Flow uniformizing device, tube furnace

Abstract

The utility model provides a kind of uniform flow device, tubular furnace, it is related to semiconductor manufacturing technology field, and the processing quality of silicon wafer in crystal boat close to end side can be improved. Uniform flow device is applied to tubular furnace, and tubular furnace includes furnace body and two bearing arms parallelly arranged in furnace body, bearing arm extends along first direction, first direction is parallel with the axis of furnace body, and bearing arm is used to carry at least one crystal boat, crystal boat is used to carry multiple silicon wafers, multiple silicon wafers are arranged along second direction, second direction intersects with first direction, and uniform flow device includes: base, located in the end side of furnace body, and connected with bearing arm;Supporting structure connected with base, located between two bearing arms, and supporting structure extends along second direction;Multiple plate structures are connected with supporting structure and arranged along second direction.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, and in particular to a flow equalization device and a tube furnace. Background Technology

[0002] In the process of manufacturing solar cells, silicon wafers need to be subjected to high-temperature treatment using a tube furnace. Specifically, the silicon wafers are placed in a crystal boat, and at least one crystal boat is supported by a support arm in the tube furnace, after which the silicon wafers are subjected to high-temperature treatment.

[0003] The temperature variation and airflow stability of the thermal field space on the end side of the tubular furnace are relatively large, resulting in poor processing quality of silicon wafers in the crystal boat near the end side. Summary of the Invention

[0004] This invention provides a flow equalization device and a tube furnace to improve the processing quality of silicon wafers in a crystal boat near the end.

[0005] To achieve the above objectives, the present invention adopts the following technical solution:

[0006] In a first aspect, a flow equalization device is provided, which is applied to a tube furnace. The tube furnace includes a furnace body and two parallel support arms arranged inside the furnace body. The support arms extend along a first direction, which is parallel to the axis of the furnace body. The support arms are used to support at least one crystal boat, and the crystal boat is used to support multiple silicon wafers. The multiple silicon wafers are arranged along a second direction, which intersects the first direction. The flow equalization device includes: a base located at the end of the furnace body and connected to the support arms; a support structure connected to the base and located between the two support arms, which extends along the second direction; and multiple plate-like structures connected to the support structure and arranged along the second direction.

[0007] Based on this, since the flow equalization device includes a base located at the end of the furnace body and connected to the support arm; a support structure connected to the base located between the two support arms and extending along the second direction; and multiple plate-like structures connected to the support structure and arranged along the second direction, by arranging the flow equalization device at the end of the furnace body, the flow equalization device can guide the airflow and improve the airflow stability. At the same time, since the flow equalization device is located at the end of the furnace body, it can withstand large temperature changes, reducing the impact of large temperature changes on the silicon wafers in the crystal boat, thereby improving the processing quality of the silicon wafers in the crystal boat near the end.

[0008] In conjunction with the first aspect, in some embodiments of the first aspect, the support structure includes a top plate connected to a base, and a plurality of plate-like structures located below the top plate.

[0009] Thus, since the supporting structure includes a top plate, the top plate can protect the plate-like structure connected to the supporting structure below, thereby improving the safety of the flow equalization device.

[0010] In conjunction with the first aspect, in some embodiments of the first aspect, along the second direction, the top plate is lower than the topmost silicon wafer in the crystal boat, and the distance between the top plate and the topmost silicon wafer in the crystal boat is a preset distance, which is greater than or equal to the height of the interdigitated fingers of the crystal boat transfer device in the second direction.

[0011] In this way, when transferring the crystal boat through the crystal boat transfer device, the influence of the flow equalization device on the crystal boat transfer device can be reduced, and the efficiency of transferring the crystal boat can be improved.

[0012] In conjunction with the first aspect, in some embodiments of the first aspect, the support structure includes a base plate, and a plurality of plate-like structures are located above the base plate.

[0013] Thus, since the supporting structure includes a bottom plate, the bottom plate can protect the plate-like structure connected to the supporting structure above, thereby improving the safety of the flow equalization device.

[0014] In conjunction with the first aspect, in some embodiments of the first aspect, along the second direction, the base plate is lower than the bottommost silicon wafer in the crystal boat, or the base plate is flush with the bottommost silicon wafer in the crystal boat.

[0015] In this way, the working surface of the flow equalization device can cover the silicon wafer at the bottom of the crystal boat in the second direction, thereby improving the performance of the flow equalization device.

[0016] In conjunction with the first aspect, in some embodiments of the first aspect, the support structure includes four support columns distributed circumferentially along the top plate.

[0017] In conjunction with the first aspect, in some embodiments of the first aspect, a plurality of plate-like structures are connected to a support structure, including: along a second direction, each support column is provided with a plurality of support platforms at intervals, and the plate-like structures are connected to the support platforms of each support column.

[0018] In conjunction with the first aspect, in some embodiments of the first aspect, in the second direction, the distance between two adjacent support platforms on the same support column ranges from 1mm to 10mm.

[0019] In conjunction with the first aspect, in some embodiments of the first aspect, the plate structure is a plate-shaped quartz sheet or a plate-shaped silicon wafer.

[0020] In a second aspect, a tube furnace is provided, comprising: a furnace body; two parallel support arms arranged inside the furnace body, the support arms extending along a first direction, the first direction being parallel to the axis of the furnace body, the support arms being used to support at least one crystal boat, the crystal boat being used to support multiple silicon wafers, the multiple silicon wafers being arranged along a second direction, the second direction intersecting the first direction; and a flow equalization device provided in the first aspect and any embodiment thereof, located at the end side of the furnace body and connected to the support arms. Attached Figure Description

[0021] Figure 1 A front view of a flow equalization device provided by this utility model;

[0022] Figure 2 A side view of a flow equalization device provided by this utility model;

[0023] Figure 3 A perspective view of a flow equalization device provided by this utility model.

[0024] Figure label:

[0025] Flow equalization device-10, tube furnace-20, furnace body-201, support arm-202, base-101, support structure-102, plate structure-103, top plate-104, bottom plate-105, first support column-106, second support column-107, third support column-108, fourth support column-109, support platform-110, crystal boat-30. Detailed Implementation

[0026] In the description of this utility model, unless otherwise stated, "a plurality of" means two or more. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of a single item or a plurality of items. For example, at least one of a, b, or c can represent: a, b, c, ab, ac, bc, or abc, where a, b, and c can be single or multiple.

[0027] Furthermore, to facilitate a clear description of the technical solutions of the embodiments of this utility model, the terms "first" and "second" are used in the embodiments of this utility model to distinguish identical or similar items with essentially the same function and effect. Those skilled in the art will understand that the terms "first" and "second" do not limit the quantity or execution order, and the terms "first" and "second" are not necessarily different.

[0028] In this embodiment of the invention, the terms "exemplary" or "for example" are used to indicate that something is being described as an example, illustration, or description. Any embodiment or design described as "exemplary" or "for example" in this embodiment of the invention should not be construed as being more preferred or advantageous than other embodiments or designs. Specifically, the use of terms such as "exemplary" or "for example" is intended to present the relevant concepts in a concrete manner for ease of understanding.

[0029] It is understood that the term "embodiment" used throughout the specification means that a specific feature, structure, or characteristic related to an embodiment is included in at least one embodiment of the present invention. Therefore, the various embodiments throughout the specification do not necessarily refer to the same embodiment. Furthermore, these specific features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. It is understood that in the various embodiments of the present invention, the sequence number of each process does not imply the order of execution; the execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present invention.

[0030] It is understood that in this utility model, "when," "if," and "if" all refer to the corresponding processing that will be carried out under certain objective circumstances, and are not limited to a specific time, nor do they require a judgment action to be performed, nor do they imply any other limitations.

[0031] It is understood that some optional features in the embodiments of this utility model can be implemented independently in certain scenarios without relying on other features, such as the current solution on which they are based, to solve the corresponding technical problems and achieve the corresponding effects. Alternatively, they can be combined with other features as needed in certain scenarios. Correspondingly, the device given in the embodiments of this utility model can also implement these features or functions, which will not be elaborated here.

[0032] In this utility model, unless otherwise specified, the same or similar parts between the various embodiments can be referred to each other. In the various embodiments and implementation methods of this utility model, unless otherwise specified or logically conflicting, the terminology and / or descriptions between different embodiments and between the implementation methods of different embodiments are consistent and can be mutually referenced. The technical features in different embodiments and between the implementation methods of different embodiments can be combined according to their inherent logical relationships to form new embodiments, implementation methods, implementation methods, or implementation approaches. The following embodiments of this utility model do not constitute a limitation on the scope of protection of this utility model.

[0033] A tube furnace is a high-temperature heating device that uses a tubular furnace chamber as its heating space. Its core design revolves around a high-temperature resistant tubular reaction chamber, which is usually made of quartz, ceramic, or metal. The material inside the tube is precisely heated by external heating elements (such as resistance wires, silicon carbide rods, etc.).

[0034] In the process of manufacturing solar cells, silicon wafers need to be subjected to high-temperature treatment using a tube furnace. Specifically, the silicon wafers are placed in a crystal boat, and at least one crystal boat is supported by a support arm in the tube furnace, after which the silicon wafers are subjected to high-temperature treatment.

[0035] The temperature variation and airflow stability of the thermal field space on the end side of the tubular furnace are relatively large, resulting in poor processing quality of silicon wafers in the crystal boat near the end side.

[0036] To solve this problem, this utility model provides a flow equalization device. Figure 1 This is a front view of a flow equalization device provided by this utility model. Figure 2 This is a side view of a flow equalization device provided by this utility model. Figure 3 A perspective view of a flow equalization device provided by this utility model, as shown below. Figure 1 or Figure 2 or Figure 3 As shown, the flow equalization device 10 is applied to the tube furnace 20. The tube furnace 20 includes a furnace body 201 and two parallel support arms 202 arranged inside the furnace body 201. The support arms 202 extend along a first direction, which is parallel to the axis of the furnace body 201. The support arms 202 are used to support at least one crystal boat 30. The crystal boat 30 is used to support multiple silicon wafers. The multiple silicon wafers are arranged along a second direction, which intersects with the first direction.

[0037] The flow equalization device 10 includes a base 101 located at the end of the furnace body 201 and connected to the support arm 202; a support structure 102 connected to the base 101 and located between the two support arms 202, the support structure 102 extending along the second direction; and a plurality of plate-shaped structures 103 connected to the support structure 102 and arranged along the second direction.

[0038] like Figure 2 As shown, along the first direction, the flow equalization device 10 is located between the end side of the tube furnace 20 and the crystal boat 30.

[0039] Based on this, since the flow equalization device 10 includes a base 101 located at the end of the furnace body 201 and connected to the support arm 202; a support structure 102 connected to the base 101 located between the two support arms 202 and extending along the second direction; and multiple plate-shaped structures 103 connected to the support structure 102 and arranged along the second direction, by arranging the flow equalization device 10 at the end of the furnace body 201, the flow equalization device 10 can guide the airflow and improve the airflow stability. At the same time, since the flow equalization device 10 is located at the end of the furnace body 201, it can withstand large temperature changes, reducing the impact of large temperature changes on the silicon wafers in the crystal boat 30, thereby improving the processing quality of the silicon wafers in the crystal boat 30 near the end.

[0040] The first direction can be perpendicular to the second direction, or it can be at an angle of 30° or 60° to the second direction. This invention does not impose any specific limitations on this. Preferably, the first direction is perpendicular to the second direction.

[0041] In some embodiments, the base 101 overlaps the support arm 202, or the base 101 is welded to the support arm 202, or the base 101 is bolted to the support arm 202. Preferably, the base 101 overlaps the support arm 202, which improves the installation flexibility of the flow equalization device 10.

[0042] In some embodiments, the thickness of the plate structure 103 is less than the thickness of the silicon wafer, or the thickness of the plate structure 103 is equal to the thickness of the silicon wafer, or the thickness of the plate structure 103 is greater than the thickness of the silicon wafer. Preferably, the thickness of the plate structure 103 is equal to the thickness of the silicon wafer. In this way, since the thickness of the quartz plate is equal to the thickness of the silicon wafer, the impact of the plate structure 103 on the silicon wafer can be reduced during the high-temperature processing of the silicon wafer and the plate structure 103.

[0043] The plate-like structure 103 is a plate-like quartz sheet, a plate-like silicon wafer, a plate-like metal sheet, or a plate-like ceramic sheet. Preferably, the plate-like structure 103 is a plate-like quartz sheet or a plate-like silicon wafer. In this way, since the properties of the quartz sheet or silicon wafer are similar to those of the silicon wafer, the influence of the plate-like structure 103 on the silicon wafer can be reduced during the high-temperature processing of the silicon wafer and the plate-like structure 103.

[0044] In some embodiments, such as Figure 1 or Figure 2 or Figure 3 As shown, the support structure 102 may include a top plate 104, which is connected to the base 101. Multiple plate-shaped structures 103 are located below the top plate 104. Thus, since the support structure 102 includes the top plate 104, the top plate 104 can protect the plate-shaped structures 103 connected to the support structure 102 below, thereby improving the safety of the flow equalization device 10.

[0045] The base 101 can be designed as an integral part of the top plate 104, that is, the base 101 and the top plate 104 are generated in one process when manufacturing the flow equalization device 10.

[0046] Along the second direction, the top plate 104 may be higher than the topmost silicon wafer in the crystal boat 30, or the top plate 104 may be flush with the topmost silicon wafer in the crystal boat 30, or the top plate 104 may be lower than the topmost silicon wafer in the crystal boat 30. Preferably, the top plate 104 is lower than the topmost silicon wafer in the crystal boat 30, and the distance between the top plate 104 and the topmost silicon wafer in the crystal boat 30 is a preset distance. The preset distance is greater than or equal to the height of the interdigitated fingers of the crystal boat 30 transfer device in the second direction. In this way, when the crystal boat 30 is transferred by the crystal boat 30 transfer device, the influence of the flow equalization device 10 on the crystal boat 30 transfer device can be reduced, and the efficiency of transferring the crystal boat 30 can be improved.

[0047] The crystal boat 30 transfer device is a device used to transfer crystal boats 30. The crystal boat 30 transfer device is equipped with forked fingers. In practical applications, multiple crystal boats 30 are arranged in a boat trailer, which is placed on the support arm 202 of the tube furnace 20. The end of the boat trailer near the end of the tube furnace 20 is equipped with a transfer structure that cooperates with the forked fingers. When transferring crystal boats 30, the forked fingers can hold the transfer structure to transfer the boat trailer along with the crystal boats 30 in the boat trailer.

[0048] For example, the preset distance can be 1cm, 1.5cm or 2cm, and this utility model does not impose any specific limitations on it.

[0049] In some embodiments, such as Figure 1 or Figure 2 or Figure 3 As shown, the support structure 102 includes a base plate 105, and a plurality of plate-like structures 103 are located above the base plate 105. Thus, since the support structure 102 includes a base plate, the base plate 105 can protect the plate-like structures 103 connected to the support structure 102 above, thereby improving the safety of the flow equalization device 10.

[0050] Along the second direction, the base plate 105 can be higher than the bottommost silicon wafer in the crystal boat 30, or the base plate 105 can be flush with the bottommost silicon wafer in the crystal boat 30, or the base plate 105 can be lower than the bottommost silicon wafer in the crystal boat 30. Preferably, the base plate 105 can be flush with the bottommost silicon wafer in the crystal boat 30, or the base plate 105 can be lower than the bottommost silicon wafer in the crystal boat 30. In this way, the working surface of the flow equalization device 10 can cover the bottommost silicon wafer in the crystal boat 30 in the second direction, thereby improving the performance of the flow equalization device 10.

[0051] In some embodiments, such as Figure 1 or Figure 2 or Figure 3 As shown, the support structure 102 includes four support columns, namely the first support column 106, the second support column 107, the third support column 108 and the fourth support column 109. The four support columns are distributed circumferentially along the top plate 104. It can be understood that the four support columns are also distributed circumferentially along the bottom plate 105.

[0052] In some cases, the support structure 102 may not include the top plate 104, in which case the support column can be directly connected to the base 101.

[0053] In the first direction, the width of the support column can be 1cm, 2cm, or 3cm, and this utility model does not impose any specific limitations on this.

[0054] In some embodiments, the first support column 106 and the second support column 107 can be connected together, that is, the first support column 106 and the second support column 107 can be regarded as a support plate, and the third support column 108 and the fourth support column 109 can be connected together, that is, the third support column 108 and the fourth support column 109 can be regarded as a support plate.

[0055] In some embodiments, to realize multiple plate-shaped structures 103 connected to the support structure 102, multiple support platforms 110 are provided at intervals along the second direction for each support column, and the plate-shaped structure 103 is connected to the support platform 110 of each support column.

[0056] In the second direction, the height of the support platform 110 can be in the range of [1mm-2mm]. For example, the height of the support platform 110 can be 1mm, 1.5mm, or 2mm.

[0057] In the second direction, the distance between two adjacent support platforms 110 on the same support column ranges from 1mm to 10mm. For example, the distance between two adjacent support platforms 110 can be 1mm, 1.5mm, 2mm, 5mm, 7mm, 8mm, 9mm, or 10mm.

[0058] In some embodiments, the distance between two adjacent support platforms 110 on the same support pillar is equal to the distance between two adjacent silicon wafers in the crystal boat 30, that is, the distance between two adjacent plate-shaped structures 103 is equal to the distance between two adjacent silicon wafers in the crystal boat 30. Alternatively, the distance between two adjacent support platforms 110 on the same support pillar is greater than the distance between two adjacent silicon wafers in the crystal boat 30, that is, the distance between two adjacent plate-shaped structures 103 is greater than the distance between two adjacent silicon wafers in the crystal boat 30. Or, the distance between two adjacent support platforms 110 on the same support pillar is less than the distance between two adjacent silicon wafers in the crystal boat 30, that is, the distance between two adjacent plate-shaped structures 103 is less than the distance between two adjacent silicon wafers in the crystal boat 30. Preferably, the distance between two adjacent support platforms 110 on the same support pillar is equal to the distance between two adjacent silicon wafers in the crystal boat 30. Thus, since the distance between two adjacent plate-shaped structures 103 is equal to the distance between two adjacent silicon wafers in the crystal boat 30, the influence of the plate-shaped structures 103 on the silicon wafers can be reduced during the high-temperature processing of the silicon wafers and the plate-shaped structures 103.

[0059] This utility model provides a tube furnace 20, which includes: a furnace body 201; two parallel support arms 202 arranged inside the furnace body 201, the support arms 202 extending along a first direction, the first direction being parallel to the axis of the furnace body 201, the support arms 202 being used to support at least one crystal boat 30, the crystal boat 30 being used to support multiple silicon wafers, the multiple silicon wafers being arranged along a second direction, the second direction intersecting the first direction; and a flow equalization device 10 provided in the above specific embodiment, located at the end side of the furnace body 201 and connected to the support arms 202.

[0060] Although the present invention has been described herein in conjunction with various embodiments, those skilled in the art will understand and implement other variations of the disclosed embodiments by reviewing the accompanying drawings, the disclosure, and the appended claims in carrying out the claimed invention. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude a plurality. While different dependent claims may recite certain measures, this does not mean that these measures cannot be combined to produce a good effect.

[0061] Although the present invention has been described in conjunction with specific features and embodiments, it is obvious that various modifications and combinations can be made thereto without departing from the spirit and scope of the present invention. Accordingly, this specification and drawings are merely exemplary descriptions of the present invention as defined by the appended claims, and are considered to cover any and all modifications, variations, combinations, or equivalents within the scope of the present invention. Clearly, those skilled in the art can make various alterations and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if such modifications and modifications of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and modifications.

Claims

1. A flow equalization device, characterized in that, The flow equalization device is applied to a tube furnace, which includes a furnace body and two parallel support arms arranged within the furnace body. The support arms extend along a first direction parallel to the axis of the furnace body. Each support arm supports at least one crystal boat, which in turn supports multiple silicon wafers arranged along a second direction intersecting the first direction. The flow equalization device includes: The base is located at the end of the furnace body and is connected to the support arm; A support structure connected to the base is located between two load-bearing arms, and the support structure extends along a second direction; Multiple plate-like structures are connected to the supporting structure and arranged along the second direction.

2. The flow equalization device according to claim 1, characterized in that, The supporting structure includes a top plate connected to the base, and the plurality of plate-like structures are located below the top plate.

3. The flow equalization device according to claim 2, characterized in that, Along the second direction, the top plate is lower than the topmost silicon wafer in the crystal boat, and the distance between the top plate and the topmost silicon wafer in the crystal boat is a preset distance, which is greater than or equal to the height of the forked fingers of the crystal boat transfer device in the second direction.

4. The flow equalization device according to claim 2, characterized in that, The support structure includes a base plate, and the plurality of plate-like structures are located above the base plate.

5. The flow equalization device according to claim 4, characterized in that, Along the second direction, the base plate is lower than the bottommost silicon wafer in the crystal boat, or the base plate is flush with the bottommost silicon wafer in the crystal boat.

6. The flow equalization device according to any one of claims 2-5, characterized in that, The support structure includes four support columns, which are distributed circumferentially along the top plate.

7. The flow equalization device according to claim 6, characterized in that, The plurality of plate-like structures are connected to the supporting structure, including: Along the second direction, each support column is provided with multiple support platforms at intervals, and the plate-like structure is connected to the support platforms of each support column.

8. The flow equalization device according to claim 7, characterized in that, In the second direction, the distance between two adjacent support platforms on the same support column ranges from 1mm to 10mm.

9. The flow equalization device according to claim 1, characterized in that, The plate-like structure is a plate-like quartz sheet or a plate-like silicon wafer.

10. A tubular furnace, characterized in that, The tubular furnace includes: Furnace body; The furnace body contains two parallel support arms that extend along a first direction parallel to the furnace body's axis. Each support arm supports at least one crystal boat, which in turn supports multiple silicon wafers arranged along a second direction that intersects the first direction. The flow equalization device according to any one of claims 1-9 is located on the end side of the furnace body and connected to the support arm.

Images