Optoelectronic device defect detection device

Abstract

This application discloses a defect detection device for optoelectronic devices, including a support structure, field plate electrodes, a controller, and an image acquisition mechanism. The support structure supports the optoelectronic device under test. The field plate electrodes include multiple electric field emitting units arranged in an array along at least one direction. The controller is configured to drive the electric field emitting units to generate an electric field to form an excitation field on the optoelectronic device. The image acquisition mechanism is configured to capture the light signal emitted by the optoelectronic device excited by the excitation field. This device adopts a structure in which the electric field is excited by the array of electric field emitting units, forming an excitation field on the optoelectronic device under test in a non-contact manner, causing the light-emitting units to emit light. This avoids contamination or scratches on the surface of the optoelectronic device, improving the detection effect. Moreover, compared with probe measurement, this detection method significantly improves detection efficiency and can well match the large-scale, fast-paced production needs of display panels.

Description

Technical Field

[0001] This application relates to the field of optoelectronic device testing, and in particular to an optoelectronic device defect detection device. Background Technology

[0002] In the process of manufacturing / fabrication of optoelectronic devices, it is necessary to conduct various optical and other types of equipment tests. The tests are mainly divided into two types: contact and non-contact.

[0003] Contact testing requires the use of physical probes to contact the electrodes of the light-emitting unit point by point or area by area to apply an excitation signal. The drawbacks of this method become increasingly apparent as the size of the light-emitting unit shrinks. Physical contact can easily cause irreversible scratches, electrostatic breakdown, or contamination to the fragile micron-sized light-emitting unit, and the testing process actually reduces the yield. Summary of the Invention

[0004] To address the problems in the aforementioned commonly used technologies, the purpose of this application is to provide a non-contact method for detecting defects in optoelectronic devices that avoids physical damage.

[0005] To achieve the above-mentioned objectives, one embodiment of this application provides a defect detection device for optoelectronic devices, characterized in that it includes: A support structure configured to support the optoelectronic device under test; The field plate electrode includes a plurality of electric field emitting units arranged in an array along at least one direction; A controller, electrically connected to the field plate electrodes and configured to drive the electric field emitting unit to generate an electric field to form an excitation field on the optoelectronic device; An image acquisition mechanism is configured to capture the light signal emitted by the optoelectronic device by the excitation field.

[0006] As a further improvement of this application, the optoelectronic device defect detection device further includes a micro resonant coil array, which includes multiple coils. The controller is electrically connected to the micro resonant coil array and configured to drive the multiple coils to generate a magnetic field to form an excitation field on the optoelectronic device.

[0007] As a further improvement of this application, the plurality of coils spatially correspond to the gap region between the plurality of electric field emitting units; In the projection perpendicular to the display surface of the optoelectronic device, along at least one direction, a coil is provided between any two adjacent electric field emitting units, forming an arrangement in which the electric field emitting units and the coils are arranged alternately.

[0008] As a further improvement of this application, in the projection perpendicular to the display surface of the optoelectronic device, the electric field emitting unit and the coil are arranged alternately along the first direction and the second direction to form a two-dimensional alternating array structure, wherein the first direction is perpendicular to the second direction.

[0009] As a further improvement of this application, the controller is further configured to sequentially drive different combinations of the electric field emitting unit and the coil in a partitioned scanning manner, so as to form the excitation field in a non-mechanical stepping manner on different regions of the optoelectronic device.

[0010] As a further improvement to this application, in the direction perpendicular to the display surface of the optoelectronic device, The field plate electrode is disposed between the micro resonant coil array and the optoelectronic device; or... The micro resonant coil array is disposed between the field plate electrode and the optoelectronic device; or... The optoelectronic device is disposed between the field plate electrode and the micro resonant coil array.

[0011] As a further improvement of this application, the optoelectronic device defect detection device further includes a magnetic flux enhancement layer, which is disposed on the side of the micro resonant coil array near the optoelectronic device, for collecting and guiding the magnetic field generated by the coil.

[0012] As a further improvement of this application, the optoelectronic device defect detection device further includes an energy recovery circuit, which includes an energy storage capacitor and a diode connected in series between the coil and the energy storage capacitor. The conduction direction of the diode is configured to face the energy storage capacitor to form a charging path for conducting the current generated when the controller stops driving the coil.

[0013] As a further improvement to this application, the optoelectronic device defect detection device further includes additional modules selected from at least one of the following or any combination thereof, all of which are communicatively connected to the controller: A tilt angle monitoring module monitors the tilt angle of the optoelectronic device; Temperature monitoring module, for monitoring the temperature of the optoelectronic device; A surface monitoring system monitors the surface curvature of the optoelectronic device.

[0014] As a further improvement to this application, the optoelectronic device defect detection device further includes additional modules selected from at least one of the following or any combination thereof, all of which are communicatively connected to the controller: The safety maintenance module is configured to gradually increase the driving voltage of the field plate electrode to the target detection voltage by step-by-step voltage increase; The parameter calculation module is configured to calculate and generate the driving parameters required by the controller based on the physical characteristic parameters of the optoelectronic device. A spacing control module is configured to control the spacing between the optoelectronic device and the field plate electrode; A vacuum generating module includes a vacuum chamber and a vacuum generating unit. The support structure and the field plate electrode are both disposed in the vacuum chamber, and the vacuum generating unit controls the vacuum level of the vacuum chamber. A wavelength control module is disposed in the optical path between the optoelectronic device and the image acquisition mechanism to selectively allow light signals of specific wavelengths to pass through; The joint detection module is configured to perform bidirectional communication of detection data with external devices.

[0015] Compared with commonly used technologies, this application has the following advantages: The optoelectronic device defect detection device adopts a structure in which an electric field is excited by an array of electric field emission units, forming an excitation field on the optoelectronic device under test in a non-contact manner, so as to make the light-emitting unit emit light, avoiding contamination or scratches on the surface of the optoelectronic device, improving the detection effect. Moreover, compared with probe measurement one by one, this detection method has significantly improved detection efficiency and can well match the large-scale and fast-paced production needs of display panels. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of the first embodiment of the optoelectronic device defect detection device of this application; Figure 2 This is a schematic diagram of one embodiment of the electric field emission unit and coil of the optoelectronic device defect detection device of this application projected in a horizontal projection plane; Figure 3 This is a schematic diagram of another embodiment of the electric field emission unit and coil of the optoelectronic device defect detection device of this application projected in a horizontal projection plane; Figure 4 This is a schematic diagram of the second embodiment of the optoelectronic device defect detection device of this application; Figure 5 This is a schematic diagram of the third embodiment of the optoelectronic device defect detection device of this application; Figure 6 This is a schematic diagram of the frame of the optoelectronic device defect detection device of this application; Among them, 100 is a defect detection device for optoelectronic devices; 10 is a supporting structure; 20 is a field plate electrode; 21 is an electric field emission unit; 30 is a micro resonant coil array; 31 is a coil; 32 is a magnetic flux enhancement layer; 40 is an image acquisition mechanism; and 50 is a display device. Detailed Implementation

[0017] The present application will now be described in detail with reference to the specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present application, and any structural, methodological, or functional modifications made by those skilled in the art based on these embodiments are included within the scope of protection of this application.

[0018] One embodiment of this application provides a display device defect detection device that avoids physical damage through a non-contact method.

[0019] The optoelectronic device defect detection device 100 in this embodiment, such as Figure 1 As shown, it includes a support structure 10, a field plate electrode 20, a micro resonant coil array 30, and a controller.

[0020] Among them, optoelectronic devices refer to semiconductor devices that can realize the mutual conversion of light energy and electrical energy based on the photoelectric effect or electro-optic effect. Their types include photodiodes, phototransistors, photoresistors, light-emitting diodes, laser diodes, etc. These devices can be applied to many fields such as display devices, solar cells, image sensors, and optoelectronic functional units integrated in IC chips. The following will mainly take display device 50 as an example for specific explanation.

[0021] Taking a display device as an example, the support structure 10 is configured to support the display device 50 under test. The support structure 10 is a highly stable platform that precisely supports and fixes the display device 50. The display device 50 can be LED, OLED, Micro LED, Micro-OLED, etc., including wafers or panels covered with micro-light-emitting units. This support structure 10 ensures that the display device 50 under test maintains a stable and precise relative position with other components of the device throughout the entire testing process.

[0022] To clearly express the positions and directions described in this embodiment, a Cartesian coordinate system suitable for the optoelectronic device display equipment defect detection device 100 is established. The display surface of the display device 50 under test is placed horizontally. The X-axis and Y-axis can be defined on the horizontal plane, and the Z-axis is defined in the direction perpendicular to the horizontal plane. The Z-axis is parallel to the vertical direction. Figures 1-5 The coordinate system is shown in both cases.

[0023] Thus, a field plate electrode 20 is provided above the support structure 10, and a micro resonant coil array 30 is provided above or below the support structure 10.

[0024] The field plate electrode 20 includes multiple independent electric field emitting units 21, which are arranged in an array along at least one direction (e.g., the X direction and / or the Y direction). Each electric field emitting unit 21 is designed to generate a high-intensity electric field in its vicinity, which is the energy source for realizing the electroluminescence of the light-emitting unit.

[0025] The miniature resonant coil array 30 also includes multiple independent coils 31, which are spatially positioned precisely to correspond to the gap regions between the multiple electric field emitting units 21. This arrangement aims to address the problems of weak edge field strength and divergent field lines in existing single electric field sources.

[0026] When the electric field emitting unit 21 is working, the electric field directly below it is strong and uniform. However, in the edge regions between units, the electric field weakens and becomes uneven, directly affecting the accuracy of the detection. By arranging coils 31 in these "weak field regions" and generating magnetic fields, the synergistic complementary effect of electromagnetic fields can be used to effectively compensate and correct the edge electric field, thereby forming a uniform excitation field on the entire surface of the display device 50 under test.

[0027] The controller (e.g., a control system based on or based on an industrial computer, such as a host computer) is configured to synchronously drive the electric field emitting unit 21 in the field plate electrode 20 and the coil 31 in the micro resonant coil array 30 through precise timing control. The drive signal output by the controller causes the electric field and magnetic field to be generated in tandem, which together constitute the uniform excitation field described above for exciting the display device 50 to emit light.

[0028] The image acquisition mechanism 40 is configured to capture the light signal emitted by the display device 50 under excitation by the excitation field. The image acquisition mechanism 40 can be a high-resolution industrial camera capable of clearly capturing the position of the light-emitting surface of the display device 50 under test. When the controller drives the excitation field to illuminate the light-emitting unit on the display device 50, the image acquisition mechanism 40 captures the emitted light signal in real time and transmits the image data containing information such as brightness and chromaticity to the controller for subsequent defect analysis.

[0029] This embodiment arranges the electric field emitting unit 21 (generating the electric field) and the coil 31 (generating the magnetic field) in a spatially staggered and complementary manner. The magnetic field corrects for unevenness at the edges of the electric field, generating a highly uniform excitation field. This ensures that each light-emitting unit on the display device 50 under test is tested under the same excitation conditions, fundamentally solving the problems of low detection accuracy and poor reliability caused by field inhomogeneity in existing non-contact detection technologies. Furthermore, the entire process is completely non-contact, avoiding physical damage to the light-emitting units and enabling large-area parallel detection, with efficiency far exceeding that of traditional contact-based probe methods.

[0030] In one embodiment, in the projection perpendicular to the display surface of the display device 50, that is, in the projection in the vertical direction, a coil 31 is provided between any two adjacent electric field emitting units 21 along at least one direction, forming an arrangement in which the electric field emitting units 21 and the coil 31 are arranged alternately.

[0031] Between any two adjacent electric field emitting units 21, a coil 31 is provided. This arrangement makes the entire excitation assembly composed of electric field emitting units 21 and coils 31 present a periodic sequence structure of "electric field emitting unit 21-coil 31-electric field emitting unit 21-coil 31..." in the lateral direction.

[0032] The at least one direction can be one direction or multiple directions.

[0033] Taking one direction as an example, such as Figure 2 As shown, the electric field emitting unit 21 and the coil 31 are arranged alternately along the X-axis in the horizontal projection plane.

[0034] Taking two directions as an example, such as Figure 3 As shown, the electric field emitting unit 21 and the coil 31 are arranged alternately along the X-axis and also alternately along the Y-axis.

[0035] Other directions can be arranged by changing the angles between different directions.

[0036] In this alternating arrangement, each coil 31 is precisely positioned in the core region where the edge electric field is weakest and most uneven, formed by its two adjacent electric field emitting units 21. The magnetic field generated by the coil 31 can compensate and correct this "weak electric field region" with minimal energy and in the most direct manner.

[0037] On the other hand, it can also be seen that each electric field emitting unit 21 is precisely arranged in the core region where the edge magnetic field formed by its two adjacent coils 31 is the weakest and most uneven. The electric field generated by the electric field emitting unit 21 can compensate and correct the "weak magnetic field region" with the least energy and in the most direct way.

[0038] by Figure 2 For example, along the X-axis, the weak electric field region between adjacent electric field emitting units 21 is compensated by the magnetic field emitted by coil 31.

[0039] by Figure 3 For example, on the one hand, the electric field emitted by each electric field emitting unit 21 in the "weak electric field region" in the front-back, left-right directions of the horizontal projection plane is compensated by the magnetic field emitted by the coil 31. On the other hand, the magnetic field emitted by each coil 31 in the "weak magnetic field region" in the front-back, left-right directions of the horizontal projection plane is compensated by the electric field emitted by the electric field emitting unit 21.

[0040] Figure 3A schematic diagram showing projection observation in a direction perpendicular to the display surface of the display device 50 is illustrated. The electric field emitting units 21 and coils 31 are arranged alternately along a first direction (e.g., the X-axis) and a second direction (e.g., the Y-axis), wherein the first and second directions are perpendicular to each other. This arrangement forms a two-dimensional alternating array structure resembling a checkerboard pattern on a two-dimensional plane. In this structure, each electric field emitting unit 21 is surrounded by coils 31 on all four sides (top, bottom, left, right, or four diagonals), and similarly, each coil 31 is surrounded by electric field emitting units 21.

[0041] This embodiment will use a one-dimensional direction (e.g.) Figure 2 The electric field compensation capability (arranged along the X-axis) is extended to the entire two-dimensional plane. Whether in the horizontal or vertical direction, weak field regions at the edges of the electric field emitting units 21 can be compensated by adjacent coils 31. This ensures that the excitation field remains highly uniform across the entire display surface of the display device 50 under test, avoiding the field strength fluctuations in another dimension that might result from compensation in only one dimension. Even on a large panel, high-precision, high-consistency defect detection can be achieved.

[0042] Preferably, on the horizontal projection plane, each coil 31 is positioned at the middle of an adjacent electric field emitting unit 21.

[0043] like Figure 2 and 3 As shown, when viewed along the Z-axis, the arrangement of the electric field emitting units 21 and coils 31 is not only alternating but also precisely aligned. The geometric center of each coil 31 is precisely located at the midpoint of the line connecting the geometric centers of its two adjacent electric field emitting units 21 (midpoint on the Z-axis projection, staggered in space). Conversely, the geometric center of each electric field emitting unit 21 is also precisely located at the midpoint of the line connecting the geometric centers of its two adjacent coils 31.

[0044] This layout maximizes the synergistic effect between the electric and magnetic fields, economically achieving uniformity and symmetry of the excitation field height, eliminating compensation unevenness or field gradient problems, enabling ultra-high precision detection of minute brightness differences between light-emitting units, improving detection accuracy and reliability, and providing a solid structural foundation for achieving ultra-high precision defect detection.

[0045] In one embodiment, the controller is further configured to sequentially drive different combinations of the electric field emitting unit 21 and the coil 31 in a partitioned scanning manner to form an excitation field in a non-mechanically moving stepwise manner in different areas of the display device 50.

[0046] The controller logically divides the physically continuous field plate electrodes 20 and micro resonant coil array 30 into multiple detection subsets (or detection regions / blocks). For example, a large area of ​​field plate electrodes 20 and micro resonant coil array 30 covering the entire wafer can be virtually divided into a grid, with each grid being a detection subset.

[0047] The controller drives each detection subset sequentially and in a time-division manner according to a preset timing sequence. For example, at time T1, only the units and coil 31 of the first region are driven; at time T2, the first region is turned off, while the units and coil 31 of the second region are driven simultaneously, and so on. This process of the excitation field "moving" on the surface of the display device 50 is an electrical scan achieved through a step-by-step method of non-mechanical movement. Throughout the entire process, no physical displacement occurs between the excitation components and the display device 50 under test. The scanning and detection of the entire display device 50 can be completed simply by switching the drive signals of different regions using a high-speed electronic switch.

[0048] The description of coverage and non-mechanical movement here is for the purpose of explaining partitioned scanning. For a typical small-sized display device 50, the field plate electrode 20 and the micro resonant coil 31 cover the display device 50 on the Z-axis projection surface without generating mechanical movement. For large and extra-large display devices 50, they can be divided into multiple display areas. The image acquisition mechanism 40 or the display device 50 is moved, and the partitioned scanning method described above is applied to each display area. Then, the multiple display areas are spliced ​​together and integrated. The principle is the same.

[0049] The controller's internal components or its control circuitry include an electronic switch matrix. This electronic switch matrix consists of an array of numerous high-speed semiconductor switches (such as MOSFETs), functioning similarly to a programmable circuit router or dispatch center.

[0050] During operation, a unified drive signal from an RF source or power module is input to the electronic switch matrix. The controller sends control commands to the matrix according to a preset partition scanning program to precisely control the on / off state of specific switches within the matrix. By changing the switch states, the electronic switch matrix can precisely and quickly route the input drive signal to different combinations of electric field emitting units 21 and coils 31 corresponding to specific detection areas. When switching to the next detection area is required, the controller only needs to change the command sent to the switch matrix to complete the path switching of the drive signal within nanoseconds.

[0051] In this way, the controller completes the "sequential driving" of different detection areas in a purely electrical manner. Its switching speed is far superior to that of a mechanical moving platform, realizing efficient and high-speed partition scanning. The switching between areas is completed almost instantaneously, significantly shortening the total time required to complete the detection of the entire display device.

[0052] Furthermore, the switching speed of the magnetic field is much faster than that of traditional voltage switching, while the energy consumption of switching is far lower. In traditional electric field voltage switching, the response delay is about 10 microseconds, with each switch consuming approximately 0.5J, while the magnetic field switching speed is about 0.1 nanoseconds, with each switch consuming approximately 0.001J. In other words, through the alternating movement of electric field-magnetic field-electric field, compared to the movement of a pure electric field, the magnetic field can serve as a good supplement to the electric field, greatly improving the screen lighting speed and saving energy.

[0053] The layout of the field plate electrode 20, the micro resonant coil array 30, and the display device 50 is provided in three embodiments in the direction perpendicular to the display surface of the display device 50 (Z-axis direction): (1) such as Figure 1 As shown, the field plate electrode 20 is disposed between the micro resonant coil array 30 and the display device 50, that is, from top to bottom, the micro resonant coil array 30, the field plate electrode 20 and the display device 50 are arranged in sequence.

[0054] (2) For example Figure 4 As shown, the micro resonant coil array 30 is disposed between the field plate electrode 20 and the display device 50, that is, from top to bottom, the array consists of: the field plate electrode 20, the micro resonant coil array 30 and the display device 50.

[0055] (3) such as Figure 5 As shown, the display device 50 is disposed between the field plate electrode 20 and the micro resonant coil array 30, that is, from top to bottom, the order is: field plate electrode 20, display device 50 and micro resonant coil array 30.

[0056] The three layout options offer greater flexibility, allowing for selection based on the usage environment and effectively reducing the manufacturing difficulty and cost of the optoelectronic device display equipment defect detection device 100.

[0057] In embodiments (1)-(3), in order for the light signal emitted by the display device 50 to be captured by the image acquisition mechanism 40 (e.g., a camera) above it, the micro resonant coil array 30 and / or field plate electrode 20 located above the display device 50 need to be optically transparent.

[0058] In embodiments (1)-(3), the field plate electrode 20 is always located on the side of the display device 50 closer to the image acquisition mechanism 40 (or at least does not block the light path), therefore, the field plate electrode 20 is configured as an optically transparent part. The optically transparent design of the field plate electrode 20 is usually achieved by using transparent conductive materials such as indium tin oxide (ITO).

[0059] In embodiments (1) and (2), the micro resonant coil array 30 is located in the optical path and needs to be optically transparent. The optically transparent design of the micro resonant coil array 30 can be achieved by using transparent ITO wires and nanometer-thick metal coils to obtain high optical transmittance.

[0060] In implementation method (3), such as Figure 5 As shown, the image acquisition mechanism 40 is above the display device 50, and the micro resonant coil array 30 is below the display device 50 and not in the optical path. At this time, the micro resonant coil array 30 does not need to be transparent.

[0061] The aforementioned optically transparent structure ensures that, regardless of the stacking method, the light signal emitted from the light-emitting unit can reach the image acquisition mechanism 40 with minimal loss, thus guaranteeing the quality of the image and the strength of the signal.

[0062] In one embodiment, the optoelectronic device display equipment defect detection device 100 further includes a magnetic flux enhancement layer 32, which is disposed on the side of the micro resonant coil array 30 near the display device 50, for collecting and guiding the magnetic field generated by the coil 31.

[0063] The flux enhancement layer 32 is a thin film made of a high-permeability material, such as ferrite, with a relative permeability (μr) of up to 1000 or higher. In embodiments (1) and (2) above, as... Figure 1 and 4 As shown, the flux enhancement layers 32 are all integrated at the bottom of the micro resonant coil array 30; in the above embodiment (3), as Figure 5 As shown, the flux enhancement layers 32 are all integrated on top of the micro resonant coil array 30.

[0064] The high-permeability ferrite layer provides a path with extremely low magnetic resistance for the magnetic field lines generated by coil 31. When coil 31 operates, the magnetic field lines that would normally radiate outwards are "attracted" and constrained within the flux enhancement layer 32, thus being gathered and guided to act more concentratedly and vertically on the display device 50 under test below or above. In this way, under the same driving current, the effective magnetic field strength acting on the display device 50 is significantly enhanced; and by constraining the magnetic field, leakage to non-target areas is reduced, lowering electromagnetic crosstalk between areas. This embodiment achieves a stronger magnetic field control effect with lower energy consumption, improving the overall detection accuracy and efficiency.

[0065] In one embodiment, the optoelectronic device display device defect detection apparatus 100 further includes an energy recovery circuit, which includes an energy storage capacitor and a diode connected in series between the coil and the energy storage capacitor. The conduction direction of the diode is configured to face the energy storage capacitor to form a charging path for conducting current generated when the controller stops driving the coil.

[0066] The diode's conduction direction only allows current to flow from the coil to the energy storage capacitor, preventing reverse current flow, thus forming a charging path. When the controller stops driving a coil, the magnetic field energy stored in the coil is converted into an oscillating current. The charging path setting ensures that this oscillating current is rectified when flowing through the diode, and its positive energy is used to charge the energy storage capacitor.

[0067] This energy recovery circuit efficiently captures and stores the energy released in the previous region during the switching intervals of partition scanning, providing energy for subsequent scans and achieving energy saving and consumption reduction. The specific working process is described in steps S111-S113 below.

[0068] In one embodiment, the optoelectronic device display equipment defect detection device 100 further includes a vacuum cavity, in which the support structure 10, the field plate electrode 20, and the micro resonant coil array 30 are all disposed.

[0069] The vacuum chamber is connected to a vacuum pump to pump the air pressure inside the chamber to a preset high vacuum state before the test begins. The vacuum environment prevents air molecules from ionizing and affecting the test results. In addition, the vacuum environment provides an ultra-clean test environment, eliminating any suspended particulate matter such as dust and moisture that may be present in the air, thus avoiding contamination of the surface of the display device 50.

[0070] In one embodiment, the optoelectronic device display equipment defect detection device 100 further includes a wavelength controller disposed in the optical path between the display device 50 and the image acquisition mechanism 40, for selectively allowing light signals of a specific wavelength to pass through.

[0071] The wavelength controller acts as a programmable or switchable optical filter. When the display device 50 under test (composed of red, green, and blue sub-pixels) is excited to emit light, it simultaneously emits mixed light containing multiple color components. At this time, the controller can instruct the wavelength controller to selectively allow only light signals of specific wavelengths to pass through. For example, the controller can instruct it to only allow light in the 620-650nm wavelength band (red light) and block other colors of light. In this state, the signal captured by the image acquisition mechanism 40 originates only from the red sub-pixels on the display device 50. Subsequently, the controller can switch instructions to allow the wavelength controller to only allow green or blue light, thereby completing independent imaging of the green and blue sub-pixels respectively.

[0072] The wavelength controller enables the optoelectronic device display equipment defect detection device 100 to perform color separation detection. By filtering and capturing the light signals of each of the R, G, and B channels one by one, it can not only determine whether a pixel has a defect, but also accurately diagnose which color sub-pixel the defect originates from. This plays an important role in advanced application scenarios such as accurate defect classification, pixel repair, and display uniformity calibration (Mura compensation).

[0073] In one embodiment, such as Figure 6 As shown, the optoelectronic device defect detection device 100 further includes additional modules selected from at least one of the following or any combination thereof, all of which are communicatively connected to the controller: tilt angle monitoring module, temperature monitoring module, and surface monitoring system, wherein the tilt angle monitoring module monitors the tilt angle of the optoelectronic device, the temperature monitoring module monitors the temperature of the optoelectronic device, and the surface monitoring system monitors the surface curvature of the optoelectronic device.

[0074] The tilt monitoring module, temperature monitoring module, and surface monitoring system are used to monitor and ensure the high stability of the detection process and the accuracy of the results.

[0075] When the optoelectronic device tilts, it affects the parallelism and spacing uniformity between it and the field plate electrode 20, resulting in an uneven excitation field. After receiving a signal from the tilt angle monitoring module that the tilt angle data exceeds a preset threshold, the controller can stop the detection and issue an alarm, or drive the support structure 10 to automatically level itself to ensure that the detection is performed in an ideal posture.

[0076] High-voltage electric fields, high-frequency magnetic fields, or prolonged operation may generate heat accumulation. Temperature changes can affect the luminous efficiency and spectral characteristics of optoelectronic devices, introducing measurement errors. The temperature monitoring module feeds back temperature data to the controller in real time, allowing the controller to adjust the detection cycle or activate the cooling system to avoid operation at high temperatures and eliminate interference from thermal effects.

[0077] For optoelectronic devices on large-size or flexible substrates, their surfaces may exhibit warping or unevenness due to stress. A surface monitoring system detects these minute deformations and provides the data to a controller. The controller can then dynamically compensate for these deformations in the spacing control system, or use the curvature information as one of the references for defect assessment, improving the adaptability and accuracy of detecting non-ideal planar optoelectronic devices.

[0078] In one embodiment, such as Figure 6 As shown, the optoelectronic device defect detection device 100 further includes additional modules selected from at least one of the following or any combination thereof, all of which are communicatively connected to the controller: The safety maintenance module is configured to gradually increase the driving voltage of the field plate electrode 20 to the target detection voltage in a step-by-step manner. The safety maintenance module prevents the fragile optoelectronic device from being damaged by arcing or overcurrent due to instantaneous high voltage. The control power supply slowly and steadily increases the driving voltage of the field plate electrode 20 to the target detection voltage in a staged and gradual manner to ensure the safety of the optoelectronic device.

[0079] The parameter calculation module is configured to calculate and generate the driving parameters required by the controller based on the physical characteristic parameters of the optoelectronic device. This module automates and intelligently performs the detection process. It can automatically calculate and generate optimal driving parameters (such as voltage waveform, frequency, and scanning timing) based on the pre-input or real-time detected physical characteristic parameters of the optoelectronic device (such as material, size, and structure), and then transmit these parameters to the controller for execution.

[0080] The spacing control module is configured to control the spacing between the photoelectric device and the field plate electrode 20. The spacing control module precisely controls the spacing between the photoelectric device and the field plate electrode 20, providing a stable and accurate spacing for the entire device. This precise and stable spacing ensures efficient electromagnetic field coupling.

[0081] The vacuum generating module includes a vacuum chamber and a vacuum generating unit. The support structure 10 and the field plate electrode 20 are both disposed inside the vacuum chamber. The vacuum generating unit controls the vacuum level of the vacuum chamber and extracts the air from the vacuum chamber to achieve the high vacuum level required for detection, providing an insulating environment for the stable application of high voltage electric field and high frequency magnetic field.

[0082] The wavelength control module is set in the optical path between the optoelectronic device and the image acquisition mechanism 40 to selectively allow light signals of a specific wavelength to pass through. The wavelength control module can selectively allow only light signals of a specific wavelength to pass through according to the instructions of the controller, so as to realize color separation detection of the full-color display device 50, thereby accurately diagnosing which color sub-pixel has a defect.

[0083] The joint inspection module is configured for bidirectional communication of inspection data with external devices. It is configured as a data communication interface, enabling this device to communicate bidirectionally with external devices on the production line (such as other inspection equipment or a central database). The joint inspection module can receive inspection data from previous processes for reference, and can also send defect data generated by this device to subsequent processes.

[0084] Compared with commonly used technologies, this embodiment has the following advantages: The optoelectronic device display equipment defect detection device 100 adopts a structure in which an array of electric field emitting units 21 and a micro resonant coil array 30 are synergistically excited. By placing the coil 31 in the gap area between the electric field emitting units 21, the magnetic field generated by the coil 31 is used to compensate or correct the divergent and non-uniform electric field in the edge area of ​​the electric field emitting units 21. The synergistic complementarity of the electric field and the magnetic field forms a highly uniform excitation field on the display device under test 50 in a non-contact manner, ensuring that each light-emitting unit emits light in the same environment. This avoids contamination or scratches on the surface of the display device 50 and eliminates missed detections and misjudgments caused by uneven excitation field. It greatly improves the accuracy and consistency of defect detection results. Moreover, compared with probe measurement, this detection method has significantly improved detection efficiency and can well match the needs of large-scale and fast-paced production of display panels.

[0085] An embodiment of the present invention also provides a method for detecting defects in optoelectronic device display equipment, comprising the following steps: Step S10: Drive multiple electric field emitting units to generate an electric field and drive multiple coils to generate a magnetic field, so that the electric field and the magnetic field work together on the optoelectronic device display device to form an excitation field, so that the optoelectronic device display device emits light signals. The multiple electric field emitting units are arranged in an array along at least one direction, and the multiple coils correspond in space to the gap region between the multiple electric field emitting units.

[0086] Step S20: Acquire the light signal emitted by the optoelectronic device display device.

[0087] Step S30: Based on the optical signal, evaluate the defect status of the optoelectronic device display device.

[0088] In step S10, after the optoelectronic device under test is stably placed on the support structure, the controller starts the detection program. The controller simultaneously sends drive signals to multiple electric field emitting units in the field plate electrodes and multiple coils in the micro resonant coil array. The multiple coils are precisely arranged in the gap area between the electric field emitting units.

[0089] Similarly, the optoelectronic device in the optoelectronic device defect detection method of this embodiment will also be described using a display device as an example.

[0090] When the electric field emitting unit and the coil are driven, they generate electric and magnetic fields respectively, which work together on the display device. The electric field excites carrier recombination within the light-emitting unit, producing electroluminescence; while the magnetic field generated by the coil at the edge of the electric field constrains and corrects the divergent and uneven electric field at the edge of the electric field emitting unit. The result of this synergistic effect is the formation of a uniform and stable excitation field on the surface of the display device, enabling the light-emitting units on the display device to effectively emit light signals.

[0091] In step S20, when the light-emitting unit is excited and emits light, the image acquisition mechanism (e.g., an industrial camera) acquires the light signal emitted by the display device. What is acquired is usually one or more digital images, and the grayscale value or color value of each pixel in the image directly corresponds to the luminous intensity and color state of the light-emitting unit at the corresponding position on the display device under test.

[0092] In step S30, the acquired light signal (i.e., image data) is transmitted to the controller or a dedicated image processing unit. The controller evaluates the defect status of the display device based on the light signal. The evaluation can be based on a preset threshold standard, for example, by comparing with a standard brightness value, identifying light-emitting units that are completely dark (dark spot), have excessively high brightness (bright spot), or have excessively low brightness (weak spot), and recording their coordinates for Demura processing.

[0093] Ultimately, this optoelectronic device display equipment defect detection method will output a defect distribution map or defect list of the display equipment under test.

[0094] This defect detection method for optoelectronic display devices innovatively solves the key problem of uneven excitation fields in non-contact detection by utilizing the synergistic effect of electric and magnetic fields, laying a solid foundation for accurate defect assessment. The entire process achieves completely non-contact operation, avoiding physical damage, while its parallel excitation and acquisition method significantly improves detection efficiency compared to traditional technologies.

[0095] In one embodiment, step S10 includes: Step S11: Drive the electric field emitting unit and the coil in different combinations in a partitioned scanning manner, and light up different detection areas of the display device in a step-by-step manner.

[0096] The controller does not drive all the electric field emitting units and coils at once, but logically divides them into multiple combinations. Each combination corresponds to a specific detection area on the display device for partitioned scanning. The partitioned scanning process specifically includes: the controller sequentially drives these different combinations of units and coils according to a preset scanning path and timing sequence.

[0097] For example, at the start of a detection cycle, the controller first activates the electric field emitting unit and coil combination corresponding to the first detection area, forming an excitation field in that area. Then, in a step-by-step manner, it immediately activates the electric field emitting unit and coil combination of the second detection area on the display device, and so on. This "activate-detect-deactivate-activate next" cycle proceeds at a very high speed until all preset detection areas have been sequentially lit and detected.

[0098] In one embodiment, to improve the energy efficiency of the detection method of the present invention and reduce the power consumption of the device, a highly efficient energy recovery process is added to the partition scanning method. Specifically, step S11 further includes: Step S111: After shutting off the coil current in a detection area, start the LC recovery circuit connected to the coil, so that the magnetic field energy released in the coil generates an oscillating current in the LC recovery circuit.

[0099] Step S112: The oscillating current is rectified by the diode in the LC recovery circuit, and the rectified electrical energy is charged into the energy storage capacitor for storage.

[0100] Step S113: When driving the coil of the next detection area, the electrical energy stored in the energy storage capacitor is used to assist the driving.

[0101] In step S111, when the scanning task in a detection area (e.g., block A) is completed and the controller is ready to switch to the next detection area (e.g., block B), the drive current of the coil corresponding to block A is turned off. According to the principle of electromagnetic induction, when the current flowing through the coil (essentially an inductor) is cut off, the magnetic field energy stored inside is released. At this time, step S111 initiates the LC recovery circuit connected to the coil. This recovery circuit includes at least an inductor and a capacitor. The magnetic field energy released by the coil is not directly dissipated in the form of heat, but is converted into electric field energy in this LC recovery circuit, and undergoes high-speed back-and-forth conversion with the magnetic field energy, thereby generating an oscillating current in the circuit.

[0102] Step S112 performs energy capture and storage, where the unidirectional conductivity of a diode is used to rectify the oscillating current generated in step S111. After passing through the diode, the oscillating current flows in only one direction to a storage capacitor, charging it. In this way, the magnetic field energy, which originally existed in an alternating form, is efficiently converted into stable charge and stored in the storage capacitor.

[0103] In step S113, when the controller starts driving the coil of the next detection area (block B), the electrical energy stored in the energy storage capacitor in step S112 will be released and used to power the coil of block B together with the main power system. This is equivalent to providing additional energy for the new round of driving, thus playing the role of auxiliary driving.

[0104] The energy recovery process for shutting down and starting up other coils is repeated according to the above steps.

[0105] Through the closed-loop process of "shutdown → oscillation → rectification → storage → reuse" described above, this method efficiently recovers the magnetic field energy that would otherwise be wasted during partition switching and uses it for the next driving task, forming a highly efficient energy cycle. This significantly reduces the total energy consumption of the entire device during continuous partition scanning, especially in high-frequency, multi-block detection scenarios, where its energy-saving effect is even more significant. This helps reduce equipment operating costs and improve the overall energy efficiency of the system. Experiments have verified that more than 80% of the energy can be recovered.

[0106] In one embodiment, step S20 includes: Step S21: Corresponding to the sequential lighting of the display device, capture the light signal emitted by each of the detection areas zone by zone.

[0107] Step S21 achieves precise synchronization between drive illumination and image capture. The working mode of the image acquisition mechanism is no longer a single long exposure to capture the entire panel, but a series of high-speed, short-time exposure continuous shots.

[0108] Ultimately, the controller receives a series of sequentially acquired image data frames, each corresponding to a different detection area. These data frames can be seamlessly stitched together by subsequent image processing software to form a complete, high-precision defect distribution map of the display device.

[0109] This method eliminates optical crosstalk between different detection areas, avoids the light signal of the target emitting area being contaminated by the light of adjacent areas, greatly improves the signal-to-noise ratio and spatial resolution of the measurement, makes the location of defects more accurate, and especially improves the detection accuracy of high-density display devices with extremely small pixel pitch.

[0110] It should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This way of describing the specification is only for clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

[0111] The detailed descriptions listed above are merely specific descriptions of feasible implementation methods of this application and are not intended to limit the scope of protection of this application. All equivalent implementation methods or modifications made without departing from the spirit of the art of this application should be included within the scope of protection of this application.

Claims

1. A defect detection device for optoelectronic devices, characterized in that, include: A support structure configured to support the optoelectronic device under test; The field plate electrode includes a plurality of electric field emitting units arranged in an array along at least one direction; A controller, electrically connected to the field plate electrodes and configured to drive the electric field emitting unit to generate an electric field to form an excitation field on the optoelectronic device; An image acquisition mechanism is configured to capture the light signal emitted by the optoelectronic device by the excitation field.

2. The optoelectronic device defect detection device according to claim 1, characterized in that, The optoelectronic device defect detection device further includes a micro resonant coil array, which includes multiple coils. The controller is electrically connected to the micro resonant coil array and configured to drive the multiple coils to generate a magnetic field to form an excitation field on the optoelectronic device.

3. The optoelectronic device defect detection device according to claim 2, characterized in that, The plurality of coils spatially correspond to the gap region between the plurality of electric field emitting units; In the projection perpendicular to the display surface of the optoelectronic device, along at least one direction, a coil is provided between any two adjacent electric field emitting units, forming an arrangement in which the electric field emitting units and the coils are arranged alternately.

4. The optoelectronic device defect detection device according to claim 3, characterized in that, In the projection perpendicular to the display surface of the optoelectronic device, the electric field emitting unit and the coil are arranged alternately along the first direction and the second direction to form a two-dimensional alternating array structure, wherein the first direction is perpendicular to the second direction.

5. The optoelectronic device defect detection device according to claim 2, characterized in that, The controller is further configured to sequentially drive different combinations of the electric field emitting unit and the coil in a partitioned scanning manner, so as to form the excitation field in a non-mechanical stepping manner on different regions of the optoelectronic device.

6. The optoelectronic device defect detection device according to claim 2, characterized in that, In the direction perpendicular to the display surface of the optoelectronic device, The field plate electrode is disposed between the micro resonant coil array and the optoelectronic device; or... The micro resonant coil array is disposed between the field plate electrode and the optoelectronic device; or... The optoelectronic device is disposed between the field plate electrode and the micro resonant coil array.

7. The optoelectronic device defect detection device according to claim 2 or 6, characterized in that, The optoelectronic device defect detection device also includes a magnetic flux enhancement layer, which is disposed on the side of the micro resonant coil array close to the optoelectronic device, in order to collect and guide the magnetic field generated by the coil.

8. The optoelectronic device defect detection device according to claim 2, characterized in that, The optoelectronic device defect detection device further includes an energy recovery circuit, which includes an energy storage capacitor and a diode connected in series between the coil and the energy storage capacitor. The conduction direction of the diode is configured to face the energy storage capacitor to form a charging path for conducting the current generated when the controller stops driving the coil.

9. The optoelectronic device defect detection device according to claim 1, characterized in that, The optoelectronic device defect detection device further includes additional modules selected from at least one of the following or any combination thereof, all of which are communicatively connected to the controller: A tilt angle monitoring module monitors the tilt angle of the optoelectronic device; Temperature monitoring module, for monitoring the temperature of the optoelectronic device; A surface monitoring system monitors the surface curvature of the optoelectronic device.

10. The optoelectronic device defect detection device according to claim 1, characterized in that, The optoelectronic device defect detection device further includes additional modules selected from at least one of the following or any combination thereof, all of which are communicatively connected to the controller: The safety maintenance module is configured to gradually increase the driving voltage of the field plate electrode to the target detection voltage by step-by-step voltage increase; The parameter calculation module is configured to calculate and generate the driving parameters required by the controller based on the physical characteristic parameters of the optoelectronic device. A spacing control module is configured to control the spacing between the optoelectronic device and the field plate electrode; A vacuum generating module includes a vacuum chamber and a vacuum generating unit. The support structure and the field plate electrode are both disposed in the vacuum chamber, and the vacuum generating unit controls the vacuum level of the vacuum chamber. A wavelength control module is disposed in the optical path between the optoelectronic device and the image acquisition mechanism to selectively allow light signals of specific wavelengths to pass through; The joint detection module is configured to perform bidirectional communication of detection data with external devices.

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