Reaction chamber and epitaxial growth apparatus for epitaxial growth

Abstract

This invention provides a reaction chamber and epitaxial growth apparatus for epitaxial growth. The reaction chamber includes a lower half-moon heater, an intermediate heater, and an upper half-moon heater. A first reaction space is formed between the lower half-moon heater and the intermediate heater, and a second reaction space is formed between the upper half-moon heater and the intermediate heater. The lower half-moon heater has a first carrier rotating assembly for supporting the substrate on the side facing the first reaction space, and a first air flotation channel for suspending and rotating the first carrier rotating assembly is provided inside the lower half-moon heater. The intermediate heater has a second carrier rotating assembly for supporting the substrate on the side facing the second reaction space, and a second air flotation channel for suspending and rotating the second carrier rotating assembly is provided inside the intermediate heater. Two hollow channels are located on both sides of the first air flotation channel inside the intermediate heater. This invention optimizes the temperature uniformity of the reaction chamber and ensures the quality of the epitaxial layer.

Description

Technical Field

[0001] This utility model belongs to the field of epitaxial growth technology, and more specifically, it relates to a reaction chamber and epitaxial growth equipment for epitaxial growth. Background Technology

[0002] Silicon carbide epitaxial growth refers to the growth of a single-crystal layer on a silicon carbide substrate that meets specific requirements and is aligned with the substrate's crystal orientation. The most commonly used epitaxial layer growth method is chemical vapor deposition (CVD), which involves heating the substrate within a reaction chamber and introducing a silicon-containing reactive gas. Silicon atoms generated by the reduction or thermal decomposition of the silicon reactive gas undergo epitaxial growth on the silicon surface of the substrate. In this process, the uniformity of the deposited film is affected by the temperature uniformity of the reaction chamber. Furthermore, to increase yield, multiple epitaxial layers need to be generated simultaneously within the reaction chamber, further increasing the requirements for temperature uniformity within the reaction chamber. Utility Model Content

[0003] The purpose of this invention is to provide a reaction chamber and epitaxial growth equipment for epitaxial growth, which aims to improve the temperature uniformity of the reaction chamber, thereby increasing the yield while ensuring that the epitaxial layer has excellent and stable quality.

[0004] To achieve the above objectives, the technical solution adopted by this utility model is as follows:

[0005] This utility model provides a reaction chamber for epitaxial growth, including a lower half-moon heater, an intermediate heater and an upper half-moon heater arranged sequentially in a vertical direction. A first reaction space is formed between the lower half-moon heater and the intermediate heater, and a second reaction space is formed between the upper half-moon heater and the intermediate heater.

[0006] The lower half-moon heater has a first support rotation assembly for supporting the substrate on the side facing the first reaction space, and the lower half-moon heater has a first air flotation channel for suspending and rotating the first support rotation assembly.

[0007] The intermediate heater has a second carrier rotation assembly for supporting the substrate on the side facing the second reaction space. The intermediate heater has a second air flotation channel for suspending and rotating the second carrier rotation assembly. The intermediate heater also has two hollow channels located on both sides of the first air flotation channel.

[0008] Furthermore, the thickness of the outer surface of the intermediate heater in the vertical direction is less than 35 mm, and / or the width of the inner surface of the intermediate heater between the two hollow channels is less than 35 mm.

[0009] Furthermore, the lower half-moon heater is provided with a first protective component surrounding the first bearing rotation assembly on the side facing the first reaction space, and / or, the middle heater is provided with a second protective component surrounding the second bearing rotation assembly on the side facing the second reaction space.

[0010] Furthermore, the first protective component includes a first upstream protective component and a first downstream protective component distributed along the airflow direction in the first reaction space, and the first upstream protective component has a first inclined surface at the end away from the first downstream protective component.

[0011] Furthermore, the first upstream protective component includes two first upstream protective plates symmetrically arranged on one side of the first load-bearing rotating assembly, and each of the two first upstream protective plates is provided with a first inclined surface; the first downstream protective component includes two first downstream protective plates symmetrically arranged on the other side of the first load-bearing rotating assembly, and a first central protective plate located between the two first downstream protective plates.

[0012] Furthermore, the second protective assembly includes a second upstream protective component and a second downstream protective component distributed along the airflow direction within the second reaction space, wherein the end of the second upstream protective component away from the second downstream protective component is provided with a second inclined surface.

[0013] Furthermore, the second upstream protective component includes two second upstream protective plates symmetrically arranged on one side of the second load-bearing rotating assembly, and each of the two second upstream protective plates is provided with a second inclined surface; the second downstream protective component includes two second downstream protective plates symmetrically arranged on the other side of the second load-bearing rotating assembly, and a second central protective plate located between the two second downstream protective plates.

[0014] Furthermore, it also includes a lower heat insulation cover disposed outside the lower half-moon heater, an upper heat insulation cover disposed outside the upper half-moon heater, and an upstream heat insulation end cover and a downstream heat insulation end cover connected to both ends of the lower heat insulation cover and the upper heat insulation cover; wherein, the upstream heat insulation end cover is equipped with a reaction gas blowing component that is connected to the first reaction space and the second reaction space respectively, and an air flotation blowing component that is connected to the first air flotation channel and the second air flotation channel respectively.

[0015] Furthermore, the reaction gas blowing component includes an inner reaction gas blowing sleeve with one end inserted into the first reaction space or the second reaction space, and an outer reaction gas blowing sleeve with one end inserted into the other end of the inner reaction gas blowing sleeve; the air flotation blowing component includes an inner air flotation nozzle with one end inserted into the first air flotation channel or the second air flotation channel, and an outer air flotation nozzle with one end inserted into the other end of the inner air flotation nozzle.

[0016] This utility model also provides an epitaxial growth apparatus, including a furnace body, an induction coil wound around the outside of the furnace body, and a reaction chamber disposed inside the furnace body. The reaction chamber adopts the reaction chamber for epitaxial growth as described above.

[0017] Compared with existing technologies, the beneficial effects of the reaction chamber and epitaxial growth equipment provided by this invention are as follows: By adding an intermediate heater, the upper and lower half-moon heaters and the intermediate heater can all generate induced heat through electromagnetic induction by an external induction coil, thereby accelerating the heating rate of the reaction chamber and effectively improving temperature uniformity. Simultaneously, two independent reaction spaces are formed between the upper and lower half-moon heaters and the intermediate heater, thus enabling the simultaneous generation of multiple epitaxial layers. Furthermore, the intermediate heater contains a first air flotation channel and two hollow channels on either side of the first air flotation channel. When air is introduced, the first air flotation channel can blow up and rotate the first bearing rotating component, while the hollow channels serve to reduce the thickness of the intermediate heater and generate eddy current heating during induction heating. Therefore, this invention not only increases yield but also optimizes the temperature uniformity of the reaction chamber, thereby ensuring good and stable epitaxial layer quality. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is an explosion diagram of the reaction chamber of this utility model;

[0020] Figure 2 This is a schematic diagram of the structure of the intermediate heater of this utility model;

[0021] Figure 3 This is a side view of the reaction chamber of this utility model;

[0022] Figure 4 for Figure 3 Sectional view of AA;

[0023] Figure 5 This is a partial schematic diagram of the reaction chamber of this utility model;

[0024] Figure 6 This is a schematic diagram of the reaction chamber of this utility model;

[0025] The main markings in the attached figures are as follows:

[0026] 11. Lower half-month heater; 12. Intermediate heater; 13. Upper half-month heater;

[0027] 21. First air flotation channel; 22. Second air flotation channel; 23. Hollow channel;

[0028] 30. Side support plate;

[0029] 41. First air flotation turntable; 42. First support tray; 43. First fixing retaining ring;

[0030] 44. Second air flotation turntable; 45. Second load-bearing tray; 46. Second fixed retaining ring;

[0031] 51. First upstream protective plate; 52. First downstream protective plate; 53. First central protective plate; 511. First inclined surface;

[0032] 54. Second upstream protective plate; 55. Second downstream protective plate; 56. Second central protective plate; 541. Second inclined plane;

[0033] 61. Lower heat shield; 62. Upper heat shield; 63. Upstream heat shield end cap; 64. Downstream heat shield end cap;

[0034] 71. Internal gas blowing sleeve for reacting gas; 72. External gas blowing sleeve for reacting gas;

[0035] 81. Internal air inlet for air flotation; 82. External air inlet for air flotation;

[0036] 91. Inner brushing nozzle for blowing air; 92. Outer brushing nozzle for blowing air. Detailed Implementation

[0037] To make the technical problems, technical solutions, and beneficial effects of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit the present utility model.

[0038] Please refer to the following: Figures 1 to 4 This invention proposes a reaction chamber for epitaxial growth, comprising a lower crescent heater 11, an intermediate heater 12, and an upper crescent heater 13 arranged sequentially in a vertical direction. A first reaction space is formed between the lower crescent heater 11 and the intermediate heater 12, and a second reaction space is formed between the upper crescent heater 13 and the intermediate heater 12. The lower crescent heater 11 has a first carrier rotation assembly for supporting the substrate on the side facing the first reaction space, and a first air flotation channel 21 for suspending and rotating the first carrier rotation assembly is provided inside the lower crescent heater 11. The intermediate heater 12 has a second carrier rotation assembly for supporting the substrate on the side facing the second reaction space, and a second air flotation channel 22 for suspending and rotating the second carrier rotation assembly is provided inside the intermediate heater 12. The intermediate heater 12 has two hollow channels 23 located on both sides of the first air flotation channel 21, and the hollow channels 23 are preferably rectangular through holes penetrating the intermediate heater 12.

[0039] This invention, by adding an intermediate heater 12, enables the upper and lower crescent heaters 11 and the intermediate heater 12 to generate induced heat through electromagnetic induction by an external induction coil, thereby accelerating the heating rate of the reaction chamber and effectively improving temperature uniformity. Simultaneously, the upper and lower crescent heaters 11 and the intermediate heater 12 form two independent reaction spaces, enabling the simultaneous generation of multiple epitaxial layers. Furthermore, the intermediate heater 12 contains a first air flotation channel 21 and two hollow channels 23 located on either side of the first air flotation channel 21. When air is introduced through the first air flotation channel 21, it can blow up and rotate the first supporting rotating component, while the hollow channels 23 serve to reduce the thickness of the intermediate heater 12 and generate eddy current heating during induction heating. Therefore, this invention not only increases yield but also optimizes the temperature uniformity of the reaction chamber, thereby ensuring good and stable epitaxial layer quality.

[0040] In some embodiments of this utility model, such as Figure 2 As shown, the intermediate heater 12 adopts a cuboid structure design to form a sealed heating chamber, namely the first and second reaction spaces, together with the upper and lower crescent heaters 11. A circular heating recess is provided in the center of the intermediate heater 12 for placing the first load-bearing rotating component. Energy is directly transferred to the first load-bearing rotating component through heat conduction, thereby directly heating the substrate (wafer). The intermediate heater 12 has a first air flotation channel 21 inside, which has a centrally symmetrical oblique hole. The end of the oblique hole away from the first air flotation channel 21 passes through the circular heating recess, thereby providing airflow support for the first load-bearing rotating component.

[0041] In addition, the thickness n of the outer surface of the intermediate heater 12 in the vertical direction is less than 35 mm, and / or the width m of the inner surface of the intermediate heater 12 located between the two hollow channels 23 is less than 35 mm.

[0042] This invention sets the thickness of all heating points to no more than 35 mm, ensuring it does not exceed the induced current depth of a one-piece epitaxial furnace. Because the addition of the intermediate heater 12 enables uniform heating, the upper half-moon heater 13 and the lower half-moon heater 11 can be designed to be smaller, resulting in a more compact overall structure. Figure 6 As shown, the width s and height h of the overall structure are consistent with the heaters in the existing one-piece epitaxial equipment, ensuring that it is compatible with the growth furnace of the one-piece epitaxial furnace, and the thickness distribution of the entire device is more uniform.

[0043] In some embodiments of this utility model, the upper and lower half-moons of the heater are connected by two side support plates 30, and the middle heater 12 is fixed between the two side support plates 30. The first bearing rotation assembly consists of the following parts: a first air flotation turntable 41 rotatably disposed on the lower half-moon heater 11, a first bearing tray 42 for supporting the substrate, and a first fixing ring 43 for fixing the first bearing tray 42 to the first air flotation turntable 41. Similarly, the second bearing rotation assembly also consists of the following parts: a second air flotation turntable 44 rotatably disposed on the middle heater 12, a second bearing tray 45 for supporting the substrate, and a second fixing ring 46 for fixing the second bearing tray 45 to the second air flotation turntable 44.

[0044] In some embodiments of this invention, the lower half-moon heater 11 is provided with a first protective component surrounding the first load-bearing rotation assembly on the side facing the first reaction space, and / or the middle heater 12 is provided with a second protective component surrounding the second load-bearing rotation assembly on the side facing the second reaction space. By installing protective components on the heaters, the deposition of thin films on the heater surface during epitaxial growth is effectively prevented, thereby improving the uptime of the equipment.

[0045] The first protective assembly includes a first upstream protective component and a first downstream protective component distributed along the airflow direction within the first reaction space. The first upstream protective component has a first inclined surface 511 at its end furthest from the first downstream protective component. When the reactive gas is blown into the first reaction space, it first passes through the first upstream protective component and then blows towards the first air flotation turntable 41 in the first bearing rotating assembly. Because the first upstream protective component is designed with the first inclined surface 511, this design allows the reactive gas to provide a certain amount of lift to the first air flotation turntable 41. Therefore, the inclined holes on the first air flotation channel 21 can be set with a larger inclination, thereby providing a larger tangential force to the first air flotation turntable 41.

[0046] like Figure 1 , Figure 5 As shown, the first upstream protective component includes two first upstream protective plates 51 symmetrically arranged on one side of the first load-bearing rotating assembly, each of which has a first inclined surface 511. The first downstream protective component includes two first downstream protective plates 52 symmetrically arranged on the other side of the first load-bearing rotating assembly, and a first central protective plate 53 located between the two first downstream protective plates 52. Meanwhile, the lower half-moon heater 11 has positioning holes for installing the first upstream protective plates 51, the first downstream protective plates 52, and the first central protective plate 53. By having the first upstream protective component composed of two first upstream protective plates 51, and the first downstream protective component comprising two first downstream protective plates 52 and a first central protective plate 53, it is possible to ensure protective performance while facilitating processing, disassembly, and replacement.

[0047] Similarly, the second protective assembly includes a second upstream protective component and a second downstream protective component distributed along the airflow direction within the second reaction space. The end of the second upstream protective component away from the second downstream protective component has a second inclined surface 541. When the reactive gas is blown into the second reaction space, it first passes through the second upstream protective component and is blown towards the second air flotation turntable 44 in the second bearing rotating assembly. Because the second upstream protective component is designed with the second inclined surface 541, this design allows the reactive gas to provide a certain lift to the second air flotation turntable 44. Therefore, the inclined holes on the second air flotation channel 22 can be set with a larger inclination, thereby providing a larger tangential force to the second air flotation turntable 44.

[0048] like Figure 1 , Figure 5 As shown, the second upstream protective component includes two second upstream protective plates 54 symmetrically arranged on one side of the second load-bearing rotating assembly, each of which has a second inclined surface 541. The second downstream protective component includes two second downstream protective plates 55 symmetrically arranged on the other side of the second load-bearing rotating assembly, and a second central protective plate 56 located between the two second downstream protective plates 55. Meanwhile, the intermediate heater 12 has positioning holes for installing the second upstream protective plates 54, the second downstream protective plates 55, and the second central protective plate 56. By having the second upstream protective component composed of two second upstream protective plates 54, and the second downstream protective component comprising two second downstream protective plates 55 and a second central protective plate 56, it is possible to ensure protective performance while facilitating processing, disassembly, and replacement.

[0049] In some embodiments of this utility model, it further includes a lower heat insulation cover 61 disposed outside the lower half-moon heater 11, an upper heat insulation cover 62 disposed outside the upper half-moon heater 13, and an upstream heat insulation end cap 63 and a downstream heat insulation end cap 64 connected to both ends of the lower heat insulation cover 61 and the upper heat insulation cover 62. This design effectively ensures the heat preservation performance of the first and second reaction spaces and effectively prevents heat loss.

[0050] The upstream heat-insulating end cap 63 is equipped with a reaction gas blowing component that communicates with both the first and second reaction spaces. The reaction gas blowing component includes an inner reaction gas blowing sleeve 71, one end of which is inserted into either the first or second reaction space, and an outer reaction gas blowing sleeve 72, one end of which is inserted into the other end of the inner reaction gas blowing sleeve 71. The other end of the outer reaction gas blowing sleeve 72 is connected to other process pipelines. The inner and outer reaction gas blowing sleeves 71 and 72 are designed as a stepped guide fitting structure. This design allows the reaction gas to flow in a single direction, and by fitting the smaller end into the larger end, it not only effectively improves the sealing performance of the pipeline interface and the reaction space but also facilitates installation, disassembly, and maintenance.

[0051] Meanwhile, the upstream insulated end cap 63 is equipped with air flotation blowing components that are respectively connected to the first air flotation channel 21 and the second air flotation channel 22. The air flotation blowing component includes an inner air flotation nozzle 81 with one end inserted into the first air flotation channel 21 or the second air flotation channel 22, and an outer air flotation nozzle 82 with one end inserted into the other end of the inner air flotation nozzle 81. The other end of the outer air flotation nozzle 82 is connected to other process pipelines. The inner air flotation nozzle 81 and the outer air flotation nozzle 82 are designed as a stepped guide fitting structure. The reason for this design is that the air flotation gas can flow in a single direction. By fitting the smaller end into the larger end, not only is the sealing at the pipeline interface effectively improved, but installation, disassembly, and maintenance are also facilitated.

[0052] Meanwhile, the upstream heat-insulating end cap 63 is equipped with air-blowing nozzle components that are respectively connected to the upper half-moon heater 13 and the lower half-moon heater 11. The air-blowing nozzle component includes an inner air-blowing nozzle 91, one end of which is connected to the interior of the upper half-moon heater 13 or the lower half-moon heater 11, and an outer air-blowing nozzle 92, one end of which is inserted into the other end of the inner air-blowing nozzle 91. The other end of the outer air-blowing nozzle 92 is connected to other process pipelines. The inner air-blowing nozzle 91 and the outer air-blowing nozzle 92 are designed as a stepped guide fitting structure. The reason for this design is that the blowing gas can flow in a single direction. By fitting the smaller end into the larger end, not only is the sealing at the pipeline interface effectively improved, but installation, disassembly, and maintenance are also facilitated. Inert gas is introduced through the air-blowing nozzle components, filling the upper half-moon heater 13 and the lower half-moon heater 11 with an atmosphere, maintaining the cleanliness of the reaction chamber, thereby improving production efficiency and product quality.

[0053] This utility model also provides an epitaxial growth apparatus, including a furnace body, an induction coil wound around the outside of the furnace body, and a reaction chamber disposed inside the furnace body. The reaction chamber adopts the reaction chamber for epitaxial growth as described above.

[0054] This invention improves the heating rate and temperature uniformity of the reaction chamber by adding an intermediate heater inside the reaction chamber, which has an internal air flotation channel. This allows for uniform heating during induction coil heating. Furthermore, the overall structure is more compact, ensuring compatibility between the heater and the external insulation layer with a one-piece epitaxial furnace. The thickness distribution of the entire device is also more uniform, with the thickness at all heating points not exceeding 35 mm, lower than the induction current depth of a one-piece epitaxial furnace. Additionally, by installing multiple protective plates on the lower half-moon heater and the intermediate heater, and designing a slope on the upstream protective plate, the reactant gas, after passing through the slope, provides both a gas source and buoyancy to the reaction space, allowing for a larger slope in the inclined holes of the air flotation channel. Moreover, the interfaces of the reactant gas and other atmosphere pipes all employ a stepped guide fitting structure, facilitating pipe sealing and disassembly / reinstallation.

[0055] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A reaction chamber for epitaxial growth, characterized in that, It includes a lower half-moon heater, an intermediate heater and an upper half-moon heater arranged sequentially in a vertical direction. The lower half-moon heater and the intermediate heater form a first reaction space, and the upper half-moon heater and the intermediate heater form a second reaction space. The lower half-moon heater is provided with a first support rotation component for supporting the substrate on the side facing the first reaction space, and the lower half-moon heater is provided with a first air flotation channel for suspending and rotating the first support rotation component. The intermediate heater is provided with a second carrier rotation component for supporting the substrate on the side facing the second reaction space. The intermediate heater is provided with a second air flotation channel for suspending and rotating the second carrier rotation component. The intermediate heater is provided with two hollow channels located on both sides of the first air flotation channel.

2. The reaction chamber for epitaxial growth as described in claim 1, characterized in that, The thickness of the outer surface of the intermediate heater in the vertical direction is less than 35 mm, and / or the width of the inner surface of the intermediate heater between the two hollow channels is less than 35 mm.

3. The reaction chamber for epitaxial growth as described in claim 1, characterized in that, The lower half-moon heater is provided with a first protective component surrounding the first load-bearing rotating assembly on the side facing the first reaction space, and / or the middle heater is provided with a second protective component surrounding the second load-bearing rotating assembly on the side facing the second reaction space.

4. The reaction chamber for epitaxial growth as described in claim 3, characterized in that, The first protective component includes a first upstream protective component and a first downstream protective component distributed along the airflow direction in the first reaction space, and the first upstream protective component has a first inclined surface at the end away from the first downstream protective component.

5. The reaction chamber for epitaxial growth as described in claim 4, characterized in that, The first upstream protective component includes two first upstream protective plates symmetrically arranged on one side of the first load-bearing rotating assembly, and each of the two first upstream protective plates is provided with the first inclined surface; the first downstream protective component includes two first downstream protective plates symmetrically arranged on the other side of the first load-bearing rotating assembly, and a first central protective plate located between the two first downstream protective plates.

6. The reaction chamber for epitaxial growth as described in claim 3, characterized in that, The second protective component includes a second upstream protective component and a second downstream protective component distributed along the airflow direction in the second reaction space, wherein the second upstream protective component has a second inclined surface at the end away from the second downstream protective component.

7. The reaction chamber for epitaxial growth as described in claim 6, characterized in that, The second upstream protective component includes two second upstream protective plates symmetrically arranged on one side of the second load-bearing rotating assembly, and each of the two second upstream protective plates is provided with the second inclined surface; the second downstream protective component includes two second downstream protective plates symmetrically arranged on the other side of the second load-bearing rotating assembly, and a second central protective plate located between the two second downstream protective plates.

8. The reaction chamber for epitaxial growth as described in any one of claims 1 to 7, characterized in that, It also includes a lower heat insulation cover disposed outside the lower half-moon heater, an upper heat insulation cover disposed outside the upper half-moon heater, and an upstream heat insulation end cap and a downstream heat insulation end cap connected to both ends of the lower heat insulation cover and the upper heat insulation cover; wherein, the upstream heat insulation end cap is equipped with a reaction gas blowing component that is connected to the first reaction space and the second reaction space respectively, and an air flotation blowing component that is connected to the first air flotation channel and the second air flotation channel respectively.

9. The reaction chamber for epitaxial growth as described in claim 8, characterized in that, The reactant gas blowing component includes an inner reactant gas blowing sleeve with one end inserted into the first reactant space or the second reactant space, and an outer reactant gas blowing sleeve with one end inserted into the other end of the inner reactant gas blowing sleeve; the air flotation blowing component includes an inner air flotation nozzle with one end inserted into the first air flotation channel or the second air flotation channel, and an outer air flotation nozzle with one end inserted into the other end of the inner air flotation nozzle.

10. An epitaxial growth apparatus, comprising a furnace body, an induction coil wound around the outside of the furnace body, and a reaction chamber disposed inside the furnace body, characterized in that, The reaction chamber is the same as any one of claims 1 to 9 used for epitaxial growth.

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