High-efficiency anti-interference double-evaporator crucible device for ion source of ion implanter

CN224609853UActive Publication Date: 2026-08-07HEBEI IMPRON SEMICONDUCTOR CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
HEBEI IMPRON SEMICONDUCTOR CO LTD
Filing Date
2025-09-22
Publication Date
2026-08-07

AI Technical Summary

Technical Problem

其结构、材料和工艺的优劣直接决定了离子束流的稳定性、纯度、强度(束流大小)和寿命(更换频率),最终影响离子注入机的生产效率,但是无法确保离子束稳定性;频繁切换固态掺杂元素导致生产效率低下;除此之外不同的离子源类型需要有不同类型的坩埚适配,为此提供一种离子注入机离子源高效抗干扰双蒸发器坩埚装置

Benefits of technology

[0010]通过三层同轴结构加热丝配合外层接地导体形成的法拉第笼,可有效屏蔽电场干扰,解决了现有装置离子束稳定性不足的问题,为掺杂工艺提供稳定离子源,且设置独立双蒸发器腔室,支持不同温度或气氛工艺同时进行,实现掺杂元素分钟级快速切换,且避免交叉污染,解决了频繁切换固态掺杂剂导致的生产效率低下问题;

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a kind of ion implanter ion source efficient anti-interference double evaporator crucible device, specifically related to evaporator technical field, including base, the base is provided with flow guide pressure-increasing assembly, the flow guide pressure-increasing assembly includes the sealing cylinder being set in the top of base, piston is slidably connected in the inside of sealing cylinder, one end of the piston is embedded with electric heating disc, two evaporators are provided on the electric heating disc.The Faraday cage formed by three-layer coaxial structure heating wire cooperation outer layer ground conductor, can effectively shield electric field interference, solve the problem of insufficient ion beam stability of existing device, provide stable ion source for doping process, and set up independent double evaporator chamber, support different temperature or atmosphere process simultaneously, realize minute level rapid switching of doping element, and avoid cross contamination, solve the problem of low production efficiency caused by frequent switching of solid-state dopant.
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Description

Technical Field

[0001] This utility model relates to the field of evaporator technology, and more specifically, to a high-efficiency anti-interference dual evaporator crucible device for an ion implanter ion source. Background Technology

[0002] Ion implanters for chip manufacturing use ion beams of specific elements and energies to scan silicon wafers and complete the doping process in chip manufacturing. They are now widely used in the manufacture of various types of chips. To achieve ion implantation doping, the dopant ions of specific elements need to be accelerated to energies in the megaelectron volt (MeV) range. The ion source of an ion implanter is a complex system integrating precision mechanics, vacuum technology, high-voltage electrical systems, electromagnetics, plasma physics, and high-temperature materials. It generates plasma through gas discharge and extracts the desired dopant ion beam from it.

[0003] The ion source crucible is one of the "hearts" of an ion implanter. As a specially designed container resistant to high temperatures and corrosion, it directly contains and controls the dopant source material (gaseous or solid). By providing an ionization environment and precise temperature control, it facilitates the collisional ionization of high-energy electrons with the source material, thereby generating the desired doped element plasma. The quality of its structure, materials, and manufacturing process directly determines the stability, purity, intensity (beam size), and lifespan (replacement frequency) of the ion beam, ultimately affecting the production efficiency of the ion implanter. However, ion beam stability cannot be guaranteed; frequent switching of solid dopant elements leads to low production efficiency; furthermore, different ion source types require different types of crucibles for adaptation. Therefore, this paper provides a high-efficiency, anti-interference dual-evaporator crucible device for ion sources in ion implanters. Utility Model Content

[0004] In order to overcome the above-mentioned defects of the prior art, this utility model provides a high-efficiency anti-interference dual evaporator crucible device for ion source of ion implanter, which aims to solve the problems mentioned in the background art.

[0005] This utility model provides the following technical solution: a high-efficiency anti-interference dual evaporator crucible device for an ion implanter ion source, including a base, on which a flow guiding and pressurizing component is provided;

[0006] The flow guiding and pressurizing assembly includes a sealing cylinder disposed on the top of the base, a piston slidably connected inside the sealing cylinder, an electric heating plate embedded at one end of the piston, and two evaporators disposed on the electric heating plate;

[0007] An extension rod is provided at the end of the piston away from the evaporator, and one end of the extension rod passes through the sealing cylinder and extends to the end of the sealing cylinder.

[0008] Optionally, in one possible implementation, a connecting frame is provided at one end of the sealing cylinder, the connecting frame is bolted to the base, the connecting frame is a rectangular frame structure, and a sliding plate is slidably connected to the connecting frame. A mounting groove is provided at the end of the sliding plate near the extension rod, and one end of the extension rod extends into the mounting groove and is rotatably connected to the sliding plate through a pin. A connecting plate is bolted to the end of the sealing cylinder away from the connecting frame, and a nozzle is provided on the connecting plate. An electric push rod is provided at the end of the connecting frame away from the sealing cylinder, and the output end of the electric push rod extends to one end of the sliding plate. A mounting seat mounted on the base is sleeved on the outer side of the sealing cylinder.

[0009] The technical effects and advantages of this utility model are as follows:

[0010] The Faraday cage formed by the three-layer coaxial heating wire and the outer ground conductor can effectively shield electric field interference, solve the problem of insufficient ion beam stability in existing devices, provide a stable ion source for doping processes, and set up independent dual evaporator chambers to support the simultaneous execution of processes at different temperatures or atmospheres, realize the minute-level rapid switching of doping elements, and avoid cross-contamination, thus solving the problem of low production efficiency caused by frequent switching of solid dopants.

[0011] Furthermore, the electric push rod drives the piston to adjust the internal space of the sealing cylinder, which can adapt to the vapor delivery requirements of different ion sources, eliminating the need to configure crucibles separately for different ion sources and reducing equipment adaptation costs. Attached Figure Description

[0012] To more clearly illustrate the technical solutions in this disclosure, the accompanying drawings used in some embodiments will be briefly described below. Obviously, the drawings described below are only drawings of some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams and are not intended to limit the actual size of the product, the actual flow of the method, the actual timing of the signals, etc. involved in the embodiments of this disclosure.

[0013] Figure 1 This is a front view of the overall structure of this utility model.

[0014] Figure 2 This is a top view of the overall structure of this utility model.

[0015] Figure 3 This is a schematic diagram of the piston, extension rod, electric heating plate, evaporator, sealing cylinder and nozzle of this utility model.

[0016] Figure 4 This is a schematic diagram of the base, electric push rod, mounting base, evaporator, and connecting bracket of this utility model.

[0017] The attached diagram is labeled as follows: 1. Base; 2. Sealing cylinder; 3. Piston; 4. Electric heating plate; 5. Evaporator; 6. Extension rod; 7. Connecting frame; 8. Slide plate; 9. Nozzle; 10. Electric push rod; 11. Mounting base. Detailed Implementation

[0018] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0019] This embodiment discloses a high-efficiency, anti-interference dual-evaporator crucible device for ion sources in ion implanters, which aims to solve the problems of poor ion beam stability, frequent switching of solid-state doping elements leading to low production efficiency, and insufficient compatibility of crucibles with different ion sources in the prior art.

[0020] like Figure 1 , Figure 2 As shown, the core load-bearing structure of this device is the base 1, which is integrally molded from high-temperature resistant silicon carbide ceramic material to ensure structural stability and deformation resistance under high-temperature conditions. A mounting base 11 is bolted to the top of the base 1, and a sealing cylinder 2 is nested inside the mounting base 11.

[0021] A connecting frame 7 is provided at one end of the sealing cylinder 2. The connecting frame 7 is a rectangular frame structure. Its inner slide rail is slidably adapted to the sliding plate 8. The sliding plate 8 can slide back and forth along the horizontal direction of the connecting frame 7. A U-shaped mounting groove is provided at one end of the sliding plate 8 near the sealing cylinder 2. The end of the extension rod 6 is rotatably connected to the mounting groove through a stainless steel shaft pin.

[0022] like Figure 3 As shown, the end of the extension rod 6 away from the slide plate 8 is welded and fixed to the piston 3. A fluororubber sealing ring is fitted on the outside of the piston 3, forming a dynamic sealing structure with the inner wall of the sealing cylinder 2 to ensure the vacuum environment inside the sealing cylinder 2. An electric heating plate 4 is embedded and installed at the end of the piston 3 away from the extension rod 6. The electric heating plate 4 uses a nickel-chromium alloy heating element with an aluminum nitride insulation layer on its surface. Two evaporators 5 are symmetrically arranged on the upper surface of the electric heating plate 4. The evaporator 5 is a cylindrical cavity structure made of titanium alloy with an electrolytically polished inner wall. Its bottom is connected to the electric heating plate 4 by a threaded seal, and the connection is sealed with a graphite gasket.

[0023] A connecting plate is bolted to the end of the sealing cylinder 2 away from the connecting frame 7. A nozzle 9 is welded and fixed at the center of the connecting plate. The nozzle 9 adopts a conical flow guide structure, which allows steam to be discharged at a uniform flow rate. An electric push rod 10 is fixed to the end of the connecting frame 7 away from the sealing cylinder 2 via a flange. The output end of the electric push rod 10 is connected to the end of the sliding plate 8 via a coupling. By driving the sliding plate 8, the piston 3 is driven to slide inside the sealing cylinder 2, thereby adjusting the internal space of the sealing cylinder 2.

[0024] Meanwhile, this device employs a three-layer coaxial heating wire structure: an inner nickel-chromium heating wire, a middle alumina insulating layer, and an outer copper conductor layer. The outer conductor is grounded to form a Faraday cage structure, which effectively shields against external electric field interference. The contact area between the evaporator 5 and the heating wire is brazed with surface nickel brazing foil to ensure the high temperature resistance and corrosion resistance of the connection.

[0025] The specific working principle is as follows: First, according to the doping process requirements, solid doping materials such as boron and phosphorus are loaded into two evaporators 5 respectively. The evaporators 5 are fixed to the electric heating plate 4 by threaded connection, ensuring a good seal at the connection. A vacuum system can be installed on the sealing cylinder 2, and a vacuum is drawn into the inside of the sealing cylinder 2 through the interface on the sealing cylinder 2.

[0026] Based on the evaporation temperature requirements of the two doped raw materials, the heating temperature of the electric heating plate 4 corresponding to the area of ​​the evaporator 5 is set by the control system, and the electric heating plate 4 is started for heating. During the heating process, the three-layer coaxial heating wire achieves precise temperature control, while the Faraday cage formed by the outer grounded conductor effectively shields the electric field interference, avoiding any impact on the subsequent plasma formation. After the raw materials are completely evaporated, the resulting neutral atomic vapor remains inside the sealed cylinder 2.

[0027] According to process requirements, the electric push rod 10 is activated, which drives the slide plate 8 to slide along the connecting frame 7. The slide plate 8, through the extension rod 6, drives the piston 3 to move inside the sealing cylinder 2, adjusting the internal volume of the sealing cylinder 2, thereby controlling the steam pressure. Under pressure, the steam is discharged through the nozzle 9 at a stable flow rate and transported to the arc chamber of the ion source.

[0028] Vapor atoms entering the arc chamber are ionized by electron emission from the thermionic cathode or by radio frequency discharge, forming a plasma containing positive ions and electrons. A high-voltage electric field of thousands to tens of thousands of volts is then applied, and ions are extracted from the plasma using extraction electrodes. The plasma is then focused and collimated by an electromagnetic lens to form a stable high-energy ion beam for use in semiconductor doping processes.

[0029] When it is necessary to switch doping elements, there is no need to disassemble the device. Simply turn off the heating area corresponding to the currently working evaporator 5 through the control system and turn on the heating system of the other evaporator 5 to achieve a rapid switching within minutes. Moreover, since the two evaporators 5 have independent chamber structures, cross-contamination between different doping materials is effectively avoided.

[0030] Furthermore, by adjusting the position of the piston 3 via the electric push rod 10, the internal space of the sealing cylinder 2 can be changed to accommodate the vapor delivery requirements of different ion sources, thus improving the compatibility of the device with different ion source models. Throughout the operation, the cooling system controls the temperature of the sealing cylinder 2 and the electric heating plate 4 to maintain the thermal stability of the equipment and ensure continuous and stable process operation.

[0031] The above are merely preferred embodiments of the present utility model and are not intended to limit the present utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model shall be included within the protection scope of the present utility model.

Claims

1. A high-efficiency, anti-interference dual-evaporator crucible device for an ion implanter ion source, comprising a base (1), characterized in that: A flow guiding and pressurizing component is provided on the base (1); The flow guiding and pressurizing assembly includes a sealing cylinder (2) disposed on the top of the base (1), a piston (3) is slidably connected inside the sealing cylinder (2), an electric heating plate (4) is embedded at one end of the piston (3), and two evaporators (5) are disposed on the electric heating plate (4). An extension rod (6) is provided at one end of the piston (3) away from the evaporator (5), and one end of the extension rod (6) passes through the sealing cylinder (2) and extends to the end of the sealing cylinder (2).

2. The high-efficiency anti-interference dual evaporator crucible device for ion source of ion implanter according to claim 1, characterized in that: One end of the sealing cylinder (2) is provided with a connecting frame (7), which is installed on the base (1) by bolts.

3. The high-efficiency anti-interference dual evaporator crucible device for ion source of ion implanter according to claim 2, characterized in that: The connecting frame (7) is a rectangular frame structure, and a sliding plate (8) is slidably connected to the connecting frame (7).

4. The high-efficiency anti-interference dual evaporator crucible device for ion source of ion implanter according to claim 3, characterized in that: The slide plate (8) has an installation groove at one end near the extension rod (6), and one end of the extension rod (6) extends into the installation groove and is rotatably connected to the slide plate (8) via a pivot pin.

5. The high-efficiency anti-interference dual evaporator crucible device for an ion implanter ion source according to claim 1, characterized in that: The sealing cylinder (2) is connected to a connecting plate by bolts at one end away from the connecting frame (7), and a nozzle (9) is provided on the connecting plate.

6. The high-efficiency anti-interference dual evaporator crucible device for an ion implanter ion source according to claim 2, characterized in that: The connecting frame (7) is provided with an electric push rod (10) at one end away from the sealing cylinder (2). The output end of the electric push rod (10) extends to one end of the sliding plate (8). The outer side of the sealing cylinder (2) is fitted with a mounting seat (11) installed on the base (1).