module structure simpler, more reliable, and easier for subsequent application and installation. Moreover, the ingenious design of the multilayer circuit board allows for the stacking of conductive layers, greatly reducing the stray inductance of the entire half-bridge module.

[0064] Furthermore, the positive terminal 501, negative terminal 502, AC terminal 503, and gate terminal 504 are all plate-shaped conductors.

[0065] The positive terminal, negative terminal, AC terminal, and gate terminal are all located on the same level, which makes it easier to install the half-bridge module in subsequent applications and effectively reduces the size of the half-bridge module.

[0066] Preferably, the gate terminal 504 may have a columnar structure, and the gate terminal 504 may axially penetrate the insulating layer plate 4 and be directly fixedly connected to the seventh pad 604.

[0067] Generally, the gate size on power chips is small. Setting the gate terminal as a columnar structure facilitates the overall structural layout of the half-bridge module and can optimize the manufacturing process and reduce production costs.

[0068] Preferred, such as Figure 14 As shown, the fourth pad 601 and the fifth pad 602 are located on the same side of the sixth pad 603; as Figure 15 As shown, two single-tube power devices 10 are arranged side by side, and the single-tube pad assemblies 2 on the two single-tube power devices 10 are arranged in a centrally symmetrical manner. This arrangement can minimize the size of the sixth pad that is connected to both single-tube power devices, thereby ensuring a reduction in the overall size of the half-bridge module.

[0069] Furthermore, such as Figure 16 As shown, the single-channel half-bridge module also includes a capacitor 8; the capacitor 8 is connected in parallel between the positive terminal 501 and the negative terminal 502. The capacitor serves to absorb switching voltage spikes and smooth DC voltage.

[0070] Preferably, the capacitor 8 has a capacitance of 150uF. In 100kW-level applications, it can replace the traditional DC-Link capacitor installed at one end of the power module.

[0071] For example, such as Figure 21 As shown, through simulation analysis, when the capacitance of capacitor 8 is 150uF, the single-channel half-bridge module has a withstand voltage of 900V and an ESR of 0.5mΩ; achieving an ESL of 2.78nH and a switching speed of di / dt of 20A / ns for the single-channel half-bridge module and film capacitor system, and reducing the switching peak to 55.6V (2.78nH*20A / ns=55.6V), can greatly reduce switching losses or improve the voltage application platform.

[0072] Compared to the traditional method of centrally arranging DC-link capacitors at one end of the power module, this layout eliminates the need for stacked busbars of DC-link capacitors, resulting in improvements of 10-30% in weight, cost, and size from a system integration perspective.

[0073] Example 3 This utility model embodiment provides a multi-channel parallel half-bridge module, which includes N single-channel half-bridge modules of embodiment 2, and the N single-channel half-bridge modules are connected in parallel in sequence, where N is an integer greater than 1; the stacked circuit boards 20 in each single-channel half-bridge module can be integrated into a single circuit board.

[0074] Specifically, the sixth pad 603 in the N single-channel half-bridge modules is connected in series; the positive terminal 501 in the N single-channel half-bridge modules is connected in series; the negative terminal 502 in the N single-channel half-bridge modules is connected in series; and the N single-channel half-bridge modules share a single AC terminal 503.

[0075] The only difference between this embodiment and Embodiment 2 is the number of half-bridge branches. In practical applications, the required number of parallel half-bridge modules can be obtained by simply connecting the single-path half-bridge modules from Embodiment 2 in parallel to the corresponding number of branches.

[0076] For example, such as Figures 17-20 As shown, the multi-parallel half-bridge module includes two single-path half-bridge modules as described in Embodiment 2.

[0077] Specifically, such as Figure 17 As shown, the multi-parallel half-bridge module includes a multilayer circuit board 20 and four single-tube power devices 10 as described in Embodiment 1.

[0078] like Figure 17 and Figure 18 As shown, the stacked circuit board 20 includes a circuit board pad assembly 6, an insulating layer 4, and an I / O terminal assembly 5 stacked in sequence; and the I / O terminal assembly 5 and the circuit board pad assembly 6 are electrically connected; and four single-tube power devices 10 are fixedly connected to the circuit board pad assembly 6 of the circuit board 20 through their respective single-tube pad assemblies 2.

[0079] Specifically, such as Figure 19 As shown, the circuit board pad assembly 6 includes two fourth pads 601, two fifth pads 602, one sixth pad 603, and four seventh pads 604. The fourth pads 601 and fifth pads 602 are both adjacent to the sixth pad 603; the two seventh pads 604 correspond one-to-one with the two fourth pads 601, with each seventh pad 604 positioned close to its corresponding fourth pad 601; the other two seventh pads 604 correspond one-to-one with the two fifth pads 602, with each seventh pad 604 positioned close to its corresponding fifth pad 602.

[0080] The two fourth pads 601 are connected one-to-one with the first pads 201 on the two single-transistor power devices 10 belonging to the upper half-bridge; the two fifth pads 602 are connected one-to-one with the second pads 202 on the other two second single-transistor power devices 10 belonging to the lower half-bridge; the sixth pad 603 is used to simultaneously match and connect with the second pads 202 of the two single-transistor power devices 10 of the upper half-bridge and the first pads 201 of the two single-transistor power devices 10 of the lower half-bridge; the two seventh pads 604 located near the fourth pads 601 are connected one-to-one with the third pads 203 on the two single-transistor power devices 10 belonging to the upper half-bridge; the two seventh pads 604 located near the fifth pads 602 are connected one-to-one with the third pads 203 on the two single-transistor power devices 10 belonging to the lower half-bridge.

[0081] Preferably, a through groove is provided on each fifth pad 602 near the sixth pad 603, and a corresponding seventh pad 604 is embedded in the through groove; a through groove is also provided on the sixth pad 603 near each fourth pad 601, and a corresponding seventh pad 604 is embedded in the through groove.

[0082] The compact arrangement of pads in the circuit board pad assembly and the single-tube pad assembly minimizes the overall size of the half-bridge module.

[0083] Furthermore, such as Figure 18 As shown, the IO terminal assembly 5 includes one positive terminal 501, one negative terminal 502, one AC terminal 503, and four gate terminals 504. The positive terminal 501 is electrically connected to all fourth pads 601 in a positive orientation; the negative terminal 502 is electrically connected to all fifth pads 602 in a positive orientation; the AC terminal 503 is electrically connected to a portion of the sixth pad 603 in a positive orientation; and the four gate terminals 504 are electrically connected to the four seventh pads 604 in a one-to-one correspondence.

[0084] Specifically, such as Figure 19 As shown, the positive terminal 501 and each of the fourth pads 601 are electrically connected through the second connecting conductor 7 penetrating the insulating layer plate 4; the negative terminal 502 and each of the fifth pads 602 are electrically connected through the second connecting conductor 7 penetrating the insulating layer plate 4; the AC terminal 503 and a portion of the sixth pad 603 are electrically connected through the second connecting conductor 7 penetrating the insulating layer plate 4; and the corresponding gate terminal 504 and the seventh pad 604 are electrically connected through the second connecting conductor 7 penetrating the insulating layer plate 4.

[0085] For example, the second connecting conductor 7 may employ a metal via structure.

[0086] By using a multilayer circuit board to connect an even number of single-transistor power devices in series and parallel, a multi-channel parallel half-bridge module with 2N chips and N branches in parallel is formed. Furthermore, the conductors in the I / O terminal assembly of this multi-channel parallel half-bridge module are all located on the same side of the insulating layer, making the half-bridge module structure simpler, more reliable, and easier for subsequent application and installation. Moreover, the ingenious design of the multilayer circuit board allows for the stacking of conductive layers, greatly reducing the stray inductance of the entire half-bridge module.

[0087] Furthermore, the positive terminal 501, negative terminal 502, AC terminal 503, and gate terminal 504 can all adopt a plate-like structure.

[0088] The positive terminal, negative terminal, AC terminal, and gate terminal, etc., are arranged on the same level, which makes it easier to install the half-bridge module in subsequent applications and effectively reduces the size of the half-bridge module.

[0089] Preferably, the gate terminal 504 may have a columnar structure, and the gate terminal 504 may penetrate the insulating layer plate 4 and be directly fixedly connected to the seventh pad 604.

[0090] Generally, the gate size on power chips is small. Setting the gate terminal as a columnar structure facilitates the overall structural layout of the half-bridge module and can optimize the manufacturing process and reduce production costs.

[0091] Preferred, such as Figure 19 As shown, the two fourth pads 601 are located on the same side of the sixth pad 603; the two fifth pads 602 are located on the other side of the sixth pad 603. Figure 20 As shown, the two single-tube power devices 10 in each single-channel half-bridge module are arranged side by side, and the single-tube pad assemblies 2 on the two single-tube power devices 10 in the same single-channel half-bridge module are arranged in a centrally symmetrical manner; the single-tube power devices 10 in the two single-channel half-bridge modules are arranged sequentially along the parallel path direction. The multi-channel parallel half-bridge module provided by this utility model has a simple structure, is easy to expand, and has a wide range of applications.

[0092] Furthermore, such as Figure 17 As shown, two capacitors 8 are connected in parallel between the positive terminal 501 and the negative terminal 501; the two capacitors 8 are connected in parallel with each other, and each capacitor 8 corresponds to a single-channel half-bridge module. The capacitors serve to absorb switching voltage spikes and smooth DC voltage. In applications requiring high capacitance and ripple current capability, multiple small-value capacitors can be connected in parallel, or a large-value capacitor can be used to connect the positive and negative terminals.

[0093] Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A single-transistor power device, characterized in that, The single-tube power device includes an insulating plastic package (1), a single-tube pad assembly (2) located on one side of the insulating plastic package (1), and a chip assembly (3) encapsulated inside the insulating plastic package (1) and electrically connected to the single-tube pad assembly (2). The chip assembly (3) includes a carrier (301) and a power chip (302); one side of the power chip (302) is soldered to one side of the carrier (301), and the signal terminals on that side of the power chip (302) are electrically connected to the carrier (301); the signal terminals on the other side of the power chip (302) and the carrier (301) are electrically connected to the single-tube pad assembly (2) through a first connecting conductor (303); the single-tube pad assembly (2), the power chip (302) and the first connecting conductor (303) are all located on the same side of the carrier (301); The side of the carrier (301) away from the single tube pad assembly (2) is exposed outside the insulating plastic encapsulation (1) for mounting the heat sink.

2. The single-transistor power device according to claim 1, characterized in that, The carrier (301) adopts a copper-clad insulating substrate, including an upper metal layer (3012), an insulating plate (3011) and a lower metal layer (3013) stacked in sequence; one side of the power chip (302) is bonded to the upper metal layer (3012), and the signal terminal on the side of the power chip (302) is electrically connected to the upper metal layer (3012).

3. A single-transistor power device according to claim 2, characterized in that, One side of the power chip (302) is welded to the upper metal layer (3012) of the carrier (301), and the drain signal terminal on the side of the power chip (302) is electrically connected to the upper metal layer (3012); the other side of the power chip (302) is provided with a source signal terminal and a gate signal terminal. The single-tube pad assembly (2) includes a first pad (201), a second pad (202), and a third pad (203) that are insulated from each other; the first pad (201) is electrically connected to the upper metal layer (3012) through a corresponding first connecting conductor (303); the second pad (202) is electrically connected to the source signal terminal of the power chip (302) through a corresponding first connecting conductor (303); and the third pad (203) is electrically connected to the gate signal terminal of the power chip (302) through a corresponding first connecting conductor (303).

4. A single-transistor power device according to claim 3, characterized in that, The first pad (201), the second pad (202), and the third pad (203) are arranged adjacent to each other; the second pad (202) is aligned with the source signal terminal on the power chip (302); the first pad (201) is aligned with the part of the upper metal layer (3012) not covered by the power chip (302); and the third pad (203) is aligned with the gate signal terminal on the power chip (302).

5. A single-transistor power device according to claim 4, characterized in that, The first connecting conductor (303) may adopt a metal via structure; The first pad (201), the second pad (202), and the third pad (203) are electrically connected to the first connecting conductor (303) of the upper metal layer (3012) and have the same or similar axial dimensions.

6. A single-channel half-bridge module, characterized in that, The single-path half-bridge module includes a multilayer circuit board (20) and two single-tube power devices as described in any one of claims 1-5; The stacked circuit board (20) includes a circuit board pad assembly (6), an insulating layer (4), and an IO terminal assembly (5) stacked in sequence; and the IO terminal assembly (5) and the circuit board pad assembly (6) are electrically connected; two single-tube power devices (10) are fixedly connected to the circuit board pad assembly (6) of the stacked circuit board (20) through their respective single-tube pad assemblies (2).

7. A single-channel half-bridge module according to claim 6, characterized in that, The circuit board pad assembly (6) includes a fourth pad (601), a fifth pad (602), a sixth pad (603), and two seventh pads (604). The fourth pad (601) and the fifth pad (602) are both arranged adjacent to the sixth pad (603); one seventh pad (604) is arranged close to the fourth pad (601), and the other seventh pad (604) is arranged close to the fifth pad (602); The fourth pad (601) is used to match and connect with the first pad (201) of a single power device (10) belonging to the upper half-bridge; the fifth pad (602) is used to match and connect with the second pad (202) of another single power device (10) belonging to the lower half-bridge; the sixth pad (603) is used to match and connect with both the second pad (202) of the single power device (10) belonging to the upper half-bridge and the first pad (201) of the single power device (10) belonging to the lower half-bridge; the seventh pad (604) located near the fourth pad (601) is used to match and connect with the third pad (203) of the single power device (10) belonging to the upper half-bridge, and the seventh pad (604) located near the fifth pad (602) is used to match and connect with the third pad (203) of the single power device (10) belonging to the lower half-bridge.

8. A single-channel half-bridge module according to claim 7, characterized in that, The IO terminal assembly (5) includes a positive terminal (501), a negative terminal (502), an AC terminal (503), and two gate terminals (504); the positive terminal (501) and the fourth pad (601) are aligned and electrically connected; the negative terminal (502) and the fifth pad (602) are aligned and electrically connected; the AC terminal (503) and a portion of the sixth pad (603) are aligned and electrically connected; the two gate terminals (504) are corresponding one-to-one with the two seventh pads (604) and electrically connected.

9. A single-channel half-bridge module according to claim 8, characterized in that, The single-path half-bridge module also includes a capacitor (8); the capacitor (8) is connected in parallel between the positive terminal (501) and the negative terminal (502).

10. A multi-path parallel half bridge module, characterized in that, The multi-path parallel half-bridge module includes N single-path half-bridge modules as described in any one of claims 6-9, and the N single-path half-bridge modules are connected in parallel sequentially, where N is an integer greater than 1; The stacked circuit boards (20) in each single-path half-bridge module are integrated into a single circuit board.

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