High-energy radiation detection device

Abstract

The utility model discloses a high energy radiation detection device, including a scintillator layer, a light color conversion layer and a light detection module, wherein the light color conversion layer is located between the scintillator layer and the light detection module. The scintillator layer is used to receive a high energy radiation, and generates a scintillation light. The color conversion layer is used to receive the scintillation light, and generates a conversion light, wherein the wavelength of the conversion light is greater than the scintillation light. The light detection module is used to receive the conversion light, and converts the conversion light into an electric signal. The high energy radiation detection device disclosed by the utility model converts the high energy radiation into the conversion light with longer wavelength through two-stage mode, which is beneficial to improve the conversion efficiency of the light detection module.

Description

Technical Field

[0001] This utility model relates to a high-energy radiation detection device, which is beneficial to improving the conversion efficiency of the optical detection module of the high-energy radiation detection device. Background Technology

[0002] High-energy radiation mainly includes X-rays, gamma rays (γ rays), alpha particles, and beta particles. X-rays, for example, are currently widely used in medical and industrial imaging examinations.

[0003] Typical high-energy radiation detection devices usually include a scintillator material, which converts high-energy radiation into ultraviolet or visible light after being irradiated.

[0004] Specifically, when high-energy radiation enters a scintillator material, it transfers energy to electrons within the material, causing them to transition from the ground state (low-energy state) to an excited state (high-energy state). These excited electrons are relatively unstable and quickly return to the low-energy state, releasing excess energy as photons (visible or ultraviolet light).

[0005] A photodetector is used to receive light emitted by a scintillator material, convert the received light signal into an electrical signal, and then amplify and analyze it to detect and measure high-energy radiation. Utility Model Content

[0006] To achieve the above objectives, this utility model proposes a high-energy radiation detection device, comprising: a scintillator layer for receiving high-energy radiation and generating scintillating light, wherein the wavelength of the scintillating light is less than 500 nm; a color conversion layer for receiving the scintillating light and generating converted light, wherein the wavelength of the converted light is greater than 500 nm; and a light detection module disposed on a substrate for receiving the energy of the converted light and generating an electrical signal, wherein the scintillator layer, the color conversion layer and the light detection module are stacked, and the color conversion layer is located between the scintillator layer and the light detection module.

[0007] This invention proposes another high-energy radiation detection device, comprising: a light-color conversion scintillator layer, including: a plurality of scintillator powders for receiving high-energy radiation and generating scintillating light, wherein the wavelength of the scintillating light is less than 500 nm; a plurality of light-color conversion powders for receiving conversion light and generating conversion light, wherein the wavelength of the conversion light is greater than 500 nm; and a light detection module disposed on a substrate for receiving the conversion light and converting the conversion light into an electrical signal.

[0008] In at least one embodiment of the high-energy radiation detection device of this utility model, the wavelength of the scintillation light is between 180nm and 480nm, while the wavelength of the conversion light is between 500nm and 900nm.

[0009] In at least one embodiment of the high-energy radiation detection device of this utility model, the scintillation light includes ultraviolet and blue light bands, and the conversion light includes green and infrared light bands.

[0010] In at least one embodiment of the high-energy radiation detection device of this utility model, a reflective layer is disposed on the scintillator layer, such that the scintillator layer is located between the reflective layer and the light color conversion layer.

[0011] In at least one embodiment of the high-energy radiation detection device of this utility model, a light guide layer is located between the scintillator layer and the light color conversion layer.

[0012] In at least one embodiment of the high-energy radiation detection device of this utility model, a light guide layer is located between the light color conversion layer and the light detection module.

[0013] In at least one embodiment of the high-energy radiation detection device of this utility model, the light-color conversion powder is a fluorescent powder or a quantum dot.

[0014] In at least one embodiment of the high-energy radiation detection device of this utility model, a reflective layer is disposed on the light color conversion scintillator layer, such that the light color conversion scintillator layer is located between the reflective layer and the light detection module.

[0015] In at least one embodiment of the high-energy radiation detection device of this utility model, a light guide layer is located between the light color conversion scintillator layer and the light detection module.

[0016] The beneficial effects of this invention are as follows: This invention proposes a novel high-energy radiation detection device, mainly comprising a scintillator layer, a light-color conversion layer, and a light detection module, wherein the light-color conversion layer is located between the scintillator layer and the light detection module. This invention, through the stacked arrangement of the scintillator layer and the light-color conversion layer, converts high-energy radiation into converted light with green and infrared wavelengths in a two-stage manner. It also facilitates the detection of the converted light by the light detection module, thereby improving the efficiency of converting the converted light into an electrical signal.

[0017] This invention proposes a high-energy radiation detection device, mainly comprising a scintillator layer, a color conversion layer, and a light detection module stacked together, wherein the color conversion layer is located between the scintillator layer and the light detection module. The scintillator layer is used to receive high-energy radiation and generate scintillation light, wherein the scintillation light wavelength includes ultraviolet and blue light bands. The color conversion layer is used to receive the scintillation light generated by the scintillator layer and generate converted light, wherein the converted light includes green and infrared light bands.

[0018] This invention proposes a high-energy radiation detection device, in which a light guide layer is disposed between the scintillator layer and the color conversion layer, so that the scintillating light generated by the scintillator layer can be guided to the color conversion layer through the light guide layer. In different embodiments, a light guide layer can be disposed between the color conversion layer and the optical detection module, so that the converted light generated by the color conversion layer can be guided to the optical detection module through the light guide layer, which is beneficial to improving the detection efficiency of the optical detection module.

[0019] The high-energy radiation detection device described in this invention converts high-energy radiation into converted light with green and infrared wavelengths in a two-stage manner. This also facilitates the detection of the converted light by the optical detection module, thereby improving the efficiency of converting the converted light into an electrical signal. Attached Figure Description

[0020] Figure 1 This is a cross-sectional schematic diagram of an embodiment of the high-energy radiation detection device of this utility model.

[0021] Figure 2 This is a cross-sectional schematic diagram of another embodiment of the high-energy radiation detection device of this utility model.

[0022] Figure 3 This is a cross-sectional schematic diagram of another embodiment of the high-energy radiation detection device of this utility model.

[0023] Figure 4 This is a cross-sectional schematic diagram of another embodiment of the high-energy radiation detection device of this utility model.

[0024] Figure 5 This is a cross-sectional schematic diagram of another embodiment of the high-energy radiation detection device of this utility model.

[0025] Explanation of reference numerals in the attached figures:

[0026] 10: High-energy radiation detection device

[0027] 11: Optical Detection Module

[0028] 12: Substrate

[0029] 13: Light and Color Conversion Layer

[0030] 131: Light-color conversion powder

[0031] 15: Scintillator layer

[0032] 151: Scintillator Powder

[0033] 17: Reflective layer

[0034] 19: Light guide layer

[0035] 20: High-energy radiation detection device

[0036] 23: Light-color conversion scintillator layer

[0037] 231: Scintillator Powder

[0038] 233: Light-color conversion powder. Detailed Implementation

[0039] Figure 1 This is a cross-sectional schematic diagram of an embodiment of the high-energy radiation detection device of this utility model. The high-energy radiation detection device 10 of this utility model mainly includes a scintillator layer 15, a light color conversion layer 13, and a light detection module 11. The scintillator layer 15, the light color conversion layer 13, and the light detection module 11 are stacked, wherein the light color conversion layer 13 is located between the scintillator layer 15 and the light detection module 11. In one embodiment of this utility model, the light detection module 11, the light color conversion layer 13, and the scintillator layer 15 can be sequentially disposed on the surface of a substrate 12 in a stacked manner. For example, the substrate 12 can be a flexible substrate, so that the high-energy radiation detection device 10 has flexibility.

[0040] The scintillator layer 15 mainly comprises multiple scintillator powders 151, wherein the scintillator layer 15 is used to absorb high-energy radiation and generate scintillation light. Examples of high-energy radiation include X-rays, gamma rays (γ rays), alpha particles, and beta particles. The wavelength of the scintillation light is less than 500 nm, for example, scintillation light includes the ultraviolet and blue light bands, or wavelengths ranging from 180 nm to 480 nm. Specifically, the material of the scintillator powders 151 includes, but is not limited to, CsI:Tl. + CsI:Na + NaI:Tl + LaBr3:Ce 3+ SrI2:Eu 2+ , BaF2, Cs3Cu2I5, Cs3Cu2I5: M (M=Na, K, Rb, In, Pr), PbWO4, CdWO4, ZnWO4, Gd3Al2Ga3O 12 Ce 3 + Y3Al5O 12 Ce 3+ Lu3Al5O 12 :Pr 3+ (Lu,Y)2SiO5:Ce 3+ Y2SiO5:Ce 3+ ZnS: Ag + Si6-zAlzOzN8-z:Eu ++ (0 <z<0.4)、SrSi2N2O2:Eu 2+ ZnO:Ga 3+, TlBr, TlCl, CsPbBr3, CsPbCl3.

[0041] The light-color conversion layer 13 mainly comprises multiple light-color conversion powders 131, such as phosphors or quantum dots. The light-color conversion layer 13 is used to absorb scintillation light and generate converted light, wherein the wavelength of the converted light is greater than 500 nm and the wavelength of the scintillation light is also greater. For example, the light-color conversion layer 13 can be used to absorb scintillation light in the ultraviolet-blue light band and generate converted light in the green-near-red light band, wherein the wavelength of the converted light is between 500 nm and 900 nm. The material of the light-color conversion powder 131 includes aluminate series yellow powders (MAlO3:Ce). 3+ M = Y, Gd, La), yellow-green powder (Y3Al5O 12 Ce 3+ ), silicate green powder (M2SiO4:Eu) 2+ M = Ba, Sr, Ca), nitride red powder (M2Si5N8: Eu) 2+ M = Ca, Sr, Ba), fluoride red powder (K2SiF6:Mn) 4+ Na2SiF6:Mn 4+ Mg 14 Ge5O 24 F2: Mn 4+ MF2:Mn 4+ Or NaMF6:Mn 4+ M = Mg, Zn, Ca), halophosphate blue (MPO4: Eu) 2+ M = Sr, Ba), nitrogen oxide green powder (Si6-zAlzOzN8-z:Eu) 2+ β-SiAlON), nitrogen oxide green powder (SrSi2O2N2:Eu 2+ ), Nitrogen compound yellow powder (CaAlSiN3:Eu) 2+ ), near-infrared phosphor (YVO4:Nd) 3+ LaPO4:Nd 3+ LiGa5O8:Cr 3+ MAlO3:Nd 3+ / Yb 3+ M = Y, Gd), organic-inorganic mixed perovskite quantum dots (CH3NH3PbX3(MAPbX3), X = Cl-, Br - I-, HC(NH 2)2 PbX3(FAPbX3), X=Cl-、Br - I-, (R-NH3)2PbX4), all-inorganic perovskite quantum dots (CsPbX3, X = Cl-, Br-) -I-, CsSnX3, X = Cl-, Br - I-, CsPb(BrxI1-x)3, CsPb(ClxBr1-x)3), II–VI group quantum dots (CdSe, CdS, CdTe, ZnS, ZnSe, CdSe / ZnS (core-shell structure), CdS / ZnS (core-shell structure), CdTe / CdS, CdSe / CdS / ZnS (multilayer coating)), III–V group quantum dots (InP, InAs, InP / ZnS (core-shell), InP / ZnSe / ZnS (multilayer shell)), IV–VI group quantum dots (PbS, PbSe, SnTe) and other quantum dot materials (AgInS2 / ZnS, CuInS2 / ZnS, CdS:Mn) 2+ ZnS:Mn 2+ , Carbon QDs, Graphene QDs, etc.).

[0042] The photodetector module 11 can be disposed on the substrate 12. The photodetector module 11 is used to absorb the energy of the converted light and generate an electrical signal. For example, the photodetector module 11 may include CMOS, TFT-LCD, etc., and can be used to receive the converted light in the green-near-red light band and generate an electrical signal.

[0043] In general, when detecting high-energy radiation, a single layer of scintillator material is used to convert the radiation into light with wavelengths between 530 nm and 580 nm. However, typical CMOS sensors have high sensitivity to light with wavelengths between 500 nm and 550 nm, which does not perfectly match the wavelength distribution (530 nm to 580 nm) of the light converted by a single layer of scintillator material. This can lead to poor sensing and conversion efficiency in CMOS sensors.

[0044] To address the aforementioned issues, the high-energy radiation detection device 10 of this embodiment converts high-energy radiation into longer-wavelength visible or infrared light in a two-stage process. For example, the high-energy radiation is first converted into scintillating light in the ultraviolet-blue light band via a scintillator layer 15, and then converted into green-near-infrared light via a color conversion layer 13. The light detection module 11 converts the green-near-infrared light into an electrical signal. The green-near-infrared light has a high degree of matching with the sensing band of the light detection module 11, and this improves the efficiency of the light detection module 11 in converting the converted light into an electrical signal.

[0045] In one embodiment of this invention, the high-energy radiation detection device 10 may include a reflective layer 17, which can be used to reflect light to the scintillator layer 15 to improve the sensing efficiency and sensitivity of the high-energy radiation detection device 10. The reflective layer 17 may be disposed on the scintillator layer 15, wherein the scintillator layer 15 is located between the reflective layer 17 and the light color conversion layer 13. The reflective layer 17 is used to reflect the scintillating light or converted light transmitted from the scintillator layer 15 to the reflective layer 17 back to the scintillator layer 15 and / or the light color conversion layer 13 to improve the light intensity transmitted to the light detection module 11. For example, the reflective layer 17 may be an aluminum film, an aluminum-coated PET sheet, an aluminum coating, a silver paste reflective layer, a metal-coated PET, a white reflective coating layer containing TiO2 or Al2O3 particles, etc. In different embodiments, the reflective layer 17 may be disposed on the surfaces of the scintillator layer 15 and the light color conversion layer 13 that are in contact with the outside, or it may cover the entire exterior of the high-energy radiation detection device 10.

[0046] In one embodiment of this utility model, the high-energy radiation detection device 10 may include at least one light guide layer 19. For example... Figure 2 As shown, the light guide layer 19 can be disposed between the scintillator layer 15 and the light color conversion layer 13, and is used to guide the scintillator light emitted by the scintillator layer 15 to the light color conversion layer 13. For example, the light guide layer 19 can be a light guide prism film, a bidirectional light guide prism film, a photonic crystal film, a microlens film, a white high scattering layer, an optical diffusion film, etc.

[0047] In addition, such as Figure 3 As shown, the light guide layer 19 can be disposed between the light color conversion layer 13 and the light detection module 11, which is beneficial for guiding the converted light generated by the light color conversion layer 13 to the light detection module 11. In different embodiments, the high-energy radiation detection device 10 may include two light guide layers 19, one of which can be disposed between the scintillator layer 15 and the light color conversion layer 13, while the other light guide layer 19 can be disposed between the light color conversion layer 13 and the light detection module 11.

[0048] In one embodiment of this utility model, the thickness of the light color conversion layer 13 is approximately 10 micrometers to 30 micrometers, the thickness of the scintillator layer 15 is approximately 40 micrometers to 60 micrometers, and the thickness of the reflective layer 17 is approximately 40 micrometers to 60 micrometers. The thicknesses of the light color conversion layer 13, the scintillator layer 15, and the reflective layer 17 described above are merely one embodiment of this utility model and are not intended to limit the scope of this utility model.

[0049] In production Figures 1 to 3When preparing the high-energy radiation detection device 10, a colloid of the scintillator layer 15 and the light-color conversion layer 13 can be prepared first. In preparing the colloid of scintillator powder 151, CsI and CuI in a molar ratio of 3:2 can be dissolved in dimethyl sulfoxide (DMSO), for example, by stirring at a temperature below 90°C. Then, it is slowly dried and hardened at a low temperature, and the dried and hardened solid is ground into micron-sized powder to form scintillator powder 151, for example, the particle size of scintillator powder 151 is approximately 1 to 3 micrometers.

[0050] The scintillator powder 151 obtained by grinding is mixed with a first colloid and a diluent to form a colloid of scintillator layer 15. The first colloid can be a UV adhesive or silicone, such as PUA or NOA63. The weight percentage of scintillator powder 151 to the first colloid is approximately 1:1.5 (wt%). For example, 150 mg of Cs3Cu2I5 powder can be mixed with 1 ml of the first colloid and 200 μl of ethyl acetate, and the Cs3Cu2I5 powder and colloid can be uniformly dispersed by ultrasonication for about 30 minutes to complete the preparation of the colloid of scintillator layer 15.

[0051] In practical applications, the scintillator layer 15 adhesive can be uniformly coated onto a carrier plate, such as the reflective layer 17, using a scraper or spraying method. The thickness of the scintillator layer 15 adhesive is approximately 30 to 50 micrometers. After coating, the scintillator layer 15 adhesive can be further cured, for example, by irradiating or baking it with UV light. When the scintillator layer 15 includes a UV adhesive, the scintillator layer 15 adhesive can be irradiated with a UV lamp, for example, at a wavelength of approximately 365 nm and an intensity of approximately 10 mW / cm². 2 Up to 20mW / cm 2 Irradiate with a UV lamp for 1 to 3 minutes to harden the colloid of the scintillator layer 15 and complete the setting of the scintillator layer 15.

[0052] The light color conversion powder 131 of the light color conversion layer 13 may include quantum dots or phosphors. When making the light color conversion powder 131 of quantum dots, the quantum dots can be dissolved in toluene solution and then mixed with a second colloid to form the colloid of the light color conversion layer 13. The concentration of the quantum dot adhesive is about 1 wt%, and the second colloid can be a UV adhesive or silicone.

[0053] When preparing the color-conversion powder 131 composed of phosphors, the phosphors can be mixed with a second colloid to form a colloid of the color-conversion layer 13. For example, 100 mg of phosphor (YAG:Ce) can be mixed with 500 μl of UV adhesive (PUA), wherein the particle size of the phosphors is approximately 1 to 3 micrometers. The phosphors and UV adhesive can be ultrasonically dispersed during mixing to form the colloid of the color-conversion layer 13, for example, by ultrasonically dispersing the phosphors and UV adhesive for 15 minutes.

[0054] The colloid of the color conversion layer 13 is then sprayed or coated onto the surface of the scintillator layer 15, and further cured. When the color conversion layer 13 includes a UV adhesive, it can be cured by irradiating the colloid with a UV lamp, wherein the thickness of the color conversion layer 13 is approximately 20 to 30 micrometers. For example, the colloid of the color conversion layer 13 can be coated onto the surface of the scintillator layer 15 using a spin coating method, wherein the rotation speed is approximately 2000 rpm, and irradiated with a UV lamp with a wavelength of 365 nm for 1 to 3 minutes. Finally, the light detection module 11 is disposed on the surface of the color conversion layer 13, for example, by bonding the light detection module 11 and the color conversion layer 13 with optical adhesive to form a... Figure 1 The structure shown.

[0055] In production Figure 2 In the aforementioned construction, after the scintillator layer 15 is installed, the light guide layer 19 is placed on the surface of the scintillator layer 15, for example, by attaching the light guide layer 19 to the scintillator layer 15 with optical adhesive. Then, the colloid of the color conversion layer 13 is sprayed or coated onto the surface of the light guide layer 19 and cured, for example, by irradiating or baking the colloid of the color conversion layer 13 with UV light. Finally, the light detection module 11 is placed on the surface of the color conversion layer 13, for example, by bonding the light detection module 11 and the color conversion layer 13 with optical adhesive to form... Figure 2 The structure shown.

[0056] In production Figure 3 In the aforementioned construction, after the scintillator layer 15 and the light color conversion layer 13 are stacked, the light guide layer 19 is disposed on the surface of the light color conversion layer 13, for example, by attaching the light guide layer 19 to the light color conversion layer 13 with optical adhesive. Finally, the light detection module 11 is disposed on the surface of the light guide layer 19, for example, by bonding the light detection module 11 and the light guide layer 19 together with optical adhesive to form... Figure 3 The structure shown.

[0057] In another embodiment of the high-energy radiation detection device 10, the colloid of the color conversion layer 13 can be sprayed or coated onto the light detection module 11 first, and then cured to form a cured color conversion layer 13 on the light detection module 11, for example, by irradiating or baking the colloid of the color conversion layer 13 with UV light. The colloid of the scintillator layer 15 is then sprayed or coated onto the surface of the color conversion layer 13 and cured, for example, by irradiating or baking the colloid of the scintillator layer 15 with UV light, to form a cured scintillator layer 15 on the color conversion layer 13. Finally, a reflective layer 17 is disposed on the color conversion layer 13, for example, by attaching the reflective layer 17 to the scintillator layer 15 with transparent epoxy resin or optical adhesive to form... Figure 1 The structure shown.

[0058] Before spraying or coating the colloid of the color conversion layer 13 onto the light detection module 11, the surface of the light detection module 11 and / or the substrate 12 can be treated with plasma or oxygen plasma, for example, for about one minute, to improve the adhesion of the light detection module 11 and / or the substrate 12, which is beneficial for setting the colloid of the color conversion layer 13 onto the light detection module 11 and / or the substrate 12.

[0059] In production Figure 2 In the aforementioned construction, after the light color conversion layer 13 is placed on the light detection module 11, a light guide layer 19 is placed on the surface of the light color conversion layer 13, and then a scintillator layer 15 is placed on the light guide layer 19. Finally, a reflective layer 17 is placed on the scintillator layer 15, for example, by attaching the reflective layer 17 to the scintillator layer 15 using transparent epoxy resin or optical adhesive to form... Figure 2 The structure shown.

[0060] In production Figure 3 In the aforementioned construction, the light guide layer 19 can first be placed on the light detection module 11, for example, by bonding the light guide layer 19 and the light detection module 11 together with optical adhesive. The colloid of the color conversion layer 13 is sprayed or coated onto the surface of the light guide layer 19 and cured, for example, by irradiating or baking the colloid of the color conversion layer 13 with UV light. Then, a scintillator layer 15 is placed on the color conversion layer 13. Finally, a reflective layer 17 is placed on the scintillator layer 15, for example, by attaching the reflective layer 17 to the scintillator layer 15 with transparent epoxy resin or optical adhesive to form... Figure 3 The structure shown.

[0061] In actual fabrication, a flexible PI (polyimide) film can be used as the substrate 12, giving the high-energy radiation detection device 10 a bendable characteristic. The thickness of the substrate 12 is approximately 50 micrometers to 125 micrometers, and a photodetector module 11 is disposed on the substrate 12. For example, the photodetector module 11 can be a CMOS / TFT sensing chip array.

[0062] The surfaces of the substrate 12 and / or the light detection module 11 can be cleaned with UV and / or plasma to improve the adhesion of the light color conversion layer 13 or the light guide layer 19 subsequently disposed on the substrate 12 and / or the light detection module 11.

[0063] Figure 4 This is a cross-sectional schematic diagram of another embodiment of the high-energy radiation detection device of this utility model. The high-energy radiation detection device 20 described in this embodiment mainly includes a light color conversion scintillator layer 23 and a light detection module 11, wherein the light color conversion scintillator layer 23 and the light detection module 11 are stacked. In one embodiment of this utility model, the light detection module 11 and the light color conversion scintillator layer 23 can be sequentially stacked on the surface of a substrate 12.

[0064] The light-color conversion scintillator layer 23 includes multiple scintillator powders 231 and multiple light-color conversion powders 233, wherein the material of the scintillator powders 231 includes... Figure 1 The material of the scintillator powder 151 described in the embodiment, and the material of the light color conversion powder 233, include Figure 1 The material of the light-color conversion powder 131 described in the embodiments.

[0065] Scintillator powder 231 is used to receive high-energy radiation and generate scintillating light, wherein the wavelength of the scintillating light is less than 500 nm. For example, the scintillating light may include ultraviolet and blue light bands, or wavelengths ranging from 180 nm to 480 nm. Color-converting powder 233 is used to receive the scintillating light and generate converted light, wherein the wavelength of the converted light is greater than 500 nm. For example, the converted light may include green-near-infrared light bands, or wavelengths ranging from 500 nm to 900 nm. Light detection module 11 is used to receive the energy of the converted light and convert it into an electrical signal. The green-near-infrared light band of the converted light has a higher matching degree with the sensing band of the light detection module 11, which can improve the efficiency of the light detection module 11 in converting the converted light into an electrical signal.

[0066] In one embodiment of this invention, the high-energy radiation detection device 20 may include a reflective layer 17, wherein the reflective layer 17 is disposed on the color-conversion scintillator layer 23, such that the color-conversion scintillator layer 23 is located between the reflective layer 17 and the light detection module 11. The reflective layer 17 is used to reflect the scintillator light or converted light transmitted from the color-conversion scintillator layer 23 to the reflective layer 17 back to the color-conversion scintillator layer 23, thereby increasing the light intensity transmitted to the color-conversion scintillator layer 23 and / or the light detection module 11. In different embodiments, the reflective layer 17 may be disposed on the surface of the color-conversion scintillator layer 23 that is in contact with the outside, or it may cover the entire exterior of the high-energy radiation detection device 20.

[0067] like Figure 5 As shown, the high-energy radiation detection device 20 may include at least one light guide layer 19, wherein the light guide layer 19 is disposed between the light color conversion scintillator layer 23 and the light detection module 11.

[0068] In production Figure 4 and Figure 5 When assembling the high-energy radiation detection device 20, a colloidal form of the color-conversion scintillator layer 23 can be prepared first. First, the scintillator powder 231 is dried in a vacuum environment at 120°C for two hours to remove moisture. For example, the scintillator powder 231 can be Cs3Cu2I5 powder. Then, isopropanol (IPA) is used to remove surface impurities from the color-conversion powder 233. For example, the color-conversion powder 233 can be a phosphor, including β-SiAlon:Eu 2+Then, the dried scintillator powder 231 and the color-converting powder 233 are weighed and mixed, for example, Cs3Cu2I5 powder and β-SiAlon:Eu 2+ The weight ratio of fluorescent powder is approximately 1:2.

[0069] The aforementioned mixed scintillator powder 231 and color-converting powder 233 are added to a colloid and a diluent. The colloid can be a UV adhesive or silica gel, and the diluent can be a mixture of butanone (MEK) and ethyl acetate in equal proportions to form a colloid for the color-converting scintillator layer 23. During mixing, magnetic stirring and ultrasonic vibration for 30 minutes can be used to ensure that the scintillator powder 231 and color-converting powder 233 are uniformly distributed in the colloid and diluent. For example, a mixture of Cs3Cu2I5 powder and β-SiAlon:Eu 2+ The amount of phosphor is approximately 300 mg, the amount of UV curing adhesive is approximately 1 ml, and the amount of diluent is approximately 200 μl.

[0070] The surfaces of the light detection module 11 and / or substrate 12 are treated with plasma or oxygen plasma for approximately one minute to improve adhesion and facilitate the deposition of the colloid of the color-conversion scintillator layer 23 onto the light detection module 11 and / or substrate 12. In practical applications, the colloid of the color-conversion scintillator layer 23 can be applied to the light detection module 11 and / or substrate 12 using a spray coating device or screen printing. For example, the thickness of the colloid of the color-conversion scintillator layer 23 is approximately 40 to 50 micrometers.

[0071] The colloid of the color-conversion scintillator layer 23 is cured, for example by irradiating or baking the colloid of the color-conversion scintillator layer 23 with UV light. For example, the colloid of the color-conversion scintillator layer 23 can be irradiated with a UV lamp with a wavelength of 365nm for one to two minutes, and then the cured color-conversion scintillator layer 23, the photodetector module 11 and the substrate 12 are placed in a vacuum environment to dry in order to remove residual solvent, for example, by placing them in a vacuum chamber at 80°C for one hour.

[0072] Finally, the reflective layer 17 is bonded to the light color conversion scintillator layer 23 with optical adhesive to complete the process. Figure 4 The aforementioned structure.

[0073] In production Figure 5In the aforementioned construction, the light guide layer 19 can first be placed on the light detection module 11, for example, by bonding the light guide layer 19 and the light detection module 11 together with optical adhesive. The adhesive of the color-converting scintillator layer 23 is then applied to the surface of the light guide layer 19 using a spraying device or screen printing, and the adhesive of the color-converting scintillator layer 23 is cured, for example, by irradiating or baking the adhesive of the color-converting scintillator layer 23 with UV light. Finally, a reflective layer 17 is placed on the color-converting scintillator layer 23, for example, by attaching the reflective layer 17 to the color-converting scintillator layer 23 with transparent epoxy resin or optical adhesive to form... Figure 5 The structure shown.

[0074] This invention employs a two-stage process: first, high-energy radiation is converted into scintillation light with ultraviolet and blue light bands; then, the scintillation light is converted into converted light with green and infrared light bands. This facilitates the detection of the converted light by the light detection module 11, thereby improving the efficiency of converting the converted light into an electrical signal.

[0075] The above description is merely a preferred embodiment of the present utility model and is not intended to limit the scope of the present utility model. All equivalent variations and modifications made in accordance with the shape, structure, features and spirit described in the claims of the present utility model should be included in the scope of the claims of the present utility model.

Claims

1. A high-energy radiation detection device, characterized in that, include: A scintillator layer for receiving high-energy radiation and generating scintillation light, wherein the wavelength of the scintillation light is less than 500 nm; A light color conversion layer is used to receive the flashing light and generate a converted light, wherein the wavelength of the converted light is greater than 500nm; A substrate, wherein the substrate is a flexible substrate; and A light detection module is disposed on the substrate to receive the energy of the converted light and generate an electrical signal, wherein the scintillator layer, the light color conversion layer and the light detection module are stacked, and the light color conversion layer is located between the scintillator layer and the light detection module.

2. The high-energy radiation detection device as described in claim 1, characterized in that, The wavelength of the flashing light is between 180 nm and 480 nm, while the wavelength of the converted light is between 500 nm and 900 nm.

3. The high-energy radiation detection device as described in claim 1, characterized in that, The flashing light has wavelengths including ultraviolet and blue light, and the converted light has wavelengths including green and infrared light.

4. The high-energy radiation detection device as described in claim 1, characterized in that, The scintillator layer includes a reflective layer disposed on the scintillator layer, such that the scintillator layer is located between the reflective layer and the color conversion layer.

5. The high-energy radiation detection device as described in claim 4, characterized in that, It includes a light guide layer located between the scintillator layer and the color conversion layer.

6. The high-energy radiation detection device as described in claim 4, characterized in that, It includes a light guide layer located between the light color conversion layer and the light detection module.

7. A high-energy radiation detection device, characterized in that, include: A light-color conversion scintillator layer includes: Multiple scintillator powders are used to receive a high-energy radiation and generate a scintillating light, wherein the wavelength of the scintillating light is less than 500 nm. Multiple light-color conversion powders are used to receive the flashing light and generate a converted light, wherein the wavelength of the converted light is greater than 500 nm; A colloid, which is mixed with a plurality of scintillator powders and a plurality of color-changing powders; A substrate, wherein the substrate is a flexible substrate; and A light detection module is disposed on the substrate to receive the converted light and convert the converted light into an electrical signal.

8. The high-energy radiation detection device as described in claim 7, characterized in that, The wavelength of the flashing light is between 180 nm and 480 nm, while the wavelength of the converted light is between 500 nm and 900 nm.

9. The high-energy radiation detection device as described in claim 7, characterized in that, The flashing light has wavelengths including ultraviolet and blue light, and the converted light has wavelengths including green and infrared light.

10. The high-energy radiation detection device as described in claim 7, characterized in that, The light color conversion scintillator layer is disposed on the light color conversion scintillator layer, such that the light color conversion scintillator layer is located between the reflective layer and the light detection module.

11. The high-energy radiation detection device as described in claim 10, characterized in that, It includes a light guide layer located between the light color conversion scintillator layer and the light detection module.

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