Temperature-controlled indium arsenide crystal growth apparatus
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- NANTONG JINGHENG TECHNOLOGY CO LTD
- Filing Date
- 2025-09-10
- Publication Date
- 2026-08-07
AI Technical Summary
[0003]现有技术中,在生产砷化铟时,一般都是使用晶体生长装置来生成砷化铟晶体,晶体生长装置一般是通过加热器对砷化铟进行加热熔化,然后降温等待砷化铟晶体生长,传统的晶体生长装置上的加热器都是固定安装在晶体生长装置的内部,这样的设置方式,使得当加热器发生损坏时,不方便对加热器进行更换或维修,更换或维修的过程繁琐复杂,浪费时间和精力,降低了晶体生长装置的实用性
[0013] 1. Compared with existing technologies, this temperature-controlled indium arsenide crystal growth apparatus, through the coordination of components such as furnace body, support base, crucible, sealing cover, furnace cover, temperature measuring thermocouple, mounting cylinder, heater, limit block, slider, fixing bolt, mounting bolt and pull handle, realizes the function of quickly replacing the heater, improves the installation method of the heater in the existing technology, and makes the heater quick to disassemble and assemble when it is damaged, thus making the replacement or maintenance of the heater more convenient, saving time and effort, and improving the practicality of the crystal growth apparatus.
Smart Images

Figure CN224605143U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of crystal preparation technology, and in particular to a temperature-controlled indium arsenide crystal growth device. Background Technology
[0002] Indium arsenide is a compound semiconductor with high electron mobility and mobility-to-mobility ratio, low magnetoresistive effect and small temperature coefficient of resistance. It is an ideal material for manufacturing Hall effect devices and magnetoresistive devices, as well as an ideal substrate material for ultra-long wavelength lasers and detectors.
[0003] In the existing technology, in the production of indium arsenide, crystal growth equipment is generally used to generate indium arsenide crystals. Crystal growth equipment generally heats and melts indium arsenide through a heater, and then cools it down to wait for the indium arsenide crystals to grow. In traditional crystal growth equipment, the heater is fixedly installed inside the crystal growth equipment. This setting makes it inconvenient to replace or repair the heater when it is damaged. The replacement or repair process is cumbersome and complicated, wasting time and effort, and reducing the practicality of the crystal growth equipment. Utility Model Content
[0004] The purpose of this invention is to address the shortcomings of existing technologies by proposing a temperature-controlled indium arsenide crystal growth device.
[0005] To achieve the above objectives, the present invention adopts the following technical solution: a temperature-controlled indium arsenide crystal growth device, comprising a furnace body and a support base, wherein the support base is fixedly installed inside the furnace body, a crucible is arranged inside the furnace body via the support base, a cap is fitted onto the top of the crucible, a furnace cover is fitted onto the top of the furnace body, five thermocouples are arranged on the outer surface of the furnace body, an installation cylinder is slidably connected to the inner wall of the furnace body, five heaters are arranged on the inner wall of the installation cylinder, limit blocks are fixedly installed on the outer walls of the five heaters, two sliders are fixedly installed on the outer wall of the installation cylinder, five fixing bolts are threadedly connected to the side walls of the two sliders, two installation bolts are threadedly connected to the outer surface of the furnace body, and an installation assembly is arranged on the outer surface of the furnace body.
[0006] As a further description of the above technical solution: the limiting blocks on the outer surfaces of the five heaters gradually narrow from top to bottom, the inner wall of the mounting cylinder is provided with limiting grooves that are adapted to the limiting blocks, the fixing bolts penetrate the side wall of the slider and extend into the interior of the mounting cylinder, and the five fixing bolts are respectively inserted into the limiting blocks on the outer walls of the corresponding heaters. By setting the above components, the function of positioning and fixing the five heaters is realized.
[0007] As a further description of the above technical solution: the inner wall of the furnace body has two grooves that are adapted to the corresponding sliders. The mounting bolts pass through the side wall of the furnace body and extend into the interior of the furnace body. The mounting bolts are inserted into the side wall of the sliders. By setting the above components, the function of positioning and fixing the mounting frame is realized.
[0008] As a further description of the above technical solution: two handles are fixedly installed at the top of the mounting cylinder, and two placement slots are opened on the upper surface of the furnace body. The two handles are respectively placed in the corresponding placement slots. By setting the above components, the function of storing the handles is realized.
[0009] As a further description of the above technical solution: the mounting assembly includes a fixing plate, which is fixedly installed on the outer surface of the furnace body. The side wall of the fixing plate has five mounting holes. Mounting frames are fixedly installed on the side walls of the fixing plate around the five mounting holes. Positioning blocks are fixedly installed on the inner walls of the mounting frames. Positioning rods are inserted into the outer walls of the mounting frames. Pull blocks are fixedly installed on the end of the positioning rod away from the mounting frames. Tension springs are sleeved on the outer surface of the positioning rod. By setting up the mounting assembly, the function of quickly assembling and disassembling the temperature measuring thermocouple is realized.
[0010] As a further description of the above technical solution: the longitudinal coordinates of the five mounting holes correspond to the positions of the five heaters, the probes of the five temperature measuring couplers are respectively installed inside the corresponding mounting holes, the five mounting frames are respectively fitted onto the outer surface of the corresponding temperature measuring couplers, and the outer surface of the five temperature measuring couplers is provided with positioning grooves that are adapted to the positioning blocks. By setting the above components, the function of limiting the temperature measuring couplers is realized.
[0011] As a further description of the above technical solution: the positioning rod penetrates through the outer wall of the mounting frame and extends into the interior of the mounting frame. The five positioning rods are respectively inserted into the outer wall of the corresponding temperature measuring coupler. The two ends of the tension spring are respectively fixedly connected to the outer wall of the mounting frame and the side wall of the pull block. By setting the above components, the function of fixing the temperature measuring coupler is realized.
[0012] This utility model has the following beneficial effects:
[0013] 1. Compared with existing technologies, this temperature-controlled indium arsenide crystal growth apparatus, through the coordination of components such as furnace body, support base, crucible, sealing cover, furnace cover, temperature measuring thermocouple, mounting cylinder, heater, limit block, slider, fixing bolt, mounting bolt and pull handle, realizes the function of quickly replacing the heater, improves the installation method of the heater in the existing technology, and makes the heater quick to disassemble and assemble when it is damaged, thus making the replacement or maintenance of the heater more convenient, saving time and effort, and improving the practicality of the crystal growth apparatus.
[0014] 2. Compared with the prior art, this temperature-controlled indium arsenide crystal growth device, through the cooperation of components such as a fixing plate, mounting holes, mounting frame, positioning block, positioning rod, pull block and tension spring, realizes the function of quickly assembling and disassembling the temperature measuring coupler. It improves the fixing method of the temperature measuring coupler in the prior art, so that when the temperature measuring coupler fails, it can be quickly disassembled and replaced, thus improving the convenience of the crystal growth device. Attached Figure Description
[0015] Figure 1 This is a three-dimensional structural diagram of a temperature-controlled indium arsenide crystal growth device proposed in this utility model.
[0016] Figure 2 This is a schematic diagram of the support structure of a temperature-controlled indium arsenide crystal growth device proposed in this utility model.
[0017] Figure 3 This is a schematic diagram of the heater structure of a temperature-controlled indium arsenide crystal growth apparatus proposed in this utility model;
[0018] Figure 4 This is a schematic diagram of the mounting cylinder structure of a temperature-controlled indium arsenide crystal growth device proposed in this utility model;
[0019] Figure 5 This is a schematic diagram of the installation components of a temperature-controlled indium arsenide crystal growth device proposed in this utility model;
[0020] Figure 6 This is a schematic diagram of the mounting frame structure of a temperature-controlled indium arsenide crystal growth device proposed in this utility model.
[0021] Legend:
[0022] 1. Furnace body; 2. Support base; 3. Crucible; 4. Cover; 5. Furnace lid; 6. Thermocouple; 7. Mounting cylinder; 8. Heater; 9. Limiting block; 10. Sliding block; 11. Fixing bolt; 12. Mounting bolt; 13. Pull handle; 14. Fixing plate; 15. Mounting hole; 16. Mounting frame; 17. Positioning block; 18. Positioning rod; 19. Pull block; 20. Tension spring. Detailed Implementation
[0023] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.
[0024] Reference Figures 1 to 6 This utility model provides a temperature-controlled indium arsenide crystal growth apparatus, comprising a furnace body 1 and a support base 2. The support base 2 is fixedly installed inside the furnace body 1. A crucible 3 is arranged inside the furnace body 1 via the support base 2. A cap 4 is fitted onto the top of the crucible 3. A furnace cover 5 is fitted onto the top of the furnace body 1. Five thermocouples 6 are arranged on the outer surface of the furnace body 1. An installation cylinder 7 is slidably connected to the inner wall of the furnace body 1. Five heaters 8 are arranged on the inner wall of the installation cylinder 7. Limiting blocks 9 are fixedly installed on the outer walls of the five heaters 8. The limiting blocks 9 on the outer surfaces of the five heaters 8 gradually narrow from top to bottom. The inner wall of the installation cylinder 7 has limiting grooves adapted to the limiting blocks 9. Two... Each slider 10 has two grooves on its inner wall that are adapted to the corresponding slider 10. The side walls of both sliders 10 are threaded with five fixing bolts 11. The fixing bolts 11 penetrate the side walls of the sliders 10 and extend into the interior of the mounting cylinder 7. The five fixing bolts 11 are respectively inserted into the limiting blocks 9 on the outer wall of the corresponding heater 8. The outer surface of the furnace body 1 is threaded with two mounting bolts 12. The mounting bolts 12 penetrate the side walls of the furnace body 1 and extend into the interior of the furnace body 1. The mounting bolts 12 are inserted into the side walls of the sliders 10. The top of the mounting cylinder 7 is fixedly installed with two handles 13. The upper surface of the furnace body 1 has two placement slots, and the two handles 13 are respectively placed inside the corresponding placement slots.
[0025] By setting up a furnace body 1, support base 2, crucible 3, sealing cover 4, furnace cover 5, temperature measuring thermocouple 6, mounting cylinder 7, heater 8, limit block 9, slider 10, fixing bolt 11, mounting bolt 12, and pull handle 13, the function of quickly replacing the heater 8 is realized, which improves the installation method of the heater 8 in the existing technology. When the heater 8 is damaged, it can be quickly disassembled and reassembled, making it more convenient to replace or repair the heater 8, saving time and effort, and improving the practicality of the crystal growth device.
[0026] An installation assembly is provided on the outer surface of the furnace body 1. The installation assembly includes a fixing plate 14, which is fixedly installed on the outer surface of the furnace body 1. Five mounting holes 15 are opened on the side wall of the fixing plate 14. The longitudinal coordinates of the five mounting holes 15 correspond to the positions of the five heaters 8. The probes of the five temperature measuring couplers 6 are respectively installed inside the corresponding mounting holes 15. Mounting frames 16 are fixedly installed on the side walls of the fixing plate 14 around the five mounting holes 15. The five mounting frames 16 are respectively fitted onto the outer surface of the corresponding temperature measuring couplers 6. A positioning block 17 is fixedly installed on the wall. The outer surfaces of the five temperature measuring thermocouples 6 are all provided with positioning grooves that are compatible with the positioning block 17. A positioning rod 18 is inserted into the outer wall of the mounting frame 16. The positioning rod 18 passes through the outer wall of the mounting frame 16 and extends into the interior of the mounting frame 16. The five positioning rods 18 are respectively inserted into the outer wall of the corresponding temperature measuring thermocouple 6. A pull block 19 is fixedly installed at the end of the positioning rod 18 away from the mounting frame 16. A tension spring 20 is sleeved on the outer surface of the positioning rod 18. The two ends of the tension spring 20 are respectively fixedly connected to the outer wall of the mounting frame 16 and the side wall of the pull block 19.
[0027] By setting up a fixing plate 14, mounting holes 15, mounting frame 16, positioning block 17, positioning rod 18, pull block 19 and tension spring 20, the function of quickly disassembling and assembling the temperature measuring coupler 6 is realized, which improves the fixing method of the temperature measuring coupler 6 in the prior art. When the temperature measuring coupler 6 fails, it can be quickly disassembled and replaced, which improves the convenience of the crystal growth device.
[0028] Working principle: When replacing the heater 8 of the crystal growth apparatus, first pull the furnace cover 5 off the furnace body 1, then tighten the two mounting bolts 12 so that both mounting bolts 12 extend away from the furnace body 1. After both mounting bolts 12 are separated from the slider 10, release the fixing of the mounting cylinder 7. Then pull the handle 13 upwards to pull the mounting cylinder 7 outwards from the inside of the furnace body 1, so that the mounting cylinder 7 slides upwards along the inner wall of the furnace body 1. The slider 10 slides inside the groove. After the mounting cylinder 7 slides out of the inside of the furnace body 1... Tighten the fixing bolts 11 on the side walls of the two sliders 10 so that the fixing bolts 11 extend away from the sliders 10. After the fixing bolts 11 separate from the limiting block 9, the fixing of the heater 8 is released. Then pull the heater 8 outward from the mounting cylinder 7 so that the heater 8 slides inside the mounting cylinder 7 and the limiting block 9 slides inside the limiting groove. After the heater 8 slides out from the inside of the mounting cylinder 7, the disassembly of the heater 8 is completed. Then take out the new heater 8 and reverse the above operation to install the new heater 8 and complete the replacement of the heater 8.
[0029] When replacing the temperature measuring coupler 6, pull the pull block 19 on the outer mounting frame 16 of the temperature measuring coupler 6 to be replaced. The pull block 19 pulls the positioning rod 18, causing the positioning rod 18 to extend away from the mounting frame 16. The tension spring 20 is stretched and deformed. After the positioning rod 18 separates from the temperature measuring coupler 6, the fixing of the temperature measuring coupler 6 is released. Then pull the temperature measuring coupler 6, causing the temperature measuring coupler 6 to slide outward from the inside of the mounting frame 16. The positioning block 17 slides inside the positioning groove. After the probe of the temperature measuring coupler 6 slides out from the inside of the mounting hole 15, the disassembly of the temperature measuring coupler 6 is completed. Then take out the new temperature measuring coupler 6 and reverse the above operation to fix the new temperature measuring coupler 6, thus completing the replacement of the temperature measuring coupler 6.
[0030] When growing indium arsenide crystals using a crystal growth apparatus, indium arsenide raw material is first added to the inside of crucible 3. Then, the cap 4 is placed on top of crucible 3 to seal it. Next, the furnace lid 5 is placed on top of furnace body 1 to seal it. Then, five heaters 8 are started. By controlling the five heaters 8 to raise the temperature to the appropriate temperature, the indium arsenide raw material is melted. After the indium arsenide raw material has melted, the temperature of the heaters 8 is continuously controlled to change, thereby cooling and crystallizing the indium arsenide melt, thus completing the indium arsenide crystal growth.
[0031] Finally, it should be noted that the above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Although the present utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.
Claims
1. A temperature-controlled indium arsenide crystal growth apparatus, comprising a furnace body (1) and a support base (2), characterized in that: The support base (2) is fixedly installed inside the furnace body (1). A crucible (3) is provided inside the furnace body (1) through the support base (2). A cap (4) is fitted on the top of the crucible (3). A furnace cover (5) is fitted on the top of the furnace body (1). Five thermocouples (6) are provided on the outer surface of the furnace body (1). An installation cylinder (7) is slidably connected to the inner wall of the furnace body (1). Five heaters (8) are provided on the inner wall of the installation cylinder (7). Limit blocks (9) are fixedly installed on the outer walls of the five heaters (8). Two sliders (10) are fixedly installed on the outer wall of the installation cylinder (7). Five fixing bolts (11) are threadedly connected to the side walls of the two sliders (10). Two installation bolts (12) are threadedly connected to the outer surface of the furnace body (1). An installation assembly is provided on the outer surface of the furnace body (1).
2. The temperature-controlled indium arsenide crystal growth apparatus according to claim 1, characterized in that: The limiting blocks (9) on the outer surface of the five heaters (8) gradually narrow from top to bottom. The inner wall of the mounting cylinder (7) is provided with a limiting groove that matches the limiting block (9). The fixing bolt (11) passes through the side wall of the slider (10) and extends into the interior of the mounting cylinder (7). The five fixing bolts (11) are respectively inserted into the limiting block (9) on the outer wall of the corresponding heater (8).
3. The temperature-controlled indium arsenide crystal growth apparatus according to claim 1, characterized in that: The inner wall of the furnace body (1) has two grooves that are adapted to the corresponding sliders (10). The mounting bolts (12) penetrate the side wall of the furnace body (1) and extend into the interior of the furnace body (1). The mounting bolts (12) are inserted into the side wall of the sliders (10).
4. The temperature-controlled indium arsenide crystal growth apparatus according to claim 1, characterized in that: Two handles (13) are fixedly installed at the top of the mounting cylinder (7), and two placement slots are opened on the upper surface of the furnace body (1), with the two handles (13) respectively placed inside the corresponding placement slots.
5. The temperature-controlled indium arsenide crystal growth apparatus according to claim 1, characterized in that: The mounting assembly includes a fixing plate (14), which is fixedly mounted on the outer surface of the furnace body (1). The fixing plate (14) has five mounting holes (15) on its side wall. Mounting frames (16) are fixedly mounted on the side walls of the fixing plate (14) around the five mounting holes (15). A positioning block (17) is fixedly mounted on the inner wall of the mounting frame (16). A positioning rod (18) is inserted into the outer wall of the mounting frame (16). A pull block (19) is fixedly mounted on the end of the positioning rod (18) away from the mounting frame (16). A tension spring (20) is sleeved on the outer surface of the positioning rod (18).
6. The temperature-controlled indium arsenide crystal growth apparatus according to claim 5, characterized in that: The longitudinal coordinates of the five mounting holes (15) correspond to the positions of the five heaters (8), the probes of the five temperature measuring couplers (6) are respectively installed inside the corresponding mounting holes (15), the five mounting frames (16) are respectively fitted on the outer surface of the corresponding temperature measuring couplers (6), and the outer surface of the five temperature measuring couplers (6) is provided with positioning grooves that are compatible with the positioning blocks (17).
7. The temperature-controlled indium arsenide crystal growth apparatus according to claim 5, characterized in that: The positioning rod (18) passes through the outer wall of the mounting frame (16) and extends into the interior of the mounting frame (16). The five positioning rods (18) are respectively inserted into the outer wall of the corresponding temperature measuring coupler (6). The two ends of the tension spring (20) are respectively fixedly connected to the outer wall of the mounting frame (16) and the side wall of the pull block (19).