Light-emitting element

Abstract

This application discloses a light-emitting element, including a substrate, a first conductivity type semiconductor layer, and a mesa structure. The mesa structure includes an active layer and a second conductivity type semiconductor layer. The light-emitting element also includes a first electrode, a second electrode, an insulating layer, and a first pad and a second pad. The mesa structure includes a main body and an extension. In a first direction, the mesa structure has a first end and a second end disposed opposite to each other. A first opening and a second opening are arranged on the insulating layer. The first opening is located near the first end, and the second opening is located at a position corresponding to the second end. The first pad makes electrical contact with the first electrode through the first opening, and the second pad makes electrical contact with the second electrode through the second opening. This application can increase the contact area between the pad and the electrode and the light-emitting area while keeping the pad spacing constant, reduce contact resistance, shorten the current path, reduce voltage drop, make the current diffuse more uniformly, improve the luminous efficiency, and avoid short circuits of the pads.

Description

Technical Field

[0001] This application belongs to the field of semiconductor device technology, and specifically relates to a light-emitting element. Background Technology

[0002] The structure of a flip-chip LED consists of a substrate, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, and electrodes, from top to bottom. In this structure, both the p-electrode and the n-electrode are located on the bottom surface, away from the light-emitting surface, which avoids blocking the emitted light and improves the light emission efficiency of the chip.

[0003] Currently, in existing UV flip-chip LEDs, to accommodate two pads within a limited chip area and ensure the pads have sufficient dimensions to meet current carrying capacity and soldering strength requirements, it is sometimes necessary to sacrifice some pad spacing. However, during the reflow soldering process of flip-chips, if the pad spacing is too small, the molten solder paste may flow and connect the two pads that should be isolated due to surface tension or external forces (such as uneven pad stress), causing short-circuit failure. Insufficient spacing between n-type and p-type pads significantly increases the risk of solder paste / gold bump bridging. Utility Model Content

[0004] The purpose of this application is to provide a light-emitting element that significantly increases the light-emitting area, increases the contact area between the p-type pad and the p-type electrode, improves current uniformity, and increases light output efficiency without affecting the spacing between the n-type pad and the p-type pad.

[0005] To achieve the above objectives, a first aspect of this application provides a light-emitting element, comprising a substrate, a first conductivity type semiconductor layer, and a mesa structure stacked sequentially. The mesa structure includes an active layer and a second conductivity type semiconductor layer stacked sequentially along a direction away from the substrate. The light-emitting element further includes a first electrode disposed on a region of the first conductivity type semiconductor layer not covered by the mesa structure, a second electrode disposed on the mesa structure, an insulating layer covering the first electrode and the second electrode, and a first pad and a second pad disposed on the insulating layer.

[0006] The tabletop structure includes a main body extending along a first direction and an extension disposed on the side of the main body. In the first direction, the tabletop structure has a first end and a second end disposed opposite to each other.

[0007] The insulating layer has a first opening and a second opening that overlap with the orthographic projection of the first electrode and the second electrode, respectively. The first opening is located near the first end, and the second opening is located at a position corresponding to the second end. The first pad is in electrical contact with the first electrode through the first opening, and the second pad is in electrical contact with the second electrode through the second opening.

[0008] In one or more embodiments, the first opening is located at one or both ends of the first end in a second direction, the second direction being perpendicular to the first direction.

[0009] In one or more embodiments, the first opening extends along the first direction.

[0010] In one or more embodiments, the table structure includes a plurality of extensions spaced apart along the first direction on one or both sides of the main body.

[0011] The plurality of extensions includes a plurality of first extensions adjacent to the first opening, the length of the plurality of first extensions being less than the length of the other extensions, so as to form a clearance area on the side of the table structure near the first opening, at least a portion of the first opening being located in the clearance area.

[0012] In one or more embodiments, the length of the plurality of first extensions gradually increases or decreases in the first direction, so that the diameter of the first opening gradually decreases or increases along the first direction.

[0013] In one or more embodiments, the second opening includes a main segment that overlaps with the orthographic projection of the main body and a branch segment that overlaps with the orthographic projection of at least one of the extensions.

[0014] In one or more embodiments, a first current guide port is arranged on the first electrode, the first current guide port being located between the first pad and the second pad.

[0015] In one or more embodiments, a second current guide is disposed on the first conductivity type semiconductor layer, which at least partially overlaps with the first current guide.

[0016] In one or more embodiments, the first current guide port extends along the first direction.

[0017] In one or more embodiments, the insulating layer is a DBR insulating layer composed of alternating layers of high refractive index and low refractive index.

[0018] In one or more embodiments, the first electrode and / or the second electrode includes a contact layer, a reflective layer and a barrier layer sequentially stacked along a direction away from the substrate.

[0019] In one or more embodiments, the light-emitting element is an ultraviolet light-emitting element.

[0020] The advantages of this application, which differ from existing technologies, are:

[0021] This application can increase the contact area between the pad and the electrode and the light-emitting area while keeping the distance between the first pad and the second pad unchanged, reduce the contact resistance, shorten the current path, reduce the resistance voltage drop, and allow the current to diffuse more evenly throughout the quantum well region, thereby improving the light-emitting efficiency and effectively avoiding the short circuit problem of the pad.

[0022] The length of the extension of the platform structure in this application can be unevenly set, which can provide more space for the first opening, help to further increase the contact area between the first pad and the first electrode, reduce contact resistance and voltage drop, improve luminous efficiency, and help improve heat dissipation.

[0023] The first electrode of this application has a first current guiding port located between the first pad and the second pad. The first current guiding port can guide the current laterally and expand the current uniformity. On the other hand, after being covered by the insulating layer, it can form a accommodating space. The molten solder of the first pad during the soldering process can flow into the accommodating space, preventing the solder from flowing to the area of ​​the second pad, effectively preventing the first pad and the second pad from contacting each other, and playing a role in avoiding short circuit. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a top view schematic diagram of one embodiment of the light-emitting element of this application;

[0026] Figure 2 yes Figure 1 Schematic diagram of the cross-sectional structure of the middle AA surface;

[0027] Figure 3 yes Figure 1 Schematic diagram of the cross-sectional structure of the middle BB surface;

[0028] Figure 4 This is a top view schematic diagram of another embodiment of the light-emitting element of this application;

[0029] Figure 5 This is a top view schematic diagram of another embodiment of the light-emitting element of this application;

[0030] Figure 6 This is a top view schematic diagram of another embodiment of the light-emitting element of this application;

[0031] Figure 7 This is a top view structural schematic diagram of another embodiment of the light-emitting element of this application;

[0032] Figure 8 This is a top view schematic diagram of another embodiment of the light-emitting element of this application;

[0033] Figure 9 yes Figure 8 A cross-sectional structural schematic diagram of one embodiment of the C-plane;

[0034] Figure 10 yes Figure 8 A cross-sectional view of another embodiment of the C-plane.

[0035] Explanation of key figure labels:

[0036] Substrate 100;

[0037] First conductivity type semiconductor layer 200; first region 201; second region 202; second current guide port 203;

[0038] Tabletop structure 300; main body 301; extension 302; first extension 302a; first end 303; second end 304;

[0039] Active layer 400;

[0040] Second conductivity type semiconductor layer 500;

[0041] First electrode 600; First current guide port 601;

[0042] Second electrode 700;

[0043] Insulating layer 800; First opening 801; Second opening 802; Main body segment 8021; Branch segment 8022

[0044] First pad 900;

[0045] Second pad 1000;

[0046] Avoidance zone 1100;

[0047] Storage space: 1200. Detailed Implementation

[0048] To enable those skilled in the art to better understand the technical solutions in this disclosure, the technical solutions in the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. Based on the embodiments in this disclosure, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of this disclosure.

[0049] Currently, in existing UV flip-chip LEDs, to accommodate two pads within a limited chip area and ensure the pads have sufficient dimensions to meet current carrying capacity and soldering strength requirements, it is sometimes necessary to sacrifice some pad spacing. However, during the reflow soldering process of flip-chips, if the pad spacing is too small, the molten solder paste may flow and connect the two pads that should be isolated due to surface tension or external forces (such as uneven pad stress), causing short-circuit failure. Insufficient spacing between n-type and p-type pads significantly increases the risk of solder paste / gold bump bridging.

[0050] To address the aforementioned issues, the applicant has developed a novel light-emitting element that can increase the area of ​​the light-emitting region while ensuring sufficient spacing between the n-type and p-type pads. This, in turn, increases the contact area between the electrode and the pad, reduces contact resistance, and decreases voltage drop, thereby improving luminous efficiency and heat dissipation.

[0051] Specifically, please refer to Figures 1 to 3 , Figure 1 This is a top view schematic diagram of one embodiment of the light-emitting element of this application. Figure 2 yes Figure 1 Schematic diagram of the cross-sectional structure of plane AA in the middle. Figure 3 yes Figure 1 A cross-sectional view of the middle BB plane is shown. To facilitate observation of the internal structure, [the view is shown here]. Figure 1 Furthermore, the pads and insulating layer were made transparent in the subsequent top-view structural diagram.

[0052] like Figures 1 to 3 As shown, the light-emitting element includes a substrate 100 and a first conductivity type semiconductor layer 200 disposed on the substrate 100.

[0053] The substrate 100 may be a sapphire substrate, a silicon carbide substrate, a gallium nitride substrate, a gallium arsenide substrate, a silicon substrate, or other semiconductor material substrates known in the art.

[0054] The surface of the first conductivity type semiconductor layer 200 has a first region 201 and a second region 202 other than the first region 201, wherein the first region 201 is provided with a mesa structure 300 and the second region 202 is provided with a first electrode 600.

[0055] Specifically, the mesa structure 300 includes an active layer 400 and a second conductive type semiconductor layer 500 stacked sequentially along a direction away from the first conductive type semiconductor layer 200.

[0056] A second electrode 700 is also disposed on the surface of the second conductivity type semiconductor layer 500.

[0057] In this embodiment, the first conductivity type semiconductor layer 200 can be configured as at least one of a group III-V or group II-VI compound semiconductor doped with a dopant of the first conductivity type. For example, the first conductivity type semiconductor layer 200 can be one of the group consisting of GaN, AlGaN, GaAl, InP, InAs, and GaP.

[0058] In one embodiment, the light-emitting element can be a deep ultraviolet light-emitting element, and the material of the first conductivity type semiconductor layer 200 can be AlGaN. The first conductivity type semiconductor layer 200 can be an n-type semiconductor layer doped with a first conductivity type dopant, such as an n-type dopant like Si, Ge, Sn, Se, Te, etc.

[0059] In this embodiment, the second conductivity type semiconductor layer 500 can be configured as at least one of a group III-V or group II-VI compound semiconductor doped with a dopant of the second conductivity type. For example, the second conductivity type semiconductor layer can be one of the group consisting of GaN, AlGaN, GaAl, InP, InAs, and GaP.

[0060] In one embodiment, the light-emitting element can be a deep ultraviolet light-emitting element, and the material of the second conductivity type semiconductor layer 500 can be AlGaN. The second conductivity type semiconductor layer 500 can be a p-type semiconductor layer with a second conductivity type dopant, such as a p-type dopant made of Mg, Zn, Ca, Sr, or Ba.

[0061] In this embodiment, the first conductivity type semiconductor layer 200 is an n-type semiconductor layer and the second conductivity type semiconductor layer is a p-type semiconductor layer, thereby forming a Pn structure. It can be understood that in other embodiments, the first conductivity type semiconductor layer 200 may also be a p-type semiconductor layer doped with a p-type dopant, and correspondingly, the second conductivity type semiconductor layer 500 may also be an n-type semiconductor layer doped with an n-type dopant, all of which can achieve the effect of this embodiment.

[0062] In this embodiment, the materials of the first electrode 600 and the second electrode 700 may include, but are not limited to, one or more of Ag, Cr, Ti, Al, Ni, Au, Rh, and ITO. More specifically, in one embodiment, in order to improve luminous efficiency, the first electrode 600 and the second electrode 700 may be a multilayer structure composed of a contact layer, a reflective layer, and a blocking layer. The materials of the contact layer may include, but are not limited to, one or more of ITO, Rh, and Au; the materials of the reflective layer may include, but are not limited to, one or more of Al and Ag; and the materials of the blocking layer may include, but are not limited to, one or more of Ti, Au, Ni, Pt, and W.

[0063] Furthermore, the first electrode 600 and the second electrode 700 are also covered with an insulating layer 800, on which a first opening 801 is arranged that overlaps with the orthographic projection of the first electrode 600, and a second opening 802 that overlaps with the orthographic projection of the second electrode 700.

[0064] A first pad 900 and a second pad 1000 are arranged on the insulating layer 800. The first pad 900 contacts the first electrode 600 through the first opening 801, and the second pad 1000 contacts the second electrode 700 through the second opening 802.

[0065] In one embodiment, the insulating layer 800 may be made of silicon oxide or silicon nitride. In another embodiment, to improve luminous efficiency, the insulating layer 800 may be a DBR insulating structure composed of alternating layers of high refractive index and low refractive index.

[0066] The following is a detailed description, such as Figure 1 As shown, in this embodiment, the platform structure 300 includes a main body 301 and extensions 302 symmetrically arranged on both sides of the main body 301. The main body 301 extends along a first direction x, and the multiple extensions 302 are spaced apart along the first direction x, with each extension 302 extending along a second direction y. Based on this platform structure 300, multiple concave and convex regions are formed, which can significantly increase the side light-emitting area and effectively improve luminous efficiency.

[0067] In the first direction x, the platform structure 300 has a first end 303 and a second end 304 disposed opposite to each other. The first opening 801 is located near the first end 303, and the second opening 802 is located at a position corresponding to the second end 304.

[0068] Based on this structure, compared with conventional light-emitting elements, it helps to increase the extension length of the mesa structure 300 in the first direction x within the limited surface space of the substrate 100, thereby increasing the light-emitting area. At the same time, this structure does not affect the spacing between the first pad 900 and the second pad 1000. It can increase the contact area between the second pad 1000 and the second electrode 700 while keeping the spacing between the first pad 900 and the second pad 1000 unchanged, reduce the resistance voltage drop, improve the light-emitting efficiency, and help improve the heat dissipation effect. It also shortens the current path in the first direction x, so that the current can be diffused more uniformly throughout the quantum well region.

[0069] Specifically, in this embodiment, the first opening 801 is symmetrically arranged at both ends of the first end 303 in the second direction y, and the first opening 801 extends along the first direction x. Based on this structure, the space occupied in the first direction x is effectively reduced, which helps to increase the contact area between the second pad 1000 and the second electrode 700 and the light-emitting area while keeping the distance between the first pad 900 and the second pad 1000 unchanged.

[0070] Furthermore, in this embodiment, in order to maximize the contact area between the second electrode 700 and the second pad 1000, the second opening 802 includes a main body segment 8021 that overlaps with the orthographic projection of the main body 301 and a branch segment 8022 that overlaps with the orthographic projection of the plurality of extensions 302.

[0071] It should be noted that in this embodiment, the first opening 801 is symmetrically arranged at both ends of the first end 303 in the second direction y. In other embodiments, the first opening 801 located at both ends of the first end 303 may also be asymmetrically arranged. For example, the length of the first opening 801 at one end may be less than that at the other end, or the first opening 801 may be located only at one end of the first end 303 in the second direction y. However, this will result in a reduction in the contact area between the first pad 900 and the first electrode 600. The choice can be made based on actual needs.

[0072] Understandably, in this embodiment, the extension length of the first opening 801 along the first direction x can be matched with the width of the first pad 900, so as to maximize the contact area between the first pad 900 and the first electrode 600 and reduce the contact resistance while ensuring that there is sufficient spacing between the first pad 900 and the second pad 1000.

[0073] In the above embodiments, the plurality of extensions 302 of the tabletop structure 300 extend along the second direction y. In other embodiments, the extensions 302 may also extend along other directions. For example, please refer to [link to relevant documentation]. Figure 4 , Figure 4 This is a top view schematic diagram of another embodiment of the light-emitting element of this application, as shown below. Figure 4 As shown, the extension 302 can also be extended in a direction inclined to the second direction y, which can also achieve the effect of this embodiment.

[0074] It should be noted that in the above embodiments, the multiple extensions 302 located on the same side of the main body 301 are arranged parallel to each other. In other embodiments, the multiple extensions 302 located on the same side of the main body 301 may not be arranged parallel to each other. For example, the multiple extensions 302 may be arranged symmetrically with respect to the center line of the main body 301, etc., and the effects of this embodiment can be achieved.

[0075] In addition, in the above embodiments, the extension portions 302 located on both sides of the main body 301 are symmetrically arranged. In other embodiments, the extension portions 302 located on both sides of the main body 301 may also be asymmetrically arranged. For example, the extension portions 302 located on both sides of the main body 301 may also be staggered, which can also achieve the effect of this embodiment.

[0076] In the above embodiments, the extensions 302 have the same length in the second direction y; in other embodiments, in order to further increase the area of ​​the first opening 801 and thus increase the contact area between the first pad 900 and the first electrode 600, the extensions 302 may have different lengths in the second direction y. For example, please refer to... Figure 5 , Figure 5 This is a top view schematic diagram of another embodiment of the light-emitting element of this application.

[0077] like Figure 5 As shown, in this embodiment, the plurality of extensions 302 include a plurality of first extensions 302a near the first opening 801. The length of the plurality of first extensions 302a is less than the length of the other extensions, thereby forming a clearance area at the end of the platform structure 300 near the first opening 801. Due to the existence of this clearance area, the first opening 801 can extend to the clearance area, thereby further increasing the contact area between the first pad 900 and the first electrode 600.

[0078] exist Figure 5 In the embodiment shown, the lengths of the multiple first extensions 302a are consistent. In other embodiments, the lengths of the multiple first extensions 302a may not be consistent. For example, the lengths of the multiple first extensions 302a may be irregularly distributed, or gradually increased, or gradually decreased, all of which can achieve the effect of this embodiment.

[0079] For example, please refer to Figure 6 , Figure 6 This is a top view schematic diagram of another embodiment of the light-emitting element of this application. (See attached diagram.) Figure 6As shown, in this embodiment, the lengths of the plurality of first extensions 302a gradually increase along the first direction x, thereby forming a trapezoidal clearance area. Correspondingly, the first opening 801 extends into this clearance area, such that the diameter of the first opening 801 gradually decreases along the first direction x, relative to... Figure 1 The embodiment shown can also significantly increase the contact area between the first pad 900 and the first electrode 600.

[0080] For example, please refer to Figure 7 , Figure 7 This is a top view schematic diagram of another embodiment of the light-emitting element of this application. (See attached diagram.) Figure 7 As shown, in this embodiment, the lengths of the plurality of first extensions 302a gradually decrease along the first direction x, thereby forming a trapezoidal clearance area. The first opening 801 extends to this clearance area, such that the diameter of the first opening 801 gradually increases along the first direction x, relative to... Figure 1 The embodiment shown can also significantly increase the contact area between the first pad 900 and the first electrode 600.

[0081] It should be noted that, Figure 6 and Figure 7 The embodiments shown are relative to Figure 5 This helps to achieve a balance between the light-emitting area and the contact area. It is understandable that when the length of the first extension 302a becomes shorter, the light-emitting area will decrease accordingly, and the contact area between the first pad 900 and the first electrode 600 will increase accordingly. Therefore, the length of the first extension 302a can be adjusted based on actual needs to optimize the performance of the light-emitting element.

[0082] In particular, Figure 6 The length of the multiple first extensions 302a gradually increases along the first direction x, making the light-emitting area more concentrated in the middle of the chip, compared to Figure 7 The implementation method provides a more concentrated light emission, which can be selected based on actual needs.

[0083] In the above embodiments, the first electrode 600 completely covers the area of ​​the first conductivity type semiconductor layer 200 that is not covered by the mesa structure 300; in other embodiments, in order to conduct current and further prevent short circuits of the pads, openings may also be arranged on the first electrode 600.

[0084] Specifically, please refer to Figure 8 and Figure 9 , Figure 8 This is a top view schematic diagram of another embodiment of the light-emitting element of this application. Figure 9 yes Figure 8 A cross-sectional structural schematic diagram of one embodiment of the C-plane.

[0085] like Figure 8 and Figure 9 As shown, in this embodiment, the first electrode 600 is also provided with a first current guide port 601 located between the first pad 900 and the second pad 1000, and the first current guide port 601 extends along the first direction x.

[0086] By setting the first current guide port 601, on the one hand, the current can be guided in the first direction x, expanding the current uniformity; on the other hand, after being covered by the insulating layer 800, a receiving space 1200 can be formed at the first current guide port 601. During the soldering process of the first pad 900, the molten solder can flow into the receiving space 1200, preventing the solder from flowing to the area of ​​the second pad 1000, effectively preventing the first pad 900 and the second pad 1000 from contacting each other, and playing a role in avoiding short circuit.

[0087] It should be noted that in this embodiment, the width of the first current guide port 601 remains unchanged along the first direction x. In other embodiments, the width of the first current guide port 601 can also be gradually changed, such as gradually increasing, decreasing or unevenly setting along the first direction x, all of which can achieve the effect of this embodiment.

[0088] In addition, in this embodiment, the first current guide port 601 extends along the first direction x. In other embodiments, the first current guide port 601 may not extend along the first direction x. For example, it may extend along a direction inclined relative to the first direction x, which will help to further increase the volume of the accommodating space 1200.

[0089] In this embodiment, only one end of the platform structure 300 in the second direction y is provided with the first current guide port 601. In other embodiments, the platform structure 300 may be provided with the first current guide port 601 at both ends in the second direction y. The first current guide ports 601 at both ends may be arranged symmetrically or asymmetrically, and both can achieve the effect of this embodiment.

[0090] To further increase the size of the solder containment space 1200, please refer to [link / reference needed]. Figure 10 , Figure 10 yes Figure 8 A cross-sectional view of another embodiment of the C-plane.

[0091] like Figure 10 As shown, in this embodiment, a second current guide port 203 overlapping with the first current guide port 601 is also arranged on the first conductivity type semiconductor layer 200. The second current guide port 203 can further increase the solder accommodating space 1200, thereby further avoiding short circuits of the solder pads.

[0092] It should be noted that in this embodiment, the first current guide port 601 and the second current guide port 203 completely overlap, and the two can be formed simultaneously by a single etching process; in other embodiments, the first current guide port 601 and the second current guide port 203 may not completely overlap, or the first current guide port 601 may completely cover the second current guide port 203, or the second current guide port 203 may completely cover the first current guide port 601, etc. The two can also be prepared by two etching processes, and the effect of this embodiment can also be achieved.

[0093] The light-emitting element based on the above embodiments can effectively increase the light-emitting area, increase the contact area between the second pad 1000 and the second electrode 700, shorten the current path in the first direction x, and reduce the resistance voltage drop, so that the current can be diffused more evenly throughout the quantum well region, thereby improving the light-emitting efficiency and avoiding short circuits of the pads.

[0094] It will be apparent to those skilled in the art that this disclosure is not limited to the details of the exemplary embodiments described above, and that this disclosure can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of this disclosure is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within this disclosure. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0095] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A light-emitting element, characterized in that, The light-emitting element includes a substrate, a first conductivity type semiconductor layer, and a mesa structure stacked sequentially. The mesa structure includes an active layer and a second conductivity type semiconductor layer stacked sequentially in a direction away from the substrate. The light-emitting element also includes a first electrode disposed on the first conductivity type semiconductor layer in an area not covered by the mesa structure, a second electrode disposed on the mesa structure, an insulating layer covering the first electrode and the second electrode, and a first pad and a second pad disposed on the insulating layer. The tabletop structure includes a main body extending along a first direction and an extension disposed on the side of the main body. In the first direction, the tabletop structure has a first end and a second end disposed opposite to each other. The insulating layer has a first opening and a second opening that overlap with the orthographic projection of the first electrode and the second electrode, respectively. The first opening is located near the first end, and the second opening is located at a position corresponding to the second end. The first pad is in electrical contact with the first electrode through the first opening, and the second pad is in electrical contact with the second electrode through the second opening.

2. The light-emitting element according to claim 1, characterized in that, The first opening is located at one or both ends of the first end in a second direction, which is perpendicular to the first direction.

3. The light-emitting element according to claim 2, characterized in that, The first opening extends along the first direction.

4. The light-emitting element according to claim 2, characterized in that, The table structure includes a plurality of extensions spaced apart along the first direction on one or both sides of the main body. The plurality of extensions includes a plurality of first extensions adjacent to the first opening, the length of the plurality of first extensions being less than the length of the other extensions, so as to form a clearance area on the side of the table structure near the first opening, at least a portion of the first opening being located in the clearance area.

5. The light-emitting element according to claim 4, characterized in that, In the first direction, the length of the plurality of first extensions gradually increases or decreases, so that the diameter of the first opening gradually decreases or increases along the first direction.

6. The light-emitting element according to claim 1, characterized in that, The second opening includes a main body segment that overlaps with the orthographic projection of the main body portion and a branch segment that overlaps with the orthographic projection of at least one of the extension portions.

7. The light-emitting element according to claim 1, characterized in that, The first electrode is provided with a first current guide port, which is located between the first pad and the second pad.

8. The light-emitting element according to claim 7, characterized in that, A second current guide port is arranged on the first conductivity type semiconductor layer, which at least partially overlaps with the first current guide port; And / or, The first current guide port extends along the first direction.

9. The light-emitting element according to claim 1, characterized in that, The insulating layer is a DBR insulating layer composed of alternating layers of high refractive index layers and low refractive index layers; and / or, The first electrode and / or the second electrode include a contact layer, a reflective layer and a barrier layer stacked sequentially along the direction away from the substrate.

10. The light-emitting element according to claim 1, characterized in that, The light-emitting element is an ultraviolet light-emitting element.

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