Infrared focal plane detectors and systems
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-02
- Publication Date
- 2026-08-14
AI Technical Summary
但是，分光或分波段通常需要设计复杂的光学系统，也带来了探测器尺寸和重量的增加，增加了探测系统的整体成本
[0027]本公开提供的技术方案与现有技术相比具有如下优点：
Smart Images
Figure CN224638394U_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of infrared detection technology, and in particular to an infrared focal plane detector and system. Background Technology
[0002] Infrared focal plane array detectors have crucial applications in numerous fields such as thermal imaging, spectral analysis, security monitoring, and medical testing. With continuous technological advancements, higher demands are being placed on the performance and application scenarios of infrared detectors, and traditional infrared focal plane array detectors are gradually revealing their limitations in many aspects.
[0003] Traditional infrared focal plane array detectors primarily rely on rigid materials (such as silicon and mercury cadmium telluride) to achieve multicolor infrared detection. While widely used in thermal imaging and spectral analysis, these detectors have significant drawbacks. Specifically, to improve detector performance, cooling devices (such as Stirling coolers) are required, resulting in a bulky and power-intensive system that limits its application in scenarios with strict size and power consumption requirements. Furthermore, the properties of rigid materials prevent their use in flexible environments, hindering their ability to meet the demands of emerging fields such as wearable devices and curved surface imaging.
[0004] To address the aforementioned issues, the emergence of flexible electronics technology has brought hope for solving the problem of flexible applications of traditional infrared detectors. However, in the field of infrared detection, the flexibility of infrared detection materials remains a significant challenge. Traditional infrared materials are difficult to apply directly to flexible substrates, and the performance of flexible materials is generally inferior to that of rigid materials. This affects the sensitivity and response speed of the detector, leading to a decline in the overall performance of the detector.
[0005] Meanwhile, multicolor infrared detection technology generally refers to the technology that can simultaneously detect multiple infrared bands (such as short-wave, mid-wave, and long-wave infrared) through spectral or band-segmentation design, which makes more accurate target identification and analysis possible. However, spectral or band-segmentation usually requires the design of complex optical systems, which also leads to an increase in detector size and weight, increasing the overall cost of the detection system. Utility Model Content
[0006] To address the aforementioned technical problems, this disclosure provides an infrared focal plane detector and system.
[0007] This disclosure provides an infrared focal plane detector, comprising:
[0008] Flexible substrate, including readout circuitry;
[0009] Multiple first electrodes are spaced apart on one side of the flexible substrate, and the first electrodes are connected to the readout circuit;
[0010] The quantum dot infrared absorption layer includes at least two different absorption blocks, each with a different response band. The absorption blocks are located on the side of the first electrode away from the flexible substrate and are disposed corresponding to the first electrode.
[0011] The second electrode is located on the side of the quantum dot infrared absorption layer opposite to the first electrode.
[0012] Optionally, the absorber block includes an intrinsic colloidal quantum dot layer.
[0013] Optionally, the quantum dot infrared absorption layer further includes:
[0014] A common N-type layer is located between the absorber block and the flexible substrate;
[0015] A common P-type layer is located between the absorber block and the second electrode.
[0016] Optionally, the common N-type layer includes at least one of bismuth selenide layer, bismuth sulfide layer, bismuth telluride layer, zinc oxide layer, and N-type doped intrinsic colloidal quantum dot layer;
[0017] The shared P-type layer includes at least one of the following: a poly(3-hexylthiophene) layer, a poly(3,4-ethylenedioxythiophene)polystyrene sulfonate layer, a 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene layer, a polytriarylamine layer, and a P-type doped intrinsic colloidal quantum dot layer.
[0018] Optionally, the quantum dot infrared absorption layer includes a colloidal quantum dot layer;
[0019] The colloidal quantum dot layer includes at least one of the following: a mercury selenide layer, a mercury cadmium telluride layer, a silver sulfide layer, a lead sulfide layer, a lead selenide layer, a mercury telluride layer, a cadmium selenide layer, a silver telluride layer, and a silver selenide layer.
[0020] Optionally, the absorbing blocks with different response bands are alternately arranged in a preset surface, and the preset surface matches the surface of the flexible substrate.
[0021] Optionally, the response band includes at least two bands selected from the short-wave infrared band, the mid-wave infrared band, and the long-wave infrared band.
[0022] Optionally, the first electrode includes at least one conductive metal electrode or a conductive non-metal electrode;
[0023] The second electrode includes at least one conductive metal electrode or a conductive non-metal electrode.
[0024] This disclosure also provides an infrared focal plane detector system, including any of the infrared focal plane detectors described above.
[0025] Optionally, the infrared focal plane array detection system also includes an imaging lens;
[0026] The imaging lens is located on the light-incident surface of the infrared focal plane detector, and the imaging focal plane of the imaging lens matches the detection surface of the infrared focal plane detector.
[0027] The technical solution provided in this disclosure has the following advantages compared with the prior art:
[0028] The infrared focal plane detector and system disclosed herein include: a flexible substrate, multiple first electrodes, a quantum dot infrared absorption layer, and a second electrode; wherein, the flexible substrate includes a readout circuit; the multiple first electrodes are spaced apart on one side of the flexible substrate and are connected to the readout circuit; the quantum dot infrared absorption layer includes at least two different absorbers, each with a different response band, and the absorbers are located on the side of the first electrodes facing away from the flexible substrate and are correspondingly arranged to the first electrodes; the second electrode is located on the side of the quantum dot infrared absorption layer facing away from the first electrodes. This provides a flexible multi-color coplanar coupling infrared detection solution, enabling simultaneous detection of multiple infrared bands. Based on the bendability of the flexible substrate and the good coupling between the quantum dot infrared absorption layer and the flexible substrate using a liquid film formation method, high-resolution imaging can be achieved using only a single lens, reducing the number of optical components, decreasing the size and weight of the detector, and lowering the overall cost. Attached Figure Description
[0029] The accompanying drawings, which are incorporated in and form a part of this specification, illustrate embodiments consistent with this disclosure and, together with the description, serve to explain the principles of this disclosure.
[0030] To more clearly illustrate the technical solutions in the embodiments of this disclosure or the prior art, the accompanying drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0031] Figure 1 This is a schematic diagram of the structure of an infrared focal plane detector provided in an embodiment of the present disclosure;
[0032] Figure 2 This is a schematic diagram of another infrared focal plane detector provided in an embodiment of the present disclosure;
[0033] Figure 3 This is a schematic diagram of the structure of an infrared focal plane detector system provided in an embodiment of the present disclosure;
[0034] Figure 4A schematic flowchart illustrating a method for fabricating an infrared focal plane detector according to an embodiment of this disclosure;
[0035] Figure 5 A schematic flowchart illustrating another method for fabricating an infrared focal plane detector provided in this embodiment of the present disclosure;
[0036] Figure 6 This is a schematic flowchart illustrating another method for fabricating an infrared focal plane detector provided in this embodiment of the present disclosure. Detailed Implementation
[0037] To better understand the above-mentioned objectives, features, and advantages of this disclosure, the solutions disclosed herein will be further described below. It should be noted that, unless otherwise specified, the embodiments and features described herein can be combined with each other.
[0038] Numerous specific details are set forth in the following description in order to provide a full understanding of this disclosure, but this disclosure may also be implemented in other ways different from those described herein; obviously, the embodiments in the specification are only some, and not all, of the embodiments of this disclosure.
[0039] The infrared focal plane detector and system provided in this disclosure, based on the bendable and stretchable characteristics of the flexible substrate, allows the curvature of the flexible substrate to be matched with the curvature of the imaging lens. Furthermore, the flexible array substrate can be effectively combined with infrared colloidal quantum dot materials of different response bands through quantum dot lithography technology, realizing the fabrication of a flexible multicolor infrared focal plane detector. This not only enables it to achieve high-resolution imaging using only a single lens, but also enables the simultaneous detection of information in multiple infrared bands. This significantly reduces the number of optical components in the infrared focal plane detector, reducing the size and weight of the detector, thereby greatly reducing the manufacturing cost of the infrared detector and the overall cost of the system.
[0040] The embodiments disclosed herein employ flexible electronics technology, which uses flexible substrates, such as polymers and graphene, to enable the corresponding electronic devices, namely infrared focal plane detectors, to have bendable and stretchable characteristics.
[0041] This disclosure employs novel materials, such as quantum dots, to form a corresponding quantum dot infrared absorption layer, which demonstrates great potential in the field of infrared detection. Simultaneously, flexible manufacturing processes, such as printed electronics and transfer printing, enable the fabrication of flexible detectors, offering broad application prospects for flexible multicolor infrared focal plane detectors in wearable devices, curved surface imaging, and smart skins.
[0042] In the technical solutions provided by the embodiments of this disclosure, novel materials (such as quantum dot materials) can be coupled to flexible substrates in their liquid phase by spraying or spin coating, avoiding the complexity of traditional thin film coupling processes and reducing manufacturing costs. This solves problems such as compatibility between optoelectronic materials and flexible substrates, which is beneficial to improving the stability of device structure and performance, mitigating the impact of the precision and consistency of the fabrication process on detector performance, and improving the performance consistency of the detector.
[0043] In summary, the flexible multicolor horizontal structure infrared focal plane detector and detection system provided in this disclosure have significant practical implications and market value. They can not only solve the problems of traditional infrared detectors in flexible applications and multicolor detection, but also meet the high-performance requirements in complex environments, which is conducive to promoting the widespread application of infrared detection technology in more fields.
[0044] The infrared focal plane detector and system provided in the embodiments of this disclosure are described below with reference to the accompanying drawings.
[0045] For example, Figure 1 This is a schematic diagram of the structure of an infrared focal plane detector provided in an embodiment of the present disclosure. Figure 2 This is a schematic diagram of another infrared focal plane detector provided in an embodiment of this disclosure. (Refer to...) Figure 1 or Figure 2 The infrared focal plane detector 10 may include: a flexible substrate 11, a plurality of first electrodes 12, a quantum dot infrared absorption layer 13, and a second electrode 14; wherein, the flexible substrate 11 includes a readout circuit 110; the plurality of first electrodes 12 are spaced apart on one side of the flexible substrate 11 and are connected to the readout circuit 110; the quantum dot infrared absorption layer 13 includes at least two different absorption blocks 130, the different absorption blocks 130 have different response bands, the absorption blocks 130 are located on the side of the first electrodes 12 away from the flexible substrate 11 and are correspondingly arranged with the first electrodes 12; the second electrode 14 is located on the side of the quantum dot infrared absorption layer 13 away from the first electrodes 12.
[0046] The flexible substrate 11 is a substrate with stretchable and bendable properties, and may include polymers, graphene, and other flexible substrates known to those skilled in the art, which are not limited herein. The flexible substrate 11 includes a readout circuit 110, which can read out the photoelectric signal generated by infrared detection for processing by subsequent circuits to obtain the infrared detection result.
[0047] The quantum dot infrared absorption layer 13, also known as the infrared colloidal quantum dot layer, contains absorption blocks 130 that can correspond to different response bands, converting infrared signals into electrical signals to generate photoelectric signals. The first electrode 12 is located on one side of the flexible substrate 11 and can be a block structure, corresponding to the absorption blocks 130 in the quantum dot infrared absorption layer 13, to transmit the photoelectric signals generated by the corresponding absorption blocks 130 to the readout circuit 110. The second electrode 14 can be a full-surface electrode structure, used to combine the absorption blocks 130 and the first electrode 12 to form a complete current loop.
[0048] This disclosure provides a flexible multi-color coplanar coupling infrared detection solution, which enables the simultaneous detection of multiple infrared bands. Based on the bendability of the flexible substrate and the good coupling between the quantum dot infrared absorption layer and the flexible substrate through liquid film formation, high-resolution imaging can be achieved using only a single lens, reducing the number of optical components, the size and weight of the detector, and the overall cost.
[0049] In some embodiments, the infrared focal plane detector 10 may be of the photoconductive type, such as... Figure 1 As shown; wherein, the quantum dot infrared absorption layer 13 can be an array structure in which absorption blocks 130 formed of quantum dot materials of different wavelengths alternate, which has a simple structure and low cost. In some other embodiments, the infrared focal plane detector 10 can also be photovoltaic type, such as... Figure 2 As shown.
[0050] For example, refer to Figure 2 In the infrared focal plane detector 10, the absorption block 130 may include an intrinsic colloidal quantum dot layer; the quantum dot infrared absorption layer 13 also includes a common N-type layer 131 and a common P-type layer 132: wherein the common N-type layer 131 is located between the absorption block 130 and the flexible substrate 11; and the common P-type layer 132 is located between the absorption block 130 and the second electrode 14.
[0051] The quantum dot infrared absorption layer 13 comprises an array structure of alternating absorber blocks formed from quantum dot materials of different wavelengths. This absorber, combined with a shared N-type layer 131 and a shared P-type layer 132, forms a PN junction structure, giving it a built-in electric field. This built-in electric field effectively reduces the detector's dark current, thereby improving its sensitivity, resolution, and signal-to-noise ratio, and enhancing its overall performance.
[0052] In some embodiments, continue to refer to Figure 1 or Figure 2 Absorbing blocks 130 with different response bands are alternately arranged in a preset surface, and the preset surface matches the surface of the flexible substrate 11.
[0053] Taking the surface of the flexible substrate 11 as an example, absorber blocks 130 with different response bands within the quantum dot infrared absorption layer 13 are alternately arranged in a plane parallel to this plane, corresponding to a multicolor horizontal structure infrared focal plane detector. When the flexible substrate 11 is bent, and the surface of the flexible substrate becomes a corresponding curved surface, absorber blocks 130 with different response bands within the quantum dot infrared absorption layer 13 are alternately arranged in a curved surface parallel to this curved surface, corresponding to a curved structure multicolor horizontal structure infrared focal plane detector.
[0054] It is understandable that the "horizontal structure" in this horizontal structure infrared focal plane detector is relative to the "vertical structure". The "vertical structure" can be understood as different absorption blocks 130 arranged in a direction perpendicular to the plane of the flexible substrate 11.
[0055] In some embodiments, the response band includes at least two bands selected from the short-wave infrared band, the mid-wave infrared band, and the long-wave infrared band.
[0056] For example, the response band of the quantum dot infrared absorption layer 13 in the infrared focal plane detector 10 may include a short-wave infrared band and a mid-wave infrared band, or a short-wave infrared band and a long-wave infrared band, or a mid-wave infrared band and a long-wave infrared band, thereby achieving dual-band infrared detection. Alternatively, the response band of the quantum dot infrared absorption layer 13 in the infrared focal plane detector 10 may include a short-wave infrared band, a mid-wave infrared band, and a long-wave infrared band, thereby achieving three-band infrared detection.
[0057] In other embodiments, the response band of the quantum dot infrared absorption layer 13 in the infrared focal plane detector 10 can also be set to different wavelength ranges of different bands in the short-wave infrared band, mid-wave infrared band, and long-wave infrared band, which is not limited here.
[0058] In some embodiments, the quantum dot infrared absorption layer 13 includes a colloidal quantum dot layer. This colloidal quantum dot layer can be a film layer coupled to one side of the flexible substrate 11 via liquid-phase film formation. Further, to achieve the alternating arrangement of absorbers 130 with different response bands, patterning can be performed using quantum dot photolithography. Specifically, quantum dot photolithography involves doping quantum dots with a photosensitive reagent, which is cured after irradiation with an ultraviolet lamp. Areas not irradiated by the ultraviolet lamp can be dissolved using a solvent. Thus, quantum dots doped with a photosensitive reagent are coupled to the flexible substrate through spin coating, spraying, or other methods. The desired pattern is then cured using a mask and ultraviolet lamp irradiation. Excess quantum dot material is dissolved using a solvent, thus fabricating the absorbers. This avoids the complexity of traditional thin-film coupling processes and reduces manufacturing costs, thereby solving problems such as compatibility between optoelectronic materials and flexible substrates. It is beneficial for improving the structural and performance stability of the device, mitigating the impact of the precision and consistency of the fabrication process on detector performance, and improving the performance consistency of the detector.
[0059] For example, the colloidal quantum dot layer may include at least one of the following: a mercury selenide (HgSe) layer, a mercury cadmium telluride (HgCdTe) layer, a silver sulfide (Ag2S) layer, a lead sulfide (PbS) layer, a lead selenide (PbSe) layer, a mercury telluride (HgTe) layer, a cadmium selenide (CdSe) layer, a silver telluride (Ag2Te) layer, and a silver selenide (Ag2Se) layer. In other embodiments, the material of the colloidal quantum dot layer may also include materials known to those skilled in the art that can generate photocurrents in response to infrared wavelengths, and this is not limited thereto.
[0060] In some embodiments, the first electrode 12 includes at least one conductive metal electrode or a conductive non-metal electrode; the second electrode 14 includes at least one conductive metal electrode or a conductive non-metal electrode.
[0061] For example, the first electrode 12 may include one or more of conductive metal electrodes such as gold, silver, copper, aluminum, and chromium, and the second electrode 14 may include one or more of conductive electrodes such as gold and silver, or conductive non-metallic electrodes such as ITO and FTO, which are not limited here.
[0062] The first electrode 12 and the second electrode 14 are used to transmit electrical signals. They can be conductive metal electrodes or conductive non-metal electrodes. They can be formed based on one electrode material or based on a combination of two or more electrode materials, which is not limited here.
[0063] In some embodiments, the material of the shared N-type layer 131 includes at least one of bismuth selenide (Bi2Se3), bismuth sulfide (Bi2S3), bismuth telluride (Bi2Te3), zinc oxide (ZnO), and N-type doped intrinsic colloidal quantum dots; that is, the shared N-type layer 131 includes at least one of a bismuth selenide layer, a bismuth sulfide layer, a bismuth telluride layer, a zinc oxide layer, and an N-type doped intrinsic colloidal quantum dot layer; the material of the shared P-type layer 132 includes poly(3-hexylthiophene) (P3HT) and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT: PSS). The common P-type layer 132 comprises at least one of the following: 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (spiro-OMeTAD), polytriarylamine (PTAA), and P-type doped intrinsic colloidal quantum dots.
[0064] In other embodiments, the materials for the shared N-type layer 131 and the shared P-type layer 132 may also include other materials known to those skilled in the art, and are not limited herein.
[0065] In other embodiments, the infrared focal plane detector 10 may also include other auxiliary functional layers known to those skilled in the art, such as an encapsulation layer, to help ensure the stability of the device structure and performance, which will not be elaborated upon or limited here.
[0066] Based on the above embodiments, this disclosure also provides an infrared focal plane detector system, which may include any of the infrared focal plane detectors provided in the above embodiments, and can achieve the corresponding beneficial effects.
[0067] For example, Figure 3 This is a schematic diagram of an infrared focal plane array detection system provided in an embodiment of this disclosure. (Reference) Figure 3 The infrared focal plane detection system 20 may include an imaging lens 22 and an infrared focal plane detector 10. The infrared focal plane detector may be any of the infrared focal plane detectors 10 provided in the above embodiments. The imaging lens 22 is located on the light-incident surface of the infrared focal plane detector 10, and the imaging focal plane of the imaging lens 22 is matched with the detection surface of the infrared focal plane detector 10.
[0068] For example, the imaging lens 22 may include a convex lens, and the incident surface of the infrared focal plane detector 10 is matched with the imaging focal plane of the convex lens to avoid the problem of edge defocus.
[0069] The infrared focal plane array detection system 20 provided in this embodiment is a single-lens imaging system. It uses a single lens to focus infrared light onto the incident surface of a flexible infrared focal plane array detector. The detector detects the presence and movement of objects by capturing changes in thermal radiation (infrared light). However, when the detector uses a rigid material (see reference...), Figure 3 When the detector edge is far from the focal plane of the lens (as shown by the gray lines in the image), the image at the detector edge becomes blurred, which is detrimental to large-field-of-view imaging. Therefore, using a flexible array substrate as the detector substrate allows the detector to bend as a whole, matching the incident light surface of the detector with the imaging focal plane of the lens, thereby forming a clear image at the rear focal point of the lens.
[0070] In other embodiments, the infrared focal plane detection system 20 may also include other auxiliary structural components known to those skilled in the art, such as encapsulation and fixing structures, to help ensure the stability of the device structure and performance. These are not described in detail here and are not limited thereto.
[0071] Based on the same inventive concept, this disclosure also provides a method for preparing an infrared focal plane detector. This method can be used to form any of the infrared focal plane detectors provided in the above embodiments, and has corresponding beneficial effects.
[0072] For example, Figure 4 This is a schematic flowchart illustrating a method for fabricating an infrared focal plane detector according to an embodiment of the present disclosure, showing the fabrication steps of an infrared focal plane detector.
[0073] refer to Figure 4 The method for fabricating this infrared focal plane detector includes the following steps.
[0074] S31. Provide a flexible substrate, the flexible substrate including readout circuitry.
[0075] For example, the flexible substrate may include polydimethylsiloxane or polyimide, and the flexible substrate includes readout circuitry to read out photoelectric signals.
[0076] S32. A plurality of first electrodes are formed on one side of the flexible substrate, the plurality of first electrodes are spaced apart on one side of the flexible substrate, and the first electrodes are connected to the readout circuit.
[0077] The first electrode is coupled to the readout circuit of the flexible substrate, thereby forming a flexible focal plane array substrate. Subsequent steps (see below) Figure 5 and Figure 6 This will be carried out on this basis.
[0078] S33. A quantum dot infrared absorption layer is formed on the side of the first electrode away from the flexible substrate; the quantum dot infrared absorption layer includes at least two different absorption blocks, the different absorption blocks have different response bands, and are arranged corresponding to the first electrode.
[0079] Among them, the quantum dot infrared absorption layer is a photoelectric response layer that can respond to at least two different bands of infrared light and generate corresponding photoelectric signals, thereby realizing multi-band infrared detection.
[0080] S34. A second electrode is formed on the side of the quantum dot infrared absorption layer opposite to the first electrode.
[0081] This completes the infrared focal plane detector.
[0082] In some embodiments, the infrared focal plane detector may be of the photoconductive type. Figure 5 This is a schematic flowchart illustrating another method for fabricating an infrared focal plane detector according to an embodiment of this disclosure, showing the fabrication steps of a light-guided detector. (Reference) Figure 5 Taking the quantum dot infrared absorption layer, which includes short-wavelength colloidal quantum dot absorbers and mid-wavelength quantum dot absorbers, as an example, the fabrication steps of this infrared focal plane detector may include:
[0083] (a) A first infrared absorption layer is formed by liquid phase film formation based on a flexible substrate coupled with a bottom electrode (i.e., the first electrode) using short-wave colloidal quantum dots;
[0084] (b) Based on quantum dot lithography, the first infrared absorption layer is patterned, and some absorption blocks corresponding to short-wavelength colloidal quantum dots are retained on the bottom electrode;
[0085] (c) Based on mid-wave colloidal quantum dots, a second infrared absorption layer is formed by liquid phase film formation and patterned using quantum dot photolithography to retain the absorption blocks corresponding to the mid-wave colloidal quantum dots.
[0086] (d) A second electrode (i.e., the top electrode) is formed on the side of the quantum dot infrared absorption layer away from the flexible substrate.
[0087] Thus, a light-guided infrared focal plane detector was formed.
[0088] In some embodiments, the infrared focal plane detector may be photovoltaic type. Figure 6 This is a schematic flowchart illustrating another method for fabricating an infrared focal plane detector according to an embodiment of this disclosure, showing the fabrication steps of a photovoltaic detector. (Reference) Figure 6 Taking the quantum dot infrared absorption layer, which includes short-wavelength colloidal quantum dot absorbers and mid-wavelength quantum dot absorbers, as an example, the fabrication steps of this infrared focal plane detector may include:
[0089] (a) An N-type layer (i.e., a shared N-type layer) is formed on a flexible substrate based on a coupled bottom electrode (i.e., the first electrode);
[0090] (b) An absorber block corresponding to a short-wavelength colloidal quantum dot is formed on the side of the N-type layer away from the flexible substrate;
[0091] (c) Similarly, an absorption block corresponding to the medium-wave colloidal quantum dot is formed;
[0092] (d) A P-type layer is formed on the side of the quantum dot infrared absorption layer away from the flexible substrate, and then a top electrode is formed.
[0093] This completes the formation of a photovoltaic infrared focal plane detector.
[0094] The above Figure 5 and Figure 6 In the illustrated preparation process, by controlling the synthesis time and temperature of colloidal quantum dots, colloidal quantum dots responsive to different infrared bands can be formed, thereby enabling detection of different infrared bands. Colloidal quantum dots are fabricated on top of the first electrode or the N-type layer using liquid-phase processing. Figure 5 and Figure 6 (Taking the shown orientation as an example). The fabrication method of the infrared absorbing material arrays of different wavelength bands is as follows: First, a short-wave colloidal quantum dot layer is fabricated. Since its film layer is continuous, the quantum dots need to be etched into an array shape corresponding to the substrate array using quantum dot photolithography. Similarly, a medium-wave colloidal quantum dot layer is fabricated so that the short-wave and medium-wave colloidal quantum dot arrays alternately exist on the same horizontal plane.
[0095] In some embodiments, taking a dual-band infrared detector as an example, refer to Figure 5 or Figure 6 This forms a quantum dot infrared absorption layer, which may specifically include:
[0096] A first-band colloidal quantum dot absorption layer is formed by spin coating, drop coating, spray coating, blade coating or evaporation, and a first absorption block is formed by patterning through quantum dot photolithography; the first absorption block corresponds to the first electrode in the first part;
[0097] A second-band colloidal quantum dot absorption layer is formed by spin coating, drop coating, spray coating, blade coating or evaporation, and a second absorption block is formed by patterning through quantum dot photolithography; the first absorption block corresponds to the first electrode of the second part;
[0098] The first electrode includes a first part first electrode and a second part first electrode, and the absorption block includes a first absorption block and a second absorption block. The first absorption block and the second absorption block are alternately arranged in a preset surface, and the preset surface matches the surface of the flexible substrate.
[0099] In the method for fabricating an infrared focal plane detector provided in this application embodiment, infrared colloidal quantum dot layers (CQD) of different wavelength bands are effectively combined with a flexible array substrate using quantum dot lithography technology, thereby realizing the fabrication of a flexible multicolor infrared focal plane detector. This not only enables it to achieve high-resolution imaging using only a single lens, but also enables the simultaneous detection of information in multiple infrared bands. This greatly reduces the number of optical components in the infrared focal plane detector, thereby reducing the size and weight of the detector and significantly lowering the manufacturing cost of the infrared detector.
[0100] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.
[0101] The above description is merely a specific embodiment of this disclosure, enabling those skilled in the art to understand or implement it. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not to be limited to the embodiments described herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. An infrared focal plane detector, characterized in that, include: Flexible substrate, including readout circuitry; Multiple first electrodes are spaced apart on one side of the flexible substrate, and the first electrodes are connected to the readout circuit; The quantum dot infrared absorption layer includes at least two different absorption blocks, each with a different response band. The absorption blocks are located on the side of the first electrode away from the flexible substrate and are disposed corresponding to the first electrode. The second electrode is located on the side of the quantum dot infrared absorption layer opposite to the first electrode.
2. The infrared focal plane detector according to claim 1, characterized in that, The absorber block includes an intrinsic colloidal quantum dot layer.
3. The infrared focal plane detector according to claim 2, characterized in that, The quantum dot infrared absorption layer further includes: A common N-type layer is located between the absorber block and the flexible substrate; A common P-type layer is located between the absorber block and the second electrode.
4. The infrared focal plane detector according to claim 3, characterized in that, The common N-type layer includes at least one of bismuth selenide layer, bismuth sulfide layer, bismuth telluride layer, zinc oxide layer, and N-type doped intrinsic colloidal quantum dot layer; The shared P-type layer includes at least one of the following: a poly(3-hexylthiophene) layer, a poly(3,4-ethylenedioxythiophene)polystyrene sulfonate layer, a 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene layer, a polytriarylamine layer, and a P-type doped intrinsic colloidal quantum dot layer.
5. The infrared focal plane detector according to any one of claims 1-4, characterized in that, The quantum dot infrared absorption layer includes a colloidal quantum dot layer; The colloidal quantum dot layer includes at least one of the following: a mercury selenide layer, a mercury cadmium telluride layer, a silver sulfide layer, a lead sulfide layer, a lead selenide layer, a mercury telluride layer, a cadmium selenide layer, a silver telluride layer, and a silver selenide layer.
6. The infrared focal plane detector according to any one of claims 1-5, characterized in that, The absorber blocks with different response bands are alternately arranged in a preset surface, which is matched to the surface of the flexible substrate.
7. The infrared focal plane detector according to any one of claims 1-5, characterized in that, The response bands include at least two bands from the short-wave infrared band, the mid-wave infrared band, and the long-wave infrared band.
8. The infrared focal plane detector according to any one of claims 1-5, characterized in that, The first electrode includes at least one conductive metal electrode or a conductive non-metal electrode; The second electrode includes at least one conductive metal electrode or a conductive non-metal electrode.
9. An infrared focal plane array detection system, characterized in that, Including the infrared focal plane detector as described in any one of claims 1-8.
10. The infrared focal plane array detection system according to claim 9, characterized in that, It also includes imaging lenses; The imaging lens is located on the light-incident surface of the infrared focal plane detector, and the imaging focal plane of the imaging lens matches the detection surface of the infrared focal plane detector.