Sensors and electronic devices

Abstract

This utility model provides a sensor and an electronic device, relating to the field of sensors. The sensor includes: a substrate; a first conductive layer disposed on the substrate, the first conductive layer including a plurality of conductive structures, each conductive structure including a first conductive portion and a second conductive portion arranged along a first direction, the first conductive portion of the conductive structure and the second conductive portion of the conductive structure adjacent to it along the first direction forming a first recess; a resistive layer disposed on the first conductive layer, the resistive layer including a plurality of microstructures, the microstructures being disposed opposite to the first recess, the microstructures being configured to convert received external force into an electrical signal and transmit the electrical signal to the first conductive portion and the second conductive portion; a fixing layer disposed on the resistive layer; and a contact layer disposed on the fixing layer, the contact layer being configured to deform under the action of external force to transmit the external force to the plurality of microstructures.

Description

Technical Field

[0001] This utility model relates to the fields of sensors and artificial intelligence, and in particular to a sensor and electronic device. Background Technology

[0002] Flexible electronic materials are widely used in artificial intelligence fields involving robotics. For example, they can be used as tactile sensors to form the electronic skin of robots. As robots are upgraded, the requirements for the pressure sensing sensitivity of flexible electronic materials are gradually increasing to prevent them from failing to accurately sense external forces. Utility Model Content

[0003] This invention provides a sensor and an electronic device.

[0004] According to a first aspect, the present invention provides a sensor, comprising: a substrate; a first conductive layer disposed on the substrate, the first conductive layer comprising a plurality of conductive structures, each conductive structure comprising a first conductive portion and a second conductive portion arranged along a first direction, the first conductive portion of the conductive structure and the second conductive portion of the conductive structure adjacent to it along the first direction forming a first recess; a resistive layer disposed on the first conductive layer, the resistive layer comprising a plurality of microstructures disposed opposite to the first recess, the microstructures being configured to convert received external force into an electrical signal and transmit the electrical signal to the first conductive portion and the second conductive portion; a fixing layer disposed on the resistive layer; and a contact layer disposed on the fixing layer, the contact layer being configured to deform under the action of an external force to transmit the external force to the plurality of microstructures.

[0005] According to a second aspect, the present invention provides an electronic device, including: a sensor provided by the present invention.

[0006] In embodiments of this invention, the interaction between the microstructure of the resistive layer and the conductive structure of the first conductive layer enhances sensing sensitivity. The microstructure deforms under external force and simultaneously transmits electrical signals to both the first and second conductive portions of the conductive structure. When the degree of deformation of the microstructure towards the first conductive portion differs from that towards the second conductive portion, by comparing the differences in the electrical signals transmitted by the first and second conductive portions, and considering their positional relationship, the direction of the applied external force can be identified, thereby improving the sensor's sensing capability. Attached Figure Description

[0007] Figure 1 A schematic diagram of the structure of a sensor according to an embodiment of the present invention is shown.

[0008] Figure 2AA partial structural schematic diagram of a sensor according to an embodiment of the present invention is shown.

[0009] Figure 2B A schematic diagram of the conductive structure and microstructure according to an embodiment of the present invention is shown.

[0010] Figure 3 A partial structural schematic diagram of a sensor according to another embodiment of the present invention is shown.

[0011] Figure 4 A schematic diagram of the conductive structure and microstructure according to another embodiment of the present invention is shown.

[0012] Figure 5 A schematic diagram of the structure of a sensor according to another embodiment of the present invention is shown.

[0013] Figure 6 A schematic diagram of the structure of a sensor according to another embodiment of the present invention is shown.

[0014] Figure 7 A schematic diagram of the structure of a sensor according to another embodiment of the present invention is shown.

[0015] Figure 8 A schematic diagram illustrating the fabrication of a sensor according to an embodiment of the present invention is shown.

[0016] Figure 9 A schematic diagram of the structure of an electronic device according to an embodiment of the present invention is shown. Detailed Implementation

[0017] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this utility model. Based on the described embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model. In the following description, some specific embodiments are for descriptive purposes only and should not be construed as limiting the utility model in any way, but are merely examples of embodiments of this utility model. Conventional structures or constructions will be omitted where they may cause confusion in understanding the utility model. It should be noted that the shapes and dimensions of the components in the figures do not reflect actual size and proportion, but are only schematic representations of the contents of the embodiments of this utility model.

[0018] Unless otherwise defined, the technical or scientific terms used in the embodiments of this utility model shall have the ordinary meaning as understood by those skilled in the art. The terms "first," "second," and similar terms used in the embodiments of this utility model do not indicate any order, quantity, or importance, but are merely used to distinguish different components.

[0019] Figure 1 A schematic diagram of the structure of a sensor according to an embodiment of the present invention is shown.

[0020] like Figure 1 As shown, the sensor 100 includes a substrate 10, a first conductive layer 20, a resistive layer 30, a fixing layer 40 and a contact layer 50 stacked sequentially from bottom to top along the Z direction.

[0021] In an embodiment of the present invention, the first conductive layer 20 includes a plurality of conductive structures 21. Each conductive structure 21 includes a first conductive portion 211 and a second conductive portion 212 arranged along the first direction X. The first conductive portion 211 of the conductive structure 21 and the second conductive portion 212 of the conductive structure adjacent to it along the first direction X form a first recess C1.

[0022] The resistive layer 30 includes a plurality of microstructures 31, which are disposed opposite to the first recess C1. The microstructures 31 are configured to convert the received external force into an electrical signal and transmit the electrical signal to the first conductive part 211 and the second conductive part 212.

[0023] In embodiments of this invention, the multiple microstructures 31 may be arranged in an array, and the multiple microstructures 31 are not in close contact with each other. The multiple conductive structures 21 may also be arranged in an array, and the multiple conductive structures 21 are also not in close contact with each other.

[0024] A recess is formed between two adjacent conductive structures, and a recess is also formed between two adjacent microstructures. The recess formed between two adjacent conductive structures is disposed opposite to a microstructure; for example, the orthographic projection of the microstructure on the substrate 10 at least partially overlaps with the orthographic projection of the recess formed between the two adjacent conductive structures on the substrate 10. The recess formed between two adjacent microstructures is disposed opposite to a conductive structure; for example, the orthographic projection of the conductive structure on the substrate 10 at least partially overlaps with the orthographic projection of the recess formed between the two adjacent microstructures on the substrate 10.

[0025] In embodiments of this invention, each conductive structure 21 includes a first conductive portion 211 and a second conductive portion 212 arranged along a first direction X. Understandably, in the first conductive layer 20, a plurality of first conductive portions 211 and a plurality of second conductive portions 212 are arranged alternately along the first direction X. For two adjacent conductive structures 21, the second conductive portion 212 of the conductive structure 21 is close to the first conductive portion 211 in the adjacent conductive structure 21 and forms a first recess C1. Alternatively, the first conductive portion 211 of the conductive structure 21 is close to the second conductive portion 212 in the adjacent conductive structure 21 and forms a first recess C1.

[0026] In embodiments of this invention, the substrate 10 provides mechanical support for the sensor 100 while maintaining its flexibility. For example, the substrate 10 can be a flexible insulating material, such as polyethylene terephthalate (PET) film or polyimide (PI) film. The thickness of the substrate 10 can be approximately 50 μm to 100 μm. Within this thickness range, the substrate 10 can provide sufficient structural rigidity to prevent excessive wrinkling or twisting of the sensor during assembly and use, thereby ensuring that the first conductive layer 20, resistive layer 30, fixing layer 40, and contact layer 50 do not shift or break. The substrate 10 maintains flexibility at this thickness to adapt to complex fitting scenarios such as curved surfaces and wearable devices, maintaining the sensor's thinness and lightness, and improving wearing comfort and spatial adaptability.

[0027] In an embodiment of this invention, a fixing layer 40 covers the resistive layer 30, and the fixing layer 40 is used to fix the contact layer 50 and the resistive layer 30. For example, the fixing layer 40 can be optically clear adhesive (OCA).

[0028] In an embodiment of this invention, the contact layer 50 is configured to deform under the action of an external force, thereby transmitting the external force to multiple microstructures 31 of the resistive layer 30. The contact layer 50 transmits the received external force to the multiple microstructures 31, which, based on the deformation of the contact layer 50, also undergo corresponding deformation, thus transmitting the external force to the resistive layer 30. This allows the microstructures 31 to sense external pressure. The microstructures 31 in the resistive layer 30 can detect external pressure based on the change in resistance caused by pressure, which in turn causes a change in current in the circuit, thereby realizing the sensing process of converting pressure into an electrical signal.

[0029] In embodiments of this invention, the surface of the contact layer 50 furthest from the fixing layer 40 is used to receive external pressure and transmit the received external pressure to the fixing layer 40 and the resistive layer 30. The contact layer 50 may include a silicone matrix and a wear-resistant filler, such as silica microspheres or polyurethane particles. The surface of the contact layer 50 furthest from the fixing layer 40 can simulate the feel of skin to provide a coefficient of friction and softness similar to human skin. As the force transmission medium of the sensor 100, the contact layer 50 protects the internal structure of the sensor 100 and provides waterproof and dustproof functionality.

[0030] In this embodiment of the invention, the resistance change in the sensing circuit is generated based on the external pressure received by the contact layer 50. The external pressure causes the contact layer 50 to deform, which in turn causes the microstructure 31 to deform. The deformation of the microstructure 31 is related to the magnitude of the external pressure, thus the microstructure 31 converts the external pressure value into a deformation. The first conductive layer 20 can be a sensor electrode for collecting electrical signals. The deformation of the microstructure 31 can be converted into a resistance change in the sensing circuit, allowing the resistive layer 30 and the first conductive layer 20 to sense the pressure value based on the current change in the sensing circuit.

[0031] The deformation of microstructure 31 toward the first conductive portion 211 and the deformation of microstructure 31 toward the second conductive portion 212 are related to the direction of application of external pressure. Therefore, microstructure 31 converts the direction of application of external pressure into the difference between the deformation toward the first conductive portion 211 and the deformation toward the second conductive portion 212. The difference in deformation of microstructure 31 can be converted into a difference in the amount of resistance change in the sensing circuit, which allows the resistive layer 30 and the first conductive layer 20 to sense the direction of application of external pressure based on the difference in the amount of current change in the sensing circuit.

[0032] In embodiments of this invention, under the action of external force, the microstructure 31 may be in contact with the first conductive layer 20 or may not be in contact. Under the action of external force, the microstructure 31 may gradually move closer to the first conductive layer 20 and fill the first recess C1. Under the continuous action of external force, the microstructure 31 may come into contact with the first conductive portion 211 and the second conductive portion 212, and the microstructure 31 is squeezed in the first recess C1, deforming relative to the first conductive portion 211 and the second conductive portion 212.

[0033] When the external force acts in the direction normal to the conductive structure 21, the deformation of the microstructure 31 relative to the first conductive portion 211 and the second conductive portion 212 can be the same. When the external force does not act in the direction normal to the conductive structure 21, the deformation of the microstructure 31 relative to the first conductive portion 211 and the second conductive portion 212 will be different. When the deformation of the microstructure 31 relative to the first conductive portion 211 and the second conductive portion 212 is different, the degree of contact between the microstructure 31 and the first conductive portion 211 and the second conductive portion 212 will also be different.

[0034] When the microstructure 31 undergoes different deformations relative to the first conductive portion 211 and the second conductive portion 212, or when the degree of contact between the microstructure 31 and the first conductive portion 211 and the second conductive portion 212 differs, the resistance distribution of the portion of the microstructure 31 closer to the first conductive portion 211 differs from the resistance distribution of the portion of the microstructure 31 closer to the second conductive portion 212. Therefore, the electrical signal transmitted by the microstructure 31 to the first conductive portion 211 differs from the electrical signal transmitted by the microstructure 31 to the second conductive portion 212.

[0035] Based on the electrical signal transmitted by the first conductive part 211 and the electrical signal transmitted by the second conductive part 212, the magnitude of the external force applied to the sensor 100 can be identified. Based on the difference between the electrical signal transmitted by the first conductive part 211 and the electrical signal transmitted by the second conductive part 212, the direction of the external force applied to the sensor 100 can be identified.

[0036] In embodiments of this invention, the contact between the multiple microstructures 31 of the resistive layer 30 and the multiple conductive structures 21 of the first conductive layer 20 to transmit electrical signals enriches the contact states between the microstructures 31 and the conductive structures 21, increases the deformation degree of the microstructures 31, and thus improves the sensing sensitivity. Furthermore, the difference between the electrical signals transmitted by the first conductive part 211 and the second conductive part 212 is used to identify the direction of external pressure application, improving the detection capability of the sensor 100 and enriching its sensing capabilities.

[0037] Combination Figure 2A and Figure 2B The substrate 10, the first conductive layer 20, the resistive layer 30 and the fixing layer 40 are schematically illustrated. Figure 2A A partial structural schematic diagram of a sensor according to an embodiment of the present invention is shown. Figure 2B A schematic diagram of the conductive structure and microstructure according to an embodiment of the present invention is shown.

[0038] like Figure 2A As shown, the microstructure 31 includes a first bottom surface 311, a second bottom surface 312, a first side surface 313, and a second side surface 314.

[0039] In an embodiment of this invention, the first bottom surface 311 is close to the fixing layer 40. The second bottom surface 312 is close to the first conductive layer 20. The first bottom surface 311 is in contact with the fixing layer 40. Under the action of an external force, the fixing layer 40 moves closer to the first conductive layer 20, and the fixing layer 40 drives the microstructure 31 to move closer to the first conductive layer 20.

[0040] Without external force, the second bottom surface 312 may or may not contact the conductive structure 21. The second bottom surface 312 is configured to contact the first conductive layer 20 and deform under external force. Under the action of external force, the microstructure 31 moves towards the conductive structure 21. When the second bottom surface 312 contacts the conductive structure 21, the microstructure 31 deforms, and the shape and area of ​​the second bottom surface 312 change accordingly.

[0041] In this embodiment of the invention, the area of ​​the first bottom surface 311 is larger than the area of ​​the second bottom surface 312. For example, the microstructure 31 can be an inverted cone, an inverted pyramid, an inverted frustum, an inverted truncated cone, an inverted truncated prism, an inverted hemisphere, etc. For example, when the microstructure 31 is an inverted cone or an inverted pyramid, the second bottom surface 312 can be considered as a point. When the microstructure 31 is an inverted hemisphere, the second bottom surface 312 can be considered as a point or a curved surface.

[0042] When the second bottom surface 312 first contacts the conductive structure 21, its area remains constant. Under continuous external force, the conductive structure 21 can compress the microstructure 31, causing deformation of the second bottom surface 312 and increasing its area. Based on this change in the area of ​​the second bottom surface 312, the contact area between the microstructure 31 and the conductive structure 21 also changes. In this case, the efficiency of the microstructure 31 in transmitting electrical signals to the conductive structure 21 also changes.

[0043] The second bottom surface 312 can have a small area. Under the action of external pressure, the area of ​​the second bottom surface 312 can change significantly relative to its original area. This can improve the ability of the microstructure 31 to transmit electrical signals to the conductive structure 21, thereby improving the sensitivity of the sensor 100.

[0044] In this embodiment of the invention, the area of ​​the second bottom surface 312 can be much smaller than the area of ​​the first bottom surface 311. For example, the microstructure 31 is an inverted cone or an inverted pyramid, and the second bottom surface 312 is a point. Under external pressure, the contact between the second bottom surface 312 and the conductive structure 21 can change from point contact to surface contact. The change in the contact area between the second bottom surface 312 and the conductive structure 21 is relatively large, achieving a non-linear abrupt change in the area of ​​the second bottom surface 312 under minute deformation, thereby improving the sensitivity of the sensor 100.

[0045] In this embodiment of the invention, the first side surface 313 is close to the first conductive portion 211, and the first side surface 313 is configured to contact the first conductive portion 211 and deform under the action of an external force. The second side surface 314 is close to the second conductive portion 212. The second side surface 314 is configured to contact the second conductive portion 212 and deform under the action of an external force.

[0046] Under the action of external force, the microstructure 31 moves towards the first recess C1 and fills into it. The microstructure 31 comes into contact with the first conductive portion 211 and the second conductive portion 212, and is compressed by them, resulting in deformation. In this situation, the first side surface 313 comes into contact with the first conductive portion 211, and its shape and area change under the action of the first conductive portion 211. The second side surface 314 comes into contact with the second conductive portion 212, and its shape and area change under the action of the second conductive portion 212.

[0047] Microstructure 31 transmits electrical signals to the first conductive portion 211 through the first side surface 313, and also transmits electrical signals to the second conductive portion 212 through the second side surface 314. Under the action of the applied external pressure, the deformation of the first sub-part near the first conductive portion 211 in microstructure 31 may be different from the deformation of the second sub-part near the second conductive portion 212 in microstructure 31, and the area change of the first side surface 313 may also be different from the area change of the second side surface 314.

[0048] The resistance distribution inside microstructure 31 is affected by external pressure. For example, when microstructure 31 is subjected to external pressure, the internal conductive path increases, and the resistance decreases. The greater the external pressure on microstructure 31, the greater the deformation, the more conductive path is increased, and therefore the lower the resistance.

[0049] When the external pressure is the normal force of the microstructure 31, the external pressure acts on the normal line of the microstructure 31, and the microstructure 31 is subjected to uniform force. Based on the normal force, the deformation of the microstructure 31 can be uniform. For example, the deformation of the first sub-part is the same as that of the second sub-part, and the area change of the first side surface 313 and the area change of the second side surface 314 are also the same. Therefore, the internal resistance of the microstructure 31 changes uniformly, and the efficiency of the microstructure 31 in transmitting electrical signals to the first conductive part 211 and the second conductive part 212 is also the same.

[0050] When the external pressure is a tangential force on the microstructure 31, the microstructure 31 experiences uneven stress, and therefore its deformation is also uneven. For example, the deformation of the first sub-part of the microstructure 31 can be greater than that of the second sub-part, or the deformation of the first sub-part can be less than that of the second sub-part.

[0051] Without external pressure, the resistance distribution of the microstructure 31 is uniform, and the resistance of the first sub-part can be the same as that of the second sub-part. When the deformation of the first sub-part is greater than that of the second sub-part, the resistance of the first sub-part is less than that of the second sub-part. In this case, the current transmitted from the microstructure 31 to the first conductive part 211 via the first side surface 313 can be greater than the current transmitted from the microstructure 31 to the second conductive part 212 via the second side surface 314. When the deformation of the first sub-part is less than that of the second sub-part, the resistance of the first sub-part is greater than that of the second sub-part. In this case, the current transmitted from the microstructure 31 to the first conductive part 211 via the first side surface 313 can be less than the current transmitted from the microstructure 31 to the second conductive part 212 via the second side surface 314.

[0052] By collecting and comparing the current transmitted by the first conductive part 211 and the current transmitted by the second conductive part 212, the resistance of the first sub-part and the resistance of the second sub-part in the microstructure 31 are determined, thereby determining the direction of application of external pressure.

[0053] Combination Figure 2B The principle of electrical signal transmission between microstructure 31 and conductive structure 21 is illustrated schematically.

[0054] like Figure 2B As shown, under the action of normal force, microstructure 31 fills the first recess C1. Microstructure 31 undergoes deformation, wherein the second bottom surface 312, the first side surface 313, and the second side surface 314 all undergo deformation.

[0055] In an embodiment of this utility model, for two adjacent conductive structures 21, the first side surface 313 contacts the second conductive portion 212 of one of the conductive structures 21, and the second side surface 314 contacts the first conductive portion 211 of the other conductive structure 21.

[0056] During the deformation of the microstructure 31, the second bottom surface 312 can be relative to... Figure 2A The area of ​​the second bottom surface 312 shown is increased. The second bottom surface 312 can also contact the first conductive part 211 and the second conductive part 212, and the microstructure 31 can also transmit current to the first conductive part 211 and the second conductive part 212 through the second bottom surface 312.

[0057] Figure 2B The first sub-section and the second sub-section of the microstructure 31 shown have the same deformation, therefore the resistance of the first sub-section and the resistance of the second sub-section are the same, and the area deformation of the first side surface 313 is the same as the area deformation of the second side surface 314. In this case, the current transmitted by the microstructure 31 to the first conductive portion 211 through the first side surface 313 is the same as the current transmitted by the microstructure 31 to the second conductive portion 212 through the second side surface 314.

[0058] In this embodiment of the invention, the microstructure 31 can transmit electrical signals to the conductive structure 21 through the second bottom surface 312, the first side surface 313, and the second side surface 314. Therefore, by using the microstructure 31 to convert pressure into electrical signals, the electrical signal transmission efficiency and sensitivity of the sensor 100 can be improved.

[0059] In embodiments of this invention, the deformation of the first sub-part and the second sub-part of the microstructure 31 differs under the action of tangential force. For example, under the action of external pressure applied along the first direction X (from left to right in the figure), the deformation of the first sub-part near the first conductive part 211 in the microstructure 31 is greater than the deformation of the second sub-part near the second conductive part 212 in the microstructure 31. The area deformation of the first side surface 313 is greater than the area deformation of the second side surface 314. Therefore, the resistance of the first sub-part is less than the resistance of the second sub-part, and the current transmission rate through the first side surface 313 is greater than the current transmission rate through the second side surface 314. Consequently, the current received by the first conductive part 211 is greater than the current received by the second conductive part 212.

[0060] Therefore, based on the difference between the current received by the first conductive part 211 and the current received by the second conductive part 212, the difference between the deformation of the first sub-part and the deformation of the second sub-part can be determined, thereby determining the direction of the external pressure applied.

[0061] For an external pressure applied in any direction, the external pressure can be decomposed into a normal force component and a tangential force component in the plane formed by the first direction X and the direction Z. Since the first conductive part 211 and the second conductive part 212 are arranged alternately along the first direction X, the tangential force applied along the first direction X and the opposite direction X-X can be identified based on the first conductive part 211 and the second conductive part 212.

[0062] In embodiments of this invention, the conductivity of the first conductive portion 211 and the conductivity of the second conductive portion 212 may be different or the same. For example, the first conductive portion 211 and the second conductive portion 212 may both be made of the same conductive material, or they may be made of different conductive materials. For example, the first conductive portion 211 may be made of indium tin oxide (ITO), and the second conductive portion 212 may be made of metallic silver (Ag).

[0063] For example, when the conductivity of the first conductive part 211 and the conductivity of the second conductive part 212 are the same, the direction of application of external pressure can be identified based on the current received by the first conductive part 211 and the current received by the second conductive part 212. For example, when the conductivity of the first conductive part 211 and the conductivity of the second conductive part 212 are different, the difference in conductivity can amplify the difference between the current received by the first conductive part 211 and the current received by the second conductive part 212, thereby allowing for more accurate identification of the direction of application of external pressure.

[0064] Figure 3 A partial structural schematic diagram of a sensor according to another embodiment of the present invention is shown.

[0065] like Figure 3 As shown, the conductive structure 21 further includes a third conductive portion 213 and a fourth conductive portion 214 disposed along the second direction Y. The third conductive portion 213 of the conductive structure 21 and the fourth conductive portion 214 of the adjacent conductive structure along the second direction Y form a second recess C2. The second recess C2 is disposed opposite to the microstructure 31, and the second direction Y intersects the first direction X. For example, the angle between the first direction X and the second direction Y can be 90°, 89°, or 91°, etc.

[0066] In embodiments of this invention, each conductive structure 21 includes a third conductive portion 213 and a fourth conductive portion 214 arranged along the second direction Y. Understandably, in the first conductive layer 20, a plurality of third conductive portions 213 and a plurality of fourth conductive portions 214 are arranged alternately along the second direction Y. For two adjacent conductive structures 21, the fourth conductive portion 214 of the conductive structure 21 is close to the third conductive portion 213 in the adjacent conductive structure 21, forming a second recess C2. Alternatively, the third conductive portion 213 of the conductive structure 21 is close to the fourth conductive portion 214 in the adjacent conductive structure 21, forming a second recess C2.

[0067] The deformation of microstructure 31 toward the third conductive portion 213 and the deformation of microstructure 31 toward the fourth conductive portion 214 are related to the direction of application of external pressure. Therefore, microstructure 31 converts the direction of application of external pressure into the difference between the deformation toward the third conductive portion 213 and the deformation toward the fourth conductive portion 214. The difference in deformation of microstructure 31 can be converted into a difference in the amount of resistance change in the sensing circuit, which allows the resistive layer 30 and the first conductive layer 20 to sense the direction of application of external pressure based on the difference in the amount of current change in the sensing circuit.

[0068] When the external force acts in the direction normal to the conductive structure 21, the deformation of the microstructure 31 relative to the third conductive portion 213 and the fourth conductive portion 214 can be the same. When the external force does not act in the direction normal to the conductive structure 21, the deformation of the microstructure 31 relative to the third conductive portion 213 and the fourth conductive portion 214 will be different. When the deformation of the microstructure 31 relative to the third conductive portion 213 and the fourth conductive portion 214 is different, the degree of contact between the microstructure 31 and the third conductive portion 213 and the fourth conductive portion 214 will also be different.

[0069] When the microstructure 31 undergoes different deformations relative to the third conductive portion 213 and the fourth conductive portion 214, or when the degree of contact between the microstructure 31 and the third conductive portion 213 and the fourth conductive portion 214 differs, the resistance distribution of the third sub-part of the microstructure 31 near the third conductive portion 213 differs from the resistance distribution of the fourth sub-part of the microstructure 31 near the fourth conductive portion 214. Therefore, the electrical signal transmitted by the microstructure 31 to the third conductive portion 213 differs from the electrical signal transmitted by the microstructure 31 to the fourth conductive portion 214.

[0070] Based on the electrical signals transmitted by the third conductive part 213 and the fourth conductive part 214, the magnitude of the external force applied to the sensor 100 can be identified. Based on the difference between the electrical signals transmitted by the third conductive part 213 and the fourth conductive part 214, the direction of the external force applied to the sensor 100 can be identified.

[0071] In an embodiment of this invention, the microstructure 31 includes a third side surface 315 and a fourth side surface 316. The third side surface 315 is located near the third conductive portion 213 and is configured to contact and deform with the third conductive portion 213 under the action of an external force. The fourth side surface 316 is located near the fourth conductive portion 214 and is configured to contact and deform with the fourth conductive portion 214 under the action of an external force.

[0072] Under the action of external force, the microstructure 31 moves towards the second recess C2 and fills into it. The microstructure 31 comes into contact with the third conductive portion 213 and the fourth conductive portion 214, and is compressed by them, resulting in deformation. In this situation, the third side surface 315 comes into contact with the third conductive portion 213, and its shape and area change under the action of the third conductive portion 213. The fourth side surface 316 comes into contact with the fourth conductive portion 214, and its shape and area change under the action of the fourth conductive portion 214.

[0073] Microstructure 31 transmits electrical signals to the third conductive part 213 through the third side surface 315, and also transmits electrical signals to the fourth conductive part 214 through the fourth side surface 316. Under the action of the applied external pressure, the deformation of the third sub-part in microstructure 31 may be different from that of the fourth sub-part in microstructure 31, and the area change of the third side surface 315 may also be different from that of the fourth side surface 316.

[0074] When the external pressure is the normal force of the microstructure 31, the deformation of the third sub-part is the same as that of the fourth sub-part, and the area change of the third side surface 315 is also the same as that of the fourth side surface 316. Therefore, the internal resistance of the microstructure 31 changes uniformly, and the efficiency of the microstructure 31 in transmitting electrical signals to the third conductive part 213 and the fourth conductive part 214 is also the same.

[0075] When the external pressure is the tangential force of the microstructure 31, the deformation of the third sub-part of the microstructure 31 can be greater than that of the fourth sub-part, or the deformation of the third sub-part can be less than that of the fourth sub-part.

[0076] Without external pressure, the resistance distribution of microstructure 31 is uniform, and the resistance of the third sub-section can be the same as that of the fourth sub-section. When the deformation of the third sub-section is greater than that of the fourth sub-section, the resistance of the third sub-section is less than that of the fourth sub-section. In this case, the current transmitted from microstructure 31 to the third conductive part 213 via the third side surface 315 can be greater than the current transmitted from microstructure 31 to the fourth conductive part 214 via the fourth side surface 316. When the deformation of the first sub-section is less than that of the second sub-section, the resistance of the third sub-section is greater than that of the fourth sub-section. In this case, the current transmitted from microstructure 31 to the third conductive part 213 via the third side surface 315 can be less than the current transmitted from microstructure 31 to the fourth conductive part 214 via the fourth side surface 316.

[0077] By collecting and comparing the current transmitted by the third conductive part 213 and the current transmitted by the fourth conductive part 214, the resistance of the third sub-part and the resistance of the fourth sub-part in the microstructure 31 are determined, thereby determining the direction of application of external pressure.

[0078] In this embodiment of the invention, the microstructure 31 can transmit electrical signals to the conductive structure 21 through the third side surface 315 and the fourth side surface 316. Therefore, by using the microstructure 31 to convert pressure into electrical signals, the electrical signal transmission efficiency and sensitivity of the sensor 100 can be improved.

[0079] In embodiments of this invention, the deformation of the third and fourth sub-parts of the microstructure 31 differs under tangential force. For example, under external pressure applied along the second direction Y (from left to right in the figure), the deformation of the third sub-part closer to the third conductive part 213 in the microstructure 31 is greater than the deformation of the fourth sub-part closer to the fourth conductive part 214 in the microstructure 31. The area deformation of the third side surface 315 is greater than the area deformation of the fourth side surface 316. Therefore, the resistance of the third sub-part is less than the resistance of the fourth sub-part, and the current transmission rate through the third side surface 315 is greater than the current transmission rate through the fourth side surface 316. Consequently, the current received by the third conductive part 213 is greater than the current received by the fourth conductive part 214.

[0080] For an external pressure applied in any direction, the external pressure can be decomposed into a normal force component and a tangential force component in the plane formed by the second direction Y and the direction Z. Since the third conductive part 213 and the fourth conductive part 214 are arranged alternately along the second direction Y, the tangential force applied along the second direction Y and the opposite direction Y can be identified based on the third conductive part 213 and the fourth conductive part 214.

[0081] The conductivity of the third conductive part 213 and the fourth conductive part 214 may be different or the same. For example, if the conductivity of the third conductive part 213 and the fourth conductive part 214 are the same, the direction of application of external pressure can be identified based on the current received by the third conductive part 213 and the current received by the fourth conductive part 214. For example, if the conductivity of the third conductive part 213 and the fourth conductive part 214 are different, the difference in conductivity can amplify the difference between the current received by the third conductive part 213 and the current received by the fourth conductive part 214, thereby allowing for more accurate identification of the direction of application of external pressure.

[0082] Figure 4 A schematic diagram of the conductive structure and microstructure according to another embodiment of the present invention is shown.

[0083] Multiple conductive structures in the sensor can be arranged in an array along the first direction X and the second direction Y, and multiple microstructures can also be arranged in an array along the first direction X and the second direction Y. Figure 4 This is a top view of part of the conductive structure and part of the microstructure.

[0084] like Figure 4 As shown, the conductive structure includes conductive structures 21a, 21b, 21c, 21d, 21e, and 21f, and the microstructure includes microstructures 31a and 31b.

[0085] In an embodiment of this invention, conductive structure 21b and conductive structure 21c are two adjacent conductive structures arranged along a first direction X, wherein the second conductive portion 212b of conductive structure 21b and the first conductive portion 211c of conductive structure 21c are arranged along the first direction X. Conductive structure 21a and conductive structure 21d are two adjacent conductive structures arranged along a second direction Y, wherein the fourth conductive portion 214a of conductive structure 21a and the third conductive portion 213d of conductive structure 21d are arranged along the second direction Y. The first conductive portion 211c of conductive structure 21c is close to the first side surface 313b of microstructure 31b, the second conductive portion 212b of conductive structure 21b is close to the second side surface 314b of microstructure 31b, the third conductive portion 213d of conductive structure 21d is close to the third side surface 315b of microstructure 31b, and the fourth conductive portion 214a of conductive structure 21a is close to the fourth side surface 316b of microstructure 31b. The first recess formed by the second conductive portion 212b of conductive structure 21b and the first conductive portion 211c of conductive structure 21c is the same recess formed by the fourth conductive portion 214a of conductive structure 21a and the third conductive portion 213d of conductive structure 21d. Within this recess, the external pressure applied to the microstructure 31b is identified based on the first conductive portion 211c of conductive structure 21c, the second conductive portion 212b of conductive structure 21b, the third conductive portion 213d of conductive structure 21d, and the fourth conductive portion 214a of conductive structure 21a.

[0086] For example, based on the electrical signals received by the first conductive portion 211c of conductive structure 21c, the second conductive portion 212b of conductive structure 21b, the third conductive portion 213d of conductive structure 21d, and the fourth conductive portion 214a of conductive structure 21a, the magnitude of the external pressure applied to the microstructure 31b can be identified. For any external pressure applied to the microstructure 31b, the external pressure can be decomposed into a normal force, a first tangential force component along the first direction X, and a second tangential force component along the second direction Y. Therefore, based on the electrical signals received by the first conductive portion 211c of conductive structure 21c and the second conductive portion 212b of conductive structure 21b, the direction of the first tangential force component can be identified, and based on the electrical signals received by the third conductive portion 213d of conductive structure 21d and the fourth conductive portion 214a of conductive structure 21a, the direction of the applied external pressure can be identified. By combining the magnitude and direction of the first tangential force component, the magnitude and direction of the second tangential force component, and the magnitude of the normal force component, the direction of application of the external pressure can be determined.

[0087] In an embodiment of this invention, conductive structures 21d and 21e are two adjacent conductive structures arranged along a first direction X, wherein the second conductive portion 212d of conductive structure 21d and the first conductive portion 211e of conductive structure 21e are arranged along the first direction X. Conductive structures 21c and 21f are two adjacent conductive structures arranged along a second direction Y, wherein the fourth conductive portion 214c of conductive structure 21c and the third conductive portion 213f of conductive structure 21f are arranged along the second direction Y. The first conductive portion 211e of conductive structure 21e is close to the first side surface 313a of microstructure 31a, the second conductive portion 212d of conductive structure 21d is close to the second side surface 314a of microstructure 31a, the third conductive portion 213f of conductive structure 21f is close to the third side surface 315a of microstructure 31a, and the fourth conductive portion 214c of conductive structure 21c is close to the fourth side surface 316a of microstructure 31a. The first recess formed by the second conductive portion 212d of conductive structure 21d and the first conductive portion 211e of conductive structure 21e, and the second recess formed by the fourth conductive portion 214c of conductive structure 21c and the third conductive portion 213f of conductive structure 21f, are the same recess. Within this recess, the external pressure applied to the microstructure 31a is identified based on the first conductive portion 211e of conductive structure 21e, the second conductive portion 212d of conductive structure 21d, the third conductive portion 213f of conductive structure 21f, and the fourth conductive portion 214c of conductive structure 21c.

[0088] For example, based on the electrical signals received by the first conductive portion 211e of conductive structure 21e, the second conductive portion 212d of conductive structure 21d, the third conductive portion 213f of conductive structure 21f, and the fourth conductive portion 214c of conductive structure 21c, the magnitude of the external pressure applied to the microstructure 31a can be identified. For any external pressure applied to the microstructure 31a, the external pressure can be decomposed into a normal force, a first tangential force component along the first direction X, and a second tangential force component along the second direction Y. Therefore, based on the electrical signals received by the first conductive portion 211e of conductive structure 21e and the second conductive portion 212d of conductive structure 21d, the direction of the first tangential force component can be identified, and based on the electrical signals received by the third conductive portion 213f of conductive structure 21f and the fourth conductive portion 214c of conductive structure 21c, the direction of the applied external pressure can be determined. By combining the magnitude and direction of the first tangential force component, the magnitude and direction of the second tangential force component, and the magnitude of the normal force component, the direction of application of the external pressure can be determined.

[0089] The structural relationships of the first, second, third, and fourth sub-parts in the microstructure can be referenced from the structural relationships of the first, second, third, and fourth conductive parts in the conductive structure.

[0090] Figure 5 A schematic diagram of the structure of a sensor according to another embodiment of the present invention is shown.

[0091] The sensor 100 also includes a second conductive layer 60. The second conductive layer 60 is disposed between the substrate 10 and the first conductive layer 20. A plurality of conductive structures 21 are disposed on the second conductive layer 60, and there is a gap between the orthographic projection of two adjacent conductive structures 21 on the second conductive layer 60, such that the microstructure 31 is configured to contact the second conductive layer 60 under the action of an external force.

[0092] In an embodiment of this utility model, under the action of external force, the microstructure 31 fills into the first recess C1, and the second bottom surface 312 of the microstructure 31 can contact the second conductive layer 60 and transmit electrical signals to the second conductive layer 60 through the second bottom surface 312.

[0093] The microstructure 31 contacts the second conductive layer 60 through the first recess C1, which ensures that the electrical signal inside the microstructure 31 can be transmitted to the second conductive layer 60, so that the second conductive layer 60 can also accurately sense the current change based on the external pressure.

[0094] In an embodiment of this utility model, when the microstructure 31 is filled into the first recess C1 by external force, the second bottom surface 312, the first side surface 313, the second side surface 314, the third side surface 315 and the fourth side surface 316 of the microstructure 31 can all be in contact with the conductive material and transmit electrical signals, which can improve the sensitivity of the sensor 100.

[0095] Furthermore, the conductivity of the second conductive layer 60 can be different from that of the conductive structure 21. For example, the second conductive layer 60 can be made of metallic copper. Since the conductivity of the first conductive part 211, the second conductive part 212, the third conductive part 213, the fourth conductive part 214, and the second conductive layer 60 are not exactly the same, this can amplify the differences between the electrical signals received by the first conductive part 211, the second conductive part 212, the third conductive part 213, the fourth conductive part 214, and the second conductive layer 60, thereby improving the sensitivity and accuracy of the sensor 100.

[0096] Figure 6 A schematic diagram of the structure of a sensor according to another embodiment of the present invention is shown.

[0097] The sensor 100 also includes a third conductive layer 70. The third conductive layer 70 is disposed between the resistive layer 30 and the fixing layer 40 and is in contact with a plurality of microstructures 31.

[0098] In an embodiment of this invention, the third conductive layer 70 may be made of copper. The first conductive layer 20, the second conductive layer 60, the resistive layer 30, and the third conductive layer 70 form a three-layer sandwich-type electrical signal transmission mode. The resistive layer 30 is sandwiched between the conductive layers, which can improve the stability of the resistive layer 30.

[0099] Under the action of external force, the third conductive layer 70 moves closer to the first conductive layer 20 and the second conductive layer 60. The third conductive layer 70 transmits electrical signals to the first conductive layer 20 and the second conductive layer 60 through the resistive layer 30, which can improve the uniformity and stability of electrical signal transmission and enhance sensitivity.

[0100] In embodiments of this invention, the radial dimensions of the plurality of microstructures 31 are not entirely identical. The radial dimension is the length along a first direction X or a second direction Y. For example, the dimensions of the plurality of microstructures 31 along the first direction X may not be entirely identical, and the dimensions of the plurality of microstructures 31 along the second direction Y may also not be entirely identical.

[0101] By using multiple microstructures 31 with different radial dimensions to identify external pressure, the sensor 100 can be enhanced to identify external pressures of different magnitudes, thereby improving its sensitivity.

[0102] In embodiments of this invention, the plurality of microstructures 31 include a plurality of first microstructures, a plurality of second microstructures, and a plurality of third microstructures. The plurality of first microstructures, second microstructures, and third microstructures are randomly distributed or distributed by region. The radial dimensions of the first microstructures, second microstructures, and third microstructures are different, while the axial heights of the first microstructures, second microstructures, and third microstructures are the same.

[0103] The multiple microstructures 31 may include three types of microstructures, which have the same axial height but different radial dimensions.

[0104] When the three types of microstructures are distributed regionally, multiple first, second, and third microstructures can form three recognition zones to identify external pressures of different ranges. When the three types of microstructures are randomly distributed, multiple first, second, and third microstructures can be randomly and alternately distributed, allowing first, second, and third microstructures of different sizes to assist each other in identifying external pressures, thereby improving the sensitivity and accuracy of the sensor 100.

[0105] In embodiments of this invention, the radial dimensions of the first microstructure, the second microstructure, and the third microstructure can increase sequentially. For example, the radial dimension of the first bottom surface of the first microstructure is 5 μm to 10 μm, and the radial dimension of the second bottom surface of the first microstructure is 20 μm to 30 μm. The radial dimension of the first bottom surface of the second microstructure is 20 μm to 50 μm, and the radial dimension of the second bottom surface of the second microstructure is 60 μm to 80 μm. The radial dimension of the first bottom surface of the third microstructure is 100 μm to 200 μm, and the radial dimension of the second bottom surface of the third microstructure is 300 μm to 400 μm.

[0106] For example, when the microstructure 31 is a frustum, the radial dimension of the first bottom surface is the diameter of the first bottom surface, and the radial dimension of the second bottom surface is the diameter of the second bottom surface.

[0107] The first microstructure has a small radial dimension, and multiple first microstructures can form a high-sensitivity zone, which can be used to sense extremely weak touches and identify small external pressures. The second microstructure has a moderate radial dimension, and multiple second microstructures can form a medium-range zone, which can be used to identify the pressure generated by regular pressing. The third microstructure has a large radial dimension, and multiple third microstructures can form a high-load zone, which can be used to withstand grasping actions with greater pressure.

[0108] In embodiments of this invention, the height of the plurality of microstructures 31 is 0.2 μm to 0.5 μm. At this height, the thickness of the resistive layer 30 formed by the plurality of microstructures 31 is small, which can improve the thinness and lightness of the sensor and enhance its flexibility. Furthermore, at this height, the microstructures 31 can ensure the generation of deformation, thus ensuring the sensitivity of the sensor.

[0109] Figure 7 A schematic diagram of the structure of a sensor according to another embodiment of the present invention is shown.

[0110] like Figure 7 As shown, the contact layer 50 includes a first contact portion 51, a second contact portion 52, and a third contact portion 53. The first contact portion 51, the second contact portion 52, and the third contact portion 53 are sequentially connected to form a third recess C3. The resistive layer 30 and the fixing layer 40 are disposed in the third recess C3, and the second contact portion 52, the fixing layer 40, and the resistive layer 30 are sequentially stacked.

[0111] In embodiments of this invention, the contact layer 50 may at least partially surround the fixing layer 40 and the resistive layer 30. When pressure is applied to the fixing layer 40 and the resistive layer 30, the fixing layer 40 and the resistive layer 30 deform within the third recess C3 formed by the contact layer 50, thereby improving the stability of the sensor.

[0112] The hardness of the contact layer 50 can be adjusted according to application requirements; for example, the hardness range can be Shore A 10 to 60. The thickness of the contact layer 50 can be approximately 0.5 mm to 2 mm. Within this thickness and hardness range, the contact layer 50 can provide a comfortable and realistic contact experience, and also helps to disperse external pressure, protecting the structure of the resistive layer 30 and the fixing layer 40.

[0113] This utility model also provides a method for preparing the sensor 100. Figure 8 A schematic diagram illustrating the fabrication of a sensor according to an embodiment of the present invention is shown.

[0114] The preparation method includes steps S1 to S6.

[0115] Step S1, substrate pretreatment. Select a flexible substrate 10 and perform plasma cleaning to increase the surface energy of the substrate 10 and ensure the adhesion of subsequent coatings.

[0116] Step S2: Prepare the first conductive layer 20. Apply conductive layer material to the substrate 10 to form the first conductive layer 20.

[0117] Step S3, Mask Positioning. A photolithographic mask with a specific microporous structure is placed on the first conductive layer 20.

[0118] like Figure 8 As shown, the hole shape of the photolithography mask is designed as an inverted triangle or an opening with a specific angle to control the cross-sectional shape of the spray deposition.

[0119] Step S4, electrostatic spraying. Electrostatic spraying is performed using a conductive polymer slurry, for example, a mixture of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) or carbon nanotubes / silver nanowires.

[0120] The process parameters for electrostatic spraying include the spray gun voltage (-10kV to -30kV) and the nozzle movement speed. Utilizing the electrostatic field effect, the conductive polymer slurry is preferentially deposited within the apertures of the photolithographic mask, and under the combined influence of gravity and the electric field, forms an inverted triangular stacking shape that is wider at the top and narrower at the bottom. By controlling the spraying time and slurry viscosity, the radial width ratio of the first and second bottom surfaces of the microstructure 31 is precisely adjusted.

[0121] Step S5, curing and molding. Place the sprayed substrate 10 into an oven and cure it at 80℃-120℃ for 30 minutes to set the resistive layer 30 and form a stable microstructure with an inverted triangular structure.

[0122] Step S6, Electrode Printing and Encapsulation. Remove the photomask, then cover with the fixing layer 40 and contact layer 50, and encapsulate.

[0123] Figure 9 A schematic diagram of the structure of an electronic device according to an embodiment of the present invention is shown.

[0124] like Figure 9 As shown, the electronic device 200 includes a sensor 100.

[0125] In the embodiments of this utility model, the working process and structure of the sensor 100 can be as described above. For the sake of brevity, similar parts will not be repeated.

[0126] In embodiments of this invention, the electronic device 200 can be electronic skin. This electronic skin can perform functions such as pressure detection, human skin sweat detection, and human skin temperature detection.

[0127] Optionally, the electronic skin described in this disclosure may include a plurality of sensors 100 arranged in an array, or may include a plurality of sensors 100 arranged in any manner.

[0128] The block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to various embodiments of the present invention. In this regard, each block in the flowchart or block diagram may represent a module, segment, or portion of code containing one or more executable instructions for implementing the specified logical function. It should also be noted that in some alternative implementations, the functions indicated in the blocks may occur in a different order than those indicated in the drawings. For example, two consecutively indicated blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in the block diagram or flowchart, and combinations of blocks in the block diagram or flowchart, can be implemented using a dedicated hardware-based system that performs the specified function or operation, or using a combination of dedicated hardware and computer instructions.

[0129] Those skilled in the art will understand that the features described in the various embodiments of this utility model can be combined and / or combined in various ways, even if such combinations or combinations are not explicitly described in this utility model. In particular, the features described in the various embodiments of this utility model can be combined and / or combined in various ways without departing from the spirit and teachings of this utility model. All such combinations and / or combinations fall within the scope of this utility model.

[0130] The embodiments of this utility model have been described above. However, these embodiments are merely illustrative and not intended to limit the scope of this utility model. Although various embodiments have been described above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination. Without departing from the scope of this utility model, those skilled in the art can make various substitutions and modifications, all of which should fall within the scope of this utility model.

Claims

1. A sensor, characterized by include: base(10); A first conductive layer (20) is disposed on the substrate (10). The first conductive layer (20) includes a plurality of conductive structures (21). Each conductive structure (21) includes a first conductive portion (211) and a second conductive portion (212) arranged along a first direction. The first conductive portion (211) of the conductive structure (21) and the second conductive portion (212) of the conductive structure adjacent to it along the first direction form a first recess (C1). A resistive layer (30) is disposed on the first conductive layer (20). The resistive layer (30) includes a plurality of microstructures (31). The microstructures (31) are disposed opposite to the first recess (C1). The microstructures (31) are configured to convert the received external force into an electrical signal and transmit the electrical signal to the first conductive part (211) and the second conductive part (212). A fixing layer (40) is disposed on the resistive layer (30); and A contact layer (50) is disposed on the fixed layer (40), and the contact layer (50) is configured to deform under the action of an external force to transmit the external force to the plurality of microstructures (31).

2. The sensor of claim 1, wherein, The microstructure (31) includes: The first bottom surface (311) is adjacent to the fixing layer (40); and The second bottom surface (312) is close to the first conductive layer (20). The second bottom surface (312) is configured to contact the first conductive layer (20) and deform under the action of external force. The area of ​​the first bottom surface (311) is greater than the area of ​​the second bottom surface (312).

3. The sensor of claim 1, wherein, The microstructure (31) includes: The first side surface (313), close to the first conductive part (211), is configured to contact the first conductive part (211) and deform under the action of an external force; and The second side surface (314), close to the second conductive part (212), is configured to contact the second conductive part (212) and deform under the action of an external force.

4. The sensor of claim 1, wherein, The sensor also includes: A second conductive layer (60) is disposed between the substrate (10) and the first conductive layer (20); The plurality of conductive structures (21) are disposed on the second conductive layer (60), and there is a gap between the orthographic projection of two adjacent conductive structures (21) on the second conductive layer (60), so that the microstructure (31) is configured to contact the second conductive layer (60) under the action of the external force.

5. The sensor of claim 1, wherein, The conductive structure (21) further includes a third conductive part (213) and a fourth conductive part (214) disposed along the second direction. The third conductive portion (213) of the conductive structure (21) forms a second recess (C2) with the fourth conductive portion (214) of the conductive structure adjacent to the second direction. The second recess (C2) is disposed opposite to the microstructure (31), and the second direction intersects the first direction.

6. The sensor of claim 5, wherein, The microstructure (31) includes: The third side surface (315), close to the third conductive part (213), is configured to contact the third conductive part (213) and deform under the action of an external force; and The fourth side surface (316), close to the fourth conductive part (214), is configured to contact the fourth conductive part (214) and deform under the action of an external force.

7. The sensor of claim 1, wherein, The sensor also includes: The third conductive layer (70) is disposed between the resistive layer (30) and the fixing layer (40) and is in contact with the plurality of microstructures (31).

8. The sensor of claim 1, wherein, The radial dimensions of the multiple microstructures (31) are not exactly the same.

9. The sensor of claim 1, wherein, The plurality of microstructures (31) include a plurality of first microstructures, a plurality of second microstructures and a plurality of third microstructures, wherein the plurality of first microstructures, the plurality of second microstructures and the plurality of third microstructures are randomly distributed or distributed by region; The radial dimensions of the first microstructure, the second microstructure, and the third microstructure are different, while the axial heights of the first microstructure, the second microstructure, and the third microstructure are the same.

10. The sensor according to claim 9, characterized in that, The radial dimension of the first bottom surface of the first microstructure is 5μm~10μm, and the radial dimension of the second bottom surface of the first microstructure is 20μm~30μm; The radial dimension of the first bottom surface of the second microstructure is 20μm~50μm, and the radial dimension of the second bottom surface of the second microstructure is 60μm~80μm; as well as The radial dimension of the first bottom surface of the third microstructure is 100μm~200μm, and the radial dimension of the second bottom surface of the third microstructure is 300μm~400μm.

11. The sensor of claim 1, wherein, The contact layer (50) includes a first contact portion (51), a second contact portion (52) and a third contact portion (53); The first contact portion (51), the second contact portion (52) and the third contact portion (53) are connected in sequence to form a third recess (C3), the resistive layer (30) and the fixing layer (40) are disposed in the third recess (C3), and the second contact portion (52), the fixing layer (40) and the resistive layer (30) are stacked in sequence.

12. The sensor according to claim 1, characterized in that, The conductivity of the first conductive part (211) and the conductivity of the second conductive part (212) are either different or the same.

13. The sensor according to claim 1, characterized in that, The thickness of the substrate (10) is 50 μm to 100 μm; and The height of the plurality of microstructures (31) is 0.2 μm to 0.5 μm.

14. An electronic device, comprising: include: The sensor according to any one of claims 1 to 13.

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