A high-power radio frequency switching circuit

Abstract

This utility model discloses a high-power radio frequency (RF) switch circuit, belonging to the field of RF switch circuit technology. It includes a DC blocking capacitor C2, a matching inductor L12, a diode D1, a capacitor C9, a DC blocking capacitor C4, a matching inductor L6, a diode D2, a capacitor C12, a DC blocking capacitor C7, and a matching inductor L7. One end of the DC blocking capacitor C2 is connected to the input terminal Term1, and the other end is connected to one end of the matching inductor L12. The other end of the matching inductor L12 is connected to the two switching paths, namely the first path and the second path. In the first and second paths, capacitor C9 and DC blocking capacitor C4, and capacitor C12 and DC blocking capacitor C7, are respectively connected to grounded diodes D3 and D4. Both diodes D3 and D4 are connected to a feed circuit. By connecting the two output channels to a grounded diode D3 and diode D4, this utility model improves the isolation between channels, expands the operating frequency range, and reduces high-frequency insertion loss.

Description

Technical Field

[0001] This utility model relates to a high-power radio frequency switch circuit, belonging to the technical field of high-power radio frequency switch circuits. Background Technology

[0002] For switching high-power signals, current technology uses PIN diodes as switches, such as... Figure 1 As shown, when diode D1 is on, a high-power signal can pass from input terminal Term1 to output terminal Term2. At this time, diode D2 is off, and the signal from input terminal Term1 to output terminal Term3 is turned off. Figure 2 These are the S-parameters of each port when diode D1 is on; when diode D2 is on, high-power signals can pass from input channel Term1 to output channel Term3. At this time, diode D1 is off, and the signal from input channel Term1 to output channel Term2 is turned off. Figure 3 These are the S-parameters at each port when diode D2 is conducting. This circuit structure has the following drawbacks: 1) Low operating frequency; insertion loss is close to 0.4dB at 1GHz. 2) Poor isolation, only 19dB at 0.5GHz and only 13dB at 1GHz. Utility Model Content

[0003] The technical problem to be solved by this utility model is to provide a high-power radio frequency switch circuit with high operating frequency, low insertion loss, and high isolation.

[0004] To solve the aforementioned technical problems of this utility model, the technical solution adopted by this utility model is as follows: a high-power radio frequency switch circuit, including a DC blocking capacitor C2, a matching inductor L12, a diode D1, a capacitor C9, a DC blocking capacitor C4, a matching inductor L6, a diode D2, a capacitor C12, a DC blocking capacitor C7, and a matching inductor L7. One end of the DC blocking capacitor C2 is connected to the input terminal Term1, and the other end is connected to one end of the matching inductor L12. The other end of the matching inductor L12 is connected to two switching paths, namely the first path and the second path. The first path includes a diode D1, a matching inductor L6, a matching inductor L7, and a matching inductor L7 connected in sequence. The second path includes a diode D2, a capacitor C12, a DC blocking capacitor C7, and a matching inductor L7 connected in sequence. The output terminals of the matching inductors L6 and L7 are connected to the output terminals Term2 and Term3, respectively. The connection between capacitor C9 and DC blocking capacitor C4, and between capacitor C12 and DC blocking capacitor C7, are connected to the positive terminals of diodes D3 and D4, respectively. The negative terminals of diodes D3 and D4 are grounded. Diodes D1, D2, D3, and D4 are all connected to a power supply circuit.

[0005] Furthermore, the power supply circuit for diode D1 includes capacitor C3, inductor L5, resistor R2, and DC power supply. One end of capacitor C3 is grounded, and the other end is connected to one end of inductor L5 and one end of resistor R2. The other end of inductor L5 is connected to the negative terminal of diode D1, and the other end of resistor R2 is connected to the positive terminal of DC power supply. The negative terminal of DC power supply is grounded. Diodes D2, D3, and D4 have the same power supply circuit structure as diode D1. The power supply circuits for diodes D3 and D4 are connected to the positive terminals of diodes D3 and D4.

[0006] The beneficial effects of this utility model are as follows: Compared with the prior art, after connecting the two output channels of this utility model to a grounding diode D3 and a diode D4, the isolation between the channels can be improved, the operating frequency range can be widened from the original 500MHz to 3GHz, and the high-frequency insertion loss can be reduced from more than 0.4dB to less than 0.3dB. Attached Figure Description

[0007] Figure 1 This is a schematic diagram of an existing high-power radio frequency switch circuit. Figure 2 yes Figure 1 The S-parameter curves of each port when D1 in the circuit is turned on; Figure 3 yes Figure 1 The S-parameter curves of each port when D2 in the circuit is turned on; Figure 4 This is a schematic diagram of a high-power radio frequency switch circuit in Embodiment 1; Figure 5 yes Figure 4 The S-parameter curves of each port when D1 in the circuit is turned on; Figure 6 yes Figure 4 The S-parameter curves of each port when D2 in the circuit is turned on. Detailed Implementation

[0008] The present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0009] Example 1: As Figure 4As shown, a high-power radio frequency switching circuit includes a DC blocking capacitor C2, a matching inductor L12, a diode D1, a capacitor C9, a DC blocking capacitor C4, a matching inductor L6, a diode D2, a capacitor C12, a DC blocking capacitor C7, and a matching inductor L7. One end of the DC blocking capacitor C2 is connected to the input terminal Term1, and the other end is connected to one end of the matching inductor L12. The other end of the matching inductor L12 is connected to two switching paths, namely a first path and a second path. The first path includes a diode D1, a capacitor C9, a DC blocking capacitor C4, and a matching inductor L6 connected in sequence. The second path includes a diode D2, a capacitor C12, a capacitor C9, a matching inductor L6 connected in sequence. 2. The output terminals of DC blocking capacitor C7 and matching inductor L7, matching inductor L6 and matching inductor L7 are connected to output terminals Term2 and Term3 respectively. The connection between capacitor C9 and DC blocking capacitor C4 and between capacitor C12 and DC blocking capacitor C7 is connected to the positive terminals of diodes D3 and D4 respectively. The negative terminals of diodes D3 and D4 are grounded. Since the diodes connected to both sides of capacitors C9 and C12 are controlled by different voltages, capacitors C9 and C12 serve to isolate DC voltage. Diodes D1, D2, D3 and D4 are all connected to a power supply circuit.

[0010] Connecting the two output channels to a grounding diode D3 and a diode D4 improves the isolation between the channels, expands the operating frequency range from 500MHz to 3GHz, and reduces the high-frequency insertion loss from more than 0.4dB to less than 0.3dB.

[0011] The power supply circuit for diode D1 includes capacitor C3, inductor L5, resistor R2, and a DC power supply. One end of capacitor C3 is grounded, and the other end is connected to one end of inductor L5 and one end of resistor R2. The other end of inductor L5 is connected to the negative terminal of diode D1, and the other end of resistor R2 is connected to the positive terminal of the DC power supply. The negative terminal of the DC power supply is grounded. The power supply circuit for diode D1 is connected in the same way as the power supply circuit for diode D2. The power supply circuits for diodes D2, D3, and D4 are the same as those for diode D1. The power supply circuits for diodes D3 and D4 are connected to the positive terminals of diodes D3 and D4, respectively.

[0012] A block diagram of the design principle of a high-power radio frequency switching circuit is shown below. Figure 4L9 is the power supply inductor, C2, C4, and C7 are DC blocking capacitors, L6, L7, and L12 are matching inductors, and R2, C3, L5, R3, C8, L8, R5, C10, L10, R6, C11, and L11 are the power supply circuits for each diode. When D1 is on and D3 is off, a high-power signal can pass from the input terminal Term1 to the output terminal Term2. At this time, D2 is off and D4 is on, and the signal from the input terminal Term1 to the output terminal Term3 is turned off. When D2 is on and D4 is off, a high-power signal can pass from the input terminal Term1 to the output terminal Term3. At this time, D1 is off and D3 is on, and the signal from the input terminal Term1 to the output terminal Term2 is turned off.

[0013] Simulation of this high-power RF switching circuit yields the S-parameters for both channels. The simulation results are shown below. Figure 5 and Figure 6 As shown, dB(S(2,1)) represents the insertion loss from input channel Term1 to output channel Term2, dB(S(3,1)) represents the insertion loss from input channel Term1 to output channel Term3, and dB(S(1,1)) represents the return loss from input channel Term1. M1, M2, and M3 are parameters of S21, M4, M5, and M6 are parameters of S31, and M4, M5, and M6 are parameters of S11. Simulation results show that when the channel is on, as can be seen from M1, M2, and M3 of S21, the operating frequency can range from 30MHz to 1.5GHz, with the insertion loss generally within 0.3dB, while the original scheme exceeds 0.4dB at 1GHz. Correspondingly, as can be seen from M4, M5, and M6 of S31, the operating frequency can range from 30MHz to 1.5GHz, and the channel isolation can reach over 30dB.

[0014] Simulation results show that the high-power RF switching circuit of this application has the following advantages: 1) The high-power RF switching circuit has a wider operating frequency range. The original solution was from 30MHz to 500MHz, while this application can reach 3GHz. 2) The high-power RF switching circuit of this application has lower high-frequency insertion loss. The original solution has a loss of more than 0.4dB at 1GHz, while the loss of this application is basically within 0.3dB. 3. The high-power RF switch circuit of this application has better isolation. The original solution only has 19dB at 500MHz, while the channel isolation of the high-power RF switch circuit of this application can reach more than 30dB within 1.5GHz.

[0015] Example 2: A control method for a high-power radio frequency switch circuit, wherein: when diode D1 is turned on and diode D3 is turned off, a high-power signal can pass from input terminal Term1 to output terminal Term2; at this time, diode D2 is turned off and diode D4 is turned on, and the signal from input terminal Term1 to output terminal Term3 is turned off; when diode D2 is turned on and diode D4 is turned off, a high-power signal can pass from input terminal Term1 to output terminal Term3; at this time, diode D1 is turned off and diode D3 is turned on, and the signal from input terminal Term1 to output terminal Term2 is turned off.

[0016] The above description is merely a specific embodiment of this utility model, but the protection scope of this utility model is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this utility model should be included within the protection scope of this utility model. Therefore, the protection scope of this utility model should be determined by the protection scope of the claims.

Claims

1. A high-power radio frequency switching circuit, characterized in that, The circuit includes a DC blocking capacitor C2, a matching inductor L12, a diode D1, a capacitor C9, a DC blocking capacitor C4, a matching inductor L6, a diode D2, a capacitor C12, a DC blocking capacitor C7, and a matching inductor L7. One end of the DC blocking capacitor C2 is connected to the input terminal Term1, and the other end is connected to one end of the matching inductor L12. The other end of the matching inductor L12 is connected to two switching paths, namely the first path and the second path. The first path includes a diode D1, a capacitor C9, a DC blocking capacitor C4, and a matching inductor L6 connected in sequence. The second path... The circuit includes diode D2, capacitor C12, DC blocking capacitor C7 and matching inductor L7 connected in sequence. The output terminals of matching inductor L6 and matching inductor L7 are connected to output terminal Term2 and output terminal Term3, respectively. The connection between capacitor C9 and DC blocking capacitor C4 and between capacitor C12 and DC blocking capacitor C7 is connected to the positive terminals of diode D3 and diode D4, respectively. The negative terminals of diode D3 and diode D4 are grounded. Diodes D1, D2, D3 and D4 are all connected to a power supply circuit.

2. The high-power radio frequency switching circuit according to claim 1, characterized in that, The power supply circuit for diode D1 includes capacitor C3, inductor L5, resistor R2, and DC power supply. One end of capacitor C3 is grounded, and the other end is connected to one end of inductor L5 and one end of resistor R2. The other end of inductor L5 is connected to the negative terminal of diode D1, and the other end of resistor R2 is connected to the positive terminal of DC power supply. The negative terminal of DC power supply is grounded. The power supply circuits for diodes D2, D3, and D4 have the same structure as those for diode D1. The power supply circuits for diodes D3 and D4 are connected to the positive terminals of diodes D3 and D4, respectively.

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