A mosfet short circuit performance test system

Abstract

The utility model relates to a kind of mosfet short-circuit performance test system, including mosfet and control chip, the control chip is IR2110, the gate of mosfet is electrically connected with the LO pin of IR2110, further include comparator IC1, the same phase input end of the comparator IC1 is electrically connected with the source of mosfet, while the same phase input end of the comparator IC1 is also electrically connected with an electric resistance R3, electric resistance R3 is electrically connected with electric resistance R5 and electric resistance R6 respectively, electric resistance R5 is electrically connected with power interface, electric resistance R6 is grounded, the electric resistance R6 is also electrically connected with an electric resistance R4, electric resistance R4 is electrically connected with the opposite phase input end of comparator IC1, the output end of comparator IC1 is electrically connected with the SD interface of IR2110 by diode D3.The utility model solves the error problem caused by insufficient stability in the process of mosfet short-circuit test, ensure the effectiveness and repeatability of short-circuit performance test.

Description

Technical Field

[0001] This utility model relates to the field of circuits, and more specifically, to a MOSFET short-circuit performance testing system. Background Technology

[0002] In MOSFET applications, short-circuit performance testing is a crucial step in evaluating their reliability. However, existing MOSFET short-circuit performance testing systems have significant drawbacks: Firstly, the sensitivity and anti-interference capabilities of the short-circuit detection circuit are insufficient, and traditional current sampling and comparison mechanisms are easily affected by noise, making it difficult to accurately capture the instantaneous current surge during a short circuit, leading to biased test results. Secondly, the protection mechanism has a slow response time; even if a short-circuit signal is detected, the driver chip cannot quickly turn off the MOSFET, leaving it in a short-circuit state for an extended period. This not only compromises the accuracy of the test data but may also cause permanent damage to the MOSFET, making it impossible to effectively assess its true short-circuit withstand performance. Utility Model Content

[0003] The technical problem to be solved by this utility model is to provide a MOSFET short-circuit performance testing system in view of the above-mentioned defects of the prior art.

[0004] The technical solution adopted by this utility model to solve its technical problem is:

[0005] Construct a MOSFET short-circuit performance testing system, comprising:

[0006] The system includes a MOSFET and a control chip, wherein the control chip is an IR2110. The gate of the MOSFET is electrically connected to the LO pin of the IR2110. The system also includes a comparator IC1, the non-inverting input of which is electrically connected to the source of the MOSFET. The non-inverting input of the comparator IC1 is also electrically connected to a resistor R3. Resistor R3 is electrically connected to resistors R5 and R6. Resistor R5 is electrically connected to the power interface, and resistor R6 is grounded. Resistor R6 is also electrically connected to a resistor R4, which is electrically connected to the inverting input of the comparator IC1. The output of the comparator IC1 is electrically connected to the SD interface of the IR2110 through diode D3.

[0007] Furthermore, the VCC pin of the IR2110 is electrically connected to the power interface, and the VCC interface of the IR2110 is electrically connected to a capacitor C1, which is grounded.

[0008] Furthermore, the comparator IC1 is electrically connected to the power interface, and the output terminal of the comparator IC1 is electrically connected to a resistor R2, which is also electrically connected to the power interface.

[0009] Furthermore, the COM pin of the IR2110 is electrically connected to the drain of the MOSFET, and the COM pin of the IR2110 is electrically connected to a Zener diode D2 and a capacitor C2, respectively, with the Zener diode D2 and capacitor C2 grounded.

[0010] Furthermore, a diode D1 is electrically connected between the non-inverting input terminal of the comparator IC1 and the source of the MOSFET.

[0011] The beneficial effects of this utility model are as follows:

[0012] By accurately comparing the sampled voltage with the reference voltage using comparator IC1, abnormal current increases during short circuits can be detected quickly and sensitively, solving the problem of inaccurate detection in existing technologies and providing reliable data for short-circuit performance testing. When comparator IC1 detects a short circuit and outputs a high level, diode D3 quickly triggers the SD pin of IR2110, immediately disabling the LO pin's drive signal and achieving rapid MOSFET turn-off. This design solves the problem of lagging protection mechanisms, shortening the MOSFET short-circuit duration, protecting the device from damage, and accurately testing its response characteristics under short-circuit conditions. IR2110, combined with Zener diode D2 and capacitor C2, stabilizes the drive circuit potential; capacitor C1 filters the power supply; and diode D1 prevents abnormal voltage surges. These multiple measures ensure stable circuit operation. This invention solves the error problem caused by insufficient stability during testing, ensuring the effectiveness and repeatability of short-circuit performance testing. Attached Figure Description

[0013] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the utility model will be further described below in conjunction with the accompanying drawings and embodiments. The drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0014] Figure 1 This is a circuit diagram of a preferred embodiment of the MOSFET short-circuit performance testing system of this utility model. Detailed Implementation

[0015] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, a clear and complete description will be provided below in conjunction with the technical solutions in the embodiments of this utility model. Obviously, the described embodiments are some, but not all, embodiments of this utility model. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0016] The preferred embodiment of this utility model is a MOSFET short-circuit performance testing system, such as... Figure 1 As shown, the system includes a MOSFET and a control chip, namely an IR2110. The gate of the MOSFET is electrically connected to the LO pin of the IR2110, and the COM pin of the IR2110 is electrically connected to the drain of the MOSFET. The COM pin of the IR2110 is also electrically connected to a Zener diode D2 and a capacitor C2, which are grounded. The system also includes a comparator IC1. The non-inverting input of the comparator IC1 is electrically connected to the source of the MOSFET. The non-inverting input of the comparator IC1 is also electrically connected to a resistor R3, which is connected to resistors R5 and R6. Resistor R5 is electrically connected to the power supply interface, and resistor R6 is grounded. Resistor R6 is also electrically connected to a resistor R4, which is electrically connected to the inverting input of the comparator IC1. The output of the comparator IC1 is electrically connected to the SD interface of the IR2110 through a diode D3. The VCC pin of the IR2110 is electrically connected to the power interface. A capacitor C1 is electrically connected to the VCC interface of the IR2110, and capacitor C1 is grounded. The comparator IC1 is electrically connected to the power interface, and a resistor R2 is electrically connected to the output of the comparator IC1. Resistor R2 is also electrically connected to the power interface. A diode D1 is electrically connected between the non-inverting input of the comparator IC1 and the source of the MOSFET.

[0017] The IR2110, as the core driver chip, outputs a drive signal through its LO pin, which is connected to the MOSFET gate via resistor R1 to control the MOSFET's turn-on and turn-off. The IR2110 is powered by its VCC pin, which is connected to the power interface and filtered by capacitor C1. The IR2110 uses Zener diode D2 and capacitor C2 to stabilize the circuit potential, ensuring drive stability. Comparator IC1 detects the MOSFET current signal. Resistor R6 is the current sampling resistor; changes in MOSFET current create a voltage drop across R6. The voltage signal sampled by resistor R6 is input to the inverting input of comparator IC1 via resistor R4. The reference voltage is divided by resistors R5 and R3 and then input to the non-inverting input of comparator IC1. Diode D3 transmits the output signal of comparator IC1 to the SD pin (turn-off control) of the IR2110. When a short-circuit signal is detected, the SD pin of the IR2110 is triggered, and the IR2110 stops outputting the drive signal. Diode D1, electrically connected to the MOSFET source, is used for protection circuitry to prevent reverse voltage surges.

[0018] The short-circuit performance test includes short-circuit signal detection, protection action triggering, and test data acquisition. The short-circuit signal detection principle is as follows: Under normal operation, the voltage across resistor R6 due to the MOSFET current drops below the reference voltage at the non-inverting input of comparator IC1, causing IC1 to output a low level. IR2110 drives the MOSFET normally. When a short circuit occurs in the MOSFET, the current increases sharply, and the voltage drop across resistor R6 exceeds the reference voltage, causing comparator IC1 to output a high level. The protection action triggering principle is as follows: The high level output by comparator IC1 is transmitted to the SD pin of IR2110 through diode D3. Upon receiving the signal, IR2110 immediately disables the LO pin output, and the MOSFET quickly turns off to prevent damage from prolonged short circuits. The test data acquisition principle is as follows: By monitoring the output signal of comparator IC1 (short-circuit detection signal), the drive output state of IR2110 (LO pin), and the current and voltage waveforms of the MOSFET, parameters such as the MOSFET's response time and the effectiveness of the protection mechanism during a short circuit can be analyzed to complete the short-circuit performance test.

[0019] This circuit uses the logic of "current sampling - comparison and judgment - drive shutdown" to detect and protect the MOSFET from short circuit, providing support for testing the MOSFET's short circuit tolerance and the response speed of the protection circuit.

[0020] This invention uses comparator IC1 to accurately compare the sampled voltage with the reference voltage, enabling rapid and sensitive detection of abnormal current increases during short circuits. This solves the problem of inaccurate detection in existing technologies and provides reliable data for short-circuit performance testing. When comparator IC1 detects a short circuit and outputs a high level, diode D3 quickly triggers the SD pin of IR2110, immediately disabling the LO pin's drive signal and achieving rapid MOSFET turn-off. This design solves the problem of lagging protection mechanisms, shortening the MOSFET short-circuit duration, protecting the device from damage, and accurately testing its response characteristics under short-circuit conditions. IR2110, combined with Zener diode D2 and capacitor C2, stabilizes the drive circuit potential; capacitor C1 filters the power supply; and diode D1 prevents abnormal voltage surges. These multiple measures ensure stable circuit operation. The optimized circuit structure solves the error problem caused by insufficient stability during testing, ensuring the effectiveness and repeatability of short-circuit performance testing.

[0021] It should be understood that this utility model is not limited to the above-described preferred embodiments. Anyone can derive other forms of products under the guidance of this utility model. However, regardless of any changes made in their shape or structure, any technical solution that is the same as or similar to this application falls within the protection scope of this utility model.

Claims

1. A MOSFET short-circuit performance testing system, characterized in that, The system includes a MOSFET and a control chip, wherein the control chip is an IR2110. The gate of the MOSFET is electrically connected to the LO pin of the IR2110. The system also includes a comparator IC1, wherein the non-inverting input of the comparator IC1 is electrically connected to the source of the MOSFET. The non-inverting input of the comparator IC1 is also electrically connected to a resistor R3. Resistor R3 is electrically connected to resistors R5 and R6. Resistor R5 is electrically connected to the power interface, and resistor R6 is grounded. Resistor R6 is also electrically connected to a resistor R4, which is electrically connected to the inverting input of the comparator IC1. The output of the comparator IC1 is electrically connected to the SD interface of the IR2110 through a diode D3.

2. The MOSFET short-circuit performance testing system according to claim 1, characterized in that, The VCC pin of the IR2110 is electrically connected to the power interface, and the VCC interface of the IR2110 is electrically connected to a capacitor C1, which is grounded.

3. The MOSFET short-circuit performance testing system according to claim 1, characterized in that, The comparator IC1 is electrically connected to the power interface, and the output terminal of the comparator IC1 is electrically connected to a resistor R2, which is also electrically connected to the power interface.

4. The MOSFET short-circuit performance testing system according to claim 1, characterized in that, The COM pin of the IR2110 is electrically connected to the drain of the MOSFET. The COM pin of the IR2110 is also electrically connected to a Zener diode D2 and a capacitor C2. The Zener diode D2 and the capacitor C2 are grounded.

5. The MOSFET short-circuit performance testing system according to claim 1, characterized in that, A diode D1 is electrically connected between the non-inverting input terminal of the comparator IC1 and the source terminal of the MOSFET.

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