A semiconductor processing device and a support assembly for its base

Abstract

A semiconductor processing device and its base support assembly include a central support pillar and at least three edge support pillars. The central support pillar coincides with the central axis of the base, limiting base eccentricity after heating and solving the eccentricity problem caused by the different linear expansion of the support pillar and the base. By reducing the cross-sectional area of ​​the central support pillar, the influence of light refraction and reflection on the thermal radiation optical path of the base is reduced. By reducing the contact area between the support pillar and the base, temperature conduction is reduced, thereby improving temperature uniformity. Each support pillar includes an upper pillar and a lower pillar made of different materials. The light absorption rate of the upper pillar is the same as or similar to that of the base, making the temperature difference between the upper pillar and the base approach zero, ensuring good temperature uniformity of the base. The upper pillar has extremely low thermal conductivity, which can block heat conduction from the upper pillar to the lower pillar, reducing heat loss, ensuring heat balance of the base, and improving the temperature distribution uniformity of the substrate.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment, and in particular to a semiconductor processing device and a support component for its base. Background Technology

[0002] In semiconductor manufacturing processes, thin-film deposition equipment has extremely stringent requirements for substrate surface temperature uniformity. Traditional chemical vapor deposition (CVD) equipment often employs radiation heating technology, utilizing thermal radiation to heat the substrate through a light-transmitting cover. Such equipment typically includes a support mechanism that holds the substrate on a base and drives its rotation to improve process uniformity. However, because the support mechanism and the base are made of different materials, their absorption rates of thermal radiation also differ. The absorption rate of thermal radiation by the base and the substrate is greater than that by the support mechanism, resulting in a higher temperature for the base than for the support mechanism. This creates "cold spots" at the contact points between the support mechanism and the substrate, causing uneven temperature distribution on the base, affecting the deposition uniformity on the substrate, and reducing device yield.

[0003] The statements herein provide only background information relating to this invention and do not necessarily constitute prior art. Utility Model Content

[0004] The purpose of this invention is to provide a support component for a semiconductor processing device and its base, which ensures good temperature uniformity of the base, solves the problem of eccentricity caused by thermal expansion of the base, and greatly reduces the influence of the support component on the base temperature and heating optical path.

[0005] To achieve the above objectives, the present invention provides a support assembly suitable for supporting a base. The support assembly includes a plurality of support columns, the plurality of support columns including a central support column and at least three edge support columns, and the plurality of support columns are all adapted to extend into the lower surface of the base.

[0006] Each of the support columns comprises at least a lower column and an upper column that are connected to each other, wherein the lower column is made of transparent quartz and the upper column is made of black quartz.

[0007] Optionally, the cross-sectional area of ​​the upper column is smaller than that of the lower column, the top of the lower column has a first insertion groove, and the upper column is inserted into the first insertion groove.

[0008] Optionally, the depth of the first insertion slot is greater than or equal to one-third of the height of the upper column.

[0009] Optionally, the cross-sectional area of ​​the upper part of the central support column is smaller than the cross-sectional area of ​​the upper part of the edge support column.

[0010] Optionally, in the vertical direction, the top of the central support column is lower than the top of the edge support column.

[0011] Optionally, the at least three edge support columns are all located on the same circumference with the central support column as the center.

[0012] Optionally, the area of ​​the contact surface between the top of the support column and the base is smaller than the cross-sectional area of ​​the rest of the support column.

[0013] Optionally, the lower part of the edge support column is connected to the lower part of the center support column.

[0014] Optionally, the support column further includes: a top column, which is connected to the top of the upper column, and the top column is made of silicon carbide.

[0015] Optionally, the top of the upper column has a second insertion slot, and the top column is inserted into the second insertion slot.

[0016] Optionally, the cross-sectional area of ​​the top column is smaller than the cross-sectional area of ​​the upper column.

[0017] Optionally, the depth of the second insertion slot is greater than or equal to one-third of the height of the top column.

[0018] This utility model also provides a semiconductor processing apparatus, comprising:

[0019] The chamber frame, the upper cover disposed on the upper side of the chamber frame, and the lower cover disposed on the lower side of the chamber frame, together forming a processing space, and both the upper cover and the lower cover are permeable to heat radiation;

[0020] A base is disposed within the processing space, and the upper surface of the base is used to support the substrate;

[0021] The support component as described in any of the preceding embodiments is adapted to extend into and support the lower surface of the base;

[0022] A drive mechanism, connected to the support assembly, is used to drive the support assembly to rotate the base;

[0023] Radiation sources are respectively disposed on the upper side of the upper cover and the lower side of the lower cover, and are used to emit thermal radiation to heat the substrate.

[0024] Optionally, the lower surface of the base has a plurality of connecting grooves; the connecting grooves include a central connecting groove and at least three edge connecting grooves; the central connecting groove is located at the center point of the base and is used to accommodate the top of the central support column; the edge connecting grooves are used to accommodate the top of the edge support column.

[0025] Optionally, the cross-sectional area of ​​the central connecting groove is smaller than the cross-sectional area of ​​the edge connecting groove.

[0026] Optionally, the top of the central support column does not contact the central connecting groove.

[0027] Optionally, the at least three edge connecting slots are all located on the same circumference with the central connecting slot as the center.

[0028] Optionally, the base is made of silicon carbide.

[0029] Optionally, the lower column of the central support column in the support assembly is connected to the drive mechanism.

[0030] This utility model has at least the following beneficial effects:

[0031] This invention, by setting a central support column, ensures that the central support column coincides with the central axis of the base, thus limiting the possibility of the base detaching from the central axis after heating, achieving the purpose of central stability, and solving the problem of eccentricity caused by the different linear expansion of the support column and the base.

[0032] This invention reduces the cross-sectional area of ​​the central support column, making it smaller than that of the edge support columns. This reduces the impact of light refraction and reflection on the light path of the base's absorption of thermal radiation, thereby reducing radiation distortion in the central region of the base, improving the temperature uniformity of the base, and enhancing the process effect.

[0033] This invention reduces the contact area between the support column and the base, thereby reducing the temperature conduction from the base to the support column and improving the temperature uniformity of the base.

[0034] This invention utilizes segmented support columns. The upper column (upper column or top column) directly contacts the base, while the lower column (lower support column) connects to the drive mechanism. The upper column is made of a material with the same (silicon carbide) or similar (black quartz) infrared absorption rate as the base, ensuring that the temperature of the upper column is the same as or similar to the base temperature during radiant heating. This minimizes or even eliminates the temperature difference between the upper column and the base, significantly reducing or eliminating "cold spots" and ensuring excellent temperature uniformity of the base. The upper column has extremely low thermal conductivity, preventing heat transfer from the upper column to the lower column, reducing heat loss, ensuring balanced heat distribution in the base, improving the temperature distribution uniformity of the substrate, and increasing product yield. The lower column is made of transparent quartz, which has high light transmittance, allowing energy from the radiation source to be efficiently transferred to the base, avoiding energy loss in the support column, and improving heating uniformity. This invention uses segmented columns of different materials to assemble a support component, which can better control the overall cost of the support column while ensuring the uniformity of the base temperature. Attached Figure Description

[0035] Figure 1 This is a schematic diagram of the structure of a semiconductor processing device in the prior art.

[0036] Figure 2 This is a schematic diagram of a support component of a centerless support structure in the prior art.

[0037] Figure 3 This is a schematic diagram of a support component with a central support structure in the prior art.

[0038] Figure 4 This is a schematic diagram of the light path refracted and reflected by the quartz support column.

[0039] Figure 5 This is a schematic diagram of the structure of a semiconductor processing device and its supporting components provided in one embodiment of the present invention.

[0040] Figure 6 yes Figure 5 A cross-sectional side view of the central support component.

[0041] Figure 7 This is a cross-sectional view of the top structure of the supporting column.

[0042] Figure 8 This is a schematic diagram of the cross-section of the cross-shaped structure.

[0043] Figure 9 This is a schematic diagram of the structure of the support component provided in another embodiment of the present invention. Detailed Implementation

[0044] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, provides a more detailed account of a semiconductor processing device and its base support assembly according to this utility model. The advantages and features of this utility model will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, intended only to facilitate and clarify the explanation of the embodiments of this utility model. Please refer to the drawings to make the objectives, features, and advantages of this utility model more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation conditions of this utility model. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by this utility model, should still fall within the scope of the technical content disclosed in this utility model.

[0045] like Figure 1 As shown, a semiconductor processing apparatus is provided in the prior art, comprising a chamber frame 1, an upper cover 2 disposed on the upper side of the chamber frame 1, and a lower cover 3 disposed on the lower side of the chamber frame 1. The chamber frame 1, the upper cover 2, and the lower cover 3 together form a processing space 4, and both the upper cover 2 and the lower cover 3 are permeable to thermal radiation. A base 5 is disposed within the processing space 4, and a substrate W is supported on the upper surface of the base 5, with the surface of the substrate W to be processed facing the upper cover 2. A support assembly 6 is disposed below the base 5, with the upper part of the support assembly 6 extending into the lower surface of the base 5 to support the base 5 and the substrate W disposed on the base 5. The lower part of the support assembly 6 is connected to a drive mechanism (not shown in the figure), and the drive mechanism outputs driving force to drive the support assembly 6 to rotate the base 5. Multiple radiation sources 7 are respectively disposed on the upper side of the upper cover 2 and the lower side of the lower cover 3 to emit thermal radiation to heat the substrate W located in the processing space 4.

[0046] In semiconductor radiation heating equipment, a silicon carbide base 5 is typically used as the carrier for the substrate W. Silicon carbide is considered a highly efficient "blackbody-like material" due to its dark appearance, high light absorption, high thermal emissivity, and high-temperature stability. Transparent quartz, with its high thermal radiation transmittance, high temperature resistance, good chemical stability, transparency, and low coefficient of thermal expansion, is an ideal material for fabricating the support component 6. The radiation source 7 is usually placed outside the processing space 4 of the process chamber to provide non-contact heating to the substrate W placed on the base 5, thus avoiding contamination during the process. The radiation source 7 is typically a short-wave infrared heater, radiating infrared light to the base 5 and substrate W through the upper cover 2 and lower cover 3 for heating. The upper cover 2 and lower cover 3 are typically made of quartz glass, which allows most of the short-wave infrared radiation to pass through, providing the main energy to the base 5 and substrate W, which have a high absorptivity, to achieve heating of the substrate W.

[0047] like Figure 2As shown, the support assembly 6 typically includes multiple support pillars 61. These transparent quartz support pillars 61 extend into the lower surface of the base 5, and are evenly distributed circumferentially along the base 5 to share the torque generated during base 5 rotation. During radiant heating, the different materials of the base 5 and support pillars 61 result in different heat absorption rates, leading to a significant temperature difference between them. This causes the horizontal expansion a of the silicon carbide base 5 to be greater than the horizontal expansion b of the quartz support pillars 61. The increased expansion gap between the base 5 and the support pillars 61 causes the center point of the base 5 to shift, leading to a chain reaction of uneven heating, reduced process stability, mechanical damage, substrate thermal stress defects, and control failures. Ultimately, this results in decreased semiconductor processing yield and increased equipment maintenance costs.

[0048] like Figure 3 As shown, the problem of center point offset of base 5 is solved by setting a central support column 62. The central support column 62 extends into the center point of the lower surface of base 5, which can effectively prevent the base 5 from shifting position. However, according to Fresnel's theorem, as Figure 4 As shown, the transparent quartz structure has a higher refractive index than a vacuum or atmospheric environment, which causes light to refract and reflect. This results in most of the light that should have been illuminating the contact area between the central support column 62 and the base 5 being reflected by the inner and outer surfaces of the central support column 62. This causes distortion of the radiation near the central support column 62, resulting in uneven distribution of radiation energy on the base 5. Consequently, this leads to uneven temperature distribution on the base 5, affecting the process effect.

[0049] Regardless of whether a support component without a central support structure or a support component with a central support structure is used, due to the different materials of the support component 6 and the base 5, most of the infrared light cannot be absorbed by the quartz support component 6 during the infrared radiation heating process, but it is easily absorbed by the silicon carbide base 5. As a result, the temperature of the base 5 is higher than that of the support component 6 during the heating process. Because the temperature of the support component 6 is lower, a "cold spot" will be generated at the contact point between the support component 6 and the base 5. The temperature of the base 5 will be transferred from the "cold spot" to the support component 6, causing heat loss from the base 5. This heat conduction phenomenon caused by the temperature difference leads to local temperature differences in the base 5 and uneven overall temperature distribution, which affects the process effect.

[0050] Based on this, the present invention provides a semiconductor processing apparatus, comprising a chamber frame 1, an upper cover 2 disposed on the upper side of the chamber frame 1, and a lower cover 3 disposed on the lower side of the chamber frame 1. The chamber frame 1, the upper cover 2, and the lower cover 3 together form a processing space 4, and both the upper cover 2 and the lower cover 3 are permeable to thermal radiation. A base 5 is disposed within the processing space 4, and a substrate W is supported on the upper surface of the base 5, with the surface of the substrate W to be processed facing the upper cover 2. A support assembly 6 is disposed below the base 5, with the upper part of the support assembly 6 extending into the lower surface of the base 5 to support the base 5 and the substrate W disposed on the base 5. The lower part of the support assembly 6 is connected to a drive mechanism (not shown in the figure), and the drive mechanism outputs driving force to drive the support assembly 6 to rotate the base 5. Multiple radiation sources 7 are respectively disposed on the upper side of the upper cover 2 and the lower side of the lower cover 3 to emit thermal radiation to heat the substrate W located in the processing space 4. Figure 5 and Figure 6As shown, the support assembly 6 includes multiple support columns 601. Correspondingly, multiple connecting grooves 501 are provided on the lower surface of the base 5. Each support column 601 extends into each connecting groove 501, achieving reliable support for the base 5. One of the connecting grooves 501 is located at the center point of the lower surface of the base 5, serving as the central connecting groove 502. Correspondingly, one support column 601 extends into the central connecting groove 502, serving as the central support column 602. The central connecting groove 502 accommodates the top of the central support column 602. The central support column 602 coincides with the central axis of the base 5, limiting the possibility of the base 5 detaching from the central axis after heating, achieving the purpose of central stability, and solving the eccentricity problem caused by the different linear expansion of the support column 601 and the base 5. The remaining connecting grooves 501 are located around the central connecting groove 502, serving as edge connecting grooves 503. Correspondingly, the remaining support pillars 601 extend into the edge connecting grooves 503, serving as edge support pillars 603. The edge connecting grooves 503 accommodate the tops of the edge support pillars 603. At least three edge support pillars 603 and at least three edge connecting grooves 503 are provided to form a stable support structure, ensuring balanced force distribution on the support pillars and maintaining stability of the base 5 during rotation, thus extending the device's lifespan. In some embodiments, at least three edge connecting grooves 503 are located on the same circumference centered on the central connecting groove 502. Therefore, at least three edge support pillars 603 are also located on the same circumference centered on the central support pillar 602, ensuring uniform force distribution, improving the stability of the base, and avoiding tilting or stress concentration caused by uneven distribution of support points. This layout also optimizes thermal uniformity and reduces temperature differences caused by localized shading. Meanwhile, the concentric circular arrangement simplifies the structural design, reduces the risk of offset of the support columns during rotation or lifting, and improves equipment reliability and process repeatability. Furthermore, one end of the edge support column 603 extends into the edge connecting groove 503, and the other end of the edge support column 603 can extend and connect to the central support column 602. One end of the central support column 602 extends into the central connecting groove 502, and the other end of the central support column 602 extends and connects to the drive mechanism (not shown in the figure). This improves overall stability during rotation, avoids off-center loading, effectively transmits driving force through the central support column 602, simplifies drive complexity, and improves control accuracy and synchronization.

[0051] like Figure 6 As shown, the cross-sectional area of ​​the central support column 602 is smaller than that of the edge support column 603. Correspondingly, the cross-sectional area of ​​the central connecting groove 502 is also smaller than that of the edge connecting groove 503 to reduce the assembly gap and allow for a better fit between the connecting groove and the support column. Reducing the cross-sectional area of ​​the central support column 602 can reduce the impact of light refraction and reflection on the heat radiation absorption path of the base 5, thereby reducing the radiation distortion in the central region of the base 5, improving the temperature uniformity of the base 5, and enhancing the process effect.

[0052] like Figure 6 As shown, the depth of the central connecting groove 502 is the same as the depth of the edge connecting groove 503. In the vertical direction, the top of the central support column 602 is lower than the top of the edge support column 603. Therefore, the top of the central support column 602 does not contact the central connecting groove 502, thereby reducing the contact area between the central support column 602 and the base 5, thus reducing the temperature conduction from the base 5 to the central support column 602 and improving the temperature uniformity of the base 5.

[0053] The contact area between the top of the support column 601 and the base 5 is smaller than the cross-sectional area of ​​the rest of the support column 601, such as... Figure 7 As shown, the top of the support column 601 can be configured as a conical top structure 6011, or a spherical top structure 6012, or a cross-shaped structure 6013 (cross-section as shown). Figure 8 As shown, the support column 601 is inserted into the top of the connecting groove 501 in various irregular shapes to minimize the contact area between the support column 601 and the base 5, thereby reducing the temperature conduction from the base 5 to the support column 601 and improving the temperature uniformity of the base 5.

[0054] like Figure 5 and Figure 6As shown, in one embodiment of this utility model, each support column 601 includes a lower column 601-1 and an upper column 601-2 connected to each other. The lower column 601-1 is made of transparent quartz, and the upper column 601-2 extends into the connecting groove 501 on the lower surface of the base 5. The upper column 601-2 is made of black quartz. Specifically, carbon-doped black quartz can be used. Carbon-doped black quartz has a high infrared absorption rate similar to quartz. By using carbon-doped black quartz to make the upper column 601-2, when the radiation source 7 heats the substrate W with infrared radiation, the absorption rates of the upper column 601-2 and the base 5 are almost the same. Therefore, the temperatures of the upper column 601-2 and the base 5 are similar, reducing the temperature difference between the upper column 601-2 and the base 5 and reducing the "cold spot" between the upper column 601-2 and the base 5. Carbon-doped black quartz material also possesses high thermal resistance comparable to quartz, exhibiting extremely low thermal conductivity. It provides excellent physical barrier properties against heat conduction, preventing heat transfer from the upper column 601-2 to the lower column 601-1, reducing heat loss, ensuring thermal uniformity of the base 5, improving the temperature distribution uniformity of the substrate W, and increasing product yield. Only the upper column 601-2 of the support column 601 uses carbon-doped black quartz material, while the lower column 601-1 remains made of transparent quartz. The cost of transparent quartz is lower than that of carbon-doped black quartz, allowing for better control of the overall cost of the support column 601 while ensuring temperature uniformity of the base 5. Furthermore, transparent quartz has high light transmittance to infrared and specific wavelengths of radiation, enabling efficient energy transfer from the radiation source 7 to the base 5, avoiding energy loss in the support column 601, thus improving heating uniformity. Transparent quartz also possesses excellent chemical stability, making it less likely to react with process gases or release impurities, preventing contamination of the process chamber environment.

[0055] In other embodiments, black quartz can also be composite colored quartz, such as black quartz glass containing carbon or silicon carbide, black quartz doped with metal oxides (such as Nb2O5, TiO2, Cr2O3, etc.), composite quartz materials containing dispersed particles or elemental silicon regions, and non-transparent colored quartz glass formed by reducing atmosphere treatment or special sintering, etc. This application does not limit the specific types thereof.

[0056] like Figure 5 and Figure 6As shown, the cross-sectional area of ​​the upper column 601-2 is smaller than that of the lower column 601-1. The upper column 601-2 is made of black quartz material. Black quartz material has high strength, which allows the cross-section of the upper column 601-2 to be smaller than that of the lower column 601-1, while maintaining the same strength. This ensures that each support column 601 minimizes its contact area with the base 5 while ensuring support strength, thereby further reducing heat conduction and improving the temperature uniformity of the base 5. The top of the lower column 601-1 has a first insertion groove 604, and the upper column 601-2 is inserted into the first insertion groove 604. The depth of the first insertion groove 604 is greater than or equal to one-third of the height of the upper column 601-2, so that the upper column 601-2 and the lower column 601-1 are firmly connected, preventing the upper column 601-2 from shifting or falling off, ensuring that the overall strength of the support column 601 is sufficient to support the base 5, and preventing the base 5 from shifting position.

[0057] like Figure 9 As shown, in another embodiment of this utility model, in such a way... Figure 5 and Figure 6 Based on the illustrated embodiment, the support column 601, in addition to comprising the interconnected lower column 601-1 and upper column 601-2, further includes a top column 601-3, which is connected to the top of the upper column 601-2. The top column 601-3 is made of silicon carbide. Silicon carbide has a high light absorption rate. By using silicon carbide to fabricate the top column 601-3, when the radiation source 7 performs infrared radiation heating on the substrate W, since the top column 601-3 and the base 5 are made of the same material, their absorption rates of infrared radiation are exactly the same, and their temperatures are completely identical. No "cold spots" will form at the contact surface between the top column 601-3 and the base 5, ensuring good temperature uniformity for the base 5. Silicon carbide also has high wear resistance, which can significantly reduce friction loss, extend service life, and improve process cleanliness. The upper pillar 601-2, made of black quartz, is located between the top pillar 601-3 made of silicon carbide and the lower pillar 601-1 made of transparent quartz. It blocks heat conduction from the top pillar 601-3 to the lower pillar 601-1, reducing heat loss, ensuring balanced heat distribution in the base 5, improving the temperature uniformity of the substrate W, and increasing product yield. In this embodiment, the amount of black quartz used is further reduced, which can further lower costs.

[0058] In some preferred embodiments, the cross-sectional area of ​​the top column 601-3 is smaller than that of the upper column 601-2. The top column 601-3 is made of silicon carbide, which has high hardness. This allows the cross-section of the top column 601-3 to be smaller than that of the upper column 601-2, while maintaining the same strength. This ensures that each support column 601 minimizes its contact area with the base 5 while maintaining its support strength, thereby further reducing heat conduction and improving the temperature uniformity of the base 5. In this embodiment, the installation method of the top column 601-3 is similar to that of the upper column 601-2. The top of the upper column 601-2 has a second insertion groove 605. The top column 601-3 is inserted into the second insertion groove 605. The depth of the second insertion groove 605 is greater than or equal to one-third of the height of the top column 601-3, so that the top column 601-3 and the upper column 601-2 are stably connected, preventing the top column 601-3 from shifting or falling off, ensuring that the overall strength of the support column 601 is sufficient to support the base 5, and preventing the base 5 from shifting position.

[0059] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0060] In the description of this utility model, it should be understood that the terms "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," and "circumferential," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. In the description of this utility model, unless otherwise stated, "a plurality of" means two or more.

[0061] In the description of this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0062] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0063] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above content. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A support assembly, characterized by, Suitable for supporting a base, the support assembly includes: a plurality of support columns, the plurality of support columns including a central support column and at least three edge support columns, the plurality of support columns being adapted to extend into the lower surface of the base; Each of the support columns comprises at least a lower column and an upper column that are connected to each other, wherein the lower column is made of transparent quartz and the upper column is made of black quartz.

2. The support assembly of claim 1, wherein, The cross-sectional area of ​​the upper column is smaller than that of the lower column, and the top of the lower column has a first insertion groove, into which the upper column is inserted.

3. The support assembly of claim 2, wherein, The depth of the first insertion slot is greater than or equal to one-third of the height of the upper column.

4. The support assembly of claim 1, wherein, The cross-sectional area of ​​the upper part of the central support column is smaller than the cross-sectional area of ​​the upper part of the edge support column.

5. The support assembly of claim 1, wherein, In the vertical direction, the top of the central support column is lower than the top of the edge support column.

6. The support assembly of claim 1, wherein, The at least three edge support columns are all located on the same circumference with the central support column as the center.

7. The support assembly of claim 1, wherein, The area of ​​the contact surface between the top of the support column and the base is smaller than the cross-sectional area of ​​the rest of the support column.

8. The support assembly of claim 1, wherein, The lower part of the edge support column is connected to the lower part of the center support column.

9. Support assembly according to any of claims 1-8, characterized in that The support column further includes a top column, which is connected to the top of the upper column, and the top column is made of silicon carbide.

10. The support assembly of claim 9, wherein, The top of the upper column has a second insertion slot, and the top column is inserted into the second insertion slot.

11. The support assembly of claim 10, wherein, The cross-sectional area of ​​the top column is smaller than that of the upper column.

12. The support assembly of claim 10, wherein, The depth of the second insertion slot is greater than or equal to one-third of the height of the top column.

13. A semiconductor processing apparatus, characterized by comprising: Include: The chamber frame, the upper cover disposed on the upper side of the chamber frame, and the lower cover disposed on the lower side of the chamber frame, together forming a processing space, and both the upper cover and the lower cover are permeable to heat radiation; A base is disposed within the processing space, and the upper surface of the base is used to support the substrate; The support component as described in any one of claims 1 to 12 is adapted to extend into and support the lower surface of the base; A drive mechanism, connected to the support assembly, is used to drive the support assembly to rotate the base; Radiation sources are respectively disposed on the upper side of the upper cover and the lower side of the lower cover, and are used to emit thermal radiation to heat the substrate.

14. The semiconductor processing apparatus of claim 13, wherein, The lower surface of the base has multiple connecting grooves; The connecting groove includes a central connecting groove and at least three edge connecting grooves; The central connecting groove is located at the center point of the base and is used to accommodate the top of the central support column; The edge connecting groove is used to accommodate the top of the edge support column.

15. The semiconductor processing apparatus of claim 14, wherein, The cross-sectional area of ​​the central connecting groove is smaller than the cross-sectional area of ​​the edge connecting groove.

16. The semiconductor processing apparatus of claim 14, wherein, The top of the central support column does not contact the central connecting groove.

17. The semiconductor processing apparatus of claim 14, wherein, The at least three edge connecting slots are all located on the same circumference with the central connecting slot as the center.

18. The semiconductor processing apparatus of claim 13, wherein, The base is made of silicon carbide.

19. The semiconductor processing apparatus of claim 13, wherein, The lower column of the central support column in the support assembly is connected to the drive mechanism.

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