Anti-splashing special-shaped evaporation device for semiconductor

Abstract

This application relates to the field of semiconductor technology and discloses an anti-splatter irregular-shaped vapor deposition apparatus for semiconductors, comprising: a vapor deposition body, a crucible sleeve, and a heated cone. The upper surface of the vapor deposition body is provided with at least one vapor deposition receiving tank, and the crucible sleeve is disposed within the vapor deposition receiving tank. The crucible sleeve includes a bottom wall connector and a side wall connector. The side wall connector is connected to the bottom wall connector and gradually expands relative to the bottom wall connector along the direction from the bottom to the opening of the vapor deposition receiving tank to construct a top-opening support cavity for supporting metal material. The heated cone is integrally formed with the bottom wall connector within the support cavity of the crucible sleeve, and gradually tapers along the direction from the bottom to the opening of the vapor deposition receiving tank. The end of the heated cone away from the bottom wall connector has a heated working surface for receiving an electron beam spot to heat the metal material. This application improves the reliability of semiconductor vapor deposition.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more specifically to an anti-splatter irregular shape evaporation apparatus for semiconductors. Background Technology

[0002] In semiconductor manufacturing processes, especially when using PVD (Physical Vapor Deposition) to deposit metal onto wafers, electron beam evaporation is generally employed. Therefore, the evaporation equipment is one of the most important pieces of equipment in the evaporation process. In related technologies, electron beam evaporation involves placing the metal material directly into a crucible within the evaporation equipment, with the light spot directly hitting the metal material inside the crucible for evaporation. This causes the metal material to receive extremely high heat instantaneously, which can easily lead to splattering, resulting in wafer damage, seriously affecting product quality, and posing significant production risks. This situation needs to be changed. Utility Model Content

[0003] In view of this, this application provides an anti-splatter irregular shape evaporation apparatus for semiconductors to solve the aforementioned technical problems.

[0004] In a first aspect, embodiments of this application disclose an anti-splash irregular evaporation deposition apparatus for semiconductors, comprising: an evaporation deposition body, a crucible sleeve, and a heated cone, wherein the upper surface of the evaporation deposition body is provided with at least one evaporation deposition receiving groove, and the crucible sleeve is disposed in the evaporation deposition receiving groove; The crucible sleeve includes a bottom wall connector and a side wall connector. The side wall connector is connected to the bottom wall connector and gradually expands relative to the bottom wall connector along the direction from the bottom to the opening of the vapor deposition tank to construct a top-opening bearing cavity to support the metal material. The heated cone is integrally formed with the bottom wall connector in the bearing cavity of the crucible sleeve, and the heated cone gradually tapers from the bottom to the opening of the vapor deposition tank. The end of the heated cone away from the bottom wall connector has a heated working surface for receiving electron beam spot to heat the metal material.

[0005] In one possible example, the heated working surface and the end of the sidewall connector away from the bottom wall connector are located on the same plane.

[0006] In one possible example, on the upper surface of the vapor deposition body, the ratio of the diameter of the heated cone to the inner diameter of the crucible sleeve is 1 / 3.

[0007] In one possible example, the end of the sidewall connector away from the bottom wall connector is flush with the upper surface of the vapor deposition body.

[0008] In one possible example, a first tilt angle is provided between the bottom wall connector and the side wall connector, the angle of the first tilt angle ranging from 100° to 145°.

[0009] In one possible example, a second tilt angle is provided between the outer wall of the heated cone and the bottom wall connector, the second tilt angle being the same size as the first tilt angle.

[0010] In one possible example, the bottom wall connector and the side wall connector are integrally formed.

[0011] In one possible example, the connection between the heated cone and the bottom wall connector, the connection between the inner walls of the bottom wall connector and the side wall connector, and the connection between the outer walls of the bottom wall connector and the side wall connector are all provided with chamfers.

[0012] In one possible example, the side of the bottom wall connector facing the bottom of the vapor deposition tank is flat, and the bottom wall connector is attached to the bottom of the vapor deposition tank.

[0013] In one possible example, an annular isolation space is maintained between the sidewall connector and the inner wall of the vapor deposition accommodating tank.

[0014] In summary, compared with the prior art, this application discloses an anti-splatter irregular-shaped vapor deposition apparatus for semiconductors, including a vapor deposition body, a crucible sleeve, and a heated cone. The upper surface of the vapor deposition body is provided with at least one vapor deposition receiving tank. The crucible sleeve is disposed in the vapor deposition receiving tank. The crucible sleeve includes a bottom wall connector and a side wall connector. The side wall connector is connected to the bottom wall connector and gradually expands relative to the bottom wall connector along the direction from the bottom to the opening of the vapor deposition receiving tank to construct a bearing cavity with an open top to bear the metal material. The heated cone is integrally formed with the bottom wall connector in the bearing cavity of the crucible sleeve, and the heated cone gradually shrinks along the direction from the bottom to the opening of the vapor deposition receiving tank. The end of the heated cone away from the bottom wall connector has a heated working surface for receiving the electron beam spot to heat the metal material. That is, through the above settings, metal material vapor deposition spatter is eliminated, and the reliability of semiconductor vapor deposition is improved. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 This is a three-dimensional structural schematic diagram of the anti-splash irregular evaporation deposition apparatus for semiconductors used in this application; Figure 2 This is a three-dimensional structural schematic diagram of the crucible sleeve of this application; Figure 3 This is a cross-sectional structural diagram of the crucible sleeve of this application. Detailed Implementation

[0017] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the claims.

[0018] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. Furthermore, components, features, and elements with the same names in different embodiments of this application may have the same meaning or different meanings, the specific meaning of which must be determined by its interpretation in that specific embodiment or further in conjunction with the context of that specific embodiment.

[0019] It should be understood that the specific embodiments described herein are merely illustrative of this application and are not intended to limit this application.

[0020] In the following description, the use of suffixes such as "module," "part," or "unit" to denote elements is solely for the purpose of illustrative purposes and has no specific meaning in itself. Therefore, "module," "part," or "unit" may be used interchangeably.

[0021] In the description of this application, it should be noted that the terms "upper," "lower," "left," "right," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0022] The technical solutions shown in this application will be described in detail below through specific embodiments. It should be noted that the order of description of the following embodiments is not intended to limit the priority of the embodiments.

[0023] Please refer to Figures 1 to 3 The anti-splash irregular evaporation deposition apparatus for semiconductors of this application includes a deposition body 1, a crucible sleeve 2, and a heated cone 3.

[0024] In the specific implementation process, the upper surface of the vapor deposition body 1 is provided with at least one vapor deposition receiving tank 11, and the crucible sleeve 2 is disposed in the vapor deposition receiving tank 11. The crucible sleeve 2 includes a bottom wall connector 21 and a side wall connector 22. The side wall connector 22 is connected to the bottom wall connector 21 and gradually expands relative to the bottom wall connector 21 along the direction from the bottom to the opening of the vapor deposition receiving tank 11 to construct a bearing cavity with an open top to bear the metal material. Thus, based on this gradually expanding structure design, the thermal stress of the crucible sleeve 2 and the metal material during the vapor deposition process is dispersed. The bearing cavity constructed by the bottom wall connector 21 and the side wall connector 22 also has a heat preservation effect in the vapor deposition receiving tank 11, which can prevent the metal material from flowing out and splashing when it is cooled, thereby improving the reliability of the vapor deposition device.

[0025] The heated cone 3 is integrally formed with the bottom wall connector 21 in the bearing cavity of the crucible sleeve 2. The heated cone 3 gradually tapers from the bottom to the opening of the evaporation tank 11. The end of the heated cone 3 away from the bottom wall connector 21 has a heated working surface 3a, which is used to receive the electron beam spot, so that the electron beam can be concentrated on the heated working surface 3a, thereby heating the metal material. Thus, heat is transferred to the crucible sleeve 2 through the heated cone 3, avoiding the electron beam spot from directly acting on the metal material in the bearing cavity of the crucible sleeve 2, which would cause the metal material to be heated violently and generate splashes. This helps to maintain the uniformity of the evaporation film layer and ensure the quality of the wafer coating, thus solving the production risks in the semiconductor manufacturing process.

[0026] In one example, the heated working surface 3a and the end of the side wall connector 22 away from the bottom wall connector 21 are located on the same plane. This structural design can make the crucible sleeve 2 heat up evenly, which is beneficial to suppressing metal splashing.

[0027] It should be noted that on the upper surface of the vapor deposition body 1, the ratio of the diameter of the heated cone 3 to the inner diameter of the crucible sleeve 2 is 1 / 3. Figure 3 As indicated by the markings, L1 / L2 = 1 / 3, thus balancing the space ratio between the bearing cavity of the crucible sleeve 2 and the heated cone 3, so that the crucible sleeve 2 can quickly receive the heat conduction of the heated cone 3 while having a suitable loading capacity, thereby facilitating the vapor deposition of metal materials.

[0028] It is understood that the bottom wall connector 21 and the side wall connector 22 are integrally formed. The end of the side wall connector 22 away from the bottom wall connector 21 is flush with the upper surface of the vapor deposition body 1. The flush side wall and the upper surface of the vapor deposition body 1 form a relative plane, which prevents the metal material from overflowing from the side wall of the crucible sleeve 2 to the surface of the vapor deposition body 1 and reduces splashing caused by edge overheating. At the same time, the height of the flush side wall also matches the wafer surface, which can guide the metal material to evaporate uniformly along the axial direction, reduce uneven film thickness caused by lateral diffusion, and ensure that the crucible sleeve 2 does not protrude or dent from the surface of the body when it is installed in the vapor deposition body 1.

[0029] Preferably, the bottom wall connector 21 includes at least a tungsten bottom wall and the side wall connector 22 includes at least a tungsten side wall, so the crucible sleeve 2 can be made entirely of tungsten. Given the high melting point of tungsten, it is suitable for a wide range of metal vapor deposition in vapor deposition equipment, especially for nickel. On the other hand, the thermal expansion coefficient of the crucible sleeve 2 made of tungsten is stable, which can avoid the risk of cracking during cooling, such as when using molybdenum, and improve the reliability of vapor deposition.

[0030] In one example, a first tilt angle (e.g., between the bottom wall connector 21 and the side wall connector 22) is provided. Figure 3 The Q1 marking, and the second tilt angle (such as) between the outer wall of the heated cone 3 and the bottom wall connector 21. Figure 3 If the Q2 is marked, then the second tilt angle is the same as the first tilt angle. This symmetrical geometric angle design can ensure that the surface tension distribution of the metal material is uniform under heat, prevent local overheating leading to material splashing, and facilitate the evaporation of the metal material from the crucible sleeve 2 without affecting the uniformity of the wafer.

[0031] Optionally, the first tilt angle ranges from 100° to 145°.

[0032] Preferably, the angle between the first tilt angle and the second tilt angle is 125°.

[0033] In the specific implementation process, the side of the bottom wall connector 21 facing the bottom of the vapor deposition container 11 is flat, and the bottom wall connector 21 is attached to the bottom of the vapor deposition container 11, so that the crucible sleeve 2 can be stably placed in the vapor deposition container 11 of the vapor deposition body 1, and is not easily displaced due to vibration.

[0034] Among them, the side wall connector 22 of the crucible sleeve 2 and the inner wall of the vapor deposition accommodating tank 11 maintain an annular isolation space to reduce the abrupt change of the interface heat conduction path. Moreover, the isolation space can effectively reduce the stress interference generated between the crucible sleeve 2 and the vapor deposition body 1 when the crucible sleeve 2 is heated and expanded, avoid jamming or cracking caused by uneven thermal expansion, and thus improve the reliability of the overall device.

[0035] In one embodiment, the vapor deposition body 1 includes a crucible.

[0036] In the specific implementation process, the connection between the heated cone 3 and the bottom wall connector 21, the connection between the inner walls of the bottom wall connector 21 and the side wall connector 22, and the connection between the outer walls of the bottom wall connector 21 and the side wall connector 22 are all provided with chamfered structures with rounded transitions. Combining the aforementioned tapered and expanded structure designs, the crucible sleeve 2, paired with the heated cone 3, allows the thermal expansion of the metal material during evaporation to be dispersed along the outer wall of the heated cone 3 and the inner wall of the crucible sleeve 2, avoiding stress concentration at the bottom corner. This means the metal material naturally spreads along the side wall connector 22, reducing splashing caused by local overheating and improving the reliability of vapor deposition. In other words, the chamfered structure with rounded transition effectively reduces local thermal stress concentration, prevents crack formation, and improves the heat resistance stability and service life of the device.

[0037] The present application has been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only for the purpose of helping to understand the core ideas of the present application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of the present application. Therefore, the content of this specification should not be construed as a limitation of the present application.

Claims

1. An anti-splatter irregular-shaped vapor deposition apparatus for semiconductors, characterized in that, include: The vapor deposition body, crucible sleeve, and heated cone are provided. The upper surface of the vapor deposition body is provided with at least one vapor deposition receiving groove, and the crucible sleeve is disposed in the vapor deposition receiving groove. The crucible sleeve includes a bottom wall connector and a side wall connector. The side wall connector is connected to the bottom wall connector and gradually expands relative to the bottom wall connector along the direction from the bottom to the opening of the vapor deposition tank to construct a top-opening bearing cavity to support the metal material. The heated cone is integrally formed with the bottom wall connector in the bearing cavity of the crucible sleeve, and the heated cone gradually tapers from the bottom to the opening of the vapor deposition tank. The end of the heated cone away from the bottom wall connector has a heated working surface for receiving electron beam spot to heat the metal material.

2. The anti-splatter irregular-shaped vapor deposition apparatus for semiconductors as described in claim 1, characterized in that, The heated working surface and the end of the side wall connector away from the bottom wall connector are located on the same plane.

3. The anti-splatter irregular shape evaporation apparatus for semiconductors as described in claim 1, characterized in that, On the upper surface of the vapor deposition body, the ratio of the diameter of the heated cone to the inner diameter of the crucible sleeve is 1 / 3.

4. The anti-splatter irregular shape evaporation apparatus for semiconductors as described in claim 1, characterized in that, The end of the sidewall connector away from the bottom wall connector is flush with the upper surface of the vapor deposition body.

5. The anti-splatter irregular shape evaporation apparatus for semiconductors as described in claim 1, characterized in that, A first tilt angle is provided between the bottom wall connector and the side wall connector, and the angle range of the first tilt angle includes 100° to 145°.

6. The anti-splatter irregular shape evaporation apparatus for semiconductors as described in claim 5, characterized in that, A second inclination angle is provided between the outer wall of the heated cone and the bottom wall connector, and the second inclination angle is the same as the first inclination angle.

7. The anti-splatter irregular shape evaporation apparatus for semiconductors as described in claim 1, characterized in that, The bottom wall connector and the side wall connector are integrally formed.

8. The anti-splatter irregular shape evaporation apparatus for semiconductors as described in claim 1, characterized in that, The connection between the heated cone and the bottom wall connector, the connection between the inner walls of the bottom wall connector and the side wall connector, and the connection between the outer walls of the bottom wall connector and the side wall connector are all provided with chamfers.

9. The anti-splatter irregular shape evaporation apparatus for semiconductors as described in claim 1, characterized in that, The side of the bottom wall connector facing the bottom of the vapor deposition tank is flat, and the bottom wall connector is attached to the bottom of the vapor deposition tank.

10. The anti-splatter irregular shape evaporation apparatus for semiconductors as described in claim 1, characterized in that, An annular isolation space is maintained between the sidewall connector and the inner wall of the vapor deposition accommodating tank.

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