An MTS gas mixing device for silicon carbide deposition equipment
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-27
- Publication Date
- 2026-08-14
AI Technical Summary
[0004]本实用新型为了解决现有碳化硅薄膜沉积不均匀的技术问题,提出了一种用于将MTS与H2充分混合后进入沉积室反应的MTS混气装置
1、本实用新型的小孔、第一进气管、第二进气管和第一管件相互配合,使MTS气体与H2均从本实用新型混气装置的下方进入外管组件,混合后从本实用新型混气装置的上方进入沉积室。因此,MTS气体与H2在第一管件外侧壁与外管组件内侧壁之间的空间能够充分混合,并通过在第二进气管与沉积室之间设置有浮子流量计,控制进入沉积室的H2与MTS气体的混合气体的流量,从而确保每路进入沉积内的混合气体的流量一致,进而提高碳化硅薄膜沉积的均匀性。
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Figure CN224633549U_ABST
Abstract
Description
Technical Field
[0001] This invention provides an MTS gas mixing device for silicon carbide deposition equipment, belonging to the technical field of carbon-based material production equipment. Background Technology
[0002] The primary production method for true silicon carbide semiconductor devices is chemical vapor deposition (CVD), due to its advantages of simple equipment, fast growth rate, and relatively stable growth. Currently, commercially available silicon carbide CVD equipment mainly consists of vertical or horizontal wall-heated CVD reactors. However, both traditional vertical and horizontal reactors present several key challenges: 1. All reactant gas and carrier gas inlets are located in the same position and are transported to the substrate surface with the main gas flow, making it difficult to control the carbon-silicon ratio and deposition uniformity on the substrate surface; Second, the reactor cylinder has a large volume, occupies a large area, has a high equipment manufacturing cost, and has a low equipment utilization rate. Third, the reactant gas flow states of each substrate in the reactor are different, the substrate growth quality and deposition rate are different, and the thickness and quality of the produced crystals vary greatly. Fourth, premature mixing of reaction gases leads to severe twinning crystallization and poor reactor sustainability.
[0003] Based on this, Chinese invention patent (CN115537769A) proposes a silicon carbide chemical vapor deposition method and reactor. In the silicon carbide deposition process, by placing the substrate in a separate reaction chamber, the residence time of the reactant gas on the substrate surface is increased, while the uniformity of gas flow distribution is improved, thereby effectively increasing the silicon carbide deposition rate and uniformity. However, when MTS is delivered to the deposition chamber in gaseous form and then subjected to temperature treatment to form the deposited silicon carbide film, the amount of H2 contained in the MTS gas bubbling from the bubble tank is insufficient. To increase the H2 content and ensure sufficient reaction of the MTS, H2 needs to be introduced again to mix with the MTS. Utility Model Content
[0004] In order to solve the technical problem of uneven silicon carbide thin film deposition, this invention proposes an MTS mixing device for thoroughly mixing MTS and H2 before entering the deposition chamber for reaction.
[0005] To solve the above-mentioned technical problems, the technical solution adopted by this utility model is as follows: an MTS gas mixing device for silicon carbide deposition equipment, including an inner tube assembly, the inner tube assembly including a first pipe fitting, the first pipe fitting being fitted with an outer tube assembly, and a certain space being reserved between the inner side wall of the outer tube assembly and the outer side wall of the first pipe fitting. The outer pipe assembly is detachably and fixedly connected to the first pipe fitting via a connector. The outer pipe assembly, the first pipe fitting, and the connector are coaxially arranged, and the air inlet end of the first pipe fitting protrudes from the end of the outer pipe assembly. A clamping element is detachably connected to the end of the fixing part on the first pipe fitting away from the connector. The outer tube assembly is also integrally connected with several first air inlet pipes and several second air inlet pipes. The first air inlet pipes and the second air inlet pipes are arranged opposite to each other, and the multiple second air inlet pipes are arranged opposite to multiple small holes opened on the first tube. The end of the second air inlet pipe furthest from the outer pipe assembly is connected to the sedimentation chamber, and a float flow meter is also installed between the second air inlet pipe and the sedimentation chamber. A heating device is also fitted on the outer wall of the second air intake pipe.
[0006] Furthermore, a plurality of first sealing elements are fixedly connected at the mating surfaces of the fixing part, the clamping element and the connecting element, and a gasket is fixed between each pair of first sealing elements.
[0007] Furthermore, multiple first air intake pipes are arranged in a linear array, and multiple second air intake pipes are arranged in a linear array.
[0008] Furthermore, the axes of the first intake pipe, the second intake pipe, the orifice, the first pipe fitting, and the outer pipe assembly are all located in the same plane.
[0009] Furthermore, a second sealing element is fixedly connected to the mating surface of the connector and the outer tube assembly.
[0010] Furthermore, both the first and second seals are made of sealing rings.
[0011] Furthermore, the clamping component is a clamping bolt.
[0012] Furthermore, the axis of the first intake pipe is parallel to the axis of the second intake pipe.
[0013] Furthermore, the heating device uses a heating belt.
[0014] Furthermore, flanges are used for the connectors.
[0015] The advantages of this utility model over the prior art are as follows: 1. The small hole, first air inlet pipe, second air inlet pipe, and first pipe fitting of this utility model cooperate with each other to allow MTS gas and H2 to enter the outer pipe assembly from below the mixing device of this utility model, and after mixing, enter the deposition chamber from above the mixing device of this utility model. Therefore, the space between the outer wall of the first pipe fitting and the inner wall of the outer pipe assembly can be fully mixed. By installing a float flow meter between the second air inlet pipe and the deposition chamber, the flow rate of the mixed gas of H2 and MTS gas entering the deposition chamber is controlled, thereby ensuring that the flow rate of the mixed gas entering the deposition chamber is consistent in each path, thus improving the uniformity of silicon carbide thin film deposition.
[0016] 2. This utility model improves the uniformity of silicon carbide thin film deposition by installing a heating device on the outer wall of the second air inlet pipe to prevent MTS gas from condensing due to low temperature.
[0017] 3. The outer tube assembly and the first tube are detachably and fixedly connected by a connector. A clamping member is detachably connected to the end of the connector away from the first tube. A first sealing member is fixedly connected to the mating surface of the connector, the first tube, and the clamping member. This facilitates cleaning and maintenance while ensuring the sealing performance of the inner tube assembly and the outer tube assembly. Attached Figure Description
[0018] The present invention will be further described below with reference to the accompanying drawings: Figure 1 This is a cross-sectional view of the MTS gas mixing device for silicon carbide deposition equipment according to the present invention; Figure 2 for Figure 1 An enlarged schematic diagram of part A in the middle; Figure 3 for Figure 1 A schematic diagram of the method in Part B; In the figure: 1 is the outer tube assembly, 2 is the fixing part, 3 is the gasket, 4 is the clamping part, 5 is the first sealing part, 6 is the heating device, 7 is the float flow meter, 8 is the first pipe fitting, 9 is the air inlet end, 10 is the first air inlet pipe, 11 is the second air inlet pipe, 12 is the small hole, 13 is the connector, and 14 is the second sealing part. Detailed Implementation
[0019] In this utility model, unless otherwise stated, directional terms such as "upper," "lower," "top," and "bottom" are generally used in relation to the direction shown in the accompanying drawings, or in relation to the vertical, perpendicular, or gravitational direction of the component itself; similarly, for ease of understanding and description, "inner" and "outer" refer to the inner and outer contours of each component itself, but the above directional terms are not used to limit this utility model.
[0020] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.
[0021] like Figures 1 to 3 As shown, this utility model provides an MTS gas mixing device for silicon carbide deposition equipment, including an inner pipe assembly. The inner pipe assembly includes a first pipe fitting 8, and an outer pipe assembly 1 is fitted over the first pipe fitting 8. A certain space is reserved between the inner side wall of the outer pipe assembly 1 and the outer side wall of the first pipe fitting 8. Both ends of the outer pipe assembly 1 are detachably and fixedly connected to the fixing parts 2 on the first pipe fitting 8 via connectors 13. The two fixing parts 2 are detachably and fixedly connected to the two ends of the first pipe fitting 8. The connectors 13 are flanges. The two air inlet ends 9 of the first pipe fitting 8 protrude from the two ends of the outer pipe assembly 1. The outer pipe assembly 1, the first pipe fitting 8, and the connectors 13 are coaxially arranged.
[0022] The end of the fixing part 2 away from the connector 13 is detachably connected to a clamping member. Under the action of the clamping member, the first pipe 8, the connector 13 and the outer pipe assembly 1 are fixedly connected together.
[0023] In this embodiment, the clamping element is a clamping bolt, which is threaded onto the first pipe fitting 8. By disassembling the clamping element, the outer pipe assembly 1 can be removed from the first pipe fitting 8, facilitating cleaning and maintenance.
[0024] A plurality of first sealing elements 5 are fixedly connected to the mating surfaces of the fixing part 2, the clamping element, and the connecting part 13. Gaskets 3 are fixed between each pair of first sealing elements 5. Second sealing elements 14 are also fixedly connected to the mating surfaces of the connecting part 13 and the outer tube assembly 1. The first sealing elements 5, second sealing elements 14, gaskets 3, and clamping elements cooperate to tightly connect the first tube 8 and the outer tube assembly 1, ensuring the sealing performance at the connection point. In this embodiment, the first sealing elements 5 and second sealing elements 14 are sealing rings, and two first sealing elements 5 are fixedly connected to the mating surfaces of the connecting part 13 and the clamping element.
[0025] The first pipe fitting 8 has several small holes 12. In this embodiment, six small holes 12 are provided. The multiple small holes 12 are arranged in a linear array, and the straight line containing the multiple small holes 12 is parallel to the diameter of the first pipe fitting 8.
[0026] The outer pipe assembly 1 is integrally connected with several first air intake pipes 10 and several second air intake pipes 11, which are arranged opposite to each other. Specifically, the first air intake pipes 10 are located below the outer pipe assembly 1, and the second air intake pipes 11 are located above the outer pipe assembly 1, with the axes of the first air intake pipes 10 and the second air intake pipes 11 being parallel to each other. The multiple first air intake pipes 10 are arranged in a linear array, and the multiple second air intake pipes 11 are arranged in a linear array.
[0027] The first air intake pipe 10 cooperates with the small hole 12, which is located below the first pipe fitting 8. The first air intake pipe 10 is used to transport H2, and the small hole 12 is used to connect the first pipe fitting 8 and the outer pipe assembly 1. In this embodiment, there are two first air intake pipes 10 and six second air intake pipes 11.
[0028] The second air inlet pipe 11 is arranged opposite to the small hole 12. The end of the second air inlet pipe 11 away from the outer pipe assembly 1 is connected to the deposition chamber and is used to transport the fully mixed H2 and MTS gas to the deposition chamber. A float flow meter 7 is also fixedly connected between the second air inlet pipe 11 and the deposition chamber to control the flow rate of the mixed H2 and MTS gas entering the deposition chamber. Figure 1 The dashed line represents MTS gas, and the dotted line represents H2.
[0029] A heating device 6 is also fitted on the outer wall of the second air intake pipe 11. In this embodiment, the heating device 6 is a heating belt.
[0030] Furthermore, the axes of the first intake pipe 10, the second intake pipe 11, the small hole 12, the first pipe fitting 8, and the outer pipe assembly 1 are located in the same plane.
[0031] The small hole 12 and the second air inlet pipe 11 of this invention allow both MTS gas and H2 to enter the outer pipe assembly 1 from below the mixing device, and after mixing, enter the deposition chamber from above. Therefore, the space between the outer wall of the first pipe 8 and the inner wall of the outer pipe assembly 1 can be fully mixed. In addition, the mixed MTS gas and H2, under the action of the heating device 6, can effectively prevent the MTS gas from condensing due to excessively low temperature when passing through the second air inlet pipe 11.
[0032] The working principle of this utility model: In use, MTS gas enters the first pipe 8 from both ends under a preset pressure. Since the first pipe 8 has several small holes 12, the MTS gas enters the space between the outer wall of the first pipe 8 and the inner wall of the outer pipe assembly 1 through the small holes 12. At the same time, H2 enters the space between the outer wall of the first pipe 8 and the inner wall of the outer pipe assembly 1 from the first inlet pipe 10 under a preset pressure. Since both MTS gas and H2 enter the outer pipe assembly 1 from below the mixing device of this utility model, the mixed H2 and MTS gas enter the deposition chamber through the second inlet pipe 11. The gas flow rate in each second inlet pipe 11 is controlled by the float flow meter 7, thereby ensuring that the flow rate of the mixed gas entering the deposition chamber is consistent, so that the mixed gas of MTS gas and H2 entering the deposition chamber is more uniform, thereby improving the uniformity of silicon carbide thin film deposition.
[0033] Regarding the specific structure of this utility model, it should be noted that the connection relationships between the various component modules adopted in this utility model are definite and achievable. Except as specifically described in the embodiments, their specific connection relationships can bring about corresponding technical effects and solve the technical problems proposed by this utility model without relying on the execution of corresponding software programs. The models of the components, modules, and specific components appearing in this utility model, the connection methods between them, and the conventional usage methods and expected technical effects brought about by the above-mentioned technical features, unless specifically described, are all publicly disclosed content in patents, journal articles, technical manuals, technical dictionaries, and textbooks that can be obtained by those skilled in the art before the application date, or belong to conventional technology, common knowledge, and other existing technologies in this field. There is no need to elaborate, which makes the technical solution provided in this case clear, complete, and achievable, and can reproduce or obtain corresponding physical products based on this technical means.
[0034] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this utility model, and are not intended to limit it. Although the utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this utility model.
Claims
1. An MTS gas mixing device for a silicon carbide deposition apparatus, characterized by: The inner tube assembly includes a first tube (8), and an outer tube assembly (1) is provided on the outer sleeve of the first tube (8). A certain space is reserved between the inner side wall of the outer tube assembly (1) and the outer side wall of the first tube (8). The outer pipe assembly (1) is detachably and fixedly connected to the first pipe (8) via the connector (13). The outer pipe assembly (1), the first pipe (8) and the connector (13) are coaxially arranged. The air inlet end (9) of the first pipe (8) protrudes from the end of the outer pipe assembly (1). A clamping element is detachably connected to the end of the fixing part (2) on the first pipe fitting (8) away from the connector (13); The outer pipe assembly (1) is also integrally connected with several first air inlet pipes (10) and several second air inlet pipes (11). The first air inlet pipes (10) and the second air inlet pipes (11) are arranged opposite to each other, and the multiple second air inlet pipes (11) are arranged opposite to the multiple small holes (12) opened on the first pipe fitting (8). The end of the second air inlet pipe (11) away from the outer pipe assembly (1) is connected to the sedimentation chamber, and a float flow meter (7) is also installed between the second air inlet pipe (11) and the sedimentation chamber. A heating device (6) is also fitted on the outer wall of the second air intake pipe (11).
2. The MTS gas mixing device for a silicon carbide deposition apparatus according to claim 1, characterized by: Several first sealing elements (5) are fixedly connected at the mating surfaces of the fixing part (2), the clamping part and the connecting part (13), and a gasket (3) is fixed between each pair of first sealing elements (5).
3. The MTS gas mixing device for a silicon carbide deposition apparatus according to claim 1, characterized by: Multiple first air intake pipes (10) are arranged in a linear array, and multiple second air intake pipes (11) are arranged in a linear array.
4. The MTS gas mixing device for a silicon carbide deposition apparatus according to claim 1, characterized by: The axes of the first intake pipe (10), the second intake pipe (11), the small hole (12), the first pipe fitting (8), and the outer pipe assembly (1) are located in the same plane.
5. The MTS gas mixing device for a silicon carbide deposition apparatus according to claim 2, characterized by: A second sealing element (14) is also fixedly connected to the mating surface of the connector (13) and the outer tube assembly (1).
6. The MTS gas mixing device for a silicon carbide deposition apparatus according to claim 1, characterized by: Both the first seal (5) and the second seal (14) are made of sealing rings.
7. The MTS gas mixing device for a silicon carbide deposition apparatus according to claim 5, characterized by: The clamping component is a clamping bolt.
8. The MTS gas mixing device for a silicon carbide deposition apparatus according to claim 1, characterized by: The axis of the first intake pipe (10) is parallel to the axis of the second intake pipe (11).
9. The MTS gas mixing device for a silicon carbide deposition apparatus according to claim 1, wherein: The heating device (6) uses a heating belt.
10. The MTS gas mixing device for a silicon carbide deposition apparatus according to claim 1, characterized by: The connector (13) is a flange.
Citation Information
Patent Citations
Silicon carbide chemical vapor deposition method and reactor
CN115537769A