High-cavity PVD ignition discharge structure

Abstract

The utility model discloses a high cavity PVD ignition discharge structure relates to magnetron sputtering technical field, this structure includes high cavity magnetron sputtering equipment main part, its inside is equipped with vacuum cavity, magnetron sputtering subassembly, wafer table, vacuum and power system, vacuum cavity circumference assembly side prevents the board, and the inner wall of side prevents the board and is connected the pressing plate through spring rod, and wafer table bottom surface center is connected with the jacking mechanism output end, and jacking mechanism is controlled by vacuum and power system, when working, start -up stage jacking mechanism drive wafer table drive base plate and go up, make target material and base plate interval shrink to 100 200mm to establish glow discharge fast and complete ignition, after ignition is stable, jacking mechanism drive base plate and go down to 200 400mm work distance, and base plate is fixed through wafer table positioning groove and pressing plate, the utility model discloses through adjusting target base distance realizes quick ignition, spares traditional air pressure adjustment time -consuming link, and when ignition, the length is shortened from 10 20 seconds to about 8 seconds, and the production efficiency of equipment is improved significantly.

Description

Technical Field

[0001] This utility model relates to the field of magnetron sputtering technology, specifically a high-cavity PVD ignition discharge structure. Background Technology

[0002] Magnetron sputtering technology, with its advantages of low substrate temperature, high film purity, dense and uniform structure, strong adhesion, and good process repeatability, has become a core process for depositing metal thin films in the manufacturing of semiconductor integrated circuits, flat panel displays, and photovoltaic devices. As devices move towards three-dimensional integration, high aspect ratio interconnect structures such as through-silicon vias (TSVs) and ceramic deep holes place extremely high demands on the uniformity of the conductive seed layer film on their inner walls. Traditional PVD struggles to achieve uniform step coverage in high aspect ratio structures, exhibiting typical defects such as top overhangs, insufficient bottom coverage, and significant thickness gradients on the sidewalls. To overcome this limitation, equipment manufacturers generally adopt high-cavity... The design significantly increases the distance between the target cathode and the substrate to 300-400 mm. This high-cavity design aims to enhance the particle's freedom of motion by significantly increasing the target-substrate distance, allowing it to gain sufficient kinetic energy in a vacuum environment and have ample time to adjust its trajectory under the Lorentz force of the magnetic field, thus effectively entering the high aspect ratio channel. However, the significant increase in the target-substrate distance makes it difficult to establish and maintain a stable glow discharge under conventional process gas pressure conditions. To address this challenge, the current industry standard solution is to adopt a high-pressure ignition-low-pressure sputtering strategy: during the equipment startup phase, the argon (Ar) gas pressure is temporarily increased to several times the working gas pressure. By increasing the gas density, the mean free path of electrons is shortened, thereby increasing the probability of electron collision ionization and assisting in ignition. After the glow discharge is stably established, the Ar gas pressure is then rapidly reduced to a preset, lower actual process gas pressure for continuous sputtering deposition.

[0003] Although the above scheme can achieve plasma start-up under high cavity conditions, its inherent drawback is that the entire process, including pressure increase, ignition triggering, plasma stabilization and pressure reduction, takes as long as 10-20 seconds. For high-capacity production lines with a production cycle of only tens of seconds, the proportion of time occupied by the ignition process is too high, which has become a key bottleneck restricting the overall production efficiency and capacity of the equipment.

[0004] Therefore, there is an urgent need to develop a new ignition discharge technology or device suitable for configurations with high cavity height and large distance between the target cathode and the substrate, in order to achieve instantaneous ignition or significantly shorten the ignition time, fundamentally eliminate the process delay, and thus greatly improve the production efficiency of magnetron sputtering equipment in advanced three-dimensional structure coating applications. Utility Model Content

[0005] This invention provides a high-cavity PVD ignition discharge structure, which solves the problems mentioned in the background art.

[0006] To achieve the above objectives, this utility model provides the following technical solution:

[0007] A high-cavity PVD ignition discharge structure includes:

[0008] The main body of the high-cavity magnetron sputtering equipment includes a vacuum chamber, magnetron sputtering components, a substrate stage, and a vacuum and power system. It enhances gas ionization by confining electrons with a magnetic field, so that plasma ions bombard the target material to sputter atoms and deposit them on the substrate surface to form a thin film.

[0009] The center of the substrate stage bottom is connected to the output end of the lifting mechanism by bolts. The lifting mechanism is mounted below the vacuum chamber of the high cavity magnetron sputtering equipment and is controlled by the vacuum and power system inside the high cavity magnetron sputtering equipment.

[0010] As a preferred technical solution of this utility model, the upper end of the vacuum cavity of the main body of the high cavity magnetron sputtering device is open, and a sealing end cap is fitted with a hinge at the open port to seal the vacuum cavity.

[0011] As a preferred embodiment of this invention, the surface of the main body of the high-cavity magnetron sputtering device is integrally provided with a window for observing the ignition discharge process.

[0012] As a preferred technical solution of this utility model, the magnetron sputtering assembly is bolted to the surface of the sealed end cap and includes structures such as a magnetron tube, a target backplate, and a target, and is controlled by the vacuum and power system inside the main body of the high-cavity magnetron sputtering equipment.

[0013] As a preferred embodiment of this utility model, the periphery of the vacuum cavity of the high-cavity magnetron sputtering equipment is equipped with a side anti-sputtering plate that provides large-area isolation for the inner cavity.

[0014] As a preferred technical solution of this utility model, two sets of straight sliding grooves are symmetrically arranged along the axis on the inner wall of the side anti-collision plate, and two sliding grooves are provided in each set. A spring rod with elastic extension and retraction capability is fixedly installed inside each sliding groove.

[0015] As a preferred embodiment of this utility model, the output ends of the spring rods are all fixed to the pressure plates that are linearly slidably constrained inside the slide grooves, and the slide groove group on the same side of the pressure plates has a support that matches the shape of the slide grooves.

[0016] As a preferred embodiment of this utility model, the radial side of the main body of the pressure plate is pressed against the edge of the substrate.

[0017] As a preferred technical solution of this utility model, the substrate is shaped to fit into the positioning groove formed in the recess of the substrate stage bearing surface, and the pressure plate, under the action of the spring rod, presses and positions the substrate.

[0018] As a preferred embodiment of this invention, the substrate stage and the grooves on its surface are configured according to the size and shape of the substrate.

[0019] The present invention has the following advantages:

[0020] By using the lifting mechanism below the substrate stage, the distance between the target and the substrate is adjusted to a close range of 100-200mm during the ignition stage. Under this condition, there is no need to increase the air pressure; ignition can be completed quickly directly under the process air pressure. After ignition stabilizes, the substrate stage is lowered to a working distance of 200-400mm using the lifting mechanism. This eliminates the time-consuming process of air pressure adjustment and avoids the problem of high-pressure ignition required in conventional high-cavity PVD. In practical applications, the ignition time is reduced from 10-20 seconds to about 8 seconds, saving nearly half the time and significantly improving the overall production efficiency of the equipment. Attached Figure Description

[0021] Figure 1 A three-dimensional structural schematic diagram of a high-cavity PVD ignition discharge structure;

[0022] Figure 2 A diagram illustrating the internal structure of a high-cavity PVD ignition discharge structure;

[0023] Figure 3 A cross-section of the high-cavity PVD ignition discharge structure at the lifting mechanism. Figure 1 ;

[0024] Figure 4 A cross-section of the high-cavity PVD ignition discharge structure at the spring rod. Figure 1 ;

[0025] Figure 5 A cross-section of the high-cavity PVD ignition discharge structure at the lifting mechanism. Figure 2 ;

[0026] Figure 6 For high-cavity PVD ignition discharge structure in Figure 5 Enlarged view of point A in the middle.

[0027] In the figure: 1. Main body of high-cavity magnetron sputtering equipment; 2. Sealed end cap; 3. Side anti-attachment plate; 4. Lifting mechanism; 5. Substrate stage; 6. Substrate; 7. Pressure plate; 8. Spring rod; 9. Magnetron sputtering assembly. Detailed Implementation

[0028] The preferred embodiments of the present invention will be described below with reference to the accompanying drawings. It should be understood that the preferred embodiments described herein are for illustration and explanation only and are not intended to limit the present invention.

[0029] It should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", and "outer" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0030] Please see Figures 1-6 A high-cavity PVD ignition discharge structure, comprising:

[0031] The main body 1 of the high-cavity magnetron sputtering equipment generally includes a vacuum chamber, a magnetron sputtering component 9, a substrate stage 5, and a vacuum and power system. It enhances gas ionization by confining electrons with a magnetic field, so that plasma ions bombard the target material to sputter atoms and deposit them on the surface of the substrate 6 to form a thin film.

[0032] The vacuum chamber has an open upper end, with a hinged sealing end cap 2 at the open port to seal the vacuum chamber. The surface of the high-cavity magnetron sputtering device body 1 is integrally provided with a window for observing the ignition discharge process. The magnetron sputtering assembly 9, including the magnetron tube, target backplate, and target structure, is bolted to the surface of the sealing end cap 2 and is controlled by the vacuum and power system inside the high-cavity magnetron sputtering device body 1. Side anti-attachment plates 3 are fitted around the periphery of the vacuum chamber of the high-cavity magnetron sputtering device body 1 to provide large-area isolation for the inner cavity. Along the axial direction on the inner wall of the side anti-attachment plates 3… It is said that two sets of linear slides are provided, and two slides are provided in each set. Each slide has a spring rod 8 with elastic extension and contraction capability fixed inside. The output end of the spring rod 8 is fixed to the pressure plate 7 which is linearly slidably constrained inside the slide. The pressure plate 7 has a support body that matches the shape of the slide on the same side of the slide group. The centripetal side of the main body of the pressure plate 7 presses against the side of the substrate 6. The substrate 6 is shaped to fit into the positioning groove formed in the bearing surface of the substrate stage 5. Under the action of the spring rod 8, the pressure plate 7 presses and positions the substrate 6. The substrate stage 5 and the groove on its surface are set according to the size and shape of the substrate 6.

[0033] The center of the bottom surface of the substrate stage 5 is connected to the output end of the lifting mechanism 4 by bolts. The lifting mechanism 4 is mounted on the lower part of the vacuum chamber of the high cavity magnetron sputtering equipment body 1 and is controlled by the vacuum and power system inside the high cavity magnetron sputtering equipment body 1, so that the distance between the target material and the substrate 6 can be adjusted within the range of 100mm-400mm.

[0034] During operation, in the equipment startup phase, the lifting mechanism 4 drives the substrate stage 5 to move the substrate 6 upwards, adjusting the distance between the target (magnetron sputtering assembly 9) and the substrate 6 to 100-200mm. After Ar gas is introduced into the equipment vacuum chamber to a process pressure of 0.3Pa, the target power supply is turned on, and the magnetron of the magnetron sputtering assembly 9 scans the target area. Due to the close distance and sufficient electron collision ionization probability under low pressure, a stable glow discharge can be quickly established to complete the ignition. After the ignition stabilizes, the lifting mechanism 4 drives the substrate 6 to move smoothly downwards to a working depth of 200-400mm. With the distance reduced and no particles generated during the downward movement, the substrate 6 is securely fixed by the positioning groove and the pressure plate 7, and the sputtering stage begins. The magnetron of the magnetron sputtering assembly 9 continuously scans, the magnetic field enhances gas ionization, and plasma ions bombard the target material. The sputtered metal atoms / ions adjust their trajectory under the action of the Lorentz force of the magnetic field, thereby depositing a uniform and continuous thin film on the sidewall of the high aspect ratio channel. The gas pressure is stable throughout the process, eliminating time-consuming steps such as traditional gas pressure adjustment. The ignition time is reduced from 10-20 seconds to about 8 seconds, significantly improving production efficiency.

[0035] In summary, by using the lifting mechanism 4 below the substrate stage 5, the distance between the target material and the substrate 6 is adjusted to a close range of 100-200mm during the ignition stage. Under this condition, there is no need to increase the air pressure; ignition can be completed quickly directly under the process air pressure. After ignition stabilizes, the lifting mechanism 4 lowers the substrate stage 5 to a working distance of 200-400mm, eliminating the time-consuming process of air pressure adjustment and avoiding the problem of high-pressure ignition required in conventional high-cavity PVD. In practical applications, the ignition time is reduced from 10-20 seconds to about 8 seconds, saving nearly half the time and significantly improving the overall production efficiency of the equipment.

[0036] In the implementation of this invention, during the equipment startup phase, the lifting mechanism 4, controlled by the vacuum and power system inside the main body 1 of the high-cavity magnetron sputtering equipment, drives the substrate stage 5 to move the substrate 6 upwards, adjusting the distance between the target and the substrate 6 to a close range of 100mm-200mm. At this time, process gas (Ar) is introduced into the vacuum chamber of the main body 1 of the high-cavity magnetron sputtering equipment to the process pressure (e.g., 0.3Pa). Then, the target power supply is turned on, and the magnetron in the magnetron sputtering assembly 9 begins to scan in the area directly facing the target. Due to the close distance between the target and the substrate 6, electrons can still obtain sufficient collision ionization probability (meaning the probability of electrons colliding with process gas (e.g., Ar) atoms and ionizing the gas atoms to the point that a stable glow discharge can be established) even in a low-pressure environment (e.g., 0.3Pa), quickly establishing a stable glow discharge and completing the ignition process. After the glow discharge is stably established, the lifting mechanism 4 is restarted, driving the substrate stage 5 to move the substrate 6 upwards. The moving substrate stage 5 drives the substrate 6 to move smoothly downwards until the distance between the target and the substrate 6 is adjusted to a high cavity working distance of 200mm-400mm. This downward movement will not cause the formation of a patent. At the same time, the substrate 6 is firmly fixed by the positioning groove on the surface of the substrate stage 5 and the pressure plate 7 under the elastic force of the spring rod 8. After entering the sputtering coating stage, the magnetron continuously scans, the magnetic field confines electrons to enhance gas ionization, and the plasma ions bombard the target under the action of the Lorentz force. The metal atoms / ions generated by sputtering adjust their movement trajectory under the action of the magnetic field Lorentz force, thereby depositing a uniform and continuous thin film on the high aspect ratio channel sidewall of the substrate 6. Throughout the process, the process gas pressure remains stable, eliminating the time-consuming steps of gas pressure increase, ignition trigger, plasma stabilization and gas pressure decrease in the traditional process. The total ignition time is shortened from 10-20 seconds to about 8 seconds, which significantly improves the production efficiency of the equipment.

[0037] It should be noted that the core principle behind the lifting mechanism 4's lifting and lowering operation is based on the following steps: power drive → linear conversion → stable guidance → precise adjustment. See below for reference:

[0038] First, a motor or piezoelectric device provides power. Then, through a structure such as a lead screw and worm gear, the rotational motion of the motor (or the tiny extension and contraction of the piezoelectric device) is converted into linear thrust, which directly lifts the substrate stage. At the same time, components such as guide rails and guide columns "constrain" the substrate stage, ensuring that it can only move in a vertical direction and will not tilt or wobble. Finally, sensors measure the height of the substrate stage in real time, and the control system adjusts the power output according to the target height to eliminate deviations.

[0039] Finally, it should be noted that the above description is merely a preferred embodiment of this utility model and is not intended to limit the utility model. Although the utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this utility model should be included within the protection scope of this utility model.

Claims

1. A high-cavity PVD ignition discharge structure, comprising: The main body (1) of the high cavity magnetron sputtering equipment includes a vacuum cavity, a magnetron sputtering assembly (9), a substrate stage (5), and a vacuum and power system. It enhances gas ionization by confining electrons with a magnetic field, so that plasma ions bombard the target material to sputter atoms and deposit them on the surface of the substrate (6) to form a thin film. Its features are: The center of the bottom surface of the substrate stage (5) is connected to the output end of the lifting mechanism (4) by bolts. The lifting mechanism (4) is mounted below the vacuum chamber of the high cavity magnetron sputtering equipment body (1) and is controlled by the vacuum and power system inside the high cavity magnetron sputtering equipment body (1).

2. The high-cavity PVD ignition discharge structure according to claim 1, characterized in that, The upper end of the vacuum cavity of the main body (1) of the high cavity magnetron sputtering equipment is open, and a sealing end cap (2) is fitted at the open port with a hinge, thereby sealing the vacuum cavity using the sealing end cap (2).

3. The high-cavity PVD ignition discharge structure according to claim 2, characterized in that, The surface of the main body (1) of the high-cavity magnetron sputtering device is integrally provided with a window for observing the ignition discharge process.

4. The high-cavity PVD ignition discharge structure according to claim 1, characterized in that, The magnetron sputtering assembly (9) is bolted to the surface of the sealed end cap (2), including the magnetron tube, the target back plate and the target, and is controlled by the vacuum and power system inside the high cavity magnetron sputtering equipment body (1).

5. The high-cavity PVD ignition discharge structure according to claim 1, characterized in that, The high-cavity magnetron sputtering equipment body (1) has a side anti-sputtering plate (3) installed around the vacuum cavity to isolate the inner cavity over a large area.

6. The high-cavity PVD ignition discharge structure according to claim 5, characterized in that, The inner wall of the side guard plate (3) is symmetrically provided with two sets of straight sliding grooves along the axis, and two sliding grooves are provided in each set. Each sliding groove is fixedly provided with a spring rod (8) with elastic extension and retraction capability.

7. The high-cavity PVD ignition discharge structure according to claim 6, characterized in that, The output ends of the spring rod (8) are all fixed to the pressure plate (7) inside the slide groove, which is constrained by linear sliding. The pressure plate (7) has a support body that matches the shape of the slide groove on the same side.

8. The high-cavity PVD ignition discharge structure according to claim 7, characterized in that, The centripetal side of the main body of the pressure plate (7) is pressed against the side of the substrate (6).

9. The high-cavity PVD ignition discharge structure according to claim 8, characterized in that, The substrate (6) is shaped to fit into the positioning groove formed in the bearing surface of the substrate stage (5), and the pressure plate (7) presses and positions the substrate (6) under the action of the spring rod (8).

10. The high-cavity PVD ignition discharge structure according to claim 9, characterized in that, The substrate stage (5) and the grooves on its surface are set according to the size and shape of the substrate (6).

Images