Heating element assembly and aerosol generating device
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-12
- Publication Date
- 2026-08-14
AI Technical Summary
[0002]在一些现有技术示例中,气溶胶生成装置的发热体组件包括半导体组件,装置上电启动时,半导体组件产生传导热,导致降低发热体组件的稳态温差,从而增加气溶胶生成装置的能耗
[0021]本申请至少存在以下有益效果:通过N型半导体被构造成具有第一底面和第一长度的柱状体,P型半导体构造成具有第二底面和第二长度的柱状体,其中,第一长度和第二长度的长度范围均为2mm-6mm,第一底面和第二底面的表面积的面积范围均为0.5mm2-2mm2,因此,本申请能够提高发热体组件的稳态温差,从而降低气溶胶生成装置的能耗。
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Figure CN224627619U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of aerosol generation technology, and in particular to a heating element assembly and an aerosol generation device. Background Technology
[0002] In some prior art examples, the heating element component of the aerosol generating device includes a semiconductor component. When the device is powered on, the semiconductor component generates conductive heat, which reduces the steady-state temperature difference of the heating element component, thereby increasing the energy consumption of the aerosol generating device. Utility Model Content
[0003] In view of this, this application provides a heating element assembly and an aerosol generating device, which can improve the steady-state temperature difference of the heating element assembly, thereby reducing the energy consumption of the aerosol generating device.
[0004] This application provides a heating element assembly, including:
[0005] A first conductive carrier has a plurality of semiconductor components on its surface, each semiconductor component including an N-type semiconductor and a P-type semiconductor, the N-type semiconductor being configured as a column having a first bottom surface and a first length, and the P-type semiconductor being configured as a column having a second bottom surface and a second length.
[0006] Multiple second conductive carriers are located on the side of the semiconductor component opposite to the first conductive carrier, and each second conductive carrier is electrically connected to the N-type semiconductor and the P-type semiconductor of the corresponding semiconductor component;
[0007] The lengths of both the first and second lengths range from 2mm to 6mm, and the surface areas of both the first and second bottom surfaces range from 0.5mm². 2 -2mm 2 .
[0008] In some embodiments, the first length and the second length are equal.
[0009] In some embodiments, the first bottom surface and the second bottom surface are configured to have the same shape.
[0010] In some embodiments, the first bottom surface and the second bottom surface are configured as circular, rectangular, rhomboid, trapezoidal, triangular or irregular shapes.
[0011] In some embodiments, the number of semiconductor components ranges from 15 to 114.
[0012] In some embodiments, the first conductive carrier includes a flexible circuit board, on which a positive electrode connection terminal and a negative electrode connection terminal are disposed, and a plurality of semiconductor components are connected between the positive electrode connection terminal and the negative electrode connection terminal.
[0013] In some embodiments, the heating element assembly further includes a tubular carrier defining a receiving space for receiving an aerosol-generated article, the first conductive carrier being disposed around the tubular carrier.
[0014] In some embodiments, the heating element assembly further includes a fixing member disposed around the second conductive carrier.
[0015] In some embodiments, the heating element assembly further includes the temperature sensor, the sensing head of which is disposed between the second conductive carrier and the fixing member.
[0016] In some embodiments, when the fixture includes a PI film, the axial length of the PI film is greater than or equal to the axial length of the temperature sensor and less than or equal to the axial length of the tubular carrier.
[0017] In some embodiments, the heating element assembly further includes an isolator disposed between the second conductive carrier and the fixing member.
[0018] This application also provides an aerosol generating apparatus, including:
[0019] The heating element assembly as described in any embodiment of this application;
[0020] A power supply component, whose positive terminal is electrically connected to the positive terminal of the first conductive carrier and whose negative terminal is electrically connected to the negative terminal of the first conductive carrier, is configured to provide current to the heating element component. When current flows through the semiconductor component, heat generated based on the Boltzmann effect is transferred from the second conductive carrier to the first conductive carrier, generating Joule heating at both ends of the first and second conductive carriers. The Joule heating generated by the second conductive carrier is also transferred to the first conductive carrier, thereby increasing the temperature of the first conductive carrier to heat the aerosol to form the product.
[0021] This application has at least the following beneficial effects: An N-type semiconductor is constructed into a columnar body having a first bottom surface and a first length, and a P-type semiconductor is constructed into a columnar body having a second bottom surface and a second length, wherein the lengths of both the first and second lengths are in the range of 2mm-6mm, and the surface areas of both the first and second bottom surfaces are in the range of 0.5mm². 2 -2mm 2Therefore, this application can increase the steady-state temperature difference of the heating element assembly, thereby reducing the energy consumption of the aerosol generation device. Attached Figure Description
[0022] One or more embodiments are illustrated by way of example with reference numerals in the accompanying drawings. These illustrations do not constitute a limitation on the embodiments. Elements with the same reference numerals in the drawings are denoted as similar elements. Unless otherwise stated, the figures in the drawings are not to be limited by scale.
[0023] Figure 1 This is a schematic diagram of the structure of a heating element assembly provided in an embodiment of this application;
[0024] Figure 2a This is a schematic diagram of the structure of an N-type semiconductor provided in an embodiment of this application;
[0025] Figure 2b This is a schematic diagram of the structure of a P-type semiconductor provided in an embodiment of this application;
[0026] Figure 3 This is a schematic diagram of a first conductive carrier and multiple semiconductor components distributed on the first conductive carrier according to an embodiment of this application;
[0027] Figure 4 This is a schematic diagram showing the distribution of multiple second conductive carriers on a first conductive carrier according to an embodiment of this application;
[0028] Figure 5a In this embodiment of the application, the surface area of both the first bottom surface of an N-type semiconductor and the second bottom surface of a P-type semiconductor is 0.25 mm². 2 The graph shows the relationship between the thermal conductivity and length of N-type and P-type semiconductors under different temperature differences.
[0029] Figure 5b In this embodiment of the application, the surface area of both the first bottom surface of an N-type semiconductor and the second bottom surface of a P-type semiconductor is 0.5 mm². 2 The graph shows the relationship between the thermal conductivity and length of N-type and P-type semiconductors under different temperature differences.
[0030] Figure 5c The surface area of the first bottom surface of an N-type semiconductor and the second bottom surface of a P-type semiconductor provided in this application embodiment are both 1 mm². 2 The graph shows the relationship between the thermal conductivity and length of N-type and P-type semiconductors under different temperature differences.
[0031] Figure 5d The surface area of the first bottom surface of an N-type semiconductor and the second bottom surface of a P-type semiconductor provided in this application embodiment are both 2 mm². 2The graph shows the relationship between the thermal conductivity and length of N-type and P-type semiconductors under different temperature differences.
[0032] Figure 5e The surface area of both the first bottom surface of an N-type semiconductor and the second bottom surface of a P-type semiconductor provided in this application embodiment is 3 mm². 2 The graph shows the relationship between the thermal conductivity and length of N-type and P-type semiconductors under different temperature differences.
[0033] Figure 5f The surface area of both the first bottom surface of an N-type semiconductor and the second bottom surface of a P-type semiconductor provided in this application embodiment is 4 mm². 2 The graph shows the relationship between the thermal conductivity and length of N-type and P-type semiconductors under different temperature differences.
[0034] Figure 6 This is a schematic diagram of another heating element assembly provided in an embodiment of this application;
[0035] Figure 7 This is a schematic diagram of an aerosol generating device provided in an embodiment of this application. Detailed Implementation
[0036] To facilitate understanding of this application, a more detailed description of this application will be provided below in conjunction with the accompanying drawings and specific embodiments.
[0037] Please see Figure 1 , Figure 2a and Figure 2b The heating element assembly 100 provided in this application embodiment includes:
[0038] A first conductive carrier 10 has a plurality of semiconductor components 20 on its surface. Each semiconductor component 20 includes an N-type semiconductor 21 and a P-type semiconductor 22. The N-type semiconductor 21 is configured as a column with a first bottom surface 21S and a first length 21L, and the P-type semiconductor 22 is configured as a column with a second bottom surface 22S and a second length 22L.
[0039] Please refer to the following: Figure 3 The first conductive carrier 10 includes a flexible circuit board with a positive terminal 11 and a negative terminal 12. Multiple semiconductor components 20 are connected between the positive terminal 11 and the negative terminal 12.
[0040] The flexible circuit board includes a body 13, with a positive terminal 11 and / or a negative terminal 12 contacting the surface of the body 13 or embedded in the body 13.
[0041] The flexible circuit board also includes a conductive element 14, which is disposed on the surface of the body 13. The N-type semiconductor 21 and the P-type semiconductor 22 are connected in series between the positive terminal 11 and the negative terminal 12 through the conductive element 14.
[0042] In one embodiment, the conductive element 14 is a copper foil, which is a thin, continuous metal foil deposited on the substrate layer of the flexible circuit board, serving as a conductor of the flexible circuit board.
[0043] One end of the N-type semiconductor 21 and one end of the P-type semiconductor 22 in the semiconductor component 20 are both electrically connected to the first conductive carrier 10. Optionally, the N-type semiconductor 21 and the P-type semiconductor 22 of the semiconductor component 20 are fixed to the first conductive carrier 10 at intervals by welding.
[0044] In one embodiment, the flexible circuit board further includes pads, which are metal contact points on the flexible circuit board used for soldering N-type semiconductor 21 and P-type semiconductor 22, also known as solder pads. One end of the N-type semiconductor 21 and one end of the P-type semiconductor 22 in the semiconductor assembly 20 are respectively soldered to the corresponding pads.
[0045] In some embodiments, the first length 21L and the second length 22L are equal. In some further embodiments, the first bottom surface 21S and the second bottom surface 22S are configured with the same shape. In some specific embodiments, the first bottom surface 21S and the second bottom surface 22S are configured with a circular, rectangular, rhomboid, trapezoidal, triangular, or irregular shape.
[0046] like Figure 2a As shown, the N-type semiconductor 21 is constructed as a cuboid having a first base 21S and a first length 21L, wherein the first base 21S is a rectangle defined by a length 21A and a width 21B. Figure 2b As shown, the P-type semiconductor 22 is constructed as a cuboid with a second base surface 22S and a second length 22L. The second base surface 22S is a rectangle defined by a length 22A and a width 22B. The first base surface 21S and the second base surface 22S are equal, and the first length 21L and the second length 22L are equal, meaning that the N-type semiconductor 21 and the P-type semiconductor 22 have the same volume, and are constructed as identical cuboids.
[0047] In some other embodiments, the N-type semiconductor 21 and the P-type semiconductor 22 are constructed as identical cylinders, i.e., the first base surface 21S and the second base surface 22S are equal circles, and the first length 21L and the second length 22L are equal. In still other embodiments, the N-type semiconductor 21 and the P-type semiconductor 22 are constructed as identical trapezoidal bodies, i.e., the first base surface 21S and the second base surface 22S are equal trapezoids, and the first length 21L and the second length 22L are equal.
[0048] Multiple second conductive carriers 30 are located on the side of the semiconductor component 20 away from the first conductive carrier 10, and each second conductive carrier 30 is electrically connected to the N-type semiconductor 21 and the P-type semiconductor 22 of the corresponding semiconductor component 20.
[0049] according to Figure 1 , Figure 3 and Figure 4 As shown, one end of the N-type semiconductor 21 and one end of the P-type semiconductor 22 in the semiconductor component 20 are electrically connected to the first conductive carrier 10, and the other ends of the N-type semiconductor 21 and the P-type semiconductor 22 in the semiconductor component 20 are electrically connected through a second conductive carrier 30. In one embodiment, the second conductive carrier 30 includes a copper sheet. The N-type semiconductor 21 and the P-type semiconductor 22 in the semiconductor component 20 are electrically connected through the copper sheet.
[0050] When the heating element assembly 100 is operating, current flows through the semiconductor component 20. Heat generated based on the Boltzmann effect is transferred from the second conductive carrier 30 to the first conductive carrier 10, creating a temperature difference between the first conductive carrier 10 and the second conductive carrier 30. The more heat is lost from the second conductive carrier 30, the more heat is gained from the first conductive carrier 10. Therefore, the second conductive carrier 30 is the heat supply end of the heating element assembly 100, and the first conductive carrier 10 is the heat receiving end of the heating element assembly 100.
[0051] The lengths of the first length 21L and the second length 22L are both between 2mm and 6mm, and the surface areas of the first bottom surface 21S and the second bottom surface 22S are both between 0.5mm². 2 -2mm 2 .
[0052] exist Figure 2a and Figure 2b On this basis, Figure 5a The surface area of both the first bottom surface 21S of the N-type semiconductor 21 and the second bottom surface 22S of the P-type semiconductor 22 is 0.25 mm². 2 The graph shows the relationship between the thermal conductivity and length of N-type semiconductor 21 and P-type semiconductor 22 under different temperature differences. Figure 5b The surface area of both the first bottom surface 21S of the N-type semiconductor 21 and the second bottom surface 22S of the P-type semiconductor 22 is 0.5 mm. 2 The graph shows the relationship between the thermal conductivity and length of N-type semiconductor 21 and P-type semiconductor 22 under different temperature differences. Figure 5c The surface area of the first bottom surface 21S of the N-type semiconductor 21 and the second bottom surface 22S of the P-type semiconductor 22 are both 1 mm². 2The graph shows the relationship between the thermal conductivity and length of N-type semiconductor 21 and P-type semiconductor 22 under different temperature differences. Figure 5d The surface area of the first bottom surface 21S of the N-type semiconductor 21 and the second bottom surface 22S of the P-type semiconductor 22 are both 2 mm. 2 The graph shows the relationship between the thermal conductivity and length of N-type semiconductor 21 and P-type semiconductor 22 under different temperature differences. Figure 5e The surface area of the first bottom surface 21S of the N-type semiconductor 21 and the second bottom surface 22S of the P-type semiconductor 22 are both 3 mm². 2 The graph shows the relationship between the thermal conductivity and length of N-type semiconductor 21 and P-type semiconductor 22 under different temperature differences. Figure 5f The surface area of the first bottom surface 21S of the N-type semiconductor 21 and the second bottom surface 22S of the P-type semiconductor 22 are both 4 mm². 2 The graph shows the relationship between the thermal conductivity and length of N-type semiconductor 21 and P-type semiconductor 22 under different temperature differences.
[0053] from Figures 5a to 5f As can be seen in any of the attached figures, when the bottom surface areas of the N-type semiconductor 21 and the P-type semiconductor 22 are equal, the heat conduction of the N-type semiconductor 21 and the P-type semiconductor 22 decreases as their lengths increase. Figures 5a to 5f As shown in any of the attached figures, under different temperature differences, the lengths of the N-type semiconductor 21 and the P-type semiconductor 22 reach an inflection point of approximately 2 mm, at which point the heat conduction of the N-type semiconductor 21 and the P-type semiconductor 22 begins to decrease rapidly. Considering that the N-type semiconductor 21 and the P-type semiconductor 22 are prone to breakage once their lengths reach a certain limit, which is detrimental to the miniaturization design of portable aerosol generation devices, it is preferable to select a length range of 2 mm to 6 mm for the N-type semiconductor 21 and the P-type semiconductor 22. Within this length range, the heat conduction of the N-type semiconductor 21 and the P-type semiconductor 22 is kept at a low level, while also ensuring that the lengths of the N-type semiconductor 21 and the P-type semiconductor 22 are reasonable, not easily broken, and conducive to the miniaturization design of portable aerosol generation devices.
[0054] from Figures 5a to 5f It can be seen that, when the lengths of N-type semiconductor 21 and P-type semiconductor 22 are equal, the heat conduction of N-type semiconductor 21 and P-type semiconductor 22 increases as their bottom surface area increases. From... Figures 5a to 5f It can be seen that when the lengths of the N-type semiconductor 21 and the P-type semiconductor 22 are in the range of 2mm-6mm, the heat conduction of the N-type semiconductor 21 and the P-type semiconductor 22 needs to be less than 15mJ under different temperature differences. At this time, the bottom surface area of the N-type semiconductor 21 and the P-type semiconductor 22 should be less than 2mm². 2Considering that the manufacturing process becomes more difficult when the bottom surface area of the N-type semiconductor 21 and P-type semiconductor 22 becomes too small, and that the Joule heat generated at the cold and hot ends of the N-type semiconductor 21 and P-type semiconductor 22 increases, leading to increased energy consumption of the aerosol generation device, it is preferable that when the length of the N-type semiconductor 21 and P-type semiconductor 22 is in the range of 2mm-6mm, the bottom surface area of both the N-type semiconductor 21 and P-type semiconductor 22 is selected to be within the range of 0.5mm². 2 -2mm 2 Within this area, it is possible to ensure that the heat conduction of N-type semiconductor 21 and P-type semiconductor 22 is within a low range, while also ensuring that the bottom surface size of N-type semiconductor 21 and P-type semiconductor 22 is reasonable, reducing the difficulty of the manufacturing process and reducing the energy consumption of the aerosol generation device.
[0055] In summary, the heat conduction of N-type semiconductor 21 and P-type semiconductor 22 is in a low range, which can reduce the heat loss at the hot end of N-type semiconductor 21 and P-type semiconductor 22, thereby increasing the steady-state temperature difference of the heating element assembly and reducing the energy consumption of the aerosol generation device.
[0056] Based on any of the above embodiments, please refer to Figure 6 The heating element assembly 100 also includes one or more of the following: a tubular carrier 40, a fixing member 50, a temperature sensor 60, an insulating member 70, and a conductive lead 80.
[0057] The tubular carrier 40 defines a receiving space 401 for receiving aerosol-generated articles, and the first conductive carrier 10 is disposed around the tubular carrier 40.
[0058] As used herein, the term "aerosol-generating article" refers to an article comprising an aerosol-forming matrix that, when heated, releases volatile compounds that can form aerosols. In one embodiment, the aerosol-generating article is removably coupled to the heating element assembly 100.
[0059] Aerosol forming matrices can include solid aerosol forming matrices. Solid aerosol forming matrices can include tobacco-containing materials containing volatile tobacco flavor compounds that are released from the aerosol forming matrix upon heating. Solid aerosol forming matrices can also include non-tobacco materials. Solid aerosol forming matrices can include both tobacco-containing and non-tobacco-containing materials.
[0060] The aerosol-forming matrix may include a liquid aerosol-forming matrix. The liquid aerosol-forming matrix may contain a liquid containing tobacco-containing substances with volatile tobacco aroma components, or it may be a liquid containing non-tobacco substances. The liquid aerosol-forming matrix may contain water, solvents, ethanol, plant extracts, fragrances, flavorings, or vitamin mixtures, etc. Fragrances may include, but are not limited to, areca nut extract, menthol, peppermint, spearmint oil, and various fruit flavoring components. Flavorings may contain ingredients that can provide the user with various aromas or flavors. Vitamin mixtures may be mixtures containing at least one of vitamins A, B, C, and E, but are not limited to.
[0061] The containment space 401 extends radially along the receiving direction of the aerosol-generated product.
[0062] The first conductive carrier 10 is disposed in close contact with the tubular carrier 40, so the tubular carrier 40 can support the first conductive carrier 10 and maintain the first conductive carrier 10 in a preset shape. The outer surface of the tubular carrier 40 and / or the surface of the first conductive carrier 10 facing the tubular carrier 40 can be coated with adhesive, so that the first conductive carrier 10 can be fixed to the tubular carrier 40 by adhesive.
[0063] The first conductive carrier 10 can be bent. In one embodiment, the first conductive carrier 10 is bent close to the outer surface of the tubular carrier 40. Preferably, the first conductive carrier 10 is closed around the tubular carrier 40. In this case, ignoring the thickness of the first conductive carrier 10, the area of the side surface of the first conductive carrier 10 where the semiconductor component 20 is disposed is equal to the area of the outer surface of the tubular carrier 40. The temperature field of the side surface of the first conductive carrier 10 where the semiconductor component 20 is disposed can be correspondingly conducted to the inner surface of the tubular carrier 40, and heat is transferred through the contact between the inner surface of the tubular carrier 40 and the aerosol generating article. Alternatively, the gap between the inner surface of the tubular carrier 40 and the aerosol generating article is used to heat the air flowing through the gap through the heat of the inner surface of the tubular carrier 40, thereby heating the aerosol generating article through the heated air. As an example, the gap is no greater than 0.5 mm, preferably no greater than 0.15 mm. In one embodiment, after the first conductive carrier 10 is bent close to the outer surface of the tubular carrier 40, its two ends are not closed.
[0064] Since the area of the side surface of the first conductive carrier 10 where the semiconductor component 20 is disposed is equal to the area of the outer surface of the tubular carrier 40, and the area of the outer surface of the tubular carrier 40 is not much different from the area of the outer surface of the aerosol generating product, the area of the side surface of the first conductive carrier 10 where the semiconductor component 20 is disposed is roughly determined due to the limitations of the specifications of common aerosol generating products. It can accommodate 15-114 semiconductor components 20, that is, the number of semiconductor components 20 ranges from 15 to 114.
[0065] When the aerosol-generating article is received, the aerosol-generating article placed in the receiving space 401 is at least in contact with the tubular carrier 40. The tubular carrier 40 is a heat conductor, which can absorb heat from the first conductive carrier 10 and transfer at least a portion of the absorbed heat to the aerosol-generating article.
[0066] The tubular carrier 40 has a thermal conductivity greater than or equal to 10 W / (m·K). Suitable tubular carriers 40 include, but are not limited to, at least one or more of the following: metal, graphite, graphene, diamond, silicon carbide, aluminum nitride, or thermally conductive polymers. The metals include, but are not limited to, one or more of the following: silver, copper, gold, aluminum, tungsten, zinc, molybdenum, nickel, iron, platinum, ferrite, alloys, or stainless steel. The thermally conductive polymers include, but are not limited to, thermally conductive silicone or thermally conductive grease. By giving the tubular carrier 40 a high thermal conductivity, the efficiency of heat transfer from the heat pipe to the aerosol generation product is improved.
[0067] The thickness of the tubular carrier 40 can be less than or equal to 0.2 mm to reduce the heat consumption of the tubular carrier 40 itself, so that more of the heat transferred from the first conductive carrier 10 to the tubular carrier 40 can be transferred to the aerosol generating product by the tubular carrier 40, thereby improving the heat utilization rate.
[0068] In some embodiments, the tubular carrier 40 may be omitted. In this case, the inner wall surface of the first conductive carrier 10 defines at least a portion of the boundary of the receiving space 401. Alternatively, at least a portion of the first conductive carrier 10 is configured to be tubular, such that when receiving an aerosol-generating article, at least a portion of the aerosol-generating article is surrounded by the tubular first conductive carrier 10.
[0069] In other embodiments, at least a portion of the first conductive carrier 10 contacts the side surface of the aerosol-generating article to increase the heat transfer efficiency between the first conductive carrier 10 and the side surface of the aerosol-generating article through direct contact, thereby helping to reduce losses.
[0070] A fixing member 50 is disposed around the second conductive carrier 30. In one embodiment, the fixing member 50 comprises a PI film or aerogel.
[0071] Temperature sensor 60, the sensing head 61 of temperature sensor 60 is disposed between the second conductive carrier 30 and the fixing member 50.
[0072] The fixing member 50 is used to fix the temperature sensor 60 at a corresponding position on the second conductive carrier 30, so that the temperature sensor 60 detects the temperature of the heat supply end of the heating element assembly 100. It is understood that the fixing member 50 is not limited to the manner provided in this embodiment.
[0073] like Figure 6As shown, the temperature sensor 60 also includes a lead 62 electrically connected to the sensing head 61. The lead 62 is also electrically connected to the main control board, used to output the data collected by the sensing head 61 to the main control board for processing. The main control board can control the current or voltage supplied by the power supply component to the heating element assembly 100 according to this data, thereby regulating the temperature of the tubular carrier 40, ensuring that the tubular carrier 40 fully heats the aerosol-generating product, and preventing the aerosol-generating product from burning. The temperature sensor 60 can be a thermocouple or a thermistor; its type is not limited here.
[0074] Preferably, when the fixing member 50 includes a PI film, the axial length of the PI film is greater than or equal to the axial length of the temperature sensor 60 and less than or equal to the axial length of the tubular carrier 40.
[0075] The axial length of the PI film is greater than or equal to the axial length of the temperature sensor 60, which can fix the temperature sensor 60. In addition, the axial length of the PI film is less than or equal to the axial length of the tubular carrier 40, which can reduce the heat absorbed by the PI film and improve the accuracy of the detection results of the temperature sensor 60.
[0076] The isolator 70 is disposed between the second conductive carrier 30 and the fixing member 50.
[0077] In one embodiment, the isolator 70 includes a PI film. The PI film provides electrical isolation, effectively preventing short circuits between the second conductive carrier 30 and the temperature sensor 60, thus improving the safety of the heating element assembly 100. It is understood that the isolator 70 is not limited to the configuration provided in this embodiment.
[0078] The conductive lead 80 is used to connect the power supply assembly, with one conductive lead connected to the positive terminal 21 and the other conductive lead connected to the negative terminal 22.
[0079] Please see Figure 7 An aerosol generating apparatus 1 provided in this application includes: a heating element assembly 100 as in any embodiment of this application; and a power supply assembly 200, the positive terminal of which is electrically connected to the positive terminal 11 of the first conductive carrier 10, and the negative terminal of which is electrically connected to the negative terminal 12 of the first conductive carrier 10. The power supply assembly 200 is configured to provide current to the heating element assembly 100, so that when current flows through the semiconductor assembly 20, heat generated based on the Boltter effect is transferred from the second conductive carrier 30 to the first conductive carrier 10, generating Joule heat at both ends of the first conductive carrier 10 and the second conductive carrier 30, and the Joule heat generated by the second conductive carrier 30 is also transferred to the first conductive carrier 10, thereby raising the temperature of the first conductive carrier 10 to heat the aerosol generating product.
[0080] The heat composition of the heating element assembly 100 includes: stored heat Qh, Bolte heat Qpi, hot-end Joule heat Qrh, cold-end Joule heat Qrc, radiant heat Qk, transfer heat Qj, Joule heat Qn, and Joule heat Qp.
[0081] The stored heat Qh is the heat stored in the tubular carrier 40.
[0082] The Boltzmann heat Qpi is the heat generated based on the Boltzmann effect and can be calculated using the Boltzmann formula. The Boltzmann formula is: Qpi = |Πn – Πp| * I, where Qpi is the Boltzmann heat, Πn and Πp are the Boltzmann coefficients of the N-type semiconductor 21 and the P-type semiconductor 22 respectively, and I is the magnitude of the current supplied by the power supply component 200 to the heating element component 100, i.e., the operating current flowing through the heating element component 100.
[0083] Joule heat at the hot end, Qrh, is the Joule heat generated by the contact impedance and line impedance at the hot end. Joule heat at the cold end, Qrc, is the Joule heat generated by the contact impedance and line impedance at the cold end. Radiant heat, Qk, is the heat radiated from the hot end to the cold end. Transfer heat, Qj, is the heat transferred from the cold end through the N-type semiconductor, P-type semiconductor, and air. Joule heat, Qn, is the Joule heat generated by the N-type semiconductor itself. Joule heat, Qp, is the Joule heat generated by the P-type semiconductor itself.
[0084] When thermal equilibrium is reached, the heat transfer directions of the heating element assembly 100 are as follows: Bolte heat Qpi is transferred unidirectionally from the outside to the inside; radiant heat Qk, conductive heat Qj, Joule heat Qn, and Joule heat Qp are transferred unidirectionally from the inside to the outside; and hot-end Joule heat Qrh and cold-end Joule heat Qrc are transferred bidirectionally. A constant temperature difference exists between the heat-providing end and the heat-receiving end of the heating element assembly 100; the tubular carrier 40 is also used to store the energy from the temperature rise of the first conductive carrier 10.
[0085] It should be noted that the preferred embodiments of this application are given in the specification and accompanying drawings, but are not limited to the embodiments described in this specification. Furthermore, those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.
Claims
1. A heat generating body assembly characterized by comprising: include: A first conductive carrier has a plurality of semiconductor components on its surface, each semiconductor component including an N-type semiconductor and a P-type semiconductor, the N-type semiconductor being configured as a column having a first bottom surface and a first length, and the P-type semiconductor being configured as a column having a second bottom surface and a second length. Multiple second conductive carriers are located on the side of the semiconductor component opposite to the first conductive carrier, and each second conductive carrier is electrically connected to the N-type semiconductor and the P-type semiconductor of the corresponding semiconductor component; Wherein, the length range of the first length and the second length is 2mm-6mm, the area range of the surface area of the first bottom surface and the second bottom surface is 0.5mm 2 -2mm 2 .
2. The heat generating body assembly according to claim 1, wherein The first length and the second length are equal.
3. The heat generating body assembly according to claim 1, wherein The first bottom surface and the second bottom surface are constructed to have the same shape.
4. The heat generating body assembly according to claim 3, wherein The first and second base surfaces are constructed as circles, rectangles, rhombuses, trapezoids, or triangles.
5. The heat generating body assembly according to claim 1, wherein The number of semiconductor components ranges from 15 to 114.
6. The heat generating body assembly according to claim 1, wherein The first conductive carrier includes a flexible circuit board, on which a positive electrode connection terminal and a negative electrode connection terminal are provided, and a plurality of semiconductor components are connected between the positive electrode connection terminal and the negative electrode connection terminal.
7. The heat generating body assembly according to any one of claims 1 to 6, wherein The heating element assembly further includes a tubular carrier defining a receiving space for receiving aerosol-generated articles, wherein the first conductive carrier is disposed around the tubular carrier.
8. The heat generating body assembly according to claim 7, wherein The heating element assembly also includes a fixing member arranged around the second conductive carrier.
9. The heat generating body assembly according to claim 8, wherein The heating element assembly also includes a temperature sensor, the sensing head of which is disposed between the second conductive carrier and the fixing member.
10. The heat generating body assembly according to claim 9, wherein When the fixture includes a PI film, the axial length of the PI film is greater than or equal to the axial length of the temperature sensor and less than or equal to the axial length of the tubular carrier.
11. The heat generating body assembly according to claim 8, wherein The heating element assembly further includes an isolation element disposed between the second conductive carrier and the fixing element.
12. An aerosol-generating device comprising: include: The heating element assembly as described in any one of claims 1-11; A power supply component, whose positive terminal is electrically connected to the positive terminal of the first conductive carrier and whose negative terminal is electrically connected to the negative terminal of the first conductive carrier, is configured to provide current to the heating element component. When current flows through the semiconductor component, heat generated based on the Boltzmann effect is transferred from the second conductive carrier to the first conductive carrier, generating Joule heating at both ends of the first and second conductive carriers. The Joule heating generated by the second conductive carrier is also transferred to the first conductive carrier, thereby increasing the temperature of the first conductive carrier to heat the aerosol to form the product.