A heating annealing module and annealing device

Abstract

This utility model discloses a heating annealing module and annealing apparatus. The heating annealing module includes a first heating element and a gas supply assembly. The first heating element generates heat and is spaced apart from the substrate to be annealed. The heat generated by the first heating element acts on the substrate to be annealed through thermal radiation. The gas supply assembly is located on the same side of the substrate to be annealed as the first heating element. The gas supply assembly includes a gas supply section and a gas heating element connected to each other. The gas heating element heats the gas in the gas supply section. The outlet end of the gas supply section faces the substrate to be annealed, and the gas supply section blows out a hot gas flow towards the substrate to be annealed. The flow path of the hot gas flow at least partially overlaps with the thermal radiation path of the first heating element. The heating annealing module and annealing apparatus of this utility model improve the heating uniformity of the heating element on the substrate to be annealed, thereby improving the annealing quality of the substrate after annealing.

Description

Technical Field

[0001] This utility model relates to the field of substrate processing equipment technology, and in particular to a heating annealing module and annealing device. Background Technology

[0002] During substrate processing, various processes such as drying and annealing are performed. Annealing typically involves using an annealing apparatus. This apparatus contains heating elements that heat the substrate to achieve the annealing process. Existing annealing apparatuses generally use a hot plate to heat the substrate, which is in contact with the hot plate. When the hot plate is energized, it generates heat, which is transferred to the substrate in contact with it, thus annealing the substrate.

[0003] When a hot plate heats a substrate, a high degree of flatness is required at the contact surface between the hot plate and the substrate. Poor flatness at this surface will prevent the hot plate and substrate from making adequate contact, thus affecting the uniformity of heating. Furthermore, the substrate may undergo slight thermal deformation when heated, leading to warping and further impacting the uniformity of heating. The uniformity of heating the substrate directly affects the annealing quality; reduced uniformity results in lower annealing quality and, in severe cases, renders the substrate defective. Utility Model Content

[0004] The purpose of this invention is to provide a heating annealing module and annealing device to improve the heating uniformity of the heating element on the substrate to be annealed, thereby improving the annealing quality of the substrate after annealing.

[0005] The objective of this utility model is achieved through the following technical solution:

[0006] A heating annealing module, comprising:

[0007] A first heating element is used to generate heat. The first heating element is disposed at a distance from the substrate to be annealed, and the heat generated by the first heating element acts on the substrate to be annealed in the form of thermal radiation.

[0008] A gas supply assembly is located on the same side of the substrate to be annealed as the first heating element. The gas supply assembly includes a gas supply section and a gas heating element connected to each other. The gas heating element is used to heat the gas in the gas supply section. The outlet end of the gas supply section faces the substrate to be annealed, and the gas supply section is used to blow out a hot gas flow toward the substrate to be annealed. The flow path of the hot gas flow at least partially overlaps with the heat radiation path of the first heating element.

[0009] Preferably, the gas supply assembly includes a hot airflow equalization group, which is disposed at the outlet end of the gas supply section and is used to even out the hot airflow blown out by the gas supply section. After being evenly distributed by the gas supply assembly, the hot airflow is blown toward the substrate to be annealed.

[0010] Preferably, the hot airflow equalization group is located on the side of the first heating element facing the substrate to be annealed, and the hot airflow equalization group is stacked with the first heating element;

[0011] The first heating element has a through hole at its center, and the gas supply unit passes through the through hole and is connected to the hot air flow equalization group.

[0012] Preferably, the hot airflow equalization group includes a plurality of first flow equalization plates, which are arranged sequentially along the hot airflow direction, and each first flow equalization plate is provided with uniformly distributed first flow equalization holes.

[0013] Along the gas flow direction, the diameter of the first flow equalization hole in the first flow equalization plate gradually decreases, and the density of the first flow equalization hole gradually increases.

[0014] Preferably, the hot airflow equalization group further includes a porous ceramic plate, which is located downstream of a plurality of first equalization plates along the flow direction of the hot airflow; the hot airflow passes through the porous ceramic plate and is blown toward the substrate to be annealed.

[0015] Preferably, along the flow direction of the hot air flow, a plurality of first flow equalization plates, the porous ceramic plate, and the substrate to be annealed are respectively formed with projections on the same plane; wherein, the projection of the substrate to be annealed falls completely within the projection of any one of the first flow equalization plates or the porous ceramic plate.

[0016] Preferably, the assembly further includes a gas collection component, which and the gas supply component are disposed on opposite sides of the substrate to be annealed. The gas collection component is used to collect and discharge the airflow flowing through the substrate to be annealed.

[0017] Preferably, the gas collection assembly is provided with an exhaust flow equalization group, which includes a plurality of second flow equalization plates. The plurality of second flow equalization plates are arranged sequentially along the hot gas flow direction, and each second flow equalization plate is provided with uniformly distributed second flow equalization holes.

[0018] Along the gas flow direction, the diameter of the second flow equalization hole in the second flow equalization plate gradually increases, and the density of the second flow equalization hole gradually decreases.

[0019] Preferably, it further includes a second heating element, wherein the first heating element and the second heating element are located on opposite sides of the substrate to be annealed, and the second heating element is located on the side of the exhaust flow equalization group facing away from the substrate to be annealed;

[0020] Along the flow direction of the hot air flow, multiple second flow equalization plates and the substrate to be annealed are respectively formed with projections on the same plane; wherein, the projection of the substrate to be annealed falls completely within the projection of any one of the second flow equalization plates.

[0021] The first heating element and the second heating element are both hot plates.

[0022] An annealing apparatus includes a heating annealing module as described above, wherein a gas supply component of the heating annealing module is connected to an external gas source, and the external gas source is used to provide inert gas.

[0023] Compared with the prior art, the beneficial effects of this utility model include at least the following:

[0024] By spacing the first heating element from the substrate to be annealed, the heating method is non-contact. Therefore, neither the first heating element nor the substrate needs high surface flatness to ensure complete adhesion, reducing the processing precision requirements for both. Furthermore, even if the substrate undergoes slight deformation after heating, since it does not need to contact the first heating element, ensuring uniform heat distribution across the substrate is sufficient to guarantee heating uniformity. During the propagation of heat from the first heating element towards the substrate, the heat is evenly dispersed by the hot airflow from the gas supply unit, meaning that areas with higher heat diffuse towards areas with lower heat, resulting in a more uniform heat distribution. This uniformity of heat distribution improves the uniformity of heat applied to the substrate, thereby enhancing the annealing quality of the substrate. In addition, the heated airflow can also assist in the heating and annealing of the substrate to be annealed, thereby improving the annealing efficiency. Attached Figure Description

[0025] Figure 1 This is a cross-sectional view of the annealing apparatus according to an embodiment of the present invention;

[0026] Figure 2 This is a schematic diagram of the structure of the heating and annealing module according to an embodiment of the present invention;

[0027] Figure 3 This is a cross-sectional view of the heating and annealing module according to an embodiment of the present invention;

[0028] Figure 4 This is an exploded view of the heating and annealing module according to an embodiment of the present invention.

[0029] In the figure: 100, substrate to be annealed; 1, first heating element; 11, through hole; 2, gas supply assembly; 21, gas supply section; 211, hot air flow equalization group; 2111, first flow equalization plate; 2112, first flow equalization hole; 2113, porous ceramic plate; 22, gas heating element; 3, gas collection assembly; 31, exhaust flow equalization group; 311, second flow equalization plate; 3111, second flow equalization hole; 32, exhaust pipe; 4, second heating element; 200, housing. Detailed Implementation

[0030] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided to make the present invention more comprehensive and complete, and to fully convey the concept of the exemplary embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and therefore repeated descriptions of them will be omitted.

[0031] The terms used to describe position and direction in this utility model are illustrated with the accompanying drawings, but changes can be made as needed, and all such changes are included within the scope of protection of this utility model.

[0032] like Figures 2 to 4 As shown, this utility model provides a heating annealing module, which is used to heat the substrate 100 to be annealed, thereby performing an annealing operation on the substrate 100. The substrate 100 to be annealed can be a substrate coated with a thin film, for example, a substrate coated with a perovskite thin film, which undergoes annealing and crystallization in an annealing apparatus. Furthermore, the substrate 100 to be annealed can be a substrate requiring annealing treatment for applications in panel displays, advanced packaging, and other fields. The heating annealing module includes a first heating element 1 and a gas supply component 2, and may also include a gas collection component 3 and a second heating element 4.

[0033] Reference Figure 3 The first heating element 1 is used to generate heat to heat the substrate 100 to be annealed. The first heating element 1 can be disposed at a distance from the substrate 100 to be annealed. When the first heating element 1 generates heat, the heat from the first heating element 1 will radiate to the surroundings. Therefore, the heat generated by the first heating element 1 can act on the substrate 100 to be annealed through thermal radiation to heat the substrate 100 to be annealed. Specifically, the first heating element 1 can be a hot plate.

[0034] The gas supply assembly 2 and the first heating element 1 are located on the same side of the substrate 100 to be annealed. For example, the gas supply assembly 2 and the first heating element 1 can both be located below the substrate 100 to be annealed. The gas supply assembly 2 can be connected to an external gas source, and the external gas source can supply airflow toward the substrate 100 to be annealed through the gas supply assembly 2.

[0035] When both the gas supply assembly 2 and the first heating element 1 are located below the substrate 100 to be annealed, the film to be annealed in the substrate 100 is located above the substrate. At this time, the hot airflow generated by the gas supply assembly 2 blows towards the bottom of the substrate 100 to be annealed, and the hot airflow will not blow directly onto the film to be annealed in the substrate 100, thus avoiding the impact on the film when the hot airflow blows directly onto the film.

[0036] The gas supply assembly 2 includes a gas supply section 21 and a gas heating element 22 connected to each other. One end of the gas supply section 21 can be connected to an external gas source to receive gas supplied by the external gas source, and the other end of the gas supply section 21 serves as the gas outlet. The gas outlet of the gas supply section 21 can extend toward the substrate 100 to be annealed and is used to blow airflow toward the substrate 100 to be annealed. The gas supply section 21 can be a pipe, and a channel for gas flow is formed inside the gas supply section 21.

[0037] The gas heating element 22 is connected to the gas supply unit 21, for example, the gas heating element 22 is disposed inside the gas supply unit 21. The gas heating element 22 can generate heat when energized to heat the gas located inside the gas supply unit 21. The gas supplied by the external gas source passes through the gas heating element 22 to form hot air, which is blown out through the gas supply unit 21 to form a hot airflow towards the substrate 100 to be annealed. The gas heating element 22 can be a conventional electric heating element. The flow path of the hot airflow at least partially overlaps with the heat radiation path of the first heating element 1. Preferably, the flow path of the hot airflow completely overlaps with the radiation path of the first heating element 1 radiating to the substrate 100 to be annealed.

[0038] By positioning the first heating element 1 at a distance from the substrate 100 to be annealed, the heating method between the first heating element 1 and the substrate 100 is non-contact. Therefore, the first heating element 1 and the substrate 100 do not require high surface flatness to ensure complete adhesion, reducing the processing precision requirements for both. Furthermore, even if the substrate 100 undergoes slight deformation after heating, since it does not need to contact the first heating element 1, ensuring uniform heating of the substrate 100 is sufficient; only uniform heat supply to all parts of the substrate 100 is required. During the propagation of heat generated by the first heating element 1 towards the substrate 100, the heat is evenly dispersed by the hot airflow from the gas supply unit 21, meaning that areas with higher heat diffuse towards areas with lower heat, thus achieving a more uniform heat distribution across all locations. The uniformity of the hot airflow improves the heat distribution from the first heating element 1 onto the substrate 100 to be annealed, thereby enhancing the heating uniformity of the substrate 100 and improving the annealing quality. Furthermore, the heated hot airflow can also assist in the annealing process, increasing annealing efficiency.

[0039] By heating the gas in the gas supply section 21, the difference between the hot gas flow from the gas supply section 21 and the ambient temperature of the substrate 100 to be annealed can be reduced. This reduces the impact of the hot gas flow supply on the ambient temperature of the substrate 100, ensuring a consistent ambient temperature around the substrate 100 and improving the temperature uniformity of the substrate 100 during heating. Specifically, by controlling the heating temperature and power of the gas heating element 22, the hot gas flow from the gas supply section can be made to be the same as or approximately the same as the ambient temperature of the substrate 100. The ambient temperature of the substrate 100 during annealing is affected by the heating temperature of the heating element; the ambient temperature of the substrate 100 during annealing is the temperature around the substrate 100 when the heating element heats it.

[0040] In some specific embodiments, one end of the gas supply unit 21 is connected to an inert gas source, which supplies inert gas to the gas supply unit 21 as an external gas source. The inert gas is heated by the gas heating element 22 to form hot gas. By using inert gas to form hot gas, the heating uniformity of the substrate 100 to be annealed is improved, and the gas flow formed by the inert gas can carry away the organic solvents volatilized by the substrate 100 during the annealing process, which is beneficial to the annealing quality of the substrate 100. For example, when the substrate 100 to be annealed is a substrate coated with a perovskite film, the gas flow formed by the inert gas can carry away the organic solvents volatilized by the perovskite film, which is beneficial to the growth of perovskite crystals and improves the annealing quality of the substrate 100.

[0041] Reference Figure 3 and Figure 4 In some specific embodiments, the gas supply assembly 2 further includes a hot airflow equalization group 211. The hot airflow equalization group 211 is disposed at the outlet end of the gas supply unit 21 and is used to equalize the hot airflow blown out by the gas supply unit 21. That is, the hot airflow blown out by the outlet end of the gas supply unit 21 will first blow towards the hot airflow equalization group 211, and after being equalized by the hot airflow equalization group 211, the hot airflow will be blown towards the substrate 100 to be annealed. By using the hot airflow equalization group 211 to equalize the hot airflow, the uniformity of the hot airflow can be improved, which can further improve the uniformity of the heat generated by the hot airflow on the first heating element 1. At the same time, it can also improve the heating uniformity when the hot airflow assists in heating the substrate 100 to be annealed, and further improve the quality of the substrate 100 after annealing.

[0042] The hot airflow equalization assembly 211 may include multiple first equalization plates 2111, and may also include a porous ceramic plate 2113. The multiple first equalization plates 2111 are arranged sequentially along the flow direction of the hot airflow, and each first equalization plate 2111 is provided with uniformly distributed first equalization holes 2112. Specifically, along the flow direction of the hot airflow, the diameter of the equalization holes in the first equalization plates 2111 gradually decreases, while the density of the equalization holes gradually increases. Therefore, as the hot airflow passes through the multiple first equalization plates 2111, the resistance to the hot airflow and the equalization effect of the multiple first equalization plates 2111 gradually increase.

[0043] When hot air flows directly through a flow equalization plate with a small and dense aperture, the resistance of the hot air flowing through the flow equalization plate is large and turbulence is easily generated. This application uses multiple first flow equalization plates 2111 to reduce the risk of hot air generating turbulence or reduce the degree of hot air generating turbulence, and can ensure the flow equalization effect of hot air.

[0044] The porous ceramic plate 2113 can be disposed downstream of the multiple first flow equalization plates 2111 along the gas flow direction. That is, the hot gas flow from the gas supply section is evenly distributed across the multiple first flow equalization plates 2111 before being blown onto the porous ceramic plate 2113. The hot gas flow after passing through the porous ceramic plate 2113 can then be blown onto the substrate 100 to be annealed. The porous ceramic plate 2113 is a ceramic plate with multiple micropores evenly distributed on it. The micropores on the porous ceramic plate 2113 can be at the micrometer level, allowing for high-precision even distribution of the hot gas flow, ensuring uniform flow rate and temperature across the substrate 100 to be annealed, thus ensuring uniform heating across the substrate 100.

[0045] In some specific embodiments, along the flow direction of the hot airflow, the hot airflow equalization group 211 and the substrate 100 to be annealed form projections on the same plane, and the projection of the substrate 100 to be annealed falls completely within the projection of the hot airflow equalization group 211. Specifically, the projection of the substrate 100 to be annealed falls completely within the projection of any one of the first equalization plates 2111 or the porous ceramic plate 2113. Therefore, along the flow direction of the hot airflow, the hot airflow blown towards the substrate 100 to be annealed will be evenly distributed by multiple first equalization plates 2111 and porous ceramic plates 2113, ensuring the uniformity of the hot airflow blown towards all parts of the substrate 100 to be annealed.

[0046] In some specific embodiments, the hot airflow equalization group 211 is located on the side of the first heating element 1 facing the substrate 100 to be annealed, and the hot airflow equalization group 211 is stacked with the first heating element 1. By positioning the hot airflow equalization group 211 on the side of the first heating element 1 facing the substrate 1 to be annealed, for example, by positioning the hot airflow equalization group 211 above the first heating element 1, the hot airflow after being equalized by the hot airflow equalization group 211 can be directly blown toward the substrate 100 to be annealed, preventing the hot airflow from being blocked by the first heating element 1 after being equalized.

[0047] Reference Figure 3 To facilitate the connection of the gas supply unit 21 to the hot air flow equalization group 211 and an external gas source, a through hole 11 may be provided at the center of the first heating element 1. The through hole 11 of the first heating element 1 extends through the first heating element 1 along the flow direction of the hot air flow. One end of the gas supply unit 21 may be located on the side of the first heating element 1 away from the substrate 100 to be annealed and connected to an external gas source. The other end of the gas supply unit 21 may pass through the through hole 11 of the substrate 100 to be annealed and connect to the hot air flow equalization group 211.

[0048] Gas collection component 3 and gas supply component 2 are disposed on opposite sides of the substrate 100 to be annealed. For example, gas collection component 3 is located above the substrate 100 to be annealed, and gas supply component 2 is located below the substrate 100 to be annealed. Gas collection component 3 is used to collect and discharge the airflow flowing through the substrate 100 to be annealed. Specifically, the hot airflow generated by gas supply component 2 is blown toward the lower surface of the substrate 100 to be annealed. The hot airflow flows from the periphery of the substrate 100 to the top of the substrate 100 to be annealed. After flowing through the substrate 100 to be annealed, the hot airflow flows to gas collection component 3 and is discharged to the outside through gas collection component 3.

[0049] Reference Figure 3 and Figure 4 The gas collection assembly 3 may be provided with an exhaust flow equalization group 31. The exhaust flow equalization group 31 may include multiple second flow equalization plates 311, which are arranged sequentially along the flow direction of the hot air flow, and each second flow equalization plate 311 is provided with uniformly distributed second flow equalization holes 3111. Along the flow direction of the hot air flow, the diameter of the second flow equalization holes 3111 of the second flow equalization plates 311 gradually increases, and the density of the second flow equalization holes 3111 gradually decreases. Therefore, when the hot air flow passes through the multiple second flow equalization plates 311, the hot air flow can gradually converge, which facilitates the hot air flow to converge into the exhaust pipe 32 of the gas collection assembly 3, and then the hot air flow is discharged through the exhaust pipe 32 of the gas collection assembly 3. Among them, the diameter of the second flow equalization holes 3111 of the second flow equalization plate 311 near the substrate 100 to be annealed is smaller and more dense, which can ensure the gas uniformity near the substrate 100 to be annealed and improve the quality of the substrate 100 after annealing.

[0050] In some specific embodiments, along the flow direction of the hot airflow, the exhaust flow equalization group 31 and the substrate 100 to be annealed form projections on the same plane, and the projection of the substrate 100 to be annealed falls completely within the projection of the exhaust flow equalization group 31. Specifically, the projection of the substrate 100 to be annealed falls completely within the projection of any one of the second flow equalization plates 311. Therefore, along the flow direction of the hot airflow, the hot airflow from the substrate 100 to the exhaust flow equalization group 31 is evenly distributed by multiple second flow equalization plates 311, ensuring the uniformity of the hot airflow at all points on the substrate 100 to be annealed.

[0051] In some specific embodiments, the heating annealing module may further be provided with a second heating element 4, which can cooperate with the first heating element 1 to jointly heat the substrate 100 to be annealed. The second heating element 4 and the first heating element 1 can be located on opposite sides of the substrate 100 to be annealed, and are spaced apart from the substrate 100. The second heating element 4 can have the same structure as the first heating element 1; for example, both the second heating element 4 and the first heating element 1 are hot plates.

[0052] The second heating element 4 can be disposed on the side of the exhaust flow equalization assembly 31 facing away from the substrate 100 to be annealed, and a through hole 11 can be provided at the center of the second heating element 4. The gas collection assembly 3 includes an exhaust pipe 32 extending to the outside. One end of the exhaust pipe 32 passes through the through hole 11 of the second heating element 4 to connect with the exhaust flow equalization assembly 31, and the other end of the exhaust pipe 32 extends to the outside. The gas flowing through the exhaust flow equalization assembly 31 flows into the exhaust pipe 32 for discharge.

[0053] Reference Figure 1 This invention also provides an annealing apparatus, including a housing 200 and the aforementioned heating annealing module. A receiving space is formed within the housing 200, which can be used to accommodate the substrate 100 to be annealed. The heating annealing module can be installed in the housing 200, and the first heating element 1, the second heating element 4, the hot air flow equalization group 211, and the exhaust flow equalization group 31 of the heating annealing module are respectively located within the receiving space of the housing 200. The gas supply section 21 of the heating annealing module can pass through the housing 200 to connect with an external gas source, so that gas supplied by the external gas source can flow into the housing 200 from the gas supply section 21; the exhaust pipe 32 of the gas collection assembly 3 can pass through the housing 200 to extend to the outside, and the gas in the receiving space can be discharged to the outside from the exhaust pipe 32.

[0054] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and alterations to the above embodiments within the scope of the present invention without departing from the principles and spirit of the present invention, and all such changes should fall within the protection scope of the claims of the present invention.

Claims

1. A heating annealing module, characterized in that, include: A first heating element (1) is used to generate heat. The first heating element (1) is spaced apart from the substrate (100) to be annealed, and the heat generated by the first heating element (1) acts on the substrate (100) to be annealed in the form of thermal radiation. A gas supply assembly (2) is located on the same side of the substrate (100) to be annealed as the first heating element (1). The gas supply assembly (2) includes a gas supply section (21) and a gas heating element (22) connected to each other. The gas heating element (22) is used to heat the gas in the gas supply section (21). The gas outlet of the gas supply section (21) faces the substrate (100) to be annealed, and the gas supply section (21) is used to blow out a hot gas flow toward the substrate (100) to be annealed. The flow path of the hot gas flow at least partially overlaps with the heat radiation path of the first heating element (1).

2. The heating and annealing module according to claim 1, characterized in that, The gas supply assembly (2) includes a hot air flow equalization group (211), which is disposed at the outlet end of the gas supply section (21) and is used to even out the hot air flow blown out by the gas supply section (21). The hot air flow is blown toward the substrate (100) to be annealed after being evenly distributed by the gas supply assembly (2).

3. The heating and annealing module according to claim 2, characterized in that, The hot airflow equalization group (211) is located on the side of the first heating element (1) facing the substrate (100) to be annealed, and the hot airflow equalization group (211) is stacked with the first heating element (1); The first heating element (1) has a through hole (11) at its center, and the gas supply unit (21) passes through the through hole (11) and is connected to the hot air flow equalization group (211).

4. The heating and annealing module according to claim 2, characterized in that, The hot airflow equalization group (211) includes a plurality of first equalization plates (2111), which are arranged sequentially along the hot airflow direction. Each first equalization plate (2111) is provided with uniformly distributed first equalization holes (2112). Along the gas flow direction, the diameter of the first flow equalization hole (2112) of the first flow equalization plate (2111) gradually decreases, and the density of the first flow equalization hole (2112) gradually increases.

5. The heating and annealing module according to claim 4, characterized in that, The hot airflow equalization group (211) also includes a porous ceramic plate (2113). Along the flow direction of the hot airflow, the porous ceramic plate (2113) is located downstream of a plurality of first equalization plates (2111). After passing through the porous ceramic plate (2113), the hot airflow is blown toward the substrate (100) to be annealed.

6. The heat anneal module of claim 5, wherein, Along the flow direction of the hot airflow, multiple first flow equalization plates (2111), porous ceramic plates (2113), and the substrate to be annealed (100) are respectively formed with projections on the same plane; wherein, the projection of the substrate to be annealed (100) completely falls within the projection of any one of the first flow equalization plates (2111) or the porous ceramic plate (2113).

7. The heat anneal module of claim 1, wherein, It also includes a gas collection component (3), which and the gas supply component (2) are disposed on opposite sides of the substrate to be annealed (100). The gas collection component (3) is used to collect and discharge the airflow flowing through the substrate to be annealed (100).

8. The heat anneal module of claim 7, wherein, The gas collection assembly (3) is provided with an exhaust flow equalization group (31), which includes a plurality of second flow equalization plates (311). The plurality of second flow equalization plates (311) are arranged sequentially along the hot air flow direction, and each second flow equalization plate (311) is provided with uniformly distributed second flow equalization holes (3111). Along the gas flow direction, the diameter of the second flow equalization hole (3111) of the second flow equalization plate (311) gradually increases, and the density of the second flow equalization hole (3111) gradually decreases.

9. The heat anneal module of claim 8, wherein, It also includes a second heating element (4), the first heating element (1) and the second heating element (4) are located on opposite sides of the substrate to be annealed (100), and the second heating element (4) is located on the side of the exhaust flow equalization group (31) facing away from the substrate to be annealed (100); Along the flow direction of the hot air flow, multiple second flow equalization plates (311) and the substrate to be annealed (100) are respectively formed with projections on the same plane; wherein the projection of the substrate to be annealed (100) falls completely within the projection of any one of the second flow equalization plates (311). The first heating element (1) and the second heating element (4) are hot plates, respectively.

10. An annealing apparatus characterized by comprising: Includes a heating annealing module as described in any one of claims 1 to 9, wherein the gas supply component (2) of the heating annealing module is connected to an external gas source, the external gas source being used to provide inert gas.

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