Oxidation furnace for semiconductor processing

Abstract

The utility model provides a kind of oxidation furnace for semiconductor processing, including support, the middle part of the support is sequentially fixed with multiple furnace body from top to bottom, the front discharge end side of the furnace body is correspondingly provided with linear module, the moving end of the linear module is fixed with mounting bracket, the rear end middle part of the mounting bracket is movably connected with deflection shaft, the rear end of the deflection shaft is fixedly connected with the front end of silicon wafer holder, the rear end of the silicon wafer holder extends to the inside of furnace body, deflection electric push rod drives guide frame to do lifting movement, complete pin shaft moves in guide hole, cooperate connecting frame drives deflection shaft to deflect on mounting bracket, deflection shaft drives silicon wafer holder to deflect, complete the height reduction of one side of bottom support on silicon wafer holder, it is convenient for user to take out silicon wafer on the silicon wafer holder from interval frame, and the design gap between furnace body is smaller, it is convenient for worker to take silicon wafer located above support.

Description

Technical Field

[0001] This utility model mainly relates to the field of oxidation furnace technology, specifically to an oxidation furnace for semiconductor processing. Background Technology

[0002] By subjecting the silicon wafer material used in semiconductor manufacturing to a high-temperature oxidation reaction in an oxidation furnace, a silicon dioxide thin film with excellent insulating properties is formed on the surface of the silicon wafer. This can effectively improve the leakage current of semiconductor devices and form insulation isolation between different circuit areas.

[0003] The oxidation furnaces arranged in the workshop are mostly designed with a double-layer furnace body vertically stacked. For small-sized silicon wafers, even smaller furnace bodies can be used, that is, the oxidation furnace has a three-layer or four-layer stacked design. For the current double-layer furnace body design gap requirements, the gap design requirements for the silicon wafer to be taken out of the silicon wafer rack need to be taken into account. The larger the silicon wafer size, the larger the gap between the silicon wafer rack in the lower furnace body and the upper furnace body will also increase.

[0004] The inventors proposed an oxidation furnace for semiconductor processing. By making the silicon wafer holder deflectable, the height of one side of the base is reduced, so that when the user pulls the silicon wafer out of the spacer, there is no need to lift it too high. This allows the user to obtain less gap between the furnace bodies when designing stacked furnace bodies. At the same time, the lower gap can reduce the height of silicon wafers to be picked up and placed in the upper furnace body. Utility Model Content

[0005] 1. Technical problem solved by the utility model: This invention provides an oxidation furnace for semiconductor processing, which solves the technical problem of inconvenient silicon wafer handling caused by the large gap design of the furnace body in existing equipment.

[0006] 2. Technical Solution: To achieve the above objectives, the technical solution provided by this utility model is as follows: an oxidation furnace for semiconductor processing, including a support frame, a plurality of furnace bodies are fixedly mounted from top to bottom in the middle of the support frame, a linear module is correspondingly arranged on one side of the front discharge end of the furnace body, a mounting frame is fixedly mounted on the moving end of the linear module, a deflection shaft is movably connected to the middle of the rear end of the mounting frame, the rear end of the deflection shaft is fixedly connected to the front end of the silicon wafer frame, and the rear end of the silicon wafer frame extends into the furnace body.

[0007] Furthermore, a guide seat is fixedly provided in the middle of the mounting frame, and a guide rod is movably inserted into the middle of the guide seat. The bottom end of the guide rod movably extends through the top to the bottom of the mounting frame.

[0008] Furthermore, a deflection electric actuator is fixedly provided at the left end of the mounting bracket, a guide frame is fixedly provided at the top output end of the deflection electric actuator, a guide hole is provided in the middle of the guide frame, and the bottom right side of the guide frame is fixedly connected to the top of the guide rod.

[0009] Furthermore, the rear end of the mounting bracket is fixedly connected to the front of the furnace door, the middle part of the furnace door is movably connected to the middle part of the deflection shaft, and support rods are fixedly provided on both the left and right sides of the bottom of the furnace door, with the rear end of the support rods movably inserted into the left and right sides of the bottom of the furnace body.

[0010] Furthermore, a connecting frame is fixedly provided at the front end of the deflection shaft, and a pin is movably connected to the top of the connecting frame via a bearing. The front end of the pin is movably connected to the guide hole of the guide frame via a bearing.

[0011] Furthermore, a base is fixed to the bottom of the silicon wafer holder, and the ratio of the arc length of the base to the outer edge of the front arc of the silicon wafer holder is 1:1.8. Spacers are evenly spaced in the middle of the silicon wafer holder, and silicon wafer placement gaps are divided between adjacent spacers.

[0012] 3. Beneficial effects: Compared with the prior art, the technical solution provided by this utility model has the following advantages: This utility model provides an oxidation furnace for semiconductor processing. A deflecting electric push rod drives the guide frame to move up and down, completing the movement of the pin shaft in the guide hole. In conjunction with the connecting frame, the deflecting shaft drives the deflection shaft to deflect on the mounting frame. The deflection shaft drives the silicon wafer rack to deflect, completing the reduction of the height of one side of the bottom support on the silicon wafer rack. This makes it easier for users to remove the silicon wafers on the silicon wafer rack from between the spacers. At the same time, the smaller design gap between the furnace bodies makes it easier for workers to pick up the silicon wafers located above the support. The parts of the device not covered herein are the same as or can be implemented using existing technologies. Attached Figure Description

[0013] Figure 1 This is a perspective view of the structure of this utility model; Figure 2 This is a perspective view of the mounting bracket structure of this utility model; Figure 3 This is a utility model Figure 2 Enlarged view of the structure at point A in the middle; Figure 4 This is a perspective view of the deflection shaft structure of this utility model; Figure 5 This is a utility model Figure 4 Enlarged view of the structure at point B; Figure 6 This is a schematic diagram showing the height to which the silicon wafers need to be lifted when the silicon wafer holder structure of this utility model is picked up.

[0014] Figure label: 1-Staff; 2-Furnace body; 3-Linear module; 4-Mounting bracket; 41-Guide seat; 42-Guide rod; 5-Deflection electric actuator; 51-Guide frame; 52-Guide hole; 6-Furnace door; 61-Support rod; 7-Deflection shaft; 71-Connecting bracket; 72-Pin; 8-Silicon wafer holder; 81-Base support; 82-Spacer rack. Detailed Implementation

[0015] To facilitate understanding of this utility model, a more comprehensive description of the utility model will be given below with reference to the accompanying drawings, which show several embodiments of the utility model. However, the utility model can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the utility model will be more thorough and complete.

[0016] It should be noted that when an element is referred to as being "fixed to" another element, it can be directly on the other element or there may be an intervening element; when an element is referred to as being "connected to" another element, it can be directly connected to the other element or there may be an intervening element; the terms "vertical," "horizontal," "left," "right," and similar expressions used in this document are for illustrative purposes only.

[0017] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains; the terminology used herein in the description of this invention is for the purpose of describing particular embodiments only and is not intended to limit the invention; the term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0018] See attached document Figure 1-6 This utility model provides an oxidation furnace for semiconductor processing, including a support 1. Multiple furnace bodies 2 are fixedly mounted in the middle of the support 1 from top to bottom. A linear module 3 is correspondingly arranged on one side of the front discharge end of the furnace body 2. A mounting frame 4 is fixedly mounted on the moving end of the linear module 3. A deflection shaft 7 is movably connected to the middle of the rear end of the mounting frame 4. The rear end of the deflection shaft 7 is fixedly connected to the front end of the silicon wafer frame 8. The rear end of the silicon wafer frame 8 extends into the interior of the furnace body 2.

[0019] The linear module 3 works in conjunction with the mounting bracket 4 to open the furnace door 6 and simultaneously pull the silicon wafer rack 8 out of the furnace body 2, making it convenient for users to remove the silicon wafers from the silicon wafer rack 8.

[0020] In this embodiment, a guide seat 41 is fixedly provided in the middle of the mounting frame 4, and a guide rod 42 is movably inserted into the middle of the guide seat 41. The bottom end of the guide rod 42 movably passes through the top to the bottom of the mounting frame 4. A deflection electric actuator 5 is fixedly provided at the left end of the mounting frame 4. A guide frame 51 is fixedly provided at the top output end of the deflection electric actuator 5. A guide hole 52 is provided in the middle of the guide frame 51, and the bottom right side of the guide frame 51 is fixedly connected to the top of the guide rod 42.

[0021] The deflection electric actuator 5 drives the guide frame 51 to move up and down, completing the movement of the pin 72 within the guide hole 52. In conjunction with the connecting frame 71, the deflection shaft 7 is driven to deflect on the mounting frame 4. The deflection shaft 7 drives the silicon wafer frame 8 to deflect, thus lowering the height of one side of the bottom support 81 on the silicon wafer frame 8. This makes it easier for users to remove the silicon wafers on the silicon wafer frame 8 from between the spacers 82. At the same time, the smaller design gap between the furnace bodies 2 makes it easier for workers to pick up the silicon wafers located above the support 1.

[0022] In this embodiment, the rear end of the mounting bracket 4 is fixedly connected to the front of the furnace door 6, the middle part of the furnace door 6 is movably connected to the middle part of the deflection shaft 7, and support rods 61 are fixedly provided on the left and right sides of the bottom of the furnace door 6. The rear end of the support rods 61 is movably inserted into the left and right sides of the bottom of the furnace body 2.

[0023] The furnace door 6 cooperates with the support rod 61 to provide support and protection for the movement of the furnace door 6 when the linear module 3 drives the mounting frame 4 to move. The furnace door 6 and the mounting frame 4 cooperate to provide support for the combination of the deflection shaft 7 and the silicon wafer frame 8.

[0024] In this embodiment, a connecting frame 71 is fixedly provided at the front end of the deflection shaft 7, and a pin 72 is movably connected to the top of the connecting frame 71 through a bearing. The front end of the pin 72 is movably connected to the guide hole 52 of the guide frame 51 through a bearing.

[0025] The deflection shaft 7 is fixedly assembled with the connecting frame 71, and the pin 72 is movably assembled between the connecting frame 71 and the guide frame 51 through two bearings. When the working height of the guide frame 51 changes, the pin 72 and the connecting frame 71 cooperate to drive the deflection shaft 7 to deflect.

[0026] In this embodiment, a base support 81 is fixed at the bottom of the silicon wafer holder 8. The ratio of the arc length of the base support 81 to the outer edge of the arc at the front end of the silicon wafer holder 8 is 1:1.8. Spacers 82 are evenly spaced in the middle of the silicon wafer holder 8, and a silicon wafer placement gap is divided between adjacent spacers 82.

[0027] The base 81 provides support for the silicon wafers on the silicon wafer holder 8. The design of the spacer 82 completes the spacing of multiple silicon wafers, making it convenient for the silicon wafer holder 8 to support the silicon wafers for oxidation treatment inside the furnace body 2.

[0028] The above-described embodiments are merely illustrative of certain implementations of this utility model, and their descriptions are relatively specific and detailed. However, they should not be construed as limiting the scope of this utility model patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this utility model, and these modifications and improvements all fall within the protection scope of this utility model. Therefore, the protection scope of this utility model patent should be determined by the appended claims.

Claims

1. An oxidation furnace for semiconductor processing, characterized in that: The system includes a support (1), and multiple furnace bodies (2) are fixedly mounted on the middle of the support (1) from top to bottom. A linear module (3) is provided on one side of the front discharge end of the furnace body (2). A mounting frame (4) is fixedly mounted on the moving end of the linear module (3). A deflection shaft (7) is movably connected to the middle of the rear end of the mounting frame (4). The rear end of the deflection shaft (7) is fixedly connected to the front end of the silicon wafer frame (8). The rear end of the silicon wafer frame (8) extends into the interior of the furnace body (2).

2. The oxidation furnace for semiconductor processing according to claim 1, characterized in that: The mounting bracket (4) has a guide seat (41) fixed in the middle, and a guide rod (42) is movably inserted into the middle of the guide seat (41). The bottom end of the guide rod (42) movably passes through the top to the bottom of the mounting bracket (4).

3. The oxidation furnace for semiconductor processing according to claim 1, characterized in that: The left end of the mounting bracket (4) is fixedly provided with a deflection electric actuator (5), the top output end of the deflection electric actuator (5) is fixedly provided with a guide frame (51), the middle part of the guide frame (51) is provided with a guide hole (52), and the bottom right side of the guide frame (51) is fixedly connected to the top of the guide rod (42).

4. The oxidation furnace for semiconductor processing according to claim 1, characterized in that: The rear end of the mounting bracket (4) is fixedly connected to the front of the furnace door (6), the middle part of the furnace door (6) is movably connected to the middle part of the deflection shaft (7), and the bottom left and right sides of the furnace door (6) are fixedly provided with support rods (61), the rear end of the support rods (61) is movably inserted into the bottom left and right sides of the furnace body (2).

5. An oxidation furnace for semiconductor processing according to claim 1, characterized in that: The front end of the deflection shaft (7) is fixedly provided with a connecting frame (71), and the top of the connecting frame (71) is movably connected to a pin (72) through a bearing. The front end of the pin (72) is movably connected to the guide hole (52) of the guide frame (51) through a bearing.

6. An oxidation furnace for semiconductor processing according to claim 1, characterized in that: The bottom of the silicon wafer holder (8) is fixed with a base support (81). The arc length of the base support (81) is 1:1.8 to the outer edge of the front arc of the silicon wafer holder (8). Spacers (82) are equally spaced in the middle of the silicon wafer holder (8). There are silicon wafer placement gaps between adjacent spacers (82).

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