A substrate table structure for batch growth of single crystal diamond of different thicknesses

Abstract

This invention provides a substrate stage structure for batch growth of single-crystal diamonds of varying thicknesses, belonging to the field of diamond preparation technology using chemical vapor deposition. The substrate stage structure includes a substrate stage with at least two seed crystal placement positions for placing diamond seed crystals. The structure also includes spacers placed one-to-one on each seed crystal placement position. The bottom surfaces of each spacer are in the same plane, and their top surfaces serve as seed crystal support surfaces. At least two of the spacers have different thicknesses, and the thickness of each spacer is equal to the sum of the thicknesses of the corresponding supported diamond seed crystals. This invention ensures that the upper surfaces of the single-crystal diamond seed crystals are at the same height by using spacers of varying thicknesses, enabling batch production of single-crystal diamond seed crystals of different thicknesses. This facilitates large-scale production of single-crystal diamonds and effectively reduces production costs.

Description

Technical Field

[0001] This utility model relates to a substrate stage structure for batch growth of single-crystal diamonds of different thicknesses, belonging to the field of diamond preparation technology by chemical vapor deposition. Background Technology

[0002] Microwave chemical vapor deposition (MPCVD) has become the primary method for preparing high-quality, large-size single-crystal diamonds. Single-crystal diamond growth is carried out on a substrate stage with multiple seed crystal placement positions for each seed crystal. Diamond growth is highly sensitive to synthesis temperature; only at suitable temperatures can high-quality single-crystal diamonds be produced. The difference in seed crystal thickness is a significant factor affecting temperature uniformity. Because the support surfaces of each seed crystal placement position are on the same plane, single-crystal diamond seed crystals of varying thicknesses placed on the substrate stage result in uneven top surfaces, making it impossible to guarantee relatively consistent temperatures and hindering large-scale production and growth.

[0003] Therefore, in actual production, to ensure the relative consistency and uniformity of the temperature of multiple single-crystal diamond seed crystals in a single batch, there are usually strict requirements on the thickness difference of the single-crystal diamond seed crystals grown in a single batch. In order to make the single-crystal diamond seed crystals achieve similar thicknesses, thicker single-crystal diamond seed crystals need to be processed to a thickness similar to that of thinner single-crystal diamond seed crystals before production scheduling, resulting in serious waste and increased production costs. Utility Model Content

[0004] The purpose of this invention is to provide a substrate stage structure for growing single-crystal diamonds of different thicknesses in the same batch, so as to solve the problem in the prior art that it is necessary to process thicker single-crystal diamond seed crystals to a thickness similar to that of thinner single-crystal diamond seed crystals before production scheduling, which leads to material waste and increased production costs.

[0005] To achieve the above objectives, the present invention adopts the following technical solution:

[0006] A substrate stage structure for batch growth of single-crystal diamonds of different thicknesses is disclosed. The substrate stage structure includes a substrate stage with at least two seed crystal placement positions for placing diamond seed crystals respectively. The substrate stage structure also includes spacers for correspondingly placing on each seed crystal placement position. The bottom surface of each spacer is in the same plane after placement, and the top surface is a seed crystal support surface for supporting the diamond seed crystal. At least two of the spacers have different thicknesses, and the thickness of each spacer satisfies the same value as the sum of the thicknesses of the corresponding supported diamond seed crystals.

[0007] The beneficial effects of the above technical solution are as follows: This utility model is an improved invention. The improvement lies in that the substrate stage structure also includes pads for placing on each seed crystal placement position. The bottom surface of each pad is in the same plane after placement, and the top surface is the seed crystal support surface for supporting the diamond seed crystal. That is, this utility model supports the diamond seed crystal by adding pads. At least two of the pads have different thicknesses, and the thickness of each pad satisfies the same value as the sum of the thickness of the corresponding supported diamond seed crystal. In other words, through the transition of pads of different thicknesses, the top surfaces of each diamond seed crystal are in the same plane. This eliminates the need to process thick diamond seed crystals. Only pads of corresponding thickness need to be placed according to the thickness of the diamond seed crystal. This enables the same batch production of single crystal diamond seed crystals of different thicknesses, which helps to realize the large-scale production of single crystal diamonds. Although the improved solution increases the amount of spacers used, the spacers are reusable and are part of the substrate stage structure. In contrast, the seed crystals processed out in the prior art are completely wasted, and the seed crystals are very expensive. Therefore, this invention can avoid waste and reduce production costs.

[0008] Furthermore, the substrate stage is provided with positioning grooves at each seed crystal placement position for positioning the spacer. The spacer has a positioning part for insertion into the positioning groove and a support part located outside the positioning groove. The seed crystal support surface is the top surface of the support part.

[0009] Furthermore, the positioning groove is a circular groove, and the positioning part is cylindrical.

[0010] Furthermore, the support section is in the shape of a cube.

[0011] Furthermore, the cross-sectional area of ​​the support part is larger than that of the positioning part, and a stepped surface is formed between the support part and the positioning part.

[0012] Furthermore, the substrate stage is provided with a gasket support surface at each seed crystal placement position for cooperating with the stepped surface support of the gasket.

[0013] Furthermore, the positioning parts of each gasket are at the same height.

[0014] Furthermore, the bottom wall of the positioning groove is used to make contact with the bottom surface of the positioning part.

[0015] Furthermore, a recess is provided on the top surface of the substrate stage, and partitions are arranged in rows and columns on the bottom wall of the recess. The partitions form grid grooves between each other and between each partition and the side wall of the recess. Each grid groove forms a seed crystal placement position.

[0016] Furthermore, an annular groove is provided on the bottom surface of the substrate stage for adjusting the overall temperature of the substrate stage. Attached Figure Description

[0017] Figure 1 This is a perspective view of the substrate stage in the embodiment of the substrate stage structure of this utility model;

[0018] Figure 2 This is a top view of the substrate stage in the embodiment of the substrate stage structure of this utility model;

[0019] Figure 3 This is a front sectional view of the substrate stage and the gasket in the embodiment of the substrate stage structure of this utility model;

[0020] Figure 4 This is a bottom view of the substrate stage in the embodiment of the substrate stage structure of this utility model;

[0021] Figure 5 This is a front view of the gasket in the substrate stage structure embodiment of this utility model;

[0022] Figure 6 This is a top view of the gasket in the substrate stage structure embodiment of this utility model.

[0023] In the figure: 1. Substrate stage; 11. Pit bottom wall; 12. Pit side wall; 13. Horizontal diaphragm; 14. Longitudinal diaphragm; 15. Positioning groove; 16. Annular groove; 2. Gasket; 21. Positioning part; 22. Support part; 23. Step surface. Detailed Implementation

[0024] To address the technical problems existing in the prior art, the basic concept of this utility model is to support the diamond seed crystal by adding shims. By using the difference in thickness of each shim, the top surface of each diamond seed crystal is ensured to be in the same plane, thus eliminating the need to process thick diamond seed crystals, avoiding waste, and reducing production costs.

[0025] The features and performance of this utility model will be further described in detail below with reference to the embodiments.

[0026] The following is an embodiment of the substrate stage structure (hereinafter referred to as substrate stage structure) used for batch growth of single crystal diamonds of different thicknesses in this utility model:

[0027] like Figure 1 and Figure 2 As shown, the substrate stage structure includes a substrate stage 1, which is a cylindrical structure. The substrate stage 1 is provided with at least two seed crystal placement positions for placing diamond seed crystals, and the seed crystal placement positions are arranged in multiple rows linearly.

[0028] Specifically, in this embodiment, a recess is provided on the top surface of the substrate stage 1, and the recess has a bottom wall 11 and a side wall 12. The bottom wall 11 of the recess is provided with partitions arranged in rows and columns, and the partitions are all perpendicular to the bottom wall 11. The partitions and the bottom wall 11 can be integrally formed, or slots can be provided on the bottom wall 11, and each partition is separately inserted into the corresponding slot.

[0029] The partitions form grid grooves between each other and between the partitions and the pit sidewalls 12 of the pit. Each grid groove forms a seed crystal placement position. Therefore, the partitions serve to separate the single crystal diamond seed crystals and limit their position.

[0030] Specifically, the partitions arranged in rows are transverse partitions 13 extending laterally, with each transverse partition 13 in a row arranged at equal intervals; the partitions arranged in columns are longitudinal partitions 14 extending longitudinally, with each longitudinal partition 14 in a column also arranged at equal intervals, and the longitudinal partitions 14 are arranged perpendicular to the transverse partitions 13. A grid groove is formed between a pair of longitudinal partitions 14 and a corresponding pair of transverse partitions 13, between a pair of longitudinal partitions 14 and a corresponding transverse partition 13 and the pit sidewall 12, between a pair of transverse partitions 13 and a corresponding longitudinal partition 14 and the pit sidewall 12, and between a transverse partition 13 and a corresponding longitudinal partition 14 and two perpendicularly connected pit sidewalls 12.

[0031] In this embodiment, each grid groove is a square groove, meaning that the lateral length of each transverse partition 13 is equal to the longitudinal length of each longitudinal partition 14. In other embodiments, depending on the specific shape of the seed crystal, each grid groove may also be a rectangular groove.

[0032] like Figure 3 As shown, the substrate stage structure of this utility model also includes pads 2 for being placed one-to-one on each seed crystal placement position. The bottom surfaces of each pad 2 are in the same plane after placement, and the top surface is a seed crystal support surface for supporting the diamond seed crystal. Each pad 2 can be a molybdenum pad or a silicon carbide pad.

[0033] At least two of the spacers 2 have different thicknesses. Depending on the specific situation, this could be two spacers with different thicknesses, three spacers with different thicknesses, more spacers with different thicknesses, or all spacers with different thicknesses. However, the thickness of each spacer 2 must be equal to the sum of the thicknesses of the diamond seed crystals it supports. This transition between spacers 2 of different thicknesses ensures that the top surfaces of all diamond seed crystals are on the same plane. Therefore, there is no need to process thicker diamond seed crystals; only spacers 2 of corresponding thicknesses need to be placed according to the thickness of the diamond seed crystal. This allows for the simultaneous production of single-crystal diamond seed crystals of different thicknesses, facilitating large-scale production of single-crystal diamonds.

[0034] It should be noted that although the improved solution increases the amount of spacer 2, spacer 2 is reusable and is part of the substrate stage structure. In contrast, the seed crystals processed out in the prior art are completely wasted, and the seed crystals are very expensive. Therefore, this invention can avoid waste and reduce production costs.

[0035] Furthermore, to facilitate the placement of each pad 2 and prevent the pads 2 from shifting after placement, the substrate stage 1 in this embodiment is provided with positioning grooves 15 for positioning the pads 2 at each seed crystal placement position; that is, positioning grooves 15 are provided on the bottom wall 11 of each grid groove. Combined with Figure 5 and Figure 6 As shown, the gasket 2 has a positioning part 21 for insertion into the positioning groove 15 and a support part 22 located outside the positioning groove 15, wherein the seed crystal support surface is the top surface of the support part 22.

[0036] In other embodiments, the top surface of the substrate stage 1 may no longer have a recess, and of course, there are no horizontal or vertical partitions. In this case, there is no longer a grid groove, but the top surface of the substrate stage 1 is directly used to form a seed crystal placement position, and the positioning groove is directly set on the top surface of the substrate stage 1.

[0037] Furthermore, in this embodiment, the positioning groove 15 is a circular groove, and the positioning part 21 is cylindrical, which facilitates processing. The inner diameter of the positioning groove 15 matches the outer diameter of the positioning part 21, ensuring the positioning effect. The support part 22 is cuboid in shape, which matches the shape of the square diamond seed crystal, ensuring sufficient support area. In addition, the cross-sectional area of ​​the support part 22 is larger than the cross-sectional area of ​​the positioning part 21, and a stepped surface 23 is formed between the support part 22 and the positioning part 21. When the gasket 2 is placed, the bottom wall 11 of each grid groove is in contact with the stepped surface 23, forming a gasket support surface for cooperating with the stepped surface 23, ensuring the stable placement of the gasket 2.

[0038] Of course, in other embodiments, even if a stepped surface 23 is formed between the support portion 22 and the positioning portion 21, the stepped surface 23 may not contact the pit bottom wall 11, but may be higher than the pit bottom wall 11. In this case, the substrate stage no longer has a gasket support surface that cooperates with the stepped surface of the gasket. Of course, in other embodiments, if no recess is provided on the top surface of the substrate stage 1, the stepped surface 23 is higher than the top surface of the substrate stage 1.

[0039] In other embodiments, even if the support portion 22 is cuboid, no stepped surface is formed between it and the positioning portion 21. For example, the outer diameter of the positioning portion 21 is the same as the diameter of the inscribed circle of the support portion 22. In this case, the four corners of the support portion 22 form protruding sharp corners.

[0040] In other embodiments, when the cross-sectional area of ​​the support portion 22 is larger than the cross-sectional area of ​​the positioning portion 21, and a stepped surface is formed between them, the support portion 22 and the positioning portion 21 can both be cylindrical or both be cuboid. Of course, in other embodiments, the cross-sectional area of ​​the support portion 22 can also be equal to the cross-sectional area of ​​the positioning portion 21. For example, the gasket 2 can be a cylinder of equal diameter, with a portion inserted into the positioning groove 15 to form the positioning portion 21, and the remaining portion located outside the positioning groove 15 to form the support portion 22. Alternatively, the gasket 2 can also be a square prism of equal cross-section.

[0041] In this embodiment, the depth of each positioning groove 15 is the same, and the height of the positioning part 21 of each gasket 2 is the same, and the height of the positioning part 21 is the same as the depth of the positioning groove 15. This ensures that the bottom wall of the positioning groove 15 can make contact with the bottom surface of the positioning part 21, guaranteeing stable support for the gasket 2. In other embodiments, the depth of the positioning groove 15 can be greater than the height of the positioning part 21, meaning the bottom wall of the positioning groove 15 does not contact the bottom surface of the positioning part 21. In this case, the heights of the positioning parts of different gaskets can be different, and only the bottom wall 11 of the pit supports the stepped surface 23 of the gasket 2. Of course, in other embodiments, if no recess is provided on the top surface of the substrate stage 1, then the top surface of the substrate stage 1 supports the stepped surface 23 of the gasket 2.

[0042] Therefore, in this embodiment, the difference in thickness of each gasket 2 is reflected in the difference in height of the support portion 22. In other embodiments, the difference in thickness of each gasket 2 can also be reflected in the difference in the overall height of the gasket 2. For example, the gasket 2 is a cylinder of equal diameter or a square prism of equal cross-section. In this case, a positioning groove can be provided on the substrate for the lower part of the gasket 2 to be inserted, or no positioning groove can be provided, that is, the gasket 2 can be placed directly on the substrate, for example, placed on the bottom wall of the pit in the grid groove, or placed directly on the top surface of the substrate when no pit is provided on the substrate.

[0043] In one specific embodiment, the height of the spacer 2 can be 1-8mm to accommodate single-crystal diamond seed crystals of different thicknesses. The length and width of the spacer 2 must match the square grid groove, while the length and width of the spacer 2 must be slightly larger than the size of the single-crystal diamond seed crystal to ensure sufficient support area. Furthermore, the depth of the square grid groove can be 3-8mm, and the length and width can be 6-40mm (adjustable according to the length and width of the single-crystal diamond). The width of the partition is 0.5-3mm, and its length can be adjusted according to the length of the seed crystal.

[0044] In addition, such as Figure 4As shown, in this embodiment, an annular groove 16 for adjusting the overall temperature of the substrate stage 1 is provided on the bottom surface. The position of the annular groove 16 corresponds to the seed crystal placement position at the edge. In other embodiments, the annular groove may not be provided on the bottom surface of the substrate stage 1, and the bottom surface may be a plane. In actual production, the substrate stage is generally placed on a water-cooled platform, and the water-cooled platform regulates the overall temperature of the substrate stage.

[0045] In summary, this invention solves the problem of inconsistent production scheduling for single-crystal diamonds of different thicknesses. The substrate stage structure of this invention ensures that the upper surface of the single-crystal diamond seed crystal is at the same height by using different thicknesses of the spacers, thus enabling the same batch production of single-crystal diamond seed crystals of different thicknesses. This helps to achieve large-scale production of single-crystal diamonds and effectively reduces production costs.

[0046] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. The patent protection scope of the present utility model shall be determined by the claims. Similarly, any equivalent structural changes made based on the description and drawings of the present utility model shall also be included within the protection scope of the present utility model.

Claims

1. A substrate stage structure for batch growth of single-crystal diamonds of different thicknesses, the substrate stage structure comprising a substrate stage, wherein at least two seed crystal placement positions are provided on the substrate stage for placing diamond seed crystals respectively, characterized in that, The substrate stage structure also includes spacers for placing one-to-one on each seed crystal placement position. The bottom surface of each spacer is in the same plane after placement, and the top surface is a seed crystal support surface for supporting the diamond seed crystal. At least two of the spacers have different thicknesses, and the thickness of each spacer is equal to the sum of the thickness of the corresponding supported diamond seed crystal.

2. The substrate stage structure for batch growth of single-crystal diamonds of different thicknesses according to claim 1, characterized in that, The substrate stage has positioning grooves at each seed crystal placement position for positioning the spacer. The spacer has a positioning part for insertion into the positioning groove and a support part located outside the positioning groove. The seed crystal support surface is the top surface of the support part.

3. The substrate stage structure for batch growth of single-crystal diamonds of different thicknesses according to claim 2, characterized in that, The positioning groove is a circular groove, and the positioning part is cylindrical.

4. The substrate stage structure for batch growth of single-crystal diamonds of different thicknesses according to claim 2 or 3, characterized in that, The support part is in the shape of a cube.

5. The substrate stage structure for batch growth of single-crystal diamonds of different thicknesses according to claim 2 or 3, characterized in that, The cross-sectional area of ​​the support part is larger than that of the positioning part, and a stepped surface is formed between the support part and the positioning part.

6. The substrate stage structure for batch growth of single-crystal diamonds of different thicknesses according to claim 5, characterized in that, Each seed crystal placement position on the substrate stage is provided with a pad support surface for cooperating with the stepped surface support of the pad.

7. The substrate stage structure for batch growth of single-crystal diamonds of different thicknesses according to claim 5, characterized in that, The positioning parts of each gasket are at the same height.

8. The substrate stage structure for batch growth of single-crystal diamonds of different thicknesses according to claim 2 or 3, characterized in that, The bottom wall of the positioning groove is used to make contact with the bottom surface of the positioning part.

9. The substrate stage structure for batch growth of single-crystal diamonds of different thicknesses according to any one of claims 1 to 3, characterized in that, The top surface of the substrate stage has a recess, and the bottom wall of the recess has partitions arranged in rows and columns. The partitions form grid grooves between each other and between each partition and the side wall of the recess. Each grid groove forms a seed crystal placement position.

10. The substrate stage structure for batch growth of single-crystal diamonds of different thicknesses according to any one of claims 1 to 3, characterized in that, The bottom surface of the substrate stage has an annular groove for adjusting the overall temperature of the substrate stage.

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