Surface-mounted metal package double-sided heat dissipation structure and semiconductor device

Abstract

The application belongs to the technical field of power semiconductor device packaging, and provides a surface-mounted metal packaging double-sided heat dissipation structure and a semiconductor device. The surface-mounted metal packaging double-sided heat dissipation structure comprises a metal substrate with a first surface and a second surface arranged opposite to each other, the first surface is provided with a mounting position for assembling a chip; a first ceramic substrate is arranged on the first surface and covers the chip, the two sides of the first ceramic substrate are aligned with the two sides of the metal substrate, and the first ceramic substrate is connected with a PCB; a second ceramic substrate is arranged on the second surface, and the two sides of the second ceramic substrate are aligned with the two sides of the metal substrate. According to the application, the first ceramic substrate is arranged on the first surface of the metal substrate, and the second ceramic substrate is arranged on the second surface of the metal substrate, so that a double-sided heat dissipation structure is formed, the heat dissipation capacity of the packaging structure is improved, the heat loss of the packaging structure in application is reduced, and the conversion efficiency and environmental applicability of the power semiconductor device are improved.

Description

Technical Field

[0001] This application relates to the field of power semiconductor device packaging technology, and in particular to a surface-mount metal package double-sided heat dissipation structure and semiconductor device. Background Technology

[0002] With the widespread application of power semiconductor devices in aerospace, military and other fields, semiconductor devices are usually required to achieve miniaturization, lightweight and high density to the greatest extent, while also meeting high reliability. Packaging is the process of assembling integrated circuits into the final chip product. Metal packaging is a common high-reliability packaging form in aerospace, military and other industries. Especially for active devices, metal packaging can prevent moisture and other contaminants from entering.

[0003] In related technologies, traditional power semiconductor devices are generally packaged using non-hermetic epoxy resin. This non-hermetic packaging not only limits the heat dissipation capacity of the device, resulting in poor heat dissipation, but also restricts the application environment of the device. Utility Model Content

[0004] In view of the shortcomings of the prior art, the purpose of this application is to provide a surface-mount metal packaged double-sided heat dissipation structure and semiconductor device to solve the problem of poor heat dissipation capability of the packaging method of power semiconductor devices in the prior art.

[0005] To achieve the above and other related objectives, this application provides a surface-mount metal packaged double-sided heat dissipation structure, comprising:

[0006] A metal substrate having a first surface and a second surface disposed opposite to each other, wherein mounting positions for assembling chips are provided on the first surface;

[0007] A first ceramic substrate is disposed on the first surface and covers the chip. The two sides of the first ceramic substrate are aligned with the two sides of the metal substrate. The first ceramic substrate is connected to the PCB board.

[0008] A second ceramic substrate is disposed on the second surface, and the two sides of the second ceramic substrate are aligned with the two sides of the metal substrate.

[0009] Optionally, the chip has a third surface and a fourth surface arranged opposite to each other, the third surface being connected to the first surface, and the fourth surface having a source pad and a gate pad.

[0010] Optionally, there are 11 source pads and 1 gate pad.

[0011] Optionally, the first ceramic substrate has a fifth surface and a sixth surface arranged opposite to each other. The fifth surface has a first protrusion on both sides facing each other. The first protrusion protrudes toward the first surface and is connected to the first surface. The first ceramic substrate has a second protrusion at a position corresponding to the source pad and the gate pad. The second protrusion protrudes from both the fifth surface and the sixth surface. One end of the second protrusion is connected to the source pad and the gate pad, and the other end is connected to the PCB board.

[0012] Optionally, 12 second bosses are provided, and the second bosses correspond to the source pad and the gate pad.

[0013] Optionally, the area on the first surface connected to the first boss is a copper-clad area.

[0014] Optionally, the fourth surface and the second boss, and the second ceramic substrate and the second surface are connected by a connecting material.

[0015] Optionally, the connecting material is conductive adhesive or soft solder.

[0016] Optionally, the first surface and the third surface are connected by welding.

[0017] Based on the same inventive concept, this utility model also provides a semiconductor device, including the surface-mount metal package double-sided heat dissipation structure as described above.

[0018] In the surface-mount metal package double-sided heat dissipation structure provided in this application, a double-sided heat dissipation structure is formed by placing a first ceramic substrate on the first surface of a metal substrate and a second ceramic substrate on the second surface of a metal substrate. After packaging, the top and bottom of the power semiconductor device can dissipate heat through the first and second ceramic substrates, which improves the heat dissipation capacity of the package structure, reduces the heat loss of the package structure during application, and improves the conversion efficiency and environmental applicability of the power semiconductor device. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of a surface-mount metal package double-sided heat dissipation structure according to an embodiment of this application;

[0020] Figure 2 This is a partial structural schematic diagram of a surface-mount metal package double-sided heat dissipation structure according to an embodiment of this application.

[0021] Part Number Explanation

[0022] 1-Metal substrate; 2-Chip; 3-First ceramic substrate; 4-Second ceramic substrate; 5-Second boss; 6-First boss; 7-PCB board; 8-Second surface; 9-First surface; 10-Third surface; 11-Fourth surface; 12-Fifth surface; 13-Sixth surface; 14-Source pad; 15-Gate pad; 16-Copper plating area. Detailed Implementation

[0023] The following specific embodiments illustrate the implementation of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification.

[0024] It should be understood that the structures, proportions, sizes, etc., illustrated in the accompanying drawings are merely for illustrative purposes to aid those skilled in the art and are not intended to limit the scope of this application. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to size, without affecting the effectiveness or purpose of this application, should still fall within the scope of the technical content disclosed herein. Furthermore, the terms such as "front," "back," "left," "right," "middle," and "one" used in this specification are merely for clarity and not intended to limit the scope of this application. Changes or adjustments to their relative relationships, without substantially altering the technical content, should also be considered within the scope of this application.

[0025] It should be noted that traditional power semiconductor devices are generally encapsulated using non-hermetic epoxy resin. This non-hermetic encapsulation not only results in relatively weak mechanical strength and electromagnetic interference resistance, but also limits the heat dissipation capacity of the power semiconductor device, leading to poor heat dissipation after encapsulation and thus restricting the application environment of the device. Furthermore, traditional packaging structures generally use wire bonding to connect the chip to the metal frame and the device to the PCB board. Wire bonding typically uses fine metal wires, such as aluminum wire bonding, and utilizes heat, pressure, and ultrasonic energy to tightly weld the metal wires to the metal frame, achieving electrical interconnection between the chip and the metal frame and information exchange between chips. However, due to the limitations of the wire material itself, such as high resistivity and low yield strength, the wire bonding connection method restricts the current of the power semiconductor device and increases parasitic inductance, which has a certain impact on the performance of the device.

[0026] Please see Figure 1 and Figure 2 This application exemplarily provides a surface-mount metal packaged double-sided heat dissipation structure, including:

[0027] Metal substrate 1 has a first surface 9 and a second surface 8 disposed opposite to each other, and mounting positions for assembling chip 2 are provided on the first surface 9.

[0028] A first ceramic substrate 3 is disposed on a first surface 9 and covers the chip 2. The two sides of the first ceramic substrate 3 are aligned with the two sides of the metal substrate 1. The first ceramic substrate 3 is connected to the PCB board 7.

[0029] The second ceramic substrate 4 is disposed on the second surface 8, and the two sides of the second ceramic substrate 4 are aligned with the two sides of the metal substrate 1.

[0030] In the surface-mount metal package double-sided heat dissipation structure provided in this application, a double-sided heat dissipation structure is formed by placing a first ceramic substrate 3 on the first surface 9 of a metal substrate 1 and placing a second ceramic substrate 4 on the second surface 8 of the metal substrate 1. After packaging, the top and bottom of the power semiconductor device can be cooled through the first ceramic substrate 3 and the second ceramic substrate 4, which improves the heat dissipation capacity of the package structure, reduces the heat loss of the package structure during application, and improves the conversion efficiency and environmental applicability of the power semiconductor device.

[0031] In this embodiment, please refer to Figure 1 and Figure 2 Chip 2 has a third surface 10 and a fourth surface 11 arranged opposite to each other. The third surface 10 is connected to the first surface 9. A drain pad is provided on the third surface 10, and a source pad 14 and a gate pad 15 are provided on the fourth surface 11. Chip 2 is electrically connected to the metal substrate 1 through the drain pad, and chip 2 is electrically connected to the first ceramic substrate 3 through the source pad 14 and the gate pad 15.

[0032] Specifically, there are 11 source pads 14 and 1 gate pad 15.

[0033] In this embodiment, as Figure 1 As shown, the first ceramic substrate 3 has a fifth surface 12 and a sixth surface 13 arranged opposite to each other. The fifth surface 12 has a first protrusion 6 on both sides facing each other. The first protrusion 6 protrudes towards the first surface 9 and is connected to the first surface 9. The first ceramic substrate 3 has a second protrusion 5 at the position corresponding to the source pad 14 and the gate pad 15. The second protrusion 5 protrudes from both the fifth surface 12 and the sixth surface 13. One end of the second protrusion 5 is connected to the source pad 14 and the gate pad 15, and the other end is connected to the PCB board 7. The first ceramic substrate 3 is connected to the metal substrate 1 through the first protrusion 6, and the chip 2 is connected to the PCB board 7 through the second protrusion 5. The chip 2 is connected to the PCB board 7 without the need for wire bonding, which reduces current limitation, effectively reduces parasitic inductance, and improves device performance.

[0034] In detail, there are 12 second protrusions 5. The second protrusions 5 correspond to the source pad 14 and the gate pad 15. The connection between the second protrusions 5 and the source pad 14 and the gate pad 15 is realized to connect the chip 2 and the PCB board 7, which reduces the impact of current limitation in the package structure using wire bonding and reduces parasitic inductance.

[0035] In some implementations, such as Figure 2 As shown, the area on the first surface 9 that is connected to the first boss 6 is a copper-plated area 16, and the first ceramic substrate 3 is connected to the metal substrate 1 by copper plating soldering.

[0036] In this embodiment, the fourth surface 11 and the second protrusion 5, and the second ceramic substrate 4 and the second surface 8 are connected by a connecting material. Specifically, the connecting material is an electronic packaging interconnect material such as conductive adhesive or soft solder, which is not limited here.

[0037] In the above embodiment, the first surface 9 and the third surface 10 are connected by welding, and the chip 2 is connected to the metal substrate 1 by dispensing welding.

[0038] In summary, in the surface-mount metal package double-sided heat dissipation structure provided in this application, by placing the first ceramic substrate 3 on the first surface 9 of the metal substrate 1 and the second ceramic substrate 4 on the second surface 8 of the metal substrate 1, a double-sided heat dissipation structure is formed. After packaging, the top and bottom of the power semiconductor device can be cooled through the first ceramic substrate 3 and the second ceramic substrate 4, which improves the heat dissipation capacity of the package structure, reduces the heat loss of the package structure during application, and improves the conversion efficiency and environmental applicability of the power semiconductor device. At the same time, the surface-mount metal package double-sided heat dissipation structure does not require wire bonding. The chip 2 is directly connected to the PCB board through the first ceramic substrate 3, which reduces the impact of current limitation in the package structure and effectively reduces parasitic inductance.

[0039] In another embodiment, this application also provides a semiconductor device including the surface-mount metal package double-sided heat dissipation structure shown in the above embodiments.

[0040] The above embodiments are merely illustrative of the principles and effects of this application and are not intended to limit this application. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this application. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this application should still be covered by the claims of this application.

Claims

1. A surface-mount metal-encapsulated double-sided heat dissipation structure, characterized in that, include: A metal substrate having a first surface and a second surface disposed opposite to each other, wherein mounting positions for assembling chips are provided on the first surface; A first ceramic substrate is disposed on the first surface and covers the chip. The two sides of the first ceramic substrate are aligned with the two sides of the metal substrate. The first ceramic substrate is connected to the PCB board. A second ceramic substrate is disposed on the second surface, and the two sides of the second ceramic substrate are aligned with the two sides of the metal substrate.

2. The surface-mount metal packaged double-sided heat dissipation structure according to claim 1, characterized in that: The chip has a third surface and a fourth surface arranged opposite to each other. The third surface is connected to the first surface, and the fourth surface is provided with a source pad and a gate pad.

3. The surface-mount metal packaged double-sided heat dissipation structure according to claim 2, characterized in that: The source pads are provided with 11, and the gate pads are provided with 1.

4. The surface-mount metal packaged double-sided heat dissipation structure according to claim 2, characterized in that: The first ceramic substrate has a fifth surface and a sixth surface arranged opposite to each other. A first protrusion is provided on both sides of the fifth surface. The first protrusion protrudes toward the first surface and is connected to the first surface. The first ceramic substrate has a second protrusion at a position corresponding to the source pad and the gate pad. The second protrusion protrudes from both the fifth surface and the sixth surface. One end of the second protrusion is connected to the source pad and the gate pad, and the other end is connected to the PCB board.

5. The surface-mount metal packaged double-sided heat dissipation structure according to claim 4, characterized in that: The second boss is provided with 12 protrusions, and the second boss corresponds to the source pad and the gate pad.

6. The surface-mount metal packaged double-sided heat dissipation structure according to claim 4, characterized in that: The area on the first surface that is connected to the first boss is a copper-clad area.

7. The surface-mount metal packaged double-sided heat dissipation structure according to claim 4, characterized in that: The fourth surface and the second boss, as well as the second ceramic substrate and the second surface, are connected by a connecting material.

8. The surface-mount metal packaged double-sided heat dissipation structure according to claim 7, characterized in that: The connecting material is conductive adhesive or soft solder.

9. The surface-mount metal packaged double-sided heat dissipation structure according to claim 2, characterized in that: The first surface and the third surface are connected by welding.

10. A semiconductor device, characterized in that: Includes a surface-mount metal packaged double-sided heat dissipation structure as described in any one of claims 1-9.

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