A crystal growth ingot furnace shield structure for silicon components

CN224605140UActive Publication Date: 2026-08-07NINGBO SINING SEMICONDUCTOR MATERIALS CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
NINGBO SINING SEMICONDUCTOR MATERIALS CO LTD
Filing Date
2025-08-27
Publication Date
2026-08-07

AI Technical Summary

Technical Problem

若改用圆形护板结构,虽更贴合硅部件的最终形状要求,但硅铸锭后膨胀易导致整体式圆形护板开裂,且脱模困难

Benefits of technology

[0016]与现有技术相比,本实用新型的有益效果是:通过采用上层圆形块和下层圆形块分瓣式,既符合硅部件圆形的形状要求,又通过分离式卡接板的多瓣设计和热膨胀间隙解决了整体式圆形护板易开裂的问题;其次,创新的L型自锁结构配合坩埚自重固定方式完全摒弃了螺栓连接,不仅避免了螺栓高温失效风险,还实现了免拆卸脱模;再者,下层圆形块内侧设置的脱模斜度与分瓣式结构协同作用,使硅锭在冷却收缩时能自动脱离护板,解决了传统结构需破坏性脱模的难题,实现了圆形护板与高效脱模的完美统一,同时通过阶梯式密封和拼接密封结构确保了工艺可靠性。

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Abstract

The utility model provides a crystal growth ingot furnace apron structure for silicon component belongs to the technical field of crystal growth equipment, including upper layer round block, separate type clamping plate, lower layer round block. The utility model discloses through adopting the upper layer round block and lower layer round block split -section type, both meet the shape requirement of silicon component round, and through the multi -petal design and thermal expansion gap of separate type clamping plate solve the problem that the integral type round apron is easy to crack, secondly, the innovative L type self -locking structure cooperation crucible deadweight fixed mode completely gives up bolt connection, not only avoids bolt high temperature failure risk, also realizes exempts from dismounting stripping, thirdly, the stripping slope of lower layer round block inside setting and split -section type structure synergistic effect, make silicon ingot can automatically separate from apron when cooling and contracting, solved the difficult problem that traditional structure needs destructive stripping, realized the perfect unity of round apron and high -efficient stripping.
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Description

Technical Field

[0001] This utility model belongs to the technical field of crystal growth equipment, specifically relating to a protective plate structure for a crystal growth ingot casting furnace used for silicon components. Background Technology

[0002] Semiconductor-grade silicon crystals are a key basic material for integrated circuit manufacturing. In the manufacturing process of silicon components, the structure of the ingot furnace liner directly affects the quality of silicon ingots and production costs. Especially in the manufacturing of large-size (22 inches and above) silicon components, the traditional square liner structure suffers from problems such as low processing efficiency and high material loss.

[0003] Currently, conventional ingot casting furnaces mostly use a square protective plate structure, consisting of four graphite protective plates fixed by bolts. During demolding, the bolts need to be removed and the crucible broken to remove the silicon ingot. If a circular protective plate structure is used instead, although it better fits the final shape requirements of silicon components, the expansion of the silicon ingot after casting can easily cause the integral circular protective plate to crack, and demolding is difficult. Utility Model Content

[0004] The purpose of this invention is to provide a structure for a crystal growth ingot furnace guard plate for silicon components, aiming to solve the problems mentioned in the background art.

[0005] To achieve the above objectives, this utility model provides the following technical solution:

[0006] A crystal growth ingot furnace guard plate structure for silicon components includes an upper circular block, a detachable snap-fit ​​plate, a lower circular block, and a crucible. The upper circular block is an integral circular structure made of carbon composite material, and the lower circular block is composed of multiple detachable snap-fit ​​plates spliced ​​together, with an L-shaped structure on the side.

[0007] In a preferred embodiment of this invention, the weight of the crucible and the silicon material inside is pressed against the L-shaped bottom end of the lower circular block, and the height of the lower circular block is greater than the height of the silicon ingot.

[0008] As a preferred embodiment of this utility model, the split snap-fit ​​plate has a two-lobed, three-lobed, or four-lobed structure, with thermal expansion gaps left between each lobe.

[0009] In a preferred embodiment of this utility model, the upper circular block and the lower circular block are fitted in a stepped manner, with the upper circular block covering the seam of the lower circular block.

[0010] In a preferred embodiment of this invention, the overall height of the upper circular block, the detachable snap-fit ​​plate, and the lower circular block after assembly is lower than the height of the crucible.

[0011] As a preferred embodiment of this utility model, the detachable snap-fit ​​plates adopt a concave-convex splicing structure.

[0012] As a preferred embodiment of this utility model, the inner wall of the lower circular block is provided with a demolding slope to achieve rapid demolding of the silicon ingot.

[0013] As a preferred embodiment of this utility model, the joint of the split snap-fit ​​plate adopts a splicing and sealing structure to reduce molten leakage.

[0014] As a preferred embodiment of this utility model, the material of the detachable snap-fit ​​plate is graphite or carbon composite material.

[0015] As a preferred embodiment of this utility model, the contact surface between the upper circular block and the crucible is provided with a boron nitride coating or graphite paper to reduce frictional resistance.

[0016] Compared with existing technologies, the beneficial effects of this utility model are as follows: By adopting a segmented design with upper and lower circular blocks, it not only meets the circular shape requirements of silicon components, but also solves the problem of easy cracking of integral circular protective plates through the multi-segment design of the split snap-fit ​​plate and the thermal expansion gap; secondly, the innovative L-shaped self-locking structure combined with the crucible's self-weight fixing method completely eliminates bolt connections, not only avoiding the risk of bolt failure at high temperatures, but also achieving demolding without disassembly; furthermore, the demolding slope set on the inner side of the lower circular block works in conjunction with the segmented structure, allowing the silicon ingot to automatically detach from the protective plate when cooling and shrinking, solving the problem of traditional structures requiring destructive demolding, and achieving a perfect unity of circular protective plates and efficient demolding. At the same time, the stepped sealing and splicing sealing structure ensures process reliability. Attached Figure Description

[0017] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. Among them:

[0018] Figure 1 This is a schematic diagram of the overall structure of this utility model;

[0019] Figure 2 This is a cross-sectional view of the overall structure of this utility model;

[0020] Figure 3 This is a schematic diagram of the two-part structure of the split snap-fit ​​plate of this utility model;

[0021] Figure 4 This is a schematic diagram of the three-lobed structure of the split snap-fit ​​plate of this utility model;

[0022] Figure 5 This is a schematic diagram of the four-lobed structure of the detachable snap-fit ​​plate of this utility model.

[0023] In the diagram: 1. Upper circular block; 2. Separable snap-fit ​​plate; 3. Lower circular block; 4. Crucible. Detailed Implementation

[0024] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, the specific embodiments of this utility model will be described in detail below with reference to the accompanying drawings.

[0025] Many specific details are set forth in the following description in order to provide a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Those skilled in the art can make similar extensions without departing from the spirit of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0026] Secondly, the term "an embodiment" or "embodiment" as used herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present invention. The phrase "in one embodiment" appearing in different places in this specification does not necessarily refer to the same embodiment, nor is it a single or selective embodiment that excludes other embodiments.

[0027] Example 1

[0028] Reference Figures 1-5 This is the first embodiment of the present invention. This embodiment provides a crystal growth ingot furnace guard plate structure for silicon components, including an upper circular block 1, a detachable snap-fit ​​plate 2, a lower circular block 3 and a crucible 4. The upper circular block 1 is an integral circular structure made of carbon composite material. The lower circular block 3 is composed of multiple detachable snap-fit ​​plates 2 spliced ​​together, and has an L-shaped structure on the side.

[0029] The double-layer design of the upper circular block 1 and the lower circular block 3, combined with the L-shaped structure of the split snap-fit ​​plate 2, effectively protects the crucible 4. The selection of carbon composite material ensures stability and durability under high temperature conditions.

[0030] Specifically, the weight of the crucible 4 and the silicon material inside presses down on the L-shaped bottom of the lower circular block 3, and the height of the lower circular block 3 is greater than the height of the silicon ingot.

[0031] The L-shaped bottom of the lower circular block 3 is pressed by the weight of the crucible 4 and the silicon material, which has a reliable fixing effect. This completely eliminates the traditional bolt fixing method and solves the problems of bolts being easy to loosen in high temperature environments and easy to break during thermal expansion and contraction.

[0032] Furthermore, the split snap-fit ​​plate 2 has a two-, three-, or four-lobed structure, with thermal expansion gaps between each lobe.

[0033] Among them, the split snap-fit ​​plate 2 adopts a split design with two, three or four lobes. The thermal expansion gap reserved between the lobes allows the upper circular block 1, the split snap-fit ​​plate 2 and the lower circular block 3 to deform synchronously with the thermal expansion and contraction of the crucible 4, which effectively avoids the stress cracks generated by the traditional integral structure when the temperature changes.

[0034] Preferably, the upper circular block 1 and the lower circular block 3 are fitted in a stepped manner, with the upper circular block 1 covering the joint of the lower circular block 3. The overall height of the upper circular block 1, the separable snap-fit ​​plate 2, and the lower circular block 3 after splicing is lower than the height of the crucible 4.

[0035] The stepped design of the upper circular block 1 and the lower circular block 3 forms an effective sealing structure. The design of the upper circular block 1 covering the joint of the lower layer not only enhances the structural strength but also prevents the melt from leaking. The overall height of the upper circular block 1, the separate snap-fit ​​plate 2, and the lower circular block 3 after splicing is lower than that of the crucible 4, which not only reduces the risk of carbon pollution but also facilitates the circulation of gas in the furnace and the discharge of volatiles.

[0036] Furthermore, the two separate snap-fit ​​plates 2 adopt a concave-convex splicing structure, and the inner sidewall of the lower circular block 3 is provided with a demolding slope to achieve rapid demolding of silicon ingots. The joints of the separate snap-fit ​​plates 2 adopt a splicing sealing structure to reduce melt leakage. The material of the separate snap-fit ​​plates 2 is graphite or carbon composite material.

[0037] Among them, the interlocking or tenon structure between the split snap-fit ​​plates 2 ensures the splicing accuracy, so that each plate can maintain accurate positioning in a high-temperature environment, avoiding structural failure caused by misalignment. The demolding slope design of the inner wall of the lower circular block 3 significantly reduces the contact stress of the silicon ingot, making the demolding process smoother and reducing damage to the surface of the silicon ingot. The splicing sealing structure at the joint of the split snap-fit ​​plates 2 effectively prevents melt leakage through multiple barriers, while allowing necessary thermal expansion displacement, taking into account both sealing and structural reliability. The split snap-fit ​​plates 2 are made of graphite or carbon composite materials, which not only have good high-temperature stability, but also their excellent thermal conductivity ensures uniform heating of the silicon ingot.

[0038] Furthermore, the contact surface between the upper circular block 1 and the crucible 4 is coated with boron nitride or graphite paper to reduce frictional resistance.

[0039] Among them, the boron nitride coating on the contact surface between the upper circular block 1 and the crucible 4 effectively reduces the coefficient of friction, prevents high-temperature adhesion, and reduces thermal stress.

[0040] During use, the pre-reserved thermal expansion gaps and splicing sealing structure between the segments of the split snap-fit ​​plate 2 provide space for subsequent thermal expansion; during assembly, the upper circular block 1 covers the joint of the lower circular block 3 to form a stepped seal; after being placed in the crucible 4, its own weight is used to press the L-shaped bottom of the lower circular block 3 to achieve stable fixation; during crystal growth, the boron nitride coating reduces friction, and the carbon composite material ensures high-temperature stability; after growth is completed, the silicon ingot is successfully demolded by relying on the inner demolding slope, and the segmented structure facilitates quick disassembly and maintenance, preparing for the next round of production. The entire process does not require bolt fixation, achieving efficient and stable continuous production.

[0041] In summary, the upper circular block 1 provides stable support as part of the overall structure, forming a stepped fit with the lower circular block 3, which is spliced ​​from the split snap-fit ​​plate 2. This ensures both structural strength and effective sealing. The ingenious L-shaped structure, combined with the self-weight fixing method of the crucible 4, completely solves the reliability problem of traditional bolted connections in high-temperature environments. The segmented structure, combined with thermal expansion gaps and splicing sealing design, adapts to thermal expansion and contraction while preventing molten leakage. The choice of graphite or carbon composite materials ensures high-temperature stability, while the boron nitride coating significantly improves friction performance. The design that the height of the upper circular block 1, split snap-fit ​​plate 2, and lower circular block 3 is lower than that of the crucible 4 optimizes process observation and gas flow. The inner demolding slope design greatly improves demolding efficiency. As a result, the protective plate spliced ​​from the upper circular block 1, split snap-fit ​​plate 2, and lower circular block 3 exhibits significant advantages in terms of high-temperature stability, sealing performance, ease of assembly and disassembly, and service life, making it particularly suitable for the large-scale production of high-quality silicon crystals.

[0042] Example 2

[0043] Reference Figure 4 This is the second embodiment of the present invention. Unlike the previous embodiment, this embodiment provides a three-lobed structure for the detachable snap-fit ​​plate 2.

[0044] Furthermore, each petal is an arc-shaped plate with a central angle of 120°, made of graphite or carbon composite material.

[0045] During use, the three-lobed split snap-fit ​​plate 2 is positioned by the weight of the crucible 4. When the silicon material melts and expands, the gap between the joints can be adaptively expanded to avoid cracking of the protective plate. When demolding, the three-lobed structure can be radially separated without the need to remove the bolts.

[0046] In summary, the three-lobed split snap-fit ​​plate 2 ensures structural stability at high temperatures and enables boltless quick assembly and disassembly, making it suitable for silicon ingot production.

[0047] Example 3

[0048] Reference Figure 5This is the third embodiment of the present invention. Unlike the previous embodiment, this embodiment provides a detachable snap-fit ​​plate 2 with a four-lobed structure.

[0049] Furthermore, each lobe is a trapezoidal plate with a 90° central angle, made of graphite or carbon composite material.

[0050] During use, the four-lobed split snap-fit ​​plate 2 can automatically release stress when the silicon ingot cools and shrinks. The overall height of the protective plate after splicing the upper circular block 1, the split snap-fit ​​plate 2 and the lower circular block 3 is lower than that of the crucible 4, which reduces the contamination of carbon impurities floating to the surface.

[0051] In summary, the four-lobed split snap-fit ​​plate 2 balances the molding accuracy and demolding efficiency of large-size silicon ingots, making it particularly suitable for the preparation of silicon materials with low oxygen content.

[0052] It is important to note that the constructions and arrangements of this application shown in several different exemplary embodiments are merely illustrative. Although only a few embodiments are described in detail in this disclosure, those who consult this disclosure will readily understand that many modifications are possible (e.g., changes in the size, dimensions, structure, shape and proportion of various elements, as well as parameter values ​​(e.g., temperature, pressure, etc.), mounting arrangements, use of materials, color, orientation, etc.) without substantially departing from the novel teachings and advantages of the subject matter described in this application). For example, an element shown as integrally formed may be composed of multiple parts or elements, the position of elements may be inverted or otherwise altered, and the nature or number or position of discrete elements may be changed or altered. Therefore, all such modifications are intended to be included within the scope of this utility model. The order or sequence of any process or method steps may be changed or rearranged according to alternative embodiments. In the claims, any "device plus function" clause is intended to cover the structure described herein that performs the function, and not only structural equivalents but also equivalent structures. Without departing from the scope of this invention, other substitutions, modifications, alterations, and omissions may be made in the design, operation, and arrangement of the exemplary embodiments. Therefore, this invention is not limited to the specific embodiments, but extends to various modifications that still fall within the scope of the appended claims.

[0053] Furthermore, in order to provide a concise description of exemplary embodiments, not all features of actual embodiments (i.e., those features that are not relevant to the best mode of carrying out the present invention as currently considered, or those features that are not relevant to implementing the present invention) may be omitted.

[0054] It should be understood that numerous specific implementation decisions can be made during the development of any practical implementation, such as in any engineering or design project. Such development efforts may be complex and time-consuming, but for those skilled in the art who benefit from this disclosure, the development effort will be a routine work of design, manufacturing, and production without requiring much experimentation.

[0055] It should be noted that the above embodiments are only used to illustrate the technical solution of this utility model and are not intended to limit it. Although this utility model has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solution of this utility model without departing from the spirit and scope of the technical solution of this utility model, and all such modifications or substitutions should be covered within the scope of the claims of this utility model.

Claims

1. A structure for a crystal growth ingot furnace liner for silicon components, characterized in that: It includes an upper circular block (1), a detachable snap-fit ​​plate (2), a lower circular block (3), and a crucible (4). The upper circular block (1) is an integral circular structure made of carbon composite material. The lower circular block (3) is composed of multiple detachable snap-fit ​​plates (2) spliced ​​together, and has an L-shaped structure on the side.

2. The structure of a crystal growth ingot furnace liner for silicon components according to claim 1, characterized in that: The weight of the crucible (4) and the silicon material inside presses down on the L-shaped bottom of the lower circular block (3), and the height of the lower circular block (3) is greater than the height of the silicon ingot.

3. The structure of a crystal growth ingot furnace liner for silicon components according to claim 2, characterized in that: The split snap-fit ​​plate (2) has a two-lobed, three-lobed or four-lobed structure, with thermal expansion gaps between each lobe.

4. The structure of a crystal growth ingot furnace liner for silicon components according to claim 3, characterized in that: The upper circular block (1) and the lower circular block (3) are fitted in a stepped manner, with the upper circular block (1) covering the joint of the lower circular block (3).

5. The structure of a crystal growth ingot furnace liner for silicon components according to claim 4, characterized in that: The overall height of the upper circular block (1), the split snap-fit ​​plate (2), and the lower circular block (3) after being spliced ​​together is lower than the height of the crucible (4).

6. The structure of a crystal growth ingot furnace liner for silicon components according to claim 5, characterized in that: The detachable snap-fit ​​plates (2) adopt a concave-convex splicing structure.

7. The structure of a crystal growth ingot furnace liner for silicon components according to claim 6, characterized in that: The inner wall of the lower circular block (3) is provided with a demolding slope to achieve rapid demolding of the silicon ingot.

8. The structure of a crystal growth ingot furnace liner for silicon components according to claim 7, characterized in that: The joint of the split snap-fit ​​plate (2) adopts a splicing and sealing structure to reduce melt leakage.

9. The structure of a crystal growth ingot furnace liner for silicon components according to claim 8, characterized in that: The material of the detachable snap-fit ​​plate (2) is graphite or carbon composite material.

10. The structure of a crystal growth ingot furnace liner for silicon components according to claim 9, characterized in that: The contact surface between the upper circular block (1) and the crucible (4) is coated with boron nitride or graphite paper to reduce frictional resistance.